Produkte > STARPOWER SEMICONDUCTOR > Alle Produkte des Herstellers STARPOWER SEMICONDUCTOR (229) > Seite 3 nach 4
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GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 12 Stücke |
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GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 10 Stücke |
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GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 12 Stücke |
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GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Max. off-state voltage: 650V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Max. off-state voltage: 650V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 10 Stücke |
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GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 16 Stücke |
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GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 12 Stücke |
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GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 10 Stücke |
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GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Case: C7 Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge x3; NTC thermistor Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
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GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Case: C7 Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge x3; NTC thermistor Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Anzahl je Verpackung: 8 Stücke |
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GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Pulsed collector current: 600A Topology: single transistor Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: single transistor |
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GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Pulsed collector current: 600A Topology: single transistor Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: single transistor Anzahl je Verpackung: 12 Stücke |
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GD30PJX65F1S | STARPOWER SEMICONDUCTOR | GD30PJX65F1S IGBT modules |
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GD30PJX65L2S | STARPOWER SEMICONDUCTOR | GD30PJX65L2S IGBT modules |
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GD35PJY120F2S | STARPOWER SEMICONDUCTOR | GD35PJY120F2S IGBT modules |
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GD35PJY120F5S | STARPOWER SEMICONDUCTOR | GD35PJY120F5S IGBT modules |
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GD35PJY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: L3.0 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Mechanical mounting: screw Technology: Advanced Trench FS IGBT |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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GD35PJY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 35A Case: L3.0 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 70A Mechanical mounting: screw Technology: Advanced Trench FS IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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GD3600SGX170C4S | STARPOWER SEMICONDUCTOR | GD3600SGX170C4S IGBT modules |
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GD3600SGY120C4S | STARPOWER SEMICONDUCTOR | GD3600SGY120C4S IGBT modules |
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GD400CLY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw Case: C2 62mm Topology: buck chopper Semiconductor structure: diode/transistor Pulsed collector current: 800A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 400A |
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GD400CLY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw Case: C2 62mm Topology: buck chopper Semiconductor structure: diode/transistor Pulsed collector current: 800A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 400A Anzahl je Verpackung: 12 Stücke |
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GD400CUY120C2S | STARPOWER SEMICONDUCTOR | GD400CUY120C2S IGBT modules |
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GD400HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
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GD400HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw Anzahl je Verpackung: 12 Stücke |
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GD400HFX170C2S | STARPOWER SEMICONDUCTOR | GD400HFX170C2S IGBT modules |
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GD400HFX65C2S | STARPOWER SEMICONDUCTOR | GD400HFX65C2S IGBT modules |
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GD400HFY120C2S | STARPOWER SEMICONDUCTOR | GD400HFY120C2S IGBT modules |
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GD400SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
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GD400SGU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 400A Case: C2 62mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 800A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw Anzahl je Verpackung: 12 Stücke |
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GD400SGX170C2S | STARPOWER SEMICONDUCTOR | GD400SGX170C2S IGBT modules |
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GD400SGY120C2S | STARPOWER SEMICONDUCTOR | GD400SGY120C2S IGBT modules |
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GD40PIY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mechanical mounting: screw Technology: Advanced Trench FS IGBT |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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GD40PIY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Mechanical mounting: screw Technology: Advanced Trench FS IGBT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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GD450HFX170C6S | STARPOWER SEMICONDUCTOR | GD450HFX170C6S IGBT modules |
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GD450HFX65C6S | STARPOWER SEMICONDUCTOR | GD450HFX65C6S IGBT modules |
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GD450HFY120C2S | STARPOWER SEMICONDUCTOR | GD450HFY120C2S IGBT modules |
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GD450HFY120C6S | STARPOWER SEMICONDUCTOR | GD450HFY120C6S IGBT modules |
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GD450HTX170C7S | STARPOWER SEMICONDUCTOR | GD450HTX170C7S IGBT modules |
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GD450HTY120C7S | STARPOWER SEMICONDUCTOR | GD450HTY120C7S IGBT modules |
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GD50FFX65C5S | STARPOWER SEMICONDUCTOR | GD50FFX65C5S IGBT modules |
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GD50FFY120C5S | STARPOWER SEMICONDUCTOR | GD50FFY120C5S IGBT modules |
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GD50FSX65L2S | STARPOWER SEMICONDUCTOR | GD50FSX65L2S IGBT modules |
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GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor |
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GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge OE output; NTC thermistor Anzahl je Verpackung: 16 Stücke |
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GD50HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
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GD50HFU120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 50A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw Anzahl je Verpackung: 24 Stücke |
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GD50HFX170C1S | STARPOWER SEMICONDUCTOR | GD50HFX170C1S IGBT modules |
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GD50HFX65C1S | STARPOWER SEMICONDUCTOR | GD50HFX65C1S IGBT modules |
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GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Case: C5 45mm Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: H-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A |
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GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Case: C5 45mm Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: H-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Anzahl je Verpackung: 1 Stücke |
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GD50PIX65C5S | STARPOWER SEMICONDUCTOR | GD50PIX65C5S IGBT modules |
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GD50PIY120C5SN | STARPOWER SEMICONDUCTOR | GD50PIY120C5SN IGBT modules |
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GD50PIY120C6SN | STARPOWER SEMICONDUCTOR | GD50PIY120C6SN IGBT modules |
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GD300HFX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
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GD300HFX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD300HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GD300HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFX65C8SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFX65C8SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 16 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Max. off-state voltage: 650V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GD300HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD300HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge x3; NTC thermistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
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GD300SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: single transistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: single transistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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GD300SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: single transistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Pulsed collector current: 600A
Topology: single transistor
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD30PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD30PJX65F1S IGBT modules
GD30PJX65F1S IGBT modules
Produkt ist nicht verfügbar
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GD30PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD30PJX65L2S IGBT modules
GD30PJX65L2S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD35PJY120F2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120F2S IGBT modules
GD35PJY120F2S IGBT modules
Produkt ist nicht verfügbar
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Stück im Wert von UAH
GD35PJY120F5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120F5S IGBT modules
GD35PJY120F5S IGBT modules
Produkt ist nicht verfügbar
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GD35PJY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 48.52 EUR |
GD35PJY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 48.52 EUR |
GD3600SGX170C4S |
Hersteller: STARPOWER SEMICONDUCTOR
GD3600SGX170C4S IGBT modules
GD3600SGX170C4S IGBT modules
Produkt ist nicht verfügbar
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Stück im Wert von UAH
GD3600SGY120C4S |
Hersteller: STARPOWER SEMICONDUCTOR
GD3600SGY120C4S IGBT modules
GD3600SGY120C4S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD400CLY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw
Case: C2 62mm
Topology: buck chopper
Semiconductor structure: diode/transistor
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 400A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw
Case: C2 62mm
Topology: buck chopper
Semiconductor structure: diode/transistor
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 400A
Produkt ist nicht verfügbar
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GD400CLY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw
Case: C2 62mm
Topology: buck chopper
Semiconductor structure: diode/transistor
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 400A
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1200V; screw
Case: C2 62mm
Topology: buck chopper
Semiconductor structure: diode/transistor
Pulsed collector current: 800A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 400A
Anzahl je Verpackung: 12 Stücke
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GD400CUY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400CUY120C2S IGBT modules
GD400CUY120C2S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GD400HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD400HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
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GD400HFX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFX170C2S IGBT modules
GD400HFX170C2S IGBT modules
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GD400HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFX65C2S IGBT modules
GD400HFX65C2S IGBT modules
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GD400HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFY120C2S IGBT modules
GD400HFY120C2S IGBT modules
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GD400SGU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD400SGU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
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GD400SGX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400SGX170C2S IGBT modules
GD400SGX170C2S IGBT modules
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GD400SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400SGY120C2S IGBT modules
GD400SGY120C2S IGBT modules
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GD40PIY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 67.52 EUR |
GD40PIY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 67.52 EUR |
GD450HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFX170C6S IGBT modules
GD450HFX170C6S IGBT modules
Produkt ist nicht verfügbar
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GD450HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFX65C6S IGBT modules
GD450HFX65C6S IGBT modules
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GD450HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFY120C2S IGBT modules
GD450HFY120C2S IGBT modules
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GD450HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFY120C6S IGBT modules
GD450HFY120C6S IGBT modules
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GD450HTX170C7S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HTX170C7S IGBT modules
GD450HTX170C7S IGBT modules
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GD450HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HTY120C7S IGBT modules
GD450HTY120C7S IGBT modules
Produkt ist nicht verfügbar
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GD50FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50FFX65C5S IGBT modules
GD50FFX65C5S IGBT modules
Produkt ist nicht verfügbar
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GD50FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50FFY120C5S IGBT modules
GD50FFY120C5S IGBT modules
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GD50FSX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50FSX65L2S IGBT modules
GD50FSX65L2S IGBT modules
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GD50FSY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
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GD50FSY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Anzahl je Verpackung: 16 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge OE output; NTC thermistor
Anzahl je Verpackung: 16 Stücke
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GD50HFU120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD50HFU120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
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GD50HFX170C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX170C1S IGBT modules
GD50HFX170C1S IGBT modules
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GD50HFX65C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX65C1S IGBT modules
GD50HFX65C1S IGBT modules
Produkt ist nicht verfügbar
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GD50HHU120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
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GD50HHU120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C5 45mm
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Anzahl je Verpackung: 1 Stücke
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GD50PIX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50PIX65C5S IGBT modules
GD50PIX65C5S IGBT modules
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GD50PIY120C5SN |
Hersteller: STARPOWER SEMICONDUCTOR
GD50PIY120C5SN IGBT modules
GD50PIY120C5SN IGBT modules
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GD50PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
GD50PIY120C6SN IGBT modules
GD50PIY120C6SN IGBT modules
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