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LDK220M25R LDK220M25R STMicroelectronics en.DM00109416.pdf Description: IC REG LINEAR 2.5V 200MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB ~ 50dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Produkt ist nicht verfügbar
ST1L08SPU12R STMicroelectronics en.DM00123507.pdf Description: IC REG LINEAR 1.2V 800MA 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x3)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
PSRR: 70dB ~ 30dB (100Hz ~ 1MHz)
Voltage Dropout (Max): 0.1V @ 800mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
POWERSTEP01 POWERSTEP01 STMicroelectronics en.DM00090983.pdf Description: IC MTR DRV BIPLR 3.3/5V 89VFQFPN
Packaging: Tray
Package / Case: 89-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 10A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 85V (Max)
Supplier Device Package: 89-VFQFPN (11x14)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/128
Part Status: Active
Produkt ist nicht verfügbar
L6491D L6491D STMicroelectronics en.DM00088170.pdf Description: IC GATE DRVR HALF-BRIDGE 14SO
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SO
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.45V, 2V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
auf Bestellung 1815 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.53 EUR
10+ 5.86 EUR
50+ 5.53 EUR
100+ 4.71 EUR
250+ 4.42 EUR
500+ 3.87 EUR
1000+ 3.21 EUR
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STPSC12C065DY STPSC12C065DY STMicroelectronics en.DM00154119.pdf Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 530pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 154 Stücke:
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3+9.07 EUR
10+ 7.61 EUR
100+ 6.15 EUR
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STPSC20H065CWY STPSC20H065CWY STMicroelectronics DM00123409.pdf Description: DIODE SCHOTTKY SIC 650V TO247
auf Bestellung 200 Stücke:
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STW12N120K5 STW12N120K5 STMicroelectronics en.DM00036727.pdf Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 601 Stücke:
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2+24.6 EUR
30+ 19.65 EUR
120+ 17.58 EUR
510+ 15.51 EUR
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STW40N95K5 STW40N95K5 STMicroelectronics en.DM00119299.pdf Description: MOSFET N-CH 950V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V
auf Bestellung 145 Stücke:
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1+40.72 EUR
30+ 32.96 EUR
120+ 31.02 EUR
STW48N60M2-4 STW48N60M2-4 STMicroelectronics en.DM00127597.pdf Description: MOSFET N-CH 600V 42A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Produkt ist nicht verfügbar
TN5050H-12WY TN5050H-12WY STMicroelectronics en.DM00131778.pdf Description: SCR 1.2KV 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 580A, 633A
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.55 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 208 Stücke:
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120+ 9.95 EUR
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TS110-8A2 TS110-8A2 STMicroelectronics en.DM00122969.pdf Description: SCR HIGH SURGE 1.25A TO92
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
TS110-8A2-AP TS110-8A2-AP STMicroelectronics en.DM00122969.pdf Description: SCR 800V 1.25A TO92-3
auf Bestellung 732 Stücke:
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13+2.08 EUR
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100+ 1.4 EUR
500+ 1.11 EUR
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TS110-8A2-AP TS110-8A2-AP STMicroelectronics en.DM00122969.pdf Description: SCR 800V 1.25A TO92-3
Produkt ist nicht verfügbar
3STF1640 3STF1640 STMicroelectronics en.DM00064237.pdf Description: IC TRANS NPN HP SOT89
Produkt ist nicht verfügbar
L6984ATR L6984ATR STMicroelectronics en.DM00097304.pdf Description: IC REG BCK AD/3.3V 400MA 10VDFPN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 600kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 10-VDFPN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.9V (3.3V)
Part Status: Active
Produkt ist nicht verfügbar
L6984ATR L6984ATR STMicroelectronics en.DM00097304.pdf Description: IC REG BCK AD/3.3V 400MA 10VDFPN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 600kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 10-VDFPN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.9V (3.3V)
Part Status: Active
Produkt ist nicht verfügbar
L7987LTR L7987LTR STMicroelectronics en.DM00116750.pdf Description: IC REG BUCK ADJ 2A 16HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.5MHz
Voltage - Input (Max): 61V
Topology: Buck
Supplier Device Package: 16-HTSSOP
Synchronous Rectifier: No
Voltage - Output (Max): 61V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 14512 Stücke:
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500+ 4.17 EUR
1000+ 3.52 EUR
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L7987LTR L7987LTR STMicroelectronics en.DM00116750.pdf Description: IC REG BUCK ADJ 2A 16HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.5MHz
Voltage - Input (Max): 61V
Topology: Buck
Supplier Device Package: 16-HTSSOP
Synchronous Rectifier: No
Voltage - Output (Max): 61V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 12500 Stücke:
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2500+3.34 EUR
5000+ 3.22 EUR
Mindestbestellmenge: 2500
MJB44H11T4-A MJB44H11T4-A STMicroelectronics en.DM00116400.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Qualification: AEC-Q101
auf Bestellung 2878 Stücke:
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9+3.02 EUR
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100+ 1.92 EUR
500+ 1.63 EUR
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MJB44H11T4-A MJB44H11T4-A STMicroelectronics en.DM00116400.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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1000+1.33 EUR
2000+ 1.25 EUR
Mindestbestellmenge: 1000
STB28N65M2 STB28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 4950 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.55 EUR
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100+ 5.81 EUR
500+ 5.16 EUR
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STB28N65M2 STB28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+4.42 EUR
Mindestbestellmenge: 1000
STB33N65M2 STB33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1355 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.83 EUR
10+ 8.26 EUR
100+ 6.68 EUR
500+ 5.93 EUR
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STB33N65M2 STB33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+5.08 EUR
Mindestbestellmenge: 1000
STD12N65M2 STD12N65M2 STMicroelectronics en.DM00152661.pdf Description: MOSFET N-CH 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
auf Bestellung 2068 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
STD12N65M2 STD12N65M2 STMicroelectronics en.DM00152661.pdf Description: MOSFET N-CH 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
Produkt ist nicht verfügbar
STD130N4F6AG STD130N4F6AG STMicroelectronics DM00157454.pdf Description: MOSFET N-CH 40V 80A DPAK
auf Bestellung 2475 Stücke:
Lieferzeit 21-28 Tag (e)
STD130N4F6AG STD130N4F6AG STMicroelectronics DM00157454.pdf Description: MOSFET N-CH 40V 80A DPAK
Produkt ist nicht verfügbar
STD130N4F6AG STD130N4F6AG STMicroelectronics DM00157454.pdf Description: MOSFET N-CH 40V 80A DPAK
auf Bestellung 2475 Stücke:
Lieferzeit 21-28 Tag (e)
STD13N65M2 STD13N65M2 STMicroelectronics en.DM00153162.pdf Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 1765 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.08 EUR
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100+ 2.7 EUR
500+ 2.28 EUR
1000+ 1.94 EUR
Mindestbestellmenge: 7
STD13N65M2 STD13N65M2 STMicroelectronics en.DM00153162.pdf Description: MOSFET N-CH 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
STD16N60M2 STD16N60M2 STMicroelectronics en.DM00148347.pdf Description: MOSFET N-CH 600V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.63 EUR
10+ 3.84 EUR
100+ 3.06 EUR
500+ 2.59 EUR
1000+ 2.2 EUR
Mindestbestellmenge: 6
STD16N60M2 STD16N60M2 STMicroelectronics en.DM00148347.pdf Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.09 EUR
5000+ 2.01 EUR
Mindestbestellmenge: 2500
STD35P6LLF6 STD35P6LLF6 STMicroelectronics en.DM00101433.pdf Description: MOSFET P-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
auf Bestellung 3362 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 7
STD35P6LLF6 STD35P6LLF6 STMicroelectronics en.DM00101433.pdf Description: MOSFET P-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Produkt ist nicht verfügbar
STD46P4LLF6 STD46P4LLF6 STMicroelectronics en.DM00104682.pdf Description: MOSFET P-CH 40V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Produkt ist nicht verfügbar
STD46P4LLF6 STD46P4LLF6 STMicroelectronics en.DM00104682.pdf Description: MOSFET P-CH 40V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Produkt ist nicht verfügbar
STD52P3LLH6 STD52P3LLH6 STMicroelectronics en.DM00105885.pdf Description: MOSFET P-CH 30V 52A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Produkt ist nicht verfügbar
STD52P3LLH6 STD52P3LLH6 STMicroelectronics en.DM00105885.pdf Description: MOSFET P-CH 30V 52A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Produkt ist nicht verfügbar
STH160N4LF6-2 STH160N4LF6-2 STMicroelectronics en.DM00114742.pdf Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
auf Bestellung 642 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.08 EUR
10+ 3.67 EUR
100+ 2.95 EUR
500+ 2.43 EUR
Mindestbestellmenge: 7
STH160N4LF6-2 STH160N4LF6-2 STMicroelectronics en.DM00114742.pdf Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Produkt ist nicht verfügbar
STH175N4F6-2AG STH175N4F6-2AG STMicroelectronics Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 622 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.97 EUR
10+ 4.13 EUR
100+ 3.29 EUR
500+ 2.78 EUR
Mindestbestellmenge: 6
STH175N4F6-2AG STH175N4F6-2AG STMicroelectronics Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH175N4F6-6AG STH175N4F6-6AG STMicroelectronics Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH185N10F3-6 STH185N10F3-6 STMicroelectronics Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH185N10F3-6 STH185N10F3-6 STMicroelectronics Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH245N75F3-6 STH245N75F3-6 STMicroelectronics en.DM00114770.pdf Description: MOSFET N-CH 75V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH265N6F6-6AG STH265N6F6-6AG STMicroelectronics Description: MOSFET N-CH 60V 180A H2PAK-6
Produkt ist nicht verfügbar
STH265N6F6-6AG STH265N6F6-6AG STMicroelectronics Description: MOSFET N-CH 60V 180A H2PAK-6
Produkt ist nicht verfügbar
STH275N8F7-2AG STH275N8F7-2AG STMicroelectronics en.DM00149381.pdf Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.34 EUR
10+ 11.19 EUR
100+ 9.05 EUR
500+ 8.05 EUR
Mindestbestellmenge: 2
STH275N8F7-2AG STH275N8F7-2AG STMicroelectronics en.DM00149381.pdf Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+6.89 EUR
2000+ 6.49 EUR
Mindestbestellmenge: 1000
STH275N8F7-6AG STH275N8F7-6AG STMicroelectronics en.DM00149381.pdf Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1976 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.6 EUR
10+ 13.11 EUR
100+ 10.6 EUR
500+ 9.43 EUR
Mindestbestellmenge: 2
STH275N8F7-6AG STH275N8F7-6AG STMicroelectronics en.DM00149381.pdf Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+8.08 EUR
Mindestbestellmenge: 1000
STL13N65M2 STL13N65M2 STMicroelectronics en.DM00152696.pdf Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 2790 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.65 EUR
10+ 3.87 EUR
100+ 3.08 EUR
500+ 2.61 EUR
1000+ 2.21 EUR
Mindestbestellmenge: 6
STL13N65M2 STL13N65M2 STMicroelectronics en.DM00152696.pdf Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
STL18N65M2 STL18N65M2 STMicroelectronics en.DM00110867.pdf Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
10+ 5.35 EUR
100+ 4.26 EUR
500+ 3.6 EUR
1000+ 3.06 EUR
Mindestbestellmenge: 5
STL18N65M2 STL18N65M2 STMicroelectronics en.DM00110867.pdf Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
Produkt ist nicht verfügbar
STL42P4LLF6 STL42P4LLF6 STMicroelectronics en.DM00101797.pdf Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 29435 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 2.99 EUR
100+ 2.38 EUR
500+ 2.01 EUR
1000+ 1.71 EUR
Mindestbestellmenge: 8
STL42P4LLF6 STL42P4LLF6 STMicroelectronics en.DM00101797.pdf Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.62 EUR
6000+ 1.56 EUR
9000+ 1.51 EUR
Mindestbestellmenge: 3000
STL42P6LLF6 STL42P6LLF6 STMicroelectronics en.DM00098815.pdf Description: MOSFET P-CH 60V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Produkt ist nicht verfügbar
LDK220M25R en.DM00109416.pdf
LDK220M25R
Hersteller: STMicroelectronics
Description: IC REG LINEAR 2.5V 200MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 13.2V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 55dB ~ 50dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 100 µA
Produkt ist nicht verfügbar
ST1L08SPU12R en.DM00123507.pdf
Hersteller: STMicroelectronics
Description: IC REG LINEAR 1.2V 800MA 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 8-DFN (2x3)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Power Good
PSRR: 70dB ~ 30dB (100Hz ~ 1MHz)
Voltage Dropout (Max): 0.1V @ 800mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
POWERSTEP01 en.DM00090983.pdf
POWERSTEP01
Hersteller: STMicroelectronics
Description: IC MTR DRV BIPLR 3.3/5V 89VFQFPN
Packaging: Tray
Package / Case: 89-PowerVQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 10A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 3.3V, 5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 85V (Max)
Supplier Device Package: 89-VFQFPN (11x14)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/128
Part Status: Active
Produkt ist nicht verfügbar
L6491D en.DM00088170.pdf
L6491D
Hersteller: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 14SO
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SO
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.45V, 2V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
auf Bestellung 1815 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.53 EUR
10+ 5.86 EUR
50+ 5.53 EUR
100+ 4.71 EUR
250+ 4.42 EUR
500+ 3.87 EUR
1000+ 3.21 EUR
Mindestbestellmenge: 4
STPSC12C065DY en.DM00154119.pdf
STPSC12C065DY
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 530pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 154 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.07 EUR
10+ 7.61 EUR
100+ 6.15 EUR
Mindestbestellmenge: 3
STPSC20H065CWY DM00123409.pdf
STPSC20H065CWY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY SIC 650V TO247
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
STW12N120K5 en.DM00036727.pdf
STW12N120K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 601 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.6 EUR
30+ 19.65 EUR
120+ 17.58 EUR
510+ 15.51 EUR
Mindestbestellmenge: 2
STW40N95K5 en.DM00119299.pdf
STW40N95K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V
auf Bestellung 145 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+40.72 EUR
30+ 32.96 EUR
120+ 31.02 EUR
STW48N60M2-4 en.DM00127597.pdf
STW48N60M2-4
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Produkt ist nicht verfügbar
TN5050H-12WY en.DM00131778.pdf
TN5050H-12WY
Hersteller: STMicroelectronics
Description: SCR 1.2KV 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 580A, 633A
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.55 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-247-3
Part Status: Active
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 208 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.64 EUR
30+ 11.6 EUR
120+ 9.95 EUR
Mindestbestellmenge: 2
TS110-8A2 en.DM00122969.pdf
TS110-8A2
Hersteller: STMicroelectronics
Description: SCR HIGH SURGE 1.25A TO92
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
TS110-8A2-AP en.DM00122969.pdf
TS110-8A2-AP
Hersteller: STMicroelectronics
Description: SCR 800V 1.25A TO92-3
auf Bestellung 732 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.83 EUR
100+ 1.4 EUR
500+ 1.11 EUR
Mindestbestellmenge: 13
TS110-8A2-AP en.DM00122969.pdf
TS110-8A2-AP
Hersteller: STMicroelectronics
Description: SCR 800V 1.25A TO92-3
Produkt ist nicht verfügbar
3STF1640 en.DM00064237.pdf
3STF1640
Hersteller: STMicroelectronics
Description: IC TRANS NPN HP SOT89
Produkt ist nicht verfügbar
L6984ATR en.DM00097304.pdf
L6984ATR
Hersteller: STMicroelectronics
Description: IC REG BCK AD/3.3V 400MA 10VDFPN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 600kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 10-VDFPN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.9V (3.3V)
Part Status: Active
Produkt ist nicht verfügbar
L6984ATR en.DM00097304.pdf
L6984ATR
Hersteller: STMicroelectronics
Description: IC REG BCK AD/3.3V 400MA 10VDFPN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 600kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 10-VDFPN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.9V (3.3V)
Part Status: Active
Produkt ist nicht verfügbar
L7987LTR en.DM00116750.pdf
L7987LTR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 2A 16HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.5MHz
Voltage - Input (Max): 61V
Topology: Buck
Supplier Device Package: 16-HTSSOP
Synchronous Rectifier: No
Voltage - Output (Max): 61V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 14512 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
10+ 5.98 EUR
25+ 5.66 EUR
100+ 4.9 EUR
250+ 4.65 EUR
500+ 4.17 EUR
1000+ 3.52 EUR
Mindestbestellmenge: 4
L7987LTR en.DM00116750.pdf
L7987LTR
Hersteller: STMicroelectronics
Description: IC REG BUCK ADJ 2A 16HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 250kHz ~ 1.5MHz
Voltage - Input (Max): 61V
Topology: Buck
Supplier Device Package: 16-HTSSOP
Synchronous Rectifier: No
Voltage - Output (Max): 61V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+3.34 EUR
5000+ 3.22 EUR
Mindestbestellmenge: 2500
MJB44H11T4-A en.DM00116400.pdf
MJB44H11T4-A
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Qualification: AEC-Q101
auf Bestellung 2878 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.02 EUR
11+ 2.47 EUR
100+ 1.92 EUR
500+ 1.63 EUR
Mindestbestellmenge: 9
MJB44H11T4-A en.DM00116400.pdf
MJB44H11T4-A
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.33 EUR
2000+ 1.25 EUR
Mindestbestellmenge: 1000
STB28N65M2 en.DM00150353.pdf
STB28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 4950 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.55 EUR
10+ 7.18 EUR
100+ 5.81 EUR
500+ 5.16 EUR
Mindestbestellmenge: 4
STB28N65M2 en.DM00150353.pdf
STB28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+4.42 EUR
Mindestbestellmenge: 1000
STB33N65M2 en.DM00151754.pdf
STB33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1355 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.83 EUR
10+ 8.26 EUR
100+ 6.68 EUR
500+ 5.93 EUR
Mindestbestellmenge: 3
STB33N65M2 en.DM00151754.pdf
STB33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+5.08 EUR
Mindestbestellmenge: 1000
STD12N65M2 en.DM00152661.pdf
STD12N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
auf Bestellung 2068 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
STD12N65M2 en.DM00152661.pdf
STD12N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
Produkt ist nicht verfügbar
STD130N4F6AG DM00157454.pdf
STD130N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
auf Bestellung 2475 Stücke:
Lieferzeit 21-28 Tag (e)
STD130N4F6AG DM00157454.pdf
STD130N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Produkt ist nicht verfügbar
STD130N4F6AG DM00157454.pdf
STD130N4F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
auf Bestellung 2475 Stücke:
Lieferzeit 21-28 Tag (e)
STD13N65M2 en.DM00153162.pdf
STD13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 1765 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.08 EUR
10+ 3.39 EUR
100+ 2.7 EUR
500+ 2.28 EUR
1000+ 1.94 EUR
Mindestbestellmenge: 7
STD13N65M2 en.DM00153162.pdf
STD13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
STD16N60M2 en.DM00148347.pdf
STD16N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.63 EUR
10+ 3.84 EUR
100+ 3.06 EUR
500+ 2.59 EUR
1000+ 2.2 EUR
Mindestbestellmenge: 6
STD16N60M2 en.DM00148347.pdf
STD16N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.09 EUR
5000+ 2.01 EUR
Mindestbestellmenge: 2500
STD35P6LLF6 en.DM00101433.pdf
STD35P6LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
auf Bestellung 3362 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 7
STD35P6LLF6 en.DM00101433.pdf
STD35P6LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 17.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Produkt ist nicht verfügbar
STD46P4LLF6 en.DM00104682.pdf
STD46P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Produkt ist nicht verfügbar
STD46P4LLF6 en.DM00104682.pdf
STD46P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 23A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
Produkt ist nicht verfügbar
STD52P3LLH6 en.DM00105885.pdf
STD52P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 52A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Produkt ist nicht verfügbar
STD52P3LLH6 en.DM00105885.pdf
STD52P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 52A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V
Produkt ist nicht verfügbar
STH160N4LF6-2 en.DM00114742.pdf
STH160N4LF6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
auf Bestellung 642 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.08 EUR
10+ 3.67 EUR
100+ 2.95 EUR
500+ 2.43 EUR
Mindestbestellmenge: 7
STH160N4LF6-2 en.DM00114742.pdf
STH160N4LF6-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Produkt ist nicht verfügbar
STH175N4F6-2AG
STH175N4F6-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 622 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.97 EUR
10+ 4.13 EUR
100+ 3.29 EUR
500+ 2.78 EUR
Mindestbestellmenge: 6
STH175N4F6-2AG
STH175N4F6-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH175N4F6-6AG
STH175N4F6-6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7735 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH185N10F3-6
STH185N10F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH185N10F3-6
STH185N10F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH245N75F3-6 en.DM00114770.pdf
STH245N75F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
STH265N6F6-6AG
STH265N6F6-6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A H2PAK-6
Produkt ist nicht verfügbar
STH265N6F6-6AG
STH265N6F6-6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A H2PAK-6
Produkt ist nicht verfügbar
STH275N8F7-2AG en.DM00149381.pdf
STH275N8F7-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.34 EUR
10+ 11.19 EUR
100+ 9.05 EUR
500+ 8.05 EUR
Mindestbestellmenge: 2
STH275N8F7-2AG en.DM00149381.pdf
STH275N8F7-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+6.89 EUR
2000+ 6.49 EUR
Mindestbestellmenge: 1000
STH275N8F7-6AG en.DM00149381.pdf
STH275N8F7-6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1976 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.6 EUR
10+ 13.11 EUR
100+ 10.6 EUR
500+ 9.43 EUR
Mindestbestellmenge: 2
STH275N8F7-6AG en.DM00149381.pdf
STH275N8F7-6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+8.08 EUR
Mindestbestellmenge: 1000
STL13N65M2 en.DM00152696.pdf
STL13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 2790 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.65 EUR
10+ 3.87 EUR
100+ 3.08 EUR
500+ 2.61 EUR
1000+ 2.21 EUR
Mindestbestellmenge: 6
STL13N65M2 en.DM00152696.pdf
STL13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 475mOhm @ 3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
STL18N65M2 en.DM00110867.pdf
STL18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
10+ 5.35 EUR
100+ 4.26 EUR
500+ 3.6 EUR
1000+ 3.06 EUR
Mindestbestellmenge: 5
STL18N65M2 en.DM00110867.pdf
STL18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 365mOhm @ 4A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 764 pF @ 100 V
Produkt ist nicht verfügbar
STL42P4LLF6 en.DM00101797.pdf
STL42P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 29435 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 2.99 EUR
100+ 2.38 EUR
500+ 2.01 EUR
1000+ 1.71 EUR
Mindestbestellmenge: 8
STL42P4LLF6 en.DM00101797.pdf
STL42P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.62 EUR
6000+ 1.56 EUR
9000+ 1.51 EUR
Mindestbestellmenge: 3000
STL42P6LLF6 en.DM00098815.pdf
STL42P6LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 25 V
Produkt ist nicht verfügbar
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