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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDS9435A Produktcode: 36583 |
Fairchild |
Transistoren > Transistoren P-Kanal-Feld Gehäuse: SO-8 Uds,V: 30 Id,A: 5.3 Rds(on),Om: 0.05 Ciss, pF/Qg, nC: 528/10 /: SMD |
auf Bestellung 82 Stück: Lieferzeit 21-28 Tag (e) |
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FDS9926A Produktcode: 34127 |
Fairchild |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 20 Idd,A: 06.05.2015 Rds(on), Ohm: 01.03.2000 Ciss, pF/Qg, nC: 01.07.700 Bem.: 2N JHGF: SMD |
verfügbar: 192 Stück
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FDS9400A | Fairchild Semiconductor |
Description: MOSFET P-CH 30V 3.4A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V |
auf Bestellung 26104 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9400A | ON Semiconductor | Trans MOSFET P-CH 30V 3.4A 8-Pin SOIC T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9412 | Fairchild Semiconductor |
Description: MOSFET N-CH 30V 7.9A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V |
auf Bestellung 116238 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9412 | ONSEMI |
Description: ONSEMI - FDS9412 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 116238 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ON-Semicoductor |
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 583 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9431A | ON-Semicoductor |
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9431A | TECH PUBLIC |
Transistor P-Channel MOSFET; 20V; 12V; 22mOhm; 7,5A; 2,4W; -50°C~150°C; FDS9431A TFDS9431a TEC Anzahl je Verpackung: 10 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9431A | ON-Semicoductor |
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9431A | ON-Semicoductor |
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 4470 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9431A | onsemi / Fairchild | MOSFET SO-8 SGL P-CH -20V |
auf Bestellung 881 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9431A | onsemi |
Description: MOSFET P-CH 20V 3.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 175 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9431A | ONSEMI |
Description: ONSEMI - FDS9431A - Leistungs-MOSFET, p-Kanal, 20 V, 3.5 A, 0.13 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4067 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ON Semiconductor | Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ON Semiconductor | Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ON Semiconductor | Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ON Semiconductor | Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ONSEMI |
Description: ONSEMI - FDS9431A - Leistungs-MOSFET, p-Kanal, 20 V, 3.5 A, 0.13 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.13ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4067 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9431A | ON Semiconductor | Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R |
auf Bestellung 22500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.3A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 80mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9435A | ON-Semicoductor |
Transistor P-Channel MOSFET; 30V; 25V; 80mOhm; 5,3A; 2,5W; -55°C ~ 175°C; FDS9435A TFDS9435a Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9435A | onsemi / Fairchild | MOSFET SO-8 SGL P-CH -30V |
auf Bestellung 1359 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9435A | onsemi |
Description: MOSFET P-CH 30V 5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9435A | onsemi |
Description: MOSFET P-CH 30V 5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V |
auf Bestellung 40950 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9435A | ON Semiconductor | Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ON Semiconductor | Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ONSEMI |
Description: ONSEMI - FDS9435A - Leistungs-MOSFET, p-Kanal, 30 V, 5.3 A, 0.042 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.042ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 21678 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ON Semiconductor | Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ON Semiconductor | Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R |
auf Bestellung 32500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ONSEMI |
Description: ONSEMI - FDS9435A - Leistungs-MOSFET, p-Kanal, 30 V, 5.3 A, 0.042 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.042ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 21678 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ON Semiconductor | Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A | ON Semiconductor | Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A-NBAD008 | ONSEMI |
Description: ONSEMI - FDS9435A-NBAD008 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3975 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435AR | Fairchaild | Транз. полевой SOIC-8 P-MOSFET Vdss=30V, Id=5,3A, Rds=50 mOhm @ 5.3A, 10V, Pmax=2,5W |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9926A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1371 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9926A | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1371 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9926A | ON-Semicoductor |
Transistor 2xN-Channel MOSFET; 20V; 10V; 50mOhm; 6,5A; 2W; -55°C ~ 150°C; FDS9926A TFDS9926a Anzahl je Verpackung: 25 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS9926A | onsemi / Fairchild | MOSFET SO-8 SGL N-CH 2.5V |
auf Bestellung 78186 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9926A | onsemi |
Description: MOSFET 2N-CH 20V 6.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9926A | onsemi |
Description: MOSFET 2N-CH 20V 6.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 35064 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9926A | Fairchild/ON Semiconductor | N-канальний ПТ; Udss, В = 20; Id = 6,5 А; Ciss, пФ @ Uds, В = 650 @ 10; Qg, нКл = 9 @ 4,5 В; Rds = 30 мОм @ 6,5 А, 4,5 В; Ugs(th) = 1,5 В @ 250 мкА; Р, Вт = 0,9; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8 |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9926A | ONSEMI |
Description: ONSEMI - FDS9926A - Dual-MOSFET, n-Kanal, 20 V, 6.5 A, 0.025 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 7475 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9926A | ONSEMI |
Description: ONSEMI - FDS9926A - Dual-MOSFET, n-Kanal, 20 V, 6.5 A, 0.025 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 7475 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9933 | Fairchild Semiconductor |
Description: MOSFET 2P-CH 20V 5A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9933 | ONSEMI |
Description: ONSEMI - FDS9933 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9933A | onsemi |
Description: MOSFET 2P-CH 20V 3.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 11983 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9933A | onsemi / Fairchild | MOSFET SO-8 DUAL P-CH -20V |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9933A | onsemi |
Description: MOSFET 2P-CH 20V 3.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9933A | ON Semiconductor | Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R |
auf Bestellung 1253 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9933A | ONSEMI |
Description: ONSEMI - FDS9933A - Dual-MOSFET, p-Kanal, 20 V, 3.8 A tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.8A hazardous: true rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: - Drain-Source-Durchgangswiderstand, p-Kanal: 0.075ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: - euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: - Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2229 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9933A | ON Semiconductor | Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R |
auf Bestellung 1253 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9933BZ | Fairchild Semiconductor |
Description: MOSFET 2P-CH 20V 4.9A 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
auf Bestellung 10716 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9933BZ | ONSEMI |
Description: ONSEMI - FDS9933BZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 391 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | onsemi / Fairchild | MOSFET 20V Complementary PowerTrench |
auf Bestellung 19323 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9934C | onsemi |
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9934C | onsemi |
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3643 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS9934C | ON Semiconductor | Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 592 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9934C | ON Semiconductor | Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R |
auf Bestellung 302500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS9435A Produktcode: 36583 |
Hersteller: Fairchild
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 30
Id,A: 5.3
Rds(on),Om: 0.05
Ciss, pF/Qg, nC: 528/10
/: SMD
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 30
Id,A: 5.3
Rds(on),Om: 0.05
Ciss, pF/Qg, nC: 528/10
/: SMD
auf Bestellung 82 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.57 EUR |
10+ | 0.42 EUR |
FDS9926A Produktcode: 34127 |
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 20
Idd,A: 06.05.2015
Rds(on), Ohm: 01.03.2000
Ciss, pF/Qg, nC: 01.07.700
Bem.: 2N
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 20
Idd,A: 06.05.2015
Rds(on), Ohm: 01.03.2000
Ciss, pF/Qg, nC: 01.07.700
Bem.: 2N
JHGF: SMD
verfügbar: 192 Stück
Anzahl | Preis ohne MwSt |
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1+ | 0.57 EUR |
10+ | 0.42 EUR |
FDS9400A |
Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 30V 3.4A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
Description: MOSFET P-CH 30V 3.4A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
auf Bestellung 26104 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
574+ | 0.84 EUR |
FDS9400A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 3.4A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 3.4A 8-Pin SOIC T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)FDS9412 |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 7.9A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V
Description: MOSFET N-CH 30V 7.9A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V
auf Bestellung 116238 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1110+ | 0.44 EUR |
FDS9412 |
Hersteller: ONSEMI
Description: ONSEMI - FDS9412 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FDS9412 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 116238 Stücke:
Lieferzeit 14-21 Tag (e)FDS9431A |
Hersteller: ON-Semicoductor
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 583 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.05 EUR |
FDS9431A |
Hersteller: ON-Semicoductor
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.05 EUR |
FDS9431A |
Hersteller: TECH PUBLIC
Transistor P-Channel MOSFET; 20V; 12V; 22mOhm; 7,5A; 2,4W; -50°C~150°C; FDS9431A TFDS9431a TEC
Anzahl je Verpackung: 10 Stücke
Transistor P-Channel MOSFET; 20V; 12V; 22mOhm; 7,5A; 2,4W; -50°C~150°C; FDS9431A TFDS9431a TEC
Anzahl je Verpackung: 10 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.78 EUR |
FDS9431A |
Hersteller: ON-Semicoductor
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.05 EUR |
FDS9431A |
Hersteller: ON-Semicoductor
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
P-MOSFET 3.5A 20V 1W 0.13Ω FDS9431A TFDS9431a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4470 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.05 EUR |
FDS9431A |
Hersteller: onsemi / Fairchild
MOSFET SO-8 SGL P-CH -20V
MOSFET SO-8 SGL P-CH -20V
auf Bestellung 881 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.47 EUR |
10+ | 1.27 EUR |
100+ | 0.88 EUR |
500+ | 0.76 EUR |
1000+ | 0.63 EUR |
2500+ | 0.56 EUR |
5000+ | 0.55 EUR |
FDS9431A |
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: MOSFET P-CH 20V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.46 EUR |
14+ | 1.26 EUR |
100+ | 0.88 EUR |
FDS9431A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9431A - Leistungs-MOSFET, p-Kanal, 20 V, 3.5 A, 0.13 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9431A - Leistungs-MOSFET, p-Kanal, 20 V, 3.5 A, 0.13 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4067 Stücke:
Lieferzeit 14-21 Tag (e)FDS9431A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.46 EUR |
FDS9431A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)FDS9431A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.46 EUR |
FDS9431A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.45 EUR |
FDS9431A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9431A - Leistungs-MOSFET, p-Kanal, 20 V, 3.5 A, 0.13 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9431A - Leistungs-MOSFET, p-Kanal, 20 V, 3.5 A, 0.13 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 600mV
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.13ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4067 Stücke:
Lieferzeit 14-21 Tag (e)FDS9431A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.5A 8-Pin SOIC T/R
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.46 EUR |
FDS9435A |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 7.95 EUR |
FDS9435A |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.3A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 7.95 EUR |
25+ | 2.86 EUR |
39+ | 1.83 EUR |
106+ | 0.67 EUR |
FDS9435A |
Hersteller: ON-Semicoductor
Transistor P-Channel MOSFET; 30V; 25V; 80mOhm; 5,3A; 2,5W; -55°C ~ 175°C; FDS9435A TFDS9435a
Anzahl je Verpackung: 25 Stücke
Transistor P-Channel MOSFET; 30V; 25V; 80mOhm; 5,3A; 2,5W; -55°C ~ 175°C; FDS9435A TFDS9435a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.42 EUR |
FDS9435A |
Hersteller: onsemi / Fairchild
MOSFET SO-8 SGL P-CH -30V
MOSFET SO-8 SGL P-CH -30V
auf Bestellung 1359 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.1 EUR |
10+ | 0.95 EUR |
100+ | 0.66 EUR |
500+ | 0.55 EUR |
1000+ | 0.47 EUR |
2500+ | 0.42 EUR |
FDS9435A |
Hersteller: onsemi
Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.41 EUR |
5000+ | 0.39 EUR |
12500+ | 0.36 EUR |
FDS9435A |
Hersteller: onsemi
Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
Description: MOSFET P-CH 30V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 15 V
auf Bestellung 40950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.95 EUR |
100+ | 0.65 EUR |
500+ | 0.55 EUR |
1000+ | 0.47 EUR |
FDS9435A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.62 EUR |
FDS9435A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)FDS9435A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9435A - Leistungs-MOSFET, p-Kanal, 30 V, 5.3 A, 0.042 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9435A - Leistungs-MOSFET, p-Kanal, 30 V, 5.3 A, 0.042 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 21678 Stücke:
Lieferzeit 14-21 Tag (e)FDS9435A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
150+ | 1.04 EUR |
FDS9435A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.38 EUR |
5000+ | 0.32 EUR |
FDS9435A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9435A - Leistungs-MOSFET, p-Kanal, 30 V, 5.3 A, 0.042 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9435A - Leistungs-MOSFET, p-Kanal, 30 V, 5.3 A, 0.042 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.042ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 21678 Stücke:
Lieferzeit 14-21 Tag (e)FDS9435A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.43 EUR |
FDS9435A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
153+ | 1.02 EUR |
176+ | 0.86 EUR |
192+ | 0.76 EUR |
FDS9435A-NBAD008 |
Hersteller: ONSEMI
Description: ONSEMI - FDS9435A-NBAD008 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FDS9435A-NBAD008 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3975 Stücke:
Lieferzeit 14-21 Tag (e)FDS9435AR |
Hersteller: Fairchaild
Транз. полевой SOIC-8 P-MOSFET Vdss=30V, Id=5,3A, Rds=50 mOhm @ 5.3A, 10V, Pmax=2,5W
Транз. полевой SOIC-8 P-MOSFET Vdss=30V, Id=5,3A, Rds=50 mOhm @ 5.3A, 10V, Pmax=2,5W
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.6 EUR |
10+ | 2.38 EUR |
FDS9926A |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1371 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
110+ | 0.65 EUR |
123+ | 0.58 EUR |
161+ | 0.45 EUR |
170+ | 0.42 EUR |
FDS9926A |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1371 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
110+ | 0.65 EUR |
123+ | 0.58 EUR |
161+ | 0.45 EUR |
170+ | 0.42 EUR |
2500+ | 0.41 EUR |
FDS9926A |
Hersteller: ON-Semicoductor
Transistor 2xN-Channel MOSFET; 20V; 10V; 50mOhm; 6,5A; 2W; -55°C ~ 150°C; FDS9926A TFDS9926a
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 20V; 10V; 50mOhm; 6,5A; 2W; -55°C ~ 150°C; FDS9926A TFDS9926a
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.1 EUR |
FDS9926A |
Hersteller: onsemi / Fairchild
MOSFET SO-8 SGL N-CH 2.5V
MOSFET SO-8 SGL N-CH 2.5V
auf Bestellung 78186 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 0.98 EUR |
10+ | 0.83 EUR |
100+ | 0.62 EUR |
500+ | 0.57 EUR |
1000+ | 0.48 EUR |
2500+ | 0.43 EUR |
FDS9926A |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.43 EUR |
5000+ | 0.4 EUR |
12500+ | 0.37 EUR |
FDS9926A |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 35064 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.13 EUR |
19+ | 0.98 EUR |
100+ | 0.67 EUR |
500+ | 0.56 EUR |
1000+ | 0.48 EUR |
FDS9926A |
Hersteller: Fairchild/ON Semiconductor
N-канальний ПТ; Udss, В = 20; Id = 6,5 А; Ciss, пФ @ Uds, В = 650 @ 10; Qg, нКл = 9 @ 4,5 В; Rds = 30 мОм @ 6,5 А, 4,5 В; Ugs(th) = 1,5 В @ 250 мкА; Р, Вт = 0,9; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
N-канальний ПТ; Udss, В = 20; Id = 6,5 А; Ciss, пФ @ Uds, В = 650 @ 10; Qg, нКл = 9 @ 4,5 В; Rds = 30 мОм @ 6,5 А, 4,5 В; Ugs(th) = 1,5 В @ 250 мкА; Р, Вт = 0,9; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 1.09 EUR |
10+ | 0.89 EUR |
100+ | 0.78 EUR |
FDS9926A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9926A - Dual-MOSFET, n-Kanal, 20 V, 6.5 A, 0.025 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9926A - Dual-MOSFET, n-Kanal, 20 V, 6.5 A, 0.025 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 7475 Stücke:
Lieferzeit 14-21 Tag (e)FDS9926A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9926A - Dual-MOSFET, n-Kanal, 20 V, 6.5 A, 0.025 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9926A - Dual-MOSFET, n-Kanal, 20 V, 6.5 A, 0.025 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 6.5A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.025ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 7475 Stücke:
Lieferzeit 14-21 Tag (e)FDS9933 |
Hersteller: Fairchild Semiconductor
Description: MOSFET 2P-CH 20V 5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 5A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
761+ | 0.63 EUR |
FDS9933 |
Hersteller: ONSEMI
Description: ONSEMI - FDS9933 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FDS9933 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)FDS9933A |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 20V 3.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 11983 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
13+ | 1.45 EUR |
100+ | 1.13 EUR |
500+ | 0.95 EUR |
1000+ | 0.78 EUR |
FDS9933A |
Hersteller: onsemi / Fairchild
MOSFET SO-8 DUAL P-CH -20V
MOSFET SO-8 DUAL P-CH -20V
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.62 EUR |
10+ | 1.34 EUR |
100+ | 1.06 EUR |
500+ | 0.92 EUR |
1000+ | 0.77 EUR |
2500+ | 0.76 EUR |
FDS9933A |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 20V 3.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.73 EUR |
5000+ | 0.7 EUR |
FDS9933A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R
auf Bestellung 1253 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
171+ | 0.92 EUR |
172+ | 0.88 EUR |
196+ | 0.74 EUR |
250+ | 0.71 EUR |
500+ | 0.63 EUR |
1000+ | 0.54 EUR |
FDS9933A |
Hersteller: ONSEMI
Description: ONSEMI - FDS9933A - Dual-MOSFET, p-Kanal, 20 V, 3.8 A
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.8A
hazardous: true
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: -
Drain-Source-Durchgangswiderstand, p-Kanal: 0.075ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: -
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - FDS9933A - Dual-MOSFET, p-Kanal, 20 V, 3.8 A
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.8A
hazardous: true
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: -
Drain-Source-Durchgangswiderstand, p-Kanal: 0.075ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: -
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: -
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2229 Stücke:
Lieferzeit 14-21 Tag (e)FDS9933A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 3.8A 8-Pin SOIC T/R
auf Bestellung 1253 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
155+ | 1.01 EUR |
171+ | 0.88 EUR |
172+ | 0.85 EUR |
196+ | 0.71 EUR |
250+ | 0.68 EUR |
500+ | 0.6 EUR |
1000+ | 0.51 EUR |
FDS9933BZ |
Hersteller: Fairchild Semiconductor
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 4.9A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 10716 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
592+ | 0.83 EUR |
FDS9933BZ |
Hersteller: ONSEMI
Description: ONSEMI - FDS9933BZ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - FDS9933BZ - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 391 Stücke:
Lieferzeit 14-21 Tag (e)FDS9934C |
Hersteller: onsemi / Fairchild
MOSFET 20V Complementary PowerTrench
MOSFET 20V Complementary PowerTrench
auf Bestellung 19323 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.08 EUR |
10+ | 0.95 EUR |
100+ | 0.82 EUR |
500+ | 0.63 EUR |
1000+ | 0.56 EUR |
2500+ | 0.55 EUR |
5000+ | 0.54 EUR |
FDS9934C |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.56 EUR |
FDS9934C |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3643 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.37 EUR |
16+ | 1.11 EUR |
100+ | 0.87 EUR |
500+ | 0.73 EUR |
1000+ | 0.6 EUR |
FDS9934C |
Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R
auf Bestellung 592 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
171+ | 0.92 EUR |
173+ | 0.87 EUR |
207+ | 0.7 EUR |
250+ | 0.67 EUR |
500+ | 0.43 EUR |
FDS9934C |
Hersteller: ON Semiconductor
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC T/R
auf Bestellung 302500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
180+ | 0.87 EUR |
200+ | 0.76 EUR |
227+ | 0.64 EUR |
500+ | 0.49 EUR |
1000+ | 0.43 EUR |
2500+ | 0.41 EUR |
5000+ | 0.38 EUR |
10000+ | 0.37 EUR |
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