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STTH1L06A STTH1L06A STMicroelectronics en.CD00002694.pdf Description: DIODE STANDARD 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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STTH1L06RL STTH1L06RL STMicroelectronics en.CD00002694.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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STTH1L06RL STTH1L06RL STMicroelectronics en.CD00002694.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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STTH1R06RL STTH1R06RL STMicroelectronics en.CD00005135.pdf description Description: DIODE STANDARD 600V 1A DO41
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STTH1R06RL STTH1R06RL STMicroelectronics en.CD00005135.pdf description Description: DIODE STANDARD 600V 1A DO41
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTH3006DPI STTH3006DPI STMicroelectronics en.CD00003620.pdf Description: DIODE STANDARD 600V 30A DOP3I
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DOP3I
Current - Average Rectified (Io): 30A
Package / Case: DOP3I-2 Insulated (Straight Leads)
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Produkt ist nicht verfügbar
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STTH3L06 STTH3L06 STMicroelectronics en.CD00002695.pdf Description: DIODE STANDARD 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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STTH3L06 STTH3L06 STMicroelectronics en.CD00002695.pdf Description: DIODE STANDARD 600V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
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STTH506DTI STTH506DTI STMicroelectronics en.CD00003623.pdf Description: DIODE STD 600V 5A TO220AC INS
Current - Reverse Leakage @ Vr: 6 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
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STTH5L06B-TR STTH5L06B-TR STMicroelectronics en.CD00002719.pdf Description: DIODE GEN PURP 600V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STTH5L06B-TR STTH5L06B-TR STMicroelectronics en.CD00002719.pdf Description: DIODE GEN PURP 600V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STTH5R06FP STTH5R06FP STMicroelectronics en.CD00002497.pdf description Description: DIODE STANDARD 600V 5A TO220FPAC
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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STTH806DTI STTH806DTI STMicroelectronics en.CD00003622.pdf description Description: DIODE STD 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 2032 Stücke:
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STV160NF02LT4 STV160NF02LT4 STMicroelectronics STV160NF02L.pdf Description: MOSFET N-CH 20V 160A 10POWERSO
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 10-PowerSO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tape & Reel (TR)
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STV160NF03LT4 STV160NF03LT4 STMicroelectronics STV160NF03L.pdf Description: MOSFET N-CH 30V 160A 10POWERSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 10-PowerSO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Produkt ist nicht verfügbar
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STW10NK60Z STW10NK60Z STMicroelectronics en.CD00002815.pdf Description: MOSFET N-CH 600V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
auf Bestellung 607 Stücke:
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3+9.72 EUR
30+5.44 EUR
60+4.93 EUR
120+4.5 EUR
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STW10NK80Z STW10NK80Z STMicroelectronics en.CD00003020.pdf description Description: MOSFET N-CH 800V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
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STW11NK100Z STW11NK100Z STMicroelectronics en.CD00003426.pdf Description: MOSFET N-CH 1000V 8.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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STW12NK80Z STW12NK80Z STMicroelectronics en.CD00003379.pdf Description: MOSFET N-CH 800V 10.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
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STW13NK60Z STW13NK60Z STMicroelectronics en.CD00002816.pdf Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 440 Stücke:
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STW14NK50Z STW14NK50Z STMicroelectronics en.CD00002817.pdf description Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 340 Stücke:
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STW14NM50 STW14NM50 STMicroelectronics Description: MOSFET N-CH 550V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 175W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW15NK50Z STW15NK50Z STMicroelectronics en.CD00003043.pdf Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
auf Bestellung 561 Stücke:
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STW20NK50Z STW20NK50Z STMicroelectronics en.DM00052344.pdf Description: MOSFET N-CH 500V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 488 Stücke:
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2+10.91 EUR
30+6.16 EUR
60+5.59 EUR
120+5.11 EUR
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STW20NM50 STW20NM50 STMicroelectronics en.CD00002376.pdf Description: MOSFET N-CH 550V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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STW20NM60 STW20NM60 STMicroelectronics en.CD00002505.pdf Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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STW26NM50 STW26NM50 STMicroelectronics en.CD00002680.pdf Description: MOSFET N-CH 500V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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STW26NM60 STW26NM60 STMicroelectronics STW26NM60.pdf description Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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STW80NF06 STW80NF06 STMicroelectronics STx80NF06.pdf Description: MOSFET N-CH 60V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
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STY140NS10 STY140NS10 STMicroelectronics en.CD00002559.pdf Description: MOSFET N-CH 100V 140A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
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T410-600B-TR T410-600B-TR STMicroelectronics en.CD00002383.pdf Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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T410-600B-TR T410-600B-TR STMicroelectronics en.CD00002383.pdf Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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T835-600B-TR T835-600B-TR STMicroelectronics en.CD00002266.pdf Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
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T835-600B-TR T835-600B-TR STMicroelectronics en.CD00002266.pdf Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
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TIP127FP TIP127FP STMicroelectronics en.CD00001254.pdf Description: TRANS PNP DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TMMBAT42FILM TMMBAT42FILM STMicroelectronics en.CD00000814.pdf Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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TMMBAT42FILM TMMBAT42FILM STMicroelectronics en.CD00000814.pdf Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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TMMBAT46FILM TMMBAT46FILM STMicroelectronics en.CD00000815.pdf Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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TMMBAT46FILM TMMBAT46FILM STMicroelectronics en.CD00000815.pdf Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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TMMBAT48FILM TMMBAT48FILM STMicroelectronics en.CD00000816.pdf Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
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TMMBAT48FILM TMMBAT48FILM STMicroelectronics en.CD00000816.pdf Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Produkt ist nicht verfügbar
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TMMDB3 TMMDB3 STMicroelectronics en.CD00002348.pdf Description: DIAC/SIDAC 28-36V 2A MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
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TMMDB3 TMMDB3 STMicroelectronics en.CD00002348.pdf Description: DIAC/SIDAC 28-36V 2A MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
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TS420-600B-TR TS420-600B-TR STMicroelectronics en.CD00004921.pdf Description: SCR 600V 4A DPAK
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Part Status: Active
Supplier Device Package: DPAK
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
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TS420-600B-TR TS420-600B-TR STMicroelectronics en.CD00004921.pdf Description: SCR 600V 4A DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Part Status: Active
Supplier Device Package: DPAK
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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TYN1225RG TYN1225RG STMicroelectronics en.CD00002272.pdf Description: SCR 1.2KV 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
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TYN225RG TYN225RG STMicroelectronics TYN1225.pdf Description: SCR 200V 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 200 V
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TYN610RG TYN610RG STMicroelectronics en.CD00004900.pdf Description: SCR 600V 10A TO220AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 10 A
Part Status: Active
Supplier Device Package: TO-220
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 6.4 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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USB6B1RL USB6B1RL STMicroelectronics cd00001361.pdf Description: TVS DIODE 5.25VWM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
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USB6B1RL USB6B1RL STMicroelectronics cd00001361.pdf Description: TVS DIODE 5.25VWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
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USBUF01P6 USBUF01P6 STMicroelectronics USBUF01P6.pdf Description: FILTER RC(PI) 33 OHM/47PF SMD
Number of Channels: 2
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 33
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Attenuation Value: -25dB @ 900MHz
Height: 0.024" (0.60mm)
Values: R = 33Ohms, C = 47pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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USBUF01P6 USBUF01P6 STMicroelectronics USBUF01P6.pdf Description: FILTER RC(PI) 33 OHM/47PF SMD
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 33
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Attenuation Value: -25dB @ 900MHz
Height: 0.024" (0.60mm)
Values: R = 33Ohms, C = 47pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Number of Channels: 2
Produkt ist nicht verfügbar
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VIPER100SP13TR VIPER100SP13TR STMicroelectronics VIPER100_SP_A_ASP.pdf Description: IC OFFLINE SW FLBACK 10POWERSO
Power (Watts): 100 W
Part Status: Obsolete
Control Features: EN, Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Temperature
Supplier Device Package: 10-PowerSO
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 620V
Internal Switch(s): Yes
Frequency - Switching: Up to 200kHz
Mounting Type: Surface Mount
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VIPER100(022Y) VIPER100(022Y) STMicroelectronics VIPER100_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Power (Watts): 100 W
Part Status: Obsolete
Control Features: EN, Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Temperature
Supplier Device Package: 5-PENTAWATT
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 620V
Internal Switch(s): Yes
Frequency - Switching: Up to 200kHz
Mounting Type: Surface Mount
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Packaging: Tube
Produkt ist nicht verfügbar
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VIPER22ADIP VIPER22ADIP STMicroelectronics VIPER22A%28DIP%2CS%29.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 12 W
Produkt ist nicht verfügbar
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VIPER22AS VIPER22AS STMicroelectronics VIPER22A%28DIP%2CS%29.pdf Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
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VIPER53DIP VIPER53DIP STMicroelectronics VIPER53.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 50 W
Produkt ist nicht verfügbar
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VIPer53SP VIPer53SP STMicroelectronics VIPER53.pdf Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 65 W
Produkt ist nicht verfügbar
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VN21(012Y) VN21(012Y) STMicroelectronics VN21.pdf Description: IC PWR DRVR N-CH 1:1 5PENTAWATT
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: Pentawatt-5 (Straight Leads, Staggered Depth)
Features: Status Flag
Packaging: Tube
Fault Protection: Open Load Detect, Over Temperature
Supplier Device Package: 5-PENTAWATT
Ratio - Input:Output: 1:1
Current - Output (Max): 23A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 26V
Input Type: Non-Inverting
Rds On (Typ): 50mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Produkt ist nicht verfügbar
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VN610SP13TR VN610SP13TR STMicroelectronics en.CD00001614.pdf Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: 10-PowerSO
Ratio - Input:Output: 1:1
Current - Output (Max): 45A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 10mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: PowerSO-10 Exposed Bottom Pad
Features: Auto Restart
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTH1L06A en.CD00002694.pdf
STTH1L06A
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A SMA
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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STTH1L06RL en.CD00002694.pdf
STTH1L06RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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STTH1L06RL en.CD00002694.pdf
STTH1L06RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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STTH1R06RL description en.CD00005135.pdf
STTH1R06RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A DO41
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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STTH1R06RL description en.CD00005135.pdf
STTH1R06RL
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 1A DO41
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STTH3006DPI en.CD00003620.pdf
STTH3006DPI
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 30A DOP3I
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DOP3I
Current - Average Rectified (Io): 30A
Package / Case: DOP3I-2 Insulated (Straight Leads)
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Produkt ist nicht verfügbar
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STTH3L06 en.CD00002695.pdf
STTH3L06
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 3A DO201AD
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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600+0.29 EUR
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STTH3L06 en.CD00002695.pdf
STTH3L06
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 85 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
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STTH506DTI en.CD00003623.pdf
STTH506DTI
Hersteller: STMicroelectronics
Description: DIODE STD 600V 5A TO220AC INS
Current - Reverse Leakage @ Vr: 6 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
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STTH5L06B-TR en.CD00002719.pdf
STTH5L06B-TR
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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STTH5L06B-TR en.CD00002719.pdf
STTH5L06B-TR
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 5A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 95 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STTH5R06FP description en.CD00002497.pdf
STTH5R06FP
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 5A TO220FPAC
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAC
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
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STTH806DTI description en.CD00003622.pdf
STTH806DTI
Hersteller: STMicroelectronics
Description: DIODE STD 600V 8A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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STV160NF02LT4 STV160NF02L.pdf
STV160NF02LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 20V 160A 10POWERSO
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 10-PowerSO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tape & Reel (TR)
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STV160NF03LT4 STV160NF03L.pdf
STV160NF03LT4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 160A 10POWERSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 10-PowerSO
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±15V
Produkt ist nicht verfügbar
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STW10NK60Z en.CD00002815.pdf
STW10NK60Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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STW10NK80Z description en.CD00003020.pdf
STW10NK80Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 4.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
auf Bestellung 456 Stücke:
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STW11NK100Z en.CD00003426.pdf
STW11NK100Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 8.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 4.15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 573 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.08 EUR
30+8.1 EUR
60+7.39 EUR
120+6.78 EUR
510+5.82 EUR
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STW12NK80Z en.CD00003379.pdf
STW12NK80Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 10.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.25A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.28 EUR
30+7.6 EUR
120+6.35 EUR
510+5.44 EUR
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STW13NK60Z en.CD00002816.pdf
STW13NK60Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.69 EUR
30+6.62 EUR
60+6.01 EUR
120+5.5 EUR
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STW14NK50Z description en.CD00002817.pdf
STW14NK50Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
30+5.78 EUR
60+5.25 EUR
120+4.78 EUR
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STW14NM50
STW14NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 175W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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STW15NK50Z en.CD00003043.pdf
STW15NK50Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.02 EUR
30+6.25 EUR
120+5.2 EUR
510+4.44 EUR
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STW20NK50Z en.DM00052344.pdf
STW20NK50Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.91 EUR
30+6.16 EUR
60+5.59 EUR
120+5.11 EUR
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STW20NM50 en.CD00002376.pdf
STW20NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Produkt ist nicht verfügbar
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STW20NM60 en.CD00002505.pdf
STW20NM60
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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STW26NM50 en.CD00002680.pdf
STW26NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.8 EUR
30+13.13 EUR
120+11.22 EUR
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STW26NM60 description STW26NM60.pdf
STW26NM60
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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STW80NF06 STx80NF06.pdf
STW80NF06
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Produkt ist nicht verfügbar
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STY140NS10 en.CD00002559.pdf
STY140NS10
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 140A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 600 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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T410-600B-TR en.CD00002383.pdf
T410-600B-TR
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.54 EUR
5000+0.49 EUR
Mindestbestellmenge: 2500 Stücke
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T410-600B-TR en.CD00002383.pdf
T410-600B-TR
Hersteller: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 31A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
auf Bestellung 5123 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.07 EUR
17+1.3 EUR
100+0.86 EUR
500+0.65 EUR
1000+0.6 EUR
Mindestbestellmenge: 11 Stücke
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T835-600B-TR en.CD00002266.pdf
T835-600B-TR
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.74 EUR
5000+0.68 EUR
7500+0.65 EUR
12500+0.62 EUR
17500+0.61 EUR
Mindestbestellmenge: 2500 Stücke
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T835-600B-TR en.CD00002266.pdf
T835-600B-TR
Hersteller: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Part Status: Active
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 25898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 8 Stücke
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TIP127FP en.CD00001254.pdf
TIP127FP
Hersteller: STMicroelectronics
Description: TRANS PNP DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TMMBAT42FILM en.CD00000814.pdf
TMMBAT42FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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TMMBAT42FILM en.CD00000814.pdf
TMMBAT42FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 30V 200MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Produkt ist nicht verfügbar
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TMMBAT46FILM en.CD00000815.pdf
TMMBAT46FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
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TMMBAT46FILM en.CD00000815.pdf
TMMBAT46FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOT 100V 150MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
66+0.32 EUR
105+0.2 EUR
Mindestbestellmenge: 40 Stücke
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TMMBAT48FILM en.CD00000816.pdf
TMMBAT48FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Produkt ist nicht verfügbar
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TMMBAT48FILM en.CD00000816.pdf
TMMBAT48FILM
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 40V 350MA MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
Produkt ist nicht verfügbar
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TMMDB3 en.CD00002348.pdf
TMMDB3
Hersteller: STMicroelectronics
Description: DIAC/SIDAC 28-36V 2A MINI MELF
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
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AnzahlPrivatkunde
23+0.94 EUR
37+0.57 EUR
100+0.37 EUR
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TMMDB3 en.CD00002348.pdf
TMMDB3
Hersteller: STMicroelectronics
Description: DIAC/SIDAC 28-36V 2A MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 50 µA
Supplier Device Package: Mini MELF
Part Status: Active
Current - Peak Output: 2 A
auf Bestellung 390 Stücke:
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TS420-600B-TR en.CD00004921.pdf
TS420-600B-TR
Hersteller: STMicroelectronics
Description: SCR 600V 4A DPAK
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Part Status: Active
Supplier Device Package: DPAK
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
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2500+0.69 EUR
5000+0.64 EUR
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TS420-600B-TR en.CD00004921.pdf
TS420-600B-TR
Hersteller: STMicroelectronics
Description: SCR 600V 4A DPAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 4 A
Part Status: Active
Supplier Device Package: DPAK
Current - Off State (Max): 5 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Current - On State (It (AV)) (Max): 2.5 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Hold (Ih) (Max): 5 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Sensitive Gate
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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8+2.62 EUR
13+1.64 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.77 EUR
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TYN1225RG en.CD00002272.pdf
TYN1225RG
Hersteller: STMicroelectronics
Description: SCR 1.2KV 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
auf Bestellung 4860 Stücke:
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AnzahlPrivatkunde
3+7.31 EUR
50+3.72 EUR
100+3.37 EUR
500+2.88 EUR
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TYN225RG TYN1225.pdf
TYN225RG
Hersteller: STMicroelectronics
Description: SCR 200V 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A, 260A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 200 V
auf Bestellung 299 Stücke:
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AnzahlPrivatkunde
5+4.71 EUR
50+2.32 EUR
100+2.08 EUR
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TYN610RG en.CD00004900.pdf
TYN610RG
Hersteller: STMicroelectronics
Description: SCR 600V 10A TO220AB
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 10 A
Part Status: Active
Supplier Device Package: TO-220
Current - Off State (Max): 10 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 6.4 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Hold (Ih) (Max): 30 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1628 Stücke:
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8+2.7 EUR
50+1.27 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
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USB6B1RL cd00001361.pdf
USB6B1RL
Hersteller: STMicroelectronics
Description: TVS DIODE 5.25VWM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 10422 Stücke:
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AnzahlPrivatkunde
8+2.68 EUR
13+1.69 EUR
50+1.26 EUR
100+1.12 EUR
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USB6B1RL cd00001361.pdf
USB6B1RL
Hersteller: STMicroelectronics
Description: TVS DIODE 5.25VWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Active
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
2500+0.71 EUR
7500+0.63 EUR
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USBUF01P6 USBUF01P6.pdf
USBUF01P6
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 33 OHM/47PF SMD
Number of Channels: 2
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 33
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Attenuation Value: -25dB @ 900MHz
Height: 0.024" (0.60mm)
Values: R = 33Ohms, C = 47pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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USBUF01P6 USBUF01P6.pdf
USBUF01P6
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 33 OHM/47PF SMD
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 33
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Attenuation Value: -25dB @ 900MHz
Height: 0.024" (0.60mm)
Values: R = 33Ohms, C = 47pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.065" L x 0.065" W (1.66mm x 1.65mm)
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Number of Channels: 2
Produkt ist nicht verfügbar
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VIPER100SP13TR VIPER100_SP_A_ASP.pdf
VIPER100SP13TR
Hersteller: STMicroelectronics
Description: IC OFFLINE SW FLBACK 10POWERSO
Power (Watts): 100 W
Part Status: Obsolete
Control Features: EN, Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Temperature
Supplier Device Package: 10-PowerSO
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 620V
Internal Switch(s): Yes
Frequency - Switching: Up to 200kHz
Mounting Type: Surface Mount
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VIPER100(022Y) VIPER100_SP_A_ASP.pdf
VIPER100(022Y)
Hersteller: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Power (Watts): 100 W
Part Status: Obsolete
Control Features: EN, Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Temperature
Supplier Device Package: 5-PENTAWATT
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 620V
Internal Switch(s): Yes
Frequency - Switching: Up to 200kHz
Mounting Type: Surface Mount
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Packaging: Tube
Produkt ist nicht verfügbar
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VIPER22ADIP VIPER22A%28DIP%2CS%29.pdf
VIPER22ADIP
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 12 W
Produkt ist nicht verfügbar
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VIPER22AS VIPER22A%28DIP%2CS%29.pdf
VIPER22AS
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 730V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 38V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
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VIPER53DIP VIPER53.pdf
VIPER53DIP
Hersteller: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 50 W
Produkt ist nicht verfügbar
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VIPer53SP VIPER53.pdf
VIPer53SP
Hersteller: STMicroelectronics
Description: IC OFFLINE SW FLBACK 10POWERSO
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TC)
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.4V ~ 19V
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting, Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 11.5 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 65 W
Produkt ist nicht verfügbar
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VN21(012Y) VN21.pdf
VN21(012Y)
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CH 1:1 5PENTAWATT
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: Pentawatt-5 (Straight Leads, Staggered Depth)
Features: Status Flag
Packaging: Tube
Fault Protection: Open Load Detect, Over Temperature
Supplier Device Package: 5-PENTAWATT
Ratio - Input:Output: 1:1
Current - Output (Max): 23A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 26V
Input Type: Non-Inverting
Rds On (Typ): 50mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Produkt ist nicht verfügbar
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VN610SP13TR en.CD00001614.pdf
VN610SP13TR
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: 10-PowerSO
Ratio - Input:Output: 1:1
Current - Output (Max): 45A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 10mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: PowerSO-10 Exposed Bottom Pad
Features: Auto Restart
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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