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STM32H562IGT6 STMicroelectronics stm32h562ag.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 250MHz; LQFP176; 1MBFLASH
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 250MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Interface: I2C; IrDA; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Memory: 1MB FLASH
Operating temperature: -40...85°C
Kind of core: 32-bit
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TS7221AILT TS7221AILT STMicroelectronics TS7221.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23-5; reel,tape
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Operating temperature: -40...85°C
Number of comparators: 1
Kind of package: reel; tape
Input offset current: 0.3nA
Case: SOT23-5
Operating voltage: 2.7...10V
Kind of comparator: low-power
Mounting: SMT
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STF2N80K5 STF2N80K5 STMicroelectronics STF2N80K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; TO220FP
Case: TO220FP
Mounting: THT
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 3.5Ω
Gate charge: 3nC
Polarisation: unipolar
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M95020-WMN6TP M95020-WMN6TP STMicroelectronics m95010w.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: SPI
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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STW40N60M2 STW40N60M2 STMicroelectronics STW40N60M2-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 22A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TSZ121ILT TSZ121ILT STMicroelectronics tsz121.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 8uV
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.19V/μs
Integrated circuit features: micropower; rail-to-rail; zero-drift
Quiescent current: 40µA
Input offset voltage: 8µV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.6nA
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TSZ121IYLT TSZ121IYLT STMicroelectronics tsz121.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 8uV
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.19V/μs
Integrated circuit features: micropower; rail-to-rail; zero-drift
Quiescent current: 40µA
Input offset voltage: 8µV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.6nA
Application: automotive industry
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TSZ121ICT STMicroelectronics tsz121.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 1; 1.8÷5.5VDC; SC70-5; 8uV
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Slew rate: 0.19V/μs
Integrated circuit features: micropower; rail-to-rail; zero-drift
Quiescent current: 40µA
Input offset voltage: 8µV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.6nA
Produkt ist nicht verfügbar
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TSZ121IYCT STMicroelectronics tsz121.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 2; 1.8÷5.5VDC; SC70-5
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Slew rate: 0.17V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 1µV
Input bias current: 50pA
Input offset current: 0.1nA
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STM32L152R8T6 STMicroelectronics en.CD00277537.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Memory: 4kb EEPROM; 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L1
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; PWM; RTC; watchdog
Number of 16bit timers: 8
Number of 12bit A/D converters: 20
Kind of package: in-tray
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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STM32L152R8T6A STMicroelectronics en.DM00078689.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Memory: 4kb EEPROM; 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L1
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; PWM; RTC; watchdog
Number of 16bit timers: 8
Number of 12bit A/D converters: 20
Kind of package: in-tray
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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STM32L152R8T6TR STMicroelectronics en.CD00277537.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Memory: 4kb EEPROM; 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L1
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; PWM; RTC; watchdog
Number of 16bit timers: 8
Number of 12bit A/D converters: 20
Kind of package: reel; tape
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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M95512DFKW20I/90 STMicroelectronics Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1.7÷5.5V; 5MHz; 5MHz; serial
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Clock frequency: 5MHz
Frequency: 5MHz
Kind of interface: serial
Operating temperature: -40...85°C
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L78L33ABD L78L33ABD STMicroelectronics L78L.pdf description Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.1A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.3...20V
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T3035H-8I T3035H-8I STMicroelectronics t3035h-8i.pdf Category: Triacs
Description: Triac; 800V; 30A; Igt: 35mA; TO220ABIns; tube; Ifsm: 283A
Mounting: THT
Max. forward impulse current: 283A
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 30A
Kind of package: tube
Case: TO220ABIns
Typ of triac: standard
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T3035H-6I T3035H-6I STMicroelectronics T3035H,T3050H.pdf Category: Triacs
Description: Triac; 600V; 30A; Igt: 35mA; TO220ABIns; tube; Ifsm: 284A
Mounting: THT
Max. forward impulse current: 284A
Gate current: 35mA
Technology: Snubberless™
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.6kV
Max. load current: 30A
Kind of package: tube
Case: TO220ABIns
Typ of triac: standard
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T3035H-8G-TR T3035H-8G-TR STMicroelectronics t3035h-8g.pdf Category: Triacs
Description: Triac; 800V; 30A; Igt: 35mA; D2PAK; reel,tape; Ifsm: 283A
Mounting: SMD
Max. forward impulse current: 283A
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 30A
Kind of package: reel; tape
Case: D2PAK
Typ of triac: standard
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T3035H-6T T3035H-6T STMicroelectronics en.CD00263568.pdf Category: Triacs
Description: Triac; 600V; 30A; Igt: 35mA; TO220AB; tube; Ifsm: 284A
Mounting: THT
Max. forward impulse current: 284A
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.6kV
Max. load current: 30A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
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T3035H-6G-TR STMicroelectronics en.CD00263568.pdf Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 35mA; Ifsm: 284A; high temperature
Mounting: SMD
Type of thyristor: triac
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: D2PAK
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
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T3035H-8T STMicroelectronics t3035h-8t.pdf Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 35mA; Ifsm: 283A; high temperature
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220AB
Max. load current: 30A
Max. forward impulse current: 283A
Max. off-state voltage: 0.8kV
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T3035H-6G STMicroelectronics en.CD00263568.pdf Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 35mA; Ifsm: 284A; high temperature
Mounting: SMD
Type of thyristor: triac
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: D2PAK
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
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T3035H-8G STMicroelectronics t3035h-8g.pdf Category: Triacs
Description: Triac; 800V; 30A; D2PAK; Igt: 35mA; Ifsm: 283A; high temperature
Mounting: SMD
Type of thyristor: triac
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: D2PAK
Max. load current: 30A
Max. forward impulse current: 283A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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SMCJ26A-TR SMCJ26A-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMBJ22A-TR SMBJ22A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷25.7V; 83A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...25.7V
Max. forward impulse current: 83A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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STP26N65DM2 STP26N65DM2 STMicroelectronics stp26n65dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhancement
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STGW100H65FB2-4 STMicroelectronics stgw100h65fb2-4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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STM32L151RET6 STM32L151RET6 STMicroelectronics STM32L151RET6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M3
Memory: 80kB SRAM; 512kB FLASH
Family: STM32L1
Kind of core: 32-bit
Number of 12bit A/D converters: 21
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Number of 12bit D/A converters: 2
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STM32L151RET6TR STMicroelectronics en.DM00098321.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; I2S x2; SDIO; SPI x8; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 16kB EEPROM; 80kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 21
Number of 12bit D/A converters: 2
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32L1
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STD16NF06LT4 STD16NF06LT4 STMicroelectronics STD16NF06L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STD16NF06T4 STD16NF06T4 STMicroelectronics STD16NF06T4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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SMAJ15A-TR SMAJ15A-TR STMicroelectronics SMAJxxX_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7V; 16.4A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ13A-TR SMAJ13A-TR STMicroelectronics SMAJxxX_ser.pdf description Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4V; 85A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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STEVAL-ILL053V2 STMicroelectronics STEVAL-ILL053V2.pdf Category: STM development kits
Description: Dev.kit: evaluation; Comp: L6562A,L6599AT; 45÷55kHz; 48V
Kind of integrated circuit: LED driver
Operating voltage: 85...305V AC
Frequency: 45...55kHz
Type of development kit: evaluation
Components: L6562A; L6599AT
Kit contents: base board
Dimensions: 75x135x30mm
Connection: screw
Output voltage: 48V
Additional functions: PFC
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L5150CJTR L5150CJTR STMicroelectronics l5150cj.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PowerSSO12
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.6...40V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...150°C
Integrated circuit features: RESET output; watchdog
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: PowerSSO12
Number of channels: 1
Tolerance: ±2%
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L5150BNTR L5150BNTR STMicroelectronics l5150bn.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.6...40V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Tolerance: ±2%
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SMAJ13CA-TR SMAJ13CA-TR STMicroelectronics SMAJxxX_ser.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4V; 85A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Kind of package: reel; tape
Manufacturer series: SMAJ
Breakdown voltage: 14.4V
Max. forward impulse current: 85A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Leakage current: 1µA
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BZW04-5V8B BZW04-5V8B STMicroelectronics bzw04.pdf description Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45V; 174A; bidirectional; ±5%; DO15; 400W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 174A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Leakage current: 10mA
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BZW04-376B BZW04-376B STMicroelectronics bzw04.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 3A; bidirectional; ±5%; DO15; 400W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.4kW
Kind of package: Ammo Pack
Max. forward impulse current: 3A
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HSP051-4M5 STMicroelectronics dm00259958.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Version: ESD
Application: HDMI; USB
Type of diode: TVS array
Mounting: SMD
Produkt ist nicht verfügbar
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HSP051-4M10 STMicroelectronics en.DM00089476.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8V; unidirectional; ESD; UQFN10; Ch: 4
Breakdown voltage: 5.8V
Version: ESD
Application: HDMI; USB
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: UQFN10
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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HSP053-4M5 STMicroelectronics hsp051-4m5.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8V; 3A; unidirectional; ESD; UQFN5; Ch: 4
Breakdown voltage: 5.8V
Max. forward impulse current: 3A
Version: ESD
Application: HDMI; USB
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 70nA
Case: UQFN5
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
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L6390D L6390D STMicroelectronics l6390.pdf Category: Drivers - integrated circuits
Description: IC: driver; push-pull; SO16; -0.43÷0.29A; 580V; Ch: 2; 800kHz
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO16
Output current: -0.43...0.29A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 800kHz
Kind of package: tube
Supply voltage: 12.5...20V
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L6390DTR STMicroelectronics en.CD00186965.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SO16; 430mA; Ch: 2; MOSFET; 800kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SO16
Output current: 0.43A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 800kHz
Supply voltage: 12.5...20V
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STTS22HTR STTS22HTR STMicroelectronics stts22h.pdf Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; uDFN6; SMD; Accur: ±1°C; 16bit
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...125°C
Case: uDFN6
Mounting: SMD
Interface: I2C; SMBus
Temperature measurement accuracy: ±1°C
Supply voltage: 1.5...3.6V
Kind of package: reel; tape
Converter resolution: 16bit
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SM6T18CAY SM6T18CAY STMicroelectronics SM6TxxY.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 24A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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STTH100W04CW STTH100W04CW STMicroelectronics stth100w04c.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 50A; Ifsm: 350A; TO247-3; tube; 35ns
Max. forward impulse current: 350A
Max. forward voltage: 0.98V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.4kV
Load current: 50A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
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STTH1002CT STTH1002CT STMicroelectronics en.CD00005113.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 50A; TO220AB; tube; Ir: 40uA
Max. forward impulse current: 50A
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Heatsink thickness: 1.23...1.32mm
Load current: 16A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 40µA
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: THT
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SM6T68CA SM6T68CA STMicroelectronics SM6T-st.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 68V; 6.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T68CAY SM6T68CAY STMicroelectronics SM6TxxY.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 68V; 6.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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STM32F103VBT6TR STM32F103VBT6TR STMicroelectronics STM32F103x8%2CB.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Interface: CAN; I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Clock frequency: 72MHz
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Kind of package: reel; tape
Number of 16bit timers: 4
Number of 12bit A/D converters: 16
Case: LQFP100
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
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TS4871ID TS4871ID STMicroelectronics ts4871.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; Ch: 2; Amp.class: AB; SO8; 8Ω
Type of integrated circuit: audio amplifier
Output power: 1W
Mounting: SMD
Number of channels: 2
Amplifier class: AB
Case: SO8
Impedance: 8Ω
Voltage supply range: 2.5...5.5V DC
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TS4871IST STMicroelectronics ts4871.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; Ch: 2; Amp.class: AB; miniSO8; 8Ω; 8mA
Type of integrated circuit: audio amplifier
Output power: 1W
Mounting: SMD
Number of channels: 2
Amplifier class: AB
Case: miniSO8
Impedance: 8Ω
Voltage supply range: 2.5...5.5V DC
Bandwidth: 2MHz
Operating temperature: -40...85°C
Quiescent current: 8mA
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SM6T33CA SM6T33CA STMicroelectronics SM6T.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T39A SM6T39A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T12A SM6T12A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 10.2V
Max. forward impulse current: 36A
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Breakdown voltage: 12V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
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SM6T33CAY SM6T33CAY STMicroelectronics SM6TxxY.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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SM6T30CA SM6T30CA STMicroelectronics SM6T.pdf description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T10CA SM6T10CA STMicroelectronics SM6T.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
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SM6T24A SM6T24A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
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SM6T22A SM6T22A STMicroelectronics SM6T.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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STM32H562IGT6 stm32h562ag.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 250MHz; LQFP176; 1MBFLASH
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 250MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Interface: I2C; IrDA; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M33
Memory: 1MB FLASH
Operating temperature: -40...85°C
Kind of core: 32-bit
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TS7221AILT TS7221.pdf
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2.7÷10V; SMT; SOT23-5; reel,tape
Input offset voltage: 10mV
Type of integrated circuit: comparator
Kind of output: open drain
Operating temperature: -40...85°C
Number of comparators: 1
Kind of package: reel; tape
Input offset current: 0.3nA
Case: SOT23-5
Operating voltage: 2.7...10V
Kind of comparator: low-power
Mounting: SMT
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STF2N80K5 STF2N80K5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; TO220FP
Case: TO220FP
Mounting: THT
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
On-state resistance: 3.5Ω
Gate charge: 3nC
Polarisation: unipolar
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M95020-WMN6TP m95010w.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: SPI
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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STW40N60M2 STW40N60M2-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 22A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TSZ121ILT tsz121.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 8uV
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.19V/μs
Integrated circuit features: micropower; rail-to-rail; zero-drift
Quiescent current: 40µA
Input offset voltage: 8µV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.6nA
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TSZ121IYLT tsz121.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 1; 1.8÷5.5VDC; SOT23-5; 8uV
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 0.19V/μs
Integrated circuit features: micropower; rail-to-rail; zero-drift
Quiescent current: 40µA
Input offset voltage: 8µV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.6nA
Application: automotive industry
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TSZ121ICT tsz121.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 1; 1.8÷5.5VDC; SC70-5; 8uV
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Slew rate: 0.19V/μs
Integrated circuit features: micropower; rail-to-rail; zero-drift
Quiescent current: 40µA
Input offset voltage: 8µV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.6nA
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TSZ121IYCT tsz121.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 400kHz; Ch: 2; 1.8÷5.5VDC; SC70-5
Type of integrated circuit: operational amplifier
Bandwidth: 400kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SC70-5
Operating temperature: -40...125°C
Slew rate: 0.17V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 1µV
Input bias current: 50pA
Input offset current: 0.1nA
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STM32L152R8T6 en.CD00277537.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Memory: 4kb EEPROM; 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L1
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; PWM; RTC; watchdog
Number of 16bit timers: 8
Number of 12bit A/D converters: 20
Kind of package: in-tray
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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STM32L152R8T6A en.DM00078689.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Memory: 4kb EEPROM; 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L1
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; PWM; RTC; watchdog
Number of 16bit timers: 8
Number of 12bit A/D converters: 20
Kind of package: in-tray
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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STM32L152R8T6TR en.CD00277537.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Memory: 4kb EEPROM; 32kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L1
Kind of core: 32-bit
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; LCD controller; PdR; PoR; PVD; PWM; RTC; watchdog
Number of 16bit timers: 8
Number of 12bit A/D converters: 20
Kind of package: reel; tape
Number of 12bit D/A converters: 2
Produkt ist nicht verfügbar
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M95512DFKW20I/90
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1.7÷5.5V; 5MHz; 5MHz; serial
Type of integrated circuit: EEPROM memory
Operating voltage: 1.7...5.5V
Clock frequency: 5MHz
Frequency: 5MHz
Kind of interface: serial
Operating temperature: -40...85°C
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L78L33ABD description L78L.pdf
Hersteller: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 0.1A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 5.3...20V
Produkt ist nicht verfügbar
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T3035H-8I t3035h-8i.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 30A; Igt: 35mA; TO220ABIns; tube; Ifsm: 283A
Mounting: THT
Max. forward impulse current: 283A
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 30A
Kind of package: tube
Case: TO220ABIns
Typ of triac: standard
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T3035H-6I T3035H,T3050H.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; Igt: 35mA; TO220ABIns; tube; Ifsm: 284A
Mounting: THT
Max. forward impulse current: 284A
Gate current: 35mA
Technology: Snubberless™
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.6kV
Max. load current: 30A
Kind of package: tube
Case: TO220ABIns
Typ of triac: standard
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T3035H-8G-TR t3035h-8g.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 30A; Igt: 35mA; D2PAK; reel,tape; Ifsm: 283A
Mounting: SMD
Max. forward impulse current: 283A
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.8kV
Max. load current: 30A
Kind of package: reel; tape
Case: D2PAK
Typ of triac: standard
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T3035H-6T en.CD00263568.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; Igt: 35mA; TO220AB; tube; Ifsm: 284A
Mounting: THT
Max. forward impulse current: 284A
Gate current: 35mA
Features of semiconductor devices: high temperature
Max. off-state voltage: 0.6kV
Max. load current: 30A
Kind of package: tube
Case: TO220AB
Typ of triac: standard
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T3035H-6G-TR en.CD00263568.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 35mA; Ifsm: 284A; high temperature
Mounting: SMD
Type of thyristor: triac
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: D2PAK
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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T3035H-8T t3035h-8t.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 30A; TO220AB; Igt: 35mA; Ifsm: 283A; high temperature
Mounting: THT
Type of thyristor: triac
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: TO220AB
Max. load current: 30A
Max. forward impulse current: 283A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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T3035H-6G en.CD00263568.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 30A; D2PAK; Igt: 35mA; Ifsm: 284A; high temperature
Mounting: SMD
Type of thyristor: triac
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: D2PAK
Max. load current: 30A
Max. forward impulse current: 284A
Max. off-state voltage: 0.6kV
Produkt ist nicht verfügbar
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T3035H-8G t3035h-8g.pdf
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 30A; D2PAK; Igt: 35mA; Ifsm: 283A; high temperature
Mounting: SMD
Type of thyristor: triac
Kind of package: tube
Features of semiconductor devices: high temperature
Gate current: 35mA
Case: D2PAK
Max. load current: 30A
Max. forward impulse current: 283A
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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SMCJ26A-TR SMCJ33CA-TR.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30.4V; 37A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
auf Bestellung 395 Stücke:
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SMBJ22A-TR SMBJ-st.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24.4÷25.7V; 83A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...25.7V
Max. forward impulse current: 83A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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STP26N65DM2 stp26n65dm2.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 12.6A; Idm: 53A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.6A
Pulsed drain current: 53A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 35.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STGW100H65FB2-4 stgw100h65fb2-4.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 91A; 441W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 91A
Power dissipation: 441W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 288nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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STM32L151RET6 STM32L151RET6.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M3
Memory: 80kB SRAM; 512kB FLASH
Family: STM32L1
Kind of core: 32-bit
Number of 12bit A/D converters: 21
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Number of 12bit D/A converters: 2
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STM32L151RET6TR en.DM00098321.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP64; 1.8÷3.6VDC; STM32L1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: I2C x2; I2S x2; SDIO; SPI x8; USART x5; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 16kB EEPROM; 80kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 21
Number of 12bit D/A converters: 2
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32L1
Kind of package: reel; tape
Kind of core: 32-bit
Produkt ist nicht verfügbar
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STD16NF06LT4 STD16NF06L.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±18V
On-state resistance: 85mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STD16NF06T4 STD16NF06T4.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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SMAJ15A-TR SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.7V; 16.4A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
auf Bestellung 8928 Stücke:
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SMAJ13A-TR description SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4V; 85A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4V
Max. forward impulse current: 85A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
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STEVAL-ILL053V2 STEVAL-ILL053V2.pdf
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: L6562A,L6599AT; 45÷55kHz; 48V
Kind of integrated circuit: LED driver
Operating voltage: 85...305V AC
Frequency: 45...55kHz
Type of development kit: evaluation
Components: L6562A; L6599AT
Kit contents: base board
Dimensions: 75x135x30mm
Connection: screw
Output voltage: 48V
Additional functions: PFC
Produkt ist nicht verfügbar
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L5150CJTR l5150cj.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PowerSSO12
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.6...40V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...150°C
Integrated circuit features: RESET output; watchdog
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: PowerSSO12
Number of channels: 1
Tolerance: ±2%
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L5150BNTR l5150bn.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.6...40V
Output current: 0.15A
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Tolerance: ±2%
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SMAJ13CA-TR description SMAJxxX_ser.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4V; 85A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Kind of package: reel; tape
Manufacturer series: SMAJ
Breakdown voltage: 14.4V
Max. forward impulse current: 85A
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Leakage current: 1µA
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BZW04-5V8B description bzw04.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.45V; 174A; bidirectional; ±5%; DO15; 400W; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 174A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Leakage current: 10mA
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BZW04-376B bzw04.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 3A; bidirectional; ±5%; DO15; 400W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 0.4kW
Kind of package: Ammo Pack
Max. forward impulse current: 3A
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HSP051-4M5 dm00259958.pdf
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; ESD
Version: ESD
Application: HDMI; USB
Type of diode: TVS array
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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HSP051-4M10 en.DM00089476.pdf
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8V; unidirectional; ESD; UQFN10; Ch: 4
Breakdown voltage: 5.8V
Version: ESD
Application: HDMI; USB
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: UQFN10
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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HSP053-4M5 hsp051-4m5.pdf
Hersteller: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8V; 3A; unidirectional; ESD; UQFN5; Ch: 4
Breakdown voltage: 5.8V
Max. forward impulse current: 3A
Version: ESD
Application: HDMI; USB
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 70nA
Case: UQFN5
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Produkt ist nicht verfügbar
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L6390D l6390.pdf
Hersteller: STMicroelectronics
Category: Drivers - integrated circuits
Description: IC: driver; push-pull; SO16; -0.43÷0.29A; 580V; Ch: 2; 800kHz
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO16
Output current: -0.43...0.29A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 800kHz
Kind of package: tube
Supply voltage: 12.5...20V
Produkt ist nicht verfügbar
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L6390DTR en.CD00186965.pdf
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SO16; 430mA; Ch: 2; MOSFET; 800kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SO16
Output current: 0.43A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 800kHz
Supply voltage: 12.5...20V
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Mindestbestellmenge: 2500 Stücke
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STTS22HTR stts22h.pdf
Hersteller: STMicroelectronics
Category: Temperature transducers
Description: IC: temperature sensor; -40÷125°C; uDFN6; SMD; Accur: ±1°C; 16bit
Type of integrated circuit: temperature sensor
Temperature measuring range: -40...125°C
Case: uDFN6
Mounting: SMD
Interface: I2C; SMBus
Temperature measurement accuracy: ±1°C
Supply voltage: 1.5...3.6V
Kind of package: reel; tape
Converter resolution: 16bit
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SM6T18CAY SM6TxxY.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 18V; 24A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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STTH100W04CW stth100w04c.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 50A; Ifsm: 350A; TO247-3; tube; 35ns
Max. forward impulse current: 350A
Max. forward voltage: 0.98V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.4kV
Load current: 50A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
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STTH1002CT en.CD00005113.pdf
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 50A; TO220AB; tube; Ir: 40uA
Max. forward impulse current: 50A
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 200V
Heatsink thickness: 1.23...1.32mm
Load current: 16A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 40µA
Case: TO220AB
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: THT
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SM6T68CA SM6T-st.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 68V; 6.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T68CAY SM6TxxY.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 68V; 6.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58.1V
Breakdown voltage: 68V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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STM32F103VBT6TR STM32F103x8%2CB.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Interface: CAN; I2C x2; SPI x2; USART x3; USB
Kind of architecture: Cortex M3
Clock frequency: 72MHz
Kind of core: 32-bit
Memory: 20kB SRAM; 128kB FLASH
Kind of package: reel; tape
Number of 16bit timers: 4
Number of 12bit A/D converters: 16
Case: LQFP100
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Produkt ist nicht verfügbar
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TS4871ID ts4871.pdf
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; Ch: 2; Amp.class: AB; SO8; 8Ω
Type of integrated circuit: audio amplifier
Output power: 1W
Mounting: SMD
Number of channels: 2
Amplifier class: AB
Case: SO8
Impedance: 8Ω
Voltage supply range: 2.5...5.5V DC
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TS4871IST ts4871.pdf
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; Ch: 2; Amp.class: AB; miniSO8; 8Ω; 8mA
Type of integrated circuit: audio amplifier
Output power: 1W
Mounting: SMD
Number of channels: 2
Amplifier class: AB
Case: miniSO8
Impedance: 8Ω
Voltage supply range: 2.5...5.5V DC
Bandwidth: 2MHz
Operating temperature: -40...85°C
Quiescent current: 8mA
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SM6T33CA SM6T.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T39A SM6T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T12A SM6T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; reel,tape
Max. off-state voltage: 10.2V
Max. forward impulse current: 36A
Case: SMB
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Breakdown voltage: 12V
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
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SM6T33CAY SM6TxxY.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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SM6T30CA description SM6T.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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SM6T10CA SM6T.pdf
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 41A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
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SM6T24A SM6T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 18A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 18A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
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SM6T22A SM6T.pdf
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 22V; 20A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18.8V
Breakdown voltage: 22V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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