Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 75 V
Idd,A: 209 A
Rds(on), Ohm: 4,5 mOhm
Ciss, pF/Qg, nC: 13000/410
JHGF: THT

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247AC
Uds,V: 75 V
Idd,A: 90 A
Rds(on), Ohm: 4,5 mOhm
Ciss, pF/Qg, nC: 7500/180
JHGF: THT

Hersteller: International Rectifier
Transistor N-Channel MOSFET; 75V; 20V; 4,5mOhm; 209A; 470W; -55°C ~ 175°C; IRFP2907 TIRFP2907
Anzahl je Verpackung: 5 Stücke

Hersteller: International Rectifier
Transistor N-Channel MOSFET; 75V; 20V; 4,5mOhm; 209A; 470W; -55°C ~ 175°C; IRFP2907 TIRFP2907
Anzahl je Verpackung: 5 Stücke

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement

Hersteller: Infineon Technologies
MOSFETs 75V 1 N-CH HEXFET 4.5mOhms 410nC

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 209A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: INFINEON
Description: INFINEON - IRFP2907PBF - Leistungs-MOSFET, HEXFET®, n-Kanal, 75 V, 209 A, 4500 µohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 75V
rohsCompliant: YES
Dauer-Drainstrom Id: 209A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 470W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 4500µohm
SVHC: No SVHC (25-Jun-2025)

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: International Rectifier
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Qualification: AEC-Q101

Hersteller: Infineon Technologies
Description: AUIRFP2907 - 75V-100V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V

Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 75
Idd,A: 209
Rds(on), Ohm: 0.0045
Ciss, pF/Qg, nC: 13000/620
JHGF: THT

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V

Hersteller: Infineon Technologies
PLANAR 40<-<100V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V

Hersteller: International Rectifier
Група товару: Транзистори Од. вим: шт

Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 75, Id = 209 А, Ciss, пФ @ Uds, В = 13000 @ 25, Qg, нКл = 620 @ 10 В, Rds = 4,5 мОм @ 125 A, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 470 Вт, Тексп, °C = -55...+175, Тип монт. = вивідний,... Група товару: Транзистори Корпус: TO-247
Anzahl je Verpackung: 25 Stücke

Hersteller: International Rectifier
MOSFET N-CH 75V 209A TO-247AC Група товару: Транзистори Од. вим: шт

Hersteller: International Rectifier
Група товару: Транзистори Од. вим: шт

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 90A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 170A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 90A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Hersteller: STM
(Близкий к IRFP2907) Група товару: Транзистори Од. вим: шт