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Name: STW9N150
Brand: STMicroelectronics
SKU: 1983209-3
Price: 30.76 EUR
Availability: InStock

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STW3040

STMicroelectronics

Description: TRANS NPN 400V 30A TO247-3
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 6A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 4A, 20A
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Operating Temperature: 150°C (TJ)
Transistor Type: NPN

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STW30NM60N

STMicroelectronics

Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

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STW30NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V

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STW43NM50N

STMicroelectronics

Description: MOSFET N-CH 500V 37A TO247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3

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STW43NM60N

STMicroelectronics

Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V

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STW43NM60ND

STMicroelectronics

stpower-n-channel-mosfets-gt-200-v-to-700-v.html

Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V

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STW55NM50N

STMicroelectronics

Description: MOSFET N-CH 500V 54A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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STW75NF30

STMicroelectronics

Description: MOSFET N-CH 300V 60A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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STW90NF20

STMicroelectronics

Description: MOSFET N-CH 200V 83A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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STW9N150

STMicroelectronics

Description: MOSFET N-CH 1500V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V

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2+	15.38 EUR
30+	9.05 EUR
120+	7.66 EUR

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STY80NM60N

STMicroelectronics

Description: MOSFET N-CH 600V 74A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 447W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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DVIULC6-2P6

STMicroelectronics

Description: TVS DIODE 5VWM 17VC SOT666
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-666
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 825MHz
Applications: General Purpose
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)

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STB15NM60ND

STMicroelectronics

stpower-n-channel-mosfets-gt-350-v-to-700-v.html

Description: MOSFET N-CH 600V 14A D2PAK

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STB21NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V

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STB23NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 19.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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STB25NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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STB30NM60N

STMicroelectronics

Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

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STB30NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V

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STB3N62K3

STMicroelectronics

Description: MOSFET N-CH 620V 2.7A D2PAK
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA

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STD11NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

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STD3N62K3

STMicroelectronics

Description: MOSFET N-CH 620V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

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STD90N4F3

STMicroelectronics

Description: MOSFET N-CH 40V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

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STGB19NC60KT4

STMicroelectronics

Description: IGBT 600V 35A 125W D2PAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
Gate Charge: 55 nC
Test Condition: 480V, 12A, 10Ohm, 15V
Switching Energy: 165µJ (on), 255µJ (off)
Td (on/off) @ 25°C: 30ns/105ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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STL150N3LLH5

STMicroelectronics

Description: MOSFET N-CH 30V 195A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)

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STL65N3LLH5

STMicroelectronics

Description: MOSFET N-CH 30V 65A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)

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STL75NH3LL

STMicroelectronics

Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)

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STL80N4LLF3

STMicroelectronics

Description: MOSFET N-CH 40V 80A POWERFLAT6X5

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STPS5L60S

STMicroelectronics

Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V

auf Bestellung 15000 Stücke:

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5000+	0.31 EUR

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STS15N4LLF3

STMicroelectronics

Description: MOSFET N-CH 40V 15A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

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DVIULC6-2P6

STMicroelectronics

Produkt ist nicht verfügbar

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STB15NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 14A D2PAK

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STB23NM60ND

STMicroelectronics

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STB3N62K3

STMicroelectronics

Description: MOSFET N-CH 620V 2.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

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STD11NM60ND

STMicroelectronics

Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V

auf Bestellung 2489 Stücke:

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3+	7.04 EUR
10+	4.66 EUR
100+	3.31 EUR
500+	2.73 EUR
1000+	2.54 EUR

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STD3N62K3

STMicroelectronics

Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V

auf Bestellung 3046 Stücke:

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100+	0.9 EUR
500+	0.82 EUR
1000+	0.77 EUR

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STD90N4F3

STMicroelectronics

Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V

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STL65N3LLH5

STMicroelectronics

Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V

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13+	1.44 EUR

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STL75NH3LL

STMicroelectronics

Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V

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STL80N4LLF3

STMicroelectronics

Description: MOSFET N-CH 40V 80A POWERFLAT6X5

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STPS5L60S

STMicroelectronics

Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V

auf Bestellung 17141 Stücke:

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12+	1.48 EUR
20+	0.92 EUR
100+	0.6 EUR
500+	0.46 EUR
1000+	0.41 EUR

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STL80N4LLF3

STMicroelectronics

Description: MOSFET N-CH 40V 80A POWERFLAT6X5

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STEVAL-CCA010V1

STMicroelectronics

Description: BOARD EVAL TSH122 BASED
Embedded: No
Primary Attributes: Gain 6dB, Filter with SAG Correction
Supplied Contents: Board(s)
Utilized IC / Part: TSH122
Type: Video
Function: Amplifier, Single
Packaging: Bulk

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STEVAL-ILL015V1

STMicroelectronics

Description: BOARD EVAL STP24DP05/STM32 BASED
Part Status: Active
Outputs and Type: 16 Non-Isolated Outputs
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: STP24DP05
Current - Output / Channel: 80mA
Voltage - Input: 7.5V ~ 18V
Voltage - Output: 20V
Packaging: Bulk

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BAS70-08SFILM

STMicroelectronics

Description: DIODE ARR SCHOTT 70V 70MA SOT323
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323-6L
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)

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L2293QTR

STMicroelectronics

Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active

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L6229QTR

STMicroelectronics

Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active

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L6743DTR

STMicroelectronics

Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 12V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 41 V
Supplier Device Package: 8-SOIC
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, -
Part Status: Obsolete
DigiKey Programmable: Not Verified

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STCL132KRDEAW89

STMicroelectronics

Description: IC OSC SILICON 32.768KHZ SOT3235
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Frequency: 32.768kHz
Type: Oscillator, Silicon
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Supplier Device Package: SOT-323-5
Current - Supply: 60 µA

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STG4210QTR

STMicroelectronics

Description: IC SWITCH SPST-NOX2 1.3OHM 10QFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 85pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -72dB @ 100kHz
Charge Injection: 49pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-QFN (1.8x1.4)
-3db Bandwidth: 58MHz
On-State Resistance (Max): 1.3Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)

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STHDLS101TQTR

STMicroelectronics

Description: IC VIDEO LEVEL SHIFTER 48QFN
Control Interface: Serial
Supplier Device Package: 48-QFN-EP (7x7)
Standards: HDMI 1.3
Applications: Consumer Video
Voltage - Supply: 3.3V
Function: Level Shifter
Mounting Type: Surface Mount
Package / Case: 48-QFN
Packaging: Tape & Reel (TR)

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STOD02PUR

STMicroelectronics

Description: IC REG AMOLED DISPLAY 2OUT 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Voltage - Output: 4.6V, -2.3V ~ -5.9V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 2.5V ~ 4.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, AMOLED Display
Supplier Device Package: 12-DFN (3x3)
Part Status: Obsolete

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STP16CPS05PTR

STMicroelectronics

Description: IC LED DRVR LINEAR 100MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete

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STTS424BDN3F

STMicroelectronics

Description: IC MEMORY MOD TEMP SENSOR 8-TDFN

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L2293QTR

STMicroelectronics

Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active

auf Bestellung 4767 Stücke:

Lieferzeit 10-14 Tag (e)

4+	5.63 EUR
10+	4.25 EUR
25+	3.91 EUR
100+	3.53 EUR
250+	3.35 EUR
500+	3.24 EUR
1000+	3.15 EUR

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L6229QTR

STMicroelectronics

Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active

auf Bestellung 7401 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.85 EUR
10+	5.99 EUR
25+	5.52 EUR
100+	5.01 EUR
250+	4.79 EUR

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STTS424BDN3F

STMicroelectronics

Description: IC MEMORY MOD TEMP SENSOR 8-TDFN

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STTS424BDN3F

STMicroelectronics

Description: IC MEMORY MOD TEMP SENSOR 8-TDFN

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L5986TR

STMicroelectronics

Description: IC REG BUCK ADJ 2.5A 8VFQFPN
Voltage - Input (Min): 2.9V
Voltage - Output (Max): 18V
Synchronous Rectifier: No
Supplier Device Package: 8-VFQFPN (3x3)
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 250kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 2.5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.6V

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STEVAL-MKI023V1

STMicroelectronics

Description: BOARD EVAL FOR LISY300AL

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HCF4041UM013TR

STMicroelectronics

Description: IC BUFFER NON-INVERT 20V 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 38mA, 38mA
Supplier Device Package: 14-SO

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STW3040

Hersteller: STMicroelectronics
Description: TRANS NPN 400V 30A TO247-3
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 6A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 4A, 20A
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Operating Temperature: 150°C (TJ)
Transistor Type: NPN

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STW30NM60N

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

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STW30NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V

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STW43NM50N

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 37A TO247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3

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STW43NM60N

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V

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STW43NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V

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STW55NM50N

Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 54A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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STW75NF30

Hersteller: STMicroelectronics
Description: MOSFET N-CH 300V 60A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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STW90NF20

Hersteller: STMicroelectronics
Description: MOSFET N-CH 200V 83A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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STW9N150

Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V

auf Bestellung 495 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
2+	15.38 EUR
30+	9.05 EUR
120+	7.66 EUR

Mindestbestellmenge: 2

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STY80NM60N

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 74A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 447W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube

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DVIULC6-2P6

Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT666
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-666
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 825MHz
Applications: General Purpose
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)

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STB15NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A D2PAK

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STB21NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V

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STB23NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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STB25NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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STB30NM60N

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V

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STB30NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V

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STB3N62K3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A D2PAK
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA

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STD11NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

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STD3N62K3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
2500+	0.67 EUR

Mindestbestellmenge: 2500

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STD90N4F3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

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STGB19NC60KT4

Hersteller: STMicroelectronics
Description: IGBT 600V 35A 125W D2PAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
Gate Charge: 55 nC
Test Condition: 480V, 12A, 10Ohm, 15V
Switching Energy: 165µJ (on), 255µJ (off)
Td (on/off) @ 25°C: 30ns/105ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

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STL150N3LLH5

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 195A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)

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STL65N3LLH5

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 65A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)

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STL75NH3LL

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)

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STL80N4LLF3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT6X5

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STPS5L60S

Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V

auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
2500+	0.34 EUR
5000+	0.31 EUR

Mindestbestellmenge: 2500

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STS15N4LLF3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 15A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)

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DVIULC6-2P6

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STB15NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 14A D2PAK

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STB23NM60ND

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STB3N62K3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

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STD11NM60ND

Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V

auf Bestellung 2489 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
3+	7.04 EUR
10+	4.66 EUR
100+	3.31 EUR
500+	2.73 EUR
1000+	2.54 EUR

Mindestbestellmenge: 3

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STD3N62K3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V

auf Bestellung 3046 Stücke:

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Anzahl	Preis
18+	1.02 EUR
100+	0.9 EUR
500+	0.82 EUR
1000+	0.77 EUR

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STD90N4F3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V

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STL65N3LLH5

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V

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11+	1.72 EUR
13+	1.44 EUR

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STL75NH3LL

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V

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STL80N4LLF3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT6X5

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STPS5L60S

Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V

auf Bestellung 17141 Stücke:

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Anzahl	Preis
12+	1.48 EUR
20+	0.92 EUR
100+	0.6 EUR
500+	0.46 EUR
1000+	0.41 EUR

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STL80N4LLF3

Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT6X5

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STEVAL-CCA010V1

Hersteller: STMicroelectronics
Description: BOARD EVAL TSH122 BASED
Embedded: No
Primary Attributes: Gain 6dB, Filter with SAG Correction
Supplied Contents: Board(s)
Utilized IC / Part: TSH122
Type: Video
Function: Amplifier, Single
Packaging: Bulk

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STEVAL-ILL015V1

Hersteller: STMicroelectronics
Description: BOARD EVAL STP24DP05/STM32 BASED
Part Status: Active
Outputs and Type: 16 Non-Isolated Outputs
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: STP24DP05
Current - Output / Channel: 80mA
Voltage - Input: 7.5V ~ 18V
Voltage - Output: 20V
Packaging: Bulk

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BAS70-08SFILM

Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323-6L
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)

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L2293QTR

Hersteller: STMicroelectronics
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active

auf Bestellung 3000 Stücke:

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3000+	3.04 EUR

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L6229QTR

Hersteller: STMicroelectronics
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active

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3000+	4.35 EUR

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L6743DTR

Hersteller: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 12V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 41 V
Supplier Device Package: 8-SOIC
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, -
Part Status: Obsolete
DigiKey Programmable: Not Verified

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STCL132KRDEAW89

Hersteller: STMicroelectronics
Description: IC OSC SILICON 32.768KHZ SOT3235
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Frequency: 32.768kHz
Type: Oscillator, Silicon
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Supplier Device Package: SOT-323-5
Current - Supply: 60 µA

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STG4210QTR

Hersteller: STMicroelectronics
Description: IC SWITCH SPST-NOX2 1.3OHM 10QFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 85pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -72dB @ 100kHz
Charge Injection: 49pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-QFN (1.8x1.4)
-3db Bandwidth: 58MHz
On-State Resistance (Max): 1.3Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)

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STHDLS101TQTR

Hersteller: STMicroelectronics
Description: IC VIDEO LEVEL SHIFTER 48QFN
Control Interface: Serial
Supplier Device Package: 48-QFN-EP (7x7)
Standards: HDMI 1.3
Applications: Consumer Video
Voltage - Supply: 3.3V
Function: Level Shifter
Mounting Type: Surface Mount
Package / Case: 48-QFN
Packaging: Tape & Reel (TR)

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STOD02PUR

Hersteller: STMicroelectronics
Description: IC REG AMOLED DISPLAY 2OUT 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Voltage - Output: 4.6V, -2.3V ~ -5.9V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 2.5V ~ 4.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, AMOLED Display
Supplier Device Package: 12-DFN (3x3)
Part Status: Obsolete

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STP16CPS05PTR

Hersteller: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete

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STTS424BDN3F

Hersteller: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN

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L2293QTR

Hersteller: STMicroelectronics
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active

auf Bestellung 4767 Stücke:

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Anzahl	Preis
4+	5.63 EUR
10+	4.25 EUR
25+	3.91 EUR
100+	3.53 EUR
250+	3.35 EUR
500+	3.24 EUR
1000+	3.15 EUR

Mindestbestellmenge: 4

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L6229QTR

Hersteller: STMicroelectronics
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active

auf Bestellung 7401 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
3+	7.85 EUR
10+	5.99 EUR
25+	5.52 EUR
100+	5.01 EUR
250+	4.79 EUR

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STTS424BDN3F

Hersteller: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN

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STTS424BDN3F

Hersteller: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN

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L5986TR

Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 2.5A 8VFQFPN
Voltage - Input (Min): 2.9V
Voltage - Output (Max): 18V
Synchronous Rectifier: No
Supplier Device Package: 8-VFQFPN (3x3)
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 250kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 2.5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.6V

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STEVAL-MKI023V1

Hersteller: STMicroelectronics
Description: BOARD EVAL FOR LISY300AL

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HCF4041UM013TR

Hersteller: STMicroelectronics
Description: IC BUFFER NON-INVERT 20V 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 20V
Number of Bits per Element: 1
Current - Output High, Low: 38mA, 38mA
Supplier Device Package: 14-SO

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