Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160957) > Seite 1195 nach 2683
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| STWA12N120K5 | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Gate charge: 44.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA20N95DK5 | STMicroelectronics |
STWA20N95DK5 THT N channel transistors |
Produkt ist nicht verfügbar |
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| STWA20N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 11A; Idm: 70A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Pulsed drain current: 70A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA30N65DM6AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 112A Power dissipation: 284W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA32N65DM6AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 23A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 23A Pulsed drain current: 120A Power dissipation: 320W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Gate charge: 52.6nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA35N65DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA40N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 136A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 88mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA40N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 25A Pulsed drain current: 160A Power dissipation: 446W Case: TO247L Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| STWA40N95DK5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 24A Pulsed drain current: 152A Power dissipation: 450W Case: TO247 Gate-source voltage: ±30V On-state resistance: 120mΩ Mounting: THT Gate charge: 100nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| STWA40N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 24A; Idm: 152A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 24A Pulsed drain current: 152A Power dissipation: 450W Case: TO247 Gate-source voltage: ±30V On-state resistance: 110mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| STWA45N60DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Case: TO247 On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA45N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Pulsed drain current: 140A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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STWA48N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 25A; Idm: 160A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA48N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA48N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 140A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 69mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA50N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 110A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA57N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA60N043DM9 | STMicroelectronics |
STWA60N043DM9 THT N channel transistors |
Produkt ist nicht verfügbar |
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STWA63N65DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247 Kind of package: tube Mounting: THT Drain-source voltage: 650V Drain current: 60A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA65N023M9 | STMicroelectronics | STWA65N023M9 THT N channel transistors |
Produkt ist nicht verfügbar |
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STWA65N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 24A; Idm: 140A Kind of package: tube Mounting: THT Drain-source voltage: 600V Drain current: 24A On-state resistance: 71mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 54nC Technology: MDmesh™ DM6 Kind of channel: enhanced Pulsed drain current: 140A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA65N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A Kind of package: tube Application: automotive industry Mounting: THT Drain-source voltage: 650V Drain current: 38A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Gate charge: 0.12µC Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 240A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA67N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 37A; Idm: 190A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Pulsed drain current: 190A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 72.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA67N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Pulsed drain current: 200A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 72.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA68N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 40A; Idm: 252A Kind of package: tube Mounting: THT Drain-source voltage: 600V Drain current: 40A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Gate charge: 106nC Technology: MDmesh™ M6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 252A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA68N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Kind of package: tube Mounting: THT Drain-source voltage: 650V Drain current: 35A On-state resistance: 51mΩ Type of transistor: N-MOSFET Power dissipation: 431W Polarisation: unipolar Gate charge: 80nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 172A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA68N65DM6AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 46A; Idm: 280A Kind of package: tube Application: automotive industry Mounting: THT Drain-source voltage: 650V Drain current: 46A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 118nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 280A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA70N60DM2 | STMicroelectronics |
STWA70N60DM2 THT N channel transistors |
Produkt ist nicht verfügbar |
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| STWA70N60DM6 | STMicroelectronics |
STWA70N60DM6 THT N channel transistors |
Produkt ist nicht verfügbar |
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STWA70N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 43A Pulsed drain current: 260A Power dissipation: 450W Case: TO247 Gate-source voltage: ±25V On-state resistance: 40mΩ Mounting: THT Gate charge: 125nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA72N60DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Pulsed drain current: 220A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA75N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA75N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 280A Power dissipation: 480W Case: TO247-3 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 118nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWA88N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 710V; 50.5A; Idm: 336A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 710V Drain current: 50.5A Pulsed drain current: 336A Power dissipation: 450W Case: TO247 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STWD100NPWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| STWD100NWWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| STWD100NXWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STWD100NYWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5 Supply voltage: 2.7...5.5V DC Operating temperature: -40...85°C Kind of RESET output: open drain Integrated circuit features: watchdog Kind of integrated circuit: timer Active logical level: low Mounting: SMD Case: SOT23-5 DC supply current: 13µA Type of integrated circuit: peripheral circuit Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16610 Stücke: Lieferzeit 7-14 Tag (e) |
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| STWD100PYW83F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SC70-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| STWD100YNPWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| STWD100YNWWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| STWD100YNXWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| STWD100YNYWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: timer Kind of RESET output: open drain; push-pull Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Mounting: SMD Integrated circuit features: watchdog Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STY112N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 61A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±25V On-state resistance: 22mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STY139N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 78A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STY145N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Power dissipation: 625W Polarisation: unipolar Technology: MDmesh™ V Features of semiconductor devices: ESD protected gate Drain current: 87A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: MAX247 On-state resistance: 15mΩ Gate-source voltage: ±25V Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STY50N105DK5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W Drain-source voltage: 1.05kV Drain current: 46A On-state resistance: 0.12Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of package: tube Technology: SuperMESH5™ Kind of channel: enhanced Gate-source voltage: ±30V Power dissipation: 625W Mounting: THT Case: MAX247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STY60NK30Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 37.5A Power dissipation: 450W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STY60NM50 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 37.8A Power dissipation: 560W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| STY60NM60 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247 Kind of package: tube Pulsed drain current: 60A Power dissipation: 460W Polarisation: unipolar Technology: MDmesh™ Features of semiconductor devices: ESD protected gate Drain current: 37.8A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Case: MAX247 On-state resistance: 55mΩ Gate-source voltage: ±30V Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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T1010H-6G | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Mounting: SMD Kind of package: tube Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.6kV Max. load current: 10A Gate current: 10mA Features of semiconductor devices: high temperature Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| T1010H-6G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.6kV Max. load current: 10A Gate current: 10mA Features of semiconductor devices: high temperature Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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T1050H-6G | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 10A; D2PAK; Igt: 50mA; high temperature Mounting: SMD Case: D2PAK Kind of package: tube Max. load current: 10A Max. off-state voltage: 0.6kV Features of semiconductor devices: high temperature Type of thyristor: triac Gate current: 50mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| T1205-600G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 120A Kind of package: reel; tape Mounting: SMD Max. load current: 12A Max. off-state voltage: 0.6kV Case: D2PAK Type of thyristor: triac Max. forward impulse current: 120A Gate current: 5mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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T1210-800G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 12A; D2PAK; Igt: 10mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 10mA Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 489 Stücke: Lieferzeit 7-14 Tag (e) |
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T1235-600G | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Technology: Snubberless™ Mounting: SMD Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 69 Stücke: Lieferzeit 7-14 Tag (e) |
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T1235-600G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 496 Stücke: Lieferzeit 7-14 Tag (e) |
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T1235-800G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 12A; D2PAK; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 12A Case: D2PAK Gate current: 35mA Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1078 Stücke: Lieferzeit 7-14 Tag (e) |
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T1235H-6G | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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T1235H-6G-TR | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 12A Case: D2PAK Gate current: 35mA Features of semiconductor devices: high temperature Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 974 Stücke: Lieferzeit 7-14 Tag (e) |
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| STWA12N120K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Gate charge: 44.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Gate charge: 44.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA20N95DK5 |
|
Hersteller: STMicroelectronics
STWA20N95DK5 THT N channel transistors
STWA20N95DK5 THT N channel transistors
Produkt ist nicht verfügbar
| STWA20N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 11A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 70A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 11A; Idm: 70A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 11A
Pulsed drain current: 70A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 275mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA30N65DM6AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 284W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 284W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA32N65DM6AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 23A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 320W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 52.6nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 23A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 320W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 52.6nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA35N65DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 20A; Idm: 90A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 90A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA40N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 88mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA40N90K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 446W
Case: TO247L
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 446W
Case: TO247L
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| STWA40N95DK5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 24A
Pulsed drain current: 152A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 120mΩ
Mounting: THT
Gate charge: 100nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 24A
Pulsed drain current: 152A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 120mΩ
Mounting: THT
Gate charge: 100nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STWA40N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 24A; Idm: 152A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 24A
Pulsed drain current: 152A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 110mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 24A; Idm: 152A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 24A
Pulsed drain current: 152A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 110mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STWA45N60DM2AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA45N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 22A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Pulsed drain current: 140A
Power dissipation: 210W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| STWA48N60DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 25A; Idm: 160A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 25A; Idm: 160A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA48N60M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA48N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA50N65DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 110A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 110A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA57N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA60N043DM9 |
|
Hersteller: STMicroelectronics
STWA60N043DM9 THT N channel transistors
STWA60N043DM9 THT N channel transistors
Produkt ist nicht verfügbar
| STWA63N65DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Kind of package: tube
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247
Kind of package: tube
Mounting: THT
Drain-source voltage: 650V
Drain current: 60A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA65N023M9 |
Hersteller: STMicroelectronics
STWA65N023M9 THT N channel transistors
STWA65N023M9 THT N channel transistors
Produkt ist nicht verfügbar
| STWA65N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 24A; Idm: 140A
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 24A
On-state resistance: 71mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 54nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Pulsed drain current: 140A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 24A; Idm: 140A
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 24A
On-state resistance: 71mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 54nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Pulsed drain current: 140A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA65N65DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Kind of package: tube
Application: automotive industry
Mounting: THT
Drain-source voltage: 650V
Drain current: 38A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 240A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A
Kind of package: tube
Application: automotive industry
Mounting: THT
Drain-source voltage: 650V
Drain current: 38A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 240A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA67N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 37A; Idm: 190A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Pulsed drain current: 190A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 37A; Idm: 190A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Pulsed drain current: 190A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA67N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 33A; Idm: 200A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Pulsed drain current: 200A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 72.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA68N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 40A; Idm: 252A
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 40A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 106nC
Technology: MDmesh™ M6
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 252A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 40A; Idm: 252A
Kind of package: tube
Mounting: THT
Drain-source voltage: 600V
Drain current: 40A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 106nC
Technology: MDmesh™ M6
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 252A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA68N65DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Kind of package: tube
Mounting: THT
Drain-source voltage: 650V
Drain current: 35A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 431W
Polarisation: unipolar
Gate charge: 80nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 172A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Kind of package: tube
Mounting: THT
Drain-source voltage: 650V
Drain current: 35A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET
Power dissipation: 431W
Polarisation: unipolar
Gate charge: 80nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 172A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA68N65DM6AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 46A; Idm: 280A
Kind of package: tube
Application: automotive industry
Mounting: THT
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 118nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 280A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 46A; Idm: 280A
Kind of package: tube
Application: automotive industry
Mounting: THT
Drain-source voltage: 650V
Drain current: 46A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 118nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: 280A
Case: TO247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA70N60DM2 |
|
Hersteller: STMicroelectronics
STWA70N60DM2 THT N channel transistors
STWA70N60DM2 THT N channel transistors
Produkt ist nicht verfügbar
| STWA70N60DM6 |
|
Hersteller: STMicroelectronics
STWA70N60DM6 THT N channel transistors
STWA70N60DM6 THT N channel transistors
Produkt ist nicht verfügbar
| STWA70N65DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43A
Pulsed drain current: 260A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43A
Pulsed drain current: 260A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA72N60DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 220A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Pulsed drain current: 220A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA75N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA75N65DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWA88N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 710V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 710V; 50.5A; Idm: 336A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STWD100NPWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100NWWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100NXWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100NYWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Kind of RESET output: open drain
Integrated circuit features: watchdog
Kind of integrated circuit: timer
Active logical level: low
Mounting: SMD
Case: SOT23-5
DC supply current: 13µA
Type of integrated circuit: peripheral circuit
Anzahl je Verpackung: 1 Stücke
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Supply voltage: 2.7...5.5V DC
Operating temperature: -40...85°C
Kind of RESET output: open drain
Integrated circuit features: watchdog
Kind of integrated circuit: timer
Active logical level: low
Mounting: SMD
Case: SOT23-5
DC supply current: 13µA
Type of integrated circuit: peripheral circuit
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16610 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.87 EUR |
| 44+ | 1.64 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| STWD100PYW83F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100YNPWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100YNWWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100YNXWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STWD100YNYWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; timer; open drain,push-pull
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Integrated circuit features: watchdog
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| STY112N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 61A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 61A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STY139N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 78A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 78A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 78A
Power dissipation: 625W
Case: MAX247
Gate-source voltage: ±25V
On-state resistance: 17mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STY145N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Power dissipation: 625W
Polarisation: unipolar
Technology: MDmesh™ V
Features of semiconductor devices: ESD protected gate
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: MAX247
On-state resistance: 15mΩ
Gate-source voltage: ±25V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Power dissipation: 625W
Polarisation: unipolar
Technology: MDmesh™ V
Features of semiconductor devices: ESD protected gate
Drain current: 87A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Kind of package: tube
Case: MAX247
On-state resistance: 15mΩ
Gate-source voltage: ±25V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STY50N105DK5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W
Drain-source voltage: 1.05kV
Drain current: 46A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Technology: SuperMESH5™
Kind of channel: enhanced
Gate-source voltage: ±30V
Power dissipation: 625W
Mounting: THT
Case: MAX247
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W
Drain-source voltage: 1.05kV
Drain current: 46A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: tube
Technology: SuperMESH5™
Kind of channel: enhanced
Gate-source voltage: ±30V
Power dissipation: 625W
Mounting: THT
Case: MAX247
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STY60NK30Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| STY60NM50 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37.8A
Power dissipation: 560W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37.8A
Power dissipation: 560W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 22.88 EUR |
| 5+ | 15.6 EUR |
| STY60NM60 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247
Kind of package: tube
Pulsed drain current: 60A
Power dissipation: 460W
Polarisation: unipolar
Technology: MDmesh™
Features of semiconductor devices: ESD protected gate
Drain current: 37.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Case: MAX247
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247
Kind of package: tube
Pulsed drain current: 60A
Power dissipation: 460W
Polarisation: unipolar
Technology: MDmesh™
Features of semiconductor devices: ESD protected gate
Drain current: 37.8A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Case: MAX247
On-state resistance: 55mΩ
Gate-source voltage: ±30V
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| T1010H-6G |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 10mA
Features of semiconductor devices: high temperature
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 10mA
Features of semiconductor devices: high temperature
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| T1010H-6G-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 10mA
Features of semiconductor devices: high temperature
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 10mA; high temperature
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 10A
Gate current: 10mA
Features of semiconductor devices: high temperature
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| T1050H-6G |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 50mA; high temperature
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Type of thyristor: triac
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 10A; D2PAK; Igt: 50mA; high temperature
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. load current: 10A
Max. off-state voltage: 0.6kV
Features of semiconductor devices: high temperature
Type of thyristor: triac
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| T1205-600G-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 120A
Kind of package: reel; tape
Mounting: SMD
Max. load current: 12A
Max. off-state voltage: 0.6kV
Case: D2PAK
Type of thyristor: triac
Max. forward impulse current: 120A
Gate current: 5mA
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 5mA; Ifsm: 120A
Kind of package: reel; tape
Mounting: SMD
Max. load current: 12A
Max. off-state voltage: 0.6kV
Case: D2PAK
Type of thyristor: triac
Max. forward impulse current: 120A
Gate current: 5mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| T1210-800G-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 10mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 10mA
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 489 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 64+ | 1.13 EUR |
| 87+ | 0.83 EUR |
| 92+ | 0.78 EUR |
| T1235-600G |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Technology: Snubberless™
Mounting: SMD
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Technology: Snubberless™
Mounting: SMD
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 57+ | 1.27 EUR |
| 66+ | 1.09 EUR |
| 69+ | 1.03 EUR |
| 250+ | 0.75 EUR |
| T1235-600G-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 496 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| 72+ | 1 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 250+ | 0.74 EUR |
| T1235-800G-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 800V; 12A; D2PAK; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1078 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 65+ | 1.1 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| T1235H-6G |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.7 EUR |
| 47+ | 1.53 EUR |
| 53+ | 1.36 EUR |
| 59+ | 1.23 EUR |
| 62+ | 1.16 EUR |
| 250+ | 1.14 EUR |
| T1235H-6G-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Triacs
Description: Triac; 600V; 12A; D2PAK; Igt: 35mA; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 12A
Case: D2PAK
Gate current: 35mA
Features of semiconductor devices: high temperature
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 974 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.64 EUR |
| 49+ | 1.49 EUR |
| 58+ | 1.24 EUR |
| 62+ | 1.17 EUR |
| 250+ | 1.13 EUR |