Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160945) > Seite 1194 nach 2683

Wählen Sie Seite:    << Vorherige Seite ]  1 268 536 804 1072 1189 1190 1191 1192 1193 1194 1195 1196 1197 1198 1199 1340 1608 1876 2144 2412 2680 2683  Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
STW48NM60N STW48NM60N STMicroelectronics STW48NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.37 EUR
12+ 6.13 EUR
13+ 5.81 EUR
Mindestbestellmenge: 8
STW4N150 STW4N150 STMicroelectronics STP4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 160W
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 182 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.24 EUR
12+ 6.05 EUR
Mindestbestellmenge: 8
STW50N65DM2AG STW50N65DM2AG STMicroelectronics STW50N65DM2AG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW50N65DM6 STMicroelectronics stw50n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 120A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW52NK25Z STMicroelectronics en.CD00045633.pdf STW52NK25Z THT N channel transistors
Produkt ist nicht verfügbar
STW56N60DM2 STW56N60DM2 STMicroelectronics STW56N60DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N60M2 STMicroelectronics stw56n60m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N60M2-4 STMicroelectronics stw56n60m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65DM2 STW56N65DM2 STMicroelectronics STW56N65DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65M2 STMicroelectronics stw56n65m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65M2-4 STMicroelectronics stw56n65m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW57N65M5 STMicroelectronics stw57n65m5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW57N65M5-4 STW57N65M5-4 STMicroelectronics STW57N65M5-4-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.06 EUR
10+ 14.49 EUR
Mindestbestellmenge: 5
STW58N60DM2AG STMicroelectronics stw58n60dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW58N65DM2AG STMicroelectronics stw58n65dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW5NK100Z STW5NK100Z STMicroelectronics stp5nk100z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W
Mounting: THT
Case: TO247
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW63N65DM2 STMicroelectronics stw63n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N60DM6 STMicroelectronics stw65n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N65DM2AG STMicroelectronics stw65n65dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N80K5 STMicroelectronics stw65n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 30A
Pulsed drain current: 184A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N60M6 STW68N60M6 STMicroelectronics stw68n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
STW68N60M6-4 STMicroelectronics stw68n60m6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N65DM6 STMicroelectronics stw68n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N65DM6-4AG STMicroelectronics stw68n65dm6-4ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; Idm: 280A; 480W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW69N65M5 STW69N65M5 STMicroelectronics STx69N65M5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 36.5A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36.5A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
5+17.12 EUR
6+ 12.4 EUR
Mindestbestellmenge: 5
STW69N65M5-4 STMicroelectronics stw69n65m5-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 36.5A
Pulsed drain current: 232A
Power dissipation: 330W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW6N90K5 STW6N90K5 STMicroelectronics stw6n90k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW6N95K5 STMicroelectronics stw6n95k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 6A; Idm: 24A; 90W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM2 STW70N60DM2 STMicroelectronics STW70N60DM2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Mounting: THT
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM6 STMicroelectronics stw70n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM6-4 STW70N60DM6-4 STMicroelectronics stw70n60dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
5+17.12 EUR
7+ 11.15 EUR
Mindestbestellmenge: 5
STW70N60M2 STW70N60M2 STMicroelectronics STW70N60M2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Mounting: THT
Technology: MDmesh™ || Plus
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60M2-4 STMicroelectronics stw70n60m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Mounting: THT
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65DM6 STMicroelectronics stw70n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Mounting: THT
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65DM6-4 STMicroelectronics stw70n65dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Mounting: THT
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65M2 STMicroelectronics stw70n65m2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Mounting: THT
Gate charge: 117nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW74NF30 STMicroelectronics stw74nf30.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.8A; Idm: 240A; 320W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.8A
Pulsed drain current: 240A
Power dissipation: 320W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60DM6 STMicroelectronics stw75n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60M6 STW75N60M6 STMicroelectronics stw75n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60M6-4 STMicroelectronics stw75n60m6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N65DM6-4 STMicroelectronics stw75n65dm6-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75NF20 STW75NF20 STMicroelectronics STx75NF20-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.28 EUR
13+ 5.65 EUR
17+ 4.33 EUR
18+ 4.1 EUR
Mindestbestellmenge: 12
STW75NF30AG STMicroelectronics Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 60A
Case: TO247
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW77N65M5 STW77N65M5 STMicroelectronics STW77N65M5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 400W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW78N65M5 STW78N65M5 STMicroelectronics STW78N65M5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N105K5 STMicroelectronics stw7n105k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 16A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 16A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N90K5 STMicroelectronics stw7n90k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; Idm: 28A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N95K3 STW7N95K3 STMicroelectronics STP7N95K3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.5A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7NK90Z STW7NK90Z STMicroelectronics en.CD00003175.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Technology: SuperMesh™
Power dissipation: 140W
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 3.65A
On-state resistance: 2000mΩ
Produkt ist nicht verfügbar
STW88N65M5 STW88N65M5 STMicroelectronics STW88N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 50.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW88N65M5-4 STMicroelectronics stw88n65m5-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.5A; Idm: 336A; 450W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8N120K5 STMicroelectronics stw8n120k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 12A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.65Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8N90K5 STMicroelectronics stw8n90k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8NK80Z STW8NK80Z STMicroelectronics STP8NK80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9N150 STW9N150 STMicroelectronics STW9N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247
Mounting: THT
Power dissipation: 320W
Polarisation: unipolar
Technology: PowerMesh™
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247
On-state resistance: 2.5Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9N80K5 STMicroelectronics stw9n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9NK90Z STW9NK90Z STMicroelectronics STF9NK90Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9NK95Z STMicroelectronics en.CD00173854.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.41A
Pulsed drain current: 28A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA12N120K5 STMicroelectronics stwa12n120k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Gate charge: 44.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA20N95DK5 STMicroelectronics stwa20n95dk5.pdf STWA20N95DK5 THT N channel transistors
Produkt ist nicht verfügbar
STW48NM60N STW48NM60N-DTE.pdf
STW48NM60N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.37 EUR
12+ 6.13 EUR
13+ 5.81 EUR
Mindestbestellmenge: 8
STW4N150 STP4N150.pdf
STW4N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 160W
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 182 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
8+9.24 EUR
12+ 6.05 EUR
Mindestbestellmenge: 8
STW50N65DM2AG STW50N65DM2AG-DTE.pdf
STW50N65DM2AG
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW50N65DM6 stw50n65dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 120A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 91mΩ
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW52NK25Z en.CD00045633.pdf
Hersteller: STMicroelectronics
STW52NK25Z THT N channel transistors
Produkt ist nicht verfügbar
STW56N60DM2 STW56N60DM2-DTE.pdf
STW56N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 31A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N60M2 stw56n60m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N60M2-4 stw56n60m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 208A; 350W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 208A
Power dissipation: 350W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65DM2 STW56N65DM2-DTE.pdf
STW56N65DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65M2 stw56n65m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW56N65M2-4 stw56n65m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW57N65M5 stw57n65m5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 26.5A; Idm: 168A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW57N65M5-4 STW57N65M5-4-DTE.pdf
STW57N65M5-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.06 EUR
10+ 14.49 EUR
Mindestbestellmenge: 5
STW58N60DM2AG stw58n60dm2ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; Idm: 200A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 200A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW58N65DM2AG stw58n65dm2ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW5NK100Z description stp5nk100z.pdf
STW5NK100Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 1000V; 2.2A; 125W
Mounting: THT
Case: TO247
Drain-source voltage: 1kV
Drain current: 2.2A
On-state resistance: 3.7Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMESH3™
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW63N65DM2 stw63n65dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N60DM6 stw65n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Power dissipation: 368W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N65DM2AG stw65n65dm2ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW65N80K5 stw65n80k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 30A; Idm: 184A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 30A
Pulsed drain current: 184A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N60M6 stw68n60m6.pdf
STW68N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 600 Stücke
Produkt ist nicht verfügbar
STW68N60M6-4 stw68n60m6-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N65DM6 stw68n65dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 172A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW68N65DM6-4AG stw68n65dm6-4ag.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; Idm: 280A; 480W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW69N65M5 STx69N65M5-DTE.pdf
STW69N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 36.5A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36.5A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+17.12 EUR
6+ 12.4 EUR
Mindestbestellmenge: 5
STW69N65M5-4 stw69n65m5-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 36.5A; Idm: 232A; 330W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 36.5A
Pulsed drain current: 232A
Power dissipation: 330W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW6N90K5 stw6n90k5.pdf
STW6N90K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 4A; Idm: 24A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 24A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW6N95K5 stw6n95k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 6A; Idm: 24A; 90W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM2 STW70N60DM2-DTE.pdf
STW70N60DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; 446W; TO247
Mounting: THT
Technology: MDmesh™ DM2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 600V
Drain current: 42A
On-state resistance: 37mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM6 stw70n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60DM6-4 stw70n60dm6-4.pdf
STW70N60DM6-4
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+17.12 EUR
7+ 11.15 EUR
Mindestbestellmenge: 5
STW70N60M2 STW70N60M2.pdf
STW70N60M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 650V; 43A; 450W
Mounting: THT
Technology: MDmesh™ || Plus
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N60M2-4 stw70n60m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 43A; Idm: 272A
Mounting: THT
Gate charge: 118nC
Technology: MDmesh™ M2
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 272A
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65DM6 stw70n65dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Mounting: THT
Gate charge: 125nC
Technology: MDmesh™ DM6
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65DM6-4 stw70n65dm6-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43A; Idm: 260A; 450W; TO247-4
Mounting: THT
Gate charge: 125nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 260A
Drain-source voltage: 650V
Drain current: 43A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 450W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW70N65M2 stw70n65m2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 252A; 446W; TO247
Mounting: THT
Gate charge: 117nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247
Pulsed drain current: 252A
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Power dissipation: 446W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW74NF30 stw74nf30.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.8A; Idm: 240A; 320W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.8A
Pulsed drain current: 240A
Power dissipation: 320W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60DM6 stw75n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60M6 stw75n60m6.pdf
STW75N60M6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N60M6-4 stw75n60m6-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 288A; 446W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 288A
Power dissipation: 446W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75N65DM6-4 stw75n65dm6-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 280A
Power dissipation: 480W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW75NF20 STx75NF20-DTE.pdf
STW75NF20
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.28 EUR
13+ 5.65 EUR
17+ 4.33 EUR
18+ 4.1 EUR
Mindestbestellmenge: 12
STW75NF30AG
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 60A
Case: TO247
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW77N65M5 STW77N65M5-DTE.pdf
STW77N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 400W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 400W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 33mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW78N65M5 STW78N65M5-DTE.pdf
STW78N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 41.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 41.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N105K5 stw7n105k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3A; Idm: 16A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.05kV
Drain current: 3A
Pulsed drain current: 16A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N90K5 stw7n90k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; Idm: 28A; 110W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7N95K3 STP7N95K3.pdf
STW7N95K3
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.5A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW7NK90Z en.CD00003175.pdf
STW7NK90Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.65A; 140W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhanced
Technology: SuperMesh™
Power dissipation: 140W
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 3.65A
On-state resistance: 2000mΩ
Produkt ist nicht verfügbar
STW88N65M5 STW88N65M5.pdf
STW88N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 50.5A; 450W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 29mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW88N65M5-4 stw88n65m5-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.5A; Idm: 336A; 450W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.5A
Pulsed drain current: 336A
Power dissipation: 450W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8N120K5 stw8n120k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 12A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.65Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8N90K5 stw8n90k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; Idm: 32A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Pulsed drain current: 32A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW8NK80Z STP8NK80Z.pdf
STW8NK80Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Technology: SuperMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Case: TO247
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9N150 STW9N150.pdf
STW9N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 5A; 320W; TO247
Mounting: THT
Power dissipation: 320W
Polarisation: unipolar
Technology: PowerMesh™
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 1.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247
On-state resistance: 2.5Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9N80K5 stw9n80k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 4.4A; Idm: 28A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.4A
Pulsed drain current: 28A
Power dissipation: 110W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9NK90Z STF9NK90Z.pdf
STW9NK90Z
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW9NK95Z en.CD00173854.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 4.41A; Idm: 28A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 4.41A
Pulsed drain current: 28A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.15Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA12N120K5 stwa12n120k5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 7.6A
Pulsed drain current: 48A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Gate charge: 44.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STWA20N95DK5 stwa20n95dk5.pdf
Hersteller: STMicroelectronics
STWA20N95DK5 THT N channel transistors
Produkt ist nicht verfügbar
Wählen Sie Seite:    << Vorherige Seite ]  1 268 536 804 1072 1189 1190 1191 1192 1193 1194 1195 1196 1197 1198 1199 1340 1608 1876 2144 2412 2680 2683  Nächste Seite >> ]