Suchergebnisse für "n4448" : > 60

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1N4448 1N4448
Produktcode: 20338 		YJ/Philips 1n4448-datasheet.pdf Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-35 (DO-204AH, SOD27)
Urev.,V: 100
Iausricht.,А: 01.02.2000
Beschreibung: Schneller
Austauschbar: 1N4148
Монтаж: THT
Падіння напруги Vf: 1 V
verfügbar: 9554 Stück
1+0.02 EUR
10+ 0.016 EUR
100+ 0.0099 EUR
1000+ 0.0078 EUR
1N4448W 1N4448W
Produktcode: 160505 		Yangjie 1n4448w-sod123-datasheet.pdf Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: SOD-123
Urev.,V: 100 V
Iausricht.,А: 0,25 A
Монтаж: SMD
Падіння напруги Vf: 1 V
auf Bestellung 2760 Stück:
Lieferzeit 21-28 Tag (e)
1N4448WS 1N4448WS
Produktcode: 160506 		Yangjie 1n4448ws-sod323.pdf Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: SOD-323
Urev.,V: 75 V
Iausricht.,А: 0,25 A
Beschreibung: Комутуючий діод швидкий TRR: 4 ns
Монтаж: SMD
Падіння напруги Vf: 1 V
erwartet: 600 Stück
1N4448 1N4448 DIOTEC SEMICONDUCTOR 1n4148.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 15108 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1725+ 0.041 EUR
1985+ 0.036 EUR
2393+ 0.03 EUR
2841+ 0.025 EUR
3425+ 0.021 EUR
4274+ 0.017 EUR
7937+ 0.009 EUR
8475+ 0.0084 EUR
Mindestbestellmenge: 625
1N4448 1N4448 CDIL 1N4148_1n4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 7867 Stücke:
Lieferzeit 14-21 Tag (e)
604+0.12 EUR
1064+ 0.067 EUR
1812+ 0.039 EUR
2526+ 0.028 EUR
3013+ 0.024 EUR
3624+ 0.02 EUR
7867+ 0.0092 EUR
Mindestbestellmenge: 604
1N4448 1N4448 ONSEMI 1n4448-f.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 5602 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
3497+ 0.02 EUR
4546+ 0.016 EUR
Mindestbestellmenge: 556
1N4448 1N4448 DC COMPONENTS 1N41xx_1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
475+0.16 EUR
Mindestbestellmenge: 475
1N4448 1N4448 CDIL 1N4148_1n4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7867 Stücke:
Lieferzeit 7-14 Tag (e)
604+0.12 EUR
1064+ 0.067 EUR
1812+ 0.039 EUR
2526+ 0.028 EUR
3013+ 0.024 EUR
3624+ 0.02 EUR
7867+ 0.0092 EUR
Mindestbestellmenge: 604
1N4448 1N4448 DC COMPONENTS 1N41xx_1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)
475+0.16 EUR
1000+ 0.072 EUR
1553+ 0.046 EUR
Mindestbestellmenge: 475
1N4448 1N4448 DIOTEC SEMICONDUCTOR 1n4148.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15108 Stücke:
Lieferzeit 7-14 Tag (e)
625+0.11 EUR
1725+ 0.041 EUR
1985+ 0.036 EUR
2393+ 0.03 EUR
2841+ 0.025 EUR
3425+ 0.021 EUR
4274+ 0.017 EUR
Mindestbestellmenge: 625
1N4448 1N4448 ONSEMI 1n4448-f.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5602 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
Mindestbestellmenge: 556
1N4448 Diotec Semiconductor 1n4148.pdf Description: DIODE GEN PURP 75V 0.2A DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.018 EUR
10000+ 0.015 EUR
Mindestbestellmenge: 5000
1N4448 1N4448 Diotec Semiconductor 1n914-d.pdf ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw 1n4148.pdf Diodes - General Purpose, Power, Switching Small Signal Diode, DO-35, 100V, 0.2A, 175C
auf Bestellung 23141 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.16 EUR
44+ 0.065 EUR
100+ 0.055 EUR
500+ 0.042 EUR
1000+ 0.037 EUR
5000+ 0.028 EUR
10000+ 0.018 EUR
Mindestbestellmenge: 18
1N4448 1N4448 Fairchild Semiconductor ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw Description: HIGH CONDUCTANCE FAST DIODE
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 115764 Stücke:
Lieferzeit 10-14 Tag (e)
11539+0.049 EUR
Mindestbestellmenge: 11539
1N4448 1N4448 onsemi 1n914-d.pdf Description: SMALL SGNL DIODE DO35 100V 175C
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 95242 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
162+ 0.11 EUR
301+ 0.059 EUR
500+ 0.046 EUR
1000+ 0.032 EUR
2000+ 0.026 EUR
5000+ 0.025 EUR
10000+ 0.021 EUR
50000+ 0.017 EUR
Mindestbestellmenge: 112
1N4448 1N4448 onsemi / Fairchild 1N914_D-2309448.pdf Diodes - General Purpose, Power, Switching Hi Conductance Fast
auf Bestellung 54947 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.16 EUR
27+ 0.11 EUR
100+ 0.046 EUR
1000+ 0.028 EUR
5000+ 0.023 EUR
10000+ 0.019 EUR
25000+ 0.018 EUR
Mindestbestellmenge: 18
1N4448 LGE 1n914-d.pdf ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw 1n4148.pdf Імпульсний діод вивідний; Ur, В = 100; Iо, A = 0,15; If, A = 0,15; Uf, В = 1; Тексп, °С = -65...+175; DO-35
auf Bestellung 2384 Stücke:
Lieferzeit 14-21 Tag (e)
134+0.05 EUR
148+ 0.041 EUR
167+ 0.035 EUR
Mindestbestellmenge: 134
1N4448 Philips 1n914-d.pdf ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw 1n4148.pdf Диод ММ DO35 U=75V I=0,2A
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
2+0.033 EUR
10+ 0.029 EUR
Mindestbestellmenge: 2
1N4448 A0 1N4448 A0 TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
469+ 0.15 EUR
521+ 0.14 EUR
782+ 0.092 EUR
800+ 0.089 EUR
Mindestbestellmenge: 417
1N4448 A0 1N4448 A0 TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
417+0.17 EUR
469+ 0.15 EUR
521+ 0.14 EUR
782+ 0.092 EUR
800+ 0.089 EUR
Mindestbestellmenge: 417
1N4448 A0G 1N4448 A0G TAIWAN SEMICONDUCTOR 1N4148%20SERIES_J1804.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.19 EUR
Mindestbestellmenge: 60
1N4448 A0G 1N4448 A0G TAIWAN SEMICONDUCTOR 1N4148%20SERIES_J1804.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
60+1.19 EUR
100+ 0.72 EUR
250+ 0.29 EUR
500+ 0.14 EUR
Mindestbestellmenge: 60
1N4448 A0G 1N4448 A0G Taiwan Semiconductor 1n414820series_j1804.pdf Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
1N4448HLP-7 1N4448HLP-7 DIODES INCORPORATED ds30590.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
auf Bestellung 4180 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
755+ 0.095 EUR
855+ 0.084 EUR
990+ 0.073 EUR
1045+ 0.069 EUR
Mindestbestellmenge: 325
1N4448HLP-7 1N4448HLP-7 DIODES INCORPORATED ds30590.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4180 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
755+ 0.095 EUR
855+ 0.084 EUR
990+ 0.073 EUR
1045+ 0.069 EUR
Mindestbestellmenge: 325
1N4448HLP-7 1N4448HLP-7 Diodes Incorporated ds30590.pdf Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 8886000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
9000+ 0.15 EUR
30000+ 0.14 EUR
75000+ 0.12 EUR
Mindestbestellmenge: 3000
1N4448HLP-7 1N4448HLP-7 Diodes Incorporated ds30590.pdf Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 8890955 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
38+ 0.47 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 29
1N4448HLP-7 1N4448HLP-7 Diodes Incorporated ds30590.pdf Diodes - General Purpose, Power, Switching 80V 125mA
auf Bestellung 10080 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.61 EUR
10+ 0.46 EUR
100+ 0.24 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
3000+ 0.16 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 5
1N4448HLP-7 1N4448HLP-7 Diodes Inc ds30590.pdf Rectifier Diode Small Signal Switching 80V 0.3A 4ns 2-Pin X1-DFN T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
1N4448HWS-13-F 1N4448HWS-13-F Diodes Incorporated ds30196.pdf Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 750000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.084 EUR
30000+ 0.082 EUR
50000+ 0.068 EUR
Mindestbestellmenge: 10000
1N4448HWS-13-F 1N4448HWS-13-F Diodes Incorporated ds30196.pdf Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 756965 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
45+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.097 EUR
Mindestbestellmenge: 32
1N4448HWS-13-F Diodes Incorporated DIODS20367_1-2541790.pdf Diodes - General Purpose, Power, Switching 80 Vrrm 57Vr 250 mA FAST SWITCH DIODE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.56 EUR
10+ 0.39 EUR
100+ 0.16 EUR
1000+ 0.1 EUR
2500+ 0.099 EUR
Mindestbestellmenge: 6
1N4448HWS-7-F 1N4448HWS-7-F DIODES INCORPORATED 1N4448HWS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
2175+0.033 EUR
2450+ 0.029 EUR
2750+ 0.026 EUR
2850+ 0.025 EUR
3000+ 0.024 EUR
Mindestbestellmenge: 2175
1N4448HWS-7-F 1N4448HWS-7-F DIODES INCORPORATED 1N4448HWS.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 3500 Stücke:
Lieferzeit 7-14 Tag (e)
2175+0.033 EUR
2450+ 0.029 EUR
2750+ 0.026 EUR
2850+ 0.025 EUR
3000+ 0.024 EUR
12000+ 0.023 EUR
Mindestbestellmenge: 2175
1N4448HWS-7-F 1N4448HWS-7-F Diodes Incorporated DIODS20367_1-2541790.pdf Diodes - General Purpose, Power, Switching Vr/90V Io/250mA T/R
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8+0.36 EUR
12+ 0.24 EUR
100+ 0.1 EUR
1000+ 0.074 EUR
3000+ 0.058 EUR
9000+ 0.048 EUR
24000+ 0.046 EUR
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1N4448HWS-7-F 1N4448HWS-7-F Diodes Incorporated ds30196.pdf Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 375000 Stücke:
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3000+0.064 EUR
6000+ 0.059 EUR
9000+ 0.049 EUR
30000+ 0.048 EUR
75000+ 0.043 EUR
150000+ 0.038 EUR
Mindestbestellmenge: 3000
1N4448HWS-7-F 1N4448HWS-7-F Diodes Incorporated ds30196.pdf Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 376614 Stücke:
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68+ 0.26 EUR
139+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
Mindestbestellmenge: 46
1N4448HWSQ-7-F Diodes Incorporated DIODS20367_1-2541790.pdf Diodes - General Purpose, Power, Switching Fast Switching Diode SOD323 T&R 3K
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7+0.41 EUR
10+ 0.29 EUR
100+ 0.14 EUR
1000+ 0.083 EUR
3000+ 0.06 EUR
9000+ 0.053 EUR
24000+ 0.048 EUR
Mindestbestellmenge: 7
1N4448HWSQ-7-F 1N4448HWSQ-7-F Diodes Incorporated ds30196.pdf Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 1266000 Stücke:
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3000+0.07 EUR
6000+ 0.065 EUR
9000+ 0.054 EUR
30000+ 0.053 EUR
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150000+ 0.041 EUR
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1N4448HWSQ-7-F 1N4448HWSQ-7-F Diodes Incorporated ds30196.pdf Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Reverse Recovery Time (trr): 4 ns
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1266000 Stücke:
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44+0.4 EUR
62+ 0.29 EUR
126+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.081 EUR
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1N4448HWT-7 1N4448HWT-7 DIODES INCORPORATED 1N4448HWT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
1475+0.049 EUR
1925+ 0.037 EUR
2175+ 0.033 EUR
2525+ 0.028 EUR
2650+ 0.027 EUR
Mindestbestellmenge: 1475
1N4448HWT-7 1N4448HWT-7 DIODES INCORPORATED 1N4448HWT.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)
1475+0.049 EUR
1925+ 0.037 EUR
2175+ 0.033 EUR
2525+ 0.028 EUR
2650+ 0.027 EUR
Mindestbestellmenge: 1475
1N4448HWT-7 1N4448HWT-7 Diodes Incorporated 1N4448HWT.pdf Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 4821000 Stücke:
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6000+ 0.075 EUR
9000+ 0.063 EUR
30000+ 0.061 EUR
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150000+ 0.048 EUR
Mindestbestellmenge: 3000
1N4448HWT-7 1N4448HWT-7 Diodes Incorporated 1N4448HWT.pdf Diodes - General Purpose, Power, Switching 100 Vrm 80 Vrrm 57v Rms 250mA IFM
auf Bestellung 202489 Stücke:
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6+0.56 EUR
10+ 0.39 EUR
100+ 0.19 EUR
1000+ 0.11 EUR
3000+ 0.097 EUR
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24000+ 0.072 EUR
Mindestbestellmenge: 6
1N4448HWT-7 1N4448HWT-7 Diodes Incorporated 1N4448HWT.pdf Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 4822601 Stücke:
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38+0.48 EUR
54+ 0.33 EUR
109+ 0.16 EUR
500+ 0.13 EUR
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1N4448HWT-7 1N4448HWT-7 Diodes Inc ds30395.pdf Rectifier Diode Small Signal Switching 80V 0.25A 4ns 2-Pin SOD-523 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
1N4448TAP 1N4448TAP VISHAY 1n4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
auf Bestellung 1761 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
577+ 0.12 EUR
736+ 0.097 EUR
993+ 0.072 EUR
1382+ 0.052 EUR
1761+ 0.04 EUR
Mindestbestellmenge: 455
1N4448TAP 1N4448TAP VISHAY 1n4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1761 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
577+ 0.12 EUR
736+ 0.097 EUR
993+ 0.072 EUR
1382+ 0.052 EUR
1761+ 0.04 EUR
Mindestbestellmenge: 455
1N4448TAP 1N4448TAP Vishay General Semiconductor - Diodes Division 1n4448.pdf Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 19914 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
110+ 0.16 EUR
227+ 0.078 EUR
500+ 0.065 EUR
1000+ 0.045 EUR
2000+ 0.039 EUR
5000+ 0.036 EUR
Mindestbestellmenge: 77
1N4448TAP 1N4448TAP Vishay Semiconductors 1n4448.pdf Diodes - General Purpose, Power, Switching Vr/75V Io/150mA
auf Bestellung 70707 Stücke:
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11+0.26 EUR
16+ 0.18 EUR
100+ 0.088 EUR
1000+ 0.049 EUR
2500+ 0.046 EUR
10000+ 0.032 EUR
25000+ 0.03 EUR
Mindestbestellmenge: 11
1N4448TAP 1N4448TAP Vishay General Semiconductor - Diodes Division 1n4448.pdf Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.031 EUR
Mindestbestellmenge: 10000
1N4448TR 1N4448TR ONSEMI 1N91x_1N4x48.PDF Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
auf Bestellung 9990 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
3497+ 0.02 EUR
4386+ 0.016 EUR
Mindestbestellmenge: 556
1N4448TR 1N4448TR VISHAY 1n4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
385+ 0.19 EUR
658+ 0.11 EUR
923+ 0.078 EUR
1099+ 0.065 EUR
3206+ 0.022 EUR
3379+ 0.021 EUR
Mindestbestellmenge: 228
1N4448TR 1N4448TR VISHAY 1n4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30000 Stücke:
Lieferzeit 7-14 Tag (e)
228+0.31 EUR
385+ 0.19 EUR
658+ 0.11 EUR
923+ 0.078 EUR
1099+ 0.065 EUR
3206+ 0.022 EUR
3379+ 0.021 EUR
Mindestbestellmenge: 228
1N4448TR 1N4448TR ONSEMI 1N91x_1N4x48.PDF Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9990 Stücke:
Lieferzeit 7-14 Tag (e)
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
Mindestbestellmenge: 556
1N4448TR 1N4448TR onsemi 1n914-d.pdf Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 356084 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
162+ 0.11 EUR
301+ 0.059 EUR
500+ 0.046 EUR
1000+ 0.032 EUR
2000+ 0.026 EUR
5000+ 0.025 EUR
Mindestbestellmenge: 112
1N4448TR 1N4448TR Vishay Semiconductors 1n914-d.pdf 1n4448.pdf Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R
auf Bestellung 370037 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.33 EUR
13+ 0.23 EUR
100+ 0.095 EUR
1000+ 0.058 EUR
2500+ 0.053 EUR
10000+ 0.033 EUR
50000+ 0.028 EUR
Mindestbestellmenge: 9
1N4448TR 1N4448TR Vishay General Semiconductor - Diodes Division 1n4448.pdf Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.032 EUR
Mindestbestellmenge: 10000
1N4448TR 1N4448TR onsemi / Fairchild 1N914_D-2309448.pdf Diodes - General Purpose, Power, Switching Hi Conductance Fast
auf Bestellung 1373183 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.16 EUR
27+ 0.11 EUR
100+ 0.046 EUR
1000+ 0.028 EUR
2500+ 0.025 EUR
10000+ 0.019 EUR
20000+ 0.018 EUR
Mindestbestellmenge: 18
1N4448TR 1N4448TR onsemi 1n914-d.pdf Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 340000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.021 EUR
30000+ 0.02 EUR
50000+ 0.017 EUR
100000+ 0.016 EUR
250000+ 0.014 EUR
Mindestbestellmenge: 10000
1N4448
Produktcode: 20338		 1n4448-datasheet.pdf
1N4448
Hersteller: YJ/Philips
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-35 (DO-204AH, SOD27)
Urev.,V: 100
Iausricht.,А: 01.02.2000
Beschreibung: Schneller
Austauschbar: 1N4148
Монтаж: THT
Падіння напруги Vf: 1 V
verfügbar: 9554 Stück
Anzahl Preis ohne MwSt
1+0.02 EUR
10+ 0.016 EUR
100+ 0.0099 EUR
1000+ 0.0078 EUR
1N4448W
Produktcode: 160505		 1n4448w-sod123-datasheet.pdf
1N4448W
Hersteller: Yangjie
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: SOD-123
Urev.,V: 100 V
Iausricht.,А: 0,25 A
Монтаж: SMD
Падіння напруги Vf: 1 V
auf Bestellung 2760 Stück:
Lieferzeit 21-28 Tag (e)
1N4448WS
Produktcode: 160506		 1n4448ws-sod323.pdf
1N4448WS
Hersteller: Yangjie
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: SOD-323
Urev.,V: 75 V
Iausricht.,А: 0,25 A
Beschreibung: Комутуючий діод швидкий TRR: 4 ns
Монтаж: SMD
Падіння напруги Vf: 1 V
erwartet: 600 Stück
1N4448 1n4148.pdf
1N4448
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 15108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
625+0.11 EUR
1725+ 0.041 EUR
1985+ 0.036 EUR
2393+ 0.03 EUR
2841+ 0.025 EUR
3425+ 0.021 EUR
4274+ 0.017 EUR
7937+ 0.009 EUR
8475+ 0.0084 EUR
Mindestbestellmenge: 625
1N4448 1N4148_1n4448.pdf
1N4448
Hersteller: CDIL
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 7867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
604+0.12 EUR
1064+ 0.067 EUR
1812+ 0.039 EUR
2526+ 0.028 EUR
3013+ 0.024 EUR
3624+ 0.02 EUR
7867+ 0.0092 EUR
Mindestbestellmenge: 604
1N4448 1n4448-f.pdf
1N4448
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 5602 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
3497+ 0.02 EUR
4546+ 0.016 EUR
Mindestbestellmenge: 556
1N4448 1N41xx_1N4448.pdf
1N4448
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
475+0.16 EUR
Mindestbestellmenge: 475
1N4448 1N4148_1n4448.pdf
1N4448
Hersteller: CDIL
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7867 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
604+0.12 EUR
1064+ 0.067 EUR
1812+ 0.039 EUR
2526+ 0.028 EUR
3013+ 0.024 EUR
3624+ 0.02 EUR
7867+ 0.0092 EUR
Mindestbestellmenge: 604
1N4448 1N41xx_1N4448.pdf
1N4448
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 0.5A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
475+0.16 EUR
1000+ 0.072 EUR
1553+ 0.046 EUR
Mindestbestellmenge: 475
1N4448 1n4148.pdf
1N4448
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ammo Pack; Ifsm: 4A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15108 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
625+0.11 EUR
1725+ 0.041 EUR
1985+ 0.036 EUR
2393+ 0.03 EUR
2841+ 0.025 EUR
3425+ 0.021 EUR
4274+ 0.017 EUR
Mindestbestellmenge: 625
1N4448 1n4448-f.pdf
1N4448
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Max. load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5602 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
Mindestbestellmenge: 556
1N4448 1n4148.pdf
Hersteller: Diotec Semiconductor
Description: DIODE GEN PURP 75V 0.2A DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -50°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.018 EUR
10000+ 0.015 EUR
Mindestbestellmenge: 5000
1N4448 1n914-d.pdf ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw 1n4148.pdf
1N4448
Hersteller: Diotec Semiconductor
Diodes - General Purpose, Power, Switching Small Signal Diode, DO-35, 100V, 0.2A, 175C
auf Bestellung 23141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.16 EUR
44+ 0.065 EUR
100+ 0.055 EUR
500+ 0.042 EUR
1000+ 0.037 EUR
5000+ 0.028 EUR
10000+ 0.018 EUR
Mindestbestellmenge: 18
1N4448 ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw
1N4448
Hersteller: Fairchild Semiconductor
Description: HIGH CONDUCTANCE FAST DIODE
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 115764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11539+0.049 EUR
Mindestbestellmenge: 11539
1N4448 1n914-d.pdf
1N4448
Hersteller: onsemi
Description: SMALL SGNL DIODE DO35 100V 175C
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 95242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.16 EUR
162+ 0.11 EUR
301+ 0.059 EUR
500+ 0.046 EUR
1000+ 0.032 EUR
2000+ 0.026 EUR
5000+ 0.025 EUR
10000+ 0.021 EUR
50000+ 0.017 EUR
Mindestbestellmenge: 112
1N4448 1N914_D-2309448.pdf
1N4448
Hersteller: onsemi / Fairchild
Diodes - General Purpose, Power, Switching Hi Conductance Fast
auf Bestellung 54947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.16 EUR
27+ 0.11 EUR
100+ 0.046 EUR
1000+ 0.028 EUR
5000+ 0.023 EUR
10000+ 0.019 EUR
25000+ 0.018 EUR
Mindestbestellmenge: 18
1N4448 1n914-d.pdf ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw 1n4148.pdf
Hersteller: LGE
Імпульсний діод вивідний; Ur, В = 100; Iо, A = 0,15; If, A = 0,15; Uf, В = 1; Тексп, °С = -65...+175; DO-35
auf Bestellung 2384 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
134+0.05 EUR
148+ 0.041 EUR
167+ 0.035 EUR
Mindestbestellmenge: 134
1N4448 1n914-d.pdf ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw 1n4148.pdf
Hersteller: Philips
Диод ММ DO35 U=75V I=0,2A
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+0.033 EUR
10+ 0.029 EUR
Mindestbestellmenge: 2
1N4448 A0 1N4448.pdf
1N4448 A0
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
417+0.17 EUR
469+ 0.15 EUR
521+ 0.14 EUR
782+ 0.092 EUR
800+ 0.089 EUR
Mindestbestellmenge: 417
1N4448 A0 1N4448.pdf
1N4448 A0
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.45A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 800 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
417+0.17 EUR
469+ 0.15 EUR
521+ 0.14 EUR
782+ 0.092 EUR
800+ 0.089 EUR
Mindestbestellmenge: 417
1N4448 A0G 1N4148%20SERIES_J1804.pdf
1N4448 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
60+1.19 EUR
Mindestbestellmenge: 60
1N4448 A0G 1N4148%20SERIES_J1804.pdf
1N4448 A0G
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.5W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
60+1.19 EUR
100+ 0.72 EUR
250+ 0.29 EUR
500+ 0.14 EUR
Mindestbestellmenge: 60
1N4448 A0G 1n414820series_j1804.pdf
1N4448 A0G
Hersteller: Taiwan Semiconductor
Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
1N4448HLP-7 ds30590.pdf
1N4448HLP-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
auf Bestellung 4180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
755+ 0.095 EUR
855+ 0.084 EUR
990+ 0.073 EUR
1045+ 0.069 EUR
Mindestbestellmenge: 325
1N4448HLP-7 ds30590.pdf
1N4448HLP-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 300mA; 4ns; DFN2; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DFN2
Max. forward voltage: 1V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4180 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
325+0.22 EUR
755+ 0.095 EUR
855+ 0.084 EUR
990+ 0.073 EUR
1045+ 0.069 EUR
Mindestbestellmenge: 325
1N4448HLP-7 ds30590.pdf
1N4448HLP-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 8886000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
9000+ 0.15 EUR
30000+ 0.14 EUR
75000+ 0.12 EUR
Mindestbestellmenge: 3000
1N4448HLP-7 ds30590.pdf
1N4448HLP-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA 2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 8890955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
38+ 0.47 EUR
100+ 0.28 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 29
1N4448HLP-7 ds30590.pdf
1N4448HLP-7
Hersteller: Diodes Incorporated
Diodes - General Purpose, Power, Switching 80V 125mA
auf Bestellung 10080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.61 EUR
10+ 0.46 EUR
100+ 0.24 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
3000+ 0.16 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 5
1N4448HLP-7 ds30590.pdf
1N4448HLP-7
Hersteller: Diodes Inc
Rectifier Diode Small Signal Switching 80V 0.3A 4ns 2-Pin X1-DFN T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
1N4448HWS-13-F ds30196.pdf
1N4448HWS-13-F
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 750000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.084 EUR
30000+ 0.082 EUR
50000+ 0.068 EUR
Mindestbestellmenge: 10000
1N4448HWS-13-F ds30196.pdf
1N4448HWS-13-F
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 756965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
45+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
5000+ 0.097 EUR
Mindestbestellmenge: 32
1N4448HWS-13-F DIODS20367_1-2541790.pdf
Hersteller: Diodes Incorporated
Diodes - General Purpose, Power, Switching 80 Vrrm 57Vr 250 mA FAST SWITCH DIODE
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.56 EUR
10+ 0.39 EUR
100+ 0.16 EUR
1000+ 0.1 EUR
2500+ 0.099 EUR
Mindestbestellmenge: 6
1N4448HWS-7-F 1N4448HWS.pdf
1N4448HWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2175+0.033 EUR
2450+ 0.029 EUR
2750+ 0.026 EUR
2850+ 0.025 EUR
3000+ 0.024 EUR
Mindestbestellmenge: 2175
1N4448HWS-7-F 1N4448HWS.pdf
1N4448HWS-7-F
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 250mA; 4ns; SOD323; Ufmax: 0.72V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.25A
Max. load current: 0.5A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3.5pF
Case: SOD323
Max. forward voltage: 0.72V
Max. forward impulse current: 1A
Power dissipation: 0.2W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 3500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2175+0.033 EUR
2450+ 0.029 EUR
2750+ 0.026 EUR
2850+ 0.025 EUR
3000+ 0.024 EUR
12000+ 0.023 EUR
Mindestbestellmenge: 2175
1N4448HWS-7-F DIODS20367_1-2541790.pdf
1N4448HWS-7-F
Hersteller: Diodes Incorporated
Diodes - General Purpose, Power, Switching Vr/90V Io/250mA T/R
auf Bestellung 3584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.36 EUR
12+ 0.24 EUR
100+ 0.1 EUR
1000+ 0.074 EUR
3000+ 0.058 EUR
9000+ 0.048 EUR
24000+ 0.046 EUR
Mindestbestellmenge: 8
1N4448HWS-7-F ds30196.pdf
1N4448HWS-7-F
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 375000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.064 EUR
6000+ 0.059 EUR
9000+ 0.049 EUR
30000+ 0.048 EUR
75000+ 0.043 EUR
150000+ 0.038 EUR
Mindestbestellmenge: 3000
1N4448HWS-7-F ds30196.pdf
1N4448HWS-7-F
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 376614 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
68+ 0.26 EUR
139+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
Mindestbestellmenge: 46
1N4448HWSQ-7-F DIODS20367_1-2541790.pdf
Hersteller: Diodes Incorporated
Diodes - General Purpose, Power, Switching Fast Switching Diode SOD323 T&R 3K
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.41 EUR
10+ 0.29 EUR
100+ 0.14 EUR
1000+ 0.083 EUR
3000+ 0.06 EUR
9000+ 0.053 EUR
24000+ 0.048 EUR
Mindestbestellmenge: 7
1N4448HWSQ-7-F ds30196.pdf
1N4448HWSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Qualification: AEC-Q101
auf Bestellung 1266000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.07 EUR
6000+ 0.065 EUR
9000+ 0.054 EUR
30000+ 0.053 EUR
75000+ 0.048 EUR
150000+ 0.041 EUR
Mindestbestellmenge: 3000
1N4448HWSQ-7-F ds30196.pdf
1N4448HWSQ-7-F
Hersteller: Diodes Incorporated
Description: DIODE GP 80V 250MA SOD323 3K
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 150
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Reverse Recovery Time (trr): 4 ns
Voltage - DC Reverse (Vr) (Max): 80 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1266000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
62+ 0.29 EUR
126+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.081 EUR
Mindestbestellmenge: 44
1N4448HWT-7 1N4448HWT.pdf
1N4448HWT-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
auf Bestellung 2650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1475+0.049 EUR
1925+ 0.037 EUR
2175+ 0.033 EUR
2525+ 0.028 EUR
2650+ 0.027 EUR
Mindestbestellmenge: 1475
1N4448HWT-7 1N4448HWT.pdf
1N4448HWT-7
Hersteller: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 125mA; 4ns; SOD523; Ufmax: 0.62V; 150mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.125A
Max. load current: 0.25A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 3pF
Case: SOD523
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Power dissipation: 0.15W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2650 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1475+0.049 EUR
1925+ 0.037 EUR
2175+ 0.033 EUR
2525+ 0.028 EUR
2650+ 0.027 EUR
Mindestbestellmenge: 1475
1N4448HWT-7 1N4448HWT.pdf
1N4448HWT-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 4821000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.081 EUR
6000+ 0.075 EUR
9000+ 0.063 EUR
30000+ 0.061 EUR
75000+ 0.055 EUR
150000+ 0.048 EUR
Mindestbestellmenge: 3000
1N4448HWT-7 1N4448HWT.pdf
1N4448HWT-7
Hersteller: Diodes Incorporated
Diodes - General Purpose, Power, Switching 100 Vrm 80 Vrrm 57v Rms 250mA IFM
auf Bestellung 202489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.56 EUR
10+ 0.39 EUR
100+ 0.19 EUR
1000+ 0.11 EUR
3000+ 0.097 EUR
9000+ 0.074 EUR
24000+ 0.072 EUR
Mindestbestellmenge: 6
1N4448HWT-7 1N4448HWT.pdf
1N4448HWT-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 80V 125MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 125mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
auf Bestellung 4822601 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
54+ 0.33 EUR
109+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.094 EUR
Mindestbestellmenge: 38
1N4448HWT-7 ds30395.pdf
1N4448HWT-7
Hersteller: Diodes Inc
Rectifier Diode Small Signal Switching 80V 0.25A 4ns 2-Pin SOD-523 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
1N4448TAP 1n4448.pdf
1N4448TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
auf Bestellung 1761 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
455+0.16 EUR
577+ 0.12 EUR
736+ 0.097 EUR
993+ 0.072 EUR
1382+ 0.052 EUR
1761+ 0.04 EUR
Mindestbestellmenge: 455
1N4448TAP 1n4448.pdf
1N4448TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1761 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
455+0.16 EUR
577+ 0.12 EUR
736+ 0.097 EUR
993+ 0.072 EUR
1382+ 0.052 EUR
1761+ 0.04 EUR
Mindestbestellmenge: 455
1N4448TAP 1n4448.pdf
1N4448TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 19914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
77+0.23 EUR
110+ 0.16 EUR
227+ 0.078 EUR
500+ 0.065 EUR
1000+ 0.045 EUR
2000+ 0.039 EUR
5000+ 0.036 EUR
Mindestbestellmenge: 77
1N4448TAP 1n4448.pdf
1N4448TAP
Hersteller: Vishay Semiconductors
Diodes - General Purpose, Power, Switching Vr/75V Io/150mA
auf Bestellung 70707 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+0.26 EUR
16+ 0.18 EUR
100+ 0.088 EUR
1000+ 0.049 EUR
2500+ 0.046 EUR
10000+ 0.032 EUR
25000+ 0.03 EUR
Mindestbestellmenge: 11
1N4448TAP 1n4448.pdf
1N4448TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 150MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.031 EUR
Mindestbestellmenge: 10000
1N4448TR 1N91x_1N4x48.PDF
1N4448TR
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
auf Bestellung 9990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
3497+ 0.02 EUR
4386+ 0.016 EUR
Mindestbestellmenge: 556
1N4448TR 1n4448.pdf
1N4448TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
228+0.31 EUR
385+ 0.19 EUR
658+ 0.11 EUR
923+ 0.078 EUR
1099+ 0.065 EUR
3206+ 0.022 EUR
3379+ 0.021 EUR
Mindestbestellmenge: 228
1N4448TR 1n4448.pdf
1N4448TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 440mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Max. load current: 0.5A
Reverse recovery time: 8ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.44W
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
228+0.31 EUR
385+ 0.19 EUR
658+ 0.11 EUR
923+ 0.078 EUR
1099+ 0.065 EUR
3206+ 0.022 EUR
3379+ 0.021 EUR
Mindestbestellmenge: 228
1N4448TR 1N91x_1N4x48.PDF
1N4448TR
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 300mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.5W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9990 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
556+0.13 EUR
715+ 0.1 EUR
878+ 0.082 EUR
1316+ 0.054 EUR
2110+ 0.034 EUR
2632+ 0.027 EUR
3125+ 0.023 EUR
Mindestbestellmenge: 556
1N4448TR 1n914-d.pdf
1N4448TR
Hersteller: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 356084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
112+0.16 EUR
162+ 0.11 EUR
301+ 0.059 EUR
500+ 0.046 EUR
1000+ 0.032 EUR
2000+ 0.026 EUR
5000+ 0.025 EUR
Mindestbestellmenge: 112
1N4448TR 1n914-d.pdf 1n4448.pdf
1N4448TR
Hersteller: Vishay Semiconductors
Diodes - General Purpose, Power, Switching Vr/75V Io/150mA T/R
auf Bestellung 370037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+0.33 EUR
13+ 0.23 EUR
100+ 0.095 EUR
1000+ 0.058 EUR
2500+ 0.053 EUR
10000+ 0.033 EUR
50000+ 0.028 EUR
Mindestbestellmenge: 9
1N4448TR 1n4448.pdf
1N4448TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.032 EUR
Mindestbestellmenge: 10000
1N4448TR 1N914_D-2309448.pdf
1N4448TR
Hersteller: onsemi / Fairchild
Diodes - General Purpose, Power, Switching Hi Conductance Fast
auf Bestellung 1373183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+0.16 EUR
27+ 0.11 EUR
100+ 0.046 EUR
1000+ 0.028 EUR
2500+ 0.025 EUR
10000+ 0.019 EUR
20000+ 0.018 EUR
Mindestbestellmenge: 18
1N4448TR 1n914-d.pdf
1N4448TR
Hersteller: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 340000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.021 EUR
30000+ 0.02 EUR
50000+ 0.017 EUR
100000+ 0.016 EUR
250000+ 0.014 EUR
Mindestbestellmenge: 10000
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