Produkte > SMC DIODE SOLUTIONS > Alle Produkte des Herstellers SMC DIODE SOLUTIONS (9724) > Seite 154 nach 163
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P4SMF36A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...36.8V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Kind of package: reel Leakage current: 1µA Manufacturer series: P4SMF |
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S3M0016120B | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 75A Pulsed drain current: 250A Power dissipation: 576W Case: T2PAK Gate-source voltage: -4...18V On-state resistance: 25mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 287nC Technology: SiC Features of semiconductor devices: Kelvin terminal |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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S2M0160120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 40A Power dissipation: 121W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 26.5nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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S2M0160120J | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 11A Pulsed drain current: 40A Power dissipation: 122W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 26.5nC Technology: SiC Features of semiconductor devices: Kelvin terminal |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRD360TR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape Semiconductor structure: common anode; single diode Max. off-state voltage: 60V Load current: 3A Case: DPAK Max. forward voltage: 0.7V Capacitance: 300pF Max. forward impulse current: 75A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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15SQ060TR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15A; R6; Ufmax: 680mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A Semiconductor structure: single diode Case: R6 Max. forward voltage: 0.68V Max. forward impulse current: 0.3kA Leakage current: 0.5mA Kind of package: reel; tape |
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SMBJ28CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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SMCJ30CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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MBR3060CT | SMC DIODE SOLUTIONS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.77V Max. forward impulse current: 200A Kind of package: tube Capacitance: 700pF Leakage current: 5mA |
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MBR3060CT-1 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO262; Ufmax: 770mV; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO262 Max. forward voltage: 0.77V Max. forward impulse current: 200A Leakage current: 5mA Capacitance: 700pF Kind of package: tube |
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MBR3060CTP | SMC DIODE SOLUTIONS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.77V Max. forward impulse current: 200A Kind of package: tube Capacitance: 700pF Leakage current: 1mA |
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MBR3060WT | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 30A; TO247AD; Ufmax: 770mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 30A Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.77V Max. forward impulse current: 200A Kind of package: tube Capacitance: 700pF Leakage current: 5mA |
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SMBJ75CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 5A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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MBR230LSTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 25A Kind of package: reel; tape Leakage current: 1mA Capacitance: 0.1nF |
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MBR230HWTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape Leakage current: 1mA Capacitance: 200pF |
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S2M0160120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 40A Power dissipation: 130W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26.5nC Technology: SiC Features of semiconductor devices: Kelvin terminal |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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S3M0016120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 732W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 25mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 287nC Technology: SiC Features of semiconductor devices: Kelvin terminal |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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S3M0025120K | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W Mounting: THT Technology: SiC Case: TO247-4 Kind of package: tube Polarisation: unipolar Type of transistor: N-MOSFET Gate-source voltage: -4...18V Gate charge: 175nC On-state resistance: 36mΩ Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Drain current: 54A Pulsed drain current: 200A Power dissipation: 517W Drain-source voltage: 1.2kV |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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S2M0120120J | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 66A Power dissipation: 153W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 29.6nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU2010TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 320A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 20A Max. forward impulse current: 0.32kA Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V |
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ST5150 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 5A; TO220AC; Ufmax: 750mV Kind of package: tube Semiconductor structure: single diode Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward voltage: 0.75V Load current: 5A Max. forward impulse current: 120A Max. off-state voltage: 150V |
auf Bestellung 568 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1080CT | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AB; Ufmax: 850mV Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Type of diode: Schottky rectifying Capacitance: 300pF Leakage current: 1mA Max. forward voltage: 0.85V Load current: 10A Max. forward impulse current: 120A Max. off-state voltage: 80V |
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GBU804GTB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5231BTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode; 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 5µA |
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MBR260HWTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SOD123; SMD; 60V; 2A; reel,tape Capacitance: 0.1nF Max. off-state voltage: 60V Max. forward voltage: 0.66V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 30A Leakage current: 1mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOD123 |
auf Bestellung 11485 Stücke: Lieferzeit 14-21 Tag (e) |
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10TQ035 | SMC DIODE SOLUTIONS |
![]() ![]() Description: Diode: Schottky rectifying; THT; 35V; 10A; TO220AB; Ufmax: 700mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 35V Load current: 10A Semiconductor structure: single diode Kind of package: tube Leakage current: 2mA Max. forward voltage: 0.7V Capacitance: 900pF Max. forward impulse current: 330A |
auf Bestellung 871 Stücke: Lieferzeit 14-21 Tag (e) |
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10TQ035STR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 35V; 10A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 35V Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape Leakage current: 2mA Max. forward voltage: 0.7V Capacitance: 900pF Max. forward impulse current: 330A |
auf Bestellung 792 Stücke: Lieferzeit 14-21 Tag (e) |
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ER3GTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.25V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.25V Leakage current: 5µA Kind of package: reel; tape |
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1.5KE24CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 22.8÷25.2V; 45.8A; bidirectional; DO201AD; 1.5kW; reel Type of diode: TVS Max. off-state voltage: 20.5V Breakdown voltage: 22.8...25.2V Max. forward impulse current: 45.8A Semiconductor structure: bidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Kind of package: reel Manufacturer series: 1.5KE |
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SMCJ40CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.3A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 23.3A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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MBR30150CT | SMC DIODE SOLUTIONS |
![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 1V; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 1V Max. forward impulse current: 200A Kind of package: tube Capacitance: 760pF Leakage current: 1mA |
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MBR30120CT | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220AB; Ufmax: 900mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 120V Load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Max. forward impulse current: 200A Kind of package: tube Capacitance: 400pF Leakage current: 1mA |
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MBR30150CTL | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 900mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.9V Max. forward impulse current: 408A Kind of package: tube Capacitance: 340pF Leakage current: 1mA |
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MBR30150WT | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 30A; TO247AD; Ufmax: 1V; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 1V Max. forward impulse current: 408A Leakage current: 0.1mA Capacitance: 400pF Kind of package: tube |
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SMBJ48CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.8A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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SMBJ51ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 7.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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SMBJ51CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 56.7...62.7V Max. forward impulse current: 7.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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TPK15KP30A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 15kW; 33.3÷36.8V; 309A; unidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 309A Semiconductor structure: unidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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GBJ15005TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 15A; Ifsm: 200A Case: GBJ Type of bridge rectifier: single-phase Electrical mounting: THT Max. forward voltage: 1.1V Load current: 15A Max. forward impulse current: 200A Max. off-state voltage: 50V Kind of package: tube Leads: flat pin Version: flat |
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GBJ1502TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 200A Max. forward impulse current: 200A Kind of package: tube Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Case: GBJ Leads: flat pin Max. off-state voltage: 200V Max. forward voltage: 1.1V Load current: 15A |
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GBJ1508TB | SMC DIODE SOLUTIONS |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 15A Max. forward impulse current: 200A Electrical mounting: THT Version: flat Max. forward voltage: 1.1V Leads: flat pin Case: GBJ Kind of package: tube |
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P4SMF26A | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel Manufacturer series: P4SMF |
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5.0SMCJ26ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 119A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: 5.0SMCJ |
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SMBJ160ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 178÷197V; 2.3A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 160V Breakdown voltage: 178...197V Max. forward impulse current: 2.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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SMBJ160CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 178÷197V; 2.3A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 160V Breakdown voltage: 178...197V Max. forward impulse current: 2.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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MBR760 | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 750mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 7.5A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube Leakage current: 0.5mA |
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SMBJ13ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 28A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 28A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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S2M0025120K | SMC DIODE SOLUTIONS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 130nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 250A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 39A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 517W Polarisation: unipolar Kind of package: tube |
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ST30150C | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 790mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.79V Max. forward impulse current: 200A Kind of package: tube |
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SDURF2030CTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common anode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 20A Leakage current: 30µA Reverse recovery time: 45ns |
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SDURF2030CT | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 20A Leakage current: 30µA Reverse recovery time: 45ns |
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SK220ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMA Capacitance: 170pF Leakage current: 0.5mA Max. forward voltage: 0.9V Load current: 2A Max. forward impulse current: 50A Max. off-state voltage: 200V |
auf Bestellung 12083 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRF1080CTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: Schottky rectifying; THT; 80V; 10A; ITO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A Semiconductor structure: common anode; double Case: ITO220AB Kind of package: tube Leakage current: 1mA Capacitance: 300pF Max. forward voltage: 0.95V Max. forward impulse current: 120A |
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SDURF1030CT | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 10A Leakage current: 30µA Reverse recovery time: 45ns |
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SDURF1030CTR | SMC DIODE SOLUTIONS |
![]() Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common anode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 10A Leakage current: 30µA Reverse recovery time: 45ns |
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1.5KE75ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 71.3÷78.8V; 14.8A; unidirectional; DO201AD; reel Type of diode: TVS Max. off-state voltage: 64.1V Breakdown voltage: 71.3...78.8V Max. forward impulse current: 14.8A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Peak pulse power dissipation: 1.5kW Kind of package: reel Manufacturer series: 1.5KE |
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SMAJ120ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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SMAJ120CATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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SMCJ33ATR | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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TPK15KP15CA | SMC DIODE SOLUTIONS |
![]() Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; bidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 618A Semiconductor structure: bidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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P4SMF36A |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...36.8V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Leakage current: 1µA
Manufacturer series: P4SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...36.8V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Leakage current: 1µA
Manufacturer series: P4SMF
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S3M0016120B |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75A
Pulsed drain current: 250A
Power dissipation: 576W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 75A; Idm: 250A; 576W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 75A
Pulsed drain current: 250A
Power dissipation: 576W
Case: T2PAK
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.33 EUR |
7+ | 11.65 EUR |
10+ | 11.21 EUR |
S2M0160120T |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 121W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 26.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.76 EUR |
36+ | 2.03 EUR |
38+ | 1.93 EUR |
S2M0160120J |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 40A
Power dissipation: 122W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26.5nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 11A
Pulsed drain current: 40A
Power dissipation: 122W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26.5nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.05 EUR |
19+ | 3.9 EUR |
20+ | 3.69 EUR |
MBRD360TR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape
Semiconductor structure: common anode; single diode
Max. off-state voltage: 60V
Load current: 3A
Case: DPAK
Max. forward voltage: 0.7V
Capacitance: 300pF
Max. forward impulse current: 75A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 60V; 3A; reel,tape
Semiconductor structure: common anode; single diode
Max. off-state voltage: 60V
Load current: 3A
Case: DPAK
Max. forward voltage: 0.7V
Capacitance: 300pF
Max. forward impulse current: 75A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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15SQ060TR |
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; R6; Ufmax: 680mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.68V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15A; R6; Ufmax: 680mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.68V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
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SMBJ28CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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SMCJ30CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 31A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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MBR3060CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 700pF
Leakage current: 5mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 700pF
Leakage current: 5mA
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MBR3060CT-1 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO262; Ufmax: 770mV; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO262
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO262; Ufmax: 770mV; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO262
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Leakage current: 5mA
Capacitance: 700pF
Kind of package: tube
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MBR3060CTP |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 700pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO220AB; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 700pF
Leakage current: 1mA
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MBR3060WT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO247AD; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 700pF
Leakage current: 5mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30A; TO247AD; Ufmax: 770mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.77V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 700pF
Leakage current: 5mA
Produkt ist nicht verfügbar
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SMBJ75CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 5A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 5A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
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MBR230LSTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 25A
Kind of package: reel; tape
Leakage current: 1mA
Capacitance: 0.1nF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 25A
Kind of package: reel; tape
Leakage current: 1mA
Capacitance: 0.1nF
Produkt ist nicht verfügbar
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MBR230HWTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Leakage current: 1mA
Capacitance: 200pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Leakage current: 1mA
Capacitance: 200pF
Produkt ist nicht verfügbar
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S2M0160120K |
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 130W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26.5nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 130W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26.5nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.38 EUR |
18+ | 3.98 EUR |
S3M0016120K |
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.67 EUR |
6+ | 12.27 EUR |
7+ | 11.6 EUR |
S3M0025120K |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Gate charge: 175nC
On-state resistance: 36mΩ
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 517W
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate-source voltage: -4...18V
Gate charge: 175nC
On-state resistance: 36mΩ
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 517W
Drain-source voltage: 1.2kV
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
S2M0120120J |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 153W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 153W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 153W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.58 EUR |
18+ | 4.02 EUR |
19+ | 3.8 EUR |
GBU2010TB |
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Hersteller: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 20A
Max. forward impulse current: 0.32kA
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 320A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 20A
Max. forward impulse current: 0.32kA
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Produkt ist nicht verfügbar
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ST5150 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5A; TO220AC; Ufmax: 750mV
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 0.75V
Load current: 5A
Max. forward impulse current: 120A
Max. off-state voltage: 150V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5A; TO220AC; Ufmax: 750mV
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward voltage: 0.75V
Load current: 5A
Max. forward impulse current: 120A
Max. off-state voltage: 150V
auf Bestellung 568 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
159+ | 0.45 EUR |
212+ | 0.34 EUR |
256+ | 0.28 EUR |
271+ | 0.26 EUR |
MBR1080CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AB; Ufmax: 850mV
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Capacitance: 300pF
Leakage current: 1mA
Max. forward voltage: 0.85V
Load current: 10A
Max. forward impulse current: 120A
Max. off-state voltage: 80V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AB; Ufmax: 850mV
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Type of diode: Schottky rectifying
Capacitance: 300pF
Leakage current: 1mA
Max. forward voltage: 0.85V
Load current: 10A
Max. forward impulse current: 120A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
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GBU804GTB |
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Hersteller: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
MMSZ5231BTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR260HWTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 60V; 2A; reel,tape
Capacitance: 0.1nF
Max. off-state voltage: 60V
Max. forward voltage: 0.66V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 60V; 2A; reel,tape
Capacitance: 0.1nF
Max. off-state voltage: 60V
Max. forward voltage: 0.66V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 1mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD123
auf Bestellung 11485 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
410+ | 0.17 EUR |
610+ | 0.12 EUR |
680+ | 0.11 EUR |
820+ | 0.087 EUR |
880+ | 0.082 EUR |
10TQ035 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10A; TO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 2mA
Max. forward voltage: 0.7V
Capacitance: 900pF
Max. forward impulse current: 330A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 10A; TO220AB; Ufmax: 700mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 35V
Load current: 10A
Semiconductor structure: single diode
Kind of package: tube
Leakage current: 2mA
Max. forward voltage: 0.7V
Capacitance: 900pF
Max. forward impulse current: 330A
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
84+ | 0.86 EUR |
139+ | 0.51 EUR |
155+ | 0.46 EUR |
176+ | 0.41 EUR |
186+ | 0.38 EUR |
250+ | 0.37 EUR |
10TQ035STR |
Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 35V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 2mA
Max. forward voltage: 0.7V
Capacitance: 900pF
Max. forward impulse current: 330A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 35V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Leakage current: 2mA
Max. forward voltage: 0.7V
Capacitance: 900pF
Max. forward impulse current: 330A
auf Bestellung 792 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
129+ | 0.55 EUR |
143+ | 0.5 EUR |
164+ | 0.44 EUR |
174+ | 0.41 EUR |
ER3GTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.25V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 35ns; SMC; Ufmax: 1.25V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.25V
Leakage current: 5µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
1.5KE24CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 45.8A; bidirectional; DO201AD; 1.5kW; reel
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 45.8A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 22.8÷25.2V; 45.8A; bidirectional; DO201AD; 1.5kW; reel
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 22.8...25.2V
Max. forward impulse current: 45.8A
Semiconductor structure: bidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMCJ40CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.3A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 44.4÷49.1V; 23.3A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 23.3A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MBR30150CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 760pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 760pF
Leakage current: 1mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MBR30120CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220AB; Ufmax: 900mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 400pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220AB; Ufmax: 900mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: tube
Capacitance: 400pF
Leakage current: 1mA
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MBR30150CTL |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 900mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 408A
Kind of package: tube
Capacitance: 340pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 900mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 408A
Kind of package: tube
Capacitance: 340pF
Leakage current: 1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBR30150WT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO247AD; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 1V
Max. forward impulse current: 408A
Leakage current: 0.1mA
Capacitance: 400pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO247AD; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 1V
Max. forward impulse current: 408A
Leakage current: 0.1mA
Capacitance: 400pF
Kind of package: tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
SMBJ48CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.8A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.8A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.8A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ51ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ51CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 56.7÷62.7V; 7.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 51V
Breakdown voltage: 56.7...62.7V
Max. forward impulse current: 7.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TPK15KP30A |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 33.3÷36.8V; 309A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 309A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 33.3÷36.8V; 309A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 309A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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GBJ15005TB |
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Hersteller: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 15A; Ifsm: 200A
Case: GBJ
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 50V
Kind of package: tube
Leads: flat pin
Version: flat
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 15A; Ifsm: 200A
Case: GBJ
Type of bridge rectifier: single-phase
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 200A
Max. off-state voltage: 50V
Kind of package: tube
Leads: flat pin
Version: flat
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GBJ1502TB |
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Hersteller: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 200A
Max. forward impulse current: 200A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBJ
Leads: flat pin
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 15A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 15A; Ifsm: 200A
Max. forward impulse current: 200A
Kind of package: tube
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Case: GBJ
Leads: flat pin
Max. off-state voltage: 200V
Max. forward voltage: 1.1V
Load current: 15A
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GBJ1508TB |
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Hersteller: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 15A
Max. forward impulse current: 200A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.1V
Leads: flat pin
Case: GBJ
Kind of package: tube
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P4SMF26A |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
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5.0SMCJ26ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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SMBJ160ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷197V; 2.3A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷197V; 2.3A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 2.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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SMBJ160CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷197V; 2.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 178÷197V; 2.3A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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MBR760 |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 750mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 0.5mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220AC; Ufmax: 750mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 0.5mA
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SMBJ13ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 28A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 14.4÷15.9V; 28A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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S2M0025120K |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 130nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 130nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Kind of package: tube
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ST30150C |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 790mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.79V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 790mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.79V
Max. forward impulse current: 200A
Kind of package: tube
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SDURF2030CTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
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SDURF2030CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
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SK220ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Capacitance: 170pF
Leakage current: 0.5mA
Max. forward voltage: 0.9V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 200V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Capacitance: 170pF
Leakage current: 0.5mA
Max. forward voltage: 0.9V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 200V
auf Bestellung 12083 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
760+ | 0.094 EUR |
795+ | 0.09 EUR |
1005+ | 0.071 EUR |
1060+ | 0.067 EUR |
MBRF1080CTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: common anode; double
Case: ITO220AB
Kind of package: tube
Leakage current: 1mA
Capacitance: 300pF
Max. forward voltage: 0.95V
Max. forward impulse current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: common anode; double
Case: ITO220AB
Kind of package: tube
Leakage current: 1mA
Capacitance: 300pF
Max. forward voltage: 0.95V
Max. forward impulse current: 120A
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SDURF1030CT |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
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SDURF1030CTR |
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Hersteller: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
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1.5KE75ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 71.3÷78.8V; 14.8A; unidirectional; DO201AD; reel
Type of diode: TVS
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 14.8A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 71.3÷78.8V; 14.8A; unidirectional; DO201AD; reel
Type of diode: TVS
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 14.8A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel
Manufacturer series: 1.5KE
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SMAJ120ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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SMAJ120CATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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SMCJ33ATR |
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Hersteller: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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TPK15KP15CA |
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Hersteller: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; bidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 618A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; bidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 618A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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