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STFW42N60M2-EP STFW42N60M2-EP STMicroelectronics en.DM00156720.pdf Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V
Produkt ist nicht verfügbar
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STW3N170 STW3N170 STMicroelectronics stw3n170.pdf Description: MOSFET N-CH 1700V 2.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.01 EUR
30+4.43 EUR
120+3.96 EUR
510+3.88 EUR
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STW56N65DM2 STW56N65DM2 STMicroelectronics STW56N65DM2.pdf Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Produkt ist nicht verfügbar
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STW18N60DM2 STW18N60DM2 STMicroelectronics STW18N60DM2.pdf Description: MOSFET N-CH 600V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 473 Stücke:
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4+5.51 EUR
30+3.01 EUR
120+2.46 EUR
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STW56N60DM2 STW56N60DM2 STMicroelectronics STW56N60DM2.pdf Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.3 EUR
30+7.16 EUR
120+6.03 EUR
510+5.33 EUR
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STP43N60DM2 STP43N60DM2 STMicroelectronics STP43N60DM2.pdf Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 119 Stücke:
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2+9.08 EUR
50+4.8 EUR
100+4.39 EUR
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STW43N60DM2 STW43N60DM2 STMicroelectronics STW43N60DM2.pdf Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.55 EUR
30+6.68 EUR
120+5.61 EUR
510+4.87 EUR
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STF43N60DM2 STF43N60DM2 STMicroelectronics STF43N60DM2.pdf Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 288 Stücke:
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2+9.08 EUR
50+4.8 EUR
100+4.39 EUR
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STF12N50DM2 STF12N50DM2 STMicroelectronics en.DM00130088.pdf Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 407 Stücke:
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5+4 EUR
50+1.97 EUR
100+1.77 EUR
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STP28N60DM2 STP28N60DM2 STMicroelectronics ST%28B%2CP%2CW%2928N60DM2.pdf Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.65 EUR
50+3.43 EUR
100+3.11 EUR
500+2.56 EUR
Mindestbestellmenge: 3
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STW28N60DM2 STW28N60DM2 STMicroelectronics ST%28B%2CP%2CW%2928N60DM2.pdf Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.08 EUR
30+3.94 EUR
120+3.25 EUR
510+2.74 EUR
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STF28N60DM2 STF28N60DM2 STMicroelectronics STF28N60DM2.pdf Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
50+2.97 EUR
100+2.69 EUR
500+2.21 EUR
Mindestbestellmenge: 4
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STP33N60DM2 STP33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.27 EUR
50+3.77 EUR
100+3.43 EUR
500+2.84 EUR
1000+2.65 EUR
2000+2.64 EUR
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STW33N60DM2 STW33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.03 EUR
30+5.12 EUR
120+4.26 EUR
Mindestbestellmenge: 2
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STF33N60DM2 STF33N60DM2 STMicroelectronics stf33n60dm2.pdf Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 3318 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.39 EUR
50+3.31 EUR
100+3.02 EUR
500+2.74 EUR
Mindestbestellmenge: 3
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STF35N60DM2 STF35N60DM2 STMicroelectronics STF35N60DM2.pdf Description: MOSFET N-CH 600V 28A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.61 EUR
50+4.53 EUR
100+4.14 EUR
500+3.45 EUR
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STP35N60DM2 STP35N60DM2 STMicroelectronics STP35N60DM2.pdf Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.83 EUR
50+3.52 EUR
100+3.2 EUR
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STB18N60DM2 STB18N60DM2 STMicroelectronics STB18N60DM2.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
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STD12N50DM2 STD12N50DM2 STMicroelectronics en.DM00129953.pdf Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Produkt ist nicht verfügbar
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STB28N60DM2 STB28N60DM2 STMicroelectronics ST%28B%2CP%2CW%2928N60DM2.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
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STB33N60DM2 STB33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Produkt ist nicht verfügbar
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STB35N60DM2 STB35N60DM2 STMicroelectronics STB35N60DM2.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Produkt ist nicht verfügbar
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STL19N60DM2 STL19N60DM2 STMicroelectronics STL19N60DM2.pdf Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar
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STB18N60DM2 STB18N60DM2 STMicroelectronics STB18N60DM2.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
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STD12N50DM2 STD12N50DM2 STMicroelectronics en.DM00129953.pdf Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
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STB28N60DM2 STB28N60DM2 STMicroelectronics ST%28B%2CP%2CW%2928N60DM2.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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STB33N60DM2 STB33N60DM2 STMicroelectronics ST%28B%2CP%2CW%2933N60DM2.pdf Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
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STB35N60DM2 STB35N60DM2 STMicroelectronics STB35N60DM2.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
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LCP154DJF LCP154DJF STMicroelectronics LCP154DJF.pdf Description: THYRISTOR 400A 8-POWERVDFN
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LCP154DJF LCP154DJF STMicroelectronics LCP154DJF.pdf Description: THYRISTOR 400A 8-POWERVDFN
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TSX712IDT TSX712IDT STMicroelectronics en.DM00108580.pdf Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
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TSX7192IDT TSX7192IDT STMicroelectronics en.DM00148513.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
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TSB572IST TSB572IST STMicroelectronics tsb571.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
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LSM6DS3HTR LSM6DS3HTR STMicroelectronics Description: IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 14-LGA (2.5x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TSX564IYPT TSX564IYPT STMicroelectronics en.DM00056850.pdf Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Produkt ist nicht verfügbar
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TSZ124IYPT TSZ124IYPT STMicroelectronics en.DM00062815.pdf Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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TSX7192IYST TSX7192IYST STMicroelectronics en.DM00148513.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
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TSX712IDT TSX712IDT STMicroelectronics en.DM00108580.pdf Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
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TSX7192IDT TSX7192IDT STMicroelectronics en.DM00148513.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
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TSB572IST TSB572IST STMicroelectronics tsb571.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
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TSX564IYPT TSX564IYPT STMicroelectronics en.DM00056850.pdf Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
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TSZ124IYPT TSZ124IYPT STMicroelectronics en.DM00062815.pdf Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
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TSX7192IYST TSX7192IYST STMicroelectronics en.DM00148513.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
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EMIF01-SMIC01F2 STMicroelectronics Description: FILTER ESD SMD
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EMIF01-TV01F3 STMicroelectronics CD00090349.pdf Description: IC EMI FILTER 1LINE FLIPCHIP
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EMIF02-SPK01C2 STMicroelectronics CD00151055.pdf Description: IC EMI FILTER 2LINE FLIPCHIP
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EMIF02-SPK01F2 STMicroelectronics Description: FILTER RC(PI) 10 OHM/200PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Size / Dimension: 0.058" L x 0.042" W (1.47mm x 1.07mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 200pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2
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EMIF06-10006C2 STMicroelectronics CD00146038.pdf Description: IC EMI FILTER 6LINE FLIPCHIP
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EMIF06-VID01C2 STMicroelectronics Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-WFBGA, FCBGA
Size / Dimension: 0.115" L x 0.051" W (2.92mm x 1.29mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF (Total)
Height: 0.030" (0.76mm)
Attenuation Value: -40dB @ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
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EMIF10-LCD01C2 STMicroelectronics en.CD00065993.pdf Description: FILTER RC(PI) 100 OHM/28PF SMD
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STEVAL-MET001V1 STEVAL-MET001V1 STMicroelectronics en.DM00263492.pdf Description: DIL24 ADAPTER BOARD LPS22HB
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: LPS22HB
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 260 ~ 1260 hPa
Part Status: Active
Function: Pressure
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
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STEVAL-ILL084V1 STEVAL-ILL084V1 STMicroelectronics en.DM00264103.pdf Description: EVAL BOARD FOR LED6000
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STEVAL-ILL077V1 STEVAL-ILL077V1 STMicroelectronics en.DM00179358.pdf Description: EVAL BOARD FOR STNRG388A
Packaging: Bulk
Features: Dimmable
Voltage - Input: 48V ~ 56V
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
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STEVAL-ILD004V2 STEVAL-ILD004V2 STMicroelectronics en.CD00226640.pdf Description: EVAL BRD STGF10NC60KD TS820-600
Packaging: Bulk
Function: Dimmer
Type: Opto/Lighting
Utilized IC / Part: STGF10NC60KD, TS820-600
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-IDI005V1 STEVAL-IDI005V1 STMicroelectronics en.DM00264395.pdf Description: EVAL BOARD FOR SP1ML-868
Packaging: Bulk
For Use With/Related Products: SP1ML-868
Frequency: 868MHz
Type: Transceiver
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: SP1ML-868
Produkt ist nicht verfügbar
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STEVAL-ISA185V1 STEVAL-ISA185V1 STMicroelectronics en.DM00264203.pdf Description: EVAL BOARD FOR A6985F3V3
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.43 EUR
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STEVAL-ISA186V1 STEVAL-ISA186V1 STMicroelectronics en.DM00265282.pdf Description: EVAL BOARD FOR A6985F5V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.47 EUR
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STEVAL-ISA187V1 STEVAL-ISA187V1 STMicroelectronics en.DM00265662.pdf Description: EVAL BOARD FOR A6985F
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.42 EUR
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STEVAL-MKI170V1 STEVAL-MKI170V1 STMicroelectronics en.DM00150114.pdf Description: DIL24 ADAPTER BOARD IIS328DQ
Packaging: Bulk
Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit
Interface: I2C, Serial, SPI
Voltage - Supply: 2.16V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: IIS328DQ
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g
Part Status: Active
Function: Accelerometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.33 EUR
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STEVAL-IHT008V1 STEVAL-IHT008V1 STMicroelectronics en.DM00265649.pdf Description: LOW STANDBY LOSS FRONT-END BOARD
Packaging: Bulk
Function: *
Type: Power Management
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+371.8 EUR
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STFW42N60M2-EP en.DM00156720.pdf
STFW42N60M2-EP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V
Produkt ist nicht verfügbar
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STW3N170 stw3n170.pdf
STW3N170
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.01 EUR
30+4.43 EUR
120+3.96 EUR
510+3.88 EUR
Mindestbestellmenge: 2
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STW56N65DM2 STW56N65DM2.pdf
STW56N65DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Produkt ist nicht verfügbar
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STW18N60DM2 STW18N60DM2.pdf
STW18N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.51 EUR
30+3.01 EUR
120+2.46 EUR
Mindestbestellmenge: 4
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STW56N60DM2 STW56N60DM2.pdf
STW56N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
auf Bestellung 1178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.3 EUR
30+7.16 EUR
120+6.03 EUR
510+5.33 EUR
Mindestbestellmenge: 2
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STP43N60DM2 STP43N60DM2.pdf
STP43N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.08 EUR
50+4.8 EUR
100+4.39 EUR
Mindestbestellmenge: 2
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STW43N60DM2 STW43N60DM2.pdf
STW43N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.55 EUR
30+6.68 EUR
120+5.61 EUR
510+4.87 EUR
Mindestbestellmenge: 2
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STF43N60DM2 STF43N60DM2.pdf
STF43N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.08 EUR
50+4.8 EUR
100+4.39 EUR
Mindestbestellmenge: 2
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STF12N50DM2 en.DM00130088.pdf
STF12N50DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4 EUR
50+1.97 EUR
100+1.77 EUR
Mindestbestellmenge: 5
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STP28N60DM2 ST%28B%2CP%2CW%2928N60DM2.pdf
STP28N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
50+3.43 EUR
100+3.11 EUR
500+2.56 EUR
Mindestbestellmenge: 3
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STW28N60DM2 ST%28B%2CP%2CW%2928N60DM2.pdf
STW28N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.08 EUR
30+3.94 EUR
120+3.25 EUR
510+2.74 EUR
Mindestbestellmenge: 3
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STF28N60DM2 STF28N60DM2.pdf
STF28N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
50+2.97 EUR
100+2.69 EUR
500+2.21 EUR
Mindestbestellmenge: 4
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STP33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STP33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
50+3.77 EUR
100+3.43 EUR
500+2.84 EUR
1000+2.65 EUR
2000+2.64 EUR
Mindestbestellmenge: 3
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STW33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STW33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.03 EUR
30+5.12 EUR
120+4.26 EUR
Mindestbestellmenge: 2
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STF33N60DM2 stf33n60dm2.pdf
STF33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 3318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.39 EUR
50+3.31 EUR
100+3.02 EUR
500+2.74 EUR
Mindestbestellmenge: 3
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STF35N60DM2 STF35N60DM2.pdf
STF35N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.61 EUR
50+4.53 EUR
100+4.14 EUR
500+3.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STP35N60DM2 STP35N60DM2.pdf
STP35N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
50+3.52 EUR
100+3.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STB18N60DM2 STB18N60DM2.pdf
STB18N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
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STD12N50DM2 en.DM00129953.pdf
STD12N50DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Produkt ist nicht verfügbar
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STB28N60DM2 ST%28B%2CP%2CW%2928N60DM2.pdf
STB28N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
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STB33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STB33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Produkt ist nicht verfügbar
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STB35N60DM2 STB35N60DM2.pdf
STB35N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Produkt ist nicht verfügbar
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STL19N60DM2 STL19N60DM2.pdf
STL19N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar
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STB18N60DM2 STB18N60DM2.pdf
STB18N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 1167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+3.26 EUR
100+2.27 EUR
500+1.95 EUR
Mindestbestellmenge: 4
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STD12N50DM2 en.DM00129953.pdf
STD12N50DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.23 EUR
100+1.52 EUR
Mindestbestellmenge: 6
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STB28N60DM2 ST%28B%2CP%2CW%2928N60DM2.pdf
STB28N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+4.17 EUR
100+2.95 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STB33N60DM2 ST%28B%2CP%2CW%2933N60DM2.pdf
STB33N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
10+5.23 EUR
100+3.74 EUR
500+3.58 EUR
Mindestbestellmenge: 3
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STB35N60DM2 STB35N60DM2.pdf
STB35N60DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Produkt ist nicht verfügbar
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LCP154DJF LCP154DJF.pdf
LCP154DJF
Hersteller: STMicroelectronics
Description: THYRISTOR 400A 8-POWERVDFN
Produkt ist nicht verfügbar
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LCP154DJF LCP154DJF.pdf
LCP154DJF
Hersteller: STMicroelectronics
Description: THYRISTOR 400A 8-POWERVDFN
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
10+5.35 EUR
Mindestbestellmenge: 3
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TSX712IDT en.DM00108580.pdf
TSX712IDT
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.65 EUR
Mindestbestellmenge: 2500
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TSX7192IDT en.DM00148513.pdf
TSX7192IDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TSB572IST tsb571.pdf
TSB572IST
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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LSM6DS3HTR
LSM6DS3HTR
Hersteller: STMicroelectronics
Description: IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 14-LGA (2.5x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TSX564IYPT en.DM00056850.pdf
TSX564IYPT
Hersteller: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Produkt ist nicht verfügbar
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TSZ124IYPT en.DM00062815.pdf
TSZ124IYPT
Hersteller: STMicroelectronics
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.53 EUR
5000+2.48 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TSX7192IYST en.DM00148513.pdf
TSX7192IYST
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TSX712IDT en.DM00108580.pdf
TSX712IDT
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
10+2.4 EUR
25+2.18 EUR
100+1.95 EUR
250+1.84 EUR
500+1.77 EUR
1000+1.71 EUR
Mindestbestellmenge: 6
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TSX7192IDT en.DM00148513.pdf
TSX7192IDT
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.28 EUR
25+2.82 EUR
100+2.3 EUR
250+2.05 EUR
500+1.9 EUR
1000+1.77 EUR
Mindestbestellmenge: 4
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TSB572IST tsb571.pdf
TSB572IST
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
auf Bestellung 814 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
12+1.48 EUR
25+1.34 EUR
100+1.19 EUR
250+1.11 EUR
500+1.07 EUR
Mindestbestellmenge: 9
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TSX564IYPT en.DM00056850.pdf
TSX564IYPT
Hersteller: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Produkt ist nicht verfügbar
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TSZ124IYPT en.DM00062815.pdf
TSZ124IYPT
Hersteller: STMicroelectronics
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 11683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.56 EUR
25+3.26 EUR
100+2.93 EUR
250+2.78 EUR
500+2.68 EUR
1000+2.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TSX7192IYST en.DM00148513.pdf
TSX7192IYST
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+3.13 EUR
25+2.86 EUR
100+2.56 EUR
250+2.42 EUR
500+2.33 EUR
1000+2.26 EUR
Mindestbestellmenge: 5
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EMIF01-SMIC01F2
Hersteller: STMicroelectronics
Description: FILTER ESD SMD
Produkt ist nicht verfügbar
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EMIF01-TV01F3 CD00090349.pdf
Hersteller: STMicroelectronics
Description: IC EMI FILTER 1LINE FLIPCHIP
Produkt ist nicht verfügbar
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EMIF02-SPK01C2 CD00151055.pdf
Hersteller: STMicroelectronics
Description: IC EMI FILTER 2LINE FLIPCHIP
Produkt ist nicht verfügbar
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EMIF02-SPK01F2
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 10 OHM/200PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Size / Dimension: 0.058" L x 0.042" W (1.47mm x 1.07mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 200pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2
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EMIF06-10006C2 CD00146038.pdf
Hersteller: STMicroelectronics
Description: IC EMI FILTER 6LINE FLIPCHIP
Produkt ist nicht verfügbar
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EMIF06-VID01C2
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-WFBGA, FCBGA
Size / Dimension: 0.115" L x 0.051" W (2.92mm x 1.29mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF (Total)
Height: 0.030" (0.76mm)
Attenuation Value: -40dB @ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
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EMIF10-LCD01C2 en.CD00065993.pdf
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 100 OHM/28PF SMD
Produkt ist nicht verfügbar
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STEVAL-MET001V1 en.DM00263492.pdf
STEVAL-MET001V1
Hersteller: STMicroelectronics
Description: DIL24 ADAPTER BOARD LPS22HB
Packaging: Bulk
Interface: I2C, Serial, SPI
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: LPS22HB
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 260 ~ 1260 hPa
Part Status: Active
Function: Pressure
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.76 EUR
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STEVAL-ILL084V1 en.DM00264103.pdf
STEVAL-ILL084V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR LED6000
Produkt ist nicht verfügbar
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STEVAL-ILL077V1 en.DM00179358.pdf
STEVAL-ILL077V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STNRG388A
Packaging: Bulk
Features: Dimmable
Voltage - Input: 48V ~ 56V
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+239.5 EUR
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STEVAL-ILD004V2 en.CD00226640.pdf
STEVAL-ILD004V2
Hersteller: STMicroelectronics
Description: EVAL BRD STGF10NC60KD TS820-600
Packaging: Bulk
Function: Dimmer
Type: Opto/Lighting
Utilized IC / Part: STGF10NC60KD, TS820-600
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
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STEVAL-IDI005V1 en.DM00264395.pdf
STEVAL-IDI005V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR SP1ML-868
Packaging: Bulk
For Use With/Related Products: SP1ML-868
Frequency: 868MHz
Type: Transceiver
Supplied Contents: Board(s)
Contents: Board(s)
Utilized IC / Part: SP1ML-868
Produkt ist nicht verfügbar
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STEVAL-ISA185V1 en.DM00264203.pdf
STEVAL-ISA185V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR A6985F3V3
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.43 EUR
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STEVAL-ISA186V1 en.DM00265282.pdf
STEVAL-ISA186V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR A6985F5V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.47 EUR
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STEVAL-ISA187V1 en.DM00265662.pdf
STEVAL-ISA187V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR A6985F
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.42 EUR
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STEVAL-MKI170V1 en.DM00150114.pdf
STEVAL-MKI170V1
Hersteller: STMicroelectronics
Description: DIL24 ADAPTER BOARD IIS328DQ
Packaging: Bulk
Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit
Interface: I2C, Serial, SPI
Voltage - Supply: 2.16V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: IIS328DQ
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g
Part Status: Active
Function: Accelerometer
Type: Sensor
Contents: Board(s)
Platform: Professional MEMS Tool
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.33 EUR
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STEVAL-IHT008V1 en.DM00265649.pdf
STEVAL-IHT008V1
Hersteller: STMicroelectronics
Description: LOW STANDBY LOSS FRONT-END BOARD
Packaging: Bulk
Function: *
Type: Power Management
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+371.8 EUR
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