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GD300HFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
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GD300HFX65C8SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C8SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 16 Stücke
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GD300HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
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GD300HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
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GD300HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
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GD300SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
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GD300SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
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GD30PJX65F1S STARPOWER SEMICONDUCTOR GD30PJX65F1S IGBT modules
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GD30PJX65L2S STARPOWER SEMICONDUCTOR GD30PJX65L2S IGBT modules
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GD35PJY120F2S STARPOWER SEMICONDUCTOR GD35PJY120F2S IGBT modules
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GD35PJY120F5S STARPOWER SEMICONDUCTOR GD35PJY120F5S IGBT modules
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GD35PJY120L3S GD35PJY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
2+48.69 EUR
Mindestbestellmenge: 2
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GD35PJY120L3S GD35PJY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
2+48.69 EUR
Mindestbestellmenge: 2
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GD3600SGX170C4S STARPOWER SEMICONDUCTOR GD3600SGX170C4S IGBT modules
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GD3600SGY120C4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
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GD3600SGY120C4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
Anzahl je Verpackung: 8 Stücke
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GD400CLY120C2S STARPOWER SEMICONDUCTOR GD400CLY120C2S IGBT modules
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GD400CUY120C2S STARPOWER SEMICONDUCTOR GD400CUY120C2S IGBT modules
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GD400HFU120C2S STARPOWER SEMICONDUCTOR GD400HFU120C2S IGBT modules
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GD400HFX170C2S STARPOWER SEMICONDUCTOR GD400HFX170C2S IGBT modules
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GD400HFX65C2S STARPOWER SEMICONDUCTOR GD400HFX65C2S IGBT modules
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GD400HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
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GD400HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Anzahl je Verpackung: 10 Stücke
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GD400SGU120C2S STARPOWER SEMICONDUCTOR GD400SGU120C2S IGBT modules
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GD400SGX170C2S STARPOWER SEMICONDUCTOR GD400SGX170C2S IGBT modules
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GD400SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
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GD400SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
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GD40PIY120C5S GD40PIY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
2+67.54 EUR
Mindestbestellmenge: 2
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GD40PIY120C5S GD40PIY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
2+67.54 EUR
Mindestbestellmenge: 2
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GD450HFX170C6S STARPOWER SEMICONDUCTOR GD450HFX170C6S IGBT modules
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GD450HFX65C6S STARPOWER SEMICONDUCTOR GD450HFX65C6S IGBT modules
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GD450HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
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GD450HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 12 Stücke
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GD450HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
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GD450HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 10 Stücke
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GD450HTX170C7S STARPOWER SEMICONDUCTOR GD450HTX170C7S IGBT modules
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GD450HTY120C7S STARPOWER SEMICONDUCTOR GD450HTY120C7S IGBT modules
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GD50FFX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50FFX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FSX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50FSX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FSY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50FSY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
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GD50HFU120C1S STARPOWER SEMICONDUCTOR GD50HFU120C1S IGBT modules
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GD50HFX170C1S STARPOWER SEMICONDUCTOR GD50HFX170C1S IGBT modules
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GD50HFX65C1S STARPOWER SEMICONDUCTOR GD50HFX65C1S IGBT modules
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GD50HHU120C5S STARPOWER SEMICONDUCTOR GD50HHU120C5S IGBT modules
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GD50PIX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50PIX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50PIY120C5SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PIY120C5SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
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GD50PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD300HFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD300HFX65C8SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFX65C8SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 16 Stücke
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GD300HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 12 Stücke
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GD300HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD300HTY120C7S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HTY120C7S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
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GD300SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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GD300SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD30PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
GD30PJX65F1S IGBT modules
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GD30PJX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
GD30PJX65L2S IGBT modules
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GD35PJY120F2S
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120F2S IGBT modules
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GD35PJY120F5S
Hersteller: STARPOWER SEMICONDUCTOR
GD35PJY120F5S IGBT modules
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GD35PJY120L3S
GD35PJY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+48.69 EUR
Mindestbestellmenge: 2
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GD35PJY120L3S
GD35PJY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 35A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+48.69 EUR
Mindestbestellmenge: 2
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GD3600SGX170C4S
Hersteller: STARPOWER SEMICONDUCTOR
GD3600SGX170C4S IGBT modules
Produkt ist nicht verfügbar
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GD3600SGY120C4S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
Produkt ist nicht verfügbar
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GD3600SGY120C4S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Topology: IGBT x3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 3.6kA
Pulsed collector current: 7.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C4 140mm
Semiconductor structure: common gate; transistor/transistor
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
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GD400CLY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400CLY120C2S IGBT modules
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GD400CUY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400CUY120C2S IGBT modules
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GD400HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFU120C2S IGBT modules
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GD400HFX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFX170C2S IGBT modules
Produkt ist nicht verfügbar
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GD400HFX65C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400HFX65C2S IGBT modules
Produkt ist nicht verfügbar
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GD400HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Produkt ist nicht verfügbar
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GD400HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD400SGU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400SGU120C2S IGBT modules
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GD400SGX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD400SGX170C2S IGBT modules
Produkt ist nicht verfügbar
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GD400SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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GD400SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD40PIY120C5S
GD40PIY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+67.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GD40PIY120C5S
GD40PIY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+67.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GD450HFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFX170C6S IGBT modules
Produkt ist nicht verfügbar
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GD450HFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD450HFX65C6S IGBT modules
Produkt ist nicht verfügbar
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GD450HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Produkt ist nicht verfügbar
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GD450HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD450HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Produkt ist nicht verfügbar
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GD450HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Anzahl je Verpackung: 10 Stücke
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GD450HTX170C7S
Hersteller: STARPOWER SEMICONDUCTOR
GD450HTX170C7S IGBT modules
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GD450HTY120C7S
Hersteller: STARPOWER SEMICONDUCTOR
GD450HTY120C7S IGBT modules
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GD50FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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GD50FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FSX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50FSX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50FSY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50FSY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
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GD50HFU120C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFU120C1S IGBT modules
Produkt ist nicht verfügbar
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GD50HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX170C1S IGBT modules
Produkt ist nicht verfügbar
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GD50HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX65C1S IGBT modules
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GD50HHU120C5S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HHU120C5S IGBT modules
Produkt ist nicht verfügbar
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GD50PIX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PIX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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GD50PIY120C5SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PIY120C5SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD50PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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