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RD3P130SPTL1 RD3P130SPTL1 Rohm Semiconductor datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RD3P130SPTL1 RD3P130SPTL1 Rohm Semiconductor datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 4104 Stücke:
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500+1.57 EUR
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RB161SS-207HFT2R Rohm Semiconductor Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
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BU7233SF-E2 BU7233SF-E2 Rohm Semiconductor datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
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BU7233SF-E2 BU7233SF-E2 Rohm Semiconductor datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
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10+1.96 EUR
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100+1.29 EUR
250+1.12 EUR
500+1.01 EUR
1000+0.92 EUR
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DTC114TE3HZGTL DTC114TE3HZGTL Rohm Semiconductor datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC114TE3HZGTL DTC114TE3HZGTL Rohm Semiconductor datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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500+0.20 EUR
1000+0.15 EUR
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RGTH80TS65DGC13 RGTH80TS65DGC13 Rohm Semiconductor datasheet?p=RGTH80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
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RGWS80TS65DGC13 RGWS80TS65DGC13 Rohm Semiconductor datasheet?p=RGWS80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
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RGS80TS65DHRC11 RGS80TS65DHRC11 Rohm Semiconductor datasheet?p=RGS80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
auf Bestellung 703 Stücke:
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RGSX5TS65DHRC11 RGSX5TS65DHRC11 Rohm Semiconductor datasheet?p=RGSX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
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RGWS00TS65DGC13 RGWS00TS65DGC13 Rohm Semiconductor datasheet?p=RGWS00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
auf Bestellung 600 Stücke:
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RGTH00TS65DGC13 RGTH00TS65DGC13 Rohm Semiconductor datasheet?p=RGTH00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 85A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
auf Bestellung 591 Stücke:
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RGWX5TS65DGC11 RGWX5TS65DGC11 Rohm Semiconductor datasheet?p=RGWX5TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/229ns
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
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RGT80TS65DGC13 RGT80TS65DGC13 Rohm Semiconductor datasheet?p=RGT80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 70A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
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RGT00TS65DGC13 RGT00TS65DGC13 Rohm Semiconductor rgt00ts65dgc13-e.pdf Description: IGBT TRNCH FIELD 650V 85A TO247G
Produkt ist nicht verfügbar
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RGTH50TS65DGC13 RGTH50TS65DGC13 Rohm Semiconductor datasheet?p=RGTH50TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 174 W
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RGT40TS65DGC13 RGT40TS65DGC13 Rohm Semiconductor datasheet?p=RGT40TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
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RGWX5TS65DHRC11 RGWX5TS65DHRC11 Rohm Semiconductor datasheet?p=RGWX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 332 Stücke:
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RGW00TS65DHRC11 RGW00TS65DHRC11 Rohm Semiconductor datasheet?p=RGW00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
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RGW80TS65DHRC11 RGW80TS65DHRC11 Rohm Semiconductor datasheet?p=RGW80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 446 Stücke:
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RGT50TS65DGC11 RGT50TS65DGC11 Rohm Semiconductor rgt50ts65d-e.pdf Description: IGBT TRENCH FS 650V 48A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
Produkt ist nicht verfügbar
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SFR18EZPF1503 SFR18EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
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SFR18EZPF1503 SFR18EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES 150K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
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50+0.35 EUR
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157+0.11 EUR
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1000+0.07 EUR
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BD7281YG-CTR BD7281YG-CTR Rohm Semiconductor datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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BD7281YG-CTR BD7281YG-CTR Rohm Semiconductor datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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RS6R035BHTB1 RS6R035BHTB1 Rohm Semiconductor rs6r035bhtb1-e.pdf Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
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RS6R035BHTB1 RS6R035BHTB1 Rohm Semiconductor rs6r035bhtb1-e.pdf Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
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BD82A26MUF-ME2 BD82A26MUF-ME2 Rohm Semiconductor datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD82A26MUF-ME2 BD82A26MUF-ME2 Rohm Semiconductor datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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RCJ160N20TL RCJ160N20TL Rohm Semiconductor datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RCJ160N20TL RCJ160N20TL Rohm Semiconductor datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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RR264MM-400TFTR RR264MM-400TFTR Rohm Semiconductor datasheet?p=RR264MM-400TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BD69740FV-GE2 BD69740FV-GE2 Rohm Semiconductor bd69740fv-e.pdf Description: IC MOTOR DRIVER 16SSOPB
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BD69740FV-GE2 BD69740FV-GE2 Rohm Semiconductor bd69740fv-e.pdf Description: IC MOTOR DRIVER 16SSOPB
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BD6971FS-E2 BD6971FS-E2 Rohm Semiconductor bd6971fs-e.pdf Description: IC MOTOR DRIVER 0V-7V 16SSOPA
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BD6973FV-E2 BD6973FV-E2 Rohm Semiconductor BD6973FV.pdf Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 12mA
Interface: PWM
Operating Temperature: -40°C ~ 100°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: Fan Controller
Technology: NMOS, PMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD6974FV-E2 BD6974FV-E2 Rohm Semiconductor BD6974FV Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
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BD63800MUF-EVK-002 BD63800MUF-EVK-002 Rohm Semiconductor bd63800muf-evk-002_ug-e.pdf Description: EVAL BOARD FOR BD63800
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD63800
Primary Attributes: 6V ~ 28V Supply
Secondary Attributes: On-Board Test Points
Embedded: Yes
Produkt ist nicht verfügbar
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VS54VLNVWMTR VS54VLNVWMTR Rohm Semiconductor datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTR VS54VLNVWMTR Rohm Semiconductor datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTFTR VS54VLNVWMTFTR Rohm Semiconductor datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTFTR VS54VLNVWMTFTR Rohm Semiconductor datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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SDR03EZPD68R0 SDR03EZPD68R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD68R0 SDR03EZPD68R0 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
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BH1900NUX-EVK-001 Rohm Semiconductor bh1900nux-evk-001_ug-e.pdf Description: TEMPERATURE SENSOR EVALUATION BO
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DSK9J01Q0L Rohm Semiconductor Description: TRANS JFET N-CH 30MA SMD
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RBR5L60ADDTE25 RBR5L60ADDTE25 Rohm Semiconductor datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
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RBR5L60ADDTE25 RBR5L60ADDTE25 Rohm Semiconductor datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
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RBR20NS40ATL RBR20NS40ATL Rohm Semiconductor datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40ATL RBR20NS40ATL Rohm Semiconductor datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40AFHTL RBR20NS40AFHTL Rohm Semiconductor datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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1000+1.00 EUR
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RBR20NS40AFHTL RBR20NS40AFHTL Rohm Semiconductor datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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BD65B60GWL-E2 BD65B60GWL-E2 Rohm Semiconductor datasheet?p=BD65B60GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC WHITE LED DVR 28.5V 50UCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, CSPBGA
Voltage - Output: 28.5V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 600kHz, 1.1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 12-UCSP50L1 (1.4x1.8)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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SH8K26GZ0TB1 SH8K26GZ0TB1 Rohm Semiconductor datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 40V NCH+NCH POWER MOSFET : MIDDL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8K26GZ0TB1 SH8K26GZ0TB1 Rohm Semiconductor datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 40V NCH+NCH POWER MOSFET : MIDDL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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RGS00TS65EHRC11 RGS00TS65EHRC11 Rohm Semiconductor datasheet?p=RGS00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
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RGW80TS65EHRC11 RGW80TS65EHRC11 Rohm Semiconductor datasheet?p=RGW80TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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RGWX5TS65EHRC11 RGWX5TS65EHRC11 Rohm Semiconductor datasheet?p=RGWX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 59ns/243ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
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RGW00TS65EHRC11 RGW00TS65EHRC11 Rohm Semiconductor datasheet?p=RGW00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/183ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
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RD3P130SPTL1 datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P130SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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RD3P130SPTL1 datasheet?p=RD3P130SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RD3P130SPTL1
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 4104 Stücke:
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RB161SS-207HFT2R
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 1A KMD2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: KMD2
Operating Temperature - Junction: 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar
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BU7233SF-E2 datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233SF-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
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BU7233SF-E2 datasheet?p=BU7233SF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU7233SF-E2
Hersteller: Rohm Semiconductor
Description: IC COMPARATOR 2 CMOS 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: CMOS, Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: CMOS
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 1.8V ~ 5.5V, ±0.9V ~ 2.75V
Supplier Device Package: 8-SOP
Propagation Delay (Max): 1.8µs
Current - Quiescent (Max): 25µA
Voltage - Input Offset (Max): 11mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 6mA @ 3V
CMRR, PSRR (Typ): 80dB CMRR, 80dB PSRR
Part Status: Active
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6+3.17 EUR
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DTC114TE3HZGTL datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TE3HZGTL
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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DTC114TE3HZGTL datasheet?p=DTC114TE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC114TE3HZGTL
Hersteller: Rohm Semiconductor
Description: NPN DIGITAL TRANSISTOR (AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
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RGTH80TS65DGC13 datasheet?p=RGTH80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 70A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
auf Bestellung 593 Stücke:
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RGWS80TS65DGC13 datasheet?p=RGWS80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 71A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/114ns
Switching Energy: 700µJ (on), 660µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 83 nC
Current - Collector (Ic) (Max): 71 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 202 W
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RGS80TS65DHRC11 datasheet?p=RGS80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS80TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 73A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
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2+15.24 EUR
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RGSX5TS65DHRC11 datasheet?p=RGSX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGSX5TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
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RGWS00TS65DGC13 datasheet?p=RGWS00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWS00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/145ns
Switching Energy: 980µJ (on), 910µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 108 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 245 W
auf Bestellung 600 Stücke:
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2+12.23 EUR
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120+5.94 EUR
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RGTH00TS65DGC13 datasheet?p=RGTH00TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
auf Bestellung 591 Stücke:
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2+12.28 EUR
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RGWX5TS65DGC11 datasheet?p=RGWX5TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/229ns
Switching Energy: 2.39mJ (on), 1.68mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 400 Stücke:
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2+10.23 EUR
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RGT80TS65DGC13 datasheet?p=RGT80TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT80TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 70A TO-247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 236 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
auf Bestellung 600 Stücke:
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2+13.25 EUR
10+9.19 EUR
100+9.13 EUR
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RGT00TS65DGC13 rgt00ts65dgc13-e.pdf
RGT00TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 85A TO247G
Produkt ist nicht verfügbar
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RGTH50TS65DGC13 datasheet?p=RGTH50TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGTH50TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 50A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/94ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 174 W
auf Bestellung 600 Stücke:
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3+7.11 EUR
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RGT40TS65DGC13 datasheet?p=RGT40TS65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGT40TS65DGC13
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 40A TO247G
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247G
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/75ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 144 W
auf Bestellung 600 Stücke:
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2+11.21 EUR
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RGWX5TS65DHRC11 datasheet?p=RGWX5TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 332 Stücke:
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2+10.05 EUR
10+8.61 EUR
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RGW00TS65DHRC11 datasheet?p=RGW00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 425 Stücke:
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2+10.23 EUR
10+7.01 EUR
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RGW80TS65DHRC11 datasheet?p=RGW80TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65DHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 446 Stücke:
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2+9.35 EUR
10+6.37 EUR
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RGT50TS65DGC11 rgt50ts65d-e.pdf
RGT50TS65DGC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
Produkt ist nicht verfügbar
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SFR18EZPF1503 sfr-e.pdf
SFR18EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
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5000+0.06 EUR
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SFR18EZPF1503 sfr-e.pdf
SFR18EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 1/4W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 9950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
93+0.19 EUR
135+0.13 EUR
157+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 50
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BD7281YG-CTR datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7281YG-CTR
Hersteller: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BD7281YG-CTR datasheet?p=BD7281YG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD7281YG-CTR
Hersteller: Rohm Semiconductor
Description: NANO CAP, LOW NOISE & INPUT/OUTP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.7mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 7 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-SSOP
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2284 Stücke:
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Anzahl Preis
5+4.28 EUR
10+2.69 EUR
25+2.27 EUR
100+1.80 EUR
250+1.57 EUR
500+1.43 EUR
1000+1.31 EUR
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RS6R035BHTB1 rs6r035bhtb1-e.pdf
RS6R035BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
Produkt ist nicht verfügbar
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RS6R035BHTB1 rs6r035bhtb1-e.pdf
RS6R035BHTB1
Hersteller: Rohm Semiconductor
Description: NCH 150V 35A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 75 V
auf Bestellung 2410 Stücke:
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Anzahl Preis
4+4.54 EUR
10+3.09 EUR
100+2.20 EUR
500+1.78 EUR
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BD82A26MUF-ME2 datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD82A26MUF-ME2
Hersteller: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BD82A26MUF-ME2 datasheet?p=BD82A26MUF-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD82A26MUF-ME2
Hersteller: Rohm Semiconductor
Description: NANO CAP, WHITE LED DRIVER FOR A
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Voltage - Output: 50V
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 6
Frequency: 270kHz ~ 2.42MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Backlight
Current - Output / Channel: 150mA
Internal Switch(s): No
Topology: Step-Up (Boost)
Supplier Device Package: VQFN32FBV050
Dimming: Analog, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 48V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2350 Stücke:
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Anzahl Preis
3+8.29 EUR
10+6.32 EUR
25+5.83 EUR
100+5.29 EUR
250+5.03 EUR
500+4.87 EUR
1000+4.75 EUR
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RCJ160N20TL datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ160N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 1000 Stücke:
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1000+1.18 EUR
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RCJ160N20TL datasheet?p=RCJ160N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ160N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 16A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8A, 10V
Power Dissipation (Max): 1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5.25V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
5+4.10 EUR
10+2.65 EUR
100+1.81 EUR
500+1.45 EUR
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RR264MM-400TFTR datasheet?p=RR264MM-400TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RR264MM-400TFTR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 400V 700MA PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 10271 Stücke:
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Anzahl Preis
27+0.67 EUR
39+0.46 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 27
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BD69740FV-GE2 bd69740fv-e.pdf
BD69740FV-GE2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Produkt ist nicht verfügbar
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BD69740FV-GE2 bd69740fv-e.pdf
BD69740FV-GE2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 16SSOPB
Produkt ist nicht verfügbar
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BD6971FS-E2 bd6971fs-e.pdf
BD6971FS-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 0V-7V 16SSOPA
Produkt ist nicht verfügbar
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BD6973FV-E2 BD6973FV.pdf
BD6973FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 12mA
Interface: PWM
Operating Temperature: -40°C ~ 100°C
Output Configuration: Pre-Driver - Half Bridge (2)
Voltage - Supply: 4.3V ~ 17V
Applications: Fan Controller
Technology: NMOS, PMOS
Supplier Device Package: 16-SSOP-B
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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BD6974FV-E2 BD6974FV
BD6974FV-E2
Hersteller: Rohm Semiconductor
Description: IC MOTOR DRIVER 4.3V-17V 16SSOPB
Produkt ist nicht verfügbar
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BD63800MUF-EVK-002 bd63800muf-evk-002_ug-e.pdf
BD63800MUF-EVK-002
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BD63800
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: BD63800
Primary Attributes: 6V ~ 28V Supply
Secondary Attributes: On-Board Test Points
Embedded: Yes
Produkt ist nicht verfügbar
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VS54VLNVWMTR datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTR
Hersteller: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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VS54VLNVWMTR datasheet?p=VS54VLNVWM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTR
Hersteller: Rohm Semiconductor
Description: 54V 200W, COMPACT AND HIGHLY REL
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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22+0.83 EUR
25+0.71 EUR
100+0.49 EUR
500+0.38 EUR
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VS54VLNVWMTFTR datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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VS54VLNVWMTFTR datasheet?p=VS54VLNVWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS54VLNVWMTFTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 54VWM 87.1VC PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 54V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 58V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 200W
Power Line Protection: No
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16+1.13 EUR
24+0.75 EUR
100+0.51 EUR
500+0.40 EUR
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SDR03EZPD68R0 sdr-e.pdf
SDR03EZPD68R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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SDR03EZPD68R0 sdr-e.pdf
SDR03EZPD68R0
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
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44+0.40 EUR
52+0.34 EUR
131+0.13 EUR
1000+0.06 EUR
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BH1900NUX-EVK-001 bh1900nux-evk-001_ug-e.pdf
Hersteller: Rohm Semiconductor
Description: TEMPERATURE SENSOR EVALUATION BO
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DSK9J01Q0L
Hersteller: Rohm Semiconductor
Description: TRANS JFET N-CH 30MA SMD
Produkt ist nicht verfügbar
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RBR5L60ADDTE25 datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR5L60ADDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
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RBR5L60ADDTE25 datasheet?p=RBR5L60ADD&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR5L60ADDTE25
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 5A PMDS
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
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13+1.41 EUR
16+1.15 EUR
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RBR20NS40ATL datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40ATL datasheet?p=RBR20NS40A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 10A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
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RBR20NS40AFHTL datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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1000+1.00 EUR
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RBR20NS40AFHTL datasheet?p=RBR20NS40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBR20NS40AFHTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 20A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 40 V
Qualification: AEC-Q101
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BD65B60GWL-E2 datasheet?p=BD65B60GWL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD65B60GWL-E2
Hersteller: Rohm Semiconductor
Description: IC WHITE LED DVR 28.5V 50UCSP
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, CSPBGA
Voltage - Output: 28.5V
Mounting Type: Surface Mount
Number of Outputs: 2
Frequency: 600kHz, 1.1MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 25mA
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 12-UCSP50L1 (1.4x1.8)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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SH8K26GZ0TB1 datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K26GZ0TB1
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8K26GZ0TB1 datasheet?p=SH8K26&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K26GZ0TB1
Hersteller: Rohm Semiconductor
Description: 40V NCH+NCH POWER MOSFET : MIDDL
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4986 Stücke:
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8+2.32 EUR
10+2.08 EUR
100+1.62 EUR
500+1.34 EUR
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RGS00TS65EHRC11 datasheet?p=RGS00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGS00TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
auf Bestellung 444 Stücke:
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2+11.58 EUR
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RGW80TS65EHRC11 datasheet?p=RGW80TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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RGWX5TS65EHRC11 datasheet?p=RGWX5TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 59ns/243ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 450 Stücke:
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1+19.84 EUR
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RGW00TS65EHRC11 datasheet?p=RGW00TS65EHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65EHRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/183ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 448 Stücke:
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2+13.96 EUR
10+11.97 EUR
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