Hersteller: Alpha & Omega
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: DFN5X6
Drain-Source-Spannung Uds, V: -30 В
Drain-Strom Id, A: -85 A
Durchlasswiderstand Rds(on), Ohm: 4,5 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 3505/75
Montage: SMD

Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -67A; 33W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -67A
Power dissipation: 33W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 75nC

Hersteller: ALPHA&OMEGA
Transistor P-Channel MOSFET; 30V; 25V; 4,5mOhm; 85A; 83W; -55°C ~ 150°C; AON6407 TAON6407
Anzahl je Verpackung: 25 Stücke

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 32A/85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 15 V

Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 32A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3505 pF @ 15 V

Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 85A 8-Pin DFN EP T/R

Hersteller: Alpha? Semiconductor
N-канальний ПТ, Udss, В = 30, Id = 85, Ciss, пФ @ Uds, В = 3505 @ 15, Qg, нКл = 105 @ 10 В, Rds = 4,5 мОм @ 20 А, 10 В, Ugs(th) = 2,6 В @ 250 мкА, Р, Вт = 7,3 (Ta), 83 (Tc), Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: DFN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke

Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 85A 8-Pin DFN EP T/R

Hersteller: AOS
MOSFET P-CH 30V 32A/85A DFN-8 Транзистори