Hersteller: STM
N-кан. MOSFET 50V, 33A, 90Вт, 0.03Ом, -55...+150, TO-220 (STripFET MOSFET) Транзистори

Hersteller: CHIPNOBO
Transistor N-Channel MOSFET; 60V; 20V; 25mOhm; 48A; 100W; -55°C ~ 175°C; Equivalent: BUZ11-NR4941; BUZ11_NR4941; BUZ11-CN CHIPNOBO TBUZ11 CNB
Anzahl je Verpackung: 25 Stücke

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube

Hersteller: ON-Semiconductor
N-MOSFET 30A 50V 75W BUZ11 TBUZ11
Anzahl je Verpackung: 50 Stücke

Hersteller: ON-Semiconductor
N-MOSFET 30A 50V 75W BUZ11 TBUZ11
Anzahl je Verpackung: 50 Stücke

Hersteller: ON-Semiconductor
N-MOSFET 30A 50V 75W BUZ11 TBUZ11
Anzahl je Verpackung: 50 Stücke

Hersteller: ON-Semiconductor
N-MOSFET 30A 50V 75W BUZ11 TBUZ11
Anzahl je Verpackung: 50 Stücke

Hersteller: ON-Semiconductor
N-MOSFET 30A 50V 75W BUZ11 TBUZ11
Anzahl je Verpackung: 50 Stücke

Hersteller: ON-Semiconductor
N-MOSFET 30A 50V 75W BUZ11 TBUZ11
Anzahl je Verpackung: 50 Stücke

Hersteller: onsemi
MOSFETs N-Channel 50V 33A

Hersteller: onsemi
Description: MOSFET N-CH 50V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220 Tube

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220 Tube

Hersteller: ONSEMI
Description: ONSEMI - BUZ11-NR4941 - Leistungs-MOSFET, n-Kanal, 50 V, 30 A, 0.04 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 50V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 75W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.04ohm

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220 Tube

Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220 Tube

Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Power Dissipation (Max): 300W
Supplier Device Package: TO-263
Part Status: Active
Drain to Source Voltage (Vdss): 50 V

Hersteller: Siemens
Description: MOSFET N-CH 50V 80A TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A
Power Dissipation (Max): 300W
Supplier Device Package: TO-263
Part Status: Obsolete
Drain to Source Voltage (Vdss): 50 V

Hersteller: Siemens Wireless Modules
BUZ111SLE3045A

Hersteller: Infineon Technologies
BUZ111SL-E3045A

Hersteller: Harris Corporation
Description: N CHANNEL ENHANCEMENT-MODE TRANS
Packaging: Bulk
Part Status: Active

Hersteller: INFINEON
09+

Hersteller: INFINEON
09+

Hersteller: INFINEON
09+

Hersteller: INFINEON
09+

Hersteller: Createk Microelectronics
Transistor N-Channel MOSFET; 60V; 20V; 8mOhm; 80A; 115W; -55°C ~ 175°C; Equivalent: BUZ11-NR4941; BUZ11_NR4941; RDH11N06UB CREATEK TBUZ11 CRE
Anzahl je Verpackung: 25 Stücke

Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 50 V
Drain-Strom Idd, A: 30 A
Durchlasswiderstand Rds(on), Ohm: 0,04 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1500/ -
Montage: THT

Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 50 V
Drain-Strom Idd, A: 30 A
Durchlasswiderstand Rds(on), Ohm: 0,04 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1500/
Montage: THT

Transistoren > MOSFET N-CH

Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 50 V
Drain-Strom Idd, A: 26 A
Durchlasswiderstand Rds(on), Ohm: 0,055 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1400/
Montage: THT

Hersteller: STMicroelectronics
MOSFETs TO-220 N-CH 50V 33A

Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220 Tube

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220 Tube

Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 50V 30A 3-Pin(3+Tab) TO-220 Tube

Hersteller: onsemi
Description: MOSFET N-CH 50V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V

Hersteller: ONS/FAI
TO220 Транзистори