Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160548) > Seite 184 nach 2676
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STR735FZ2H6 | STMicroelectronics |
 Description: IC MCU 32BIT 256KB FLSH 144LFBGA |
Produkt ist nicht verfügbar |
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STR735FZ2H7 | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLSH 144LFBGA |
Produkt ist nicht verfügbar |
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STR736FV0T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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STR736FV0T7 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 100LQFP |
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STR736FV1T6 | STMicroelectronics |
Description: IC MCU 32BIT 128KB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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| STR750-D/RAIS | STMicroelectronics |
Description: RAISONANCE REVA STR75XF EVAL BRD |
Produkt ist nicht verfügbar |
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STR750FV0H6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 100LFBGA |
Produkt ist nicht verfügbar |
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STR750FV1H6 | STMicroelectronics |
Description: IC MCU 32BIT 128KB FLASH 100BGA |
Produkt ist nicht verfügbar |
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STR752FR0T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 64LQFP |
Produkt ist nicht verfügbar |
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STR752FR1T6 | STMicroelectronics |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 60MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 11x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, SPI, SSI, SSP, UART/USART Peripherals: DMA, PWM, WDT Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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STR755FR0T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 64LQFP |
Produkt ist nicht verfügbar |
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STR755FR1T6 | STMicroelectronics |
Description: IC MCU 32BIT 128KB FLASH 64LQFP |
Produkt ist nicht verfügbar |
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| STR755FV0H6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 64LFBGA |
Produkt ist nicht verfügbar |
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STR755FV1H6 | STMicroelectronics |
Description: IC MCU 32BIT 128KB FLASH 64LFBGA |
Produkt ist nicht verfügbar |
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| STR7-RVDK/BAS | STMicroelectronics |
Description: KIT DEV ARM REALVIEW STR7/9 MCU |
Produkt ist nicht verfügbar |
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| STR912-D/RAIS | STMicroelectronics |
Description: RAISONANCE REVA STR91XF EVAL BRD |
Produkt ist nicht verfügbar |
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| STR91X-DK/IAR | STMicroelectronics |
Description: IAR KICKSTART STR91XF EVAL BRD |
Produkt ist nicht verfügbar |
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STR91X-SK/HIT | STMicroelectronics |
Description: HITEX STR91XF EVAL BRD |
Produkt ist nicht verfügbar |
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| STR9-DK/RAIS | STMicroelectronics |
Description: KIT DEV RAISONANCE STR7/9 |
Produkt ist nicht verfügbar |
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| STR9-RVDK/BAS | STMicroelectronics |
Description: KIT DEV ARM REALVIEW STR7/9 MCU |
Produkt ist nicht verfügbar |
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| STREALIZER-II | STMicroelectronics |
Description: KIT DEVELOPMENT IDE |
Produkt ist nicht verfügbar |
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| STR-EW/D/IAR | STMicroelectronics |
Description: KIT DEV EWARM STD LICENSE DONGLE |
Produkt ist nicht verfügbar |
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| STR-EW/IAR | STMicroelectronics |
Description: KIT DEV EWARM STD LOCKED HOST PC |
Produkt ist nicht verfügbar |
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| STR-EW-BL/D/IAR | STMicroelectronics |
Description: KIT DEV EWARM-BL LICENSE DONGLE |
Produkt ist nicht verfügbar |
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| STR-EW-BL/IAR | STMicroelectronics |
Description: KIT DEV EWARM-BL LOCKED HOST PC |
Produkt ist nicht verfügbar |
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| STR-EWDOC/IAR | STMicroelectronics |
Description: KIT DEV EWARM DOC |
Produkt ist nicht verfügbar |
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| STR-RVICE/ME | STMicroelectronics |
Description: DEBUGGER/PROGRAMMER STR7 & STR9 |
Produkt ist nicht verfügbar |
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STS3DNE60L | STMicroelectronics |
Description: MOSFET 2N-CH 60V 3A 8SOIC |
Produkt ist nicht verfügbar |
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STS4DNF60 | STMicroelectronics |
Description: MOSFET 2N-CH 60V 4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC |
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STSA851-AP | STMicroelectronics |
Description: TRANS NPN 60V 5A TO92AP Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92AP Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.1 W |
Produkt ist nicht verfügbar |
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STSJ100NHS3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 100A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOIC-EP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
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STT13005 | STMicroelectronics |
Description: TRANS NPN 400V 2A SOT32-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Supplier Device Package: SOT-32-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 45 W |
Produkt ist nicht verfügbar |
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STT13005D | STMicroelectronics |
Description: TRANS NPN 400V 2A SOT32-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Supplier Device Package: SOT-32-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 45 W |
Produkt ist nicht verfügbar |
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STTH1003G | STMicroelectronics |
Description: DIODE ARRAY GP 300V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 300 V |
Produkt ist nicht verfügbar |
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STTH120L04TV1 | STMicroelectronics |
Description: DIODE MODULE 400V 60A ISOTOP |
Produkt ist nicht verfügbar |
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STTH1210G | STMicroelectronics |
Description: DIODE GEN PURP 1KV 12A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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STTH1212G | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 12A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
Produkt ist nicht verfügbar |
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STTH15L06G-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: D²PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH16L06CG-TR | STMicroelectronics |
Description: DIODE ARRAY GP 600V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH2002G | STMicroelectronics |
Description: DIODE GEN PURP 200V 20A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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STTH2003CR | STMicroelectronics |
Description: DIODE ARRAY GP 300V 10A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Current - Reverse Leakage @ Vr: 20 µA @ 300 V |
Produkt ist nicht verfügbar |
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STTH2R02Q | STMicroelectronics |
Description: DIODE GEN PURP 200V 2A DO15 Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
Produkt ist nicht verfügbar |
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STTH3002G | STMicroelectronics |
Description: DIODE GEN PURP 200V 30A D2PAK Packaging: Tube Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A Current - Reverse Leakage @ Vr: 20 µA @ 200 V |
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;;2.jpg "STTH312B") |
STTH312B | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 3A DPAK |
Produkt ist nicht verfügbar |
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| STTH4R02B | STMicroelectronics |
Description: DIODE GEN PURP 200V 4A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
Produkt ist nicht verfügbar |
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.jpg "STTH506B") |
STTH506B | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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STTH506D | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A TO220AC |
auf Bestellung 361 Stücke: Lieferzeit 21-28 Tag (e) |
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.jpg "STTH512B") |
STTH512B | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 5A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V |
Produkt ist nicht verfügbar |
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STTH6006W | STMicroelectronics |
Description: DIODE GEN PURP 600V 60A DO247 Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 1163 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH602CFP | STMicroelectronics |
Description: DIODE ARRAY GP 200V 3A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-220FP Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
Produkt ist nicht verfügbar |
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STTH602CT | STMicroelectronics |
Description: DIODE ARRAY GP 200V 3A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
auf Bestellung 1763 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH60L04W | STMicroelectronics |
Description: DIODE GEN PURP 400V 60A DO247 Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: DO-247 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
Produkt ist nicht verfügbar |
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STTH8006W | STMicroelectronics |
Description: DIODE GEN PURP 600V 80A DO247 |
Produkt ist nicht verfügbar |
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STTH802B | STMicroelectronics |
Description: DIODE GEN PURP 200V 8A DPAK |
Produkt ist nicht verfügbar |
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STTH806D | STMicroelectronics |
Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
auf Bestellung 5921 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH806G | STMicroelectronics |
Description: DIODE GEN PURP 600V 8A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A Current - Reverse Leakage @ Vr: 8 µA @ 600 V |
Produkt ist nicht verfügbar |
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STTH810G | STMicroelectronics |
Description: DIODE GEN PURP 1KV 8A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
Produkt ist nicht verfügbar |
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STTH810G-TR | STMicroelectronics |
Description: DIODE GEN PURP 1KV 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH812G | STMicroelectronics |
Description: DIODE GEN PURP 1.2KV 8A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A Current - Reverse Leakage @ Vr: 8 µA @ 1200 V |
Produkt ist nicht verfügbar |
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STTH8R06G | STMicroelectronics |
Description: DIODE GEN PURP 600V 8A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
Produkt ist nicht verfügbar |
| STR735FZ2H6 |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLSH 144LFBGA
Description: IC MCU 32BIT 256KB FLSH 144LFBGA
Produkt ist nicht verfügbar
| STR735FZ2H7 |
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Hersteller: STMicroelectronics
Description: IC MCU 32BIT 256KB FLSH 144LFBGA
Description: IC MCU 32BIT 256KB FLSH 144LFBGA
Produkt ist nicht verfügbar
| STR736FV0T6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Produkt ist nicht verfügbar
| STR736FV0T7 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Description: IC MCU 32BIT 64KB FLASH 100LQFP
Produkt ist nicht verfügbar
| STR736FV1T6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Produkt ist nicht verfügbar
| STR750-D/RAIS |
|
Hersteller: STMicroelectronics
Description: RAISONANCE REVA STR75XF EVAL BRD
Description: RAISONANCE REVA STR75XF EVAL BRD
Produkt ist nicht verfügbar
| STR750FV0H6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LFBGA
Description: IC MCU 32BIT 64KB FLASH 100LFBGA
Produkt ist nicht verfügbar
| STR750FV1H6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100BGA
Description: IC MCU 32BIT 128KB FLASH 100BGA
Produkt ist nicht verfügbar
| STR752FR0T6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Produkt ist nicht verfügbar
| STR752FR1T6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 11x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, SPI, SSI, SSP, UART/USART
Peripherals: DMA, PWM, WDT
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 60MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 11x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, SPI, SSI, SSP, UART/USART
Peripherals: DMA, PWM, WDT
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| STR755FR0T6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Produkt ist nicht verfügbar
| STR755FR1T6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Produkt ist nicht verfügbar
| STR755FV0H6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LFBGA
Description: IC MCU 32BIT 64KB FLASH 64LFBGA
Produkt ist nicht verfügbar
| STR755FV1H6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LFBGA
Description: IC MCU 32BIT 128KB FLASH 64LFBGA
Produkt ist nicht verfügbar
| STR7-RVDK/BAS |
|
Hersteller: STMicroelectronics
Description: KIT DEV ARM REALVIEW STR7/9 MCU
Description: KIT DEV ARM REALVIEW STR7/9 MCU
Produkt ist nicht verfügbar
| STR912-D/RAIS |
|
Hersteller: STMicroelectronics
Description: RAISONANCE REVA STR91XF EVAL BRD
Description: RAISONANCE REVA STR91XF EVAL BRD
Produkt ist nicht verfügbar
| STR91X-DK/IAR |
|
Hersteller: STMicroelectronics
Description: IAR KICKSTART STR91XF EVAL BRD
Description: IAR KICKSTART STR91XF EVAL BRD
Produkt ist nicht verfügbar
| STR91X-SK/HIT |
|
Hersteller: STMicroelectronics
Description: HITEX STR91XF EVAL BRD
Description: HITEX STR91XF EVAL BRD
Produkt ist nicht verfügbar
| STR9-DK/RAIS |
|
Hersteller: STMicroelectronics
Description: KIT DEV RAISONANCE STR7/9
Description: KIT DEV RAISONANCE STR7/9
Produkt ist nicht verfügbar
| STR9-RVDK/BAS |
|
Hersteller: STMicroelectronics
Description: KIT DEV ARM REALVIEW STR7/9 MCU
Description: KIT DEV ARM REALVIEW STR7/9 MCU
Produkt ist nicht verfügbar
| STREALIZER-II |
|
Hersteller: STMicroelectronics
Description: KIT DEVELOPMENT IDE
Description: KIT DEVELOPMENT IDE
Produkt ist nicht verfügbar
| STR-EW/D/IAR |
|
Hersteller: STMicroelectronics
Description: KIT DEV EWARM STD LICENSE DONGLE
Description: KIT DEV EWARM STD LICENSE DONGLE
Produkt ist nicht verfügbar
| STR-EW/IAR |
|
Hersteller: STMicroelectronics
Description: KIT DEV EWARM STD LOCKED HOST PC
Description: KIT DEV EWARM STD LOCKED HOST PC
Produkt ist nicht verfügbar
| STR-EW-BL/D/IAR |
|
Hersteller: STMicroelectronics
Description: KIT DEV EWARM-BL LICENSE DONGLE
Description: KIT DEV EWARM-BL LICENSE DONGLE
Produkt ist nicht verfügbar
| STR-EW-BL/IAR |
|
Hersteller: STMicroelectronics
Description: KIT DEV EWARM-BL LOCKED HOST PC
Description: KIT DEV EWARM-BL LOCKED HOST PC
Produkt ist nicht verfügbar
| STR-EWDOC/IAR |
|
Hersteller: STMicroelectronics
Description: KIT DEV EWARM DOC
Description: KIT DEV EWARM DOC
Produkt ist nicht verfügbar
| STR-RVICE/ME |
|
Hersteller: STMicroelectronics
Description: DEBUGGER/PROGRAMMER STR7 & STR9
Description: DEBUGGER/PROGRAMMER STR7 & STR9
Produkt ist nicht verfügbar
| STS3DNE60L |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 3A 8SOIC
Description: MOSFET 2N-CH 60V 3A 8SOIC
Produkt ist nicht verfügbar
| STS4DNF60 |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 60V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
| STSA851-AP |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 60V 5A TO92AP
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92AP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.1 W
Description: TRANS NPN 60V 5A TO92AP
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92AP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.1 W
Produkt ist nicht verfügbar
| STSJ100NHS3LL |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 100A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOIC-EP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 30V 100A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOIC-EP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
| STT13005 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
Produkt ist nicht verfügbar
| STT13005D |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
Produkt ist nicht verfügbar
| STTH1003G |
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Description: DIODE ARRAY GP 300V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Produkt ist nicht verfügbar
| STTH120L04TV1 |
|
Hersteller: STMicroelectronics
Description: DIODE MODULE 400V 60A ISOTOP
Description: DIODE MODULE 400V 60A ISOTOP
Produkt ist nicht verfügbar
| STTH1210G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
| STTH1212G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
| STTH15L06G-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE GEN PURP 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D²PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.19 EUR |
| 2000+ | 2.04 EUR |
| STTH16L06CG-TR |
|
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE ARRAY GP 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.75 EUR |
| STTH2002G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 200V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
| STTH2003CR |
|
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Description: DIODE ARRAY GP 300V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
Produkt ist nicht verfügbar
| STTH2R02Q |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar
| STTH3002G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 200V 30A D2PAK
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Description: DIODE GEN PURP 200V 30A D2PAK
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Produkt ist nicht verfügbar
| STTH312B |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 3A DPAK
Description: DIODE GEN PURP 1.2KV 3A DPAK
Produkt ist nicht verfügbar
| STTH4R02B |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 200V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar
| STTH506B |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
| STTH506D |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A TO220AC
Description: DIODE GEN PURP 600V 5A TO220AC
auf Bestellung 361 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.99 EUR |
| 10+ | 4.49 EUR |
| 100+ | 3.61 EUR |
| STTH512B |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
| STTH6006W |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GEN PURP 600V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 1163 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.77 EUR |
| 30+ | 6.16 EUR |
| 120+ | 5.28 EUR |
| 510+ | 4.69 EUR |
| 1020+ | 4.02 EUR |
| STTH602CFP |
|
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Produkt ist nicht verfügbar
| STTH602CT |
|
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 200V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE ARRAY GP 200V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
auf Bestellung 1763 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 3.07 EUR |
| 11+ | 2.51 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.66 EUR |
| 1000+ | 1.35 EUR |
| STTH60L04W |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 400V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 400V 60A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
| STTH8006W |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 80A DO247
Description: DIODE GEN PURP 600V 80A DO247
Produkt ist nicht verfügbar
| STTH802B |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 200V 8A DPAK
Description: DIODE GEN PURP 200V 8A DPAK
Produkt ist nicht verfügbar
| STTH806D |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
auf Bestellung 5921 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.64 EUR |
| 10+ | 4.68 EUR |
| 100+ | 3.72 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.67 EUR |
| 2000+ | 2.54 EUR |
| 5000+ | 2.44 EUR |
| STTH806G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
Produkt ist nicht verfügbar
| STTH810G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
| STTH810G-TR |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.37 EUR |
| STTH812G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 1200 V
Produkt ist nicht verfügbar
| STTH8R06G |
|
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar