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R6535ENZC17 R6535ENZC17 Rohm Semiconductor datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 300 Stücke:
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10+10.39 EUR
100+8.66 EUR
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R6530ENZC17 R6530ENZC17 Rohm Semiconductor datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 300 Stücke:
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R6524KNZC17 R6524KNZC17 Rohm Semiconductor datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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SCT4036KEC11 SCT4036KEC11 Rohm Semiconductor datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4654 Stücke:
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SCT4026DEHRC11 SCT4026DEHRC11 Rohm Semiconductor datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
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SCT4036KEHRC11 SCT4036KEHRC11 Rohm Semiconductor datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 289 Stücke:
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SCT4026DEC11 SCT4026DEC11 Rohm Semiconductor datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
auf Bestellung 4843 Stücke:
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SCT4062KEHRC11 SCT4062KEHRC11 Rohm Semiconductor datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 153 Stücke:
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2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SAR552P5T100 2SAR552P5T100 Rohm Semiconductor datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1534 Stücke:
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2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
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1000+0.5 EUR
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2SAR375P5T100R 2SAR375P5T100R Rohm Semiconductor 2sar375p5t100q-e.pdf Description: TRANS PNP 120V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 3543 Stücke:
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DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTA123JE3HZGTL DTA123JE3HZGTL Rohm Semiconductor datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
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28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
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DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Produkt ist nicht verfügbar
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DTC115EUBTL DTC115EUBTL Rohm Semiconductor datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2990 Stücke:
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34+0.53 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 34
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ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
Produkt ist nicht verfügbar
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ESR01MZPF1001 ESR01MZPF1001 Rohm Semiconductor esr-e.pdf Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
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34+0.53 EUR
64+0.28 EUR
100+0.21 EUR
500+0.12 EUR
1000+0.086 EUR
5000+0.072 EUR
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LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
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LTR50UZPFSR030 LTR50UZPFSR030 Rohm Semiconductor ltr-low-e.pdf Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
auf Bestellung 4996 Stücke:
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11+1.67 EUR
12+1.48 EUR
50+1.24 EUR
100+1.07 EUR
500+0.76 EUR
1000+0.63 EUR
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RSA12LAGTR RSA12LAGTR Rohm Semiconductor Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Tape & Reel (TR)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
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PML10EZPJV1L0 PML10EZPJV1L0 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Cut Tape (CT)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
auf Bestellung 4105 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
21+0.85 EUR
100+0.49 EUR
1000+0.28 EUR
2500+0.27 EUR
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PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
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PML10EZPGV1L00 PML10EZPGV1L00 Rohm Semiconductor pml-e.pdf Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
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RGW00TS65HRC11 RGW00TS65HRC11 Rohm Semiconductor datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 450 Stücke:
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RGWX5TS65HRC11 RGWX5TS65HRC11 Rohm Semiconductor datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 132A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
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RGW80TS65HRC11 RGW80TS65HRC11 Rohm Semiconductor datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IGBT TRENCH FS 650V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
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UFZVTE-175.1B UFZVTE-175.1B Rohm Semiconductor datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 500MW 5.1V, SOD-323FL, SMALL AND
Packaging: Cut Tape (CT)
Tolerance: ±2.55%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: UMD2
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
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100+0.29 EUR
500+0.19 EUR
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BR24T64FVT-WE2 BR24T64FVT-WE2 Rohm Semiconductor datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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100+0.6 EUR
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ML9213GPZ03A-M Rohm Semiconductor Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
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SFR03EZPF1503 SFR03EZPF1503 Rohm Semiconductor sfr-e.pdf Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
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Lieferzeit 10-14 Tag (e)
84+0.21 EUR
162+0.11 EUR
243+0.073 EUR
285+0.062 EUR
500+0.044 EUR
1000+0.039 EUR
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SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF1503 SDR03EZPF1503 Rohm Semiconductor sdr-e.pdf Description: RES 150K OHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
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63+0.28 EUR
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214+0.082 EUR
500+0.059 EUR
1000+0.052 EUR
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LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
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LTR10EZPJ510 LTR10EZPJ510 Rohm Semiconductor ltr-e.pdf Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 4900 Stücke:
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56+0.32 EUR
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161+0.11 EUR
189+0.093 EUR
500+0.067 EUR
1000+0.059 EUR
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2SA1038STPR Rohm Semiconductor Description: TRANS GP BJT PNP 120V 0.05A 3-PI
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SPT
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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BA7615N-BZ Rohm Semiconductor Description: IC VIDEO SIGNAL SWITCHER 10SIP
Packaging: Tube
Package / Case: 10-SIP
Mounting Type: Through Hole
Function: Switch
Voltage - Supply: 4.5V ~ 13V
Applications: Consumer Video
Supplier Device Package: 10-SIP
Part Status: Obsolete
Control Interface: Logic
Produkt ist nicht verfügbar
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R8008ANJFRGTL R8008ANJFRGTL Rohm Semiconductor datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 8A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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R8008ANJFRGTL R8008ANJFRGTL Rohm Semiconductor datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 800V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 970 Stücke:
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2+9.59 EUR
10+6.41 EUR
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SFR10EZPF1200 SFR10EZPF1200 Rohm Semiconductor sfr-e.pdf Description: RES 120 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
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SFR10EZPF1200 SFR10EZPF1200 Rohm Semiconductor sfr-e.pdf Description: RES 120 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
auf Bestellung 14615 Stücke:
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ESR01MZPF2201 ESR01MZPF2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
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ESR01MZPF2201 ESR01MZPF2201 Rohm Semiconductor esr-e.pdf Description: RES 2.2K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
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BU9795AFV-LBE2 BU9795AFV-LBE2 Rohm Semiconductor datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
auf Bestellung 4000 Stücke:
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BU9795AFV-LBE2 BU9795AFV-LBE2 Rohm Semiconductor datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Cut Tape (CT)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
auf Bestellung 5970 Stücke:
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BU97501KV-E2 BU97501KV-E2 Rohm Semiconductor datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
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BU97501KV-E2 BU97501KV-E2 Rohm Semiconductor datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
auf Bestellung 1905 Stücke:
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4+4.51 EUR
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25+3.82 EUR
100+3.31 EUR
250+3.14 EUR
500+2.82 EUR
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SFR10EZPF4701 SFR10EZPF4701 Rohm Semiconductor sfr-e.pdf Description: RES 4.7 KOHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
Produkt ist nicht verfügbar
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SFR10EZPF4701 SFR10EZPF4701 Rohm Semiconductor sfr-e.pdf Description: RES 4.7 KOHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
auf Bestellung 4980 Stücke:
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59+0.3 EUR
70+0.25 EUR
132+0.13 EUR
177+0.099 EUR
500+0.06 EUR
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ML610Q174-440GAZWAAL Rohm Semiconductor ML610Q174_8-31-18.pdf Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DTA114TE3TL DTA114TE3TL Rohm Semiconductor datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA114TE3TL DTA114TE3TL Rohm Semiconductor datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTA114YE3TL DTA114YE3TL Rohm Semiconductor dta114ye3-e.pdf Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA114YE3TL DTA114YE3TL Rohm Semiconductor dta114ye3-e.pdf Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
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42+0.42 EUR
69+0.26 EUR
110+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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DTA115EE3TL DTA115EE3TL Rohm Semiconductor datasheet?p=DTA115EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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DTA115EE3TL DTA115EE3TL Rohm Semiconductor datasheet?p=DTA115EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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70+0.25 EUR
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RSA5LAGTR RSA5LAGTR Rohm Semiconductor Description: TVS DIODE 5.8VWM 10.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 5.8V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
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2SC4617E3TLQ 2SC4617E3TLQ Rohm Semiconductor datasheet?p=2SC4617E3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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R6535ENZC17 datasheet?p=R6535ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6535ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 35A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.21mA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 300 Stücke:
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2+12.13 EUR
10+10.39 EUR
100+8.66 EUR
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R6530ENZC17 datasheet?p=R6530ENZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6530ENZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 30A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 960µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 300 Stücke:
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3+6.28 EUR
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120+5.03 EUR
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R6524KNZC17 datasheet?p=R6524KNZ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6524KNZC17
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 650V 24A TO3
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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2+11.21 EUR
10+10.08 EUR
100+8.26 EUR
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SCT4036KEC11 datasheet?p=SCT4036KE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEC11
Hersteller: Rohm Semiconductor
Description: 1200V, 36M, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
auf Bestellung 4654 Stücke:
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1+28.58 EUR
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SCT4026DEHRC11 datasheet?p=SCT4026DEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEHRC11
Hersteller: Rohm Semiconductor
Description: 750V, 56A, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
Grade: Automotive
Qualification: AEC-Q101
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1+30.92 EUR
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120+22.25 EUR
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SCT4036KEHRC11 datasheet?p=SCT4036KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4036KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 43A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 289 Stücke:
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SCT4026DEC11 datasheet?p=SCT4026DE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4026DEC11
Hersteller: Rohm Semiconductor
Description: 750V, 26M, 3-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
Power Dissipation (Max): 176W
Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
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1+30.11 EUR
30+22.86 EUR
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SCT4062KEHRC11 datasheet?p=SCT4062KEHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCT4062KEHRC11
Hersteller: Rohm Semiconductor
Description: 1200V, 26A, 3-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 115W
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Supplier Device Package: TO-247N
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 153 Stücke:
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1+19.5 EUR
10+17.13 EUR
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2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SAR552P5T100 datasheet?p=2SAR552P5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR552P5T100
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 3A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 500 mW
auf Bestellung 1534 Stücke:
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Anzahl Preis
20+0.88 EUR
24+0.74 EUR
100+0.52 EUR
500+0.4 EUR
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2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 2000 Stücke:
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Anzahl Preis
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 1000
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2SAR375P5T100R 2sar375p5t100q-e.pdf
2SAR375P5T100R
Hersteller: Rohm Semiconductor
Description: TRANS PNP 120V 1.5A MPT3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 200mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 3543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.1 EUR
100+0.72 EUR
500+0.56 EUR
Mindestbestellmenge: 10
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DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DTA123JE3HZGTL datasheet?p=DTA123JE3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA123JE3HZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 28
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DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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DTC115EUBTL datasheet?p=DTC115EUB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC115EUBTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
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ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Hersteller: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
Produkt ist nicht verfügbar
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ESR01MZPF1001 esr-e.pdf
ESR01MZPF1001
Hersteller: Rohm Semiconductor
Description: RES SMD 1K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 1 kOhms
auf Bestellung 9755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
34+0.53 EUR
64+0.28 EUR
100+0.21 EUR
500+0.12 EUR
1000+0.086 EUR
5000+0.072 EUR
Mindestbestellmenge: 29
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LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Hersteller: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Tape & Reel (TR)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
Produkt ist nicht verfügbar
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LTR50UZPFSR030 ltr-low-e.pdf
LTR50UZPFSR030
Hersteller: Rohm Semiconductor
Description: RES 0.03 OHM 1% 2W WIDE 2010
Packaging: Cut Tape (CT)
Power (Watts): 2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 2010 (5025 Metric), 1020
Temperature Coefficient: 0/ +200ppm/°C
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1020
Height - Seated (Max): 0.029" (0.73mm)
Part Status: Active
Resistance: 30 mOhms
auf Bestellung 4996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
12+1.48 EUR
50+1.24 EUR
100+1.07 EUR
500+0.76 EUR
1000+0.63 EUR
Mindestbestellmenge: 11
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RSA12LAGTR
RSA12LAGTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 12VWM 19.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Tape & Reel (TR)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
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PML10EZPJV1L0 pml-e.pdf
PML10EZPJV1L0
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 5% 0.66W 0508
Packaging: Cut Tape (CT)
Power (Watts): 0.66W
Tolerance: ±5%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Metal Element
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.017" (0.43mm)
Part Status: Active
Resistance: 1 mOhms
auf Bestellung 4105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
21+0.85 EUR
100+0.49 EUR
1000+0.28 EUR
2500+0.27 EUR
Mindestbestellmenge: 16
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PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
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PML10EZPGV1L00 pml-e.pdf
PML10EZPGV1L00
Hersteller: Rohm Semiconductor
Description: RES 0.001 OHM 2/3W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 0.667W, 2/3W
Tolerance: ±2%
Features: Automotive AEC-Q200, Current Sense
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.049" L x 0.079" W (1.25mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.028" (0.70mm)
Part Status: Active
Resistance: 1 mOhms
Produkt ist nicht verfügbar
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RGW00TS65HRC11 datasheet?p=RGW00TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW00TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.75 EUR
10+9.22 EUR
450+6.78 EUR
Mindestbestellmenge: 2
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RGWX5TS65HRC11 datasheet?p=RGWX5TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGWX5TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 132A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 337 Stücke:
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Anzahl Preis
3+7.36 EUR
10+4.87 EUR
Mindestbestellmenge: 3
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RGW80TS65HRC11 datasheet?p=RGW80TS65HR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RGW80TS65HRC11
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 80A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 410 Stücke:
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Anzahl Preis
4+5.84 EUR
10+3.83 EUR
Mindestbestellmenge: 4
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UFZVTE-175.1B datasheet?p=UFZV5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UFZVTE-175.1B
Hersteller: Rohm Semiconductor
Description: 500MW 5.1V, SOD-323FL, SMALL AND
Packaging: Cut Tape (CT)
Tolerance: ±2.55%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: UMD2
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
35+0.51 EUR
100+0.29 EUR
500+0.19 EUR
1000+0.15 EUR
Mindestbestellmenge: 26
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BR24T64FVT-WE2 datasheet?p=BR24T64FVT-W&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24T64FVT-WE2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
28+0.63 EUR
50+0.62 EUR
100+0.6 EUR
250+0.59 EUR
500+0.57 EUR
1000+0.56 EUR
Mindestbestellmenge: 26
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ML9213GPZ03A-M
Hersteller: Rohm Semiconductor
Description: IC DISPLAY DRIVER CONTROLLER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.03 EUR
Mindestbestellmenge: 5000
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SFR03EZPF1503 sfr-e.pdf
SFR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES SMD 150K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Anti-Sulfur, Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
162+0.11 EUR
243+0.073 EUR
285+0.062 EUR
500+0.044 EUR
1000+0.039 EUR
Mindestbestellmenge: 84
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SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Packaging: Tape & Reel (TR)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
Produkt ist nicht verfügbar
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SDR03EZPF1503 sdr-e.pdf
SDR03EZPF1503
Hersteller: Rohm Semiconductor
Description: RES 150K OHM 1% 0.3W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.3W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Part Status: Active
Resistance: 150 kOhms
auf Bestellung 4830 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
122+0.14 EUR
183+0.096 EUR
214+0.082 EUR
500+0.059 EUR
1000+0.052 EUR
Mindestbestellmenge: 63
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LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Hersteller: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
Produkt ist nicht verfügbar
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LTR10EZPJ510 ltr-e.pdf
LTR10EZPJ510
Hersteller: Rohm Semiconductor
Description: RES SMD 51 OHM 5% 1W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 51 Ohms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
108+0.16 EUR
161+0.11 EUR
189+0.093 EUR
500+0.067 EUR
1000+0.059 EUR
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2SA1038STPR
Hersteller: Rohm Semiconductor
Description: TRANS GP BJT PNP 120V 0.05A 3-PI
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SPT
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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BA7615N-BZ
Hersteller: Rohm Semiconductor
Description: IC VIDEO SIGNAL SWITCHER 10SIP
Packaging: Tube
Package / Case: 10-SIP
Mounting Type: Through Hole
Function: Switch
Voltage - Supply: 4.5V ~ 13V
Applications: Consumer Video
Supplier Device Package: 10-SIP
Part Status: Obsolete
Control Interface: Logic
Produkt ist nicht verfügbar
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R8008ANJFRGTL datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJFRGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 8A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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R8008ANJFRGTL datasheet?p=R8008ANJFRG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R8008ANJFRGTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 800V 8A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.59 EUR
10+6.41 EUR
100+4.61 EUR
500+3.85 EUR
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SFR10EZPF1200 sfr-e.pdf
SFR10EZPF1200
Hersteller: Rohm Semiconductor
Description: RES 120 OHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
auf Bestellung 10000 Stücke:
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Anzahl Preis
5000+0.042 EUR
10000+0.038 EUR
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SFR10EZPF1200 sfr-e.pdf
SFR10EZPF1200
Hersteller: Rohm Semiconductor
Description: RES 120 OHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 120 Ohms
auf Bestellung 14615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
118+0.15 EUR
175+0.1 EUR
205+0.086 EUR
500+0.062 EUR
1000+0.054 EUR
Mindestbestellmenge: 59
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ESR01MZPF2201 esr-e.pdf
ESR01MZPF2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 1% 1/5W 0402
Packaging: Tape & Reel (TR)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
Produkt ist nicht verfügbar
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ESR01MZPF2201 esr-e.pdf
ESR01MZPF2201
Hersteller: Rohm Semiconductor
Description: RES 2.2K OHM 1% 1/5W 0402
Packaging: Cut Tape (CT)
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Part Status: Active
Resistance: 2.2 kOhms
auf Bestellung 8686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
34+0.53 EUR
64+0.28 EUR
100+0.21 EUR
500+0.12 EUR
1000+0.086 EUR
5000+0.072 EUR
Mindestbestellmenge: 29
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BU9795AFV-LBE2 datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9795AFV-LBE2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Tape & Reel (TR)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
auf Bestellung 4000 Stücke:
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BU9795AFV-LBE2 datasheet?p=BU9795AFV-LB&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU9795AFV-LBE2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR 27X4COM IND 40SSOP
Packaging: Cut Tape (CT)
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: SPI
Configuration: 108 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Supplier Device Package: 40-SSOP-B
Part Status: Active
Current - Supply: 20 µA
auf Bestellung 5970 Stücke:
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BU97501KV-E2 datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BU97501KV-E2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+2.38 EUR
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BU97501KV-E2 datasheet?p=BU97501KV&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
BU97501KV-E2
Hersteller: Rohm Semiconductor
Description: IC LCD DVR MULTI 51X4COM 64VQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Display Type: LCD, LED
Mounting Type: Surface Mount
Interface: 3-Wire Serial
Configuration: 156 Segment, 204 Segment
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 64-VQFP (10x10)
Part Status: Active
Current - Supply: 2 µA
auf Bestellung 1905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+4.04 EUR
25+3.82 EUR
100+3.31 EUR
250+3.14 EUR
500+2.82 EUR
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SFR10EZPF4701 sfr-e.pdf
SFR10EZPF4701
Hersteller: Rohm Semiconductor
Description: RES 4.7 KOHM 1% 1/8W 0805
Packaging: Tape & Reel (TR)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
Produkt ist nicht verfügbar
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SFR10EZPF4701 sfr-e.pdf
SFR10EZPF4701
Hersteller: Rohm Semiconductor
Description: RES 4.7 KOHM 1% 1/8W 0805
Packaging: Cut Tape (CT)
Power (Watts): 0.125W, 1/8W
Tolerance: ±1%
Features: Anti-Sulfur
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Part Status: Active
Resistance: 4.7 kOhms
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
70+0.25 EUR
132+0.13 EUR
177+0.099 EUR
500+0.06 EUR
1000+0.042 EUR
Mindestbestellmenge: 59
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ML610Q174-440GAZWAAL ML610Q174_8-31-18.pdf
Hersteller: Rohm Semiconductor
Description: IC MCU 8BIT 128KB FLASH 80QFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8.4MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: nX-U8/100
Data Converters: A/D 12x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, SSP, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Last Time Buy
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DTA114TE3TL datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA114TE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
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DTA114TE3TL datasheet?p=DTA114TE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA114TE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
70+0.25 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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DTA114YE3TL dta114ye3-e.pdf
DTA114YE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA114YE3TL dta114ye3-e.pdf
DTA114YE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
69+0.26 EUR
110+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42
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DTA115EE3TL datasheet?p=DTA115EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA115EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTA115EE3TL datasheet?p=DTA115EE3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
DTA115EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
70+0.25 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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RSA5LAGTR
RSA5LAGTR
Hersteller: Rohm Semiconductor
Description: TVS DIODE 5.8VWM 10.5VC PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 5.8V (Max)
Supplier Device Package: PMDS
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC4617E3TLQ datasheet?p=2SC4617E3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
2SC4617E3TLQ
Hersteller: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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