Hersteller: Infineon
2xP-MOSFET 5.2A 20V 2W 0.058Ω IRF7314 smd TIRF7314
Anzahl je Verpackung: 50 Stücke

Hersteller: UMW
Transistor 2xP-Channel MOSFET; 20V; 12V; 95mOhm; 5,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7314; IRF7314TR; SP001562198; SP001570224; IRF7314TR UMW TIRF7314 UMW
Anzahl je Verpackung: 25 Stücke

Hersteller: IR
Транз. Пол. ММ 2P-HEXFET logik SO8 Udss=-20V; Id=-5,3A; Pdmax=2W; Rds=0,058 Ohm

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs

Hersteller: IR
SO-8

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 20
Id,A: 5.3
Rds(on),Om: 0.058
Ciss, pF/Qg, nC: 780/19
Gebr.: 2P
/: SMD

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 20
Id,A: 5.3
Rds(on),Om: 0.058
Ciss, pF/Qg, nC: 780/19
/: SMD

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 20
Id,A: 5.3
Rds(on),Om: 0.058
Ciss, pF/Qg, nC: 780/19
Gebr.: 2P
/: SMD

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs

Hersteller: INFINEON TECHNOLOGIES
IRF7314TRPBF Multi channel transistors