Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160945) > Seite 1194 nach 2683
Foto | Bezeichnung | Hersteller | Beschreibung |
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STW48NM60N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 42 Stücke: Lieferzeit 7-14 Tag (e) |
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STW4N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247 Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO247 Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 160W Technology: PowerMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 182 Stücke: Lieferzeit 7-14 Tag (e) |
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STW50N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW50N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Pulsed drain current: 120A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 91mΩ Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW52NK25Z | STMicroelectronics | STW52NK25Z THT N channel transistors |
Produkt ist nicht verfügbar |
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STW56N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW56N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 208A Power dissipation: 350W Case: TO247 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW56N60M2-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 208A Power dissipation: 350W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW56N65DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW56N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW56N65M2-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW57N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 56mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 56mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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STW58N60DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 200A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 52mΩ Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW58N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 150A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW5NK100Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W Mounting: THT Case: TO247 Drain-source voltage: 1kV Drain current: 2.2A On-state resistance: 3.7Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Technology: SuperMESH3™ Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW63N65DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW65N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 140A Power dissipation: 368W Case: TO247 Gate-source voltage: ±25V On-state resistance: 71mΩ Mounting: THT Gate charge: 65.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW65N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW65N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 30A Pulsed drain current: 184A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW68N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 252A Power dissipation: 390W Case: TO247 Gate-source voltage: ±25V On-state resistance: 41mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 600 Stücke |
Produkt ist nicht verfügbar |
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STW68N60M6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 252A Power dissipation: 390W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW68N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 172A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 59mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW68N65DM6-4AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; Idm: 280A; 480W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Pulsed drain current: 280A Power dissipation: 480W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 33mΩ Mounting: THT Gate charge: 118nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW69N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 36.5A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 36.5A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STW69N65M5-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 36.5A Pulsed drain current: 232A Power dissipation: 330W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: THT Gate charge: 143nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW6N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Pulsed drain current: 24A Power dissipation: 110W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW6N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 6A; Idm: 24A; 90W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Pulsed drain current: 24A Power dissipation: 90W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 13nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247 Mounting: THT Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Drain-source voltage: 600V Drain current: 42A On-state resistance: 37mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247 Mounting: THT Gate charge: 99nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N60DM6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Mounting: THT Gate charge: 99nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STW70N60M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W Mounting: THT Technology: MDmesh™ || Plus Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Drain-source voltage: 650V Drain current: 43A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 450W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N60M2-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A Mounting: THT Gate charge: 118nC Technology: MDmesh™ M2 Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 272A Drain-source voltage: 600V Drain current: 43A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 450W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A Mounting: THT Gate charge: 125nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 260A Drain-source voltage: 650V Drain current: 43A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 450W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N65DM6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4 Mounting: THT Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 260A Drain-source voltage: 650V Drain current: 43A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 450W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW70N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247 Mounting: THT Gate charge: 117nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Pulsed drain current: 252A Drain-source voltage: 650V Drain current: 40A On-state resistance: 39mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW74NF30 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 37.8A; Idm: 240A; 320W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 37.8A Pulsed drain current: 240A Power dissipation: 320W Case: TO247 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW75N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW75N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW75N60M6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW75N65DM6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 280A Power dissipation: 480W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 118nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW75NF20 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247 Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 47A Power dissipation: 190W Case: TO247 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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STW75NF30AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 60A Case: TO247 On-state resistance: 45mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW77N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 41.5A Power dissipation: 400W Case: TO247 Gate-source voltage: ±25V On-state resistance: 33mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW78N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 450W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 41.5A Power dissipation: 450W Case: TO247 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW7N105K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 16A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3A Pulsed drain current: 16A Power dissipation: 110W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW7N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; Idm: 28A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Pulsed drain current: 28A Power dissipation: 110W Case: TO247 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW7N95K3 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 4.5A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW7NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO247 Mounting: THT Case: TO247 Kind of package: tube Polarisation: unipolar Kind of channel: enhanced Technology: SuperMesh™ Power dissipation: 140W Gate-source voltage: ±30V Type of transistor: N-MOSFET Drain-source voltage: 900V Drain current: 3.65A On-state resistance: 2000mΩ |
Produkt ist nicht verfügbar |
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STW88N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 50.5A; 450W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.5A Power dissipation: 450W Case: TO247 Gate-source voltage: ±25V On-state resistance: 29mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW88N65M5-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 50.5A; Idm: 336A; 450W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.5A Pulsed drain current: 336A Power dissipation: 450W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW8N120K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 12A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.65Ω Mounting: THT Gate charge: 13.7nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW8N90K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 32A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Pulsed drain current: 32A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW8NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247 Mounting: THT Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Kind of package: tube Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247 Drain-source voltage: 800V Drain current: 3.9A On-state resistance: 1.5Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW9N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247 Mounting: THT Power dissipation: 320W Polarisation: unipolar Technology: PowerMesh™ Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.5kV Type of transistor: N-MOSFET Kind of package: tube Case: TO247 On-state resistance: 2.5Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW9N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.4A Pulsed drain current: 28A Power dissipation: 110W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW9NK95Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 4.41A Pulsed drain current: 28A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.15Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA12N120K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Gate charge: 44.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA20N95DK5 | STMicroelectronics | STWA20N95DK5 THT N channel transistors |
Produkt ist nicht verfügbar |
STW48NM60N |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.37 EUR |
12+ | 6.13 EUR |
13+ | 5.81 EUR |
STW4N150 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 182 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.24 EUR |
12+ | 6.05 EUR |
STW50N65DM2AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW50N65DM6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 120A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 120A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW52NK25Z |
Hersteller: STMicroelectronics
STW52NK25Z THT N channel transistors
STW52NK25Z THT N channel transistors
Produkt ist nicht verfügbar
STW56N60DM2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N60M2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N60M2-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65DM2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65M2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65M2-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW57N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW57N65M5-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.06 EUR |
10+ | 14.49 EUR |
STW58N60DM2AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW58N65DM2AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW5NK100Z |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W
Mounting: THT
Case: TO247
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W
Mounting: THT
Case: TO247
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW63N65DM2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N60DM6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N65DM2AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N80K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 30A
Pulsed drain current: 184A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 30A
Pulsed drain current: 184A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N60M6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 600 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
STW68N60M6-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N65DM6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N65DM6-4AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; Idm: 280A; 480W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; Idm: 280A; 480W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW69N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 36.5A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36.5A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 36.5A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36.5A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 17.12 EUR |
6+ | 12.4 EUR |
STW69N65M5-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 36.5A
Pulsed drain current: 232A
Power dissipation: 330W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 36.5A
Pulsed drain current: 232A
Power dissipation: 330W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW6N90K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW6N95K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 6A; Idm: 24A; 90W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 6A; Idm: 24A; 90W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Mounting: THT
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Mounting: THT
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM6-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 17.12 EUR |
7+ | 11.15 EUR |
STW70N60M2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Mounting: THT
Technology: MDmesh™ || Plus
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Mounting: THT
Technology: MDmesh™ || Plus
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60M2-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Mounting: THT
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Mounting: THT
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65DM6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Mounting: THT
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Mounting: THT
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65DM6-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Mounting: THT
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Mounting: THT
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65M2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Mounting: THT
Gate charge: 117nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Mounting: THT
Gate charge: 117nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW74NF30 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.8A; Idm: 240A; 320W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.8A
Pulsed drain current: 240A
Power dissipation: 320W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.8A; Idm: 240A; 320W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.8A
Pulsed drain current: 240A
Power dissipation: 320W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60DM6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60M6 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60M6-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N65DM6-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75NF20 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.28 EUR |
13+ | 5.65 EUR |
17+ | 4.33 EUR |
18+ | 4.1 EUR |
STW75NF30AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 60A
Case: TO247
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 60A
Case: TO247
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW77N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 400W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 400W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW78N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N105K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 16A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 16A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 16A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 16A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N90K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; Idm: 28A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; Idm: 28A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N95K3 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.5A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.5A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7NK90Z |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Technology: SuperMesh™
Power dissipation: 140W
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 3.65A
On-state resistance: 2000mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Technology: SuperMesh™
Power dissipation: 140W
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 3.65A
On-state resistance: 2000mΩ
Produkt ist nicht verfügbar
STW88N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 50.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 50.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW88N65M5-4 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.5A; Idm: 336A; 450W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.5A; Idm: 336A; 450W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8N120K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 12A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.65Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 12A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.65Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8N90K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8NK80Z |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9N150 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247
Mounting: THT
Power dissipation: 320W
Polarisation: unipolar
Technology: PowerMesh™
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247
On-state resistance: 2.5Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247
Mounting: THT
Power dissipation: 320W
Polarisation: unipolar
Technology: PowerMesh™
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247
On-state resistance: 2.5Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9N80K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9NK90Z |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9NK95Z |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.41A
Pulsed drain current: 28A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.41A
Pulsed drain current: 28A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA12N120K5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Gate charge: 44.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Gate charge: 44.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA20N95DK5 |
Hersteller: STMicroelectronics
STWA20N95DK5 THT N channel transistors
STWA20N95DK5 THT N channel transistors
Produkt ist nicht verfügbar