Produkte > STARPOWER SEMICONDUCTOR > Alle Produkte des Herstellers STARPOWER SEMICONDUCTOR (241) > Seite 3 nach 5
Foto | Bezeichnung | Hersteller | Beschreibung |
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GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
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GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
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GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Case: C7 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Case: C7 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Mechanical mounting: screw Semiconductor structure: transistor/transistor Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
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GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: screw Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD300SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: screw Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Semiconductor structure: single transistor Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
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GD30PJX65F1S | STARPOWER SEMICONDUCTOR | GD30PJX65F1S IGBT modules |
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GD30PJX65L2S | STARPOWER SEMICONDUCTOR | GD30PJX65L2S IGBT modules |
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GD35PJY120F2S | STARPOWER SEMICONDUCTOR | GD35PJY120F2S IGBT modules |
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GD35PJY120F5S | STARPOWER SEMICONDUCTOR | GD35PJY120F5S IGBT modules |
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GD35PJY120L3S | STARPOWER SEMICONDUCTOR | GD35PJY120L3S IGBT modules |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Mechanical mounting: screw Technology: Trench FS IGBT Topology: IGBT x3 Gate-emitter voltage: ±20V Collector current: 3.6kA Pulsed collector current: 7.2kA |
Produkt ist nicht verfügbar |
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GD3600SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.7kV Case: C4 140mm Electrical mounting: screw Mechanical mounting: screw Technology: Trench FS IGBT Topology: IGBT x3 Gate-emitter voltage: ±20V Collector current: 3.6kA Pulsed collector current: 7.2kA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT x3 Gate-emitter voltage: ±20V Collector current: 3.6kA Pulsed collector current: 7.2kA |
Produkt ist nicht verfügbar |
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GD3600SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Max. off-state voltage: 1.2kV Case: C4 140mm Electrical mounting: screw Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT x3 Gate-emitter voltage: ±20V Collector current: 3.6kA Pulsed collector current: 7.2kA Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
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GD400CLY120C2S | STARPOWER SEMICONDUCTOR | GD400CLY120C2S IGBT modules |
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GD400CUY120C2S | STARPOWER SEMICONDUCTOR | GD400CUY120C2S IGBT modules |
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GD400HFU120C2S | STARPOWER SEMICONDUCTOR | GD400HFU120C2S IGBT modules |
Produkt ist nicht verfügbar |
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GD400HFX170C2S | STARPOWER SEMICONDUCTOR | GD400HFX170C2S IGBT modules |
Produkt ist nicht verfügbar |
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GD400HFX65C2S | STARPOWER SEMICONDUCTOR | GD400HFX65C2S IGBT modules |
Produkt ist nicht verfügbar |
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GD400HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C2 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD400HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C2 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD400SGU120C2S | STARPOWER SEMICONDUCTOR | GD400SGU120C2S IGBT modules |
Produkt ist nicht verfügbar |
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GD400SGX170C2S | STARPOWER SEMICONDUCTOR | GD400SGX170C2S IGBT modules |
Produkt ist nicht verfügbar |
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GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C2 62mm Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD400SGY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of semiconductor module: IGBT Topology: single transistor Mechanical mounting: screw Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Technology: Advanced Trench FS IGBT Max. off-state voltage: 1.2kV Case: C2 62mm Semiconductor structure: single transistor Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD40PIY120C5S | STARPOWER SEMICONDUCTOR | GD40PIY120C5S IGBT modules |
Produkt ist nicht verfügbar |
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GD450HFX170C6S | STARPOWER SEMICONDUCTOR | GD450HFX170C6S IGBT modules |
Produkt ist nicht verfügbar |
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GD450HFX65C6S | STARPOWER SEMICONDUCTOR | GD450HFX65C6S IGBT modules |
Produkt ist nicht verfügbar |
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GD450HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C2 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD450HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C2 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD450HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C6 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD450HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C6 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD450HTX170C7S | STARPOWER SEMICONDUCTOR | GD450HTX170C7S IGBT modules |
Produkt ist nicht verfügbar |
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GD450HTY120C7S | STARPOWER SEMICONDUCTOR | GD450HTY120C7S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: L2.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: L2.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50HFU120C1S | STARPOWER SEMICONDUCTOR | GD50HFU120C1S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50HFX170C1S | STARPOWER SEMICONDUCTOR | GD50HFX170C1S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50HFX65C1S | STARPOWER SEMICONDUCTOR | GD50HFX65C1S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C5 45mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50HHU120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C5 45mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||
GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
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GD50PIX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 50A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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GD300HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
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GD300HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
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GD300HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
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GD300HFX65C8SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C8SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 16 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 16 Stücke
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GD300HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
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GD300HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
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GD300HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
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GD300SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
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GD300SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
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GD30PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD30PJX65F1S IGBT modules
GD30PJX65F1S IGBT modules
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GD30PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD30PJX65L2S IGBT modules
GD30PJX65L2S IGBT modules
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GD35PJY120F2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120F2S IGBT modules
GD35PJY120F2S IGBT modules
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GD35PJY120F5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120F5S IGBT modules
GD35PJY120F5S IGBT modules
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GD35PJY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120L3S IGBT modules
GD35PJY120L3S IGBT modules
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.93 EUR |
2+ | 48.49 EUR |
GD3600SGX170C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
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GD3600SGX170C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.7kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Anzahl je Verpackung: 1 Stücke
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GD3600SGY120C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
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GD3600SGY120C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Anzahl je Verpackung: 8 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Max. off-state voltage: 1.2kV
Case: C4 140mm
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Anzahl je Verpackung: 8 Stücke
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GD400CLY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400CLY120C2S IGBT modules
GD400CLY120C2S IGBT modules
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GD400CUY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400CUY120C2S IGBT modules
GD400CUY120C2S IGBT modules
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GD400HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFU120C2S IGBT modules
GD400HFU120C2S IGBT modules
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GD400HFX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFX170C2S IGBT modules
GD400HFX170C2S IGBT modules
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GD400HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFX65C2S IGBT modules
GD400HFX65C2S IGBT modules
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GD400HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
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GD400HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Anzahl je Verpackung: 10 Stücke
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GD400SGU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400SGU120C2S IGBT modules
GD400SGU120C2S IGBT modules
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GD400SGX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD400SGX170C2S IGBT modules
GD400SGX170C2S IGBT modules
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GD400SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
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GD400SGY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
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GD40PIY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD40PIY120C5S IGBT modules
GD40PIY120C5S IGBT modules
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GD450HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFX170C6S IGBT modules
GD450HFX170C6S IGBT modules
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GD450HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFX65C6S IGBT modules
GD450HFX65C6S IGBT modules
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GD450HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
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GD450HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 12 Stücke
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GD450HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
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GD450HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 10 Stücke
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GD450HTX170C7S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HTX170C7S IGBT modules
GD450HTX170C7S IGBT modules
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GD450HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
GD450HTY120C7S IGBT modules
GD450HTY120C7S IGBT modules
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GD50FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FSX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50FSX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FSY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50FSY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
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GD50HFU120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFU120C1S IGBT modules
GD50HFU120C1S IGBT modules
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GD50HFX170C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX170C1S IGBT modules
GD50HFX170C1S IGBT modules
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GD50HFX65C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX65C1S IGBT modules
GD50HFX65C1S IGBT modules
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GD50HHU120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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GD50HHU120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 1 Stücke
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GD50PIX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50PIX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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