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STW14NM50



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Technische Details STW14NM50

Description: MOSFET N-CH 550V 14A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 175W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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STW14NM50 STW14NM50 Hersteller : STMicroelectronics Description: MOSFET N-CH 550V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 175W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STW14NM50 STW14NM50 Hersteller : STMicroelectronics stmicroelectronics_cd00002126-1204930.pdf MOSFET N-Ch 500 Volt 14 Amp
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