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STPS30M80CG-TR STPS30M80CG-TR STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS30SM80CG-TR STPS30SM80CG-TR STMicroelectronics en.DM00026458.pdf Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
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STPS40SM80CG-TR STPS40SM80CG-TR STMicroelectronics STPS40SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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TN1205H-6G-TR TN1205H-6G-TR STMicroelectronics en.DM00022970.pdf Description: SCR 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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MD2009DFP MD2009DFP STMicroelectronics MD2009DFP.pdf Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
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STB155N3H6 STB155N3H6 STMicroelectronics en.DM00028021.pdf Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
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STF18N55M5 STF18N55M5 STMicroelectronics STB_D_F_P18N55M5_Rev_3.pdf Description: MOSFET N-CH 550V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
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STFW60N65M5 STFW60N65M5 STMicroelectronics en.CD00291091.pdf Description: MOSFET N-CH 650V 46A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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STI12N65M5 STI12N65M5 STMicroelectronics en.CD00226268.pdf Description: MOSFET N-CH 650V 8.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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STI16N65M5 STI16N65M5 STMicroelectronics STx16N65M5_Oct2011.pdf Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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STI21N65M5 STI21N65M5 STMicroelectronics stp21n65m5.pdf Description: MOSFET N-CH 650V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
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STI260N6F6 STI260N6F6 STMicroelectronics en.CD00272622.pdf Description: MOSFET N-CH 75V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
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STI30N65M5 STI30N65M5 STMicroelectronics en.CD00223067.pdf Description: MOSFET N-CH 650V 22A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
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STI32N65M5 STI32N65M5 STMicroelectronics en.CD00222634.pdf Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
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STI35N65M5 STI35N65M5 STMicroelectronics en.CD00222927.pdf Description: MOSFET N-CH 650V 27A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
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STI8N65M5 STI8N65M5 STMicroelectronics en.CD00253250.pdf Description: MOSFET N-CH 650V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
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STP210N75F6 STP210N75F6 STMicroelectronics STP210N75F6.pdf Description: MOSFET N-CH 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
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STP34NM60ND STP34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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STP75N3LLH6 STP75N3LLH6 STMicroelectronics STD%2CSTP%2CSTU75N3LLH6%28-S%29.pdf Description: MOSFET N-CH 30V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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STP7NM60N STP7NM60N STMicroelectronics en.CD00252114.pdf Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
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STPS10M80CFP STPS10M80CFP STMicroelectronics STPS10M80C.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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STPS10M80CR STPS10M80CR STMicroelectronics STPS10M80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS10M80CT STPS10M80CT STMicroelectronics STPS10M80C.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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STPS10SM80CFP STPS10SM80CFP STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE ARR SCHOTT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS10SM80CR STPS10SM80CR STMicroelectronics Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS10SM80CT STPS10SM80CT STMicroelectronics Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS15M80CFP STPS15M80CFP STMicroelectronics STPS15M80C.pdf Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
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STPS15M80CR STPS15M80CR STMicroelectronics STPS15M80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS15M80CT STPS15M80CT STMicroelectronics STPS15M80C.pdf Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
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STPS15SM80CFP STPS15SM80CFP STMicroelectronics STPS15SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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STPS15SM80CR STPS15SM80CR STMicroelectronics STPS15SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS15SM80CT STPS15SM80CT STMicroelectronics STPS15SM80C.pdf Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Produkt ist nicht verfügbar
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STPS20SM80CFP STPS20SM80CFP STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS20SM80CR STPS20SM80CR STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS20SM80CT STPS20SM80CT STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
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STPS30M80CFP STPS30M80CFP STMicroelectronics en.DM00026451.pdf Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
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STPS30M80CR STPS30M80CR STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS30M80CT STPS30M80CT STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220AB
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STPS30SM80CR STPS30SM80CR STMicroelectronics DM00026458.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS30SM80CT STPS30SM80CT STMicroelectronics en.DM00026458.pdf Description: DIODE ARR SCHOTT 80V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
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STPS40M80CR STPS40M80CR STMicroelectronics en.DM00026447.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS40M80CT STPS40M80CT STMicroelectronics en.DM00026447.pdf Description: DIODE ARR SCHOTT 80V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A
Current - Reverse Leakage @ Vr: 65 µA @ 80 V
Produkt ist nicht verfügbar
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STPS40SM80CFP STPS40SM80CFP STMicroelectronics STPS40SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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STPS40SM80CR STPS40SM80CR STMicroelectronics STPS40SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS40SM80CT STPS40SM80CT STMicroelectronics STPS40SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220AB
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STPSC2006CW STPSC2006CW STMicroelectronics en.DM00023175.pdf Description: DIODE ARRAY SIC 600V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
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STU8N65M5 STU8N65M5 STMicroelectronics en.CD00253250.pdf Description: MOSFET N-CH 650V 7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
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STW34NM60ND STW34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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2+17.46 EUR
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STW48NM60N STW48NM60N STMicroelectronics en.CD00293361.pdf Description: MOSFET N-CH 600V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4285 pF @ 50 V
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TN1205H-6T TN1205H-6T STMicroelectronics en.DM00022970.pdf Description: SCR 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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100+1.05 EUR
500+0.89 EUR
1000+0.73 EUR
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DCPL-WB-00D3 DCPL-WB-00D3 STMicroelectronics en.sgipad.pdf Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.2dB
Applications: W-CDMA
Coupling Factor: 37dB
Coupler Type: Dual Band, Dual Path
Return Loss: 15dB
Supplier Device Package: 8-FlipChip
Part Status: Active
Produkt ist nicht verfügbar
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LCDP1521SRL LCDP1521SRL STMicroelectronics en.CD00248637.pdf Description: THYRISTOR 60A 8SOIC
Packaging: Cut Tape (CT)
Capacitance: 35pF
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Supplier Device Package: 8-SOIC
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 25 A
Current - Peak Pulse (8/20µs): 60 A
Produkt ist nicht verfügbar
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STD155N3LH6 STD155N3LH6 STMicroelectronics en.CD00284003.pdf Description: MOSFET N-CH 30V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
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STPS15M80CG-TR STPS15M80CG-TR STMicroelectronics STPS15M80C.pdf Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS15SM80CG-TR STPS15SM80CG-TR STMicroelectronics DM00026510.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS30M80CG-TR STPS30M80CG-TR STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS40SM80CG-TR STPS40SM80CG-TR STMicroelectronics STPS40SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STTH110A STTH110A STMicroelectronics en.CD00003261.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 13354 Stücke:
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30+0.6 EUR
43+0.42 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 30
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TN1205H-6G-TR TN1205H-6G-TR STMicroelectronics en.DM00022970.pdf Description: SCR 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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STPS15SM80CG-TR STPS15SM80CG-TR STMicroelectronics DM00026510.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS30M80CG-TR en.DM00026451.pdf
STPS30M80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Produkt ist nicht verfügbar
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STPS30SM80CG-TR en.DM00026458.pdf
STPS30SM80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
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STPS40SM80CG-TR STPS40SM80C.pdf
STPS40SM80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Produkt ist nicht verfügbar
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TN1205H-6G-TR en.DM00022970.pdf
TN1205H-6G-TR
Hersteller: STMicroelectronics
Description: SCR 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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MD2009DFP MD2009DFP.pdf
MD2009DFP
Hersteller: STMicroelectronics
Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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STB155N3H6 en.DM00028021.pdf
STB155N3H6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Produkt ist nicht verfügbar
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STF18N55M5 STB_D_F_P18N55M5_Rev_3.pdf
STF18N55M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
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STFW60N65M5 en.CD00291091.pdf
STFW60N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 46A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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STI12N65M5 en.CD00226268.pdf
STI12N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Produkt ist nicht verfügbar
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STI16N65M5 STx16N65M5_Oct2011.pdf
STI16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Produkt ist nicht verfügbar
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STI21N65M5 stp21n65m5.pdf
STI21N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar
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STI260N6F6 en.CD00272622.pdf
STI260N6F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Produkt ist nicht verfügbar
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STI30N65M5 en.CD00223067.pdf
STI30N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 22A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Produkt ist nicht verfügbar
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STI32N65M5 en.CD00222634.pdf
STI32N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
Produkt ist nicht verfügbar
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STI35N65M5 en.CD00222927.pdf
STI35N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 27A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Produkt ist nicht verfügbar
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STI8N65M5 en.CD00253250.pdf
STI8N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Produkt ist nicht verfügbar
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STP210N75F6 STP210N75F6.pdf
STP210N75F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Produkt ist nicht verfügbar
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STP34NM60ND STx34NM60ND_DS.pdf
STP34NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.81 EUR
50+10.05 EUR
100+9.3 EUR
500+8.61 EUR
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STP75N3LLH6 STD%2CSTP%2CSTU75N3LLH6%28-S%29.pdf
STP75N3LLH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar
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STP7NM60N en.CD00252114.pdf
STP7NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Produkt ist nicht verfügbar
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STPS10M80CFP STPS10M80C.pdf
STPS10M80CFP
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Produkt ist nicht verfügbar
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STPS10M80CR STPS10M80C.pdf
STPS10M80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Produkt ist nicht verfügbar
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STPS10M80CT STPS10M80C.pdf
STPS10M80CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Produkt ist nicht verfügbar
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STPS10SM80CFP power-schottky-medium-vf-and-ir.html
STPS10SM80CFP
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Produkt ist nicht verfügbar
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STPS10SM80CR
STPS10SM80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Produkt ist nicht verfügbar
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STPS10SM80CT
STPS10SM80CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Produkt ist nicht verfügbar
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STPS15M80CFP STPS15M80C.pdf
STPS15M80CFP
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS15M80CR STPS15M80C.pdf
STPS15M80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Produkt ist nicht verfügbar
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STPS15M80CT STPS15M80C.pdf
STPS15M80CT
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS15SM80CFP STPS15SM80C.pdf
STPS15SM80CFP
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Produkt ist nicht verfügbar
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STPS15SM80CR STPS15SM80C.pdf
STPS15SM80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Produkt ist nicht verfügbar
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STPS15SM80CT STPS15SM80C.pdf
STPS15SM80CT
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Produkt ist nicht verfügbar
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STPS20SM80CFP en.DM00026449.pdf
STPS20SM80CFP
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS20SM80CR en.DM00026449.pdf
STPS20SM80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS20SM80CT en.DM00026449.pdf
STPS20SM80CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS30M80CFP en.DM00026451.pdf
STPS30M80CFP
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
STPS30M80CR en.DM00026451.pdf
STPS30M80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Produkt ist nicht verfügbar
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STPS30M80CT en.DM00026451.pdf
STPS30M80CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Produkt ist nicht verfügbar
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STPS30SM80CR DM00026458.pdf
STPS30SM80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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STPS30SM80CT en.DM00026458.pdf
STPS30SM80CT
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Produkt ist nicht verfügbar
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STPS40M80CR en.DM00026447.pdf
STPS40M80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Produkt ist nicht verfügbar
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STPS40M80CT en.DM00026447.pdf
STPS40M80CT
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A
Current - Reverse Leakage @ Vr: 65 µA @ 80 V
Produkt ist nicht verfügbar
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STPS40SM80CFP STPS40SM80C.pdf
STPS40SM80CFP
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Produkt ist nicht verfügbar
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STPS40SM80CR STPS40SM80C.pdf
STPS40SM80CR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Produkt ist nicht verfügbar
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STPS40SM80CT STPS40SM80C.pdf
STPS40SM80CT
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.1 EUR
10+4.59 EUR
Mindestbestellmenge: 4
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STPSC2006CW en.DM00023175.pdf
STPSC2006CW
Hersteller: STMicroelectronics
Description: DIODE ARRAY SIC 600V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.7 EUR
30+9.23 EUR
120+7.81 EUR
510+7.06 EUR
Mindestbestellmenge: 2
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STU8N65M5 en.CD00253250.pdf
STU8N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Produkt ist nicht verfügbar
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STW34NM60ND STx34NM60ND_DS.pdf
STW34NM60ND
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.46 EUR
30+10.45 EUR
120+8.91 EUR
Mindestbestellmenge: 2
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STW48NM60N en.CD00293361.pdf
STW48NM60N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4285 pF @ 50 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.92 EUR
30+6.78 EUR
120+6.43 EUR
Mindestbestellmenge: 2
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TN1205H-6T en.DM00022970.pdf
TN1205H-6T
Hersteller: STMicroelectronics
Description: SCR 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 1913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
50+1.33 EUR
100+1.05 EUR
500+0.89 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
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DCPL-WB-00D3 en.sgipad.pdf
DCPL-WB-00D3
Hersteller: STMicroelectronics
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.2dB
Applications: W-CDMA
Coupling Factor: 37dB
Coupler Type: Dual Band, Dual Path
Return Loss: 15dB
Supplier Device Package: 8-FlipChip
Part Status: Active
Produkt ist nicht verfügbar
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LCDP1521SRL en.CD00248637.pdf
LCDP1521SRL
Hersteller: STMicroelectronics
Description: THYRISTOR 60A 8SOIC
Packaging: Cut Tape (CT)
Capacitance: 35pF
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Supplier Device Package: 8-SOIC
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 25 A
Current - Peak Pulse (8/20µs): 60 A
Produkt ist nicht verfügbar
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STD155N3LH6 en.CD00284003.pdf
STD155N3LH6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar
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STPS15M80CG-TR STPS15M80C.pdf
STPS15M80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Produkt ist nicht verfügbar
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STPS15SM80CG-TR DM00026510.pdf
STPS15SM80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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STPS30M80CG-TR en.DM00026451.pdf
STPS30M80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Produkt ist nicht verfügbar
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STPS40SM80CG-TR STPS40SM80C.pdf
STPS40SM80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Produkt ist nicht verfügbar
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STTH110A en.CD00003261.pdf
STTH110A
Hersteller: STMicroelectronics
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 13354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
43+0.42 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 30
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TN1205H-6G-TR en.DM00022970.pdf
TN1205H-6G-TR
Hersteller: STMicroelectronics
Description: SCR 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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STPS15SM80CG-TR DM00026510.pdf
STPS15SM80CG-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Produkt ist nicht verfügbar
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