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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 493ns
Turn-on time: 37ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.25 EUR
Mindestbestellmenge: 22
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 493ns
Turn-on time: 37ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.25 EUR
30+2.39 EUR
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 893W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 0.86µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 334ns
Turn-on time: 282ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.41 EUR
6+13 EUR
10+11.43 EUR
Mindestbestellmenge: 5
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 893W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 0.86µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 334ns
Turn-on time: 282ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.41 EUR
6+13 EUR
10+11.43 EUR
30+10.27 EUR
Mindestbestellmenge: 5
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DG15X06T1 STARPOWER SEMICONDUCTOR DG15X06T1 THT IGBT transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.75 EUR
33+2.17 EUR
100+1.53 EUR
Mindestbestellmenge: 26
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 484ns
Turn-on time: 103ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
24+3.09 EUR
27+2.73 EUR
30+2.46 EUR
Mindestbestellmenge: 21
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 484ns
Turn-on time: 103ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.43 EUR
24+3.09 EUR
27+2.73 EUR
30+2.46 EUR
Mindestbestellmenge: 21
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DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 362ns
Turn-on time: 36ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.82 EUR
17+4.32 EUR
19+3.82 EUR
30+3.43 EUR
Mindestbestellmenge: 15
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 362ns
Turn-on time: 36ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.82 EUR
17+4.32 EUR
19+3.82 EUR
30+3.43 EUR
Mindestbestellmenge: 15
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DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2 THT IGBT transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.52 EUR
30+2.52 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 21
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 668ns
Turn-on time: 198ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
13+5.62 EUR
15+4.96 EUR
30+4.46 EUR
Mindestbestellmenge: 12
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 668ns
Turn-on time: 198ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.23 EUR
13+5.62 EUR
15+4.96 EUR
30+4.46 EUR
Mindestbestellmenge: 12
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 338ns
Turn-on time: 172ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.87 EUR
8+9.78 EUR
25+8.64 EUR
Mindestbestellmenge: 7
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 338ns
Turn-on time: 172ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.87 EUR
8+9.78 EUR
25+8.64 EUR
100+7.76 EUR
Mindestbestellmenge: 7
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DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2 THT IGBT transistors
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.13 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.84 EUR
9+8.17 EUR
10+7.71 EUR
Mindestbestellmenge: 7
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.84 EUR
9+8.17 EUR
10+7.71 EUR
Mindestbestellmenge: 7
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DG75X07T2L STARPOWER SEMICONDUCTOR DG75X07T2L THT IGBT transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.04 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 8
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DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6305E349BC0D4&compId=DG75X12T2.pdf?ci_sign=6870fffac38988f06ea3f058d156baec961dc468 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Turn-on time: 163ns
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.76 EUR
7+11.48 EUR
10+10.14 EUR
30+9.11 EUR
Mindestbestellmenge: 6
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DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6305E349BC0D4&compId=DG75X12T2.pdf?ci_sign=6870fffac38988f06ea3f058d156baec961dc468 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Turn-on time: 163ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.76 EUR
7+11.48 EUR
10+10.14 EUR
30+9.11 EUR
Mindestbestellmenge: 6
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GD1000HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100FFX170C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100FFX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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GD100FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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GD100HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFU120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFX170C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100HFX65C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD100PIX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100SGY120D6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: single transistor
Case: D6
Semiconductor structure: single transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJX65F1S STARPOWER SEMICONDUCTOR GD10PJX65F1S IGBT modules
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
2+43.33 EUR
3+29.2 EUR
Mindestbestellmenge: 2
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GD1200HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Produkt ist nicht verfügbar
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GD1200SGX170C3SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD1400HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
Produkt ist nicht verfügbar
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GD1400HFY120P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Produkt ist nicht verfügbar
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GD150FFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFX170C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD150HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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GD150HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD150HFY120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C8 48mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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GD150HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: L3.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD15PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD15PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L2.2
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD15PJY120F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD15PJY120F2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F2.0
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG10X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1
DG10X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
DG10X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1
DG10X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
DG10X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 493ns
Turn-on time: 37ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DG10X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 493ns
Turn-on time: 37ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.25 EUR
30+2.39 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
DG120X07T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 893W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 0.86µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 334ns
Turn-on time: 282ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+13 EUR
10+11.43 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DG120X07T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 120A
Power dissipation: 893W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 0.86µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 334ns
Turn-on time: 282ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.41 EUR
6+13 EUR
10+11.43 EUR
30+10.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DG15X06T1
Hersteller: STARPOWER SEMICONDUCTOR
DG15X06T1 THT IGBT transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.75 EUR
33+2.17 EUR
100+1.53 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
DG15X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 484ns
Turn-on time: 103ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
24+3.09 EUR
27+2.73 EUR
30+2.46 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DG15X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 484ns
Turn-on time: 103ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.43 EUR
24+3.09 EUR
27+2.73 EUR
30+2.46 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10
DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10
DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87
DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87
DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG25X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 362ns
Turn-on time: 36ns
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
17+4.32 EUR
19+3.82 EUR
30+3.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG25X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 362ns
Turn-on time: 36ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.82 EUR
17+4.32 EUR
19+3.82 EUR
30+3.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG30X07T2
Hersteller: STARPOWER SEMICONDUCTOR
DG30X07T2 THT IGBT transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.52 EUR
30+2.52 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
DG40X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 668ns
Turn-on time: 198ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
13+5.62 EUR
15+4.96 EUR
30+4.46 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DG40X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 668ns
Turn-on time: 198ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.23 EUR
13+5.62 EUR
15+4.96 EUR
30+4.46 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
DG50Q12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 338ns
Turn-on time: 172ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.87 EUR
8+9.78 EUR
25+8.64 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG50Q12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 338ns
Turn-on time: 172ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.87 EUR
8+9.78 EUR
25+8.64 EUR
100+7.76 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG50X07T2
Hersteller: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.13 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.84 EUR
9+8.17 EUR
10+7.71 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.84 EUR
9+8.17 EUR
10+7.71 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG75X07T2L
Hersteller: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.04 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DG75X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6305E349BC0D4&compId=DG75X12T2.pdf?ci_sign=6870fffac38988f06ea3f058d156baec961dc468
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Turn-on time: 163ns
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.76 EUR
7+11.48 EUR
10+10.14 EUR
30+9.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DG75X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6305E349BC0D4&compId=DG75X12T2.pdf?ci_sign=6870fffac38988f06ea3f058d156baec961dc468
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 559ns
Turn-on time: 163ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.76 EUR
7+11.48 EUR
10+10.14 EUR
30+9.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GD1000HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100FFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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GD100FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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GD100FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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GD100HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFU120C8S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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GD100HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD100PIX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
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GD100PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
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GD100SGY120D6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: single transistor
Case: D6
Semiconductor structure: single transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
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GD10PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJX65F1S IGBT modules
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+43.33 EUR
3+29.2 EUR
Mindestbestellmenge: 2
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GD1200HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
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GD1200SGX170C3SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD1400HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
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GD1400HFY120P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P2.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
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GD150FFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
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GD150FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 150A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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GD150HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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GD150HFY120C8S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C8 48mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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GD150HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 150A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD150MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 150A; L3.1; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Case: L3.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 150A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD15PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
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GD15PJX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 15A
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L2.2
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
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GD15PJY120F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F1.1
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
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GD15PJY120F2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: F2.0
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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