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DG10X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 19A; 196W; TO220 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Mounting: THT Gate charge: 70nC Turn-on time: 21ns Turn-off time: 208ns Power dissipation: 196W Collector current: 19A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Case: TO220 |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
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DG10X06T1 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 19A; 196W; TO220 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Mounting: THT Gate charge: 70nC Turn-on time: 21ns Turn-off time: 208ns Power dissipation: 196W Collector current: 19A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Case: TO220 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 187 Stücke: Lieferzeit 7-14 Tag (e) |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 10A; 96W; TO247 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Mounting: THT Gate charge: 80nC Turn-on time: 37ns Turn-off time: 493ns Power dissipation: 96W Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 1.2kV Case: TO247 |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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DG10X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 10A; 96W; TO247 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Mounting: THT Gate charge: 80nC Turn-on time: 37ns Turn-off time: 493ns Power dissipation: 96W Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 1.2kV Case: TO247 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247PLUS Kind of package: tube Turn-on time: 282ns Turn-off time: 334ns Gate charge: 0.86µC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Collector-emitter voltage: 650V Power dissipation: 893W |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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DG120X07T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO247PLUS Kind of package: tube Turn-on time: 282ns Turn-off time: 334ns Gate charge: 0.86µC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Collector-emitter voltage: 650V Power dissipation: 893W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| DG15X06T1 | STARPOWER SEMICONDUCTOR | DG15X06T1 THT IGBT transistors |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 138W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 103ns Turn-off time: 484ns |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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DG15X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 138W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 103ns Turn-off time: 484ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 36 Stücke: Lieferzeit 7-14 Tag (e) |
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| DG20X06T1 | STARPOWER SEMICONDUCTOR | DG20X06T1 THT IGBT transistors |
auf Bestellung 59 Stücke: Lieferzeit 7-14 Tag (e) |
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| DG20X06T2 | STARPOWER SEMICONDUCTOR | DG20X06T2 THT IGBT transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 25A; 348W; TO247 Kind of package: tube Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Turn-on time: 36ns Gate charge: 0.19µC Turn-off time: 362ns Power dissipation: 348W Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 75A Collector-emitter voltage: 1.2kV Case: TO247 |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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DG25X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 25A; 348W; TO247 Kind of package: tube Mounting: THT Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Turn-on time: 36ns Gate charge: 0.19µC Turn-off time: 362ns Power dissipation: 348W Gate-emitter voltage: ±20V Collector current: 25A Pulsed collector current: 75A Collector-emitter voltage: 1.2kV Case: TO247 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| DG30X07T2 | STARPOWER SEMICONDUCTOR | DG30X07T2 THT IGBT transistors |
auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.27µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 198ns Turn-off time: 668ns |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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DG40X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 40A; 468W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 468W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 0.27µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 198ns Turn-off time: 668ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 81 Stücke: Lieferzeit 7-14 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 672W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 172ns Turn-off time: 338ns |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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DG50Q12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 672W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 172ns Turn-off time: 338ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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| DG50X07T2 | STARPOWER SEMICONDUCTOR | DG50X07T2 THT IGBT transistors |
auf Bestellung 128 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Mounting: THT Kind of package: tube |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75H12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Mounting: THT Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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| DG75X07T2L | STARPOWER SEMICONDUCTOR | DG75X07T2L THT IGBT transistors |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 852W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 0.49µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 163ns Turn-off time: 559ns |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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DG75X12T2 | STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 852W Case: TO247PLUS Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 0.49µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 163ns Turn-off time: 559ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD1000HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A Collector current: 1kA Pulsed collector current: 2kA Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Topology: IGBT half-bridge Case: P2.0 Semiconductor structure: transistor/transistor Electrical mounting: screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100FFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100FFX65C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 650V Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C5 45mm Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100FFY120C5S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C5 45mm Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100FFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Case: C2 62mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100HFU120C8S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Case: C8 48mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100HFX170C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100HFX65C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 650V Technology: Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100HFY120C1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Case: C1 34mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: NPT Ultra Fast IGBT Topology: H-bridge Case: C6 62mm Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.1 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Topology: NTC thermistor; three-level inverter; single-phase Technology: Trench FS IGBT Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100PIX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 650V Technology: Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: C6 62mm Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100PIY120C6SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Case: C6 62mm Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD100SGY120D6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Topology: single transistor Case: D6 Semiconductor structure: single transistor Electrical mounting: screw Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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GD10PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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GD10PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 24 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD10PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A Collector current: 10A Case: L2.5 Gate-emitter voltage: ±20V Pulsed collector current: 20A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD1200SGX170C3SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 1.2kA Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 2.4kA Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD1400HFX170P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.7kV Pulsed collector current: 2.8kA Case: P2.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD1400HFY120P2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Semiconductor structure: transistor/transistor Collector current: 1.4kA Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Pulsed collector current: 2.8kA Case: P2.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD150HHU120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Technology: NPT Ultra Fast IGBT Case: C6 62mm Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 150A Pulsed collector current: 300A Electrical mounting: Press-in PCB Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Mechanical mounting: screw Topology: H-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD15PJY120L2S | STARPOWER SEMICONDUCTOR | GD15PJY120L2S IGBT modules |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD1600SGX170C3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x2 Max. off-state voltage: 1.7kV Collector current: 1.6kA Case: C3 130mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 3.2kA Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Case: L3 Type of semiconductor module: IGBT Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 400A Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD20PJX65F1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Collector current: 20A Case: F1.1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD20PJX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A Collector current: 20A Case: L2.2 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 650V Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Semiconductor structure: diode/transistor Technology: Trench FS IGBT Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Type of semiconductor module: IGBT Semiconductor structure: common gate; transistor/transistor Topology: IGBT x3 Max. off-state voltage: 1.7kV Collector current: 2.4kA Case: C4 140mm Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 4.8kA Technology: Trench FS IGBT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFU120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: NPT Ultra Fast IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFX170C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFX170C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.7kV Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFX65C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFX65C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFX65C8SN | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C8 48mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 650V Technology: Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFY120C2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: FASTON connectors; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| GD300HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Max. off-state voltage: 1.2kV Technology: Advanced Trench FS IGBT Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Mechanical mounting: screw Semiconductor structure: transistor/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DG10X06T1 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.76 EUR |
| 46+ | 1.59 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.17 EUR |
| DG10X06T1 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 70nC
Turn-on time: 21ns
Turn-off time: 208ns
Power dissipation: 196W
Collector current: 19A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Case: TO220
Anzahl je Verpackung: 1 Stücke
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.76 EUR |
| 46+ | 1.59 EUR |
| 58+ | 1.24 EUR |
| 61+ | 1.17 EUR |
| DG10X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 80nC
Turn-on time: 37ns
Turn-off time: 493ns
Power dissipation: 96W
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 80nC
Turn-on time: 37ns
Turn-off time: 493ns
Power dissipation: 96W
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
Case: TO247
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| DG10X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 80nC
Turn-on time: 37ns
Turn-off time: 493ns
Power dissipation: 96W
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Mounting: THT
Gate charge: 80nC
Turn-on time: 37ns
Turn-off time: 493ns
Power dissipation: 96W
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 1.2kV
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
| DG120X07T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.22 EUR |
| 7+ | 10.68 EUR |
| 8+ | 10.1 EUR |
| DG120X07T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.22 EUR |
| 7+ | 10.68 EUR |
| 8+ | 10.1 EUR |
| DG15X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
DG15X06T1 THT IGBT transistors
DG15X06T1 THT IGBT transistors
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.75 EUR |
| 33+ | 2.17 EUR |
| 100+ | 1.53 EUR |
| DG15X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.63 EUR |
| 22+ | 3.26 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| DG15X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.63 EUR |
| 22+ | 3.26 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| DG20X06T1 |
Hersteller: STARPOWER SEMICONDUCTOR
DG20X06T1 THT IGBT transistors
DG20X06T1 THT IGBT transistors
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.4 EUR |
| 45+ | 1.62 EUR |
| 47+ | 1.53 EUR |
| DG20X06T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG20X06T2 THT IGBT transistors
DG20X06T2 THT IGBT transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 38+ | 1.92 EUR |
| 40+ | 1.79 EUR |
| 43+ | 1.69 EUR |
| DG25X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 36ns
Gate charge: 0.19µC
Turn-off time: 362ns
Power dissipation: 348W
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Case: TO247
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 36ns
Gate charge: 0.19µC
Turn-off time: 362ns
Power dissipation: 348W
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Case: TO247
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.08 EUR |
| 16+ | 4.56 EUR |
| 20+ | 3.58 EUR |
| 22+ | 3.39 EUR |
| DG25X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 36ns
Gate charge: 0.19µC
Turn-off time: 362ns
Power dissipation: 348W
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Kind of package: tube
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 36ns
Gate charge: 0.19µC
Turn-off time: 362ns
Power dissipation: 348W
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.08 EUR |
| 16+ | 4.56 EUR |
| 20+ | 3.58 EUR |
| 22+ | 3.39 EUR |
| DG30X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG30X07T2 THT IGBT transistors
DG30X07T2 THT IGBT transistors
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.52 EUR |
| 30+ | 2.52 EUR |
| 31+ | 2.35 EUR |
| 33+ | 2.22 EUR |
| DG40X12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.59 EUR |
| 13+ | 5.93 EUR |
| 16+ | 4.65 EUR |
| 17+ | 4.39 EUR |
| DG40X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.59 EUR |
| 13+ | 5.93 EUR |
| 16+ | 4.65 EUR |
| 17+ | 4.39 EUR |
| DG50Q12T2 |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.47 EUR |
| 9+ | 8.07 EUR |
| 10+ | 7.62 EUR |
| DG50Q12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.47 EUR |
| 9+ | 8.07 EUR |
| 10+ | 7.62 EUR |
| DG50X07T2 |
Hersteller: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
DG50X07T2 THT IGBT transistors
auf Bestellung 128 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.13 EUR |
| 21+ | 3.42 EUR |
| 23+ | 3.23 EUR |
| DG75H12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.84 EUR |
| 9+ | 8.17 EUR |
| 10+ | 7.71 EUR |
| DG75H12T2 |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.84 EUR |
| 9+ | 8.17 EUR |
| 10+ | 7.71 EUR |
| DG75X07T2L |
Hersteller: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
DG75X07T2L THT IGBT transistors
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.04 EUR |
| 12+ | 6.03 EUR |
| 13+ | 5.71 EUR |
| DG75X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.46 EUR |
| 8+ | 8.94 EUR |
| DG75X12T2 |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 13.46 EUR |
| 8+ | 8.94 EUR |
| GD1000HFX170P2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Collector current: 1kA
Pulsed collector current: 2kA
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: P2.0
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| GD100FFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100FFX65C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100FFY120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100FFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100HFU120C8S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C8 48mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Topology: IGBT half-bridge
Case: C8 48mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100HFX170C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100HFX65C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100HFY120C1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Case: C1 34mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100HHU120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Case: C6 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100MLX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100PIX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: C6 62mm
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD100SGY120D6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: single transistor
Case: D6
Semiconductor structure: single transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: single transistor
Case: D6
Semiconductor structure: single transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD10PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 29.2 EUR |
| GD10PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 29.2 EUR |
| GD10PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: L2.5
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Collector current: 10A
Case: L2.5
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD1200SGX170C3SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GD1400HFX170P2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.7kV
Pulsed collector current: 2.8kA
Case: P2.0
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| GD1400HFY120P2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Case: P2.0
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Pulsed collector current: 2.8kA
Case: P2.0
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| GD150HHU120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C6 62mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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| GD15PJY120L2S |
Hersteller: STARPOWER SEMICONDUCTOR
GD15PJY120L2S IGBT modules
GD15PJY120L2S IGBT modules
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 46.19 EUR |
| 3+ | 31.13 EUR |
| GD1600SGX170C3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x2; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.6kA
Case: C3 130mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 3.2kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD200TLQ120L3S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
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| GD20PJX65F1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: F1.1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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| GD20PJX65L2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: L2.2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 20A
Collector current: 20A
Case: L2.2
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 650V
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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| GD2400SGX170C4S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw
Type of semiconductor module: IGBT
Semiconductor structure: common gate; transistor/transistor
Topology: IGBT x3
Max. off-state voltage: 1.7kV
Collector current: 2.4kA
Case: C4 140mm
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 4.8kA
Technology: Trench FS IGBT
Mechanical mounting: screw
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| GD300HFU120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: NPT Ultra Fast IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX170C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX65C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFX65C8SN |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C8 48mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 650V
Technology: Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFY120C2S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| GD300HFY120C6S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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