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BR24H16F-5ACE2 Rohm Semiconductor br24h16xxx-5ac-e.pdf Description: 16KBIT, IC BUS, HIGH SPEED WRITE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I²C
Memory Organization: 2K x 8
auf Bestellung 2500 Stücke:
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15+1.4 EUR
17+1.29 EUR
25+1.27 EUR
50+1.26 EUR
100+1.13 EUR
250+1.12 EUR
500+1.11 EUR
1000+1.06 EUR
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BR24H16ANUX-5ACTR BR24H16ANUX-5ACTR Rohm Semiconductor datasheet?p=BR24H16ANUX-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: VSON08AX2030
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I²C
DigiKey Programmable: Not Verified
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BR24H16ANUX-5ACTR BR24H16ANUX-5ACTR Rohm Semiconductor datasheet?p=BR24H16ANUX-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 16KBIT I2C 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: VSON08AX2030
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I²C
DigiKey Programmable: Not Verified
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19+1.14 EUR
25+1.11 EUR
50+1.08 EUR
100+1.06 EUR
250+1.04 EUR
500+1.01 EUR
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2SCR582D3TL1 2SCR582D3TL1 Rohm Semiconductor datasheet?p=2SCR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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2SCR582D3TL1 2SCR582D3TL1 Rohm Semiconductor datasheet?p=2SCR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN 30V 10A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
auf Bestellung 1893 Stücke:
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10+2.56 EUR
100+1.73 EUR
500+1.38 EUR
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2SAR582D3TL1 2SAR582D3TL1 Rohm Semiconductor datasheet?p=2SAR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 230MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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2SAR582D3TL1 2SAR582D3TL1 Rohm Semiconductor datasheet?p=2SAR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 230MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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10+2.49 EUR
100+1.94 EUR
500+1.64 EUR
1000+1.33 EUR
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SLR-56MCT32 SLR-56MCT32 Rohm Semiconductor slr-56-e.pdf Description: LED GREEN CLEAR T-1 3/4 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 8.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5.00mm Dia
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SLR-56MCT32 SLR-56MCT32 Rohm Semiconductor slr-56-e.pdf Description: LED GREEN CLEAR T-1 3/4 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 8.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5.00mm Dia
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UT6MC5TCR UT6MC5TCR Rohm Semiconductor ut6mc5tcr-e.pdf Description: MOSFET 60V 3.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
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UT6MC5TCR UT6MC5TCR Rohm Semiconductor ut6mc5tcr-e.pdf Description: MOSFET 60V 3.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
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UT6JE5TCR UT6JE5TCR Rohm Semiconductor ut6je5tcr-e.pdf Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6JE5TCR UT6JE5TCR Rohm Semiconductor ut6je5tcr-e.pdf Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 P-Channel (Dual)
Produkt ist nicht verfügbar
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UT6ME5TCR UT6ME5TCR Rohm Semiconductor ut6me5tcr-e.pdf Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 2W (Ta)
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UT6ME5TCR UT6ME5TCR Rohm Semiconductor ut6me5tcr-e.pdf Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
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UT6MB5TCR UT6MB5TCR Rohm Semiconductor ut6mb5tcr-e.pdf Description: MOSFET 40V 5A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6MB5TCR UT6MB5TCR Rohm Semiconductor ut6mb5tcr-e.pdf Description: MOSFET 40V 5A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
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500+0.75 EUR
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UT6KE5TCR UT6KE5TCR Rohm Semiconductor ut6ke5tcr-e.pdf Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6KE5TCR UT6KE5TCR Rohm Semiconductor ut6ke5tcr-e.pdf Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 N-Channel (Dual)
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LTR100JZPF1R80 LTR100JZPF1R80 Rohm Semiconductor ltr-e.pdf Description: RES SMD 1.8 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
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LTR100JZPF1R80 LTR100JZPF1R80 Rohm Semiconductor ltr-e.pdf Description: RES SMD 1.8 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
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LTR100JZPJ1R8 LTR100JZPJ1R8 Rohm Semiconductor ltr-e.pdf Description: RES SMD 1.8 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
Produkt ist nicht verfügbar
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LTR100JZPJ1R8 LTR100JZPJ1R8 Rohm Semiconductor ltr-e.pdf Description: RES SMD 1.8 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
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100+0.54 EUR
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SFR03EZPF1273 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 127 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
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SFR03EZPF1273 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 127 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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500+0.051 EUR
1000+0.045 EUR
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BD85506F-E2 BD85506F-E2 Rohm Semiconductor datasheet?p=BD85506F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY / LOW STANDBY PO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 5V ~ 32V
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 5V ~ 32V
Applications: Adapters
Supplier Device Package: 14-SOPK
Current - Supply: 1 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BD85506F-E2 BD85506F-E2 Rohm Semiconductor datasheet?p=BD85506F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY / LOW STANDBY PO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 5V ~ 32V
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 5V ~ 32V
Applications: Adapters
Supplier Device Package: 14-SOPK
Current - Supply: 1 mA
DigiKey Programmable: Not Verified
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PDZVTFTR22B PDZVTFTR22B Rohm Semiconductor datasheet?p=PDZVTF22B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 23.25V 1W PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 17 V
Power - Max: 1 W
Supplier Device Package: PMDTM
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 23.25 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
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RR1LAM6STR RR1LAM6STR Rohm Semiconductor rb058lam-30tftr-e.pdf Description: DIODE GEN PURP 600V 1A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RR1LAM6STR RR1LAM6STR Rohm Semiconductor rb058lam-30tftr-e.pdf Description: DIODE GEN PURP 600V 1A PMDTM
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
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ESR10EZPF1430 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 143 Ohms
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ESR10EZPF1430 Rohm Semiconductor datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 143 Ohms
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ESR10EZPD1430 ESR10EZPD1430 Rohm Semiconductor esr-e.pdf Description: RES 143 OHM 0.5% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 143 Ohms
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ESR10EZPD1430 ESR10EZPD1430 Rohm Semiconductor esr-e.pdf Description: RES 143 OHM 0.5% 1/2W 0805
Resistance: 143 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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RAL045P01TCR RAL045P01TCR Rohm Semiconductor TUMT6_TR_taping.pdf Description: MOSFET P-CH 12V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESR18EZPF3000 ESR18EZPF3000 Rohm Semiconductor esr-e.pdf Description: RES SMD 300 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 300 Ohms
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ESR18EZPF3000 ESR18EZPF3000 Rohm Semiconductor esr-e.pdf Description: RES SMD 300 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 300 Ohms
auf Bestellung 9930 Stücke:
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59+0.36 EUR
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206+0.1 EUR
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SMLV36WBFBW1 SMLV36WBFBW1 Rohm Semiconductor SMLV36_Series.pdf Description: LED SMLV36 WARM WHITE 3000K 1411
Size / Dimension: 0.110" L x 0.122" W (2.80mm x 3.10mm)
Color: White, Warm
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Flux @ 25°C, Current - Test: 20lm (Typ)
CCT (K): 3000K
Height - Seated (Max): 0.028" (0.70mm)
Lumens/Watt @ Current - Test: 65 lm/W
Supplier Device Package: 1411 (3528)
Current - Max: 105mA
Current - Test: 90mA
Voltage - Forward (Vf) (Typ): 3.4V
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SMLVN6RGBW1 Rohm Semiconductor Description: LED RGB DIFFUSED 1411 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMLZN4EGTT86 Rohm Semiconductor Description: LED HB GREEN TRANSP 1411 2PLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR01MZPJ512 ESR01MZPJ512 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Resistance: 5.1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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ESR01MZPJ512 ESR01MZPJ512 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Resistance: 5.1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
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148+0.14 EUR
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1000+0.092 EUR
5000+0.073 EUR
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SMLS14ENTT68 SMLS14ENTT68 Rohm Semiconductor smls14entt68-e.pdf Description: LED GREEN CLEAR 1206 SMD
Color: Green
Package / Case: 1206 (3216 Metric)
Packaging: Tape & Reel (TR)
Lens Size: 1.60mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Clear
Supplier Device Package: 1206
Wavelength - Dominant: 527nm
Height (Max): 2.05mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 3.3V
Configuration: Independent
Millicandela Rating: 3000mcd
Mounting Type: Surface Mount
Size / Dimension: 3.20mm L x 1.60mm W
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SMLS14ENTT68 SMLS14ENTT68 Rohm Semiconductor smls14entt68-e.pdf Description: LED GREEN CLEAR 1206 SMD
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Color: Green
Size / Dimension: 3.20mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 3000mcd
Configuration: Independent
Voltage - Forward (Vf) (Typ): 3.3V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 2.05mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.60mm Dia
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BV1HLC45EFJ-CE2 BV1HLC45EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HLC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BV1HLC45EFJ-CE2 BV1HLC45EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HLC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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DTA124XCAT116 DTA124XCAT116 Rohm Semiconductor datasheet?p=DTA124XCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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SFR01MZPF8203 SFR01MZPF8203 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 820 kOhms
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SFR01MZPF8203 SFR01MZPF8203 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 820 kOhms
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500+0.052 EUR
1000+0.046 EUR
5000+0.036 EUR
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SFR01MZPF8201 SFR01MZPF8201 Rohm Semiconductor sfr-e.pdf Description: RES SMD 8.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 8.2 kOhms
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SFR01MZPF8201 SFR01MZPF8201 Rohm Semiconductor sfr-e.pdf Description: RES SMD 8.2K OHM 1% 1/16W 0402
Resistance: 8.2 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
162+0.13 EUR
243+0.087 EUR
285+0.074 EUR
500+0.052 EUR
1000+0.046 EUR
5000+0.036 EUR
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DTA143TMT2L DTA143TMT2L Rohm Semiconductor datasheet?p=DTA143TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
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500+0.17 EUR
1000+0.14 EUR
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BU9795AGUW-E2 BU9795AGUW-E2 Rohm Semiconductor bu9795afv-e.pdf Description: IC LCD DVR MULTI 31X4COM 48-VBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 124 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 48-VBGA
Current - Supply: 20 µA
Produkt ist nicht verfügbar
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BD6041GUL-E2 BD6041GUL-E2 Rohm Semiconductor datasheet?p=BD6041GUL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC CHARGER PROTECTION FET 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -35°C ~ 85°C (TA)
Supplier Device Package: 9-VCSP50L1 (1.6x1.6)
Fault Protection: Over Current, Over/Under Voltage
Produkt ist nicht verfügbar
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DTB523YETL DTB523YETL Rohm Semiconductor datasheet?p=DTB523YE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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DTB543EE3TL DTB543EE3TL Rohm Semiconductor datasheet?p=DTB543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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DTB543EE3TL DTB543EE3TL Rohm Semiconductor datasheet?p=DTB543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
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DTB543ZE3TL DTB543ZE3TL Rohm Semiconductor datasheet?p=DTB543ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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DTB543ZE3TL DTB543ZE3TL Rohm Semiconductor datasheet?p=DTB543ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
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DTB523YMT2L DTB523YMT2L Rohm Semiconductor datasheet?p=DTB523YM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24H16F-5ACE2 br24h16xxx-5ac-e.pdf
Hersteller: Rohm Semiconductor
Description: 16KBIT, IC BUS, HIGH SPEED WRITE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I²C
Memory Organization: 2K x 8
auf Bestellung 2500 Stücke:
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15+1.4 EUR
17+1.29 EUR
25+1.27 EUR
50+1.26 EUR
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250+1.12 EUR
500+1.11 EUR
1000+1.06 EUR
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BR24H16ANUX-5ACTR datasheet?p=BR24H16ANUX-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H16ANUX-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: VSON08AX2030
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I²C
DigiKey Programmable: Not Verified
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BR24H16ANUX-5ACTR datasheet?p=BR24H16ANUX-5AC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24H16ANUX-5ACTR
Hersteller: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: VSON08AX2030
Write Cycle Time - Word, Page: 3.5ms
Memory Interface: I²C
DigiKey Programmable: Not Verified
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500+1.01 EUR
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2SCR582D3TL1 datasheet?p=2SCR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR582D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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2SCR582D3TL1 datasheet?p=2SCR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SCR582D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS NPN 30V 10A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 250MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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2SAR582D3TL1 datasheet?p=2SAR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR582D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 230MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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2SAR582D3TL1 datasheet?p=2SAR582D3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR582D3TL1
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 3V
Frequency - Transition: 230MHz
Supplier Device Package: TO-252
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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SLR-56MCT32 slr-56-e.pdf
SLR-56MCT32
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR T-1 3/4 T/H
Packaging: Cut Tape (CT)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 8.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5.00mm Dia
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SLR-56MCT32 slr-56-e.pdf
SLR-56MCT32
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR T-1 3/4 T/H
Packaging: Tape & Box (TB)
Package / Case: Radial
Color: Green
Mounting Type: Through Hole
Millicandela Rating: 40mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 2.1V
Lens Color: Green
Current - Test: 10mA
Viewing Angle: 40°
Height (Max): 8.90mm
Wavelength - Dominant: 572nm
Supplier Device Package: T-1 3/4
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 5.00mm Dia
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UT6MC5TCR ut6mc5tcr-e.pdf
UT6MC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 60V 3.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
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UT6MC5TCR ut6mc5tcr-e.pdf
UT6MC5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 60V 3.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, 280mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
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UT6JE5TCR ut6je5tcr-e.pdf
UT6JE5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UT6JE5TCR ut6je5tcr-e.pdf
UT6JE5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 1A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 P-Channel (Dual)
Produkt ist nicht verfügbar
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UT6ME5TCR ut6me5tcr-e.pdf
UT6ME5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Power - Max: 2W (Ta)
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3000+0.39 EUR
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UT6ME5TCR ut6me5tcr-e.pdf
UT6ME5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
auf Bestellung 9169 Stücke:
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UT6MB5TCR ut6mb5tcr-e.pdf
UT6MB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 40V 5A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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UT6MB5TCR ut6mb5tcr-e.pdf
UT6MB5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 40V 5A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V, 122mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
auf Bestellung 2443 Stücke:
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UT6KE5TCR ut6ke5tcr-e.pdf
UT6KE5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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UT6KE5TCR ut6ke5tcr-e.pdf
UT6KE5TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 100V 2A HUML2020L8
Supplier Device Package: HUML2020L8
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Cut Tape (CT)
Configuration: 2 N-Channel (Dual)
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LTR100JZPF1R80 ltr-e.pdf
LTR100JZPF1R80
Hersteller: Rohm Semiconductor
Description: RES SMD 1.8 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
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LTR100JZPF1R80 ltr-e.pdf
LTR100JZPF1R80
Hersteller: Rohm Semiconductor
Description: RES SMD 1.8 OHM 1% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
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LTR100JZPJ1R8 ltr-e.pdf
LTR100JZPJ1R8
Hersteller: Rohm Semiconductor
Description: RES SMD 1.8 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
Produkt ist nicht verfügbar
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LTR100JZPJ1R8 ltr-e.pdf
LTR100JZPJ1R8
Hersteller: Rohm Semiconductor
Description: RES SMD 1.8 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 1.8 Ohms
auf Bestellung 3990 Stücke:
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SFR03EZPF1273 sfr-e.pdf
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 127 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Tape & Reel (TR)
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SFR03EZPF1273 sfr-e.pdf
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Resistance: 127 kOhms
Height - Seated (Max): 0.022" (0.55mm)
Supplier Device Package: 0603
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0603 (1608 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Packaging: Cut Tape (CT)
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84+0.25 EUR
167+0.13 EUR
250+0.083 EUR
294+0.071 EUR
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BD85506F-E2 datasheet?p=BD85506F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD85506F-E2
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY / LOW STANDBY PO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 5V ~ 32V
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 5V ~ 32V
Applications: Adapters
Supplier Device Package: 14-SOPK
Current - Supply: 1 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BD85506F-E2 datasheet?p=BD85506F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD85506F-E2
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY / LOW STANDBY PO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 5V ~ 32V
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 5V ~ 32V
Applications: Adapters
Supplier Device Package: 14-SOPK
Current - Supply: 1 mA
DigiKey Programmable: Not Verified
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5+4.46 EUR
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PDZVTFTR22B datasheet?p=PDZVTF22B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
PDZVTFTR22B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 23.25V 1W PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 17 V
Power - Max: 1 W
Supplier Device Package: PMDTM
Qualification: AEC-Q101
Grade: Automotive
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 23.25 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-128
Tolerance: ±5.68%
Packaging: Cut Tape (CT)
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RR1LAM6STR rb058lam-30tftr-e.pdf
RR1LAM6STR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDTM
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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RR1LAM6STR rb058lam-30tftr-e.pdf
RR1LAM6STR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 1A PMDTM
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDTM
Current - Average Rectified (Io): 1A
auf Bestellung 9070 Stücke:
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26+0.82 EUR
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ESR10EZPF1430 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 143 Ohms
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ESR10EZPF1430 datasheet?p=ESR01MZPF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Power (Watts): 0.4W, 2/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 143 Ohms
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ESR10EZPD1430 esr-e.pdf
ESR10EZPD1430
Hersteller: Rohm Semiconductor
Description: RES 143 OHM 0.5% 1/2W 0805
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 143 Ohms
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ESR10EZPD1430 esr-e.pdf
ESR10EZPD1430
Hersteller: Rohm Semiconductor
Description: RES 143 OHM 0.5% 1/2W 0805
Resistance: 143 Ohms
Height - Seated (Max): 0.026" (0.65mm)
Supplier Device Package: 0805
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0805 (2012 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±0.5%
Power (Watts): 0.5W, 1/2W
Packaging: Cut Tape (CT)
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46+0.46 EUR
87+0.24 EUR
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146+0.14 EUR
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RAL045P01TCR TUMT6_TR_taping.pdf
RAL045P01TCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 4.5A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ESR18EZPF3000 esr-e.pdf
ESR18EZPF3000
Hersteller: Rohm Semiconductor
Description: RES SMD 300 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 300 Ohms
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5000+0.05 EUR
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ESR18EZPF3000 esr-e.pdf
ESR18EZPF3000
Hersteller: Rohm Semiconductor
Description: RES SMD 300 OHM 1% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 300 Ohms
auf Bestellung 9930 Stücke:
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59+0.36 EUR
118+0.18 EUR
176+0.12 EUR
206+0.1 EUR
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1000+0.064 EUR
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SMLV36WBFBW1 SMLV36_Series.pdf
SMLV36WBFBW1
Hersteller: Rohm Semiconductor
Description: LED SMLV36 WARM WHITE 3000K 1411
Size / Dimension: 0.110" L x 0.122" W (2.80mm x 3.10mm)
Color: White, Warm
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Flux @ 25°C, Current - Test: 20lm (Typ)
CCT (K): 3000K
Height - Seated (Max): 0.028" (0.70mm)
Lumens/Watt @ Current - Test: 65 lm/W
Supplier Device Package: 1411 (3528)
Current - Max: 105mA
Current - Test: 90mA
Voltage - Forward (Vf) (Typ): 3.4V
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SMLVN6RGBW1
Hersteller: Rohm Semiconductor
Description: LED RGB DIFFUSED 1411 SMD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMLZN4EGTT86
Hersteller: Rohm Semiconductor
Description: LED HB GREEN TRANSP 1411 2PLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR01MZPJ512 esr-e.pdf
ESR01MZPJ512
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Resistance: 5.1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Tape & Reel (TR)
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ESR01MZPJ512 esr-e.pdf
ESR01MZPJ512
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Resistance: 5.1 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±200ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Automotive AEC-Q200, Pulse Withstanding
Tolerance: ±5%
Power (Watts): 0.2W, 1/5W
Packaging: Cut Tape (CT)
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46+0.46 EUR
88+0.24 EUR
128+0.17 EUR
148+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
5000+0.073 EUR
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SMLS14ENTT68 smls14entt68-e.pdf
SMLS14ENTT68
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 1206 SMD
Color: Green
Package / Case: 1206 (3216 Metric)
Packaging: Tape & Reel (TR)
Lens Size: 1.60mm Dia
Lens Style: Round with Domed Top
Lens Transparency: Clear
Supplier Device Package: 1206
Wavelength - Dominant: 527nm
Height (Max): 2.05mm
Current - Test: 20mA
Lens Color: Colorless
Voltage - Forward (Vf) (Typ): 3.3V
Configuration: Independent
Millicandela Rating: 3000mcd
Mounting Type: Surface Mount
Size / Dimension: 3.20mm L x 1.60mm W
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2000+0.74 EUR
4000+0.7 EUR
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SMLS14ENTT68 smls14entt68-e.pdf
SMLS14ENTT68
Hersteller: Rohm Semiconductor
Description: LED GREEN CLEAR 1206 SMD
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Color: Green
Size / Dimension: 3.20mm L x 1.60mm W
Mounting Type: Surface Mount
Millicandela Rating: 3000mcd
Configuration: Independent
Voltage - Forward (Vf) (Typ): 3.3V
Lens Color: Colorless
Current - Test: 20mA
Height (Max): 2.05mm
Wavelength - Dominant: 527nm
Supplier Device Package: 1206
Lens Transparency: Clear
Lens Style: Round with Domed Top
Lens Size: 1.60mm Dia
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15+1.48 EUR
100+1.01 EUR
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1000+0.79 EUR
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BV1HLC45EFJ-CE2 datasheet?p=BV1HLC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HLC45EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
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2500+1.26 EUR
5000+1.2 EUR
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BV1HLC45EFJ-CE2 datasheet?p=BV1HLC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HLC45EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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5+4.65 EUR
10+2.9 EUR
25+2.45 EUR
100+1.94 EUR
250+1.69 EUR
500+1.54 EUR
1000+1.4 EUR
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DTA124XCAT116 datasheet?p=DTA124XCA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124XCAT116
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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SFR01MZPF8203 sfr-e.pdf
SFR01MZPF8203
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 820 kOhms
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10000+0.032 EUR
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SFR01MZPF8203 sfr-e.pdf
SFR01MZPF8203
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 820 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
162+0.13 EUR
243+0.087 EUR
285+0.074 EUR
500+0.052 EUR
1000+0.046 EUR
5000+0.036 EUR
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SFR01MZPF8201 sfr-e.pdf
SFR01MZPF8201
Hersteller: Rohm Semiconductor
Description: RES SMD 8.2K OHM 1% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 8.2 kOhms
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10000+0.032 EUR
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SFR01MZPF8201 sfr-e.pdf
SFR01MZPF8201
Hersteller: Rohm Semiconductor
Description: RES SMD 8.2K OHM 1% 1/16W 0402
Resistance: 8.2 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Ratings: AEC-Q200
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
162+0.13 EUR
243+0.087 EUR
285+0.074 EUR
500+0.052 EUR
1000+0.046 EUR
5000+0.036 EUR
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DTA143TMT2L datasheet?p=DTA143TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA143TMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A VMT3
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Resistors Included: R1 Only
auf Bestellung 15800 Stücke:
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36+0.58 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
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BU9795AGUW-E2 bu9795afv-e.pdf
BU9795AGUW-E2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR MULTI 31X4COM 48-VBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Display Type: LCD
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 124 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 48-VBGA
Current - Supply: 20 µA
Produkt ist nicht verfügbar
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BD6041GUL-E2 datasheet?p=BD6041GUL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BD6041GUL-E2
Hersteller: Rohm Semiconductor
Description: IC CHARGER PROTECTION FET 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Protection
Operating Temperature: -35°C ~ 85°C (TA)
Supplier Device Package: 9-VCSP50L1 (1.6x1.6)
Fault Protection: Over Current, Over/Under Voltage
Produkt ist nicht verfügbar
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DTB523YETL datasheet?p=DTB523YE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB523YETL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 5898 Stücke:
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23+0.94 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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DTB543EE3TL datasheet?p=DTB543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB543EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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DTB543EE3TL datasheet?p=DTB543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB543EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
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23+0.92 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
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DTB543ZE3TL datasheet?p=DTB543ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB543ZE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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3000+0.2 EUR
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DTB543ZE3TL datasheet?p=DTB543ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB543ZE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A EMT3
Resistors Included: R1 and R2
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
38+0.56 EUR
100+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
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DTB523YMT2L datasheet?p=DTB523YM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTB523YMT2L
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 12V 0.5A VMT3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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