Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (131558) > Seite 407 nach 2193
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STW3N170 | STMicroelectronics |
 Description: MOSFET N-CH 1700V 2.6A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 607 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STW56N65DM2 | STMicroelectronics |
Description: MOSFET N-CH 650V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
STW18N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STP43N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STW43N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STF43N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
auf Bestellung 185 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STF12N50DM2 | STMicroelectronics |
Description: MOSFET N-CH 500V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STP28N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
STF28N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STP33N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STW33N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STF33N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 650V 24A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V |
auf Bestellung 3098 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STP35N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 28A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STB18N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
STD12N50DM2 | STMicroelectronics |
Description: MOSFET N-CH 500V 11A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
STB28N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
STB33N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
STB35N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 28A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
STL19N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 11A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 5.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
STB18N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
auf Bestellung 667 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STD12N50DM2 | STMicroelectronics |
Description: MOSFET N-CH 500V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V |
auf Bestellung 2431 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STB28N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STB33N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 24A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V |
auf Bestellung 818 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
STB35N60DM2 | STMicroelectronics |
Description: MOSFET N-CH 600V 28A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
LCP154DJF | STMicroelectronics |
Description: THYRISTOR 400A 8-POWERVDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
LCP154DJF | STMicroelectronics |
Description: THYRISTOR 400A 8-POWERVDFN |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
TSX712IDT | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 1.4V/µs Gain Bandwidth Product: 2.7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSX7192IDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 8.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-SOIC Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
TSB572IST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISO Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 380µA (x2 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 2.2 MHz Current - Input Bias: 8 nA Voltage - Input Offset: 1.5 mV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| LSM6DS3HTR | STMicroelectronics |
Description: IMU ACCEL/GYRO/TEMP I2C/SPI LGA Packaging: Tape & Reel (TR) Package / Case: 14-VFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis Supplier Device Package: 14-LGA (2.5x3) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
TSX564IYPT | STMicroelectronics |
Description: IC CMOS 4 CIRCUIT 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 250µA Slew Rate: 1.1V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 92 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSZ124IYPT | STMicroelectronics |
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C Current - Supply: 31µA (x4 Channels) Slew Rate: 0.19V/µs Gain Bandwidth Product: 400 kHz Current - Input Bias: 70 pA Voltage - Input Offset: 1 µV Supplier Device Package: 14-TSSOP Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 18 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
TSX7192IYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISO Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 8.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
TSX712IDT | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 1.4V/µs Gain Bandwidth Product: 2.7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
auf Bestellung 5687 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSX7192IDT | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 8.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-SOIC Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSB572IST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISO Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 380µA (x2 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 2.2 MHz Current - Input Bias: 8 nA Voltage - Input Offset: 1.5 mV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 36 V Qualification: AEC-Q100 |
auf Bestellung 814 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSX564IYPT | STMicroelectronics |
Description: IC CMOS 4 CIRCUIT 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 250µA Slew Rate: 1.1V/µs Gain Bandwidth Product: 900 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 1 mV Supplier Device Package: 14-TSSOP Part Status: Active Number of Circuits: 4 Current - Output / Channel: 92 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 16 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSZ124IYPT | STMicroelectronics |
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C Current - Supply: 31µA (x4 Channels) Slew Rate: 0.19V/µs Gain Bandwidth Product: 400 kHz Current - Input Bias: 70 pA Voltage - Input Offset: 1 µV Supplier Device Package: 14-TSSOP Grade: Automotive Part Status: Active Number of Circuits: 4 Current - Output / Channel: 18 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
auf Bestellung 10247 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
TSX7192IYST | STMicroelectronics |
Description: IC OPAMP GP 2 CIRCUIT 8MINISO Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 2.4V/µs Gain Bandwidth Product: 8.5 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-MiniSO Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
auf Bestellung 2786 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| EMIF01-SMIC01F2 | STMicroelectronics | Description: FILTER ESD SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EMIF01-TV01F3 | STMicroelectronics |
Description: IC EMI FILTER 1LINE FLIPCHIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EMIF02-SPK01C2 | STMicroelectronics |
Description: IC EMI FILTER 2LINE FLIPCHIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EMIF02-SPK01F2 | STMicroelectronics |
Description: FILTER RC(PI) 10 OHM/200PF SMD Packaging: Tape & Reel (TR) Package / Case: 5-WFBGA, FCBGA Size / Dimension: 0.058" L x 0.042" W (1.47mm x 1.07mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 10Ohms, C = 200pF Height: 0.026" (0.65mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 10 ESD Protection: Yes Number of Channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EMIF06-10006C2 | STMicroelectronics |
Description: IC EMI FILTER 6LINE FLIPCHIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EMIF06-VID01C2 | STMicroelectronics |
Description: FILTER RC(PI) 100 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 15-WFBGA, FCBGA Size / Dimension: 0.115" L x 0.051" W (2.92mm x 1.29mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 16pF (Total) Height: 0.030" (0.76mm) Attenuation Value: -40dB @ 900MHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| EMIF10-LCD01C2 | STMicroelectronics |
Description: FILTER RC(PI) 100 OHM/28PF SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
STEVAL-MET001V1 | STMicroelectronics |
Description: DIL24 ADAPTER BOARD LPS22HB Packaging: Bulk Function: Pressure Interface: I2C, Serial, SPI Type: Sensor Contents: Board(s) Voltage - Supply: 1.7V ~ 3.6V Sensor Type: Pressure Utilized IC / Part: LPS22HB Supplied Contents: Board(s) Embedded: No Sensing Range: 260 ~ 1260 hPa Platform: Professional MEMS Tool Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-ILL084V1 | STMicroelectronics |
Description: EVAL BOARD FOR LED6000 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
STEVAL-ILL077V1 | STMicroelectronics |
Description: EVAL BOARD FOR STNRG388A Features: Dimmable Packaging: Bulk Voltage - Input: 48V ~ 56V Utilized IC / Part: STNRG388A Supplied Contents: Board(s) Outputs and Type: 3, Non-Isolated |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-ILD004V2 | STMicroelectronics |
Description: EVAL BRD STGF10NC60KD TS820-600 Packaging: Bulk Function: Dimmer Type: Opto/Lighting Contents: Board(s) Utilized IC / Part: STGF10NC60KD, TS820-600 Supplied Contents: Board(s) Embedded: Yes, MCU, 8-Bit Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
STEVAL-IDI005V1 | STMicroelectronics |
Description: EVAL BOARD FOR SP1ML-868 Packaging: Bulk For Use With/Related Products: SP1ML-868 Frequency: 868MHz Type: Transceiver Contents: Board(s) Utilized IC / Part: SP1ML-868 Supplied Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
STEVAL-ISA185V1 | STMicroelectronics |
Description: EVAL BOARD FOR A6985F3V3 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-ISA186V1 | STMicroelectronics |
Description: EVAL BOARD FOR A6985F5V |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-ISA187V1 | STMicroelectronics |
Description: EVAL BOARD FOR A6985F |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-MKI170V1 | STMicroelectronics |
Description: DIL24 ADAPTER BOARD IIS328DQ Packaging: Bulk Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit Function: Accelerometer Interface: I2C, Serial, SPI Type: Sensor Contents: Board(s) Voltage - Supply: 2.16V ~ 3.6V Sensor Type: Accelerometer, 3 Axis Utilized IC / Part: IIS328DQ Supplied Contents: Board(s) Embedded: No Sensing Range: ±2g, 4g, 8g Platform: Professional MEMS Tool Part Status: Active |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-IHT008V1 | STMicroelectronics |
Description: LOW STANDBY LOSS FRONT-END BOARD Packaging: Bulk Function: * Type: Power Management Supplied Contents: Board(s) Embedded: Yes, MCU, 8-Bit Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STEVAL-IFP032V1 | STMicroelectronics |
Description: EVAL BOARD FOR VNI8200XP-32 Packaging: Bulk Function: High Side Driver (Internal FET) Type: Power Management Utilized IC / Part: VNI8200XP-32 Supplied Contents: Board(s) Primary Attributes: 8-Channel (Octal) Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
EVAL-L9779WD-SPI | STMicroelectronics |
Description: EVALUATION BOARD FOR L9779WD-SPI |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
L9779WD-SPI | STMicroelectronics |
Description: MULTIFUNCTION IC FOR ENGINE MANA Packaging: Tray Package / Case: 64-BQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.9V ~ 5.1V Applications: Engine Management Current - Supply: 550µA Supplier Device Package: 64-HiQUAD Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
STM32L471QGI6 | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 132UFBGA Number of I/O: 109 Part Status: Active Supplier Device Package: 132-UFBGA (7x7) Peripherals: Brown-out Detect/Reset, DMA, PWM, WDT DigiKey Programmable: Not Verified Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SAI, SPI, SWPMI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 19x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 128K x 8 Program Memory Size: 1MB (1M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 132-UFBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW3N170 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: MOSFET N-CH 1700V 2.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 607 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.26 EUR |
| 30+ | 6.97 EUR |
| 120+ | 5.81 EUR |
| 510+ | 4.95 EUR |
| STW56N65DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW18N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.25 EUR |
| 30+ | 3.97 EUR |
| 60+ | 3.57 EUR |
| 120+ | 3.25 EUR |
| STP43N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.75 EUR |
| 50+ | 6.2 EUR |
| 100+ | 5.66 EUR |
| STW43N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.79 EUR |
| 30+ | 9.17 EUR |
| 120+ | 7.72 EUR |
| 510+ | 6.65 EUR |
| STF43N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.96 EUR |
| 50+ | 6.33 EUR |
| 100+ | 5.78 EUR |
| STF12N50DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Description: MOSFET N-CH 500V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 363 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.28 EUR |
| 50+ | 2.61 EUR |
| 100+ | 2.34 EUR |
| STP28N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STF28N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.16 EUR |
| 10+ | 5.37 EUR |
| 50+ | 4.18 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.11 EUR |
| STP33N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.56 EUR |
| 10+ | 6.33 EUR |
| 50+ | 4.95 EUR |
| 100+ | 4.5 EUR |
| STW33N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Description: MOSFET N-CH 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.85 EUR |
| 30+ | 6.72 EUR |
| 60+ | 6.12 EUR |
| 120+ | 5.59 EUR |
| STF33N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 3098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.7 EUR |
| 10+ | 6.43 EUR |
| 50+ | 5.02 EUR |
| 100+ | 4.57 EUR |
| 500+ | 3.78 EUR |
| STP35N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 600V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.12 EUR |
| 10+ | 6.7 EUR |
| 50+ | 5.24 EUR |
| 100+ | 4.77 EUR |
| STB18N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STD12N50DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STB28N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STB33N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STB35N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STL19N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Description: MOSFET N-CH 600V 11A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STB18N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.59 EUR |
| 10+ | 4.3 EUR |
| 50+ | 3.31 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.43 EUR |
| STD12N50DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 100 V
auf Bestellung 2431 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.48 EUR |
| STB28N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.85 EUR |
| 10+ | 5.83 EUR |
| 50+ | 4.53 EUR |
| 100+ | 4.12 EUR |
| STB33N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
Description: MOSFET N-CH 600V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V
auf Bestellung 818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.91 EUR |
| 10+ | 7.28 EUR |
| 50+ | 5.72 EUR |
| 100+ | 5.22 EUR |
| 500+ | 4.75 EUR |
| STB35N60DM2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LCP154DJF |
|
Hersteller: STMicroelectronics
Description: THYRISTOR 400A 8-POWERVDFN
Description: THYRISTOR 400A 8-POWERVDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LCP154DJF |
|
Hersteller: STMicroelectronics
Description: THYRISTOR 400A 8-POWERVDFN
Description: THYRISTOR 400A 8-POWERVDFN
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.08 EUR |
| 10+ | 6.37 EUR |
| TSX712IDT |
|
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.96 EUR |
| TSX7192IDT |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSB572IST |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LSM6DS3HTR |
Hersteller: STMicroelectronics
Description: IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 14-LGA (2.5x3)
Part Status: Obsolete
Description: IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 14-LGA (2.5x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSX564IYPT |
|
Hersteller: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.78 EUR |
| TSZ124IYPT |
|
Hersteller: STMicroelectronics
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.92 EUR |
| 5000+ | 1.88 EUR |
| 7500+ | 1.86 EUR |
| TSX7192IYST |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSX712IDT |
|
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 5687 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 2.86 EUR |
| 25+ | 2.59 EUR |
| 100+ | 2.32 EUR |
| 250+ | 2.19 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 2.03 EUR |
| TSX7192IDT |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.99 EUR |
| 10+ | 3.9 EUR |
| 25+ | 3.36 EUR |
| 100+ | 2.74 EUR |
| 250+ | 2.44 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.11 EUR |
| TSB572IST |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 380µA (x2 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 8 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 36 V
Qualification: AEC-Q100
auf Bestellung 814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 12+ | 1.76 EUR |
| 25+ | 1.59 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.32 EUR |
| 500+ | 1.27 EUR |
| TSX564IYPT |
|
Hersteller: STMicroelectronics
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
Description: IC CMOS 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 250µA
Slew Rate: 1.1V/µs
Gain Bandwidth Product: 900 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 92 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 16 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.52 EUR |
| 10+ | 2.59 EUR |
| 25+ | 2.37 EUR |
| 100+ | 2.11 EUR |
| 250+ | 1.99 EUR |
| 500+ | 1.92 EUR |
| TSZ124IYPT |
|
Hersteller: STMicroelectronics
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 31µA (x4 Channels)
Slew Rate: 0.19V/µs
Gain Bandwidth Product: 400 kHz
Current - Input Bias: 70 pA
Voltage - Input Offset: 1 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 18 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
auf Bestellung 10247 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.75 EUR |
| 10+ | 2.76 EUR |
| 25+ | 2.52 EUR |
| 100+ | 2.25 EUR |
| 250+ | 2.13 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.99 EUR |
| TSX7192IYST |
|
Hersteller: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 8.5 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.24 EUR |
| 10+ | 3.13 EUR |
| 25+ | 2.86 EUR |
| 100+ | 2.55 EUR |
| 250+ | 2.4 EUR |
| 500+ | 2.33 EUR |
| EMIF01-SMIC01F2 |
Hersteller: STMicroelectronics
Description: FILTER ESD SMD
Description: FILTER ESD SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMIF01-TV01F3 |
|
Hersteller: STMicroelectronics
Description: IC EMI FILTER 1LINE FLIPCHIP
Description: IC EMI FILTER 1LINE FLIPCHIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMIF02-SPK01C2 |
|
Hersteller: STMicroelectronics
Description: IC EMI FILTER 2LINE FLIPCHIP
Description: IC EMI FILTER 2LINE FLIPCHIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMIF02-SPK01F2 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 10 OHM/200PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Size / Dimension: 0.058" L x 0.042" W (1.47mm x 1.07mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 200pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 10 OHM/200PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-WFBGA, FCBGA
Size / Dimension: 0.058" L x 0.042" W (1.47mm x 1.07mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 10Ohms, C = 200pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 10
ESD Protection: Yes
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMIF06-10006C2 |
|
Hersteller: STMicroelectronics
Description: IC EMI FILTER 6LINE FLIPCHIP
Description: IC EMI FILTER 6LINE FLIPCHIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMIF06-VID01C2 |
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-WFBGA, FCBGA
Size / Dimension: 0.115" L x 0.051" W (2.92mm x 1.29mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF (Total)
Height: 0.030" (0.76mm)
Attenuation Value: -40dB @ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-WFBGA, FCBGA
Size / Dimension: 0.115" L x 0.051" W (2.92mm x 1.29mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF (Total)
Height: 0.030" (0.76mm)
Attenuation Value: -40dB @ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMIF10-LCD01C2 |
|
Hersteller: STMicroelectronics
Description: FILTER RC(PI) 100 OHM/28PF SMD
Description: FILTER RC(PI) 100 OHM/28PF SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-MET001V1 |
|
Hersteller: STMicroelectronics
Description: DIL24 ADAPTER BOARD LPS22HB
Packaging: Bulk
Function: Pressure
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: LPS22HB
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 260 ~ 1260 hPa
Platform: Professional MEMS Tool
Part Status: Active
Description: DIL24 ADAPTER BOARD LPS22HB
Packaging: Bulk
Function: Pressure
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Pressure
Utilized IC / Part: LPS22HB
Supplied Contents: Board(s)
Embedded: No
Sensing Range: 260 ~ 1260 hPa
Platform: Professional MEMS Tool
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.67 EUR |
| STEVAL-ILL084V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR LED6000
Description: EVAL BOARD FOR LED6000
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-ILL077V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR STNRG388A
Features: Dimmable
Packaging: Bulk
Voltage - Input: 48V ~ 56V
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
Description: EVAL BOARD FOR STNRG388A
Features: Dimmable
Packaging: Bulk
Voltage - Input: 48V ~ 56V
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
Outputs and Type: 3, Non-Isolated
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 285 EUR |
| STEVAL-ILD004V2 |
|
Hersteller: STMicroelectronics
Description: EVAL BRD STGF10NC60KD TS820-600
Packaging: Bulk
Function: Dimmer
Type: Opto/Lighting
Contents: Board(s)
Utilized IC / Part: STGF10NC60KD, TS820-600
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Description: EVAL BRD STGF10NC60KD TS820-600
Packaging: Bulk
Function: Dimmer
Type: Opto/Lighting
Contents: Board(s)
Utilized IC / Part: STGF10NC60KD, TS820-600
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-IDI005V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR SP1ML-868
Packaging: Bulk
For Use With/Related Products: SP1ML-868
Frequency: 868MHz
Type: Transceiver
Contents: Board(s)
Utilized IC / Part: SP1ML-868
Supplied Contents: Board(s)
Description: EVAL BOARD FOR SP1ML-868
Packaging: Bulk
For Use With/Related Products: SP1ML-868
Frequency: 868MHz
Type: Transceiver
Contents: Board(s)
Utilized IC / Part: SP1ML-868
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STEVAL-ISA185V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR A6985F3V3
Description: EVAL BOARD FOR A6985F3V3
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 50.49 EUR |
| STEVAL-ISA186V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR A6985F5V
Description: EVAL BOARD FOR A6985F5V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 49.35 EUR |
| STEVAL-ISA187V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR A6985F
Description: EVAL BOARD FOR A6985F
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.86 EUR |
| STEVAL-MKI170V1 |
|
Hersteller: STMicroelectronics
Description: DIL24 ADAPTER BOARD IIS328DQ
Packaging: Bulk
Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 2.16V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: IIS328DQ
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g
Platform: Professional MEMS Tool
Part Status: Active
Description: DIL24 ADAPTER BOARD IIS328DQ
Packaging: Bulk
Sensitivity: 0.98 mg/digit, 1.95 mg/digit, 3.91 mg/digit
Function: Accelerometer
Interface: I2C, Serial, SPI
Type: Sensor
Contents: Board(s)
Voltage - Supply: 2.16V ~ 3.6V
Sensor Type: Accelerometer, 3 Axis
Utilized IC / Part: IIS328DQ
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±2g, 4g, 8g
Platform: Professional MEMS Tool
Part Status: Active
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.28 EUR |
| STEVAL-IHT008V1 |
|
Hersteller: STMicroelectronics
Description: LOW STANDBY LOSS FRONT-END BOARD
Packaging: Bulk
Function: *
Type: Power Management
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Description: LOW STANDBY LOSS FRONT-END BOARD
Packaging: Bulk
Function: *
Type: Power Management
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 442.44 EUR |
| STEVAL-IFP032V1 |
|
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR VNI8200XP-32
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNI8200XP-32
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Part Status: Active
Description: EVAL BOARD FOR VNI8200XP-32
Packaging: Bulk
Function: High Side Driver (Internal FET)
Type: Power Management
Utilized IC / Part: VNI8200XP-32
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 201 EUR |
| EVAL-L9779WD-SPI |
|
Hersteller: STMicroelectronics
Description: EVALUATION BOARD FOR L9779WD-SPI
Description: EVALUATION BOARD FOR L9779WD-SPI
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| L9779WD-SPI |
|
Hersteller: STMicroelectronics
Description: MULTIFUNCTION IC FOR ENGINE MANA
Packaging: Tray
Package / Case: 64-BQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.9V ~ 5.1V
Applications: Engine Management
Current - Supply: 550µA
Supplier Device Package: 64-HiQUAD
Part Status: Discontinued at Digi-Key
Description: MULTIFUNCTION IC FOR ENGINE MANA
Packaging: Tray
Package / Case: 64-BQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.9V ~ 5.1V
Applications: Engine Management
Current - Supply: 550µA
Supplier Device Package: 64-HiQUAD
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STM32L471QGI6 |
|
Hersteller: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 132UFBGA
Number of I/O: 109
Part Status: Active
Supplier Device Package: 132-UFBGA (7x7)
Peripherals: Brown-out Detect/Reset, DMA, PWM, WDT
DigiKey Programmable: Not Verified
Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SAI, SPI, SWPMI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 19x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 132-UFBGA
Packaging: Tray
Description: IC MCU 32BIT 1MB FLASH 132UFBGA
Number of I/O: 109
Part Status: Active
Supplier Device Package: 132-UFBGA (7x7)
Peripherals: Brown-out Detect/Reset, DMA, PWM, WDT
DigiKey Programmable: Not Verified
Connectivity: CANbus, EBI/EMI, I2C, IrDA, LINbus, MMC/SD, QSPI, SAI, SPI, SWPMI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 19x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 132-UFBGA
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH