Suchergebnisse für "LL024N" : 19

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IRLL024NPBF IRLL024NPBF
Produktcode: 114736
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IR irll024npbf-datasheet.pdf description Transistoren > MOSFET N-CH
Gehäuse: SOT-223
Uds,V: 55 V
Idd,A: 3 А
Rds(on), Ohm: 0,065 Ohm
Ciss, pF/Qg, nC: 510/10,4
Bem.: Керування логічним рівнем
JHGF: SMD
auf Bestellung 188 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLL024NTR AUIRLL024NTR Infineon Technologies AUIRLL024N.pdf Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6003 Stücke:
Lieferzeit 10-14 Tag (e)
397+1.15 EUR
Mindestbestellmenge: 397
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLL024NTR-IR AUIRLL024NTR-IR International Rectifier INFN-S-A0002298883-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3529 Stücke:
Lieferzeit 10-14 Tag (e)
397+1.15 EUR
Mindestbestellmenge: 397
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTR Infineon Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1765 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.9 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
95+0.76 EUR
105+0.68 EUR
122+0.59 EUR
211+0.34 EUR
224+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
95+0.76 EUR
105+0.68 EUR
122+0.59 EUR
211+0.34 EUR
224+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF IRLL024NTRPBF Infineon Technologies Infineon_IRLL024N_DS_v01_02_EN-3363573.pdf description MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl
auf Bestellung 3717 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.25 EUR
10+0.83 EUR
100+0.63 EUR
500+0.5 EUR
1000+0.45 EUR
2500+0.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF IRLL024NTRPBF Infineon Technologies irll024npbf.pdf?fileId=5546d462533600a401535664451725d3 description Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 87090 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
21+0.85 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF IRLL024NTRPBF Infineon Technologies irll024npbf.pdf?fileId=5546d462533600a401535664451725d3 description Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 86975 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.32 EUR
5000+0.3 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF Infineon irll024npbf.pdf?fileId=5546d462533600a401535664451725d3 description Транз. Пол. ММ MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl SOT-223-4
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
1+5.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHLL024NTRPBF
auf Bestellung 17000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Транзистор польовий IRLL024N 3.1A 55V N-ch SOT-223
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
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IRLL024N IRLL024N
Produktcode: 48944
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IR irll024n.pdf Transistoren > MOSFET N-CH
Gehäuse: SOT-223
Bem.: Керування логічним рівнем
JHGF: SMD
Produkt ist nicht verfügbar
1+0.57 EUR
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IRLL024NTRPBF IRLL024NTRPBF
Produktcode: 92254
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irll024npbf.pdf?fileId=5546d462533600a401535664451725d3 description Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AUIRLL024N AUIRLL024N Infineon Technologies AUIRLL024N.pdf Description: MOSFET N-CH 55V 3.1A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLL024NTR AUIRLL024NTR Infineon Technologies AUIRLL024N.pdf Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NPBF IRLL024NPBF Infineon Technologies irll024npbf.pdf?fileId=5546d462533600a401535664451725d3 description Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HTSW-112-07-T-D-LL-024 HTSW-112-07-T-D-LL-024 Samtec Inc. Description: CONN HEADER VERT 24POS 2.54MM
Packaging: Bulk
Connector Type: Header
Current Rating (Amps): Varies by Wire Gauge
Mounting Type: Through Hole
Number of Positions: 24
Number of Rows: 2
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 105°C
Contact Type: Male Pin
Fastening Type: Push-Pull
Number of Positions Loaded: 23
Termination: Kinked Pin, Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Natural
Pitch - Mating: 0.100" (2.54mm)
Contact Finish - Mating: Tin
Contact Finish - Post: Tin
Part Status: Active
Contact Shape: Square
Contact Length - Post: 0.100" (2.54mm)
Insulation Height: 0.100" (2.54mm)
Shrouding: Unshrouded
Overall Contact Length: 0.430" (10.92mm)
Insulation Material: Liquid Crystal Polymer (LCP)
Row Spacing - Mating: 0.100" (2.54mm)
Contact Length - Mating: 0.230" (5.84mm)
Produkt ist nicht verfügbar
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IRLL024NPBF
Produktcode: 114736
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description irll024npbf-datasheet.pdf
IRLL024NPBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SOT-223
Uds,V: 55 V
Idd,A: 3 А
Rds(on), Ohm: 0,065 Ohm
Ciss, pF/Qg, nC: 510/10,4
Bem.: Керування логічним рівнем
JHGF: SMD
auf Bestellung 188 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLL024NTR AUIRLL024N.pdf
AUIRLL024NTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
397+1.15 EUR
Mindestbestellmenge: 397
Im Einkaufswagen  Stück im Wert von  UAH
AUIRLL024NTR-IR INFN-S-A0002298883-1.pdf?t.download=true&u=5oefqw
AUIRLL024NTR-IR
Hersteller: International Rectifier
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
397+1.15 EUR
Mindestbestellmenge: 397
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTR
Hersteller: Infineon
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1765 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+0.9 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
95+0.76 EUR
105+0.68 EUR
122+0.59 EUR
211+0.34 EUR
224+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.94 EUR
95+0.76 EUR
105+0.68 EUR
122+0.59 EUR
211+0.34 EUR
224+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description Infineon_IRLL024N_DS_v01_02_EN-3363573.pdf
IRLL024NTRPBF
Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl
auf Bestellung 3717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.25 EUR
10+0.83 EUR
100+0.63 EUR
500+0.5 EUR
1000+0.45 EUR
2500+0.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description irll024npbf.pdf?fileId=5546d462533600a401535664451725d3
IRLL024NTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 87090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
21+0.85 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRLL024NTRPBF description irll024npbf.pdf?fileId=5546d462533600a401535664451725d3
IRLL024NTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 86975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.32 EUR
5000+0.3 EUR
Mindestbestellmenge: 2500
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IRLL024NTRPBF description irll024npbf.pdf?fileId=5546d462533600a401535664451725d3
Hersteller: Infineon
Транз. Пол. ММ MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl SOT-223-4
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+5.5 EUR
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SIHLL024NTRPBF
auf Bestellung 17000 Stücke:
Lieferzeit 21-28 Tag (e)
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Транзистор польовий IRLL024N 3.1A 55V N-ch SOT-223
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
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IRLL024N
Produktcode: 48944
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irll024n.pdf
IRLL024N
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SOT-223
Bem.: Керування логічним рівнем
JHGF: SMD
Produkt ist nicht verfügbar
Anzahl Preis
1+0.57 EUR
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IRLL024NTRPBF
Produktcode: 92254
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description irll024npbf.pdf?fileId=5546d462533600a401535664451725d3
IRLL024NTRPBF
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AUIRLL024N AUIRLL024N.pdf
AUIRLL024N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRLL024NTR AUIRLL024N.pdf
AUIRLL024NTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRLL024NPBF description irll024npbf.pdf?fileId=5546d462533600a401535664451725d3
IRLL024NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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HTSW-112-07-T-D-LL-024
HTSW-112-07-T-D-LL-024
Hersteller: Samtec Inc.
Description: CONN HEADER VERT 24POS 2.54MM
Packaging: Bulk
Connector Type: Header
Current Rating (Amps): Varies by Wire Gauge
Mounting Type: Through Hole
Number of Positions: 24
Number of Rows: 2
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 105°C
Contact Type: Male Pin
Fastening Type: Push-Pull
Number of Positions Loaded: 23
Termination: Kinked Pin, Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Natural
Pitch - Mating: 0.100" (2.54mm)
Contact Finish - Mating: Tin
Contact Finish - Post: Tin
Part Status: Active
Contact Shape: Square
Contact Length - Post: 0.100" (2.54mm)
Insulation Height: 0.100" (2.54mm)
Shrouding: Unshrouded
Overall Contact Length: 0.430" (10.92mm)
Insulation Material: Liquid Crystal Polymer (LCP)
Row Spacing - Mating: 0.100" (2.54mm)
Contact Length - Mating: 0.230" (5.84mm)
Produkt ist nicht verfügbar
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