Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (102342) > Seite 992 nach 1706
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LMR931G-GTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 85µA Slew Rate: 0.42V/µs Gain Bandwidth Product: 1.4 MHz Current - Input Bias: 5 nA Voltage - Input Offset: 1 mV Supplier Device Package: 5-SSOP Number of Circuits: 1 Current - Output / Channel: 9 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
Produkt ist nicht verfügbar |
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BD94130EFV-ME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 54-VSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 24 Type: Linear Operating Temperature: -40°C ~ 125°C Applications: Backlight Current - Output / Channel: 80mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: 54-HTSSOP-B Dimming: PWM, SPI Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BD94130EFV-ME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 54-VSSOP (0.295", 7.50mm Width) Exposed Pad Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 24 Type: Linear Operating Temperature: -40°C ~ 125°C Applications: Backlight Current - Output / Channel: 80mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: 54-HTSSOP-B Dimming: PWM, SPI Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2093 Stücke: Lieferzeit 10-14 Tag (e) |
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LTR10EZPF1R50 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 0805 (2012 Metric), 0508 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0508 Height - Seated (Max): 0.026" (0.65mm) Resistance: 1.5 Ohms |
Produkt ist nicht verfügbar |
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LTR10EZPF1R50 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 1W Tolerance: ±1% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: Wide 0805 (2012 Metric), 0508 Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Number of Terminations: 2 Supplier Device Package: 0508 Height - Seated (Max): 0.026" (0.65mm) Resistance: 1.5 Ohms |
auf Bestellung 4940 Stücke: Lieferzeit 10-14 Tag (e) |
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BD91407GW-E2 | Rohm Semiconductor |
Description: IC POWER MANAGEMENT Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BA41W12ST | Rohm Semiconductor |
Description: IC POWER MANAGEMENT SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BA41W12ST-V5 | Rohm Semiconductor |
Description: IC POWER MANAGEMENT SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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SCT3030ARC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V |
auf Bestellung 361 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3030ARHRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT3040KRHRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 262W Vgs(th) (Max) @ Id: 5.6V @ 10mA Supplier Device Package: TO-247-4L Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 435 Stücke: Lieferzeit 10-14 Tag (e) |
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SCT4018KRC15 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V Power Dissipation (Max): 312W Vgs(th) (Max) @ Id: 4.8V @ 22.2mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V |
auf Bestellung 4444 Stücke: Lieferzeit 10-14 Tag (e) |
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BD8693FJ | Rohm Semiconductor |
Description: IC POWER MANAGEMENT Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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RGT16NS65DGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
Produkt ist nicht verfügbar |
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RBS2LAM40CTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: PMDTM Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A Current - Reverse Leakage @ Vr: 800 µA @ 20 V |
auf Bestellung 30371 Stücke: Lieferzeit 10-14 Tag (e) |
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BD26503KS2 | Rohm Semiconductor |
Description: IC POWER MANAGEMENT SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BD26503KS2-E2 | Rohm Semiconductor |
Description: IC POWER MANAGEMENT SMD Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BD77502FVM | Rohm Semiconductor |
![]() Packaging: Bulk Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 2.6mA Slew Rate: 10V/µs Gain Bandwidth Product: 8 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: 8-MSOP Number of Circuits: 2 Current - Output / Channel: 7.5 mA Voltage - Supply Span (Min): 7 V Voltage - Supply Span (Max): 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BR24T512FVT-3AME2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BR24T512FVT-3AME2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP-B Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 64K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 8102 Stücke: Lieferzeit 10-14 Tag (e) |
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R6086YNZC17 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 6V @ 4.6mA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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R6004END4TL1 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Power Dissipation (Max): 9.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
Produkt ist nicht verfügbar |
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R6004END4TL1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Power Dissipation (Max): 9.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 3869 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR10EZPD3601 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.4W, 2/5W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 3.6 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR10EZPD3601 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.4W, 2/5W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 3.6 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR18EZPD3601 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.5W, 1/2W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 3.6 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR18EZPD3601 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.5W, 1/2W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 3.6 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR03EZPD3602 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 36 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR03EZPD3602 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.25W, 1/4W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 36 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR03EZPD3601 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 3.6 kOhms |
Produkt ist nicht verfügbar |
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ESR03EZPD3601 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.25W, 1/4W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0603 (1608 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0603 Height - Seated (Max): 0.022" (0.55mm) Resistance: 3.6 kOhms |
auf Bestellung 4994 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR502E3TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 520MHz Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR502E3TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 520MHz Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SAR502E3HZGTL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 520MHz Supplier Device Package: EMT3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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2SAR502E3HZGTL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA Current - Collector Cutoff (Max): 200nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 520MHz Supplier Device Package: EMT3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 150 mW Qualification: AEC-Q101 |
auf Bestellung 2941 Stücke: Lieferzeit 10-14 Tag (e) |
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BD14215FVJ-LAE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C Current - Supply: 310µA Current - Input Bias: 1 µA Voltage - Input Offset: 600 µV Supplier Device Package: 8-TSSOP-BJ Number of Circuits: 2 Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BD14215FVJ-LAE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 125°C Current - Supply: 310µA Current - Input Bias: 1 µA Voltage - Input Offset: 600 µV Supplier Device Package: 8-TSSOP-BJ Number of Circuits: 2 Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 2484 Stücke: Lieferzeit 10-14 Tag (e) |
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BD39042MUF-CE2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Output: Open Drain or Open Collector Type: Watchdog Circuit Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 4 Reset Timeout: 9ms Minimum Voltage - Threshold: 2.5V, 2.55V Supplier Device Package: VQFN16FV3030 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD39042MUF-CE2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Output: Open Drain or Open Collector Type: Watchdog Circuit Reset: Active High Operating Temperature: -40°C ~ 125°C (TA) Number of Voltages Monitored: 4 Reset Timeout: 9ms Minimum Voltage - Threshold: 2.5V, 2.55V Supplier Device Package: VQFN16FV3030 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD7003NUX-E2 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: VSON008X2020 Voltage - Output (Max): 3.3V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 66dB (100Hz) Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
BR25L640F-W | Rohm Semiconductor |
Description: IC POWER MANAGEMENT Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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RB168MM150TFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RB168MM150TFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 4 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 8718 Stücke: Lieferzeit 10-14 Tag (e) |
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RB168VWM150TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB168VWM150TR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 2936 Stücke: Lieferzeit 10-14 Tag (e) |
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RB168VWM150TFTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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RB168VWM150TFTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDE Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 2645 Stücke: Lieferzeit 10-14 Tag (e) |
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R6049YNZ4C13 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V Power Dissipation (Max): 448W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: TO-247G Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V |
auf Bestellung 590 Stücke: Lieferzeit 10-14 Tag (e) |
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R6049YNX3C16 | Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V Power Dissipation (Max): 448W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD543XE3TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD543XE3TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD523YE3TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD523YE3TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD543EE3TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DTD543EE3TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 2922 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD513ZE3TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DTD513ZE3TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 2587 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR10EZPD3302 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.4W, 2/5W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 33 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESR10EZPD3302 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Power (Watts): 0.4W, 2/5W Tolerance: ±0.5% Features: Automotive AEC-Q200, Pulse Withstanding Package / Case: 0805 (2012 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 0805 Height - Seated (Max): 0.026" (0.65mm) Resistance: 33 kOhms |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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KTR18EZPF6044 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Power (Watts): 0.25W, 1/4W Tolerance: ±1% Features: Automotive AEC-Q200, High Voltage Package / Case: 1206 (3216 Metric) Temperature Coefficient: ±100ppm/°C Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Composition: Thick Film Operating Temperature: -55°C ~ 155°C Ratings: AEC-Q200 Number of Terminations: 2 Supplier Device Package: 1206 Height - Seated (Max): 0.026" (0.65mm) Resistance: 6.04 MOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
LMR931G-GTR |
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Hersteller: Rohm Semiconductor
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 85µA
Slew Rate: 0.42V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 9 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC OPAMP GP 1 CIRCUIT 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 85µA
Slew Rate: 0.42V/µs
Gain Bandwidth Product: 1.4 MHz
Current - Input Bias: 5 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 5-SSOP
Number of Circuits: 1
Current - Output / Channel: 9 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD94130EFV-ME2 |
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Hersteller: Rohm Semiconductor
Description: 24-CHANNEL CONSTANT CURRENT DRIV
Packaging: Tape & Reel (TR)
Package / Case: 54-VSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 125°C
Applications: Backlight
Current - Output / Channel: 80mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 54-HTSSOP-B
Dimming: PWM, SPI
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
Description: 24-CHANNEL CONSTANT CURRENT DRIV
Packaging: Tape & Reel (TR)
Package / Case: 54-VSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 125°C
Applications: Backlight
Current - Output / Channel: 80mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 54-HTSSOP-B
Dimming: PWM, SPI
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD94130EFV-ME2 |
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Hersteller: Rohm Semiconductor
Description: 24-CHANNEL CONSTANT CURRENT DRIV
Packaging: Cut Tape (CT)
Package / Case: 54-VSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 125°C
Applications: Backlight
Current - Output / Channel: 80mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 54-HTSSOP-B
Dimming: PWM, SPI
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
Description: 24-CHANNEL CONSTANT CURRENT DRIV
Packaging: Cut Tape (CT)
Package / Case: 54-VSSOP (0.295", 7.50mm Width) Exposed Pad
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 125°C
Applications: Backlight
Current - Output / Channel: 80mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: 54-HTSSOP-B
Dimming: PWM, SPI
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.87 EUR |
10+ | 12.91 EUR |
25+ | 11.35 EUR |
100+ | 9.59 EUR |
250+ | 8.99 EUR |
LTR10EZPF1R50 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 1.5 OHM 1% 1W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 Ohms
Description: RES SMD 1.5 OHM 1% 1W 0805 WIDE
Packaging: Tape & Reel (TR)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 Ohms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
LTR10EZPF1R50 |
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Hersteller: Rohm Semiconductor
Description: RES SMD 1.5 OHM 1% 1W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 Ohms
Description: RES SMD 1.5 OHM 1% 1W 0805 WIDE
Packaging: Cut Tape (CT)
Power (Watts): 1W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: Wide 0805 (2012 Metric), 0508
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Number of Terminations: 2
Supplier Device Package: 0508
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 1.5 Ohms
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 0.51 EUR |
64+ | 0.28 EUR |
94+ | 0.19 EUR |
109+ | 0.16 EUR |
500+ | 0.12 EUR |
1000+ | 0.11 EUR |
SCT3030ARC15 |
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Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
auf Bestellung 361 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 32.81 EUR |
10+ | 29.17 EUR |
SCT3030ARHRC15 |
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Hersteller: Rohm Semiconductor
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Qualification: AEC-Q101
Description: 650V, 70A, 4-PIN THD, TRENCH-STR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 33.81 EUR |
10+ | 30.05 EUR |
SCT3040KRHRC15 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 55A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Qualification: AEC-Q101
Description: 1200V, 55A, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
Power Dissipation (Max): 262W
Vgs(th) (Max) @ Id: 5.6V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 26.42 EUR |
10+ | 18.67 EUR |
100+ | 14.30 EUR |
SCT4018KRC15 |
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Hersteller: Rohm Semiconductor
Description: 1200V, 18M, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
Description: 1200V, 18M, 4-PIN THD, TRENCH-ST
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
Power Dissipation (Max): 312W
Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
auf Bestellung 4444 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 57.57 EUR |
30+ | 45.72 EUR |
RGT16NS65DGTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FIELD 650V 16A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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RBS2LAM40CTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 µA @ 20 V
Description: DIODE SCHOTTKY 20V 2A PMDTM
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: PMDTM
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 2 A
Current - Reverse Leakage @ Vr: 800 µA @ 20 V
auf Bestellung 30371 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 0.99 EUR |
28+ | 0.64 EUR |
100+ | 0.46 EUR |
500+ | 0.35 EUR |
1000+ | 0.31 EUR |
BD77502FVM |
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Hersteller: Rohm Semiconductor
Description: HIGH POWER CHIP IR LED, SIDE VIE
Packaging: Bulk
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.6mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 8 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 7.5 mA
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 15 V
Description: HIGH POWER CHIP IR LED, SIDE VIE
Packaging: Bulk
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.6mA
Slew Rate: 10V/µs
Gain Bandwidth Product: 8 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 7.5 mA
Voltage - Supply Span (Min): 7 V
Voltage - Supply Span (Max): 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BR24T512FVT-3AME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BR24T512FVT-3AME2 |
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Hersteller: Rohm Semiconductor
Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 512KBIT I2C 8TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP-B
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8102 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.19 EUR |
10+ | 2.83 EUR |
25+ | 2.70 EUR |
50+ | 2.60 EUR |
100+ | 2.51 EUR |
250+ | 2.39 EUR |
500+ | 2.31 EUR |
1000+ | 2.23 EUR |
R6086YNZC17 |
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Hersteller: Rohm Semiconductor
Description: NCH 600V 33A, TO-3PF, POWER MOSF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
Description: NCH 600V 33A, TO-3PF, POWER MOSF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 17A, 12V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 100 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 30.10 EUR |
10+ | 26.50 EUR |
100+ | 22.92 EUR |
R6004END4TL1 |
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Hersteller: Rohm Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6004END4TL1 |
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Hersteller: Rohm Semiconductor
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Description: 600V 2.4A SOT-223-3, LOW-NOISE P
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Power Dissipation (Max): 9.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 3869 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.02 EUR |
13+ | 1.37 EUR |
100+ | 1.04 EUR |
500+ | 0.82 EUR |
1000+ | 0.74 EUR |
2000+ | 0.68 EUR |
ESR10EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.06 EUR |
ESR10EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 0.39 EUR |
89+ | 0.20 EUR |
129+ | 0.14 EUR |
150+ | 0.12 EUR |
500+ | 0.09 EUR |
1000+ | 0.08 EUR |
ESR18EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: RES 3.6K OHM 0.5% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
Description: RES 3.6K OHM 0.5% 1/2W 1206
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.08 EUR |
ESR18EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: RES 3.6K OHM 0.5% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
Description: RES 3.6K OHM 0.5% 1/2W 1206
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
70+ | 0.25 EUR |
102+ | 0.17 EUR |
118+ | 0.15 EUR |
500+ | 0.11 EUR |
1000+ | 0.10 EUR |
ESR03EZPD3602 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.05 EUR |
ESR03EZPD3602 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 0.33 EUR |
99+ | 0.18 EUR |
143+ | 0.12 EUR |
166+ | 0.11 EUR |
500+ | 0.08 EUR |
1000+ | 0.07 EUR |
ESR03EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ESR03EZPD3601 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 0.33 EUR |
99+ | 0.18 EUR |
143+ | 0.12 EUR |
166+ | 0.11 EUR |
500+ | 0.08 EUR |
1000+ | 0.07 EUR |
2SAR502E3TL |
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Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
2SAR502E3TL |
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Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.63 EUR |
41+ | 0.43 EUR |
100+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
2SAR502E3HZGTL |
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Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SAR502E3HZGTL |
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Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2941 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
28+ | 0.65 EUR |
35+ | 0.51 EUR |
100+ | 0.31 EUR |
500+ | 0.28 EUR |
1000+ | 0.19 EUR |
BD14215FVJ-LAE2 |
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Hersteller: Rohm Semiconductor
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD14215FVJ-LAE2 |
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Hersteller: Rohm Semiconductor
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.68 EUR |
10+ | 2.30 EUR |
25+ | 1.94 EUR |
100+ | 1.53 EUR |
250+ | 1.33 EUR |
500+ | 1.21 EUR |
1000+ | 1.10 EUR |
BD39042MUF-CE2 |
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Hersteller: Rohm Semiconductor
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.05 EUR |
BD39042MUF-CE2 |
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Hersteller: Rohm Semiconductor
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.91 EUR |
10+ | 3.88 EUR |
25+ | 3.35 EUR |
100+ | 2.76 EUR |
250+ | 2.47 EUR |
500+ | 2.29 EUR |
1000+ | 2.14 EUR |
BD7003NUX-E2 |
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Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB168MM150TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.20 EUR |
RB168MM150TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 8718 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.76 EUR |
30+ | 0.59 EUR |
100+ | 0.35 EUR |
500+ | 0.33 EUR |
1000+ | 0.22 EUR |
RB168VWM150TR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB168VWM150TR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2936 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.74 EUR |
28+ | 0.63 EUR |
100+ | 0.44 EUR |
500+ | 0.34 EUR |
1000+ | 0.28 EUR |
RB168VWM150TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RB168VWM150TFTR |
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Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.88 EUR |
24+ | 0.76 EUR |
100+ | 0.53 EUR |
500+ | 0.41 EUR |
1000+ | 0.33 EUR |
R6049YNZ4C13 |
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Hersteller: Rohm Semiconductor
Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.04 EUR |
10+ | 8.72 EUR |
30+ | 7.40 EUR |
120+ | 6.18 EUR |
270+ | 5.65 EUR |
510+ | 5.47 EUR |
R6049YNX3C16 |
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Hersteller: Rohm Semiconductor
Description: NCH 600V 49A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
Description: NCH 600V 49A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.37 EUR |
10+ | 4.77 EUR |
50+ | 3.67 EUR |
100+ | 3.32 EUR |
250+ | 2.95 EUR |
500+ | 2.71 EUR |
DTD543XE3TL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.09 EUR |
DTD543XE3TL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.90 EUR |
32+ | 0.55 EUR |
100+ | 0.35 EUR |
500+ | 0.26 EUR |
1000+ | 0.24 EUR |
DTD523YE3TL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.09 EUR |
DTD523YE3TL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.90 EUR |
32+ | 0.56 EUR |
100+ | 0.36 EUR |
500+ | 0.27 EUR |
1000+ | 0.24 EUR |
DTD543EE3TL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTD543EE3TL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.90 EUR |
32+ | 0.55 EUR |
100+ | 0.35 EUR |
500+ | 0.26 EUR |
1000+ | 0.24 EUR |
DTD513ZE3TL |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DTD513ZE3TL |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2587 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.90 EUR |
32+ | 0.55 EUR |
100+ | 0.35 EUR |
500+ | 0.26 EUR |
1000+ | 0.24 EUR |
ESR10EZPD3302 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.06 EUR |
ESR10EZPD3302 |
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Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
46+ | 0.39 EUR |
89+ | 0.20 EUR |
129+ | 0.14 EUR |
150+ | 0.12 EUR |
500+ | 0.09 EUR |
1000+ | 0.08 EUR |
KTR18EZPF6044 |
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Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH