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BYW100-200 BYW100-200 STMicroelectronics BYW100-200.pdf Description: DIODE STANDARD 200V 1.5A DO15
Supplier Device Package: DO-15
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
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BYW100-200 BYW100-200 STMicroelectronics BYW100-200.pdf Description: DIODE STANDARD 200V 1.5A DO15
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BYW98-200 BYW98-200 STMicroelectronics BYW98.pdf Description: DIODE STANDARD 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BYW98-200 BYW98-200 STMicroelectronics BYW98.pdf Description: DIODE STANDARD 200V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Produkt ist nicht verfügbar
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MJD2955T4 MJD2955T4 STMicroelectronics en.CD00000830.pdf Description: TRANS PNP 60V 10A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: DPAK
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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MJD2955T4 MJD2955T4 STMicroelectronics en.CD00000830.pdf Description: TRANS PNP 60V 10A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: DPAK
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MJD350T4 MJD350T4 STMicroelectronics en.CD00000832.pdf Description: TRANS PNP 300V 0.5A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 100µA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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MJD350T4 MJD350T4 STMicroelectronics en.CD00000832.pdf Description: TRANS PNP 300V 0.5A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 100µA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SMBJ18A-TR SMBJ18A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ18A-TR SMBJ18A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24A-TR SMBJ24A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24A-TR SMBJ24A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24CA-TR SMBJ24CA-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24CA-TR SMBJ24CA-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ30CA-TR SMBJ30CA-TR STMicroelectronics cd00001366.pdf description Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ30CA-TR SMBJ30CA-TR STMicroelectronics cd00001366.pdf description Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ58CA-TR SMBJ58CA-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ58CA-TR SMBJ58CA-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ5.0A-TR SMBJ5.0A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ5.0A-TR SMBJ5.0A-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ5.0CA-TR SMBJ5.0CA-TR STMicroelectronics cd00001366.pdf description Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ5.0CA-TR SMBJ5.0CA-TR STMicroelectronics cd00001366.pdf description Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ6.5CA-TR SMBJ6.5CA-TR STMicroelectronics cd00001366.pdf Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBYT01-400 SMBYT01-400 STMicroelectronics SMBYT01.pdf Description: DIODE STANDARD 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SMBYT01-400 SMBYT01-400 STMicroelectronics SMBYT01.pdf Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SMDB3 SMDB3 STMicroelectronics en.CD00002277.pdf Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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SMDB3 SMDB3 STMicroelectronics en.CD00002277.pdf Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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ST13005 ST13005 STMicroelectronics ST13005_Rev2012.pdf description Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
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ST1802HI ST1802HI STMicroelectronics ST1802HI.pdf Description: TRANS NPN 600V 10A ISOWATT-218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Produkt ist nicht verfügbar
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STC5NF20V STC5NF20V STMicroelectronics en.CD00002504.pdf Description: MOSFET 2N-CH 20V 5A 8-TSSOP
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STC5NF20V STC5NF20V STMicroelectronics en.CD00002504.pdf Description: MOSFET 2N-CH 20V 5A 8-TSSOP
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STC6NF30V STC6NF30V STMicroelectronics en.CD00002964.pdf Description: MOSFET 2N-CH 30V 6A 8-TSSOP
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STC6NF30V STC6NF30V STMicroelectronics en.CD00002964.pdf Description: MOSFET 2N-CH 30V 6A 8-TSSOP
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STD10NF10T4 STD10NF10T4 STMicroelectronics en.DM00281628.pdf Description: MOSFET N-CH 100V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD10NF10T4 STD10NF10T4 STMicroelectronics en.DM00281628.pdf Description: MOSFET N-CH 100V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STD12NF06T4 STD12NF06T4 STMicroelectronics en.CD00002756.pdf Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
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STD12NF06T4 STD12NF06T4 STMicroelectronics en.CD00002756.pdf Description: MOSFET N-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
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STD17NF03LT4 STD17NF03LT4 STMicroelectronics STD17NF03L%28-1%29.pdf Description: MOSFET N-CH 30V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
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STD17NF03LT4 STD17NF03LT4 STMicroelectronics STD17NF03L%28-1%29.pdf Description: MOSFET N-CH 30V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
auf Bestellung 3398 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
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STD25NF10LT4 STD25NF10LT4 STMicroelectronics STD25NF10LT4.pdf Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8643 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.56 EUR
10+2.96 EUR
100+2.05 EUR
500+1.71 EUR
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STD25NF10LT4 STD25NF10LT4 STMicroelectronics STD25NF10LT4.pdf Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 7500 Stücke:
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2500+1.39 EUR
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STD30NF03LT4 STD30NF03LT4 STMicroelectronics STD30NF03L%28-1%29.pdf Description: MOSFET N-CH 30V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
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STD30PF03LT4 STD30PF03LT4 STMicroelectronics en.CD00003366.pdf Description: MOSFET P-CH 30V 24A DPAK
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
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STD38NH02LT4 STD38NH02LT4 STMicroelectronics en.CD00003045.pdf Description: MOSFET N-CH 24V 38A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
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STD38NH02LT4 STD38NH02LT4 STMicroelectronics en.CD00003045.pdf Description: MOSFET N-CH 24V 38A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD3NM60T4 STD3NM60T4 STMicroelectronics en.CD00002718.pdf Description: MOSFET N-CH 600V 3A DPAK
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STD3NM60T4 STD3NM60T4 STMicroelectronics en.CD00002718.pdf Description: MOSFET N-CH 600V 3A DPAK
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STD5NM50T4 STD5NM50T4 STMicroelectronics STD5NM50%28-1%29.pdf Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STD5NM50T4 STD5NM50T4 STMicroelectronics STD5NM50%28-1%29.pdf Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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2500+1.49 EUR
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STD5NM60T4 STD5NM60T4 STMicroelectronics en.CD00002085.pdf Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6788 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.88 EUR
10+3.17 EUR
100+2.19 EUR
500+1.77 EUR
1000+1.71 EUR
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STD60NH03L-1 STD60NH03L-1 STMicroelectronics en.CD00003434.pdf Description: MOSFET N-CH 30V 60A I-PAK
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STD70NH02LT4 STD70NH02LT4 STMicroelectronics en.CD00003443.pdf Description: MOSFET N-CH 24V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STE180NE10 STE180NE10 STMicroelectronics en.CD00001950.pdf Description: MOSFET N-CH 100V 180A ISOTOP
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STE250NS10 STE250NS10 STMicroelectronics en.CD00002654.pdf Description: MOSFET N-CH 100V 220A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 900 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STE26NA90 STE26NA90 STMicroelectronics STE26NA90.pdf Description: MOSFET N-CH 900V 26A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 3.75V @ 1mA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Produkt ist nicht verfügbar
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STE48NM50 STE48NM50 STMicroelectronics en.CD00002356.pdf Description: MOSFET N-CH 550V 48A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.01 EUR
10+40.88 EUR
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STE48NM60 STE48NM60 STMicroelectronics en.CD00003380.pdf Description: MOSFET N-CH 650V 48A ISOTOP
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Produkt ist nicht verfügbar
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STE70NM50 STE70NM50 STMicroelectronics STE70NM50.pdf description Description: MOSFET N-CH 500V 70A ISOTOP
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BYW100-200 BYW100-200.pdf
BYW100-200
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 1.5A DO15
Supplier Device Package: DO-15
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
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BYW100-200 BYW100-200.pdf
BYW100-200
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 1.5A DO15
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 4.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-15
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BYW98-200 BYW98.pdf
BYW98-200
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO201AD
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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BYW98-200 BYW98.pdf
BYW98-200
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 3A DO201AD
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Produkt ist nicht verfügbar
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MJD2955T4 en.CD00000830.pdf
MJD2955T4
Hersteller: STMicroelectronics
Description: TRANS PNP 60V 10A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: DPAK
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MJD2955T4 en.CD00000830.pdf
MJD2955T4
Hersteller: STMicroelectronics
Description: TRANS PNP 60V 10A DPAK
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: DPAK
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MJD350T4 en.CD00000832.pdf
MJD350T4
Hersteller: STMicroelectronics
Description: TRANS PNP 300V 0.5A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 100µA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 18850 Stücke:
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Anzahl Preis
11+1.69 EUR
17+1.06 EUR
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MJD350T4 en.CD00000832.pdf
MJD350T4
Hersteller: STMicroelectronics
Description: TRANS PNP 300V 0.5A DPAK
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 100µA (ICBO)
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SMBJ18A-TR cd00001366.pdf
SMBJ18A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ18A-TR cd00001366.pdf
SMBJ18A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 18VWM 29.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.5A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24A-TR cd00001366.pdf
SMBJ24A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24A-TR cd00001366.pdf
SMBJ24A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ24CA-TR cd00001366.pdf
SMBJ24CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 15000 Stücke:
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Anzahl Preis
2500+0.24 EUR
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SMBJ24CA-TR cd00001366.pdf
SMBJ24CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 24VWM 38.9VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 15806 Stücke:
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18+1.02 EUR
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SMBJ30CA-TR description cd00001366.pdf
SMBJ30CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 14626 Stücke:
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18+1.02 EUR
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SMBJ30CA-TR description cd00001366.pdf
SMBJ30CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 30VWM 48.4VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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2500+0.24 EUR
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SMBJ58CA-TR cd00001366.pdf
SMBJ58CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SMBJ58CA-TR cd00001366.pdf
SMBJ58CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 58VWM 93.6VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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28+0.65 EUR
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500+0.24 EUR
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Mindestbestellmenge: 28
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SMBJ5.0A-TR cd00001366.pdf
SMBJ5.0A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ5.0A-TR cd00001366.pdf
SMBJ5.0A-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ5.0CA-TR description cd00001366.pdf
SMBJ5.0CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMBJ5.0CA-TR description cd00001366.pdf
SMBJ5.0CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 5VWM 9.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 2474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.31 EUR
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Mindestbestellmenge: 19
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SMBJ6.5CA-TR cd00001366.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.24 EUR
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SMBJ6.5CA-TR cd00001366.pdf
SMBJ6.5CA-TR
Hersteller: STMicroelectronics
Description: TVS DIODE 6.5VWM 11.2VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 56A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.2V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 18194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
29+0.63 EUR
100+0.4 EUR
500+0.3 EUR
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Mindestbestellmenge: 18
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SMBYT01-400 SMBYT01.pdf
SMBYT01-400
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SMBYT01-400 SMBYT01.pdf
SMBYT01-400
Hersteller: STMicroelectronics
Description: DIODE STANDARD 400V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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SMDB3 en.CD00002277.pdf
SMDB3
Hersteller: STMicroelectronics
Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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SMDB3 en.CD00002277.pdf
SMDB3
Hersteller: STMicroelectronics
Description: DIAC/SIDAC 28-36V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 10 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Peak Output: 1 A
Produkt ist nicht verfügbar
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ST13005 description ST13005_Rev2012.pdf
ST13005
Hersteller: STMicroelectronics
Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
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ST1802HI ST1802HI.pdf
ST1802HI
Hersteller: STMicroelectronics
Description: TRANS NPN 600V 10A ISOWATT-218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 5A, 5V
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Produkt ist nicht verfügbar
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STC5NF20V en.CD00002504.pdf
STC5NF20V
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8-TSSOP
Produkt ist nicht verfügbar
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STC5NF20V en.CD00002504.pdf
STC5NF20V
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8-TSSOP
Produkt ist nicht verfügbar
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STC6NF30V en.CD00002964.pdf
STC6NF30V
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 6A 8-TSSOP
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STC6NF30V en.CD00002964.pdf
STC6NF30V
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 6A 8-TSSOP
Produkt ist nicht verfügbar
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STD10NF10T4 en.DM00281628.pdf
STD10NF10T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.8 EUR
5000+0.77 EUR
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STD10NF10T4 en.DM00281628.pdf
STD10NF10T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 13A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
Mindestbestellmenge: 19
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STD12NF06T4 en.CD00002756.pdf
STD12NF06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
auf Bestellung 5551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.68 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
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STD12NF06T4 en.CD00002756.pdf
STD12NF06T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.73 EUR
5000+0.68 EUR
Mindestbestellmenge: 2500
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STD17NF03LT4 STD17NF03L%28-1%29.pdf
STD17NF03LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.33 EUR
Mindestbestellmenge: 2500
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STD17NF03LT4 STD17NF03L%28-1%29.pdf
STD17NF03LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
auf Bestellung 3398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
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STD25NF10LT4 STD25NF10LT4.pdf
STD25NF10LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 8643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.56 EUR
10+2.96 EUR
100+2.05 EUR
500+1.71 EUR
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STD25NF10LT4 STD25NF10LT4.pdf
STD25NF10LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.39 EUR
Mindestbestellmenge: 2500
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STD30NF03LT4 STD30NF03L%28-1%29.pdf
STD30NF03LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
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STD30PF03LT4 en.CD00003366.pdf
STD30PF03LT4
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 24A DPAK
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
Produkt ist nicht verfügbar
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STD38NH02LT4 en.CD00003045.pdf
STD38NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 38A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
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STD38NH02LT4 en.CD00003045.pdf
STD38NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 38A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD3NM60T4 en.CD00002718.pdf
STD3NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3A DPAK
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STD3NM60T4 en.CD00002718.pdf
STD3NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3A DPAK
Produkt ist nicht verfügbar
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STD5NM50T4 STD5NM50%28-1%29.pdf
STD5NM50T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STD5NM50T4 STD5NM50%28-1%29.pdf
STD5NM50T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.49 EUR
5000+1.4 EUR
Mindestbestellmenge: 2500
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STD5NM60T4 en.CD00002085.pdf
STD5NM60T4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
10+3.17 EUR
100+2.19 EUR
500+1.77 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
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STD60NH03L-1 en.CD00003434.pdf
STD60NH03L-1
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 60A I-PAK
Produkt ist nicht verfügbar
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STD70NH02LT4 en.CD00003443.pdf
STD70NH02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 24V 60A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STE180NE10 en.CD00001950.pdf
STE180NE10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A ISOTOP
Produkt ist nicht verfügbar
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STE250NS10 en.CD00002654.pdf
STE250NS10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 220A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 31000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 900 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STE26NA90 STE26NA90.pdf
STE26NA90
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 26A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 3.75V @ 1mA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STE48NM50 en.CD00002356.pdf
STE48NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 48A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.01 EUR
10+40.88 EUR
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STE48NM60 en.CD00003380.pdf
STE48NM60
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 48A ISOTOP
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
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STE70NM50 description STE70NM50.pdf
STE70NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 70A ISOTOP
Produkt ist nicht verfügbar
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