Hersteller: Siliconix
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 1000 В
Drain-Strom Idd, A: 2 A
Durchlasswiderstand Rds(on), Ohm: 5 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 980/80
Montage: THT

Hersteller: Vishay
Transistor N-Channel MOSFET; 1000V; 20V; 5Ohm; 3,1A; 125W; -55°C ~ 150°C; IRFBG30 TIRFBG30
Anzahl je Verpackung: 10 Stücke

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: Vishay Semiconductors
MOSFETs TO220 1KV 3.1A N-CH MOSFET

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

Hersteller: VISHAY
Description: VISHAY - IRFBG30PBF - Leistungs-MOSFET, n-Kanal, 1 kV, 3.1 A, 5 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 1kV
rohsCompliant: YES
Dauer-Drainstrom Id: 3.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 125W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5ohm

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

IRFBG30PBF Транзисторы HEXFET

Hersteller: STMicroelectronics
MOSFETs N-Ch 1000 Volt 3.5A Zener SuperMESH

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Drain-Source-Spannung Uds, V: 1000 V
Drain-Strom Idd, A: 3,1 A
Durchlasswiderstand Rds(on), Ohm: 5 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 980/80
Montage: THT

Verschiedene Bauteile > Verschiedene Bauteile 2

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V

Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT IRFB

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3.1A; 125W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.1A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V

Hersteller: Vishay
Trans MOSFET N-CH 1KV 3.1A 3-Pin(3+Tab) TO-220AB

Hersteller: Vishay / Siliconix
MOSFETs TO220 1KV 3.1A N-CH MOSFET

Hersteller: Vishay/IR
N-канальний ПТ, Udss, В = 1 000, Id = 3,1 А, Ptot, Вт = 125, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 980 @ 25, Qg, нКл = 80 @ 10 В, Rds = 5 Ом @ 1,9 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: TO-220AB Од. вим: шт
Anzahl je Verpackung: 50 Stücke

Hersteller: Vishay Siliconix
IRFBG30PBF MOSFET N-CH 1000V 3.1A TO-220AB Транзистори

Hersteller: Vishay
Транз. Пол. ВП N-HEXFET TO220AB Udss=1000V; Id=3,1A; Pdmax=125W; Rds=5,0 Ohm   Транзистори польові

Hersteller: Vishay Siliconix
SiHFBG30-E3 IRFBG30PBF MOSFET N-CH 1000V 3.1A TO-220AB Транзистори