Produkte > STARPOWER SEMICONDUCTOR > Alle Produkte des Herstellers STARPOWER SEMICONDUCTOR (285) > Seite 1 nach 5
Foto | Bezeichnung | Hersteller | Beschreibung |
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DG10X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 19A; 196W; TO220 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 19A Pulsed collector current: 30A Turn-on time: 21ns Turn-off time: 208ns Type of transistor: IGBT Power dissipation: 196W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 70nC Mounting: THT Case: TO220 |
Produkt ist nicht verfügbar |
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DG10X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 19A; 196W; TO220 Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 19A Pulsed collector current: 30A Turn-on time: 21ns Turn-off time: 208ns Type of transistor: IGBT Power dissipation: 196W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 70nC Mounting: THT Case: TO220 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 10A; 96W; TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Turn-on time: 37ns Turn-off time: 493ns Type of transistor: IGBT Power dissipation: 96W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 80nC Mounting: THT Case: TO247 |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 10A; 96W; TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 30A Turn-on time: 37ns Turn-off time: 493ns Type of transistor: IGBT Power dissipation: 96W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 80nC Mounting: THT Case: TO247 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 58 Stücke: Lieferzeit 7-14 Tag (e) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Turn-on time: 282ns Turn-off time: 334ns Type of transistor: IGBT Power dissipation: 893W Case: TO247PLUS Kind of package: tube Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.86µC |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Turn-on time: 282ns Turn-off time: 334ns Type of transistor: IGBT Power dissipation: 893W Case: TO247PLUS Kind of package: tube Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.86µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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DG15X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 24A; 235W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 235W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.1µC Kind of package: tube Turn-on time: 23ns Turn-off time: 208ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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DG15X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 24A; 235W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 235W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.1µC Kind of package: tube Turn-on time: 23ns Turn-off time: 208ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector current: 15A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 103ns Turn-off time: 484ns Collector-emitter voltage: 1200V Power dissipation: 138W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.12µC |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector current: 15A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 103ns Turn-off time: 484ns Collector-emitter voltage: 1200V Power dissipation: 138W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.12µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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DG20X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 313W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 313W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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DG20X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 313W; TO220 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 313W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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DG20X06T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 29A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 29A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 0.14µC Kind of package: tube Turn-on time: 26ns Turn-off time: 200ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Kind of package: tube Turn-off time: 362ns Type of transistor: IGBT Power dissipation: 348W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.19µC Mounting: THT Case: TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 75A Turn-on time: 36ns |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 25A; 348W; TO247 Kind of package: tube Turn-off time: 362ns Type of transistor: IGBT Power dissipation: 348W Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.19µC Mounting: THT Case: TO247 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 75A Turn-on time: 36ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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DG30X07T2 | STARPOWER SEMICONDUCTOR | DG30X07T2 THT IGBT transistors |
Produkt ist nicht verfügbar |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 120A Turn-on time: 198ns Turn-off time: 668ns Collector-emitter voltage: 1200V Power dissipation: 468W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.27µC |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector current: 40A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 120A Turn-on time: 198ns Turn-off time: 668ns Collector-emitter voltage: 1200V Power dissipation: 468W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.27µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 172ns Turn-off time: 338ns Collector-emitter voltage: 1200V Power dissipation: 672W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.37µC |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 172ns Turn-off time: 338ns Collector-emitter voltage: 1200V Power dissipation: 672W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.37µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50X07T2 | STARPOWER SEMICONDUCTOR | DG50X07T2 THT IGBT transistors |
auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 180ns Turn-off time: 607ns Collector-emitter voltage: 1200V Power dissipation: 592W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.35µC |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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DG50X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS Type of transistor: IGBT Collector current: 50A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 150A Turn-on time: 180ns Turn-off time: 607ns Collector-emitter voltage: 1200V Power dissipation: 592W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.35µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR | DG75H12T2 THT IGBT transistors |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75X07T2L | STARPOWER SEMICONDUCTOR | DG75X07T2L THT IGBT transistors |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector current: 75A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 225A Turn-on time: 163ns Turn-off time: 559ns Collector-emitter voltage: 1200V Power dissipation: 852W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.49µC |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector current: 75A Case: TO247PLUS Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 225A Turn-on time: 163ns Turn-off time: 559ns Collector-emitter voltage: 1200V Power dissipation: 852W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.49µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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GD1000HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 1kA Case: P2.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD1000HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 1kA Case: P2.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2kA Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
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GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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GD100FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
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GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C5 45mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
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GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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GD100HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C2 62mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw Anzahl je Verpackung: 12 Stücke |
Produkt ist nicht verfügbar |
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GD100HFU120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C8 48mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100HFU120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C8 48mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
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GD100HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.7kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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GD100HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 650V Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C1 34mm Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: NPT Ultra Fast IGBT Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 100A Case: L3.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 100A Case: L3.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
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GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 650V Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 100A Case: C6 62mm Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 100A Case: D6 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Type of module: IGBT Semiconductor structure: single transistor Topology: single transistor Max. off-state voltage: 1.2kV Collector current: 100A Case: D6 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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GD10PJX65F1S | STARPOWER SEMICONDUCTOR | GD10PJX65F1S IGBT modules |
Produkt ist nicht verfügbar |
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GD10PJX65L2S | STARPOWER SEMICONDUCTOR | GD10PJX65L2S IGBT modules |
Produkt ist nicht verfügbar |
DG10X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
Produkt ist nicht verfügbar
DG10X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Case: TO220
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DG10X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 3 EUR |
27+ | 2.69 EUR |
35+ | 2.1 EUR |
36+ | 1.99 EUR |
DG10X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 3 EUR |
27+ | 2.69 EUR |
35+ | 2.1 EUR |
36+ | 1.99 EUR |
DG120X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.22 EUR |
7+ | 10.68 EUR |
8+ | 10.1 EUR |
DG120X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Case: TO247PLUS
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.22 EUR |
7+ | 10.68 EUR |
8+ | 10.1 EUR |
DG15X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.13 EUR |
38+ | 1.92 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
DG15X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 24A; 235W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 235W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 208ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 73 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.13 EUR |
38+ | 1.92 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
DG15X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.82 EUR |
21+ | 3.43 EUR |
22+ | 3.25 EUR |
DG15X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.82 EUR |
21+ | 3.43 EUR |
22+ | 3.25 EUR |
DG20X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.4 EUR |
34+ | 2.16 EUR |
45+ | 1.62 EUR |
47+ | 1.53 EUR |
DG20X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.4 EUR |
34+ | 2.16 EUR |
45+ | 1.62 EUR |
47+ | 1.53 EUR |
DG20X06T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
DG20X06T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
26+ | 2.75 EUR |
DG25X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.21 EUR |
DG25X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.21 EUR |
13+ | 5.51 EUR |
DG30X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG30X07T2 THT IGBT transistors
DG30X07T2 THT IGBT transistors
Produkt ist nicht verfügbar
DG40X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.94 EUR |
12+ | 6.25 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
DG40X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector current: 40A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 198ns
Turn-off time: 668ns
Collector-emitter voltage: 1200V
Power dissipation: 468W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.27µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 6.94 EUR |
12+ | 6.25 EUR |
16+ | 4.65 EUR |
17+ | 4.39 EUR |
DG50Q12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 12.07 EUR |
9+ | 8.07 EUR |
10+ | 7.62 EUR |
DG50Q12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 172ns
Turn-off time: 338ns
Collector-emitter voltage: 1200V
Power dissipation: 672W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.37µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 12.07 EUR |
9+ | 8.07 EUR |
10+ | 7.62 EUR |
DG50X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
DG50X07T2 THT IGBT transistors
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.13 EUR |
21+ | 3.42 EUR |
23+ | 3.23 EUR |
DG50X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.84 EUR |
10+ | 7.24 EUR |
11+ | 6.84 EUR |
DG50X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector current: 50A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Turn-on time: 180ns
Turn-off time: 607ns
Collector-emitter voltage: 1200V
Power dissipation: 592W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.35µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 10.84 EUR |
10+ | 7.24 EUR |
11+ | 6.84 EUR |
DG75H12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG75H12T2 THT IGBT transistors
DG75H12T2 THT IGBT transistors
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 12.47 EUR |
9+ | 8.17 EUR |
10+ | 7.72 EUR |
DG75X07T2L |
Hersteller: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
DG75X07T2L THT IGBT transistors
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.04 EUR |
12+ | 6.03 EUR |
13+ | 5.71 EUR |
DG75X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 14.17 EUR |
7+ | 10.21 EUR |
DG75X12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector current: 75A
Case: TO247PLUS
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Turn-on time: 163ns
Turn-off time: 559ns
Collector-emitter voltage: 1200V
Power dissipation: 852W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.49µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 14.17 EUR |
7+ | 10.21 EUR |
GD1000HFX170P2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD1000HFX170P2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 8 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 1kA
Case: P2.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
GD100FFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100FFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
GD100FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
GD100FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
GD100FFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100FFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
GD100HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
GD100HFU120C8S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100HFU120C8S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
GD100HFX170C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100HFX170C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
GD100HFX65C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100HFX65C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
GD100HFY120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100HFY120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
GD100HHU120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100HHU120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
GD100MLX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100MLX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 100A
Case: L3.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
GD100PIX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100PIX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
GD100PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
GD100SGY120D6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
GD100SGY120D6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
GD10PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJX65F1S IGBT modules
GD10PJX65F1S IGBT modules
Produkt ist nicht verfügbar
GD10PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJX65L2S IGBT modules
GD10PJX65L2S IGBT modules
Produkt ist nicht verfügbar