Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (129455) > Seite 2075 nach 2158
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| Z0107MA 2AL2 | STMicroelectronics |
 Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack |
Produkt ist nicht verfügbar |
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STPS5L40 | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Leakage current: 75mA Kind of package: Ammo Pack |
auf Bestellung 841 Stücke: Lieferzeit 14-21 Tag (e) |
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Z0405MH | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1668 Stücke: Lieferzeit 14-21 Tag (e) |
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SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 3668 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32L452VET6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 83 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 160kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of 12bit D/A converters: 1 Family: STM32L4 Kind of core: 32-bit Number of comparators: 2 |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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| ACS108-8TN-TR | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 800mA; SOT223; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 0.8A Case: SOT223 Gate current: 5mA Mounting: SMD |
auf Bestellung 65000 Stücke: Lieferzeit 14-21 Tag (e) |
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| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOIC8 On-state resistance: 0.12Ω Active logical level: low Operating temperature: -40...150°C Integrated circuit features: thermal protection |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
auf Bestellung 1884 Stücke: Lieferzeit 14-21 Tag (e) |
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| STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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| VL53L3CXV0DH/1 | STMicroelectronics |
Category: Unclassified Description: VL53L3CXV0DH/1 |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF20N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 30W Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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STGWT60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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| STW75N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 40 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 602 Stücke: Lieferzeit 14-21 Tag (e) |
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STP110N10F7 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Pulsed drain current: 415A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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TS914IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.5V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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TS914ID | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV Type of integrated circuit: operational amplifier Bandwidth: 800kHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.5V/μs Integrated circuit features: low power; rail-to-rail Input offset voltage: 12mV Input bias current: 0.3nA Input offset current: 0.2nA Quiescent current: 400µA |
Produkt ist nicht verfügbar |
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TS914AIDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
Produkt ist nicht verfügbar |
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TS914AID | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.5V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
Produkt ist nicht verfügbar |
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TS914AIYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
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TS914IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
Produkt ist nicht verfügbar |
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BTB04-600SL | STMicroelectronics |
 Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10mA Features of semiconductor devices: lighting application Mounting: THT Kind of package: tube |
auf Bestellung 437 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP16N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 19.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STW56N65M2-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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| STD16N65M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 0.32Ω Mounting: SMD Gate charge: 19.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STH315N10F7-2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: H2PAK-2 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC |
Produkt ist nicht verfügbar |
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| STH315N10F7-6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: TO263-7 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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STP200N3LL | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W Kind of package: tube Kind of channel: enhancement Mounting: THT Case: TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Gate charge: 53nC On-state resistance: 2.4mΩ Power dissipation: 176.5W Gate-source voltage: ±20V Pulsed drain current: 480A |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
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LM833DT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: 2 Mounting: SMT Voltage supply range: 5...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
auf Bestellung 3590 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1458IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 2.5...15V DC; 5...30V DC Case: SO8 Input offset voltage: 6mV Kind of package: reel; tape Quiescent current: 2.3mA Slew rate: 0.8V/μs Operating temperature: -40...105°C Input offset current: 300nA Input bias current: 0.8µA |
auf Bestellung 3314 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1458DT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 2.5...15V DC; 5...30V DC Case: SO8 Input offset voltage: 6mV Kind of package: reel; tape Quiescent current: 2.3mA Slew rate: 0.8V/μs Operating temperature: 0...70°C Input offset current: 300nA Input bias current: 0.8µA |
auf Bestellung 2525 Stücke: Lieferzeit 14-21 Tag (e) |
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LD39150PT-R | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.4V Output voltage: 1.22...5V Output current: 1.5A Case: PPAK Mounting: SMD Manufacturer series: LD39150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1.5...3% Number of channels: 1 Input voltage: 2.5...6V |
auf Bestellung 2449 Stücke: Lieferzeit 14-21 Tag (e) |
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| LD39150PU-R | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6 Operating temperature: -40...125°C Case: DFN6 Mounting: SMD Type of integrated circuit: voltage regulator Voltage drop: 0.4V Number of channels: 1 Output voltage: 1.22...5V Output current: 1.5A Tolerance: 1.5...3% Input voltage: 2.5...6V Manufacturer series: LD39150 Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| LD39150PU33R | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 3.3V Output current: 1.5A Case: DFN6 Mounting: SMD Manufacturer series: LD39150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1.5...3% Number of channels: 1 Input voltage: 2.5...6V |
Produkt ist nicht verfügbar |
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Gate charge: 10.5nC On-state resistance: 2.5Ω Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Gate-source voltage: ±30V Drain-source voltage: 800V Polarisation: unipolar Case: TO220FP Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
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STP4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STL4N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STD4N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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| STU4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| STP14N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
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STM32L052K8U6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 27 Case: UFQFPN32 Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x3; USART x2; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 12bit D/A converters: 1 Number of 16bit timers: 5 Family: STM32L0 Kind of core: 32-bit Kind of package: in-tray |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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| STM8S207K8T6C | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Interface: I2C; IrDA; SPI; UART Clock frequency: 24MHz Mounting: SMD Family: STM8S Type of integrated circuit: STM8 microcontroller Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 7 Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH Case: LQFP32 Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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| STM8L152C8U6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: UFQFPN48 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI x2; USART x2 Integrated circuit features: Beeper; IWDG; RTC; WWDG Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH Number of 12bit A/D converters: 28 Number of 12bit D/A converters: 2 Number of 16bit timers: 4 Number of 8bit timers: 1 Number of PWM channels: 5 Family: STM8L Kind of core: 8-bit Number of comparators: 2 |
Produkt ist nicht verfügbar |
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ACS120-7SB-TR | STMicroelectronics |
Category: Thyristors - others Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™ Type of thyristor: AC switch Max. load current: 2A Case: DPAK Mounting: SMD Kind of package: reel; tape Gate current: 10mA Number of switches: 1 Max. off-state voltage: 700V Technology: ASD™ Features of semiconductor devices: internally triggered |
auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) |
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M24C08-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8 Interface: I2C Memory: 8kb EEPROM Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Memory organisation: 1kx8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial |
auf Bestellung 3108 Stücke: Lieferzeit 14-21 Tag (e) |
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M24C08-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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M24C08-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| M24C08-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| M24C08-FDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| M24C08-FMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| M24C08-WDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kBEEPROM; I2C; 1kx8bit; TSSOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kB EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS30L60CT | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Max. load current: 30A Max. forward impulse current: 230A Leakage current: 130mA Kind of package: tube Heatsink thickness: 1.23...1.32mm |
Produkt ist nicht verfügbar |
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BTA10-600CRG | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 10A Case: TO220ABIns Gate current: 25mA Mounting: THT Kind of package: tube |
auf Bestellung 192 Stücke: Lieferzeit 14-21 Tag (e) |
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BTA10-800BWRG | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™ Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 10A Case: TO220ABIns Gate current: 50mA Mounting: THT Kind of package: tube Technology: Snubberless™ |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE56A | STMicroelectronics |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 47.8V Breakdown voltage: 56V Max. forward impulse current: 19.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
auf Bestellung 729 Stücke: Lieferzeit 14-21 Tag (e) |
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T1635H-6T | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature Type of thyristor: triac Case: TO220AB Features of semiconductor devices: high temperature Kind of package: tube Mounting: THT Gate current: 35mA Max. load current: 16A Max. forward impulse current: 0.168kA Max. off-state voltage: 0.6kV |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F070CBT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 48MHz; LQFP48; 2.4÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 37 Case: LQFP48 Supply voltage: 2.4...3.6V DC Interface: I2C x2; SPI x2; UART x4; USB Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Family: STM32F0 Kind of core: 32-bit Number of 16bit timers: 8 |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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| STB18N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 110W Case: D2PAK; TO263 On-state resistance: 255mΩ Mounting: SMD Gate charge: 21.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| Z0107MA 2AL2 |
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Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS5L40 |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 435+ | 0.16 EUR |
| 575+ | 0.12 EUR |
| Z0405MH |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 188+ | 0.38 EUR |
| 235+ | 0.3 EUR |
| 270+ | 0.27 EUR |
| SM15T30A |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 94+ | 0.76 EUR |
| 103+ | 0.7 EUR |
| 125+ | 0.57 EUR |
| 136+ | 0.53 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| SM15T30CA |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 3668 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 159+ | 0.45 EUR |
| 172+ | 0.42 EUR |
| 2500+ | 0.37 EUR |
| STM32L452VET6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Number of comparators: 2
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.21 EUR |
| 10+ | 7.32 EUR |
| 12+ | 6.12 EUR |
| 25+ | 6.01 EUR |
| ACS108-8TN-TR |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 800mA; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Category: Triacs
Description: Triac; 800V; 800mA; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: SOT223
Gate current: 5mA
Mounting: SMD
auf Bestellung 65000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
| VNS3NV04PTR-E |
|
Hersteller: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.84 EUR |
| SMCJ33CA-TR |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
auf Bestellung 1884 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 120+ | 0.6 EUR |
| 155+ | 0.46 EUR |
| 173+ | 0.41 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| STL120N10F8 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 28+ | 2.56 EUR |
| 38+ | 1.93 EUR |
| 41+ | 1.77 EUR |
| 75+ | 1.72 EUR |
| VL53L3CXV0DH/1 |
|
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4500+ | 3.3 EUR |
| STF20N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGWT60H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 5.05 EUR |
| 17+ | 4.29 EUR |
| STGWA60H65DFB |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW75N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD45H11T4 |
|
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 602 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 95+ | 0.76 EUR |
| 137+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| STP110N10F7 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.06 EUR |
| 28+ | 2.6 EUR |
| TS914IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 3.98 EUR |
| TS914ID |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS914AIDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS914AID |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS914AIYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TS914IYDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTB04-600SL | |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 78+ | 0.93 EUR |
| 88+ | 0.82 EUR |
| 115+ | 0.63 EUR |
| 127+ | 0.56 EUR |
| STP16N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW56N65M2-4 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD16N65M2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STH315N10F7-2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STH315N10F7-6 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP200N3LL |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Gate charge: 53nC
On-state resistance: 2.4mΩ
Power dissipation: 176.5W
Gate-source voltage: ±20V
Pulsed drain current: 480A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Gate charge: 53nC
On-state resistance: 2.4mΩ
Power dissipation: 176.5W
Gate-source voltage: ±20V
Pulsed drain current: 480A
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 1.77 EUR |
| 64+ | 1.13 EUR |
| 72+ | 1 EUR |
| 100+ | 0.94 EUR |
| LM833DT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 3590 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 216+ | 0.33 EUR |
| 242+ | 0.3 EUR |
| 274+ | 0.26 EUR |
| MC1458IDT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
auf Bestellung 3314 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 190+ | 0.38 EUR |
| 206+ | 0.35 EUR |
| 233+ | 0.31 EUR |
| 275+ | 0.26 EUR |
| 302+ | 0.24 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| 2500+ | 0.21 EUR |
| MC1458DT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 128+ | 0.56 EUR |
| 147+ | 0.49 EUR |
| 177+ | 0.4 EUR |
| 250+ | 0.36 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.29 EUR |
| LD39150PT-R |
|
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 81+ | 0.89 EUR |
| 89+ | 0.81 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.7 EUR |
| LD39150PU-R |
|
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LD39150PU33R |
|
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF4N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Gate charge: 10.5nC
On-state resistance: 2.5Ω
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Polarisation: unipolar
Case: TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Gate charge: 10.5nC
On-state resistance: 2.5Ω
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Polarisation: unipolar
Case: TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| 52+ | 1.4 EUR |
| 62+ | 1.16 EUR |
| STP4N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STL4N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD4N80K5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STU4N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP14N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32L052K8U6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 12bit D/A converters: 1
Number of 16bit timers: 5
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 12bit D/A converters: 1
Number of 16bit timers: 5
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 2.76 EUR |
| 28+ | 2.63 EUR |
| 34+ | 2.16 EUR |
| 35+ | 2.07 EUR |
| STM8S207K8T6C |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Clock frequency: 24MHz
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Case: LQFP32
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Clock frequency: 24MHz
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Case: LQFP32
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM8L152C8U6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 12bit D/A converters: 2
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 12bit D/A converters: 2
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of comparators: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ACS120-7SB-TR |
|
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Number of switches: 1
Max. off-state voltage: 700V
Technology: ASD™
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Number of switches: 1
Max. off-state voltage: 700V
Technology: ASD™
Features of semiconductor devices: internally triggered
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 1.79 EUR |
| 66+ | 1.09 EUR |
| 100+ | 0.93 EUR |
| M24C08-RMN6TP |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Interface: I2C
Memory: 8kb EEPROM
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Interface: I2C
Memory: 8kb EEPROM
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
auf Bestellung 3108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 2500+ | 0.15 EUR |
| M24C08-RDW6TP |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M24C08-FMN6TP |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M24C08-RMC6TG |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M24C08-FDW6TP |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M24C08-FMC6TG |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| M24C08-WDW6TP |
|
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kBEEPROM; I2C; 1kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kB EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kBEEPROM; I2C; 1kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kB EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.11 EUR |
| STPS30L60CT |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTA10-600CRG |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 25mA
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 25mA
Mounting: THT
Kind of package: tube
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.72 EUR |
| 77+ | 0.94 EUR |
| 93+ | 0.78 EUR |
| 100+ | 0.72 EUR |
| BTA10-800BWRG |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
Category: Triacs
Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 71+ | 1.02 EUR |
| 87+ | 0.82 EUR |
| 1.5KE56A |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
auf Bestellung 729 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 129+ | 0.55 EUR |
| 250+ | 0.47 EUR |
| 300+ | 0.46 EUR |
| 500+ | 0.42 EUR |
| 600+ | 0.41 EUR |
| T1635H-6T |
|
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Case: TO220AB
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: THT
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Case: TO220AB
Features of semiconductor devices: high temperature
Kind of package: tube
Mounting: THT
Gate current: 35mA
Max. load current: 16A
Max. forward impulse current: 0.168kA
Max. off-state voltage: 0.6kV
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.46 EUR |
| STM32F070CBT6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP48; 2.4÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2.4...3.6V DC
Interface: I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Family: STM32F0
Kind of core: 32-bit
Number of 16bit timers: 8
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP48; 2.4÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2.4...3.6V DC
Interface: I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Family: STM32F0
Kind of core: 32-bit
Number of 16bit timers: 8
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3 EUR |
| 27+ | 2.69 EUR |
| STB18N60M2 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
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