Produkte > STARPOWER SEMICONDUCTOR > Alle Produkte des Herstellers STARPOWER SEMICONDUCTOR (241) > Seite 1 nach 5
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DG10X06T1 | STARPOWER SEMICONDUCTOR | DG10X06T1 THT IGBT transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 10A; 96W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 10A Power dissipation: 96W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 37ns Turn-off time: 493ns |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 10A; 96W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 10A Power dissipation: 96W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Gate charge: 80nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 37ns Turn-off time: 493ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247PLUS Kind of package: tube Turn-on time: 282ns Turn-off time: 334ns Gate charge: 0.86µC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Collector-emitter voltage: 650V Power dissipation: 893W |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247PLUS Kind of package: tube Turn-on time: 282ns Turn-off time: 334ns Gate charge: 0.86µC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Collector-emitter voltage: 650V Power dissipation: 893W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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DG15X06T1 | STARPOWER SEMICONDUCTOR | DG15X06T1 THT IGBT transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 138W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 103ns Turn-off time: 484ns |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 138W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 103ns Turn-off time: 484ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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DG20X06T1 | STARPOWER SEMICONDUCTOR | DG20X06T1 THT IGBT transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 348W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.19µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 36ns Turn-off time: 362ns |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 348W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 0.19µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 36ns Turn-off time: 362ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 104 Stücke: Lieferzeit 7-14 Tag (e) |
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DG30X07T2 | STARPOWER SEMICONDUCTOR | DG30X07T2 THT IGBT transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.27µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 198ns Turn-off time: 668ns |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.27µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 198ns Turn-off time: 668ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 672W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 172ns Turn-off time: 338ns |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 672W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 172ns Turn-off time: 338ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50X07T2 | STARPOWER SEMICONDUCTOR | DG50X07T2 THT IGBT transistors |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50X12T2 | STARPOWER SEMICONDUCTOR | DG50X12T2 THT IGBT transistors |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Mounting: THT Kind of package: tube |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Mounting: THT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75X07T2L | STARPOWER SEMICONDUCTOR | DG75X07T2L THT IGBT transistors |
auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 852W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 0.49µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 163ns Turn-off time: 559ns |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 852W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 0.49µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 163ns Turn-off time: 559ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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GD1000HFX170P2S | STARPOWER SEMICONDUCTOR | GD1000HFX170P2S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFX65C5S | STARPOWER SEMICONDUCTOR | GD100FFX65C5S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C5 45mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C5 45mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HFU120C2S | STARPOWER SEMICONDUCTOR | GD100HFU120C2S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HFU120C8S | STARPOWER SEMICONDUCTOR | GD100HFU120C8S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HFX170C1S | STARPOWER SEMICONDUCTOR | GD100HFX170C1S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HFX65C1S | STARPOWER SEMICONDUCTOR | GD100HFX65C1S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C1 34mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C1 34mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C6 62mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C6 62mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100MLX65L3S | STARPOWER SEMICONDUCTOR | GD100MLX65L3S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Case: D6 Type of semiconductor module: IGBT Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: single transistor Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Case: D6 Type of semiconductor module: IGBT Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: single transistor Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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GD10PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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GD10PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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GD10PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: L2.5 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD10PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: L2.5 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD10PJY120F1S | STARPOWER SEMICONDUCTOR | GD10PJY120F1S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD10PJY120F4S | STARPOWER SEMICONDUCTOR | GD10PJY120F4S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD10PJY120L2S | STARPOWER SEMICONDUCTOR | GD10PJY120L2S IGBT modules |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD1200HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A Max. off-state voltage: 1.2kV Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C3 130mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 1.2kA Pulsed collector current: 2.4kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD1200HFY120C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A Max. off-state voltage: 1.2kV Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C3 130mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 1.2kA Pulsed collector current: 2.4kA Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Case: C3 130mm Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT x2 Technology: Trench FS IGBT Gate-emitter voltage: ±20V Max. off-state voltage: 1.7kV Collector current: 1.2kA Pulsed collector current: 2.4kA Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Case: C3 130mm Electrical mounting: screw Mechanical mounting: screw Type of semiconductor module: IGBT Topology: IGBT x2 Technology: Trench FS IGBT Gate-emitter voltage: ±20V Max. off-state voltage: 1.7kV Collector current: 1.2kA Pulsed collector current: 2.4kA Semiconductor structure: transistor/transistor Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
GD1400HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.7kV Pulsed collector current: 2.8kA Case: P2.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
DG10X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
DG10X06T1 THT IGBT transistors
DG10X06T1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG10X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.25 EUR |
DG10X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.25 EUR |
DG120X07T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.22 EUR |
7+ | 10.68 EUR |
8+ | 10.1 EUR |
DG120X07T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 15.22 EUR |
7+ | 10.68 EUR |
8+ | 10.1 EUR |
DG15X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
DG15X06T1 THT IGBT transistors
DG15X06T1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG15X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.63 EUR |
22+ | 3.26 EUR |
28+ | 2.56 EUR |
30+ | 2.42 EUR |
DG15X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.63 EUR |
22+ | 3.26 EUR |
28+ | 2.56 EUR |
30+ | 2.42 EUR |
DG20X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
DG20X06T1 THT IGBT transistors
DG20X06T1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG20X06T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG20X06T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG25X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.08 EUR |
16+ | 4.56 EUR |
20+ | 3.58 EUR |
22+ | 3.39 EUR |
DG25X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 104 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.08 EUR |
16+ | 4.56 EUR |
20+ | 3.58 EUR |
22+ | 3.39 EUR |
DG30X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG30X07T2 THT IGBT transistors
DG30X07T2 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG40X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.59 EUR |
13+ | 5.93 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
DG40X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.59 EUR |
13+ | 5.93 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
DG50Q12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.47 EUR |
9+ | 8.07 EUR |
10+ | 7.62 EUR |
DG50Q12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.47 EUR |
9+ | 8.07 EUR |
10+ | 7.62 EUR |
DG50X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
DG50X07T2 THT IGBT transistors
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.13 EUR |
21+ | 3.42 EUR |
23+ | 3.23 EUR |
DG50X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG50X12T2 THT IGBT transistors
DG50X12T2 THT IGBT transistors
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.84 EUR |
10+ | 7.22 EUR |
11+ | 6.84 EUR |
DG75H12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.84 EUR |
9+ | 8.17 EUR |
10+ | 7.71 EUR |
DG75H12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.84 EUR |
9+ | 8.17 EUR |
10+ | 7.71 EUR |
DG75X07T2L |
Hersteller: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
DG75X07T2L THT IGBT transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.04 EUR |
12+ | 6.03 EUR |
13+ | 5.71 EUR |
DG75X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.46 EUR |
8+ | 8.94 EUR |
DG75X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 13.46 EUR |
8+ | 8.94 EUR |
GD1000HFX170P2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD1000HFX170P2S IGBT modules
GD1000HFX170P2S IGBT modules
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GD100FFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
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GD100FFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
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GD100FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFX65C5S IGBT modules
GD100FFX65C5S IGBT modules
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GD100FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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GD100FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 12 Stücke
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GD100FFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
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GD100FFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
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GD100HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFU120C2S IGBT modules
GD100HFU120C2S IGBT modules
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GD100HFU120C8S |
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFU120C8S IGBT modules
GD100HFU120C8S IGBT modules
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GD100HFX170C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFX170C1S IGBT modules
GD100HFX170C1S IGBT modules
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GD100HFX65C1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFX65C1S IGBT modules
GD100HFX65C1S IGBT modules
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GD100HFY120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
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GD100HFY120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 24 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Anzahl je Verpackung: 24 Stücke
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GD100HHU120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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GD100HHU120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 10 Stücke
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GD100MLX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
GD100MLX65L3S IGBT modules
GD100MLX65L3S IGBT modules
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GD100PIX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
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GD100PIX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
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GD100PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
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GD100PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
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GD100SGY120D6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: D6
Type of semiconductor module: IGBT
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: single transistor
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: D6
Type of semiconductor module: IGBT
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: single transistor
Mechanical mounting: screw
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GD100SGY120D6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: D6
Type of semiconductor module: IGBT
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: single transistor
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: D6
Type of semiconductor module: IGBT
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: single transistor
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD10PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.2 EUR |
GD10PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 29.2 EUR |
GD10PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: L2.5
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: L2.5
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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GD10PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: L2.5
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: L2.5
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD10PJY120F1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120F1S IGBT modules
GD10PJY120F1S IGBT modules
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GD10PJY120F4S |
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120F4S IGBT modules
GD10PJY120F4S IGBT modules
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GD10PJY120L2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120L2S IGBT modules
GD10PJY120L2S IGBT modules
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GD1200HFY120C3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Produkt ist nicht verfügbar
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GD1200HFY120C3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
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GD1200SGX170C3SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Case: C3 130mm
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT x2
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Case: C3 130mm
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT x2
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Semiconductor structure: transistor/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GD1200SGX170C3SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Case: C3 130mm
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT x2
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Case: C3 130mm
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT x2
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Pulsed collector current: 2.4kA
Semiconductor structure: transistor/transistor
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
GD1400HFX170P2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH