Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (170334) > Seite 2759 nach 2839
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LD39200PU33R | STMicroelectronics |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2% Operating temperature: -40...125°C Case: DFN8 Tolerance: ±2% Output voltage: 3.3V Output current: 2A Voltage drop: 0.25V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 1.25...6V Kind of package: reel; tape Manufacturer series: LD39200 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD |
Produkt ist nicht verfügbar |
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LM258QT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: DFN8 Slew rate: 0.6V/μs Operating temperature: -40...105°C Input offset voltage: 7mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2904Q2T | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Operating voltage: 3...30V Mounting: SMT Number of channels: 2 Case: DFN8 Slew rate: 0.6V/μs Operating temperature: -40...125°C Input offset voltage: 9mV Integrated circuit features: low power Kind of package: reel; tape Input bias current: 0.2µA Input offset current: 40nA |
Produkt ist nicht verfügbar |
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LM193QT | STMicroelectronics |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: DFN8 Operating temperature: -55...125°C Input offset voltage: 9mV Kind of package: reel; tape Kind of output: open collector Input offset current: 150nA Input bias current: 0.4µA |
Produkt ist nicht verfügbar |
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| LM2903Q2T | STMicroelectronics |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2 Delay time: 500ns Kind of output: open collector Kind of package: reel; tape Kind of comparator: low-power Input offset current: 150nA Input bias current: 0.4µA Mounting: SMT Operating temperature: -40...125°C Case: DFN8 2x2 Operating voltage: 2...36V Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 15mV |
Produkt ist nicht verfügbar |
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LM393QT | STMicroelectronics |
Category: SMD comparators Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA Type of integrated circuit: comparator Number of comparators: 2 Input offset voltage: 9mV Kind of output: open collector Kind of package: reel; tape Kind of comparator: low-power Input offset current: 150nA Mounting: SMT Operating temperature: 0...70°C Case: DFN8 Operating voltage: 2...36V |
auf Bestellung 1835 Stücke: Lieferzeit 14-21 Tag (e) |
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STWD100NYWY3F | STMicroelectronics |
Category: Watchdog and reset circuits Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5 Type of integrated circuit: peripheral circuit Kind of integrated circuit: timer Kind of RESET output: open drain Active logical level: low Supply voltage: 2.7...5.5V DC Case: SOT23-5 Operating temperature: -40...85°C Mounting: SMD Integrated circuit features: watchdog DC supply current: 13µA |
auf Bestellung 15225 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32H745I-DISCO | STMicroelectronics |
Category: STM development kits Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4 Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG Kind of architecture: Cortex M7 Kit contents: base board; TFT display Programmers and development kits features: integrated programmer/debugger Type of development kit: STM32 Components: LCD display; STLINK-V3E; STM32H745XIH6 Number of add-on connectors: 4 Application: for devices with displays Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32H750B-DK | STMicroelectronics |
Category: STM development kits Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4 Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG Kind of architecture: Cortex M7 Kit contents: base board; TFT display Type of development kit: STM32 Components: LCD display; STLINK-V3E; STM32H750XBH6 Number of add-on connectors: 4 Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB Application: for devices with displays Programmers and development kits features: integrated programmer/debugger |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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L293B | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: DIP16 Mounting: THT Supply voltage: 4.5...36V Kind of package: tube Output current: 1A Topology: push-pull Number of channels: 4 |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 1885 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH12R06G | STMicroelectronics |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: D2PAK Max. forward voltage: 1.4V Reverse recovery time: 25ns |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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SMP100LC-25 | STMicroelectronics |
Category: Thyristors - others Description: Thyristor: TSS; Urmax: 25V; SMB; SMD; reel,tape; 100A; bidirectional Mounting: SMD Manufacturer series: LC Max. off-state voltage: 25V Semiconductor structure: bidirectional Max. forward impulse current: 100A Application: telecommunication Kind of package: reel; tape Technology: Trisil™ Breakover voltage: 35V Type of thyristor: TSS Case: SMB |
auf Bestellung 3016 Stücke: Lieferzeit 14-21 Tag (e) |
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STGP7NC60HD | STMicroelectronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 14A; 80W; TO220AB Case: TO220AB Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 14A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 80W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 48nC Mounting: THT |
auf Bestellung 373 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH60W03CW | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns Semiconductor structure: common cathode; double Max. off-state voltage: 300V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.94V Max. forward impulse current: 280A Reverse recovery time: 25ns Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SM6T27CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape Case: SMB Tolerance: ±5% Max. off-state voltage: 23.1V Semiconductor structure: bidirectional Max. forward impulse current: 16A Breakdown voltage: 27V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Mounting: SMD |
auf Bestellung 6089 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F072RBT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; I2C x2; SPI x2; UART x4; USB Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 16bit timers: 8 Number of 32bit timers: 1 Family: STM32F0 |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
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STP3NK90ZFP | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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SM6T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 14082 Stücke: Lieferzeit 14-21 Tag (e) |
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STN3NF06L | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 5214 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS0520Z | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Case: SOD123 Max. off-state voltage: 20V Max. load current: 2A Max. forward voltage: 0.32V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD |
auf Bestellung 7313 Stücke: Lieferzeit 14-21 Tag (e) |
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STTH6002CW | STMicroelectronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns Semiconductor structure: common cathode; double Max. off-state voltage: 200V Load current: 30A x2 Case: TO247-3 Max. forward voltage: 0.75V Max. forward impulse current: 330A Max. load current: 50A Reverse recovery time: 22ns Type of diode: rectifying Kind of package: tube Mounting: THT Features of semiconductor devices: ultrafast switching |
auf Bestellung 160 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ6.0A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7.05V; 61A; unidirectional; SMB; reel,tape Mounting: SMD Max. off-state voltage: 6V Semiconductor structure: unidirectional Max. forward impulse current: 61A Breakdown voltage: 7.05V Leakage current: 50µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Case: SMB |
auf Bestellung 2505 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS20H100CG | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube Mounting: SMD Case: D2PAK Kind of package: tube Max. forward impulse current: 250A Semiconductor structure: common cathode; double Load current: 10A x2 Max. forward voltage: 0.59V Max. load current: 30A Type of diode: Schottky rectifying Max. off-state voltage: 100V |
auf Bestellung 1239 Stücke: Lieferzeit 14-21 Tag (e) |
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STW8NK80Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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STW4N150 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247 Drain-source voltage: 1.5kV Drain current: 2.5A On-state resistance: 7Ω Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube Technology: PowerMesh™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO247 |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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ST490ABDR | STMicroelectronics |
Category: RS232 / RS422 / RS485 - integr. circ. Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8 Case: SO8 Supply voltage: 4.5...5.5V DC Type of integrated circuit: interface Interface: half duplex; RS422; RS485 Data transfer rate: 25Mbps Number of receivers: 1 Number of transmitters: 1 Kind of integrated circuit: transceiver Mounting: SMD |
auf Bestellung 3630 Stücke: Lieferzeit 14-21 Tag (e) |
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STE48NM50 | STMicroelectronics |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W Drain-source voltage: 500V Drain current: 30A On-state resistance: 80mΩ Power dissipation: 450W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Gate-source voltage: ±30V Pulsed drain current: 192A Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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STN4NF20L | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 200V Drain current: 1A Power dissipation: 3.3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1131 Stücke: Lieferzeit 14-21 Tag (e) |
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STP40NF20 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3 Technology: STripFET™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Drain-source voltage: 200V Drain current: 25A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 160W Polarisation: unipolar Kind of package: tube |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS140A | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.43V Max. load current: 7A Max. forward impulse current: 60A Kind of package: reel; tape |
auf Bestellung 15786 Stücke: Lieferzeit 14-21 Tag (e) |
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STW45NM60 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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STB42N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
Produkt ist nicht verfügbar |
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STP40NF10L | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3 Technology: STripFET™ Gate-source voltage: ±17V Kind of channel: enhancement Mounting: THT Case: TO220-3 Drain-source voltage: 100V Drain current: 25A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Kind of package: tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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STP42N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ V |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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STW42N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ V |
Produkt ist nicht verfügbar |
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STW45N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 210W Version: ESD Gate-source voltage: ±20V Drain current: 22A |
Produkt ist nicht verfügbar |
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STW48NM60N | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ48A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 8.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 2334 Stücke: Lieferzeit 14-21 Tag (e) |
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ST1S40IPHR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuits Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8 Type of integrated circuit: driver Kind of integrated circuit: DC/DC converter Case: HSOP8 Mounting: SMD Topology: buck Number of channels: 1 Input voltage: 4...18V DC Frequency: 850kHz Output voltage: 0.8...18V DC Output current: 3A |
auf Bestellung 1896 Stücke: Lieferzeit 14-21 Tag (e) |
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STD4NK80ZT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 80W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2478 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP14N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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STP45N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Drain current: 19A Power dissipation: 210W |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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SMCJ40CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40V Breakdown voltage: 46.7V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1308 Stücke: Lieferzeit 14-21 Tag (e) |
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STE145N65M5 | STMicroelectronics |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W Drain-source voltage: 650V Drain current: 90A On-state resistance: 12mΩ Power dissipation: 679W Polarisation: unipolar Case: ISOTOP Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Gate-source voltage: ±25V Pulsed drain current: 572A Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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STGW40V60DF | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 80A Power dissipation: 283W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS0540Z | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 0.4V Max. load current: 2A Max. forward impulse current: 5.5A Kind of package: reel; tape |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS1L40A | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.37V Max. load current: 8A Max. forward impulse current: 60A Kind of package: reel; tape |
auf Bestellung 17656 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS40150CG | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube Max. load current: 40A Max. forward voltage: 0.92V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Mounting: SMD Case: D2PAK Max. off-state voltage: 150V |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS40150CT | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V Max. forward voltage: 0.69V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 250A Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AB Max. off-state voltage: 150V |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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STY145N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Case: MAX247 On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 625W Version: ESD Gate-source voltage: ±25V Drain current: 87A |
Produkt ist nicht verfügbar |
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SMAJ24CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 46A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 4189 Stücke: Lieferzeit 14-21 Tag (e) |
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STP45N60DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Case: TO220-3 On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 136A Drain current: 21A Power dissipation: 250W Gate-source voltage: ±25V |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS1545CT | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V Max. off-state voltage: 45V Max. load current: 20A Max. forward voltage: 0.5V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 150A Kind of package: tube Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AB |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS1545FP | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V Max. off-state voltage: 45V Max. load current: 30A Max. forward voltage: 0.57V Load current: 15A Semiconductor structure: single diode Max. forward impulse current: 200A Kind of package: tube Type of diode: Schottky rectifying Mounting: THT Case: TO220FP-2 |
auf Bestellung 247 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS24045TV | STMicroelectronics |
Category: Diode modules Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw Max. forward impulse current: 1.15kA Max. off-state voltage: 45V Case: ISOTOP Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Max. load current: 240A Max. forward voltage: 0.68V Load current: 120A x2 Semiconductor structure: double independent |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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STPS41H100CG | STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 40A Max. forward impulse current: 220A Kind of package: tube |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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STW45N60DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Case: TO247 On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: 21A Power dissipation: 250W Gate-source voltage: ±25V |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| STGIPS14K60 | STMicroelectronics |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6 Mounting: THT Collector-emitter voltage: 600V Frequency: 20kHz Operating voltage: 13.5...18/0...400V DC Case: SDIP-25L Output current: 14A Type of integrated circuit: driver Number of channels: 6 Power dissipation: 42W Technology: SLLIMM™ Kind of integrated circuit: 3-phase motor controller; IPM Operating temperature: -40...125°C Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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STM32F417VGT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB Clock frequency: 168MHz Kind of architecture: Cortex M4 Family: STM32F4 Memory: 192kB SRAM; 1MB FLASH Mounting: SMD Operating temperature: -40...85°C Case: LQFP100 Supply voltage: 1.8...3.6V DC Type of integrated circuit: STM32 ARM microcontroller |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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| LD39200PU33R |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Operating temperature: -40...125°C
Case: DFN8
Tolerance: ±2%
Output voltage: 3.3V
Output current: 2A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.25...6V
Kind of package: reel; tape
Manufacturer series: LD39200
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 2A; DFN8; SMD; ±2%
Operating temperature: -40...125°C
Case: DFN8
Tolerance: ±2%
Output voltage: 3.3V
Output current: 2A
Voltage drop: 0.25V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 1.25...6V
Kind of package: reel; tape
Manufacturer series: LD39200
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM258QT |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Input offset voltage: 7mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.30 EUR |
| 341+ | 0.21 EUR |
| 379+ | 0.19 EUR |
| 516+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| LM2904Q2T |
|
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; 3÷30V; Ch: 2; DFN8; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Operating voltage: 3...30V
Mounting: SMT
Number of channels: 2
Case: DFN8
Slew rate: 0.6V/μs
Operating temperature: -40...125°C
Input offset voltage: 9mV
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 40nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM193QT |
|
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: DFN8
Operating temperature: -55...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.4µA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: DFN8
Operating temperature: -55...125°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Input bias current: 0.4µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2903Q2T |
|
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2
Delay time: 500ns
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Input bias current: 0.4µA
Mounting: SMT
Operating temperature: -40...125°C
Case: DFN8 2x2
Operating voltage: 2...36V
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 500ns; 2÷36V; SMT; DFN8 2x2
Delay time: 500ns
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Input bias current: 0.4µA
Mounting: SMT
Operating temperature: -40...125°C
Case: DFN8 2x2
Operating voltage: 2...36V
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 15mV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM393QT |
|
Hersteller: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Mounting: SMT
Operating temperature: 0...70°C
Case: DFN8
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; DFN8; reel,tape; 150nA
Type of integrated circuit: comparator
Number of comparators: 2
Input offset voltage: 9mV
Kind of output: open collector
Kind of package: reel; tape
Kind of comparator: low-power
Input offset current: 150nA
Mounting: SMT
Operating temperature: 0...70°C
Case: DFN8
Operating voltage: 2...36V
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.20 EUR |
| 382+ | 0.19 EUR |
| 410+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| STWD100NYWY3F |
|
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...85°C
Mounting: SMD
Integrated circuit features: watchdog
DC supply current: 13µA
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...85°C
Mounting: SMD
Integrated circuit features: watchdog
DC supply current: 13µA
auf Bestellung 15225 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 89+ | 0.81 EUR |
| 94+ | 0.77 EUR |
| 99+ | 0.72 EUR |
| 102+ | 0.70 EUR |
| 250+ | 0.69 EUR |
| STM32H745I-DISCO |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M7
Kit contents: base board; TFT display
Programmers and development kits features: integrated programmer/debugger
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H745XIH6
Number of add-on connectors: 4
Application: for devices with displays
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M7
Kit contents: base board; TFT display
Programmers and development kits features: integrated programmer/debugger
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H745XIH6
Number of add-on connectors: 4
Application: for devices with displays
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 158.76 EUR |
| STM32H750B-DK |
|
Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M7
Kit contents: base board; TFT display
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H750XBH6
Number of add-on connectors: 4
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Application: for devices with displays
Programmers and development kits features: integrated programmer/debugger
Category: STM development kits
Description: Dev.kit: STM32; base board,TFT display; Add-on connectors: 4
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; MDIO; MMC; QSPI; SAI; SD; SDIO; SPDIF; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M7
Kit contents: base board; TFT display
Type of development kit: STM32
Components: LCD display; STLINK-V3E; STM32H750XBH6
Number of add-on connectors: 4
Kind of connector: Jack 3,5mm x2; pin strips; RJ45; STMod+ socket; USB micro AB
Application: for devices with displays
Programmers and development kits features: integrated programmer/debugger
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 157.59 EUR |
| 3+ | 152.81 EUR |
| L293B |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: DIP16
Mounting: THT
Supply voltage: 4.5...36V
Kind of package: tube
Output current: 1A
Topology: push-pull
Number of channels: 4
Category: Motor and PWM drivers
Description: IC: driver; push-pull; motor controller; DIP16; 1A; Ch: 4; 4.5÷36V
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: DIP16
Mounting: THT
Supply voltage: 4.5...36V
Kind of package: tube
Output current: 1A
Topology: push-pull
Number of channels: 4
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.94 EUR |
| 18+ | 4.02 EUR |
| 19+ | 3.79 EUR |
| STD3NK80ZT4 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 1885 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.30 EUR |
| 42+ | 1.72 EUR |
| 113+ | 0.63 EUR |
| 120+ | 0.60 EUR |
| STTH12R06G |
|
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 12A; 25ns; D2PAK; Ufmax: 1.4V; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: D2PAK
Max. forward voltage: 1.4V
Reverse recovery time: 25ns
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 57+ | 1.27 EUR |
| 73+ | 0.98 EUR |
| 77+ | 0.93 EUR |
| SMP100LC-25 |
|
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 25V; SMB; SMD; reel,tape; 100A; bidirectional
Mounting: SMD
Manufacturer series: LC
Max. off-state voltage: 25V
Semiconductor structure: bidirectional
Max. forward impulse current: 100A
Application: telecommunication
Kind of package: reel; tape
Technology: Trisil™
Breakover voltage: 35V
Type of thyristor: TSS
Case: SMB
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 25V; SMB; SMD; reel,tape; 100A; bidirectional
Mounting: SMD
Manufacturer series: LC
Max. off-state voltage: 25V
Semiconductor structure: bidirectional
Max. forward impulse current: 100A
Application: telecommunication
Kind of package: reel; tape
Technology: Trisil™
Breakover voltage: 35V
Type of thyristor: TSS
Case: SMB
auf Bestellung 3016 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 50+ | 1.45 EUR |
| 57+ | 1.27 EUR |
| 63+ | 1.14 EUR |
| 108+ | 0.66 EUR |
| 115+ | 0.63 EUR |
| STGP7NC60HD | |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Case: TO220AB
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 14A; 80W; TO220AB
Case: TO220AB
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 14A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 80W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
auf Bestellung 373 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.93 EUR |
| 45+ | 1.60 EUR |
| 65+ | 1.12 EUR |
| 68+ | 1.06 EUR |
| STTH60W03CW |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 280A; TO247-3; 25ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 300V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.94V
Max. forward impulse current: 280A
Reverse recovery time: 25ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.50 EUR |
| SM6T27CA |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 23.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 16A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 27V; 16A; bidirectional; ±5%; SMB; reel,tape
Case: SMB
Tolerance: ±5%
Max. off-state voltage: 23.1V
Semiconductor structure: bidirectional
Max. forward impulse current: 16A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Mounting: SMD
auf Bestellung 6089 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.60 EUR |
| 180+ | 0.40 EUR |
| 224+ | 0.32 EUR |
| 249+ | 0.29 EUR |
| 633+ | 0.11 EUR |
| STM32F072RBT6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 16bit timers: 8
Number of 32bit timers: 1
Family: STM32F0
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.12 EUR |
| STP3NK90ZFP |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SM6T30A |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 14082 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.40 EUR |
| 229+ | 0.31 EUR |
| 252+ | 0.28 EUR |
| 264+ | 0.27 EUR |
| 582+ | 0.12 EUR |
| STN3NF06L |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; 3.3W; SOT223; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 5214 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 98+ | 0.73 EUR |
| 115+ | 0.62 EUR |
| 234+ | 0.31 EUR |
| 247+ | 0.29 EUR |
| STPS0520Z |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Case: SOD123
Max. off-state voltage: 20V
Max. load current: 2A
Max. forward voltage: 0.32V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
auf Bestellung 7313 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.30 EUR |
| 371+ | 0.19 EUR |
| 529+ | 0.14 EUR |
| 619+ | 0.12 EUR |
| 1583+ | 0.05 EUR |
| 1673+ | 0.04 EUR |
| STTH6002CW | |
|
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.75V
Max. forward impulse current: 330A
Max. load current: 50A
Reverse recovery time: 22ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TO247-3; 22ns
Semiconductor structure: common cathode; double
Max. off-state voltage: 200V
Load current: 30A x2
Case: TO247-3
Max. forward voltage: 0.75V
Max. forward impulse current: 330A
Max. load current: 50A
Reverse recovery time: 22ns
Type of diode: rectifying
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.28 EUR |
| 18+ | 4.03 EUR |
| 19+ | 3.80 EUR |
| 90+ | 3.66 EUR |
| SMBJ6.0A-TR |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.05V; 61A; unidirectional; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: unidirectional
Max. forward impulse current: 61A
Breakdown voltage: 7.05V
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.05V; 61A; unidirectional; SMB; reel,tape
Mounting: SMD
Max. off-state voltage: 6V
Semiconductor structure: unidirectional
Max. forward impulse current: 61A
Breakdown voltage: 7.05V
Leakage current: 50µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Case: SMB
auf Bestellung 2505 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 205+ | 0.35 EUR |
| 288+ | 0.25 EUR |
| 336+ | 0.21 EUR |
| 625+ | 0.11 EUR |
| STPS20H100CG |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 250A
Semiconductor structure: common cathode; double
Load current: 10A x2
Max. forward voltage: 0.59V
Max. load current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; tube
Mounting: SMD
Case: D2PAK
Kind of package: tube
Max. forward impulse current: 250A
Semiconductor structure: common cathode; double
Load current: 10A x2
Max. forward voltage: 0.59V
Max. load current: 30A
Type of diode: Schottky rectifying
Max. off-state voltage: 100V
auf Bestellung 1239 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 60+ | 1.20 EUR |
| 80+ | 0.90 EUR |
| 85+ | 0.85 EUR |
| 500+ | 0.82 EUR |
| STW8NK80Z |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW4N150 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 160W; TO247
Drain-source voltage: 1.5kV
Drain current: 2.5A
On-state resistance: 7Ω
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Technology: PowerMesh™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO247
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.35 EUR |
| 12+ | 6.13 EUR |
| 25+ | 5.91 EUR |
| ST490ABDR |
|
Hersteller: STMicroelectronics
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8
Case: SO8
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: half duplex; RS422; RS485
Data transfer rate: 25Mbps
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Mounting: SMD
Category: RS232 / RS422 / RS485 - integr. circ.
Description: IC: interface; transceiver; half duplex,RS422,RS485; 25Mbps; SO8
Case: SO8
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: interface
Interface: half duplex; RS422; RS485
Data transfer rate: 25Mbps
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Mounting: SMD
auf Bestellung 3630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.30 EUR |
| 43+ | 1.70 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.80 EUR |
| STE48NM50 |
|
Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 80mΩ
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Pulsed drain current: 192A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 30A; ISOTOP; screw; Idm: 192A; 450W
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 80mΩ
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±30V
Pulsed drain current: 192A
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STN4NF20L |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 1A; 3.3W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 1A
Power dissipation: 3.3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1131 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 127+ | 0.56 EUR |
| 212+ | 0.34 EUR |
| 225+ | 0.32 EUR |
| 1000+ | 0.31 EUR |
| STP40NF20 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 25A; 160W; TO220-3
Technology: STripFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 200V
Drain current: 25A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Power dissipation: 160W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.65 EUR |
| 18+ | 4.19 EUR |
| 23+ | 3.20 EUR |
| 24+ | 3.03 EUR |
| STPS140A |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.43V
Max. load current: 7A
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.43V
Max. load current: 7A
Max. forward impulse current: 60A
Kind of package: reel; tape
auf Bestellung 15786 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.40 EUR |
| 265+ | 0.27 EUR |
| 338+ | 0.21 EUR |
| 410+ | 0.17 EUR |
| 494+ | 0.14 EUR |
| 848+ | 0.08 EUR |
| 897+ | 0.08 EUR |
| 2500+ | 0.08 EUR |
| STW45NM60 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; 417W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.87 EUR |
| 10+ | 7.38 EUR |
| 11+ | 6.96 EUR |
| STB42N65M5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.8A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP40NF10L |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Technology: STripFET™
Gate-source voltage: ±17V
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 25A; 150W; TO220-3
Technology: STripFET™
Gate-source voltage: ±17V
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Drain-source voltage: 100V
Drain current: 25A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 3.17 EUR |
| 33+ | 2.17 EUR |
| 34+ | 2.10 EUR |
| STP42N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ V
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.62 EUR |
| 7+ | 10.61 EUR |
| STW42N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW45N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO247
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 210W
Version: ESD
Gate-source voltage: ±20V
Drain current: 22A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW48NM60N |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| SMBJ48A-TR |
|
Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 56.1V; 8.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 8.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 2334 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 180+ | 0.40 EUR |
| 225+ | 0.32 EUR |
| 250+ | 0.29 EUR |
| 658+ | 0.11 EUR |
| 695+ | 0.10 EUR |
| ST1S40IPHR |
|
Hersteller: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Case: HSOP8
Mounting: SMD
Topology: buck
Number of channels: 1
Input voltage: 4...18V DC
Frequency: 850kHz
Output voltage: 0.8...18V DC
Output current: 3A
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4÷18VDC; Uout: 0.8÷18VDC; 3A; HSOP8
Type of integrated circuit: driver
Kind of integrated circuit: DC/DC converter
Case: HSOP8
Mounting: SMD
Topology: buck
Number of channels: 1
Input voltage: 4...18V DC
Frequency: 850kHz
Output voltage: 0.8...18V DC
Output current: 3A
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.45 EUR |
| 22+ | 3.30 EUR |
| 33+ | 2.22 EUR |
| 35+ | 2.09 EUR |
| STD4NK80ZT4 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 80W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.27 EUR |
| 48+ | 1.52 EUR |
| 107+ | 0.67 EUR |
| 112+ | 0.64 EUR |
| STP14N80K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STP45N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Drain current: 19A
Power dissipation: 210W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Drain current: 19A
Power dissipation: 210W
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.59 EUR |
| 13+ | 5.59 EUR |
| SMCJ40CA-TR |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 46.7V; 24A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40V
Breakdown voltage: 46.7V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1308 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 96+ | 0.75 EUR |
| 106+ | 0.67 EUR |
| 229+ | 0.31 EUR |
| 242+ | 0.30 EUR |
| STE145N65M5 |
|
Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Drain-source voltage: 650V
Drain current: 90A
On-state resistance: 12mΩ
Power dissipation: 679W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±25V
Pulsed drain current: 572A
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Drain-source voltage: 650V
Drain current: 90A
On-state resistance: 12mΩ
Power dissipation: 679W
Polarisation: unipolar
Case: ISOTOP
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Gate-source voltage: ±25V
Pulsed drain current: 572A
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STGW40V60DF |
|
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 80A; 283W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 80A
Power dissipation: 283W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 5.49 EUR |
| 26+ | 2.77 EUR |
| 28+ | 2.62 EUR |
| 120+ | 2.52 EUR |
| STPS0540Z |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 0.4V
Max. load current: 2A
Max. forward impulse current: 5.5A
Kind of package: reel; tape
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.30 EUR |
| 348+ | 0.21 EUR |
| 413+ | 0.17 EUR |
| 479+ | 0.15 EUR |
| 558+ | 0.13 EUR |
| 1241+ | 0.06 EUR |
| 1313+ | 0.05 EUR |
| STPS1L40A |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.37V
Max. load current: 8A
Max. forward impulse current: 60A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.37V
Max. load current: 8A
Max. forward impulse current: 60A
Kind of package: reel; tape
auf Bestellung 17656 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 317+ | 0.23 EUR |
| 483+ | 0.15 EUR |
| 879+ | 0.08 EUR |
| 930+ | 0.08 EUR |
| 5000+ | 0.07 EUR |
| STPS40150CG |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Max. load current: 40A
Max. forward voltage: 0.92V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 150V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 150V; 20Ax2; tube
Max. load current: 40A
Max. forward voltage: 0.92V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 150V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.49 EUR |
| 23+ | 3.16 EUR |
| 30+ | 2.42 EUR |
| 32+ | 2.29 EUR |
| STPS40150CT |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Max. forward voltage: 0.69V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 150V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20Ax2; TO220AB; Ufmax: 0.69V
Max. forward voltage: 0.69V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Max. off-state voltage: 150V
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 33+ | 2.20 EUR |
| 37+ | 1.94 EUR |
| 43+ | 1.67 EUR |
| 46+ | 1.58 EUR |
| STY145N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: MAX247
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 625W
Version: ESD
Gate-source voltage: ±25V
Drain current: 87A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Case: MAX247
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 625W
Version: ESD
Gate-source voltage: ±25V
Drain current: 87A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ24CA-TR |
|
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.7V; 46A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 46A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 4189 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 150+ | 0.48 EUR |
| 185+ | 0.39 EUR |
| 205+ | 0.35 EUR |
| 658+ | 0.11 EUR |
| 695+ | 0.10 EUR |
| STP45N60DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 136A
Drain current: 21A
Power dissipation: 250W
Gate-source voltage: ±25V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO220-3
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 136A
Drain current: 21A
Power dissipation: 250W
Gate-source voltage: ±25V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| STPS1545CT |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 20A
Max. forward voltage: 0.5V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5Ax2; TO220AB; Ufmax: 0.5V
Max. off-state voltage: 45V
Max. load current: 20A
Max. forward voltage: 0.5V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 150A
Kind of package: tube
Type of diode: Schottky rectifying
Heatsink thickness: 1.23...1.32mm
Mounting: THT
Case: TO220AB
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 86+ | 0.84 EUR |
| 182+ | 0.39 EUR |
| 193+ | 0.37 EUR |
| STPS1545FP |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.57V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220FP-2; Ufmax: 0.57V
Max. off-state voltage: 45V
Max. load current: 30A
Max. forward voltage: 0.57V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220FP-2
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 85+ | 0.85 EUR |
| 122+ | 0.59 EUR |
| 129+ | 0.56 EUR |
| STPS24045TV |
|
Hersteller: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Max. forward impulse current: 1.15kA
Max. off-state voltage: 45V
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. load current: 240A
Max. forward voltage: 0.68V
Load current: 120A x2
Semiconductor structure: double independent
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; ISOTOP; screw
Max. forward impulse current: 1.15kA
Max. off-state voltage: 45V
Case: ISOTOP
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Max. load current: 240A
Max. forward voltage: 0.68V
Load current: 120A x2
Semiconductor structure: double independent
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STPS41H100CG |
|
Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 40A
Max. forward impulse current: 220A
Kind of package: tube
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.56 EUR |
| STW45N60DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 21A
Power dissipation: 250W
Gate-source voltage: ±25V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Case: TO247
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 21A
Power dissipation: 250W
Gate-source voltage: ±25V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.78 EUR |
| 12+ | 6.19 EUR |
| 13+ | 5.86 EUR |
| STGIPS14K60 |
|
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6
Mounting: THT
Collector-emitter voltage: 600V
Frequency: 20kHz
Operating voltage: 13.5...18/0...400V DC
Case: SDIP-25L
Output current: 14A
Type of integrated circuit: driver
Number of channels: 6
Power dissipation: 42W
Technology: SLLIMM™
Kind of integrated circuit: 3-phase motor controller; IPM
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; SLLIMM™; SDIP-25L; 14A; Ch: 6
Mounting: THT
Collector-emitter voltage: 600V
Frequency: 20kHz
Operating voltage: 13.5...18/0...400V DC
Case: SDIP-25L
Output current: 14A
Type of integrated circuit: driver
Number of channels: 6
Power dissipation: 42W
Technology: SLLIMM™
Kind of integrated circuit: 3-phase motor controller; IPM
Operating temperature: -40...125°C
Topology: IGBT three-phase bridge
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Im Einkaufswagen
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| STM32F417VGT6 |
|
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Clock frequency: 168MHz
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 192kB SRAM; 1MB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP100; 1.8÷3.6VDC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Clock frequency: 168MHz
Kind of architecture: Cortex M4
Family: STM32F4
Memory: 192kB SRAM; 1MB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Type of integrated circuit: STM32 ARM microcontroller
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 16.83 EUR |