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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR DG10X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 196W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector current: 10A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 493ns
Power dissipation: 96W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 80nC
Turn-on time: 37ns
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 893W
Gate charge: 0.86µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 360A
Type of transistor: IGBT
Turn-on time: 282ns
Kind of package: tube
Case: TO247PLUS
Turn-off time: 334ns
Gate-emitter voltage: ±20V
Collector current: 120A
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 484ns
Power dissipation: 138W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.12µC
Turn-on time: 103ns
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DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR DG20X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 200ns
Turn-on time: 26ns
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DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR DG20X06T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 200ns
Turn-on time: 26ns
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 362ns
Power dissipation: 348W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.19µC
Turn-on time: 36ns
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DG30X07T2 DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 668ns
Power dissipation: 468W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.27µC
Turn-on time: 198ns
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 338ns
Power dissipation: 672W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.37µC
Turn-on time: 172ns
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DG50X07T2 DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
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DG75X07T2L DG75X07T2L STARPOWER SEMICONDUCTOR DG75X07T2L.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 428W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 428W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.52µC
Kind of package: tube
Turn-on time: 264ns
Turn-off time: 369ns
Features of semiconductor devices: integrated anti-parallel diode
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DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Power dissipation: 852W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.49µC
Turn-on time: 163ns
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GD1000HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100FFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100FFX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD100FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD100HFU120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD100HFX170C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100PIX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD100PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD100SGY120D6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD10PJX65F1S GD10PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
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GD10PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 10A
Case: L2.5
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD10PJY120F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 10A
Case: F1.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD10PJY120F4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 10A
Case: F4.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD10PJY120L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 10A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD1200HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD1400HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
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GD1400HFY120P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Produkt ist nicht verfügbar
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GD150HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD150HFX170C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD150HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 150A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD150HFY120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD150HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 150A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD15PJY120F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
2+53.6 EUR
3+47.33 EUR
10+42.58 EUR
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GD15PJY120L2S GD15PJY120L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L2.2
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
2+49.47 EUR
3+43.8 EUR
12+39.37 EUR
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GD200FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD200HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD200HFX170C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 200A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD225HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD2400SGX170C4S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD300HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFX170C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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GD300HFX65C8SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12 Stücke
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DG10X06T1 DG10X06T1.pdf
DG10X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 19A
Power dissipation: 196W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 21ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
43+1.99 EUR
48+1.78 EUR
54+1.59 EUR
100+1.43 EUR
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DG10X12T2 DG10X12T2.pdf
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector current: 10A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 493ns
Power dissipation: 96W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 80nC
Turn-on time: 37ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
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DG120X07T2 DG120X07T2.pdf
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Mounting: THT
Collector-emitter voltage: 650V
Power dissipation: 893W
Gate charge: 0.86µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 360A
Type of transistor: IGBT
Turn-on time: 282ns
Kind of package: tube
Case: TO247PLUS
Turn-off time: 334ns
Gate-emitter voltage: ±20V
Collector current: 120A
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.15 EUR
6+15.47 EUR
10+13.6 EUR
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DG15X12T2 DG15X12T2.pdf
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 484ns
Power dissipation: 138W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.12µC
Turn-on time: 103ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.08 EUR
24+3.68 EUR
27+3.25 EUR
30+2.93 EUR
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DG20X06T1 DG20X06T1.pdf
DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 200ns
Turn-on time: 26ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.57 EUR
37+2.31 EUR
40+2.13 EUR
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DG20X06T2 DG20X06T2.pdf
DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 200ns
Turn-on time: 26ns
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+2.86 EUR
34+2.57 EUR
38+2.28 EUR
42+2.06 EUR
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DG25X12T2 DG25X12T2.pdf
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 362ns
Power dissipation: 348W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.19µC
Turn-on time: 36ns
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.74 EUR
17+5.14 EUR
19+4.55 EUR
30+4.08 EUR
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DG30X07T2 DG30X07T2.pdf
DG30X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.76 EUR
26+3.39 EUR
29+3 EUR
32+2.69 EUR
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DG40X12T2 DG40X12T2.pdf
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 668ns
Power dissipation: 468W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.27µC
Turn-on time: 198ns
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.41 EUR
13+6.69 EUR
15+5.9 EUR
30+5.31 EUR
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DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 338ns
Power dissipation: 672W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.37µC
Turn-on time: 172ns
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
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DG50X07T2 DG50X07T2.pdf
DG50X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.5 EUR
18+4.95 EUR
20+4.38 EUR
30+3.93 EUR
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DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+13.36 EUR
8+12.02 EUR
10+10.61 EUR
30+9.54 EUR
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DG75X07T2L DG75X07T2L.pdf
DG75X07T2L
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 428W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 428W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.52µC
Kind of package: tube
Turn-on time: 264ns
Turn-off time: 369ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.69 EUR
10+8.71 EUR
25+7.71 EUR
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DG75X12T2 DG75X12T2.pdf
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Power dissipation: 852W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.49µC
Turn-on time: 163ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.18 EUR
7+13.66 EUR
10+12.07 EUR
30+10.84 EUR
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GD1000HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100FFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFU120C8S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100PIX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100SGY120D6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD10PJX65F1S
GD10PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Mechanical mounting: screw
Collector current: 10A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+46.41 EUR
3+41.04 EUR
10+36.91 EUR
Mindestbestellmenge: 2 Stücke
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GD10PJX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 10A
Case: L2.5
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD10PJY120F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 10A
Case: F1.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD10PJY120F4S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 10A
Case: F4.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD10PJY120L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 10A
Case: L2.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD1200HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD1400HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Produkt ist nicht verfügbar
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GD1400HFY120P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Produkt ist nicht verfügbar
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GD150HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 150A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFY120C8S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 150A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD15PJY120F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+53.6 EUR
3+47.33 EUR
10+42.58 EUR
Mindestbestellmenge: 2 Stücke
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GD15PJY120L2S
GD15PJY120L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L2.2
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+49.47 EUR
3+43.8 EUR
12+39.37 EUR
Mindestbestellmenge: 2 Stücke
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GD200FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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GD200HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD200HFX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 200A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD225HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 225A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD2400SGX170C4S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD300HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFX65C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300HFX65C8SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
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GD300HTY120C7S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Case: C7
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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GD300SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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