Suchergebnisse für "IRL540" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 50
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 353
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 367
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 367
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 69
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 31
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 31
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 85
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 800
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 126
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 59
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 78
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 71
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRL540NPBF Produktcode: 25626
zu Favoriten hinzufügen
Lieblingsprodukt
|
IR |
![]() Gehäuse: TO-220 Uds,V: 100 Idd,A: 36 Rds(on), Ohm: 0.044 Ciss, pF/Qg, nC: 1800/74 Bem.: Керування логічним рівнем JHGF: THT |
verfügbar: 89 Stück
5 Stück - stock Köln
84 Stück - lieferbar in 3-4 Wochen |
|
||||||||||||||
![]() |
IRL540PBF Produktcode: 42050
zu Favoriten hinzufügen
Lieblingsprodukt
|
Vishay |
![]() Gehäuse: TO-220 Uds,V: 100 Idd,A: 28 Rds(on), Ohm: 0.077 Ciss, pF/Qg, nC: 2200/64 Bem.: Керування логічним рівнем JHGF: THT |
verfügbar: 6 Stück
|
|
||||||||||||||
IRL540 | Siliconix |
![]() Anzahl je Verpackung: 50 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
IRL540A | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V |
auf Bestellung 3058 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
IRL540A | FAIRCHILD |
![]() ![]() |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRL540A | FAIRCHILD |
![]() ![]() |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
![]() |
IRL540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 44mΩ Mounting: THT Gate charge: 49.3nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NPBF | Infineon Technologies |
![]() |
auf Bestellung 7698 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540NPBF | INFINEON |
![]() tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 1481 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NPBF | Infineon Technologies |
![]() |
auf Bestellung 2024 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IRL540NPBF | Infineon |
![]() |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
IRL540NSTRL | International Rectifier |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
IRL540NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 3.8W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 53 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 29600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 2549 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 29782 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 23200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 7200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 4660 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 7200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 609 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540NSTRLPBF | INFINEON |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 140W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: HEXFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NSTRLPBF | Infineon Technologies |
![]() |
auf Bestellung 609 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRL540PBF | VISHAY |
![]() |
auf Bestellung 869 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
IRL540PBF-BE3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540SPBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IRL540SPBF | Vishay |
![]() |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IRL540SPBF | Vishay |
![]() |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
IRL540NS |
![]() |
auf Bestellung 91 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IRL540NSC | IR |
auf Bestellung 2345 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IRL540S | IR |
![]() |
auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRL540SPBF | VISHAY |
![]() |
auf Bestellung 2600 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRL540NS Produktcode: 99527
zu Favoriten hinzufügen
Lieblingsprodukt
|
IR |
![]() ![]() Gehäuse: D2Pak (TO-263-3) Uds,V: 100 Idd,A: 36 Rds(on), Ohm: 0.044 Ciss, pF/Qg, nC: 1800/74 JHGF: SMD |
Produkt ist nicht verfügbar
|
|
||||||||||||||
![]() |
IRL540 | Vishay / Siliconix |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540A | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540L | Vishay Siliconix |
Description: MOSFET N-CH 100V 28A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Supplier Device Package: TO-262-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NL | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NLPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-262 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 44mΩ Mounting: THT Gate charge: 49.3nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NPBF | Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NPBF | Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NSPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NSTRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NSTRR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540NSTRRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540PBF | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540S | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRL540SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
IRL540SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRL540STRL | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IRL540STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
IRL540STRLPBF | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540STRLPBF | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
![]() |
IRL540STRR | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRL540NPBF Produktcode: 25626
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 100
Idd,A: 36
Rds(on), Ohm: 0.044
Ciss, pF/Qg, nC: 1800/74
Bem.: Керування логічним рівнем
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 100
Idd,A: 36
Rds(on), Ohm: 0.044
Ciss, pF/Qg, nC: 1800/74
Bem.: Керування логічним рівнем
JHGF: THT
verfügbar: 89 Stück
5 Stück - stock Köln
84 Stück - lieferbar in 3-4 Wochen
84 Stück - lieferbar in 3-4 Wochen
Anzahl | Preis |
---|---|
1+ | 0.6 EUR |
10+ | 0.56 EUR |
IRL540PBF Produktcode: 42050
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 100
Idd,A: 28
Rds(on), Ohm: 0.077
Ciss, pF/Qg, nC: 2200/64
Bem.: Керування логічним рівнем
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 100
Idd,A: 28
Rds(on), Ohm: 0.077
Ciss, pF/Qg, nC: 2200/64
Bem.: Керування логічним рівнем
JHGF: THT
verfügbar: 6 Stück
Anzahl | Preis |
---|---|
1+ | 0.92 EUR |
10+ | 0.84 EUR |
IRL540 |
![]() |
Hersteller: Siliconix
Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220 IRL540 TIRL540
Anzahl je Verpackung: 50 Stücke
Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220 IRL540 TIRL540
Anzahl je Verpackung: 50 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 2.21 EUR |
IRL540A |
![]() |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
auf Bestellung 3058 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
353+ | 1.29 EUR |
IRL540A |
![]() ![]() |
Hersteller: FAIRCHILD
IRL540A
IRL540A
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
367+ | 1.46 EUR |
500+ | 1.27 EUR |
1000+ | 1.13 EUR |
IRL540A |
![]() ![]() |
Hersteller: FAIRCHILD
IRL540A
IRL540A
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
367+ | 1.46 EUR |
500+ | 1.27 EUR |
1000+ | 1.13 EUR |
IRL540NPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NPBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFT 36A 49.3nC 44mOhm LogLvAB
MOSFETs MOSFT 36A 49.3nC 44mOhm LogLvAB
auf Bestellung 7698 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.78 EUR |
10+ | 1.33 EUR |
100+ | 1.19 EUR |
500+ | 0.94 EUR |
1000+ | 0.86 EUR |
2000+ | 0.84 EUR |
5000+ | 0.75 EUR |
IRL540NPBF |
![]() |
Hersteller: INFINEON
Description: INFINEON - IRL540NPBF - Leistungs-MOSFET, n-Kanal, 100 V, 36 A, 0.044 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 140W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IRL540NPBF - Leistungs-MOSFET, n-Kanal, 100 V, 36 A, 0.044 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 140W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 1481 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540NPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 2024 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
69+ | 2.07 EUR |
100+ | 1.9 EUR |
200+ | 1.07 EUR |
500+ | 0.92 EUR |
1000+ | 0.82 EUR |
2000+ | 0.67 EUR |
IRL540NPBF |
![]() |
Hersteller: Infineon
Транз. Пол. БМ N-MOSFET TO220AB Udss=100V; Id=36A; Pdmax=140W; Rds=0,044 Ohm Logic Level Gate
Транз. Пол. БМ N-MOSFET TO220AB Udss=100V; Id=36A; Pdmax=140W; Rds=0,044 Ohm Logic Level Gate
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.12 EUR |
IRL540NSTRL |
![]() |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 16V; 63mOhm; 36A; 140W; -55°C ~ 175°C; IRL540NS TIRL540ns
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 100V; 16V; 63mOhm; 36A; 140W; -55°C ~ 175°C; IRL540NS TIRL540ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.91 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.35 EUR |
36+ | 1.99 EUR |
53+ | 1.34 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.35 EUR |
36+ | 1.99 EUR |
53+ | 1.34 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 29600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.18 EUR |
1600+ | 1.16 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFT 100V 36A 44mOhm 49.3nC LogLvl
MOSFETs MOSFT 100V 36A 44mOhm 49.3nC LogLvl
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.8 EUR |
10+ | 2.52 EUR |
100+ | 1.83 EUR |
500+ | 1.26 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 29782 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.68 EUR |
10+ | 2.52 EUR |
100+ | 1.74 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 23200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 0.88 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 1.04 EUR |
1600+ | 0.99 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 7200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 0.88 EUR |
1600+ | 0.85 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: INFINEON
Description: INFINEON - IRL540NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 36 A, 0.044 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 140W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IRL540NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 36 A, 0.044 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 140W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4660 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
85+ | 1.69 EUR |
94+ | 1.47 EUR |
105+ | 1.27 EUR |
200+ | 1.14 EUR |
500+ | 0.86 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 7200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
800+ | 0.88 EUR |
1600+ | 0.85 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
126+ | 1.14 EUR |
IRL540NSTRLPBF |
![]() |
Hersteller: INFINEON
Description: INFINEON - IRL540NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 36 A, 0.044 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 140W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IRL540NSTRLPBF - Leistungs-MOSFET, n-Kanal, 100 V, 36 A, 0.044 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 36A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 140W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: HEXFET
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.044ohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540NSTRLPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 609 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540PBF |
![]() |
Hersteller: VISHAY
IRL540PBF THT N channel transistors
IRL540PBF THT N channel transistors
auf Bestellung 869 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.21 EUR |
89+ | 0.81 EUR |
94+ | 0.77 EUR |
IRL540PBF-BE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.19 EUR |
50+ | 2.61 EUR |
100+ | 2.36 EUR |
500+ | 1.92 EUR |
IRL540SPBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.7 EUR |
50+ | 2.89 EUR |
100+ | 2.61 EUR |
IRL540SPBF |
![]() |
Hersteller: Vishay
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
78+ | 1.83 EUR |
101+ | 1.37 EUR |
103+ | 1.3 EUR |
108+ | 1.18 EUR |
110+ | 1.11 EUR |
IRL540SPBF |
![]() |
Hersteller: Vishay
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 2.02 EUR |
IRL540NS | ![]() |
IRL540NS Транзисторы HEXFET
auf Bestellung 91 Stücke:
Lieferzeit 7-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540NSC |
Hersteller: IR
auf Bestellung 2345 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540S |
![]() |
Hersteller: IR
SOT263 10+
SOT263 10+
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540SPBF |
![]() |
Hersteller: VISHAY
auf Bestellung 2600 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRL540NS Produktcode: 99527
zu Favoriten hinzufügen
Lieblingsprodukt
|
![]() |
![]() |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 100
Idd,A: 36
Rds(on), Ohm: 0.044
Ciss, pF/Qg, nC: 1800/74
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2Pak (TO-263-3)
Uds,V: 100
Idd,A: 36
Rds(on), Ohm: 0.044
Ciss, pF/Qg, nC: 1800/74
JHGF: SMD
Produkt ist nicht verfügbar
Anzahl | Preis |
---|---|
1+ | 0.64 EUR |
10+ | 0.6 EUR |
IRL540 |
![]() |
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT IRL5
MOSFETs RECOMMENDED ALT IRL5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540A |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 14A, 5V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540L |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Supplier Device Package: TO-262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NL |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NSPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NSTRL |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NSTRR |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540NSTRRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 36A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540PBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540S |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540SPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540SPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540STRL |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540STRLPBF |
![]() |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540STRLPBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540STRLPBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRL540STRR |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]