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LTR100JZPJ9R1 LTR100JZPJ9R1 Rohm Semiconductor ltr-e.pdf Description: RES SMD 9.1 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 9.1 Ohms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.33 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ9R1 LTR100JZPJ9R1 Rohm Semiconductor ltr-e.pdf Description: RES SMD 9.1 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 9.1 Ohms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
24+0.88 EUR
50+0.63 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ910 LTR100JZPJ910 Rohm Semiconductor ltr-e.pdf Description: RES SMD 91 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
LTR100JZPJ910 LTR100JZPJ910 Rohm Semiconductor ltr-e.pdf Description: RES SMD 91 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.52 EUR
24+0.88 EUR
50+0.63 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ912 SFR01MZPJ912 Rohm Semiconductor sfr-e.pdf Description: RES 9.1K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.026 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ912 SFR01MZPJ912 Rohm Semiconductor sfr-e.pdf Description: RES 9.1K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ910 SFR01MZPJ910 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 91 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.026 EUR
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ910 SFR01MZPJ910 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 91 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ9R1 SFR03EZPJ9R1 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±400ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.03 EUR
10000+0.026 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ9R1 SFR03EZPJ9R1 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±400ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ912 SFR03EZPJ912 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ912 SFR03EZPJ912 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 kOhms
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ911 SFR03EZPJ911 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ911 SFR03EZPJ911 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ915 SFR03EZPJ915 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 MOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR03EZPJ915 SFR03EZPJ915 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 MOhms
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDR03EZPJ9R1 SDR03EZPJ9R1 Rohm Semiconductor sdr-e.pdf Description: RES 9.1 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.03 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDR03EZPJ9R1 SDR03EZPJ9R1 Rohm Semiconductor sdr-e.pdf Description: RES 9.1 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPJ913 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.054 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SDR10EZPJ913 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
53+0.39 EUR
101+0.21 EUR
136+0.15 EUR
500+0.094 EUR
1000+0.064 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ911 SFR01MZPJ911 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 Ohms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ911 SFR01MZPJ911 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 Ohms
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ914 SFR01MZPJ914 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SFR01MZPJ914 SFR01MZPJ914 Rohm Semiconductor sfr-e.pdf Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SH8KA2GZETB SH8KA2GZETB Rohm Semiconductor Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
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RBE1KA20ATR RBE1KA20ATR Rohm Semiconductor datasheet?p=RBE1KA20A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY TYPE, 20V, 1A, S
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: TUMD5
Current - Average Rectified (Io) (per Diode): 1A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
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RBE1KA20ATR RBE1KA20ATR Rohm Semiconductor datasheet?p=RBE1KA20A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: HIGH EFFICIENCY TYPE, 20V, 1A, S
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: TUMD5
Current - Average Rectified (Io) (per Diode): 1A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
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BV1HD045EFJ-CE2 BV1HD045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HD045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: AUTOMOTIVE 1CH 45 M HIGH-SIDE SW
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BV1HD045EFJ-CE2 BV1HD045EFJ-CE2 Rohm Semiconductor datasheet?p=BV1HD045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: AUTOMOTIVE 1CH 45 M HIGH-SIDE SW
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
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SH8JE5TB1 SH8JE5TB1 Rohm Semiconductor sh8je5tb1-e.pdf Description: MOSFET 2P-CH 100V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8JE5TB1 SH8JE5TB1 Rohm Semiconductor sh8je5tb1-e.pdf Description: MOSFET 2P-CH 100V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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BD7J101EFJ-LBE2 BD7J101EFJ-LBE2 Rohm Semiconductor bd7j101xxx-lb-e.pdf Description: LOW POWER ISOLATED FLYBACK CONVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Duty Cycle: 50%
Frequency - Switching: 400kHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 80V
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Voltage - Start Up: 5.2 V
Control Features: EN, Soft Start
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BD7J101EFJ-LBE2 BD7J101EFJ-LBE2 Rohm Semiconductor bd7j101xxx-lb-e.pdf Description: LOW POWER ISOLATED FLYBACK CONVE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Duty Cycle: 50%
Frequency - Switching: 400kHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 80V
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Voltage - Start Up: 5.2 V
Control Features: EN, Soft Start
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IMD6AT108 IMD6AT108 Rohm Semiconductor datasheet?p=IMD6A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 PNP Pre-Biased, 1 NPN
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMT6
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LTR100JZPJ164 LTR100JZPJ164 Rohm Semiconductor ltr-e.pdf Description: RES SMD 160K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 160 kOhms
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LTR100JZPJ164 LTR100JZPJ164 Rohm Semiconductor ltr-e.pdf Description: RES SMD 160K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 160 kOhms
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RS1E180BNTB RS1E180BNTB Rohm Semiconductor datasheet?p=RS1E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 60A 8-HSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
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RS1E180BNTB RS1E180BNTB Rohm Semiconductor datasheet?p=RS1E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 60A 8-HSOP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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ESR01MZPJ131 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 130 Ohms
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ESR01MZPJ131 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 130 Ohms
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ESR01MZPF1304 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 1.3 MOhms
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ESR01MZPF1304 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 1.3 MOhms
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DTA124EUBHZGTL DTA124EUBHZGTL Rohm Semiconductor datasheet?p=DTA124EUBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3F
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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DTA124EUBHZGTL DTA124EUBHZGTL Rohm Semiconductor datasheet?p=DTA124EUBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS PNP 0.1A UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3F
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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BU18JA2DG-CTR BU18JA2DG-CTR Rohm Semiconductor datasheet?p=BU18JA2DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.315V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
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BU18JA2DG-CTR BU18JA2DG-CTR Rohm Semiconductor datasheet?p=BU18JA2DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.315V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
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BM60212FV-EVK001 BM60212FV-EVK001 Rohm Semiconductor bm60212fv-evk001_ug-e.pdf Description: EVAL BOARD FOR BM60212
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: BM60212
Supplied Contents: Board(s)
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RB215T-60HZC9 RB215T-60HZC9 Rohm Semiconductor datasheet?p=RB215T-60HZ&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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CDZFHT2RA27B CDZFHT2RA27B Rohm Semiconductor Taping_VMND2_T2RA-e.pdf Description: DIODE ZENER 26.86V 100MW VMN2
Tolerance: ±2.49%
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 26.86 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: VMN2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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SCT3080ARC15 SCT3080ARC15 Rohm Semiconductor sct3080ar-e.pdf Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
auf Bestellung 427 Stücke:
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SCT3080ARHRC15 SCT3080ARHRC15 Rohm Semiconductor sct3080arhr-e.pdf Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Qualification: AEC-Q101
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KTR25JZPF3901 KTR25JZPF3901 Rohm Semiconductor ktr-e.pdf Description: RES SMD 3.9K OHM 1% 1/3W 1210
Power (Watts): 0.333W, 1/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.9 kOhms
auf Bestellung 7984 Stücke:
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1000+0.15 EUR
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RFNL5TJ6SFHGC9 RFNL5TJ6SFHGC9 Rohm Semiconductor datasheet?p=RFNL5TJ6SFHG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 5A TO220ACFP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
auf Bestellung 2742 Stücke:
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100+2.31 EUR
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1000+1.77 EUR
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RBR2LB60BTBR1 RBR2LB60BTBR1 Rohm Semiconductor rbr2lb60btbr1-e.pdf Description: DIODE SCHOTTKY 60V 2A SMBP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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RBR2LB60BTBR1 RBR2LB60BTBR1 Rohm Semiconductor rbr2lb60btbr1-e.pdf Description: DIODE SCHOTTKY 60V 2A SMBP
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 2756 Stücke:
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RBR3LB60BTBR1 RBR3LB60BTBR1 Rohm Semiconductor rbr3lb60btbr1-e.pdf Description: DIODE SCHOTTKY 60V 3A SMBP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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RBR3LB60BTBR1 RBR3LB60BTBR1 Rohm Semiconductor rbr3lb60btbr1-e.pdf Description: DIODE SCHOTTKY 60V 3A SMBP
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
auf Bestellung 2195 Stücke:
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10+2.2 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.63 EUR
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SCT3105KRC15 SCT3105KRC15 Rohm Semiconductor sct3105kr-e.pdf Description: 1200V, 24A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
auf Bestellung 356 Stücke:
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SCT3040KRC15 SCT3040KRC15 Rohm Semiconductor sct3040kr-e.pdf Description: 1200V, 55A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tj)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
auf Bestellung 288 Stücke:
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BV1LE250EFJ-CE2 BV1LE250EFJ-CE2 Rohm Semiconductor datasheet?p=BV1LE250EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: AUTOMOTIVE IPD, 1CH LOW SIDE SWI
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Produkt ist nicht verfügbar
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LTR100JZPJ9R1 ltr-e.pdf
LTR100JZPJ9R1
Hersteller: Rohm Semiconductor
Description: RES SMD 9.1 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 9.1 Ohms
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4000+0.33 EUR
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LTR100JZPJ9R1 ltr-e.pdf
LTR100JZPJ9R1
Hersteller: Rohm Semiconductor
Description: RES SMD 9.1 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 9.1 Ohms
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
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50+0.63 EUR
100+0.55 EUR
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LTR100JZPJ910 ltr-e.pdf
LTR100JZPJ910
Hersteller: Rohm Semiconductor
Description: RES SMD 91 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
Produkt ist nicht verfügbar
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LTR100JZPJ910 ltr-e.pdf
LTR100JZPJ910
Hersteller: Rohm Semiconductor
Description: RES SMD 91 OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 91 Ohms
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
24+0.88 EUR
50+0.63 EUR
100+0.55 EUR
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SFR01MZPJ912 sfr-e.pdf
SFR01MZPJ912
Hersteller: Rohm Semiconductor
Description: RES 9.1K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 kOhms
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10000+0.026 EUR
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SFR01MZPJ912 sfr-e.pdf
SFR01MZPJ912
Hersteller: Rohm Semiconductor
Description: RES 9.1K OHM 5% 1/16W 0402
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 9.1 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SFR01MZPJ910 sfr-e.pdf
SFR01MZPJ910
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 91 Ohms
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10000+0.026 EUR
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SFR01MZPJ910 sfr-e.pdf
SFR01MZPJ910
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS:
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 91 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SFR03EZPJ9R1 sfr-e.pdf
SFR03EZPJ9R1
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±400ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
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AnzahlPrivatkunde
5000+0.03 EUR
10000+0.026 EUR
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SFR03EZPJ9R1 sfr-e.pdf
SFR03EZPJ9R1
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±400ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
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SFR03EZPJ912 sfr-e.pdf
SFR03EZPJ912
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 kOhms
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.03 EUR
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SFR03EZPJ912 sfr-e.pdf
SFR03EZPJ912
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 kOhms
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
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SFR03EZPJ911 sfr-e.pdf
SFR03EZPJ911
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.03 EUR
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SFR03EZPJ911 sfr-e.pdf
SFR03EZPJ911
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 910 Ohms
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
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SFR03EZPJ915 sfr-e.pdf
SFR03EZPJ915
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 MOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.03 EUR
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SFR03EZPJ915 sfr-e.pdf
SFR03EZPJ915
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.1W, 1/10W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 MOhms
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
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SDR03EZPJ9R1 sdr-e.pdf
SDR03EZPJ9R1
Hersteller: Rohm Semiconductor
Description: RES 9.1 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.03 EUR
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SDR03EZPJ9R1 sdr-e.pdf
SDR03EZPJ9R1
Hersteller: Rohm Semiconductor
Description: RES 9.1 OHM 5% 0.3W 0603
Power (Watts): 0.3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 9.1 Ohms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
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SDR10EZPJ913 sdr-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.054 EUR
Mindestbestellmenge: 5000 Stücke
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SDR10EZPJ913 sdr-e.pdf
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Power (Watts): 0.5W, 1/2W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 91 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
53+0.39 EUR
101+0.21 EUR
136+0.15 EUR
500+0.094 EUR
1000+0.064 EUR
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SFR01MZPJ911 sfr-e.pdf
SFR01MZPJ911
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 Ohms
Produkt ist nicht verfügbar
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SFR01MZPJ911 sfr-e.pdf
SFR01MZPJ911
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 Ohms
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SFR01MZPJ914 sfr-e.pdf
SFR01MZPJ914
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SFR01MZPJ914 sfr-e.pdf
SFR01MZPJ914
Hersteller: Rohm Semiconductor
Description: SULFUR TOLERANT CHIP RESISTORS
Power (Watts): 0.063W, 1/16W
Tolerance: ±5%
Features: Anti-Sulfur, Automotive AEC-Q200
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 910 kOhms
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
182+0.12 EUR
278+0.075 EUR
328+0.064 EUR
500+0.045 EUR
1000+0.039 EUR
5000+0.03 EUR
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SH8KA2GZETB
SH8KA2GZETB
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.13 EUR
Mindestbestellmenge: 2500 Stücke
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RBE1KA20ATR datasheet?p=RBE1KA20A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBE1KA20ATR
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 1A, S
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: TUMD5
Current - Average Rectified (Io) (per Diode): 1A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.43 EUR
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RBE1KA20ATR datasheet?p=RBE1KA20A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RBE1KA20ATR
Hersteller: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 1A, S
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C
Supplier Device Package: TUMD5
Current - Average Rectified (Io) (per Diode): 1A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
20+1.09 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.48 EUR
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BV1HD045EFJ-CE2 datasheet?p=BV1HD045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HD045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE 1CH 45 M HIGH-SIDE SW
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.2 EUR
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BV1HD045EFJ-CE2 datasheet?p=BV1HD045EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1HD045EFJ-CE2
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE 1CH 45 M HIGH-SIDE SW
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): 7V
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4298 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
12+1.78 EUR
25+1.62 EUR
100+1.44 EUR
250+1.34 EUR
500+1.3 EUR
1000+1.27 EUR
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SH8JE5TB1 sh8je5tb1-e.pdf
SH8JE5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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SH8JE5TB1 sh8je5tb1-e.pdf
SH8JE5TB1
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 100V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.89 EUR
10+3.82 EUR
100+2.64 EUR
500+2.13 EUR
1000+2.06 EUR
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BD7J101EFJ-LBE2 bd7j101xxx-lb-e.pdf
BD7J101EFJ-LBE2
Hersteller: Rohm Semiconductor
Description: LOW POWER ISOLATED FLYBACK CONVE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Duty Cycle: 50%
Frequency - Switching: 400kHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 80V
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Voltage - Start Up: 5.2 V
Control Features: EN, Soft Start
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.88 EUR
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BD7J101EFJ-LBE2 bd7j101xxx-lb-e.pdf
BD7J101EFJ-LBE2
Hersteller: Rohm Semiconductor
Description: LOW POWER ISOLATED FLYBACK CONVE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Duty Cycle: 50%
Frequency - Switching: 400kHz
Internal Switch(s): Yes
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 80V
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Voltage - Start Up: 5.2 V
Control Features: EN, Soft Start
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.72 EUR
10+8.73 EUR
25+8.26 EUR
100+7.15 EUR
250+6.78 EUR
500+6.09 EUR
1000+5.14 EUR
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IMD6AT108 datasheet?p=IMD6A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMD6AT108
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 PNP Pre-Biased, 1 NPN
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMT6
Produkt ist nicht verfügbar
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LTR100JZPJ164 ltr-e.pdf
LTR100JZPJ164
Hersteller: Rohm Semiconductor
Description: RES SMD 160K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 160 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.33 EUR
Mindestbestellmenge: 4000 Stücke
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LTR100JZPJ164 ltr-e.pdf
LTR100JZPJ164
Hersteller: Rohm Semiconductor
Description: RES SMD 160K OHM 5% 3W 2512 WIDE
Power (Watts): 3W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: Wide 2512 (6432 Metric), 1225
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.126" L x 0.252" W (3.20mm x 6.40mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1225
Height - Seated (Max): 0.028" (0.70mm)
Resistance: 160 kOhms
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
24+0.87 EUR
50+0.63 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
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RS1E180BNTB datasheet?p=RS1E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E180BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 60A 8-HSOP
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
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RS1E180BNTB datasheet?p=RS1E180BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RS1E180BNTB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 60A 8-HSOP
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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ESR01MZPJ131 esr-e.pdf
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 130 Ohms
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ESR01MZPJ131 esr-e.pdf
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±5%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±200ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 130 Ohms
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ESR01MZPF1304 esr-e.pdf
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 1.3 MOhms
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ESR01MZPF1304 esr-e.pdf
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS: ROHM'
Power (Watts): 0.2W, 1/5W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Packaging: Cut Tape (CT)
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0402
Height - Seated (Max): 0.016" (0.40mm)
Resistance: 1.3 MOhms
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DTA124EUBHZGTL datasheet?p=DTA124EUBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EUBHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3F
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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DTA124EUBHZGTL datasheet?p=DTA124EUBHZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTA124EUBHZGTL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS PNP 0.1A UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3F
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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BU18JA2DG-CTR datasheet?p=BU18JA2DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU18JA2DG-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.315V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
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BU18JA2DG-CTR datasheet?p=BU18JA2DG-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU18JA2DG-CTR
Hersteller: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (1kHz)
Voltage Dropout (Max): 0.315V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Qualification: AEC-Q100
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BM60212FV-EVK001 bm60212fv-evk001_ug-e.pdf
BM60212FV-EVK001
Hersteller: Rohm Semiconductor
Description: EVAL BOARD FOR BM60212
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: BM60212
Supplied Contents: Board(s)
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RB215T-60HZC9 datasheet?p=RB215T-60HZ&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
RB215T-60HZC9
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO220FN
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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CDZFHT2RA27B Taping_VMND2_T2RA-e.pdf
CDZFHT2RA27B
Hersteller: Rohm Semiconductor
Description: DIODE ZENER 26.86V 100MW VMN2
Tolerance: ±2.49%
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 26.86 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: VMN2
Power - Max: 100 mW
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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SCT3080ARC15 sct3080ar-e.pdf
SCT3080ARC15
Hersteller: Rohm Semiconductor
Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
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SCT3080ARHRC15 sct3080arhr-e.pdf
SCT3080ARHRC15
Hersteller: Rohm Semiconductor
Description: 650V, 30A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 5mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 571 pF @ 500 V
Qualification: AEC-Q101
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KTR25JZPF3901 ktr-e.pdf
KTR25JZPF3901
Hersteller: Rohm Semiconductor
Description: RES SMD 3.9K OHM 1% 1/3W 1210
Power (Watts): 0.333W, 1/3W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Packaging: Cut Tape (CT)
Package / Case: 1210 (3225 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1210
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.9 kOhms
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RFNL5TJ6SFHGC9 datasheet?p=RFNL5TJ6SFHG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFNL5TJ6SFHGC9
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO220ACFP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220ACFP
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 130 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
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RBR2LB60BTBR1 rbr2lb60btbr1-e.pdf
RBR2LB60BTBR1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A SMBP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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RBR2LB60BTBR1 rbr2lb60btbr1-e.pdf
RBR2LB60BTBR1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 2A SMBP
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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RBR3LB60BTBR1 rbr3lb60btbr1-e.pdf
RBR3LB60BTBR1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A SMBP
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Produkt ist nicht verfügbar
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RBR3LB60BTBR1 rbr3lb60btbr1-e.pdf
RBR3LB60BTBR1
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 3A SMBP
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMBP
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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SCT3105KRC15 sct3105kr-e.pdf
SCT3105KRC15
Hersteller: Rohm Semiconductor
Description: 1200V, 24A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
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SCT3040KRC15 sct3040kr-e.pdf
SCT3040KRC15
Hersteller: Rohm Semiconductor
Description: 1200V, 55A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tj)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
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BV1LE250EFJ-CE2 datasheet?p=BV1LE250EFJ-C&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BV1LE250EFJ-CE2
Hersteller: Rohm Semiconductor
Description: AUTOMOTIVE IPD, 1CH LOW SIDE SWI
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-HTSOP-J
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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