Produkte > SANKEN ELECTRIC USA INC. > Alle Produkte des Herstellers SANKEN ELECTRIC USA INC. (1129) > Seite 12 nach 19
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SJPB-H6VR | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPB-H6VR | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
auf Bestellung 2692 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPB-L4 | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 40V 3A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPB-L4V | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 40V 3A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPB-L4VL | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 40V 3A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPB-L4VR | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 40V 3A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPE-H4VR | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 40V 2A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
auf Bestellung 1076 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPE-H4VR | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 40V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SJPJ-L3 | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 30V 3A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SJPJ-L3V | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 30V 3A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPJ-L3VL | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 30V 3A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPJ-L3VL | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 30V 3A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
auf Bestellung 1569 Stücke: Lieferzeit 10-14 Tag (e) |
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| SJPJ-L3VR | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 30V 3A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Current - Reverse Leakage @ Vr: 300 µA @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SJPL-D2 | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 1A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-D2V | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 1A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-D2VL | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 1A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-D2VL | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 1A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-D2VR | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 1A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-F4VR | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1.5A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 6800 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPL-F4VR | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1.5A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 5400 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPL-H2 | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H2V | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H2VL | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 2A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H2VL | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H2VR | Sanken Electric USA Inc. |
Description: DIODE STANDARD 200V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H6 | Sanken Electric USA Inc. |
Description: DIODE STANDARD 600V 2A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H6V | Sanken Electric USA Inc. |
Description: DIODE STANDARD 600V 2A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H6VL | Sanken Electric USA Inc. |
Description: DIODE STANDARD 600V 2A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-H6VR | Sanken Electric USA Inc. |
Description: DIODE STANDARD 600V 2A SJP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-L4VR | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 3A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPL-L4VR | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 3A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
auf Bestellung 1381 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPX-H3 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 300V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPX-H3V | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 300V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SJPX-H3VL | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 300V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SJPX-H3VR | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 300V 2A SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPX-H3VR | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 300V 2A SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 300 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPZ-E20 | Sanken Electric USA Inc. |
Description: DIODE ZENER 20V 1W SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: SJP Unidirectional Channels: 1 Voltage - Breakdown (Min): 25V Power - Peak Pulse: 50W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPZ-E20V | Sanken Electric USA Inc. |
Description: DIODE ZENER 20V 1W SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: SJP Unidirectional Channels: 1 Voltage - Breakdown (Min): 25V Power - Peak Pulse: 50W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPZ-K28 | Sanken Electric USA Inc. |
Description: DIODE ZENER 28V 1W SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: SJP Unidirectional Channels: 1 Voltage - Breakdown (Min): 25V Power - Peak Pulse: 50W Power Line Protection: No Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPZ-K28V | Sanken Electric USA Inc. |
Description: DIODE ZENER 28V 1W SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: SJP Unidirectional Channels: 1 Voltage - Breakdown (Min): 25V Power - Peak Pulse: 50W Power Line Protection: No Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SJPZ-N33VR | Sanken Electric USA Inc. |
Description: DIODE ZENER 33V 2W SJPPackaging: Cut Tape (CT) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: SJP Unidirectional Channels: 1 Voltage - Breakdown (Min): 31V Power - Peak Pulse: 500W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1850 Stücke: Lieferzeit 10-14 Tag (e) |
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SJPZ-N33VR | Sanken Electric USA Inc. |
Description: DIODE ZENER 33V 2W SJPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, J-Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: SJP Unidirectional Channels: 1 Voltage - Breakdown (Min): 31V Power - Peak Pulse: 500W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SKI04024 | Sanken Electric USA Inc. |
Description: MOSFET N-CH 40V 85A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 82.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 97.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SKI04024 | Sanken Electric USA Inc. |
Description: MOSFET N-CH 40V 85A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 82.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Supplier Device Package: TO-263 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 97.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SKP253 | Sanken Electric USA Inc. |
Description: MOSFET N-CH 250V 20A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SKP253VR | Sanken Electric USA Inc. |
Description: MOSFET N-CH 250V 20A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SLA2402MS | Sanken Electric USA Inc. |
Description: IC HALF BRIDGE DRIVER 15A 18ZIPPackaging: Tube Package / Case: 18-SSIP Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (2) Voltage - Supply: 15V Applications: General Purpose Current - Output / Channel: 15A Technology: Power MOSFET Supplier Device Package: 18-ZIP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SLA4030 | Sanken Electric USA Inc. |
Description: TRANS 4NPN DARL 100V 4A 12SIPPackaging: Tube Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Transistor Type: 4 NPN Darlington (Quad) Operating Temperature: 150°C (TJ) Power - Max: 5W Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V Supplier Device Package: 12-SIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA4031 | Sanken Electric USA Inc. |
Description: TRANS 4NPN DARL 120V 4A 12SIPPackaging: Tube Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Transistor Type: 4 NPN Darlington (Quad) Operating Temperature: 150°C (TJ) Power - Max: 5W Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V Supplier Device Package: 12-SIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA4052 | Sanken Electric USA Inc. |
Description: TRANS 9 NPN DARL 120V 3A 21-SIPPackaging: Tube Package / Case: 21-SSIP Exposed Tab Mounting Type: Through Hole Transistor Type: 9 NPN Darlington Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 120V Supplier Device Package: 21-SIP w/fin |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA4390 | Sanken Electric USA Inc. |
Description: TRANS 2NPN/2PNP DARL 100V 12SIPPackaging: Tube Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Transistor Type: 2 NPN, 2 PNP Darlington (H-Bridge) Operating Temperature: 150°C (TJ) Power - Max: 5W Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V Supplier Device Package: 12-SIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA5037 | Sanken Electric USA Inc. |
Description: MOSFET 4N-CH 100V 10A 12SIPPackaging: Tube Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250mA Supplier Device Package: 12-SIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 180 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA5060 | Sanken Electric USA Inc. |
Description: MOSFET 3N/3P-CH 60V 6A 12SIPPackaging: Bulk Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Configuration: 3 N and 3 P-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V FET Feature: Logic Level Gate Supplier Device Package: 12-SIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1080 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA5064 | Sanken Electric USA Inc. |
Description: MOSFET 3N/3P-CH 60V 10A 12SIPPackaging: Bulk Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Configuration: 3 N and 3 P-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V FET Feature: Logic Level Gate Supplier Device Package: 12-SIP Part Status: Active |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA5065 | Sanken Electric USA Inc. |
Description: MOSFET 4N-CH 60V 7A 15ZIPPackaging: Tube Package / Case: 15-SIP Exposed Tab, Formed Leads Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 15-ZIP Part Status: Active |
auf Bestellung 974 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA5065 LF830 | Sanken Electric USA Inc. |
Description: MOSFET 4N-CH 60V 7A 15SIPPackaging: Tube Package / Case: 15-SIP Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 15-SIP Part Status: Active |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA5068 | Sanken Electric USA Inc. |
Description: MOSFET 6N-CH 60V 7A 15ZIPPackaging: Tube Package / Case: 15-SIP Exposed Tab, Formed Leads Mounting Type: Through Hole Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 15-ZIP |
auf Bestellung 307 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA5073 | Sanken Electric USA Inc. |
Description: MOSFET 6N-CH 60V 5A 15ZIPPackaging: Tube Package / Case: 15-SIP Exposed Tab, Formed Leads Mounting Type: Through Hole Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 15-ZIP Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 180 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SLA5086 | Sanken Electric USA Inc. |
Description: MOSFET 5P-CH 60V 5A 12SIPPackaging: Tube Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Configuration: 5 P-Channel, Common Source Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 12-SIP |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
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SLA5201 | Sanken Electric USA Inc. |
Description: MOSFET 3N/3P-CH 600V 7A 15ZIPPackaging: Tube Package / Case: 15-SIP Exposed Tab, Formed Leads Mounting Type: Through Hole Configuration: 3 N and 3 P-Channel (3-Phase Bridge) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A Supplier Device Package: 15-ZIP Part Status: Active |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
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| SJPB-H6VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 60V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1800+ | 0.44 EUR |
| SJPB-H6VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 60V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 2692 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.19 EUR |
| 21+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| SJPB-L4 |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 3A SJP
Description: DIODE SCHOTTKY 40V 3A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPB-L4V |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 3A SJP
Description: DIODE SCHOTTKY 40V 3A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPB-L4VL |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 3A SJP
Description: DIODE SCHOTTKY 40V 3A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPB-L4VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 3A SJP
Description: DIODE SCHOTTKY 40V 3A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPE-H4VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 1076 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 21+ | 1 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.58 EUR |
| SJPE-H4VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 40V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPJ-L3 |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPJ-L3V |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPJ-L3VL |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPJ-L3VL |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| SJPJ-L3VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Description: DIODE SCHOTTKY 30V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-D2 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-D2V |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-D2VL |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-D2VL |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE STANDARD 200V 1A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-D2VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Description: DIODE STANDARD 200V 1A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-F4VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.5A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.76 EUR |
| SJPL-F4VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.5A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1800+ | 0.62 EUR |
| 3600+ | 0.55 EUR |
| 5400+ | 0.52 EUR |
| SJPL-H2 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H2V |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H2VL |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H2VL |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H2VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H6 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 600V 2A SJP
Description: DIODE STANDARD 600V 2A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H6V |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 600V 2A SJP
Description: DIODE STANDARD 600V 2A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H6VL |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 600V 2A SJP
Description: DIODE STANDARD 600V 2A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-H6VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE STANDARD 600V 2A SJP
Description: DIODE STANDARD 600V 2A SJP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-L4VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 400V 3A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SJPL-L4VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 3A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 400V 3A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 17+ | 1.25 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.73 EUR |
| SJPX-H3 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SJPX-H3V |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SJPX-H3VL |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SJPX-H3VR |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
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| SJPX-H3VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Description: DIODE GEN PURP 300V 2A SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SJP
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Produkt ist nicht verfügbar
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| SJPZ-E20 |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE ZENER 20V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 20V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| SJPZ-E20V |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE ZENER 20V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 20V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| SJPZ-K28 |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE ZENER 28V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Description: DIODE ZENER 28V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
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| SJPZ-K28V |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE ZENER 28V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Description: DIODE ZENER 28V 1W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25V
Power - Peak Pulse: 50W
Power Line Protection: No
Grade: Automotive
Produkt ist nicht verfügbar
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| SJPZ-N33VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE ZENER 33V 2W SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 2W SJP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.3 EUR |
| 19+ | 1.13 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.65 EUR |
| SJPZ-N33VR |
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Hersteller: Sanken Electric USA Inc.
Description: DIODE ZENER 33V 2W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 33V 2W SJP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, J-Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: SJP
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| SKI04024 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 40V 85A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 82.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Description: MOSFET N-CH 40V 85A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 82.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
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| SKI04024 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 40V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 82.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Description: MOSFET N-CH 40V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 82.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: TO-263
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
Produkt ist nicht verfügbar
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| SKP253 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 250V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 250V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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| SKP253VR |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 250V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 250V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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| SLA2402MS |
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Hersteller: Sanken Electric USA Inc.
Description: IC HALF BRIDGE DRIVER 15A 18ZIP
Packaging: Tube
Package / Case: 18-SSIP Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 15V
Applications: General Purpose
Current - Output / Channel: 15A
Technology: Power MOSFET
Supplier Device Package: 18-ZIP
Part Status: Active
Description: IC HALF BRIDGE DRIVER 15A 18ZIP
Packaging: Tube
Package / Case: 18-SSIP Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 15V
Applications: General Purpose
Current - Output / Channel: 15A
Technology: Power MOSFET
Supplier Device Package: 18-ZIP
Part Status: Active
Produkt ist nicht verfügbar
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| SLA4030 |
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Hersteller: Sanken Electric USA Inc.
Description: TRANS 4NPN DARL 100V 4A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Operating Temperature: 150°C (TJ)
Power - Max: 5W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V
Supplier Device Package: 12-SIP
Description: TRANS 4NPN DARL 100V 4A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Operating Temperature: 150°C (TJ)
Power - Max: 5W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 10mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 4V
Supplier Device Package: 12-SIP
Produkt ist nicht verfügbar
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| SLA4031 |
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Hersteller: Sanken Electric USA Inc.
Description: TRANS 4NPN DARL 120V 4A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Operating Temperature: 150°C (TJ)
Power - Max: 5W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: 12-SIP
Description: TRANS 4NPN DARL 120V 4A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Operating Temperature: 150°C (TJ)
Power - Max: 5W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Supplier Device Package: 12-SIP
Produkt ist nicht verfügbar
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| SLA4052 |
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Hersteller: Sanken Electric USA Inc.
Description: TRANS 9 NPN DARL 120V 3A 21-SIP
Packaging: Tube
Package / Case: 21-SSIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 9 NPN Darlington
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 120V
Supplier Device Package: 21-SIP w/fin
Description: TRANS 9 NPN DARL 120V 3A 21-SIP
Packaging: Tube
Package / Case: 21-SSIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 9 NPN Darlington
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 120V
Supplier Device Package: 21-SIP w/fin
Produkt ist nicht verfügbar
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| SLA4390 |
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Hersteller: Sanken Electric USA Inc.
Description: TRANS 2NPN/2PNP DARL 100V 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 2 NPN, 2 PNP Darlington (H-Bridge)
Operating Temperature: 150°C (TJ)
Power - Max: 5W
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V
Supplier Device Package: 12-SIP
Description: TRANS 2NPN/2PNP DARL 100V 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Transistor Type: 2 NPN, 2 PNP Darlington (H-Bridge)
Operating Temperature: 150°C (TJ)
Power - Max: 5W
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 4V
Supplier Device Package: 12-SIP
Produkt ist nicht verfügbar
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| SLA5037 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 4N-CH 100V 10A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: 12-SIP
Description: MOSFET 4N-CH 100V 10A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250mA
Supplier Device Package: 12-SIP
Produkt ist nicht verfügbar
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| SLA5060 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 3N/3P-CH 60V 6A 12SIP
Packaging: Bulk
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V
FET Feature: Logic Level Gate
Supplier Device Package: 12-SIP
Description: MOSFET 3N/3P-CH 60V 6A 12SIP
Packaging: Bulk
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V
FET Feature: Logic Level Gate
Supplier Device Package: 12-SIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1080 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SLA5064 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 3N/3P-CH 60V 10A 12SIP
Packaging: Bulk
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V
FET Feature: Logic Level Gate
Supplier Device Package: 12-SIP
Part Status: Active
Description: MOSFET 3N/3P-CH 60V 10A 12SIP
Packaging: Bulk
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V, 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 4V
FET Feature: Logic Level Gate
Supplier Device Package: 12-SIP
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.92 EUR |
| SLA5065 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 4N-CH 60V 7A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-ZIP
Part Status: Active
Description: MOSFET 4N-CH 60V 7A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-ZIP
Part Status: Active
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.82 EUR |
| 10+ | 10.82 EUR |
| 180+ | 8.64 EUR |
| SLA5065 LF830 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 4N-CH 60V 7A 15SIP
Packaging: Tube
Package / Case: 15-SIP
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-SIP
Part Status: Active
Description: MOSFET 4N-CH 60V 7A 15SIP
Packaging: Tube
Package / Case: 15-SIP
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-SIP
Part Status: Active
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.82 EUR |
| 10+ | 10.82 EUR |
| SLA5068 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 6N-CH 60V 7A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-ZIP
Description: MOSFET 6N-CH 60V 7A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-ZIP
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.64 EUR |
| 10+ | 12.86 EUR |
| 180+ | 10.72 EUR |
| SLA5073 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 6N-CH 60V 5A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-ZIP
Part Status: Active
Description: MOSFET 6N-CH 60V 5A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 15-ZIP
Part Status: Active
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Mindestbestellmenge: 180 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SLA5086 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 5P-CH 60V 5A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 5 P-Channel, Common Source
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 12-SIP
Description: MOSFET 5P-CH 60V 5A 12SIP
Packaging: Tube
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 5 P-Channel, Common Source
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 12-SIP
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.71 EUR |
| 18+ | 12.48 EUR |
| 54+ | 10.84 EUR |
| 108+ | 10.02 EUR |
| SLA5201 |
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Hersteller: Sanken Electric USA Inc.
Description: MOSFET 3N/3P-CH 600V 7A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 15-ZIP
Part Status: Active
Description: MOSFET 3N/3P-CH 600V 7A 15ZIP
Packaging: Tube
Package / Case: 15-SIP Exposed Tab, Formed Leads
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 15-ZIP
Part Status: Active
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.77 EUR |
| 10+ | 15.15 EUR |










