Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 20 V
Drain-Strom Id, A: 5,3 A
Durchlasswiderstand Rds(on), Ohm: 0,058 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 780/19
Anmerkung: 2P
Montage: SMD

Hersteller: MIC
Tranzystor 2xP-Channel MOSFET; 20V; 12V; 95mOhm; 5,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7314; IRF7314TR; SP001562198; SP001570224; IRF7314TR TIRF7314 c
Anzahl je Verpackung: 100 Stücke

Hersteller: Infineon
2xP-MOSFET 5.2A 20V 2W 0.058Ω IRF7314 smd TIRF7314
Anzahl je Verpackung: 10 Stücke

Hersteller: JSMicro Semiconductor
Transistor 2xP-Channel MOSFET; 30V; 20V; 29mOhm; 9A; 2,1W; -55°C ~ 150°C; Equivalent: IRF7314; IRF7314TR; SP001562198; SP001570224; IRF7314TR JSMICRO TIRF7314 JSM
Anzahl je Verpackung: 50 Stücke

Hersteller: UMW
Transistor 2xP-Channel MOSFET; 20V; 12V; 95mOhm; 5,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7314; IRF7314TR; SP001562198; SP001570224; IRF7314TR UMW TIRF7314 UMW
Anzahl je Verpackung: 25 Stücke

Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC N T/R

Hersteller: JSMSEMI
Сдвоенный HEXFET SOIC-8 Транзистори

Hersteller: IR
SO-8

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 20 V
Drain-Strom Id, A: 5,3 A
Durchlasswiderstand Rds(on), Ohm: 0,058 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 780/19
Anmerkung: 2P
Montage: SMD

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 20 V
Drain-Strom Id, A: 5,3 A
Durchlasswiderstand Rds(on), Ohm: 0,058 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 780/19

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs

Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs

Hersteller: International Rectifier/Infineon
2P-канальний ПТ, Udss, В = 20, Id = 5,3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 780 @ 15, Qg, нКл = 29 @ 4,5 В, Rds = 58 мОм @ 2,9 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 0,7 В @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 100 Stücke

Hersteller: International Rectifier/Infineon
2P-канальний ПТ, Udss, В = 20, Id = 5,3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 780 @ 15, Qg, нКл = 29 @ 4,5 В, Rds = 58 мОм @ 2,9 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 700 мВ @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke

Hersteller: International Rectifier
Сдвоенный HEXFET 5-ого поколения с P-CH и низким сопротивл. с-и 0,058 Ом U=-20 В I=2,5 А SOIC8 Транзистори

Hersteller: International Rectifier/Infineon
2P-канальний ПТ, Udss, В = 20, Id = 5,3 А, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 780 @ 15, Qg, нКл = 29 @ 4,5 В, Rds = 58 мОм @ 2,9 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 700 мВ @ 250 мкА,... Транзистори Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 4000 Stücke

Hersteller: International Rectifier
Сдвоенный HEXFET 5-ого поколения с P-CH и низким сопротивл. с-и 0,058 Ом U=-20 В I=2,5 А SOIC-8 Транзистори

Hersteller: IR
Транз. Пол. МП 2P-HEXFET logik SO8 Udss=-20V; Id=-5,3A; Pdmax=2W; Rds=0,058 Ohm   Транзистори польові

Hersteller: IR
Транз. Пол. МП 2P-HEXFET logik SO8 Udss=-20V; Id=-5,3A; Pdmax=2W; Rds=0,058 Ohm   Транзистори польові