Suchergebnisse für "75gn60" : 16
Art der Ansicht :
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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APT75GN60BG | Microchip Technology |
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auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GN60LDQ3G | Microchip Technology |
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auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GN60SDQ2G | Microchip Technology |
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auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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APT75GN60BDQ2G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60BDQ2G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60BDQ2G | Microchip Technology |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60BG | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60BG | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60LDQ3G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60LDQ3G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60SDQ2G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||
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APT75GN60SDQ2G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
APT75GN60BG |
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Hersteller: Microchip Technology
IGBTs IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
IGBTs IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 11.16 EUR |
100+ | 9.66 EUR |
APT75GN60LDQ3G |
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Hersteller: Microchip Technology
IGBTs IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-264
IGBTs IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-264
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 16.51 EUR |
100+ | 14.27 EUR |
APT75GN60SDQ2G |
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Hersteller: Microchip Technology
IGBTs IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268
IGBTs IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 16.91 EUR |
100+ | 14.64 EUR |
APT75GN60BDQ2G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60BDQ2G |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60BDQ2G |
![]() |
Hersteller: Microchip Technology
IGBTs IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
IGBTs IGBT Fieldstop Low Frequency Single 600 V 75 A TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60BG |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60BG |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60LDQ3G |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60LDQ3G |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60SDQ2G |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
APT75GN60SDQ2G |
![]() |
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH