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DG10X06T1 STARPOWER SEMICONDUCTOR DG10X06T1 THT IGBT transistors
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Case: TO247
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.00 EUR
27+2.65 EUR
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Case: TO247
Anzahl je Verpackung: 1 Stücke
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24+3.00 EUR
27+2.65 EUR
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
auf Bestellung 37 Stücke:
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5+15.22 EUR
7+10.68 EUR
8+10.10 EUR
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
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5+15.22 EUR
7+10.68 EUR
8+10.10 EUR
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DG15X06T1 STARPOWER SEMICONDUCTOR DG15X06T1 THT IGBT transistors
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
Gate charge: 0.12µC
auf Bestellung 32 Stücke:
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20+3.63 EUR
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28+2.56 EUR
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.63 EUR
22+3.26 EUR
28+2.56 EUR
30+2.42 EUR
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DG20X06T1 STARPOWER SEMICONDUCTOR DG20X06T1 THT IGBT transistors
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DG20X06T2 STARPOWER SEMICONDUCTOR DG20X06T2 THT IGBT transistors
auf Bestellung 80 Stücke:
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27+2.67 EUR
38+1.92 EUR
40+1.79 EUR
43+1.69 EUR
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
auf Bestellung 41 Stücke:
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15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.39 EUR
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DG30X07T2 DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 78 Stücke:
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22+3.35 EUR
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31+2.33 EUR
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DG30X07T2 DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
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22+3.35 EUR
24+3.00 EUR
31+2.33 EUR
33+2.22 EUR
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 198ns
Turn-off time: 668ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
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11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 198ns
Turn-off time: 668ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
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11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
Gate charge: 0.37µC
auf Bestellung 35 Stücke:
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7+11.47 EUR
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
Gate charge: 0.37µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
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DG50X07T2 DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 35 Stücke:
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23+3.23 EUR
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DG50X07T2 DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
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15+4.88 EUR
17+4.39 EUR
21+3.42 EUR
23+3.23 EUR
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DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR DG50X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
Gate charge: 0.35µC
auf Bestellung 43 Stücke:
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7+10.30 EUR
10+7.24 EUR
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DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR DG50X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
Gate charge: 0.35µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
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7+10.30 EUR
10+7.24 EUR
11+6.84 EUR
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
auf Bestellung 5 Stücke:
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
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5+14.30 EUR
6+11.91 EUR
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DG75X07T2L STARPOWER SEMICONDUCTOR DG75X07T2L THT IGBT transistors
auf Bestellung 28 Stücke:
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8+9.04 EUR
12+6.03 EUR
13+5.71 EUR
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DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 163ns
Turn-off time: 559ns
Type of transistor: IGBT
Power dissipation: 852W
Kind of package: tube
Gate charge: 0.49µC
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DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 163ns
Turn-off time: 559ns
Type of transistor: IGBT
Power dissipation: 852W
Kind of package: tube
Gate charge: 0.49µC
Anzahl je Verpackung: 1 Stücke
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Lieferzeit 7-14 Tag (e)
6+13.46 EUR
8+8.95 EUR
Mindestbestellmenge: 6
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GD1000HFX170P2S STARPOWER SEMICONDUCTOR GD1000HFX170P2S IGBT modules
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GD100FFX170C6S STARPOWER SEMICONDUCTOR GD100FFX170C6S IGBT modules
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GD100FFX65C5S STARPOWER SEMICONDUCTOR GD100FFX65C5S IGBT modules
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GD100FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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GD100FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Anzahl je Verpackung: 12 Stücke
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GD100FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
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GD100FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Anzahl je Verpackung: 10 Stücke
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GD100HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD100HFU120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
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GD100HFU120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
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GD100HFU120C8S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
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GD100HFX170C1S STARPOWER SEMICONDUCTOR GD100HFX170C1S IGBT modules
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GD100HFX65C1S STARPOWER SEMICONDUCTOR GD100HFX65C1S IGBT modules
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GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C1 34mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
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GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C1 34mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Anzahl je Verpackung: 24 Stücke
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GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
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GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Anzahl je Verpackung: 10 Stücke
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Produkt ist nicht verfügbar
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 16 Stücke
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GD100PIX65C6S STARPOWER SEMICONDUCTOR GD100PIX65C6S IGBT modules
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GD100PIY120C6SN STARPOWER SEMICONDUCTOR GD100PIY120C6SN IGBT modules
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GD100SGY120D6S STARPOWER SEMICONDUCTOR GD100SGY120D6S IGBT modules
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GD10PJX65F1S GD10PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.20 EUR
Mindestbestellmenge: 3
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GD10PJX65F1S GD10PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
3+29.20 EUR
Mindestbestellmenge: 3
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GD10PJX65L2S STARPOWER SEMICONDUCTOR GD10PJX65L2S IGBT modules
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GD10PJY120F1S STARPOWER SEMICONDUCTOR GD10PJY120F1S IGBT modules
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GD10PJY120F4S STARPOWER SEMICONDUCTOR GD10PJY120F4S IGBT modules
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GD10PJY120L2S STARPOWER SEMICONDUCTOR GD10PJY120L2S IGBT modules
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GD1200HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C3 130mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
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GD1200HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C3 130mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Anzahl je Verpackung: 10 Stücke
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GD1200SGX170C3SN STARPOWER SEMICONDUCTOR GD1200SGX170C3SN IGBT modules
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GD1400HFX170P2S STARPOWER SEMICONDUCTOR GD1400HFX170P2S IGBT modules
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GD1400HFY120P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Pulsed collector current: 2.8kA
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: P2.0
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
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DG10X06T1
Hersteller: STARPOWER SEMICONDUCTOR
DG10X06T1 THT IGBT transistors
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DG10X12T2 DG10X12T2.pdf
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Case: TO247
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.00 EUR
27+2.65 EUR
Mindestbestellmenge: 24
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DG10X12T2 DG10X12T2.pdf
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Case: TO247
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.00 EUR
27+2.65 EUR
Mindestbestellmenge: 24
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DG120X07T2 DG120X07T2.pdf
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.68 EUR
8+10.10 EUR
Mindestbestellmenge: 5
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DG120X07T2 DG120X07T2.pdf
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.68 EUR
8+10.10 EUR
Mindestbestellmenge: 5
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DG15X06T1
Hersteller: STARPOWER SEMICONDUCTOR
DG15X06T1 THT IGBT transistors
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DG15X12T2 DG15X12T2.pdf
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
Gate charge: 0.12µC
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
22+3.26 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 20
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DG15X12T2 DG15X12T2.pdf
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.63 EUR
22+3.26 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 20
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DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
DG20X06T1 THT IGBT transistors
Produkt ist nicht verfügbar
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DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
DG20X06T2 THT IGBT transistors
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.67 EUR
38+1.92 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 27
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DG25X12T2 DG25X12T2.pdf
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.39 EUR
Mindestbestellmenge: 15
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DG25X12T2 DG25X12T2.pdf
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Mounting: THT
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 75A
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.39 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG30X07T2 DG30X07T2.pdf
DG30X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
24+3.00 EUR
31+2.33 EUR
33+2.22 EUR
Mindestbestellmenge: 22
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DG30X07T2 DG30X07T2.pdf
DG30X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 208W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 208W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.35 EUR
24+3.00 EUR
31+2.33 EUR
33+2.22 EUR
Mindestbestellmenge: 22
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DG40X12T2 DG40X12T2.pdf
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 198ns
Turn-off time: 668ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
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DG40X12T2 DG40X12T2.pdf
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 198ns
Turn-off time: 668ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
Gate charge: 0.37µC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
Mindestbestellmenge: 7
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DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
Gate charge: 0.37µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG50X07T2 DG50X07T2.pdf
DG50X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.88 EUR
17+4.39 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG50X07T2 DG50X07T2.pdf
DG50X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 714W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 714W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 200ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.88 EUR
17+4.39 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG50X12T2 DG50X12T2.pdf
DG50X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
Gate charge: 0.35µC
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.30 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 7
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DG50X12T2 DG50X12T2.pdf
DG50X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
Gate charge: 0.35µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 43 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.30 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 7
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DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
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DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.30 EUR
6+11.91 EUR
Mindestbestellmenge: 5
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DG75X07T2L
Hersteller: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.04 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 8
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DG75X12T2 DG75X12T2.pdf
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 163ns
Turn-off time: 559ns
Type of transistor: IGBT
Power dissipation: 852W
Kind of package: tube
Gate charge: 0.49µC
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.46 EUR
8+8.95 EUR
Mindestbestellmenge: 6
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DG75X12T2 DG75X12T2.pdf
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Collector current: 75A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 163ns
Turn-off time: 559ns
Type of transistor: IGBT
Power dissipation: 852W
Kind of package: tube
Gate charge: 0.49µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.46 EUR
8+8.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GD1000HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
GD1000HFX170P2S IGBT modules
Produkt ist nicht verfügbar
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GD100FFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFX170C6S IGBT modules
Produkt ist nicht verfügbar
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GD100FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFX65C5S IGBT modules
Produkt ist nicht verfügbar
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GD100FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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GD100FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD100FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Produkt ist nicht verfügbar
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GD100FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C6 62mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD100HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD100HFU120C8S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFU120C8S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C8 48mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: NPT Ultra Fast IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
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GD100HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFX170C1S IGBT modules
Produkt ist nicht verfügbar
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GD100HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFX65C1S IGBT modules
Produkt ist nicht verfügbar
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GD100HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C1 34mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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GD100HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Pulsed collector current: 200A
Collector current: 100A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C1 34mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
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GD100HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Produkt ist nicht verfügbar
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GD100HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Produkt ist nicht verfügbar
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GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
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GD100PIX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100PIX65C6S IGBT modules
Produkt ist nicht verfügbar
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GD100PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
GD100PIY120C6SN IGBT modules
Produkt ist nicht verfügbar
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GD100SGY120D6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100SGY120D6S IGBT modules
Produkt ist nicht verfügbar
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GD10PJX65F1S
GD10PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.20 EUR
Mindestbestellmenge: 3
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GD10PJX65F1S
GD10PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+29.20 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJX65L2S IGBT modules
Produkt ist nicht verfügbar
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GD10PJY120F1S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120F1S IGBT modules
Produkt ist nicht verfügbar
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GD10PJY120F4S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120F4S IGBT modules
Produkt ist nicht verfügbar
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GD10PJY120L2S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120L2S IGBT modules
Produkt ist nicht verfügbar
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GD1200HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C3 130mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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GD1200HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Pulsed collector current: 2.4kA
Collector current: 1.2kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: C3 130mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD1200SGX170C3SN
Hersteller: STARPOWER SEMICONDUCTOR
GD1200SGX170C3SN IGBT modules
Produkt ist nicht verfügbar
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GD1400HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
GD1400HFX170P2S IGBT modules
Produkt ist nicht verfügbar
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GD1400HFY120P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Pulsed collector current: 2.8kA
Collector current: 1.4kA
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Case: P2.0
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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