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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Case: TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
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DG10X06T1 DG10X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Case: TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
24+3 EUR
25+2.86 EUR
Mindestbestellmenge: 24
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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
24+3 EUR
25+2.86 EUR
Mindestbestellmenge: 24
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.22 EUR
7+10.68 EUR
8+10.1 EUR
Mindestbestellmenge: 5
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.22 EUR
7+10.68 EUR
8+10.1 EUR
Mindestbestellmenge: 5
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DG15X06T1 STARPOWER SEMICONDUCTOR DG15X06T1 THT IGBT transistors
Produkt ist nicht verfügbar
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.63 EUR
22+3.26 EUR
23+3.1 EUR
Mindestbestellmenge: 20
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.63 EUR
22+3.26 EUR
23+3.1 EUR
Mindestbestellmenge: 20
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DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
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DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.65 EUR
29+2.46 EUR
Mindestbestellmenge: 27
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DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
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DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.65 EUR
Mindestbestellmenge: 27
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.37 EUR
Mindestbestellmenge: 15
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.37 EUR
Mindestbestellmenge: 15
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DG30X07T2 STARPOWER SEMICONDUCTOR DG30X07T2 THT IGBT transistors
Produkt ist nicht verfügbar
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.27µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 198ns
Turn-off time: 668ns
Type of transistor: IGBT
Power dissipation: 468W
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.27µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 198ns
Turn-off time: 668ns
Type of transistor: IGBT
Power dissipation: 468W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
Mindestbestellmenge: 7
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
Mindestbestellmenge: 7
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DG50X07T2 STARPOWER SEMICONDUCTOR DG50X07T2 THT IGBT transistors
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.13 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
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DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB18053FFAF7120D4&compId=DG50X12T2.pdf?ci_sign=7ad2ac27beed18285d8998085ecf9ffa3dc88c79 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.35µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.3 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 7
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DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB18053FFAF7120D4&compId=DG50X12T2.pdf?ci_sign=7ad2ac27beed18285d8998085ecf9ffa3dc88c79 Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.35µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.3 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 7
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
1+71.5 EUR
3+23.84 EUR
6+11.91 EUR
30+7.74 EUR
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DG75X07T2L STARPOWER SEMICONDUCTOR DG75X07T2L THT IGBT transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.04 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 8
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DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2 THT IGBT transistors
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
6+14.17 EUR
8+8.94 EUR
Mindestbestellmenge: 6
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GD1000HFX170P2S STARPOWER SEMICONDUCTOR GD1000HFX170P2S IGBT modules
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GD100FFX170C6S STARPOWER SEMICONDUCTOR GD100FFX170C6S IGBT modules
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GD100FFX65C5S STARPOWER SEMICONDUCTOR GD100FFX65C5S IGBT modules
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GD100FFY120C5S STARPOWER SEMICONDUCTOR GD100FFY120C5S IGBT modules
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GD100FFY120C6S STARPOWER SEMICONDUCTOR GD100FFY120C6S IGBT modules
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GD100HFU120C2S STARPOWER SEMICONDUCTOR GD100HFU120C2S IGBT modules
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GD100HFU120C8S STARPOWER SEMICONDUCTOR GD100HFU120C8S IGBT modules
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GD100HFX170C1S STARPOWER SEMICONDUCTOR GD100HFX170C1S IGBT modules
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GD100HFX65C1S STARPOWER SEMICONDUCTOR GD100HFX65C1S IGBT modules
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GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD100HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
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GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 100A
Produkt ist nicht verfügbar
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GD100HHU120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 100A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
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GD100PIX65C6S STARPOWER SEMICONDUCTOR GD100PIX65C6S IGBT modules
Produkt ist nicht verfügbar
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GD100PIY120C6SN STARPOWER SEMICONDUCTOR GD100PIY120C6SN IGBT modules
Produkt ist nicht verfügbar
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GD100SGY120D6S STARPOWER SEMICONDUCTOR GD100SGY120D6S IGBT modules
Produkt ist nicht verfügbar
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GD10PJX65F1S GD10PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
3+29.2 EUR
Mindestbestellmenge: 3
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GD10PJX65F1S GD10PJX65F1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
3+29.2 EUR
Mindestbestellmenge: 3
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GD10PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: L2.5
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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GD10PJX65L2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: L2.5
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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GD10PJY120F1S STARPOWER SEMICONDUCTOR GD10PJY120F1S IGBT modules
Produkt ist nicht verfügbar
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GD10PJY120F4S STARPOWER SEMICONDUCTOR GD10PJY120F4S IGBT modules
Produkt ist nicht verfügbar
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GD10PJY120L2S STARPOWER SEMICONDUCTOR GD10PJY120L2S IGBT modules
Produkt ist nicht verfügbar
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GD1200HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Produkt ist nicht verfügbar
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GD1200HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD1200SGX170C3SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Produkt ist nicht verfügbar
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GD1200SGX170C3SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
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GD1400HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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GD1400HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
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GD1400HFY120P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
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GD1400HFY120P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
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DG10X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1
DG10X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Case: TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
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DG10X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6484EB574C0D4&compId=DG10X06T1.pdf?ci_sign=e74a3e5fc8e59284f1848f0f7d33e99b8ccad0e1
DG10X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 19A; 196W; TO220
Case: TO220
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 30A
Turn-on time: 21ns
Turn-off time: 208ns
Type of transistor: IGBT
Power dissipation: 196W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 70nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.76 EUR
46+1.59 EUR
58+1.24 EUR
61+1.17 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
DG10X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
25+2.86 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DG10X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C646A0547600D4&compId=DG10X12T2.pdf?ci_sign=ecd5c06c4b9ccf4014b899a48a55efbdce6a038f
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Case: TO247
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 30A
Turn-on time: 37ns
Turn-off time: 493ns
Type of transistor: IGBT
Power dissipation: 96W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 80nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3 EUR
25+2.86 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DG120X07T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.68 EUR
8+10.1 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DG120X07T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C64524979DA0D4&compId=DG120X07T2.pdf?ci_sign=88e3bac2f6a70efad72a5d89b63c0abcb48a06c2
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Case: TO247PLUS
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Turn-on time: 282ns
Turn-off time: 334ns
Type of transistor: IGBT
Power dissipation: 893W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.86µC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.22 EUR
7+10.68 EUR
8+10.1 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DG15X06T1
Hersteller: STARPOWER SEMICONDUCTOR
DG15X06T1 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG15X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
22+3.26 EUR
23+3.1 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DG15X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63FD0921D40D4&compId=DG15X12T2.pdf?ci_sign=e5c8d43ca9deaa23c0fbb3b143eff915b977438a
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Collector current: 15A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.12µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 103ns
Turn-off time: 484ns
Type of transistor: IGBT
Power dissipation: 138W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 23 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.63 EUR
22+3.26 EUR
23+3.1 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10
DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T1 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C5FE2A345780D4&compId=DG20X06T1.pdf?ci_sign=1df36b345d12f89ec180eb3c430fe51bc200ac10
DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.65 EUR
29+2.46 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87
DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
DG20X06T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63DC60A6680D4&compId=DG20X06T2.pdf?ci_sign=38f8d52c3dd1cd8105ebebead0ea4a7fcd54aa87
DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.65 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
DG25X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.37 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG25X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C63B98B30BE0D4&compId=DG25X12T2.pdf?ci_sign=098cf3c95acc80f0e6870264e6d93ea9eef58270
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.19µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 36ns
Turn-off time: 362ns
Type of transistor: IGBT
Power dissipation: 348W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.56 EUR
20+3.58 EUR
22+3.37 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DG30X07T2
Hersteller: STARPOWER SEMICONDUCTOR
DG30X07T2 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG40X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.27µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 198ns
Turn-off time: 668ns
Type of transistor: IGBT
Power dissipation: 468W
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DG40X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C6378EB14100D4&compId=DG40X12T2.pdf?ci_sign=919da85bdc36ec01c9be7a305e356d60beea1c4d
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.27µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 198ns
Turn-off time: 668ns
Type of transistor: IGBT
Power dissipation: 468W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.59 EUR
13+5.93 EUR
16+4.65 EUR
17+4.39 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DG50Q12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG50Q12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB2C62EFFA990C0D4&compId=DG50Q12T2.pdf?ci_sign=b66a8abf62024bfe57e6791d6c2f069f0650b673
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.37µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 172ns
Turn-off time: 338ns
Type of transistor: IGBT
Power dissipation: 672W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.47 EUR
9+8.07 EUR
10+7.62 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG50X07T2
Hersteller: STARPOWER SEMICONDUCTOR
DG50X07T2 THT IGBT transistors
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.13 EUR
21+3.42 EUR
23+3.23 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DG50X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB18053FFAF7120D4&compId=DG50X12T2.pdf?ci_sign=7ad2ac27beed18285d8998085ecf9ffa3dc88c79
DG50X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.35µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.3 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG50X12T2 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB18053FFAF7120D4&compId=DG50X12T2.pdf?ci_sign=7ad2ac27beed18285d8998085ecf9ffa3dc88c79
DG50X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Collector current: 50A
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.35µC
Mounting: THT
Collector-emitter voltage: 1.2kV
Turn-on time: 180ns
Turn-off time: 607ns
Type of transistor: IGBT
Power dissipation: 592W
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.3 EUR
10+7.24 EUR
11+6.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Collector current: 75A
Mounting: THT
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+71.5 EUR
3+23.84 EUR
6+11.91 EUR
30+7.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DG75X07T2L
Hersteller: STARPOWER SEMICONDUCTOR
DG75X07T2L THT IGBT transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.04 EUR
12+6.03 EUR
13+5.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
DG75X12T2 THT IGBT transistors
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+14.17 EUR
8+8.94 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GD1000HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
GD1000HFX170P2S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100FFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFX170C6S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFX65C5S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFY120C5S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100FFY120C6S IGBT modules
Produkt ist nicht verfügbar
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GD100HFU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFU120C2S IGBT modules
Produkt ist nicht verfügbar
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GD100HFU120C8S
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFU120C8S IGBT modules
Produkt ist nicht verfügbar
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GD100HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFX170C1S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD100HFX65C1S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 100A
Produkt ist nicht verfügbar
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GD100HHU120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Case: C6 62mm
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: NPT Ultra Fast IGBT
Topology: H-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 100A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Type of semiconductor module: IGBT
Anzahl je Verpackung: 16 Stücke
Produkt ist nicht verfügbar
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GD100PIX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100PIX65C6S IGBT modules
Produkt ist nicht verfügbar
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GD100PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
GD100PIY120C6SN IGBT modules
Produkt ist nicht verfügbar
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GD100SGY120D6S
Hersteller: STARPOWER SEMICONDUCTOR
GD100SGY120D6S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJX65F1S
GD10PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+29.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJX65F1S
GD10PJX65F1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: F1.1
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 24 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+29.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: L2.5
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJX65L2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 10A
Case: L2.5
Type of semiconductor module: IGBT
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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GD10PJY120F1S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120F1S IGBT modules
Produkt ist nicht verfügbar
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GD10PJY120F4S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120F4S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD10PJY120L2S
Hersteller: STARPOWER SEMICONDUCTOR
GD10PJY120L2S IGBT modules
Produkt ist nicht verfügbar
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GD1200HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Produkt ist nicht verfügbar
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GD1200HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD1200SGX170C3SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD1200SGX170C3SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT x2; Urmax: 1700V; screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT x2
Max. off-state voltage: 1.7kV
Collector current: 1.2kA
Case: C3 130mm
Electrical mounting: screw
Technology: Trench FS IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 2.4kA
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD1400HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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GD1400HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.7kV
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD1400HFY120P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.2kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD1400HFY120P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1400A
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Case: P2.0
Max. off-state voltage: 1.2kV
Anzahl je Verpackung: 8 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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