Produkte > STARPOWER SEMICONDUCTOR > Alle Produkte des Herstellers STARPOWER SEMICONDUCTOR (22) > Seite 1 nach 1
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 10A; 96W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 10A Power dissipation: 96W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 37ns Turn-off time: 493ns |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 138W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 103ns Turn-off time: 484ns |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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DG20X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 313W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 313W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 26ns Turn-off time: 200ns |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 26ns Turn-off time: 200ns |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 348W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.19µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 36ns Turn-off time: 362ns |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.27µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 198ns Turn-off time: 668ns |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 672W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 172ns Turn-off time: 338ns |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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DG50X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 592W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.35µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 180ns Turn-off time: 607ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Mounting: THT Kind of package: tube |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 852W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 0.49µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 163ns Turn-off time: 559ns |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.1 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Topology: NTC thermistor; three-level inverter; single-phase Technology: Trench FS IGBT Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD150FFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Topology: IGBT three-phase bridge; NTC thermistor Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 150A Max. off-state voltage: 650V Pulsed collector current: 300A Case: C6 62mm Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Electrical mounting: screw Mechanical mounting: screw Technology: Trench FS IGBT Topology: IGBT x3 Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Semiconductor structure: common gate; transistor/transistor Case: C4 140mm Max. off-state voltage: 1.7kV Collector current: 2.4kA Pulsed collector current: 4.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Electrical mounting: screw Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: single transistor Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Semiconductor structure: common gate; transistor/transistor Case: C3 130mm Max. off-state voltage: 1.2kV Collector current: 2.4kA Pulsed collector current: 4.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Electrical mounting: screw Mechanical mounting: screw Technology: Advanced Trench FS IGBT Topology: IGBT x3 Type of semiconductor module: IGBT Gate-emitter voltage: ±20V Semiconductor structure: common gate; transistor/transistor Case: C4 140mm Max. off-state voltage: 1.2kV Collector current: 2.4kA Pulsed collector current: 4.8kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C7 Electrical mounting: Press-in PCB; screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD450HTY120C7S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7 Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge x3; NTC thermistor Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Case: C7 Electrical mounting: Press-in PCB; screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3.2 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: IGBT three-phase bridge OE output; NTC thermistor Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD50PJX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.0 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Trench FS IGBT Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Topology: MOSFET half-bridge Mechanical mounting: screw On-state resistance: 10mΩ Gate-source voltage: ±20V Drain current: 200A Pulsed drain current: 822A Drain-source voltage: 1.2kV Case: C2 62mm Semiconductor structure: transistor/transistor Type of semiconductor module: MOSFET transistor Electrical mounting: FASTON connectors; screw Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DG10X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| DG15X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.43 EUR |
| 24+ | 3.09 EUR |
| 27+ | 2.73 EUR |
| 30+ | 2.46 EUR |
| DG20X06T1 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 37+ | 1.94 EUR |
| 42+ | 1.73 EUR |
| DG20X06T2 |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 34+ | 2.16 EUR |
| 38+ | 1.92 EUR |
| 42+ | 1.73 EUR |
| DG25X12T2 |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.82 EUR |
| 17+ | 4.32 EUR |
| 19+ | 3.82 EUR |
| 30+ | 3.43 EUR |
| DG40X12T2 |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.23 EUR |
| 13+ | 5.62 EUR |
| 15+ | 4.96 EUR |
| 30+ | 4.46 EUR |
| DG50Q12T2 |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.87 EUR |
| 8+ | 9.78 EUR |
| 25+ | 8.64 EUR |
| DG50X12T2 |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 592W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 180ns
Turn-off time: 607ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 592W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 180ns
Turn-off time: 607ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.75 EUR |
| 9+ | 8.78 EUR |
| 10+ | 7.76 EUR |
| DG75H12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.23 EUR |
| 8+ | 10.1 EUR |
| 10+ | 8.92 EUR |
| 30+ | 8.02 EUR |
| DG75X12T2 |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 12.76 EUR |
| 7+ | 11.48 EUR |
| 10+ | 10.14 EUR |
| 30+ | 9.11 EUR |
| GD100MLX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD150FFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 650V
Pulsed collector current: 300A
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 650V
Pulsed collector current: 300A
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| GD200TLQ120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
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| GD2400SGX170C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT x3
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Semiconductor structure: common gate; transistor/transistor
Case: C4 140mm
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT x3
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Semiconductor structure: common gate; transistor/transistor
Case: C4 140mm
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Pulsed collector current: 4.8kA
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| GD2400SGY120C3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: single transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Semiconductor structure: common gate; transistor/transistor
Case: C3 130mm
Max. off-state voltage: 1.2kV
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: single transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Semiconductor structure: common gate; transistor/transistor
Case: C3 130mm
Max. off-state voltage: 1.2kV
Collector current: 2.4kA
Pulsed collector current: 4.8kA
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| GD2400SGY120C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Semiconductor structure: common gate; transistor/transistor
Case: C4 140mm
Max. off-state voltage: 1.2kV
Collector current: 2.4kA
Pulsed collector current: 4.8kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT x3
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Semiconductor structure: common gate; transistor/transistor
Case: C4 140mm
Max. off-state voltage: 1.2kV
Collector current: 2.4kA
Pulsed collector current: 4.8kA
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| GD300HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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| GD450HTY120C7S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
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| GD50FSY120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3.2
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: IGBT three-phase bridge OE output; NTC thermistor
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB
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| GD50PJX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
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| GD900HFY120P1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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| MD200HFR120C2S |
|
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Topology: MOSFET half-bridge
Mechanical mounting: screw
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Technology: SiC
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Topology: MOSFET half-bridge
Mechanical mounting: screw
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Technology: SiC
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