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STP60NF06FP STP60NF06FP STMicroelectronics en.CD00154892.pdf Description: MOSFET N-CH 60V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
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100+1.67 EUR
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STP6NK60Z STP6NK60Z STMicroelectronics en.CD00002937.pdf Description: MOSFET N-CH 600V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
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STP6NK90Z STP6NK90Z STMicroelectronics en.CD00003175.pdf description Description: MOSFET N-CH 900V 5.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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STP7NK40Z STP7NK40Z STMicroelectronics en.CD00003040.pdf description Description: MOSFET N-CH 400V 5.4A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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STP80NF06 STP80NF06 STMicroelectronics Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP80NF55-08 STP80NF55-08 STMicroelectronics en.CD00187183.pdf Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
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STP9NK50Z STP9NK50Z STMicroelectronics en.CD00002970.pdf description Description: MOSFET N-CH 500V 7.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
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STPR1520D STPR1520D STMicroelectronics Description: DIODE STANDARD 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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STPS0520Z STPS0520Z STMicroelectronics en.CD00002261.pdf Description: DIODE SCHOTTKY 20V 500MA SOD123
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STPS0520Z STPS0520Z STMicroelectronics en.CD00002261.pdf Description: DIODE SCHOTTKY 20V 500MA SOD123
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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STPS10L45CG STPS10L45CG STMicroelectronics STPS10L45CG.pdf Description: DIODE ARRAY SCHOTTKY 45V D2PAK
Produkt ist nicht verfügbar
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STPS12045TV STPS12045TV STMicroelectronics en.CD00000801.pdf Description: DIODE MOD SCHOTT 45V 60A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STPS15H100CB-TR STPS15H100CB-TR STMicroelectronics en.CD00002831.pdf Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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STPS15H100CB-TR STPS15H100CB-TR STMicroelectronics en.CD00002831.pdf Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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500+0.8 EUR
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STPS1H100A STPS1H100A STMicroelectronics en.CD00001304.pdf Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
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STPS1H100A STPS1H100A STMicroelectronics en.CD00001304.pdf Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Produkt ist nicht verfügbar
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STPS1H100U STPS1H100U STMicroelectronics en.CD00001304.pdf Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
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STPS1H100U STPS1H100U STMicroelectronics en.CD00001304.pdf Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
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STPS1L20M STPS1L20M STMicroelectronics en.CD00003013.pdf Description: DIODE SCHOTTKY 20V 1A STMITE
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
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48+0.44 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.19 EUR
5000+0.18 EUR
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STPS1L20M STPS1L20M STMicroelectronics en.CD00003013.pdf Description: DIODE SCHOTTKY 20V 1A STMITE
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
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STPS1L40M STPS1L40M STMicroelectronics en.CD00003015.pdf Description: DIODE SCHOTTKY 40V 1A STMITE
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
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STPS1L40M STPS1L40M STMicroelectronics en.CD00003015.pdf Description: DIODE SCHOTTKY 40V 1A STMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
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45+0.46 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.2 EUR
2000+0.19 EUR
5000+0.18 EUR
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STPS2150 STPS2150 STMicroelectronics en.CD00003322.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
auf Bestellung 992 Stücke:
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25+0.83 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
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STPS2150 STPS2150 STMicroelectronics en.CD00003322.pdf Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
Produkt ist nicht verfügbar
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STPS2L60 STPS2L60 STMicroelectronics en.CD00003166.pdf Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STPS2L60 STPS2L60 STMicroelectronics en.CD00003166.pdf Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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STPS3045CP STPS3045CP STMicroelectronics en.CD00000821.pdf Description: DIODE ARRAY SCHOT 45V 15A SOT-93
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: 200°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar
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STPS3150RL STPS3150RL STMicroelectronics en.CD00003323.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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STPS3150RL STPS3150RL STMicroelectronics en.CD00003323.pdf Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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STPS40150CT STPS40150CT STMicroelectronics en.CD00004991.pdf Description: DIODE ARR SCHOTT 150V 20A TO-220
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS40150CW STPS40150CW STMicroelectronics en.CD00004991.pdf Description: DIODE ARR SCHOT 150V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
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STPS61150CW STPS61150CW STMicroelectronics en.CD00003685.pdf Description: DIODE ARR SCHOT 150V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
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STPS61H100CW STPS61H100CW STMicroelectronics stps61h100c.pdf Description: DIODE ARR SCHOT 100V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 16 µA @ 100 V
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STPS80150CW STPS80150CW STMicroelectronics en.CD00003688.pdf Description: DIODE ARR SCHOT 150V 40A TO247-3
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STPS8L30B-TR STPS8L30B-TR STMicroelectronics en.CD00001328.pdf description Description: DIODE SCHOTTKY 30V 8A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STS12NF30L STS12NF30L STMicroelectronics Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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STS12NF30L STS12NF30L STMicroelectronics Description: MOSFET N-CH 30V 12A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
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STS17NF3LL STS17NF3LL STMicroelectronics en.CD00002899.pdf Description: MOSFET N-CH 30V 17A 8SO
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.2W (Tc)
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STS2DPFS20V STS2DPFS20V STMicroelectronics CD00002609.pdf Description: MOSFET P-CH 20V 2.5A 8-SOIC
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STS2DPFS20V STS2DPFS20V STMicroelectronics CD00002609.pdf Description: MOSFET P-CH 20V 2.5A 8-SOIC
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STS4DNFS30L STS4DNFS30L STMicroelectronics en.CD00002834.pdf Description: MOSFET N-CH 30V 4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS4DPF30L STS4DPF30L STMicroelectronics en.CD00002918.pdf Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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STS4DPF30L STS4DPF30L STMicroelectronics en.CD00002918.pdf Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS5DNF20V STS5DNF20V STMicroelectronics en.CD00002341.pdf description Description: MOSFET 2N-CH 20V 5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS5DNF20V STS5DNF20V STMicroelectronics en.CD00002341.pdf description Description: MOSFET 2N-CH 20V 5A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
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STS5PF20V STS5PF20V STMicroelectronics en.CD00003660.pdf Description: MOSFET P-CH 20V 5A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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STS5PF30L STS5PF30L STMicroelectronics en.CD00001945.pdf Description: MOSFET P-CH 30V 5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS7C4F30L STS7C4F30L STMicroelectronics STS7C4F30L.pdf Description: MOSFET N/P-CH 30V 7A/4A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A, 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS7PF30L STS7PF30L STMicroelectronics STS7PF30L.pdf Description: MOSFET P-CH 30V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS9NF30L STS9NF30L STMicroelectronics en.CD00001935.pdf Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS9NF30L STS9NF30L STMicroelectronics en.CD00001935.pdf Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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STSA851 STSA851 STMicroelectronics en.CD00003052.pdf Description: TRANS NPN 60V 5A TO92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Operating Temperature: 150°C (TJ)
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STT4PF20V STT4PF20V STMicroelectronics en.CD00003353.pdf Description: MOSFET P-CH 20V 3A SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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STT4PF20V STT4PF20V STMicroelectronics en.CD00003353.pdf Description: MOSFET P-CH 20V 3A SOT-23-6
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Produkt ist nicht verfügbar
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STTA112U STTA112U STMicroelectronics STTA112U.pdf Description: DIODE GEN PURP 1.2KV 1A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTA112U STTA112U STMicroelectronics STTA112U.pdf Description: DIODE GEN PURP 1.2KV 1A SMB
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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STTA212S STTA212S STMicroelectronics STTA212S.pdf Description: DIODE GEN PURP 1.2KV 2A SMC
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMC
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTA506D STTA506D STMicroelectronics en.CD00000743.pdf Description: DIODE STANDARD 600V 5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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STTH1506DPI STTH1506DPI STMicroelectronics en.CD00003621.pdf Description: DIODE STANDARD 600V 15A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 442 Stücke:
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30+6.27 EUR
120+6.13 EUR
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STTH1L06A STTH1L06A STMicroelectronics en.CD00002694.pdf Description: DIODE STANDARD 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 135000 Stücke:
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5000+0.38 EUR
15000+0.35 EUR
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STP60NF06FP en.CD00154892.pdf
STP60NF06FP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
auf Bestellung 795 Stücke:
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6+3.86 EUR
10+2.46 EUR
50+1.86 EUR
100+1.67 EUR
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STP6NK60Z en.CD00002937.pdf
STP6NK60Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V
auf Bestellung 1809 Stücke:
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4+5.76 EUR
10+3.74 EUR
50+2.87 EUR
100+2.58 EUR
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STP6NK90Z description en.CD00003175.pdf
STP6NK90Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 5.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 60.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 1063 Stücke:
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3+8.21 EUR
10+5.41 EUR
50+4.21 EUR
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STP7NK40Z description en.CD00003040.pdf
STP7NK40Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 400V 5.4A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 3301 Stücke:
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5+4.82 EUR
10+3.09 EUR
50+2.36 EUR
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STP80NF06
STP80NF06
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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STP80NF55-08 en.CD00187183.pdf
STP80NF55-08
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
auf Bestellung 758 Stücke:
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4+5.57 EUR
10+3.61 EUR
50+2.76 EUR
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STP9NK50Z description en.CD00002970.pdf
STP9NK50Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 7.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
auf Bestellung 744 Stücke:
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4+6.7 EUR
50+3.36 EUR
100+3.03 EUR
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STPR1520D
STPR1520D
Hersteller: STMicroelectronics
Description: DIODE STANDARD 200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Produkt ist nicht verfügbar
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STPS0520Z en.CD00002261.pdf
STPS0520Z
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 20V 500MA SOD123
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STPS0520Z en.CD00002261.pdf
STPS0520Z
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 20V 500MA SOD123
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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STPS10L45CG STPS10L45CG.pdf
STPS10L45CG
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 45V D2PAK
Produkt ist nicht verfügbar
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STPS12045TV en.CD00000801.pdf
STPS12045TV
Hersteller: STMicroelectronics
Description: DIODE MOD SCHOTT 45V 60A ISOTOP
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
auf Bestellung 376 Stücke:
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1+38.96 EUR
10+28.02 EUR
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STPS15H100CB-TR en.CD00002831.pdf
STPS15H100CB-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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STPS15H100CB-TR en.CD00002831.pdf
STPS15H100CB-TR
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 100V 7.5A DPAK
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2534 Stücke:
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9+2.48 EUR
14+1.56 EUR
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STPS1H100A en.CD00001304.pdf
STPS1H100A
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
auf Bestellung 36 Stücke:
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AnzahlPrivatkunde
26+0.82 EUR
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STPS1H100A en.CD00001304.pdf
STPS1H100A
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
Produkt ist nicht verfügbar
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STPS1H100U en.CD00001304.pdf
STPS1H100U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
auf Bestellung 20000 Stücke:
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AnzahlPrivatkunde
2500+0.2 EUR
7500+0.18 EUR
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STPS1H100U en.CD00001304.pdf
STPS1H100U
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 100V 1A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 4 µA @ 100 V
auf Bestellung 20078 Stücke:
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AnzahlPrivatkunde
23+0.92 EUR
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52+0.4 EUR
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STPS1L20M en.CD00003013.pdf
STPS1L20M
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 20V 1A STMITE
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Cut Tape (CT)
auf Bestellung 19870 Stücke:
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33+0.65 EUR
48+0.44 EUR
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5000+0.18 EUR
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STPS1L20M en.CD00003013.pdf
STPS1L20M
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 20V 1A STMITE
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 150°C (Max)
auf Bestellung 12000 Stücke:
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12000+0.15 EUR
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STPS1L40M en.CD00003015.pdf
STPS1L40M
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A STMITE
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: STmite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
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STPS1L40M en.CD00003015.pdf
STPS1L40M
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A STMITE
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 1 A
Current - Reverse Leakage @ Vr: 63 µA @ 40 V
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STPS2150 en.CD00003322.pdf
STPS2150
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
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STPS2150 en.CD00003322.pdf
STPS2150
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 150V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.5 µA @ 150 V
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STPS2L60 en.CD00003166.pdf
STPS2L60
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STPS2L60 en.CD00003166.pdf
STPS2L60
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 60V 2A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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STPS3045CP en.CD00000821.pdf
STPS3045CP
Hersteller: STMicroelectronics
Description: DIODE ARRAY SCHOT 45V 15A SOT-93
Packaging: Tube
Package / Case: TO-218-3, TO-218AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: SOT-93
Operating Temperature - Junction: 200°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Produkt ist nicht verfügbar
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STPS3150RL en.CD00003323.pdf
STPS3150RL
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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STPS3150RL en.CD00003323.pdf
STPS3150RL
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 150V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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STPS40150CT en.CD00004991.pdf
STPS40150CT
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 150V 20A TO-220
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS40150CW en.CD00004991.pdf
STPS40150CW
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 150V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 20 A
Current - Reverse Leakage @ Vr: 8 µA @ 150 V
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STPS61150CW en.CD00003685.pdf
STPS61150CW
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 150V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
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STPS61H100CW stps61h100c.pdf
STPS61H100CW
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 100V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 30 A
Current - Reverse Leakage @ Vr: 16 µA @ 100 V
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STPS80150CW en.CD00003688.pdf
STPS80150CW
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOT 150V 40A TO247-3
Current - Reverse Leakage @ Vr: 30 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 40A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STPS8L30B-TR description en.CD00001328.pdf
STPS8L30B-TR
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 30V 8A DPAK
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STS12NF30L
STS12NF30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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STS12NF30L
STS12NF30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 12A 8SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Produkt ist nicht verfügbar
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STS17NF3LL en.CD00002899.pdf
STS17NF3LL
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 17A 8SO
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.2W (Tc)
Produkt ist nicht verfügbar
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STS2DPFS20V CD00002609.pdf
STS2DPFS20V
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 2.5A 8-SOIC
Produkt ist nicht verfügbar
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STS2DPFS20V CD00002609.pdf
STS2DPFS20V
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 2.5A 8-SOIC
Produkt ist nicht verfügbar
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STS4DNFS30L en.CD00002834.pdf
STS4DNFS30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS4DPF30L en.CD00002918.pdf
STS4DPF30L
Hersteller: STMicroelectronics
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STS4DPF30L en.CD00002918.pdf
STS4DPF30L
Hersteller: STMicroelectronics
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS5DNF20V description en.CD00002341.pdf
STS5DNF20V
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS5DNF20V description en.CD00002341.pdf
STS5DNF20V
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 20V 5A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 40mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 600mV @ 250µA
Produkt ist nicht verfügbar
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STS5PF20V en.CD00003660.pdf
STS5PF20V
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 5A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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STS5PF30L en.CD00001945.pdf
STS5PF30L
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS7C4F30L STS7C4F30L.pdf
STS7C4F30L
Hersteller: STMicroelectronics
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A, 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS7PF30L STS7PF30L.pdf
STS7PF30L
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS9NF30L en.CD00001935.pdf
STS9NF30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS9NF30L en.CD00001935.pdf
STS9NF30L
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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STSA851 en.CD00003052.pdf
STSA851
Hersteller: STMicroelectronics
Description: TRANS NPN 60V 5A TO92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 5A
Operating Temperature: 150°C (TJ)
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STT4PF20V en.CD00003353.pdf
STT4PF20V
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 3A SOT-23-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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STT4PF20V en.CD00003353.pdf
STT4PF20V
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 3A SOT-23-6
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 1.6W (Tc)
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STTA112U STTA112U.pdf
STTA112U
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 1A SMB
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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STTA112U STTA112U.pdf
STTA112U
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 1A SMB
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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STTA212S STTA212S.pdf
STTA212S
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 2A SMC
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMC
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTA506D en.CD00000743.pdf
STTA506D
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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STTH1506DPI en.CD00003621.pdf
STTH1506DPI
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 15A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 15 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 442 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.34 EUR
30+6.27 EUR
120+6.13 EUR
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STTH1L06A en.CD00002694.pdf
STTH1L06A
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 135000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.38 EUR
15000+0.35 EUR
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