Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (160960) > Seite 46 nach 2683
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STTH1L06A | STMicroelectronics |
Description: DIODE GEN PURP 600V 1A SMA Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 53733 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH1L06RL | STMicroelectronics |
Description: DIODE GEN PURP 600V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH1L06RL | STMicroelectronics |
Description: DIODE GEN PURP 600V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 27808 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH1R06RL | STMicroelectronics |
Description: DIODE GEN PURP 600V 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 23488 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH1R06RL | STMicroelectronics |
Description: DIODE GEN PURP 600V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH3006DPI | STMicroelectronics |
Description: DIODE GEN PURP 600V 30A DOP3I Packaging: Tube Package / Case: DOP3I-2 Insulated (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: DOP3I Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 600 V |
Produkt ist nicht verfügbar |
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STTH3L06 | STMicroelectronics |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
auf Bestellung 20400 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH3L06 | STMicroelectronics |
Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
auf Bestellung 1015 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH506DTI | STMicroelectronics |
Description: DIODE GP 600V 5A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 5 A Current - Reverse Leakage @ Vr: 6 µA @ 600 V |
auf Bestellung 671 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH5L06B-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 22698 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH5L06B-TR | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH5R06FP | STMicroelectronics |
Description: DIODE GEN PURP 600V 5A TO220FPAC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 600 V |
auf Bestellung 589 Stücke: Lieferzeit 21-28 Tag (e) |
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STTH806DTI | STMicroelectronics |
Description: DIODE GP 600V 8A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 1708 Stücke: Lieferzeit 21-28 Tag (e) |
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STV160NF02LT4 | STMicroelectronics |
Description: MOSFET N-CH 20V 160A 10POWERSO Packaging: Tape & Reel (TR) Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 10-PowerSO Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V |
Produkt ist nicht verfügbar |
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STV160NF03LT4 | STMicroelectronics |
Description: MOSFET N-CH 30V 160A 10POWERSO Packaging: Tape & Reel (TR) Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 10-PowerSO Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW10NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
auf Bestellung 421 Stücke: Lieferzeit 21-28 Tag (e) |
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STW10NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V |
auf Bestellung 637 Stücke: Lieferzeit 21-28 Tag (e) |
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STW11NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 8.3A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW12NK80Z | STMicroelectronics |
Description: MOSFET N-CH 800V 10.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V |
auf Bestellung 546 Stücke: Lieferzeit 21-28 Tag (e) |
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STW13NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 13A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW14NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 54 Stücke: Lieferzeit 21-28 Tag (e) |
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STW14NM50 | STMicroelectronics |
Description: MOSFET N-CH 550V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW15NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 14A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V |
auf Bestellung 582 Stücke: Lieferzeit 21-28 Tag (e) |
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STW20NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) |
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STW20NM50 | STMicroelectronics |
Description: MOSFET N-CH 550V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW20NM60 | STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
auf Bestellung 544 Stücke: Lieferzeit 21-28 Tag (e) |
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STW26NM50 | STMicroelectronics |
Description: MOSFET N-CH 500V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 362 Stücke: Lieferzeit 21-28 Tag (e) |
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STW26NM60 | STMicroelectronics |
Description: MOSFET N-CH 600V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
Produkt ist nicht verfügbar |
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STW80NF06 | STMicroelectronics |
Description: MOSFET N-CH 60V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V |
Produkt ist nicht verfügbar |
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STY140NS10 | STMicroelectronics |
Description: MOSFET N-CH 100V 140A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MAX247™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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T410-600B-TR | STMicroelectronics |
Description: TRIAC SENS GATE 600V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 600 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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T410-600B-TR | STMicroelectronics |
Description: TRIAC SENS GATE 600V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 600 V |
auf Bestellung 3217 Stücke: Lieferzeit 21-28 Tag (e) |
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T835-600B-TR | STMicroelectronics |
Description: TRIAC ALTERNISTOR 600V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 600 V |
auf Bestellung 22500 Stücke: Lieferzeit 21-28 Tag (e) |
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T835-600B-TR | STMicroelectronics |
Description: TRIAC ALTERNISTOR 600V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 600 V |
auf Bestellung 25348 Stücke: Lieferzeit 21-28 Tag (e) |
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TIP127FP | STMicroelectronics |
Description: TRANS PNP DARL 100V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Supplier Device Package: TO-220FP Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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TMMBAT42FILM | STMicroelectronics |
Description: DIODE SCHOTT 30V 200MA MINI MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
auf Bestellung 13874 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMBAT42FILM | STMicroelectronics |
Description: DIODE SCHOTT 30V 200MA MINI MELF Packaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
auf Bestellung 14547 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMBAT46FILM | STMicroelectronics |
Description: DIODE SCHOT 100V 150MA MINI MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 10pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMBAT46FILM | STMicroelectronics |
Description: DIODE SCHOT 100V 150MA MINI MELF Packaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 10pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 7319 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMBAT48FILM | STMicroelectronics |
Description: DIODE SCHOTT 40V 350MA MINI MELF Packaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 350mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 40 V |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMBAT48FILM | STMicroelectronics |
Description: DIODE SCHOTT 40V 350MA MINI MELF Packaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 20pF @ 0V, 1MHz Current - Average Rectified (Io): 350mA Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA Current - Reverse Leakage @ Vr: 25 µA @ 40 V |
auf Bestellung 14294 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMDB3 | STMicroelectronics |
Description: DIAC 28-36V 2A MINIMELF Packaging: Cut Tape (CT) Package / Case: DO-213AA Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Breakover: 28 ~ 36V Current - Breakover: 50 µA Supplier Device Package: Mini MELF Part Status: Active Current - Peak Output: 2 A |
auf Bestellung 129829 Stücke: Lieferzeit 21-28 Tag (e) |
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TMMDB3 | STMicroelectronics |
Description: DIAC 28-36V 2A MINIMELF Packaging: Tape & Reel (TR) Package / Case: DO-213AA Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Breakover: 28 ~ 36V Current - Breakover: 50 µA Supplier Device Package: Mini MELF Part Status: Active Current - Peak Output: 2 A |
auf Bestellung 122500 Stücke: Lieferzeit 21-28 Tag (e) |
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TS420-600B-TR | STMicroelectronics |
Description: SCR 600V 4A DPAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Current - On State (It (AV)) (Max): 2.5 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 600 V |
auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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TS420-600B-TR | STMicroelectronics |
Description: SCR 600V 4A DPAK Packaging: Cut Tape (CT) Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 5 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A Current - On State (It (AV)) (Max): 2.5 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: DPAK Part Status: Active Current - On State (It (RMS)) (Max): 4 A Voltage - Off State: 600 V |
auf Bestellung 18985 Stücke: Lieferzeit 21-28 Tag (e) |
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TYN1225RG | STMicroelectronics |
Description: SCR 1.2KV 25A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.2 kV |
auf Bestellung 10573 Stücke: Lieferzeit 21-28 Tag (e) |
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TYN225RG | STMicroelectronics |
Description: SCR 200V 25A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A Current - On State (It (AV)) (Max): 16 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 200 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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TYN610RG | STMicroelectronics |
Description: SCR 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 15 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A Current - On State (It (AV)) (Max): 6.4 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 10 A Voltage - Off State: 600 V |
auf Bestellung 1832 Stücke: Lieferzeit 21-28 Tag (e) |
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USB6B1RL | STMicroelectronics |
Description: TVS DIODE 5.25VWM 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Voltage - Reverse Standoff (Typ): 5.25V Supplier Device Package: 8-SOIC Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 500W Power Line Protection: Yes Part Status: Active |
auf Bestellung 20229 Stücke: Lieferzeit 21-28 Tag (e) |
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USB6B1RL | STMicroelectronics |
Description: TVS DIODE 5.25VWM 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Voltage - Reverse Standoff (Typ): 5.25V Supplier Device Package: 8-SOIC Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 500W Power Line Protection: Yes Part Status: Active |
auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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USBUF01P6 | STMicroelectronics |
Description: FILTER RC(PI) 33 OHM/47PF SMD Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 33Ohms, C = 47pF Height: 0.024" (0.60mm) Attenuation Value: -25dB @ 900MHz Filter Order: 2nd Applications: USB Technology: RC (Pi) Resistance - Channel (Ohms): 33 ESD Protection: Yes Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
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USBUF01P6 | STMicroelectronics |
Description: FILTER RC(PI) 33 OHM/47PF SMD Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 33Ohms, C = 47pF Height: 0.024" (0.60mm) Attenuation Value: -25dB @ 900MHz Filter Order: 2nd Applications: USB Technology: RC (Pi) Resistance - Channel (Ohms): 33 ESD Protection: Yes Part Status: Obsolete Number of Channels: 2 |
Produkt ist nicht verfügbar |
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VIPER100SP13TR | STMicroelectronics |
Description: IC OFFLINE SW FLBACK 10POWERSO Packaging: Tape & Reel (TR) Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Frequency - Switching: Up to 200kHz Internal Switch(s): Yes Voltage - Breakdown: 620V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 15V Supplier Device Package: 10-PowerSO Fault Protection: Current Limiting, Over Temperature Voltage - Start Up: 11 V Control Features: EN, Frequency Control, Soft Start Part Status: Obsolete Power (Watts): 100 W |
Produkt ist nicht verfügbar |
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VIPER100(022Y) | STMicroelectronics |
Description: IC OFFLIN CONV FLBACK 5PENTAWATT Packaging: Tube Package / Case: Pentawatt-5 HV (Bent and Staggered Leads) Mounting Type: Surface Mount Frequency - Switching: Up to 200kHz Internal Switch(s): Yes Voltage - Breakdown: 620V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 15V Supplier Device Package: 5-PENTAWATT Fault Protection: Current Limiting, Over Temperature Voltage - Start Up: 11 V Control Features: EN, Frequency Control, Soft Start Part Status: Obsolete Power (Watts): 100 W |
Produkt ist nicht verfügbar |
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VIPER22ADIP | STMicroelectronics |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TC) Frequency - Switching: 60kHz Internal Switch(s): Yes Voltage - Breakdown: 730V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 38V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Part Status: Obsolete Power (Watts): 12 W |
Produkt ist nicht verfügbar |
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VIPER22AS | STMicroelectronics |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TC) Frequency - Switching: 60kHz Internal Switch(s): Yes Voltage - Breakdown: 730V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 38V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 14.5 V Part Status: Obsolete Power (Watts): 7 W |
Produkt ist nicht verfügbar |
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VIPER53DIP | STMicroelectronics |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TC) Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 620V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V Supplier Device Package: 8-DIP Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit Voltage - Start Up: 11.5 V Control Features: EN, Frequency Control, Soft Start Part Status: Obsolete Power (Watts): 50 W |
Produkt ist nicht verfügbar |
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VIPer53SP | STMicroelectronics |
Description: IC OFFLINE SW FLBACK 10POWERSO Packaging: Tube Package / Case: PowerSO-10 Exposed Bottom Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TC) Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 620V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V Supplier Device Package: 10-PowerSO Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit Voltage - Start Up: 11.5 V Control Features: EN, Frequency Control, Soft Start Part Status: Obsolete Power (Watts): 65 W |
Produkt ist nicht verfügbar |
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VN21(012Y) | STMicroelectronics |
Description: IC PWR DRVR N-CH 1:1 5PENTAWATT Packaging: Tube Features: Status Flag Package / Case: Pentawatt-5 (Straight Leads, Staggered Depth) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm (Max) Input Type: Non-Inverting Voltage - Load: 5.5V ~ 26V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Ratio - Input:Output: 1:1 Supplier Device Package: 5-PENTAWATT Fault Protection: Open Load Detect, Over Temperature |
Produkt ist nicht verfügbar |
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VN610SP13TR | STMicroelectronics | Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10 |
Produkt ist nicht verfügbar |
STTH1L06A |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 53733 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
35+ | 0.75 EUR |
100+ | 0.38 EUR |
500+ | 0.33 EUR |
1000+ | 0.26 EUR |
2000+ | 0.23 EUR |
STTH1L06RL |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.18 EUR |
10000+ | 0.16 EUR |
STTH1L06RL |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 27808 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
35+ | 0.75 EUR |
100+ | 0.38 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
2000+ | 0.19 EUR |
STTH1R06RL |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 23488 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.12 EUR |
27+ | 0.97 EUR |
100+ | 0.68 EUR |
500+ | 0.53 EUR |
1000+ | 0.43 EUR |
2000+ | 0.38 EUR |
STTH1R06RL |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.36 EUR |
10000+ | 0.34 EUR |
STTH3006DPI |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Description: DIODE GEN PURP 600V 30A DOP3I
Packaging: Tube
Package / Case: DOP3I-2 Insulated (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DOP3I
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Produkt ist nicht verfügbar
STTH3L06 |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 20400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
600+ | 1.01 EUR |
1200+ | 0.86 EUR |
3000+ | 0.76 EUR |
6000+ | 0.72 EUR |
15000+ | 0.67 EUR |
STTH3L06 |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
auf Bestellung 1015 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2 EUR |
15+ | 1.74 EUR |
100+ | 1.2 EUR |
STTH506DTI |
Hersteller: STMicroelectronics
Description: DIODE GP 600V 5A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 5 A
Current - Reverse Leakage @ Vr: 6 µA @ 600 V
Description: DIODE GP 600V 5A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 5 A
Current - Reverse Leakage @ Vr: 6 µA @ 600 V
auf Bestellung 671 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.72 EUR |
50+ | 2.98 EUR |
100+ | 2.46 EUR |
500+ | 2.08 EUR |
STTH5L06B-TR |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 22698 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.59 EUR |
10+ | 2.92 EUR |
100+ | 2.27 EUR |
500+ | 1.92 EUR |
1000+ | 1.57 EUR |
STTH5L06B-TR |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.48 EUR |
5000+ | 1.4 EUR |
12500+ | 1.34 EUR |
STTH5R06FP |
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Description: DIODE GEN PURP 600V 5A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 589 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.11 EUR |
50+ | 1.69 EUR |
100+ | 1.34 EUR |
500+ | 1.14 EUR |
STTH806DTI |
Hersteller: STMicroelectronics
Description: DIODE GP 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GP 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1708 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.8 EUR |
50+ | 7.76 EUR |
100+ | 6.65 EUR |
500+ | 5.92 EUR |
1000+ | 5.06 EUR |
STV160NF02LT4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
Description: MOSFET N-CH 20V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
Produkt ist nicht verfügbar
STV160NF03LT4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 30V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Produkt ist nicht verfügbar
STW10NK60Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 421 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.78 EUR |
30+ | 7.74 EUR |
120+ | 6.63 EUR |
STW10NK80Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Description: MOSFET N-CH 800V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
auf Bestellung 637 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.04 EUR |
30+ | 9.54 EUR |
120+ | 8.17 EUR |
510+ | 7.27 EUR |
STW11NK100Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 8.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 1000V 8.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
STW12NK80Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 10.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Description: MOSFET N-CH 800V 10.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
auf Bestellung 546 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.35 EUR |
30+ | 11.39 EUR |
120+ | 9.76 EUR |
510+ | 8.68 EUR |
STW13NK60Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar
STW14NK50Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 54 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.32 EUR |
30+ | 8.19 EUR |
STW14NM50 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 550V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
STW15NK50Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
auf Bestellung 582 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.12 EUR |
30+ | 9.61 EUR |
120+ | 8.23 EUR |
510+ | 7.32 EUR |
STW20NK50Z |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 540 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.07 EUR |
30+ | 7.2 EUR |
120+ | 6.17 EUR |
510+ | 5.48 EUR |
STW20NM50 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Description: MOSFET N-CH 550V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
STW20NM60 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 544 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.66 EUR |
30+ | 11.71 EUR |
120+ | 10.47 EUR |
510+ | 9.24 EUR |
STW26NM50 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Description: MOSFET N-CH 500V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 362 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 25.92 EUR |
30+ | 21 EUR |
120+ | 19.76 EUR |
STW26NM60 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
STW80NF06 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Description: MOSFET N-CH 60V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Produkt ist nicht verfügbar
STY140NS10 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 140A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET N-CH 100V 140A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.65 EUR |
T410-600B-TR |
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.79 EUR |
T410-600B-TR |
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
auf Bestellung 3217 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.08 EUR |
15+ | 1.8 EUR |
100+ | 1.25 EUR |
500+ | 1.04 EUR |
1000+ | 0.89 EUR |
T835-600B-TR |
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 22500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.9 EUR |
5000+ | 0.86 EUR |
12500+ | 0.82 EUR |
T835-600B-TR |
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 25348 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.18 EUR |
15+ | 1.78 EUR |
100+ | 1.38 EUR |
500+ | 1.17 EUR |
1000+ | 0.96 EUR |
TIP127FP |
Hersteller: STMicroelectronics
Description: TRANS PNP DARL 100V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP DARL 100V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
TMMBAT42FILM |
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 13874 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.12 EUR |
5000+ | 0.11 EUR |
12500+ | 0.09 EUR |
TMMBAT42FILM |
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 14547 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 0.7 EUR |
55+ | 0.48 EUR |
112+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.13 EUR |
TMMBAT46FILM |
Hersteller: STMicroelectronics
Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.13 EUR |
5000+ | 0.12 EUR |
TMMBAT46FILM |
Hersteller: STMicroelectronics
Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 7319 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.81 EUR |
48+ | 0.55 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.15 EUR |
TMMBAT48FILM |
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.3 EUR |
5000+ | 0.29 EUR |
12500+ | 0.26 EUR |
TMMBAT48FILM |
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 14294 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.12 EUR |
31+ | 0.86 EUR |
100+ | 0.52 EUR |
500+ | 0.48 EUR |
1000+ | 0.32 EUR |
TMMDB3 |
Hersteller: STMicroelectronics
Description: DIAC 28-36V 2A MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
Description: DIAC 28-36V 2A MINIMELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
auf Bestellung 129829 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.81 EUR |
46+ | 0.57 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
TMMDB3 |
Hersteller: STMicroelectronics
Description: DIAC 28-36V 2A MINIMELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
Description: DIAC 28-36V 2A MINIMELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
auf Bestellung 122500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.18 EUR |
5000+ | 0.17 EUR |
TS420-600B-TR |
Hersteller: STMicroelectronics
Description: SCR 600V 4A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - On State (It (AV)) (Max): 2.5 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Description: SCR 600V 4A DPAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - On State (It (AV)) (Max): 2.5 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.4 EUR |
5000+ | 1.34 EUR |
12500+ | 1.27 EUR |
TS420-600B-TR |
Hersteller: STMicroelectronics
Description: SCR 600V 4A DPAK
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - On State (It (AV)) (Max): 2.5 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
Description: SCR 600V 4A DPAK
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - On State (It (AV)) (Max): 2.5 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
auf Bestellung 18985 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.41 EUR |
10+ | 2.78 EUR |
100+ | 2.16 EUR |
500+ | 1.83 EUR |
1000+ | 1.49 EUR |
TYN1225RG |
Hersteller: STMicroelectronics
Description: SCR 1.2KV 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
auf Bestellung 10573 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.77 EUR |
50+ | 4.63 EUR |
100+ | 3.81 EUR |
500+ | 3.22 EUR |
1000+ | 2.73 EUR |
2000+ | 2.6 EUR |
5000+ | 2.5 EUR |
TYN225RG |
Hersteller: STMicroelectronics
Description: SCR 200V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 200 V
Description: SCR 200V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.69 EUR |
50+ | 4.57 EUR |
100+ | 3.76 EUR |
500+ | 3.18 EUR |
1000+ | 2.7 EUR |
TYN610RG |
Hersteller: STMicroelectronics
Description: SCR 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
Current - On State (It (AV)) (Max): 6.4 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 600 V
Description: SCR 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
Current - On State (It (AV)) (Max): 6.4 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 600 V
auf Bestellung 1832 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.8 EUR |
50+ | 3.05 EUR |
100+ | 2.51 EUR |
500+ | 2.13 EUR |
1000+ | 1.8 EUR |
USB6B1RL |
Hersteller: STMicroelectronics
Description: TVS DIODE 5.25VWM 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.25VWM 8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 20229 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.03 EUR |
16+ | 1.66 EUR |
100+ | 1.29 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
USB6B1RL |
Hersteller: STMicroelectronics
Description: TVS DIODE 5.25VWM 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 5.25VWM 8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.84 EUR |
5000+ | 0.8 EUR |
12500+ | 0.76 EUR |
USBUF01P6 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 33 OHM/47PF SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, C = 47pF
Height: 0.024" (0.60mm)
Attenuation Value: -25dB @ 900MHz
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 33
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 2
Description: FILTER RC(PI) 33 OHM/47PF SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, C = 47pF
Height: 0.024" (0.60mm)
Attenuation Value: -25dB @ 900MHz
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 33
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
USBUF01P6 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 33 OHM/47PF SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, C = 47pF
Height: 0.024" (0.60mm)
Attenuation Value: -25dB @ 900MHz
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 33
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 2
Description: FILTER RC(PI) 33 OHM/47PF SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, C = 47pF
Height: 0.024" (0.60mm)
Attenuation Value: -25dB @ 900MHz
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 33
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
VIPER100SP13TR |
Hersteller: STMicroelectronics
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
Produkt ist nicht verfügbar
VIPER100(022Y) |
Hersteller: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
Produkt ist nicht verfügbar
VIPER22ADIP |
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 12 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 12 W
Produkt ist nicht verfügbar
VIPER22AS |
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 7 W
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
VIPER53DIP |
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 50 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 50 W
Produkt ist nicht verfügbar
VIPer53SP |
Hersteller: STMicroelectronics
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 65 W
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 65 W
Produkt ist nicht verfügbar
VN21(012Y) |
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CH 1:1 5PENTAWATT
Packaging: Tube
Features: Status Flag
Package / Case: Pentawatt-5 (Straight Leads, Staggered Depth)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-PENTAWATT
Fault Protection: Open Load Detect, Over Temperature
Description: IC PWR DRVR N-CH 1:1 5PENTAWATT
Packaging: Tube
Features: Status Flag
Package / Case: Pentawatt-5 (Straight Leads, Staggered Depth)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: 5-PENTAWATT
Fault Protection: Open Load Detect, Over Temperature
Produkt ist nicht verfügbar
VN610SP13TR |
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Produkt ist nicht verfügbar