Hersteller: ON
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-204AC
Sperrspannung Vrr, V: 600 В
Mittlerer Strom Iav, A: 1 А
Sperrverzögerungszeit Trr, ns: 50 ns
Montage: THT

Hersteller: MOT
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-204AC
Sperrspannung Vrr, V: 600 V
Mittlerer Strom Iav, A: 1 A
Sperrverzögerungszeit Trr, ns: 60 ns
Montage: THT

Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 32A; DO41; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 32A
Case: DO41
Max. forward voltage: 1.25V

Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 32A; DO41; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: Ammo Pack
Max. forward impulse current: 32A
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Leakage current: 5µA
Max. load current: 6A

Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 35A; DO41; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns

Hersteller: LGE
1A; 600V; packaging: ammo; MUR160 DO41 LGE rectifier diode DP MUR160
Anzahl je Verpackung: 500 Stücke

Hersteller: Diotec Semiconductor
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: Diodes Incorporated
Rectifiers FRED GPP Rectifier DO-41 T&R 5K

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: Diotec Semiconductor
Rectifiers Diode, Superfast, DO-41, 600V, 1A, 175C

Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: Taiwan Semiconductor
Rectifiers 50ns, 1A, 600V, High Efficient Recovery Rectifier

Hersteller: Diodes Incorporated
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: Diodes Zetex
Diode Switching 600V 1A 2-Pin DO-41

Hersteller: Good-Ark
Diode Switching 600V 1A 2-Pin DO-15

Hersteller: Diotec Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 Ammo

Hersteller: Good-Ark
Diode Switching 600V 1A 2-Pin DO-15

Hersteller: Diodes Zetex
Diode Switching 600V 1A 2-Pin DO-41

Hersteller: Diotec Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 Ammo

Hersteller: LGE
Ultrafast 1A, 600V, 50ns, DO-41 (корпус 59-10) Діоди та діодні збірки

Hersteller: TAIWAN SEMICONDUCTOR
Description: TAIWAN SEMICONDUCTOR - MUR160 - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 1 A, Einfach, 1.35 V, 60 ns, 35 A
tariffCode: 85411000
Bauform - Diode: DO-41 (DO-204AL)
Durchlassstoßstrom: 35A
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchlassspannung, max.: 1.35V
Sperrverzögerungszeit: 60ns
Durchschnittlicher Durchlassstrom: 1A
SVHC: No SVHC (17-Jan-2023)
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
usEccn: EAR99
Periodische Spitzensperrspannung: 600V
Betriebstemperatur, max.: 175°C

Hersteller: Diodes Zetex
Diode Switching 600V 1A 2-Pin DO-41

Hersteller: Taiwan Semiconductor
Rectifiers 50ns 1A 600V High Ef f Recovery Rectifier

Hersteller: Taiwan Semiconductor
Rectifiers 50ns, 1A, 600V, High Efficient Recovery Rectifier

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: Taiwan Semiconductor
Rectifiers 50ns 1A 600V High Ef f Recovery Rectifie

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101

Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 1.25V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 1.25V
Reverse recovery time: 50ns

Hersteller: onsemi
Rectifiers 600V 1A UltraFast

Hersteller: onsemi
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 Bag

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 Bag

Hersteller: MULTICOMP PRO
Description: MULTICOMP PRO - MUR160G - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 1.35 A, Einfach, 1.35 V, 60 ns, 35 A
tariffCode: 85411000
Bauform - Diode: DO-41 (DO-204AL)
Durchlassstoßstrom: 35A
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchlassspannung, max.: 1.35V
Sperrverzögerungszeit: 60ns
Durchschnittlicher Durchlassstrom: 1.35A
SVHC: Lead (25-Jun-2025)
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
usEccn: EAR99
Periodische Spitzensperrspannung: 600V
Betriebstemperatur, max.: 175°C

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 Bag

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 Bag

Hersteller: ONSEMI
Description: ONSEMI - MUR160G - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 1 A, Einfach, 1.25 V, 50 ns, 35 A
tariffCode: 85411000
Bauform - Diode: Axial bedrahtet
Durchlassstoßstrom: 35A
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchlassspannung, max.: 1.25V
Sperrverzögerungszeit: 50ns
Durchschnittlicher Durchlassstrom: 1A
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 2 Pins
Produktpalette: MUR16
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 600V
Betriebstemperatur, max.: 175°C

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101

Hersteller: Panjit International Inc.
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: onsemi
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: onsemi
Description: DIODE STANDARD 600V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V

Hersteller: onsemi
Rectifiers 600V 1A UltraFast

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 T/R

Hersteller: ONSEMI
Description: ONSEMI - MUR160RLG - Diode mit kurzer/ultrakurzer Erholzeit, 600 V, 1 A, Einfach, 1.25 V, 75 ns, 35 A
tariffCode: 85411000
Bauform - Diode: DO-41 (DO-204AL)
Durchlassstoßstrom: 35A
euEccn: NLR
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: -
isCanonical: Y
Durchlassspannung, max.: 1.25V
Sperrverzögerungszeit: 75ns
Durchschnittlicher Durchlassstrom: 1A
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Periodische Spitzensperrspannung: 600V
Betriebstemperatur, max.: 175°C

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 T/R

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 T/R

Hersteller: ON Semiconductor
Diode Switching 600V 1A 2-Pin DO-41 T/R

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V

Hersteller: Taiwan Semiconductor
Rectifiers 50ns, 1A, 600V, High Efficient Recovery Rectifier

Hersteller: Taiwan Semiconductor
Diode Switching 600V 1A 2-Pin SMB T/R

Hersteller: Taiwan Semiconductor
Diode Switching 600V 1A 2-Pin SMB T/R

Hersteller: Taiwan Semiconductor
Rectifiers 50ns, 1A, 600V, High Efficient Recovery Rectifier

Hersteller: Taiwan Semiconductor
Diode Switching 600V 1A 2-Pin SMB T/R

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101

MUR160 Диоды

Hersteller: Taiwan Semiconductor
Випрямний ультрашвидкий діод вивідний, Uзвор, В = 600, Io, А = 1, Uf (max), В = 1,25, If, A = 1, trr, нс = 75, Тексп, °C = -65...+175,... Діоди Корпус: DO-15 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke