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BV1HJ045EFJ-CE2 BV1HJ045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HJ045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Supplier Device Package: 8-HTSOP-J
Ratio - Input:Output: 1:1
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
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25+2.27 EUR
100+2.02 EUR
250+1.9 EUR
500+1.83 EUR
1000+1.77 EUR
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LM358WPT LM358WPT Rohm Semiconductor LM358%2CLM324%2CLM2904%2CLM2902.pdf Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Supplier Device Package: 8-TSSOP-B
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 800 kHz
Slew Rate: 0.3V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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ESR01MZPJ Rohm Semiconductor esr-e.pdf Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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ESR01MZPF Rohm Semiconductor esr-e.pdf Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
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BM2P181S-Z BM2P181S-Z Rohm Semiconductor datasheet?p=BM2P181S-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NON-ISOLATED TYPE PWM DC/DC CONV
Voltage - Input (Min): 12V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
Topology: Buck
Voltage - Input (Max): 20.68V
Frequency - Switching: 25kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Function: Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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500+2.39 EUR
1000+2.32 EUR
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RB511VM-40TE-17 RB511VM-40TE-17 Rohm Semiconductor datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
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RB511VM-40TE-17 RB511VM-40TE-17 Rohm Semiconductor datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
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RB511VM-30FHTE-17 RB511VM-30FHTE-17 Rohm Semiconductor RB511VM-30FH.pdf Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
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RB511VM-30FHTE-17 RB511VM-30FHTE-17 Rohm Semiconductor RB511VM-30FH.pdf Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
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R6027YNXC7G R6027YNXC7G Rohm Semiconductor r6027ynxc7g-e.pdf Description: NCH 600V 14A, TO-220FM, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
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BU4920F-TR BU4920F-TR Rohm Semiconductor datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BU4920F-TR BU4920F-TR Rohm Semiconductor datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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22+1 EUR
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100+0.76 EUR
250+0.7 EUR
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BV1HJC45EFJ-CE2 BV1HJC45EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BV1HJC45EFJ-CE2 BV1HJC45EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BV1HL045EFJ-CE2 BV1HL045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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2500+1.77 EUR
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BV1HL045EFJ-CE2 BV1HL045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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10+2.57 EUR
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100+2.08 EUR
250+1.96 EUR
500+1.89 EUR
1000+1.83 EUR
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LTR100LJZPJSR047 LTR100LJZPJSR047 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
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LTR100LJZPJSR047 LTR100LJZPJSR047 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
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25+1.12 EUR
50+1.06 EUR
100+0.94 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.82 EUR
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LTR100JZPFLR180 LTR100JZPFLR180 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
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LTR100JZPFLR180 LTR100JZPFLR180 Rohm Semiconductor ltr-low-e.pdf Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
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TRR01MZPF2261 TRR01MZPF2261 Rohm Semiconductor TRR_Series_DS.pdf Description: RES SMD 2.26K OHM 1% 1/16W 0402
Resistance: 2.26 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
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170+0.12 EUR
220+0.095 EUR
262+0.08 EUR
308+0.068 EUR
376+0.056 EUR
500+0.049 EUR
1000+0.043 EUR
5000+0.035 EUR
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ESR18EZPD3001 ESR18EZPD3001 Rohm Semiconductor esr-e.pdf Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
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ESR18EZPD3001 ESR18EZPD3001 Rohm Semiconductor esr-e.pdf Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
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91+0.24 EUR
113+0.19 EUR
131+0.15 EUR
151+0.14 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.098 EUR
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ESR10EZPD1203 ESR10EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
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ESR10EZPD1203 ESR10EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
auf Bestellung 4850 Stücke:
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53+0.39 EUR
103+0.2 EUR
129+0.17 EUR
150+0.14 EUR
174+0.12 EUR
250+0.1 EUR
500+0.092 EUR
1000+0.083 EUR
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ESR18EZPD1203 ESR18EZPD1203 Rohm Semiconductor esr-e.pdf Description: RES 120K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
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5000+0.083 EUR
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SFR03EZPF4872 SFR03EZPF4872 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
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Lieferzeit 10-14 Tag (e)
5000+0.035 EUR
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SFR03EZPF4872 SFR03EZPF4872 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
170+0.12 EUR
253+0.083 EUR
297+0.07 EUR
500+0.051 EUR
1000+0.044 EUR
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SDR03EZPF4871 SDR03EZPF4871 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
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5000+0.045 EUR
10000+0.042 EUR
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SDR03EZPF4871 SDR03EZPF4871 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
129+0.17 EUR
191+0.11 EUR
223+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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SDR03EZPF4873 SDR03EZPF4873 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
auf Bestellung 5000 Stücke:
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5000+0.045 EUR
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SDR03EZPF4873 SDR03EZPF4873 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
129+0.17 EUR
191+0.11 EUR
223+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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QS8M51HZGTR QS8M51HZGTR Rohm Semiconductor datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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QS8M51HZGTR QS8M51HZGTR Rohm Semiconductor datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1269 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.78 EUR
12+1.75 EUR
50+1.31 EUR
100+1.17 EUR
500+0.92 EUR
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RQ1E070RPHZGTR RQ1E070RPHZGTR Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
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RQ1E070RPHZGTR RQ1E070RPHZGTR Rohm Semiconductor Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
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RQ1A070ZPHZGTR RQ1A070ZPHZGTR Rohm Semiconductor datasheet?p=RQ1A070ZPHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
Produkt ist nicht verfügbar
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RQ1A070ZPHZGTR RQ1A070ZPHZGTR Rohm Semiconductor datasheet?p=RQ1A070ZPHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
auf Bestellung 2063 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.06 EUR
11+1.95 EUR
50+1.45 EUR
100+1.3 EUR
500+1.02 EUR
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RQ1E050RPFRATR Rohm Semiconductor Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RQ1E050RPFRATR Rohm Semiconductor Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESR10EZPD5102 ESR10EZPD5102 Rohm Semiconductor esr-e.pdf Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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ESR10EZPD5102 ESR10EZPD5102 Rohm Semiconductor esr-e.pdf Description: RES 51K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
99+0.21 EUR
124+0.17 EUR
145+0.14 EUR
167+0.13 EUR
250+0.11 EUR
500+0.095 EUR
1000+0.086 EUR
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RFN2VWM2STR RFN2VWM2STR Rohm Semiconductor datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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RFN2VWM2STR RFN2VWM2STR Rohm Semiconductor datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE STANDARD 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1366 Stücke:
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16+1.32 EUR
26+0.82 EUR
50+0.6 EUR
100+0.52 EUR
500+0.39 EUR
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RFN2VWM2STFTR RFN2VWM2STFTR Rohm Semiconductor datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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RFN2VWM2STFTR RFN2VWM2STFTR Rohm Semiconductor datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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17+1.26 EUR
20+1.06 EUR
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ESR03EZPF4992 ESR03EZPF4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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ESR03EZPF4992 ESR03EZPF4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
auf Bestellung 4275 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
139+0.15 EUR
251+0.083 EUR
1000+0.052 EUR
2500+0.048 EUR
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ESR03EZPD4992 ESR03EZPD4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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ESR03EZPD4992 ESR03EZPD4992 Rohm Semiconductor esr-e.pdf Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
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R6004KNXC7G R6004KNXC7G Rohm Semiconductor r6004knx-e.pdf Description: 600V 4A TO-220FM, HIGH-SPEED SWI
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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R6007KND3TL1 R6007KND3TL1 Rohm Semiconductor Description: NCH 600V 7A TO-252, HIGH-SPEED S
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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R6007KND3TL1 R6007KND3TL1 Rohm Semiconductor Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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R6009KND3TL1 R6009KND3TL1 Rohm Semiconductor datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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R6009KND3TL1 R6009KND3TL1 Rohm Semiconductor datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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BR24G32F-3AGTE2 BR24G32F-3AGTE2 Rohm Semiconductor datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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BR24G32F-3AGTE2 BR24G32F-3AGTE2 Rohm Semiconductor datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
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BR24G32FJ-3AGTE2 BR24G32FJ-3AGTE2 Rohm Semiconductor br24g32-3a-e.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BR24G32FJ-3AGTE2 BR24G32FJ-3AGTE2 Rohm Semiconductor br24g32-3a-e.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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VS6V5UA1VWMTFTR VS6V5UA1VWMTFTR Rohm Semiconductor datasheet?p=VS6V5UA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 6.5V 200W, COMPACT AND HIGHLY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
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BV1HJ045EFJ-CE2 datasheet?p=BV1HJ045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HJ045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Supplier Device Package: 8-HTSOP-J
Ratio - Input:Output: 1:1
Current - Output (Max): 5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
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LM358WPT LM358%2CLM324%2CLM2904%2CLM2902.pdf
LM358WPT
Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 2 CIRCUIT 8TSSOP
Voltage - Supply Span (Max): 32 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 30 mA
Number of Circuits: 2
Supplier Device Package: 8-TSSOP-B
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 800 kHz
Slew Rate: 0.3V/µs
Current - Supply: 600µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESR01MZPJ esr-e.pdf
Hersteller: Rohm Semiconductor
Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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ESR01MZPF esr-e.pdf
Hersteller: Rohm Semiconductor
Description: RES 0 OHM JUMPER 1/5W 0402
Power (Watts): 0.2W, 1/5W
Tolerance: Jumper
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 0 Ohms
Produkt ist nicht verfügbar
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BM2P181S-Z datasheet?p=BM2P181S-Z&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BM2P181S-Z
Hersteller: Rohm Semiconductor
Description: NON-ISOLATED TYPE PWM DC/DC CONV
Voltage - Input (Min): 12V
Synchronous Rectifier: No
Supplier Device Package: 7-DIPK
Topology: Buck
Voltage - Input (Max): 20.68V
Frequency - Switching: 25kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C
Function: Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
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RB511VM-40TE-17 datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB511VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
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RB511VM-40TE-17 datasheet?p=RB511VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB511VM-40TE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
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RB511VM-30FHTE-17 RB511VM-30FH.pdf
RB511VM-30FHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
Produkt ist nicht verfügbar
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RB511VM-30FHTE-17 RB511VM-30FH.pdf
RB511VM-30FHTE-17
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 10 mA
Current - Reverse Leakage @ Vr: 7 µA @ 10 V
Produkt ist nicht verfügbar
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R6027YNXC7G r6027ynxc7g-e.pdf
R6027YNXC7G
Hersteller: Rohm Semiconductor
Description: NCH 600V 14A, TO-220FM, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 7A, 12V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
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BU4920F-TR datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4920F-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BU4920F-TR datasheet?p=BU4920F&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4920F-TR
Hersteller: Rohm Semiconductor
Description: IC SUPERVISOR 1 CHANNEL 4SOP
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 1
Voltage - Threshold: 2V
Supplier Device Package: 4-SOP
DigiKey Programmable: Not Verified
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BV1HJC45EFJ-CE2 datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HJC45EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BV1HJC45EFJ-CE2 datasheet?p=BV1HJC45EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HJC45EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS, 1CH H
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2308 Stücke:
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AnzahlPrivatkunde
5+4.65 EUR
10+2.9 EUR
25+2.45 EUR
100+1.94 EUR
250+1.69 EUR
500+1.54 EUR
1000+1.4 EUR
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BV1HL045EFJ-CE2 datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HL045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.77 EUR
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BV1HL045EFJ-CE2 datasheet?p=BV1HL045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HL045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: BUILT-IN OUTPUT DIAGNOSIS 1CH HI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2772 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.5 EUR
10+2.57 EUR
25+2.34 EUR
100+2.08 EUR
250+1.96 EUR
500+1.89 EUR
1000+1.83 EUR
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LTR100LJZPJSR047 ltr-low-e.pdf
LTR100LJZPJSR047
Hersteller: Rohm Semiconductor
Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
Produkt ist nicht verfügbar
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LTR100LJZPJSR047 ltr-low-e.pdf
LTR100LJZPJSR047
Hersteller: Rohm Semiconductor
Description: RES 0.047 OHM 5% 4W 2512 WIDE
Power (Watts): 4W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.122" L x 0.252" W (3.10mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.029" (0.73mm)
Resistance: 47 mOhms
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
16+1.32 EUR
25+1.12 EUR
50+1.06 EUR
100+0.94 EUR
250+0.9 EUR
500+0.86 EUR
1000+0.82 EUR
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LTR100JZPFLR180 ltr-low-e.pdf
LTR100JZPFLR180
Hersteller: Rohm Semiconductor
Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
Produkt ist nicht verfügbar
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LTR100JZPFLR180 ltr-low-e.pdf
LTR100JZPFLR180
Hersteller: Rohm Semiconductor
Description: RES SMD 0.18 OHM 1% 2W 2512 WIDE
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: 0/ +150ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 180 MOhms
auf Bestellung 3998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.87 EUR
13+1.7 EUR
50+1.25 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
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TRR01MZPF2261 TRR_Series_DS.pdf
TRR01MZPF2261
Hersteller: Rohm Semiconductor
Description: RES SMD 2.26K OHM 1% 1/16W 0402
Resistance: 2.26 kOhms
Height - Seated (Max): 0.016" (0.40mm)
Supplier Device Package: 0402
Number of Terminations: 2
Operating Temperature: -55°C ~ 155°C
Composition: Thick Film
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Temperature Coefficient: ±100ppm/°C
Package / Case: 0402 (1005 Metric)
Features: Anti-Sulfur, Automotive AEC-Q200
Tolerance: ±1%
Power (Watts): 0.063W, 1/16W
Packaging: Cut Tape (CT)
auf Bestellung 8514 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
170+0.12 EUR
220+0.095 EUR
262+0.08 EUR
308+0.068 EUR
376+0.056 EUR
500+0.049 EUR
1000+0.043 EUR
5000+0.035 EUR
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ESR18EZPD3001 esr-e.pdf
ESR18EZPD3001
Hersteller: Rohm Semiconductor
Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
Produkt ist nicht verfügbar
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ESR18EZPD3001 esr-e.pdf
ESR18EZPD3001
Hersteller: Rohm Semiconductor
Description: RES 3K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3 kOhms
auf Bestellung 4561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
91+0.24 EUR
113+0.19 EUR
131+0.15 EUR
151+0.14 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.098 EUR
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ESR10EZPD1203 esr-e.pdf
ESR10EZPD1203
Hersteller: Rohm Semiconductor
Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
Produkt ist nicht verfügbar
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ESR10EZPD1203 esr-e.pdf
ESR10EZPD1203
Hersteller: Rohm Semiconductor
Description: RES 120K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
auf Bestellung 4850 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
103+0.2 EUR
129+0.17 EUR
150+0.14 EUR
174+0.12 EUR
250+0.1 EUR
500+0.092 EUR
1000+0.083 EUR
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ESR18EZPD1203 esr-e.pdf
ESR18EZPD1203
Hersteller: Rohm Semiconductor
Description: RES 120K OHM 0.5% 1/2W 1206
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 120 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.083 EUR
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SFR03EZPF4872 sfr-e.pdf
SFR03EZPF4872
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.035 EUR
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SFR03EZPF4872 sfr-e.pdf
SFR03EZPF4872
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 48.7 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
170+0.12 EUR
253+0.083 EUR
297+0.07 EUR
500+0.051 EUR
1000+0.044 EUR
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SDR03EZPF4871 sdr-e.pdf
SDR03EZPF4871
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.045 EUR
10000+0.042 EUR
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SDR03EZPF4871 sdr-e.pdf
SDR03EZPF4871
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 4.87 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
129+0.17 EUR
191+0.11 EUR
223+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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SDR03EZPF4873 sdr-e.pdf
SDR03EZPF4873
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.045 EUR
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SDR03EZPF4873 sdr-e.pdf
SDR03EZPF4873
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 487 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
129+0.17 EUR
191+0.11 EUR
223+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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QS8M51HZGTR datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
QS8M51HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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QS8M51HZGTR datasheet?p=QS8M51HZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
QS8M51HZGTR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 2A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V, 950pF @ 25V
Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V, 17nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
12+1.75 EUR
50+1.31 EUR
100+1.17 EUR
500+0.92 EUR
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RQ1E070RPHZGTR
RQ1E070RPHZGTR
Hersteller: Rohm Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
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RQ1E070RPHZGTR
RQ1E070RPHZGTR
Hersteller: Rohm Semiconductor
Description: PCH -30V -7A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Produkt ist nicht verfügbar
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RQ1A070ZPHZGTR datasheet?p=RQ1A070ZPHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ1A070ZPHZGTR
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
Produkt ist nicht verfügbar
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RQ1A070ZPHZGTR datasheet?p=RQ1A070ZPHZG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RQ1A070ZPHZGTR
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE PCH -12V -7A SMALL SI
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 6 V
auf Bestellung 2063 Stücke:
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11+1.95 EUR
50+1.45 EUR
100+1.3 EUR
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RQ1E050RPFRATR
Hersteller: Rohm Semiconductor
Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RQ1E050RPFRATR
Hersteller: Rohm Semiconductor
Description: PCH -30V -5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESR10EZPD5102 esr-e.pdf
ESR10EZPD5102
Hersteller: Rohm Semiconductor
Description: RES 51K OHM 0.5% 2/5W 0805
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
Produkt ist nicht verfügbar
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ESR10EZPD5102 esr-e.pdf
ESR10EZPD5102
Hersteller: Rohm Semiconductor
Description: RES 51K OHM 0.5% 2/5W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 51 kOhms
auf Bestellung 4830 Stücke:
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50+0.42 EUR
99+0.21 EUR
124+0.17 EUR
145+0.14 EUR
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250+0.11 EUR
500+0.095 EUR
1000+0.086 EUR
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RFN2VWM2STR datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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RFN2VWM2STR datasheet?p=RFN2VWM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STR
Hersteller: Rohm Semiconductor
Description: DIODE STANDARD 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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RFN2VWM2STFTR datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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RFN2VWM2STFTR datasheet?p=RFN2VWM2STF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN2VWM2STFTR
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 2A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ESR03EZPF4992 esr-e.pdf
ESR03EZPF4992
Hersteller: Rohm Semiconductor
Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
Produkt ist nicht verfügbar
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ESR03EZPF4992 esr-e.pdf
ESR03EZPF4992
Hersteller: Rohm Semiconductor
Description: RES 49.9K OHM 1% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
auf Bestellung 4275 Stücke:
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AnzahlPrivatkunde
72+0.3 EUR
139+0.15 EUR
251+0.083 EUR
1000+0.052 EUR
2500+0.048 EUR
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ESR03EZPD4992 esr-e.pdf
ESR03EZPD4992
Hersteller: Rohm Semiconductor
Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ESR03EZPD4992 esr-e.pdf
ESR03EZPD4992
Hersteller: Rohm Semiconductor
Description: RES 49.9K OHM 0.5% 1/4W 0603
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 49.9 kOhms
auf Bestellung 4790 Stücke:
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AnzahlPrivatkunde
53+0.39 EUR
98+0.21 EUR
141+0.15 EUR
164+0.13 EUR
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R6004KNXC7G r6004knx-e.pdf
R6004KNXC7G
Hersteller: Rohm Semiconductor
Description: 600V 4A TO-220FM, HIGH-SPEED SWI
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 945 Stücke:
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4+5.43 EUR
10+3.5 EUR
50+2.68 EUR
100+2.4 EUR
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R6007KND3TL1
R6007KND3TL1
Hersteller: Rohm Semiconductor
Description: NCH 600V 7A TO-252, HIGH-SPEED S
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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R6007KND3TL1
R6007KND3TL1
Hersteller: Rohm Semiconductor
Description: NCH 600V 7A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Produkt ist nicht verfügbar
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R6009KND3TL1 datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6009KND3TL1
Hersteller: Rohm Semiconductor
Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 2500 Stücke:
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2500+1.27 EUR
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R6009KND3TL1 datasheet?p=R6009KND3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6009KND3TL1
Hersteller: Rohm Semiconductor
Description: NCH 600V 9A TO-252, HIGH-SPEED S
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 535mOhm @ 2.8A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
6+4.05 EUR
10+2.71 EUR
100+1.9 EUR
500+1.52 EUR
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BR24G32F-3AGTE2 datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G32F-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24G32F-3AGTE2 datasheet?p=BR24G32F-3A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24G32F-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOP
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
auf Bestellung 2176 Stücke:
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34+0.63 EUR
36+0.58 EUR
37+0.57 EUR
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BR24G32FJ-3AGTE2 br24g32-3a-e.pdf
BR24G32FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24G32FJ-3AGTE2 br24g32-3a-e.pdf
BR24G32FJ-3AGTE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 32KBIT I2C 1MHZ 8SOPJ
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOP-J
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2231 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
28+0.75 EUR
50+0.74 EUR
100+0.73 EUR
250+0.7 EUR
500+0.69 EUR
1000+0.67 EUR
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VS6V5UA1VWMTFTR datasheet?p=VS6V5UA1VWMTF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
VS6V5UA1VWMTFTR
Hersteller: Rohm Semiconductor
Description: 6.5V 200W, COMPACT AND HIGHLY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Current - Peak Pulse (10/1000µs): 17.9A
Voltage - Reverse Standoff (Typ): 6.5V (Max)
Supplier Device Package: PMDE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.39 EUR
Mindestbestellmenge: 3000 Stücke
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