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ESR03EZPD3602 ESR03EZPD3602 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
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ESR03EZPD3602 ESR03EZPD3602 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
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ESR03EZPD3601 ESR03EZPD3601 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Produkt ist nicht verfügbar
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ESR03EZPD3601 ESR03EZPD3601 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
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2SAR502E3TL 2SAR502E3TL Rohm Semiconductor 2sar502e3-e.pdf Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
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2SAR502E3TL 2SAR502E3TL Rohm Semiconductor 2sar502e3-e.pdf Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
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2SAR502E3HZGTL 2SAR502E3HZGTL Rohm Semiconductor datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
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2SAR502E3HZGTL 2SAR502E3HZGTL Rohm Semiconductor datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
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BD14215FVJ-LAE2 BD14215FVJ-LAE2 Rohm Semiconductor datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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BD14215FVJ-LAE2 BD14215FVJ-LAE2 Rohm Semiconductor datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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BD39042MUF-CE2 BD39042MUF-CE2 Rohm Semiconductor datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
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BD39042MUF-CE2 BD39042MUF-CE2 Rohm Semiconductor datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
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BD7003NUX-E2 BD7003NUX-E2 Rohm Semiconductor ul94_bd7003nux-e2-e.pdf Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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BR25L640F-W Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB168MM150TFTR RB168MM150TFTR Rohm Semiconductor datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
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RB168MM150TFTR RB168MM150TFTR Rohm Semiconductor datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
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RB168VWM150TR RB168VWM150TR Rohm Semiconductor datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB168VWM150TR RB168VWM150TR Rohm Semiconductor datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB168VWM150TFTR RB168VWM150TFTR Rohm Semiconductor datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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RB168VWM150TFTR RB168VWM150TFTR Rohm Semiconductor datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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R6049YNZ4C13 R6049YNZ4C13 Rohm Semiconductor datasheet?p=R6049YNZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
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R6049YNX3C16 R6049YNX3C16 Rohm Semiconductor datasheet?p=R6049YNX3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 600V 49A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
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DTD543XE3TL DTD543XE3TL Rohm Semiconductor datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTD543XE3TL DTD543XE3TL Rohm Semiconductor datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTD523YE3TL DTD523YE3TL Rohm Semiconductor datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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3000+0.09 EUR
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DTD523YE3TL DTD523YE3TL Rohm Semiconductor datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD543EE3TL DTD543EE3TL Rohm Semiconductor datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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DTD543EE3TL DTD543EE3TL Rohm Semiconductor datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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DTD513ZE3TL DTD513ZE3TL Rohm Semiconductor datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD513ZE3TL DTD513ZE3TL Rohm Semiconductor datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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ESR10EZPD3302 ESR10EZPD3302 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
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ESR10EZPD3302 ESR10EZPD3302 Rohm Semiconductor esr-e.pdf Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
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KTR18EZPF6044 KTR18EZPF6044 Rohm Semiconductor ktr-e.pdf Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
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KTR18EZPF6044 KTR18EZPF6044 Rohm Semiconductor ktr-e.pdf Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
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RCJ200N20TL RCJ200N20TL Rohm Semiconductor datasheet?p=RCJ200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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BD6208AFS-E2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
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BD6208AFS-BZE2 Rohm Semiconductor Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
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BR24A64F-WLBH2 BR24A64F-WLBH2 Rohm Semiconductor datasheet?p=BR24A64F-WLB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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BR24A64F-WLBH2 BR24A64F-WLBH2 Rohm Semiconductor datasheet?p=BR24A64F-WLB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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BD9E301UEFJ-LBH2 BD9E301UEFJ-LBH2 Rohm Semiconductor bd9e301efj-lb-e.pdf Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9E301UEFJ-LBH2 BD9E301UEFJ-LBH2 Rohm Semiconductor bd9e301efj-lb-e.pdf Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9E300UEFJ-LBH2 BD9E300UEFJ-LBH2 Rohm Semiconductor bd9e300efj-lb-e.pdf Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9E300UEFJ-LBH2 BD9E300UEFJ-LBH2 Rohm Semiconductor bd9e300efj-lb-e.pdf Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9E303UEFJ-LBH2 BD9E303UEFJ-LBH2 Rohm Semiconductor bd9e303efj-lb-e.pdf Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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BD9E303UEFJ-LBH2 BD9E303UEFJ-LBH2 Rohm Semiconductor bd9e303efj-lb-e.pdf Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
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QS6J1TR QS6J1TR Rohm Semiconductor datasheet?p=QS6J1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
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QS6J1TR QS6J1TR Rohm Semiconductor datasheet?p=QS6J1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 20V 1.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
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EMH9FHAT2R EMH9FHAT2R Rohm Semiconductor SiC_SCS_AECQ.pdf Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMH9FHAT2R EMH9FHAT2R Rohm Semiconductor SiC_SCS_AECQ.pdf Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMB3FHAT2R EMB3FHAT2R Rohm Semiconductor emb3fha-e.pdf Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMB3FHAT2R EMB3FHAT2R Rohm Semiconductor emb3fha-e.pdf Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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32+0.56 EUR
40+0.44 EUR
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500+0.24 EUR
1000+0.17 EUR
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EMB2FHAT2R EMB2FHAT2R Rohm Semiconductor emb2fha-e.pdf Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EMB2FHAT2R EMB2FHAT2R Rohm Semiconductor emb2fha-e.pdf Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
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32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
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EMD3FHAT2R EMD3FHAT2R Rohm Semiconductor emd3fhat2r-e.pdf Description: GENERAL PURPOSE (DUAL DIGITAL TR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
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EMD3FHAT2R EMD3FHAT2R Rohm Semiconductor emd3fhat2r-e.pdf Description: GENERAL PURPOSE (DUAL DIGITAL TR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2960 Stücke:
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32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
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EMH52T2R EMH52T2R Rohm Semiconductor datasheet?p=EMH52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Produkt ist nicht verfügbar
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EMH52T2R EMH52T2R Rohm Semiconductor datasheet?p=EMH52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 7905 Stücke:
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29+0.62 EUR
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500+0.18 EUR
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MCR03EZPFX2401 MCR03EZPFX2401 Rohm Semiconductor mcr-e.pdf Description: RES SMD 2.4K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 kOhms
Produkt ist nicht verfügbar
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SDR10EZPF3601 SDR10EZPF3601 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
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5000+0.06 EUR
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SDR10EZPF3601 SDR10EZPF3601 Rohm Semiconductor sdr-e.pdf Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
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143+0.12 EUR
500+0.09 EUR
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ESR03EZPD3602 esr-e.pdf
ESR03EZPD3602
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
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Anzahl Preis
5000+0.05 EUR
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ESR03EZPD3602 esr-e.pdf
ESR03EZPD3602
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 36 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
99+0.18 EUR
143+0.12 EUR
166+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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ESR03EZPD3601 esr-e.pdf
ESR03EZPD3601
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
Produkt ist nicht verfügbar
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ESR03EZPD3601 esr-e.pdf
ESR03EZPD3601
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 3.6 kOhms
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
99+0.18 EUR
143+0.12 EUR
166+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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2SAR502E3TL 2sar502e3-e.pdf
2SAR502E3TL
Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
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3000+0.11 EUR
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2SAR502E3TL 2sar502e3-e.pdf
2SAR502E3TL
Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -0.5A, GENERA
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
41+0.43 EUR
100+0.21 EUR
500+0.18 EUR
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2SAR502E3HZGTL datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR502E3HZGTL
Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
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2SAR502E3HZGTL datasheet?p=2SAR502E3HZG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
2SAR502E3HZGTL
Hersteller: Rohm Semiconductor
Description: PNP, SOT-416, -30V -500MA, GENER
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 520MHz
Supplier Device Package: EMT3
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
Qualification: AEC-Q101
auf Bestellung 2941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
35+0.51 EUR
100+0.31 EUR
500+0.28 EUR
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BD14215FVJ-LAE2 datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD14215FVJ-LAE2
Hersteller: Rohm Semiconductor
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
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BD14215FVJ-LAE2 datasheet?p=BD14215FVJ-LA&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD14215FVJ-LAE2
Hersteller: Rohm Semiconductor
Description: CURRENT SENSE AMPLIFIER: THE BD1
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 125°C
Current - Supply: 310µA
Current - Input Bias: 1 µA
Voltage - Input Offset: 600 µV
Supplier Device Package: 8-TSSOP-BJ
Number of Circuits: 2
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 2484 Stücke:
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5+3.68 EUR
10+2.30 EUR
25+1.94 EUR
100+1.53 EUR
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500+1.21 EUR
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BD39042MUF-CE2 datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD39042MUF-CE2
Hersteller: Rohm Semiconductor
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
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3000+0.90 EUR
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BD39042MUF-CE2 datasheet?p=BD39042MUF-C&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
BD39042MUF-CE2
Hersteller: Rohm Semiconductor
Description: SYSTEM POWER GOOD + WATCHDOG TIM
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Output: Open Drain or Open Collector
Type: Watchdog Circuit
Reset: Active High
Operating Temperature: -40°C ~ 125°C (TA)
Number of Voltages Monitored: 4
Reset Timeout: 9ms Minimum
Voltage - Threshold: 2.5V, 2.55V
Supplier Device Package: VQFN16FV3030
Grade: Automotive
Qualification: AEC-Q100
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Anzahl Preis
5+3.82 EUR
10+2.85 EUR
25+2.60 EUR
100+2.33 EUR
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500+2.12 EUR
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BD7003NUX-E2 ul94_bd7003nux-e2-e.pdf
BD7003NUX-E2
Hersteller: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
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BR25L640F-W
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RB168MM150TFTR datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.20 EUR
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RB168MM150TFTR datasheet?p=RB168MM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 8718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
30+0.59 EUR
100+0.35 EUR
500+0.33 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
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RB168VWM150TR datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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RB168VWM150TR datasheet?p=RB168VWM150&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
28+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.28 EUR
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RB168VWM150TFTR datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Produkt ist nicht verfügbar
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RB168VWM150TFTR datasheet?p=RB168VWM150TF&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168VWM150TFTR
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 150V 1A PMDE
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.33 EUR
Mindestbestellmenge: 20
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R6049YNZ4C13 datasheet?p=R6049YNZ4&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6049YNZ4C13
Hersteller: Rohm Semiconductor
Description: NCH 600V 49A, TO-247G, POWER MOS
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247G
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.04 EUR
10+8.72 EUR
30+7.40 EUR
120+6.18 EUR
270+5.65 EUR
510+5.47 EUR
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R6049YNX3C16 datasheet?p=R6049YNX3&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
R6049YNX3C16
Hersteller: Rohm Semiconductor
Description: NCH 600V 49A, TO-220AB, POWER MO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 11A, 12V
Power Dissipation (Max): 448W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2940 pF @ 100 V
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.37 EUR
10+4.77 EUR
50+3.67 EUR
100+3.32 EUR
250+2.95 EUR
500+2.71 EUR
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DTD543XE3TL datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543XE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTD543XE3TL datasheet?p=DTD543XE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543XE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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DTD523YE3TL datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD523YE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
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DTD523YE3TL datasheet?p=DTD523YE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD523YE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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DTD543EE3TL datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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DTD543EE3TL datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD543EE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.70 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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DTD513ZE3TL datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD513ZE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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DTD513ZE3TL datasheet?p=DTD513ZE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD513ZE3TL
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
32+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 20
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ESR10EZPD3302 esr-e.pdf
ESR10EZPD3302
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Tape & Reel (TR)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.06 EUR
Mindestbestellmenge: 5000
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ESR10EZPD3302 esr-e.pdf
ESR10EZPD3302
Hersteller: Rohm Semiconductor
Description: ANTI-SURGE CHIP RESISTORS
Packaging: Cut Tape (CT)
Power (Watts): 0.4W, 2/5W
Tolerance: ±0.5%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 33 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
89+0.20 EUR
129+0.14 EUR
150+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 46
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KTR18EZPF6044 ktr-e.pdf
KTR18EZPF6044
Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Tape & Reel (TR)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
Produkt ist nicht verfügbar
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KTR18EZPF6044 ktr-e.pdf
KTR18EZPF6044
Hersteller: Rohm Semiconductor
Description: HIGH VOLTAGE RESISTANCE CHIP RES
Packaging: Cut Tape (CT)
Power (Watts): 0.25W, 1/4W
Tolerance: ±1%
Features: Automotive AEC-Q200, High Voltage
Package / Case: 1206 (3216 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 1206
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 6.04 MOhms
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
99+0.18 EUR
142+0.12 EUR
165+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 53
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RCJ200N20TL datasheet?p=RCJ200N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCJ200N20TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 200V 20A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10A, 10V
Power Dissipation (Max): 1.56W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.74 EUR
10+3.76 EUR
25+3.25 EUR
100+2.67 EUR
250+2.39 EUR
500+2.21 EUR
Mindestbestellmenge: 4
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BD6208AFS-E2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BD6208AFS-BZE2
Hersteller: Rohm Semiconductor
Description: IC POWER MANAGEMENT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BR24A64F-WLBH2 datasheet?p=BR24A64F-WLB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24A64F-WLBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+5.00 EUR
500+4.81 EUR
Mindestbestellmenge: 250
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BR24A64F-WLBH2 datasheet?p=BR24A64F-WLB(H2)&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BR24A64F-WLBH2
Hersteller: Rohm Semiconductor
Description: IC EEPROM 64KBIT I2C 400KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+5.75 EUR
25+5.62 EUR
50+5.59 EUR
100+5.02 EUR
Mindestbestellmenge: 3
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BD9E301UEFJ-LBH2 bd9e301efj-lb-e.pdf
BD9E301UEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+2.60 EUR
Mindestbestellmenge: 250
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BD9E301UEFJ-LBH2 bd9e301efj-lb-e.pdf
BD9E301UEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 570kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.93 EUR
10+7.24 EUR
25+6.27 EUR
100+5.18 EUR
Mindestbestellmenge: 2
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BD9E300UEFJ-LBH2 bd9e300efj-lb-e.pdf
BD9E300UEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+4.64 EUR
Mindestbestellmenge: 250
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BD9E300UEFJ-LBH2 bd9e300efj-lb-e.pdf
BD9E300UEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 2.5A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 25.2V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.93 EUR
10+7.24 EUR
25+6.27 EUR
100+5.18 EUR
Mindestbestellmenge: 2
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BD9E303UEFJ-LBH2 bd9e303efj-lb-e.pdf
BD9E303UEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
Produkt ist nicht verfügbar
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BD9E303UEFJ-LBH2 bd9e303efj-lb-e.pdf
BD9E303UEFJ-LBH2
Hersteller: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HTSOP-J
Synchronous Rectifier: Yes
Voltage - Output (Max): 28.8V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 1V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.42 EUR
10+7.58 EUR
25+6.57 EUR
Mindestbestellmenge: 2
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QS6J1TR datasheet?p=QS6J1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6J1TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
Mindestbestellmenge: 3000
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QS6J1TR datasheet?p=QS6J1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
QS6J1TR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 20V 1.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
auf Bestellung 5847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.86 EUR
100+0.60 EUR
500+0.50 EUR
1000+0.42 EUR
Mindestbestellmenge: 18
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EMH9FHAT2R SiC_SCS_AECQ.pdf
EMH9FHAT2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.10 EUR
Mindestbestellmenge: 8000
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EMH9FHAT2R SiC_SCS_AECQ.pdf
EMH9FHAT2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.12 EUR
2000+0.10 EUR
Mindestbestellmenge: 32
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EMB3FHAT2R emb3fha-e.pdf
EMB3FHAT2R
Hersteller: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EMB3FHAT2R emb3fha-e.pdf
EMB3FHAT2R
Hersteller: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 32
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EMB2FHAT2R emb2fha-e.pdf
EMB2FHAT2R
Hersteller: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EMB2FHAT2R emb2fha-e.pdf
EMB2FHAT2R
Hersteller: Rohm Semiconductor
Description: PNP+PNP DIGITAL TRANSISTOR (CORR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 32
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EMD3FHAT2R emd3fhat2r-e.pdf
EMD3FHAT2R
Hersteller: Rohm Semiconductor
Description: GENERAL PURPOSE (DUAL DIGITAL TR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EMD3FHAT2R emd3fhat2r-e.pdf
EMD3FHAT2R
Hersteller: Rohm Semiconductor
Description: GENERAL PURPOSE (DUAL DIGITAL TR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
40+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
2000+0.15 EUR
Mindestbestellmenge: 32
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EMH52T2R datasheet?p=EMH52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH52T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Produkt ist nicht verfügbar
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EMH52T2R datasheet?p=EMH52&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH52T2R
Hersteller: Rohm Semiconductor
Description: NPN+NPN DIGITAL TRANSISTOR(WITH
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
auf Bestellung 7905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
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MCR03EZPFX2401 mcr-e.pdf
MCR03EZPFX2401
Hersteller: Rohm Semiconductor
Description: RES SMD 2.4K OHM 1% 1/10W 0603
Packaging: Cut Tape (CT)
Power (Watts): 0.1W, 1/10W
Tolerance: ±1%
Features: Automotive AEC-Q200
Package / Case: 0603 (1608 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0603
Height - Seated (Max): 0.022" (0.55mm)
Resistance: 2.4 kOhms
Produkt ist nicht verfügbar
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SDR10EZPF3601 sdr-e.pdf
SDR10EZPF3601
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Tape & Reel (TR)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.06 EUR
Mindestbestellmenge: 5000
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SDR10EZPF3601 sdr-e.pdf
SDR10EZPF3601
Hersteller: Rohm Semiconductor
Description: HIGH ANTI-SURGE THICK FILM CHIP
Packaging: Cut Tape (CT)
Power (Watts): 0.5W, 1/2W
Tolerance: ±1%
Features: Automotive AEC-Q200, Pulse Withstanding
Package / Case: 0805 (2012 Metric)
Temperature Coefficient: ±100ppm/°C
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Composition: Thick Film
Operating Temperature: -55°C ~ 155°C
Ratings: AEC-Q200
Number of Terminations: 2
Supplier Device Package: 0805
Height - Seated (Max): 0.026" (0.65mm)
Resistance: 3.6 kOhms
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
85+0.21 EUR
123+0.14 EUR
143+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 44
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