Suchergebnisse für "stp15" : 118
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Preis |
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STP150NF55 Produktcode: 112613
zu Favoriten hinzufügen
Lieblingsprodukt
|
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
Im Einkaufswagen Stück im Wert von UAH | |
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STP15810 Produktcode: 167973
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
Im Einkaufswagen Stück im Wert von UAH | ||
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STP15N05L Produktcode: 109117
zu Favoriten hinzufügen
Lieblingsprodukt
|
ST |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
Im Einkaufswagen Stück im Wert von UAH | |
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STP15N95K5 Produktcode: 130839
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
Im Einkaufswagen Stück im Wert von UAH | ||
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STP15NM60ND Produktcode: 174006
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
Im Einkaufswagen Stück im Wert von UAH | ||
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STP-15 | Banner Engineering Corporation |
Description: STP-15 TEST PIECE 60MM Packaging: Box Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP-15 | Banner Engineering |
Safety Light Curtains STP-15 TEST PIECE 60 mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP150N10F7 | STMicroelectronics |
Trans MOSFET N-CH 110V 110A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP150N10F7AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 127nC Pulsed drain current: 440A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP150N10F7AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 127nC Pulsed drain current: 440A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP150N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP150NF04 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Pulsed drain current: 320A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP150NF04 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Pulsed drain current: 320A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP150NF04 | STMicroelectronics |
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP150NF55 | STMicroelectronics |
Description: MOSFET N-CH 55V 120A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15152254 | STATICTEC |
Category: ESD Bags and Foils Description: Protection bag; ESD; L: 254mm; W: 152mm; Thk: 76um; 100pcs; <100GΩ Version: ESD Material: metallized film bag Kind of protective bag: metallised; shielding Width: 152mm Length: 254mm Closing system: self-seal Thickness: 76µm Type of antistatic accessories: protection bag Surface resistance: <100GΩ Quantity in set/package: 100pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15152254 | STATICTEC |
Category: ESD Bags and Foils Description: Protection bag; ESD; L: 254mm; W: 152mm; Thk: 76um; 100pcs; <100GΩ Version: ESD Material: metallized film bag Kind of protective bag: metallised; shielding Width: 152mm Length: 254mm Closing system: self-seal Thickness: 76µm Type of antistatic accessories: protection bag Surface resistance: <100GΩ Quantity in set/package: 100pcs. Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15203254 | STATICTEC |
Category: ESD Bags and Foils Description: Protection bag; ESD; L: 254mm; W: 203mm; Thk: 76um; 100pcs; <100GΩ Version: ESD Material: metallized film bag Kind of protective bag: metallised; shielding Width: 203mm Length: 254mm Closing system: self-seal Thickness: 76µm Type of antistatic accessories: protection bag Surface resistance: <100GΩ Quantity in set/package: 100pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15203254 | STATICTEC |
Category: ESD Bags and Foils Description: Protection bag; ESD; L: 254mm; W: 203mm; Thk: 76um; 100pcs; <100GΩ Version: ESD Material: metallized film bag Kind of protective bag: metallised; shielding Width: 203mm Length: 254mm Closing system: self-seal Thickness: 76µm Type of antistatic accessories: protection bag Surface resistance: <100GΩ Quantity in set/package: 100pcs. Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15254305 | STATICTEC |
Category: ESD Bags and Foils Description: Protection bag; ESD; L: 305mm; W: 254mm; Thk: 76um; 100pcs; <100GΩ Version: ESD Material: metallized film bag Kind of protective bag: metallised; shielding Width: 254mm Length: 305mm Closing system: self-seal Thickness: 76µm Type of antistatic accessories: protection bag Surface resistance: <100GΩ Quantity in set/package: 100pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP15810 | STMicroelectronics | MOSFETs TO 220 AB NON ISOL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP15N60M2-EP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 378mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 17nC Pulsed drain current: 44A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP15N60M2-EP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 378mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 17nC Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP15N60M2-EP | STMicroelectronics |
Description: MOSFET N-CH 600V 11A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15N60M2-EP | STMicroelectronics |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP15N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 44A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP15N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.34Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP15N65M5 | STMicroelectronics |
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Pulsed drain current: 56A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP15N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 375mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Pulsed drain current: 56A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP15N80K5 | STMicroelectronics |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP15N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 48A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| STP15N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 48A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STP15N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15N95K5 | STMicroelectronics |
Trans MOSFET N-CH 950V 12A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15NK50Z | STMicroelectronics |
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15NK50ZFP | STMicroelectronics |
 Description: MOSFET N-CH 500V 14A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 14A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 14A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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STP15NM65N | STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STB15810 | STMicroelectronics | MOSFETs D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP150NF55 Produktcode: 112613
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15810 Produktcode: 167973
zu Favoriten hinzufügen
Lieblingsprodukt
|
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15N05L Produktcode: 109117
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Lieblingsprodukt
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15N95K5 Produktcode: 130839
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Lieblingsprodukt
|
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15NM60ND Produktcode: 174006
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Lieblingsprodukt
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Produkt ist nicht verfügbar
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| STP-15 |
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Hersteller: Banner Engineering Corporation
Description: STP-15 TEST PIECE 60MM
Packaging: Box
Part Status: Active
Description: STP-15 TEST PIECE 60MM
Packaging: Box
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP-15 |
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Hersteller: Banner Engineering
Safety Light Curtains STP-15 TEST PIECE 60 mm
Safety Light Curtains STP-15 TEST PIECE 60 mm
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Im Einkaufswagen
Stück im Wert von UAH
| STP150N10F7 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 110V 110A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 110V 110A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| STP150N10F7AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 127nC
Pulsed drain current: 440A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 127nC
Pulsed drain current: 440A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP150N10F7AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 127nC
Pulsed drain current: 440A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 127nC
Pulsed drain current: 440A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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| STP150N3LLH6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
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| STP150NF04 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 320A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 320A
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| STP150NF04 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 320A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 320A
Anzahl je Verpackung: 1 Stücke
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| STP150NF04 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
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| STP150NF55 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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| STP15152254 |
Hersteller: STATICTEC
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 152mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 152mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 152mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 152mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
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| STP15152254 |
Hersteller: STATICTEC
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 152mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 152mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Anzahl je Verpackung: 1 Stücke
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 152mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 152mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Anzahl je Verpackung: 1 Stücke
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| STP15203254 |
Hersteller: STATICTEC
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 203mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 203mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 203mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 203mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
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Stück im Wert von UAH
| STP15203254 |
Hersteller: STATICTEC
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 203mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 203mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Anzahl je Verpackung: 1 Stücke
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 254mm; W: 203mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 203mm
Length: 254mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STP15254305 |
Hersteller: STATICTEC
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 305mm; W: 254mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 254mm
Length: 305mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
Category: ESD Bags and Foils
Description: Protection bag; ESD; L: 305mm; W: 254mm; Thk: 76um; 100pcs; <100GΩ
Version: ESD
Material: metallized film bag
Kind of protective bag: metallised; shielding
Width: 254mm
Length: 305mm
Closing system: self-seal
Thickness: 76µm
Type of antistatic accessories: protection bag
Surface resistance: <100GΩ
Quantity in set/package: 100pcs.
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| STP15810 |
Hersteller: STMicroelectronics
MOSFETs TO 220 AB NON ISOL
MOSFETs TO 220 AB NON ISOL
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| STP15N60M2-EP |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 378mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 378mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 44A
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| STP15N60M2-EP |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 378mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 7A; Idm: 44A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 378mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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| STP15N60M2-EP |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 378mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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| STP15N60M2-EP |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube
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| STP15N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 44A
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| STP15N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.34Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 44A
Anzahl je Verpackung: 1 Stücke
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| STP15N65M5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220AB Tube
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| STP15N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS
MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS
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| STP15N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
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| STP15N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; Idm: 56A
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 375mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 56A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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| STP15N80K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220AB Tube
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| STP15N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 48A
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| STP15N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 48A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 48A
Anzahl je Verpackung: 1 Stücke
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| STP15N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 950V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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Stück im Wert von UAH
| STP15N95K5 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 950V 12A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 950V 12A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STP15NK50Z |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| STP15NK50ZFP | |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15NM60ND |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP15NM65N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STB15810 |
Hersteller: STMicroelectronics
MOSFETs D2PAK
MOSFETs D2PAK
Produkt ist nicht verfügbar
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