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DG10X12T2 DG10X12T2 STARPOWER SEMICONDUCTOR DG10X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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DG120X07T2 DG120X07T2 STARPOWER SEMICONDUCTOR DG120X07T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.41 EUR
6+13 EUR
10+11.43 EUR
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DG15X12T2 DG15X12T2 STARPOWER SEMICONDUCTOR DG15X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
24+3.09 EUR
27+2.73 EUR
30+2.46 EUR
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DG20X06T1 DG20X06T1 STARPOWER SEMICONDUCTOR DG20X06T1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 50 Stücke:
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34+2.16 EUR
37+1.94 EUR
42+1.73 EUR
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DG20X06T2 DG20X06T2 STARPOWER SEMICONDUCTOR DG20X06T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 90 Stücke:
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30+2.4 EUR
34+2.16 EUR
38+1.92 EUR
42+1.73 EUR
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DG25X12T2 DG25X12T2 STARPOWER SEMICONDUCTOR DG25X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
auf Bestellung 66 Stücke:
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15+4.82 EUR
17+4.32 EUR
19+3.82 EUR
30+3.43 EUR
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DG40X12T2 DG40X12T2 STARPOWER SEMICONDUCTOR DG40X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
auf Bestellung 83 Stücke:
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12+6.23 EUR
13+5.62 EUR
15+4.96 EUR
30+4.46 EUR
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DG50Q12T2 DG50Q12T2 STARPOWER SEMICONDUCTOR DG50Q12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
auf Bestellung 26 Stücke:
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7+10.87 EUR
8+9.78 EUR
25+8.64 EUR
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DG50X12T2 DG50X12T2 STARPOWER SEMICONDUCTOR DG50X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 592W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 180ns
Turn-off time: 607ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.75 EUR
9+8.78 EUR
10+7.76 EUR
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DG75H12T2 DG75H12T2 STARPOWER SEMICONDUCTOR Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.23 EUR
8+10.1 EUR
10+8.92 EUR
30+8.02 EUR
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DG75X12T2 DG75X12T2 STARPOWER SEMICONDUCTOR DG75X12T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
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7+11.48 EUR
10+10.14 EUR
30+9.11 EUR
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GD1000HFX170P2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Case: P2.0
Semiconductor structure: transistor/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 1.7kV
Pulsed collector current: 2kA
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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GD100MLX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150FFX65C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 650V
Pulsed collector current: 300A
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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GD200TLQ120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD300HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Produkt ist nicht verfügbar
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GD35PJY120F2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Semiconductor structure: diode/transistor
Case: F2.0
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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GD450HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD450HTY120C7S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Produkt ist nicht verfügbar
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GD50FSY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PJX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD75FSY120L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD900HFY120P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD120HFR120C2S STARPOWER SEMICONDUCTOR md120hfr120c2s.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD200HFR120C2S STARPOWER SEMICONDUCTOR MD200HFR120C2S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD300HFR120B3S STARPOWER SEMICONDUCTOR MD300HFR120B3S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD300HFR120C2S STARPOWER SEMICONDUCTOR MD300HFR120C2S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MD30FSR120L2SF STARPOWER SEMICONDUCTOR MD30FSR120L2SF.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: L2
Topology: MOSFET three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 60mΩ
Pulsed drain current: 154A
Power dissipation: 203W
Technology: SiC
Gate-source voltage: -4...22V
Mechanical mounting: screw
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MD400HFR120C2S STARPOWER SEMICONDUCTOR MD400HFR120C2S.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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DG10X12T2 DG10X12T2.pdf
DG10X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 10A; 96W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 10A
Power dissipation: 96W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 37ns
Turn-off time: 493ns
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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DG120X07T2 DG120X07T2.pdf
DG120X07T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247PLUS
Kind of package: tube
Turn-on time: 282ns
Turn-off time: 334ns
Gate charge: 0.86µC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Power dissipation: 893W
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.41 EUR
6+13 EUR
10+11.43 EUR
Mindestbestellmenge: 5
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DG15X12T2 DG15X12T2.pdf
DG15X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 138W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 103ns
Turn-off time: 484ns
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
24+3.09 EUR
27+2.73 EUR
30+2.46 EUR
Mindestbestellmenge: 21
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DG20X06T1 DG20X06T1.pdf
DG20X06T1
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 313W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 313W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
37+1.94 EUR
42+1.73 EUR
Mindestbestellmenge: 34
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DG20X06T2 DG20X06T2.pdf
DG20X06T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 29A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 29A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 26ns
Turn-off time: 200ns
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
34+2.16 EUR
38+1.92 EUR
42+1.73 EUR
Mindestbestellmenge: 30
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DG25X12T2 DG25X12T2.pdf
DG25X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 25A; 348W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 348W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 36ns
Turn-off time: 362ns
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.82 EUR
17+4.32 EUR
19+3.82 EUR
30+3.43 EUR
Mindestbestellmenge: 15
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DG40X12T2 DG40X12T2.pdf
DG40X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 468W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 468W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 198ns
Turn-off time: 668ns
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
13+5.62 EUR
15+4.96 EUR
30+4.46 EUR
Mindestbestellmenge: 12
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DG50Q12T2 DG50Q12T2.pdf
DG50Q12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 672W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 172ns
Turn-off time: 338ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.87 EUR
8+9.78 EUR
25+8.64 EUR
Mindestbestellmenge: 7
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DG50X12T2 DG50X12T2.pdf
DG50X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 50A; 592W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 592W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 180ns
Turn-off time: 607ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.75 EUR
9+8.78 EUR
10+7.76 EUR
Mindestbestellmenge: 8
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DG75H12T2
DG75H12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Mounting: THT
Kind of package: tube
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.23 EUR
8+10.1 EUR
10+8.92 EUR
30+8.02 EUR
Mindestbestellmenge: 7
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DG75X12T2 DG75X12T2.pdf
DG75X12T2
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 75A; 852W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 852W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 0.49µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 163ns
Turn-off time: 559ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.76 EUR
7+11.48 EUR
10+10.14 EUR
30+9.11 EUR
Mindestbestellmenge: 6
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GD1000HFX170P2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 1000A
Case: P2.0
Semiconductor structure: transistor/transistor
Technology: Trench FS IGBT
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 1.7kV
Pulsed collector current: 2kA
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
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GD100MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Topology: NTC thermistor; three-level inverter; single-phase
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD150FFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 150A
Max. off-state voltage: 650V
Pulsed collector current: 300A
Case: C6 62mm
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
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GD200TLQ120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: L3
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 400A
Topology: 3-level inverter TNPC; NTC thermistor
Technology: Advanced Trench FS Fast IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD300HTY120C7S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Produkt ist nicht verfügbar
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GD35PJY120F2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Semiconductor structure: diode/transistor
Case: F2.0
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar
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GD450HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C6 62mm
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD450HTY120C7S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Mechanical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Case: C7
Electrical mounting: Press-in PCB; screw
Produkt ist nicht verfügbar
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GD50FSY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PJX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.0
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Trench FS IGBT
Electrical mounting: Press-in PCB
Produkt ist nicht verfügbar
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GD75FSY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 75A; L3.2
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: L3.2
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD900HFY120P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD120HFR120C2S md120hfr120c2s.pdf
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD200HFR120C2S MD200HFR120C2S.pdf
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD300HFR120B3S MD300HFR120B3S.pdf
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD300HFR120C2S MD300HFR120C2S.pdf
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD30FSR120L2SF MD30FSR120L2SF.pdf
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
Case: L2
Topology: MOSFET three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 60mΩ
Pulsed drain current: 154A
Power dissipation: 203W
Technology: SiC
Gate-source voltage: -4...22V
Mechanical mounting: screw
Produkt ist nicht verfügbar
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MD400HFR120C2S MD400HFR120C2S.pdf
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Gate-source voltage: -4...22V
Technology: SiC
On-state resistance: 5.8mΩ
Drain current: 400A
Pulsed drain current: 1.664kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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