Suchergebnisse für "LL024N" : 21
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Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 484
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 484
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 50
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 50
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Stück im Wert von UAH
Mindestbestellmenge: 77
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 77
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 11
Im Einkaufswagen
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Mindestbestellmenge: 2
Im Einkaufswagen
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Mindestbestellmenge: 2500
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRLL024NPBF Produktcode: 114736
zu Favoriten hinzufügen
Lieblingsprodukt
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IR |
![]() ![]() Uds,V: 55 V Idd,A: 3 А Rds(on), Ohm: 0,065 Ohm Ciss, pF/Qg, nC: 510/10,4 Bem.: Керування логічним рівнем JHGF: SMD |
auf Bestellung 427 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRLL024NTR | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6003 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRLL024NTR-IR | International Rectifier |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3529 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL024NTR | Infineon |
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL024NTR | Infineon |
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 4520 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2277 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL024NTRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 4.4A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 65mΩ Mounting: SMD Gate charge: 10.4nC Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2277 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLL024NTRPBF | Infineon Technologies |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 101406 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL024NTRPBF | Infineon Technologies |
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auf Bestellung 14781 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL024NTRPBF | Infineon Technologies |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHLL024NTRPBF |
auf Bestellung 17000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
Транзистор польовий IRLL024N 3.1A 55V N-ch SOT-223 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRLL024N Produktcode: 48944
zu Favoriten hinzufügen
Lieblingsprodukt
|
IR |
![]() Gehäuse: SOT-223 Bem.: Керування логічним рівнем JHGF: SMD |
Produkt ist nicht verfügbar
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IRLL024NTRPBF Produktcode: 92254
zu Favoriten hinzufügen
Lieblingsprodukt
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Produkt ist nicht verfügbar
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Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AUIRLL024N | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRLL024NTR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLL024NPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HTSW-112-07-T-D-LL-024 | Samtec Inc. |
Description: CONN HEADER VERT 24POS 2.54MM Packaging: Bulk Connector Type: Header Current Rating (Amps): Varies by Wire Gauge Mounting Type: Through Hole Number of Positions: 24 Number of Rows: 2 Style: Board to Board or Cable Operating Temperature: -55°C ~ 105°C Contact Type: Male Pin Fastening Type: Push-Pull Number of Positions Loaded: 23 Termination: Kinked Pin, Solder Material Flammability Rating: UL94 V-0 Contact Material: Phosphor Bronze Insulation Color: Natural Pitch - Mating: 0.100" (2.54mm) Contact Finish - Mating: Tin Contact Finish - Post: Tin Part Status: Active Contact Shape: Square Contact Length - Post: 0.100" (2.54mm) Insulation Height: 0.100" (2.54mm) Shrouding: Unshrouded Overall Contact Length: 0.430" (10.92mm) Insulation Material: Liquid Crystal Polymer (LCP) Row Spacing - Mating: 0.100" (2.54mm) Contact Length - Mating: 0.230" (5.84mm) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
L024N002ATMIET0000 | Vishay / Dale | LCD Character Display Modules & Accessories CUSTOM LCD DISPLAY THINKLOGICA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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L024N002AYYHET0000 | Vishay / Dale | LCD Character Display Modules & Accessories Yel/Grn Transflect Yel/Grn LED |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRLL024NPBF Produktcode: 114736
zu Favoriten hinzufügen
Lieblingsprodukt
|
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Hersteller: IR
Transistoren > MOSFET N-CH
Uds,V: 55 V
Idd,A: 3 А
Rds(on), Ohm: 0,065 Ohm
Ciss, pF/Qg, nC: 510/10,4
Bem.: Керування логічним рівнем
JHGF: SMD
Transistoren > MOSFET N-CH
Uds,V: 55 V
Idd,A: 3 А
Rds(on), Ohm: 0,065 Ohm
Ciss, pF/Qg, nC: 510/10,4
Bem.: Керування логічним рівнем
JHGF: SMD
auf Bestellung 427 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AUIRLL024NTR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6003 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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484+ | 1.04 EUR |
AUIRLL024NTR-IR |
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Hersteller: International Rectifier
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3529 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
484+ | 1.04 EUR |
IRLL024NTR |
Hersteller: Infineon
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024
Anzahl je Verpackung: 50 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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50+ | 0.73 EUR |
IRLL024NTR |
Hersteller: Infineon
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 55V; 16V; 100mOhm; 4,4A; 2,1W; -55°C ~ 150°C; IRLL024N smd TIRLL024
Anzahl je Verpackung: 50 Stücke
auf Bestellung 4520 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
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50+ | 0.73 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
204+ | 0.35 EUR |
215+ | 0.33 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2277 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
204+ | 0.35 EUR |
215+ | 0.33 EUR |
7500+ | 0.32 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 101406 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.64 EUR |
18+ | 1.02 EUR |
100+ | 0.67 EUR |
500+ | 0.51 EUR |
1000+ | 0.47 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: Infineon Technologies
MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl
MOSFETs MOSFT 55V 4.4A 65mOhm 10.4nC LogLvl
auf Bestellung 14781 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.61 EUR |
10+ | 0.95 EUR |
100+ | 0.66 EUR |
500+ | 0.51 EUR |
1000+ | 0.46 EUR |
2500+ | 0.43 EUR |
25000+ | 0.35 EUR |
IRLL024NTRPBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.45 EUR |
5000+ | 0.44 EUR |
SIHLL024NTRPBF |
auf Bestellung 17000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
Транзистор польовий IRLL024N 3.1A 55V N-ch SOT-223 |
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IRLL024N Produktcode: 48944
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Lieblingsprodukt
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Produkt ist nicht verfügbar
Anzahl | Preis |
---|---|
1+ | 0.57 EUR |
IRLL024NTRPBF Produktcode: 92254
zu Favoriten hinzufügen
Lieblingsprodukt
|
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![]() |
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLL024N |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 3.1A SOT-223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLL024NTR |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLL024NPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HTSW-112-07-T-D-LL-024 |
Hersteller: Samtec Inc.
Description: CONN HEADER VERT 24POS 2.54MM
Packaging: Bulk
Connector Type: Header
Current Rating (Amps): Varies by Wire Gauge
Mounting Type: Through Hole
Number of Positions: 24
Number of Rows: 2
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 105°C
Contact Type: Male Pin
Fastening Type: Push-Pull
Number of Positions Loaded: 23
Termination: Kinked Pin, Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Natural
Pitch - Mating: 0.100" (2.54mm)
Contact Finish - Mating: Tin
Contact Finish - Post: Tin
Part Status: Active
Contact Shape: Square
Contact Length - Post: 0.100" (2.54mm)
Insulation Height: 0.100" (2.54mm)
Shrouding: Unshrouded
Overall Contact Length: 0.430" (10.92mm)
Insulation Material: Liquid Crystal Polymer (LCP)
Row Spacing - Mating: 0.100" (2.54mm)
Contact Length - Mating: 0.230" (5.84mm)
Description: CONN HEADER VERT 24POS 2.54MM
Packaging: Bulk
Connector Type: Header
Current Rating (Amps): Varies by Wire Gauge
Mounting Type: Through Hole
Number of Positions: 24
Number of Rows: 2
Style: Board to Board or Cable
Operating Temperature: -55°C ~ 105°C
Contact Type: Male Pin
Fastening Type: Push-Pull
Number of Positions Loaded: 23
Termination: Kinked Pin, Solder
Material Flammability Rating: UL94 V-0
Contact Material: Phosphor Bronze
Insulation Color: Natural
Pitch - Mating: 0.100" (2.54mm)
Contact Finish - Mating: Tin
Contact Finish - Post: Tin
Part Status: Active
Contact Shape: Square
Contact Length - Post: 0.100" (2.54mm)
Insulation Height: 0.100" (2.54mm)
Shrouding: Unshrouded
Overall Contact Length: 0.430" (10.92mm)
Insulation Material: Liquid Crystal Polymer (LCP)
Row Spacing - Mating: 0.100" (2.54mm)
Contact Length - Mating: 0.230" (5.84mm)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
L024N002ATMIET0000 |
Hersteller: Vishay / Dale
LCD Character Display Modules & Accessories CUSTOM LCD DISPLAY THINKLOGICA
LCD Character Display Modules & Accessories CUSTOM LCD DISPLAY THINKLOGICA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
L024N002AYYHET0000 |
Hersteller: Vishay / Dale
LCD Character Display Modules & Accessories Yel/Grn Transflect Yel/Grn LED
LCD Character Display Modules & Accessories Yel/Grn Transflect Yel/Grn LED
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH