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STPTIC-68F1M6 STPTIC-68F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
auf Bestellung 2622 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
14+ 1.9 EUR
25+ 1.71 EUR
100+ 1.5 EUR
250+ 1.32 EUR
500+ 1.16 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
STPTIC-68F1M6 STPTIC-68F1M6 STMicroelectronics STPTIC.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Produkt ist nicht verfügbar
STPTIC-82F1M6 STPTIC-82F1M6 STMicroelectronics DM00067231.pdf Description: IC TUNABLE CAP RF BST 6UQFN
auf Bestellung 1211 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.29 EUR
13+ 2.01 EUR
25+ 1.82 EUR
100+ 1.59 EUR
250+ 1.4 EUR
500+ 1.23 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
STPTIC-82F1M6 STPTIC-82F1M6 STMicroelectronics DM00067231.pdf Description: IC TUNABLE CAP RF BST 6UQFN
Produkt ist nicht verfügbar
STR1P2UH7 STR1P2UH7 STMicroelectronics STR1P2UH7_Jun2015_DS.pdf Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Produkt ist nicht verfügbar
STR1P2UH7 STR1P2UH7 STMicroelectronics STR1P2UH7_Jun2015_DS.pdf Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Produkt ist nicht verfügbar
STR2P3LLH6 STR2P3LLH6 STMicroelectronics en.DM00084050.pdf Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 18694 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
STR2P3LLH6 STR2P3LLH6 STMicroelectronics en.DM00084050.pdf Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.49 EUR
6000+ 0.46 EUR
Mindestbestellmenge: 3000
STT4P3LLH6 STT4P3LLH6 STMicroelectronics en.DM00084060.pdf Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.34 EUR
100+ 1.03 EUR
500+ 0.81 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 17
STT4P3LLH6 STT4P3LLH6 STMicroelectronics en.DM00084060.pdf Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
6000+ 0.55 EUR
15000+ 0.53 EUR
30000+ 0.51 EUR
Mindestbestellmenge: 3000
TLVH431LICT TLVH431LICT STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
27+ 0.99 EUR
29+ 0.9 EUR
100+ 0.67 EUR
250+ 0.61 EUR
500+ 0.5 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 22
TLVH431LICT TLVH431LICT STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.35 EUR
6000+ 0.33 EUR
Mindestbestellmenge: 3000
TLVH431LIL3T TLVH431LIL3T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 305522 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
27+ 0.99 EUR
29+ 0.9 EUR
100+ 0.67 EUR
250+ 0.61 EUR
500+ 0.5 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 22
TLVH431LIL3T TLVH431LIL3T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.35 EUR
6000+ 0.33 EUR
15000+ 0.3 EUR
30000+ 0.28 EUR
75000+ 0.27 EUR
Mindestbestellmenge: 3000
TLVH431LIL5T TLVH431LIL5T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 4145 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
27+ 0.98 EUR
30+ 0.89 EUR
100+ 0.67 EUR
250+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 22
TLVH431LIL5T TLVH431LIL5T STMicroelectronics en.DM00057412.pdf Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
Produkt ist nicht verfügbar
TS4061BICT-1.225 TS4061BICT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 2806 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.5 EUR
12+ 2.23 EUR
25+ 2.12 EUR
100+ 1.74 EUR
250+ 1.62 EUR
500+ 1.44 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
TS4061BICT-1.225 TS4061BICT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar
TS4061BICT-1.25 TS4061BICT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 11630 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.31 EUR
13+ 2.07 EUR
25+ 1.96 EUR
100+ 1.61 EUR
250+ 1.51 EUR
500+ 1.33 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 12
TS4061BICT-1.25 TS4061BICT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.98 EUR
6000+ 0.93 EUR
Mindestbestellmenge: 3000
TS4061BILT-1.225 TS4061BILT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
TS4061BILT-1.225 TS4061BILT-1.225 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Produkt ist nicht verfügbar
TS4061BILT-1.25 TS4061BILT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Produkt ist nicht verfügbar
TS4061BILT-1.25 TS4061BILT-1.25 STMicroelectronics en.DM00114435.pdf Description: IC VREF SHUNT 0.2% SOT23-3
Produkt ist nicht verfügbar
FERD30SM100ST FERD30SM100ST STMicroelectronics en.DM00155256.pdf Description: DIODE RECT 100V 30A TO220AB
auf Bestellung 288 Stücke:
Lieferzeit 21-28 Tag (e)
LF50CV-DG LF50CV-DG STMicroelectronics en.CD00000546.pdf Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
PSRR: 76dB ~ 60dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
STF12N65M2 STF12N65M2 STMicroelectronics en.DM00152663.pdf Description: MOSFET N-CH 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
auf Bestellung 366 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.5 EUR
50+ 3.6 EUR
100+ 2.96 EUR
Mindestbestellmenge: 6
STF13N65M2 STF13N65M2 STMicroelectronics en.DM00133025.pdf Description: N-channel 650 V, 0.37 Ohm typ.,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 865 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.65 EUR
50+ 3.75 EUR
100+ 3.08 EUR
500+ 2.61 EUR
Mindestbestellmenge: 6
STF18N65M2 STF18N65M2 STMicroelectronics en.DM00132600.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.29 EUR
50+ 5.05 EUR
100+ 4.15 EUR
500+ 3.51 EUR
1000+ 2.98 EUR
2000+ 2.83 EUR
Mindestbestellmenge: 5
STF28N65M2 STF28N65M2 STMicroelectronics en.DM00150353.pdf Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 3182 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.22 EUR
50+ 6.51 EUR
100+ 5.58 EUR
500+ 4.96 EUR
1000+ 4.25 EUR
2000+ 4 EUR
Mindestbestellmenge: 4
STF33N65M2 STF33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 388 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.15 EUR
10+ 7.7 EUR
100+ 6.23 EUR
Mindestbestellmenge: 3
STF40N65M2 STF40N65M2 STMicroelectronics en.DM00158277.pdf Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
STFW2N105K5 STFW2N105K5 STMicroelectronics en.DM00115969.pdf Description: MOSFET N-CH 1050V 2A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.08 EUR
30+ 4.88 EUR
120+ 4.02 EUR
510+ 3.4 EUR
Mindestbestellmenge: 5
STFW40N60M2 STFW40N60M2 STMicroelectronics en.DM00116766.pdf Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
STFW45N65M5 STFW45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
STGIPL30C60-H STGIPL30C60-H STMicroelectronics DM00083056.pdf Description: MOD IPM SLLIMM 8PHASE 38SDIP
auf Bestellung 105 Stücke:
Lieferzeit 21-28 Tag (e)
STGIPS10C60T-H STGIPS10C60T-H STMicroelectronics en.DM00102031.pdf Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGW30H60DLFB STGW30H60DLFB STMicroelectronics en.DM00118368.pdf Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
STGWA15H120F2 STGWA15H120F2 STMicroelectronics en.DM00109377.pdf Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
Produkt ist nicht verfügbar
STGWA25H120DF2 STGWA25H120DF2 STMicroelectronics en.DM00066775.pdf Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.85 EUR
30+ 11.84 EUR
120+ 10.59 EUR
510+ 9.35 EUR
Mindestbestellmenge: 2
STGWA25H120F2 STGWA25H120F2 STMicroelectronics en.DM00109190.pdf Description: IGBT HB 1200V 25A HS TO247-3
Produkt ist nicht verfügbar
STI18N65M2 STI18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
STI40N65M2 STI40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
STP100N8F6 STP100N8F6 STMicroelectronics en.DM00131264.pdf Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
auf Bestellung 41436 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.63 EUR
50+ 2.1 EUR
100+ 1.73 EUR
500+ 1.56 EUR
Mindestbestellmenge: 10
STP13N65M2 STP13N65M2 STMicroelectronics en.DM00133031.pdf Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
STP160N4LF6 STP160N4LF6 STMicroelectronics en.DM00114754.pdf Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Produkt ist nicht verfügbar
STP18N65M2 STP18N65M2 STMicroelectronics en.DM00132456.pdf Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 1005 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.34 EUR
50+ 5.09 EUR
100+ 4.18 EUR
500+ 3.54 EUR
1000+ 3 EUR
Mindestbestellmenge: 5
STP265N6F6AG STP265N6F6AG STMicroelectronics STP265N6F6AG.pdf Description: MOSFET N-CH 60V 180A TO220
Produkt ist nicht verfügbar
STP33N65M2 STP33N65M2 STMicroelectronics en.DM00151754.pdf Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 712 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.44 EUR
10+ 7.92 EUR
100+ 6.41 EUR
500+ 5.7 EUR
Mindestbestellmenge: 3
STP40N65M2 STP40N65M2 STMicroelectronics en.DM00159990.pdf Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.62 EUR
Mindestbestellmenge: 2
STPS20SM120SFP STPS20SM120SFP STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
STPS20SM120ST STPS20SM120ST STMicroelectronics en.DM00050163.pdf Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
STPS30SM120SFP STPS30SM120SFP STMicroelectronics en.DM00050160.pdf Description: DIODE SCHOTT 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 1676 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.46 EUR
50+ 2.76 EUR
100+ 2.19 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
STPS41H100CTY STPS41H100CTY STMicroelectronics en.DM00024413.pdf Description: DIODE ARR SCHOTT 100V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1006 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.28 EUR
10+ 4.39 EUR
100+ 3.49 EUR
500+ 2.96 EUR
1000+ 2.51 EUR
Mindestbestellmenge: 5
STPSC20H065CTY STPSC20H065CTY STMicroelectronics en.DM00123409.pdf Description: DIODE SCHOTTKY SIC 650V TO220AB
auf Bestellung 362 Stücke:
Lieferzeit 21-28 Tag (e)
STTH15S12D STTH15S12D STMicroelectronics en.DM00124752.pdf Description: DIODE GEN PURP 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 35960 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.26 EUR
10+ 3.83 EUR
100+ 3.08 EUR
500+ 2.53 EUR
1000+ 2.1 EUR
2000+ 1.95 EUR
5000+ 1.88 EUR
10000+ 1.81 EUR
Mindestbestellmenge: 7
STTH15S12W STTH15S12W STMicroelectronics en.DM00124752.pdf Description: DIODE GEN PURP 1.2KV 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
STTH30S12W STTH30S12W STMicroelectronics en.DM00124835.pdf Description: DIODE GEN PURP 1.2KV 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Produkt ist nicht verfügbar
STTH31AC06SWL STTH31AC06SWL STMicroelectronics en.DM00135050.pdf Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 155 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.24 EUR
10+ 7.39 EUR
100+ 6.06 EUR
Mindestbestellmenge: 4
STTH60AC06CWL STTH60AC06CWL STMicroelectronics en.DM00088638.pdf Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 594 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.66 EUR
30+ 6.85 EUR
120+ 5.87 EUR
510+ 5.22 EUR
Mindestbestellmenge: 4
STPTIC-68F1M6 STPTIC.pdf
STPTIC-68F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
auf Bestellung 2622 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.9 EUR
25+ 1.71 EUR
100+ 1.5 EUR
250+ 1.32 EUR
500+ 1.16 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
STPTIC-68F1M6 STPTIC.pdf
STPTIC-68F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Produkt ist nicht verfügbar
STPTIC-82F1M6 DM00067231.pdf
STPTIC-82F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
auf Bestellung 1211 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.29 EUR
13+ 2.01 EUR
25+ 1.82 EUR
100+ 1.59 EUR
250+ 1.4 EUR
500+ 1.23 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
STPTIC-82F1M6 DM00067231.pdf
STPTIC-82F1M6
Hersteller: STMicroelectronics
Description: IC TUNABLE CAP RF BST 6UQFN
Produkt ist nicht verfügbar
STR1P2UH7 STR1P2UH7_Jun2015_DS.pdf
STR1P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Produkt ist nicht verfügbar
STR1P2UH7 STR1P2UH7_Jun2015_DS.pdf
STR1P2UH7
Hersteller: STMicroelectronics
Description: MOSFET P-CH 20V 1.4A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V
Produkt ist nicht verfügbar
STR2P3LLH6 en.DM00084050.pdf
STR2P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 18694 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
STR2P3LLH6 en.DM00084050.pdf
STR2P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.49 EUR
6000+ 0.46 EUR
Mindestbestellmenge: 3000
STT4P3LLH6 en.DM00084060.pdf
STT4P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.34 EUR
100+ 1.03 EUR
500+ 0.81 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 17
STT4P3LLH6 en.DM00084060.pdf
STT4P3LLH6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 4A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
6000+ 0.55 EUR
15000+ 0.53 EUR
30000+ 0.51 EUR
Mindestbestellmenge: 3000
TLVH431LICT en.DM00057412.pdf
TLVH431LICT
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
27+ 0.99 EUR
29+ 0.9 EUR
100+ 0.67 EUR
250+ 0.61 EUR
500+ 0.5 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 22
TLVH431LICT en.DM00057412.pdf
TLVH431LICT
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT323-6L
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-323-6L
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
Mindestbestellmenge: 3000
TLVH431LIL3T en.DM00057412.pdf
TLVH431LIL3T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 305522 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
27+ 0.99 EUR
29+ 0.9 EUR
100+ 0.67 EUR
250+ 0.61 EUR
500+ 0.5 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 22
TLVH431LIL3T en.DM00057412.pdf
TLVH431LIL3T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-3
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
15000+ 0.3 EUR
30000+ 0.28 EUR
75000+ 0.27 EUR
Mindestbestellmenge: 3000
TLVH431LIL5T en.DM00057412.pdf
TLVH431LIL5T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
auf Bestellung 4145 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
27+ 0.98 EUR
30+ 0.89 EUR
100+ 0.67 EUR
250+ 0.6 EUR
500+ 0.5 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 22
TLVH431LIL5T en.DM00057412.pdf
TLVH431LIL5T
Hersteller: STMicroelectronics
Description: IC VREF SHUNT ADJ 1.5% SOT23-5
Tolerance: ±1.5%
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 1.24V
Noise - 10Hz to 10kHz: 30mVrms
Part Status: Active
Current - Cathode: 200 µA
Current - Output: 60 mA
Voltage - Output (Max): 18 V
Produkt ist nicht verfügbar
TS4061BICT-1.225 en.DM00114435.pdf
TS4061BICT-1.225
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 2806 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.5 EUR
12+ 2.23 EUR
25+ 2.12 EUR
100+ 1.74 EUR
250+ 1.62 EUR
500+ 1.44 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
TS4061BICT-1.225 en.DM00114435.pdf
TS4061BICT-1.225
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323
Voltage - Output (Min/Fixed): 1.225V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
Produkt ist nicht verfügbar
TS4061BICT-1.25 en.DM00114435.pdf
TS4061BICT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Cut Tape (CT)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 11630 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.31 EUR
13+ 2.07 EUR
25+ 1.96 EUR
100+ 1.61 EUR
250+ 1.51 EUR
500+ 1.33 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 12
TS4061BICT-1.25 en.DM00114435.pdf
TS4061BICT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT323-3
Packaging: Tape & Reel (TR)
Tolerance: ±0.2%
Package / Case: SC-70, SOT-323
Temperature Coefficient: 35ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-3
Voltage - Output (Min/Fixed): 1.25V
Noise - 0.1Hz to 10Hz: 10µVp-p
Noise - 10Hz to 10kHz: 95µVrms
Part Status: Active
Current - Cathode: 12 µA
Current - Output: 15 mA
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.98 EUR
6000+ 0.93 EUR
Mindestbestellmenge: 3000
TS4061BILT-1.225 en.DM00114435.pdf
TS4061BILT-1.225
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
TS4061BILT-1.225 en.DM00114435.pdf
TS4061BILT-1.225
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Produkt ist nicht verfügbar
TS4061BILT-1.25 en.DM00114435.pdf
TS4061BILT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Produkt ist nicht verfügbar
TS4061BILT-1.25 en.DM00114435.pdf
TS4061BILT-1.25
Hersteller: STMicroelectronics
Description: IC VREF SHUNT 0.2% SOT23-3
Produkt ist nicht verfügbar
FERD30SM100ST en.DM00155256.pdf
FERD30SM100ST
Hersteller: STMicroelectronics
Description: DIODE RECT 100V 30A TO220AB
auf Bestellung 288 Stücke:
Lieferzeit 21-28 Tag (e)
LF50CV-DG en.CD00000546.pdf
LF50CV-DG
Hersteller: STMicroelectronics
Description: IC REG LINEAR 5V 500MA TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 5V
PSRR: 76dB ~ 60dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
STF12N65M2 en.DM00152663.pdf
STF12N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 100 V
auf Bestellung 366 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
50+ 3.6 EUR
100+ 2.96 EUR
Mindestbestellmenge: 6
STF13N65M2 en.DM00133025.pdf
STF13N65M2
Hersteller: STMicroelectronics
Description: N-channel 650 V, 0.37 Ohm typ.,
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
auf Bestellung 865 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.65 EUR
50+ 3.75 EUR
100+ 3.08 EUR
500+ 2.61 EUR
Mindestbestellmenge: 6
STF18N65M2 en.DM00132600.pdf
STF18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.29 EUR
50+ 5.05 EUR
100+ 4.15 EUR
500+ 3.51 EUR
1000+ 2.98 EUR
2000+ 2.83 EUR
Mindestbestellmenge: 5
STF28N65M2 en.DM00150353.pdf
STF28N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 3182 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.22 EUR
50+ 6.51 EUR
100+ 5.58 EUR
500+ 4.96 EUR
1000+ 4.25 EUR
2000+ 4 EUR
Mindestbestellmenge: 4
STF33N65M2 en.DM00151754.pdf
STF33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 388 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.15 EUR
10+ 7.7 EUR
100+ 6.23 EUR
Mindestbestellmenge: 3
STF40N65M2 en.DM00158277.pdf
STF40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
STFW2N105K5 en.DM00115969.pdf
STFW2N105K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1050V 2A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.08 EUR
30+ 4.88 EUR
120+ 4.02 EUR
510+ 3.4 EUR
Mindestbestellmenge: 5
STFW40N60M2 en.DM00116766.pdf
STFW40N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Produkt ist nicht verfügbar
STFW45N65M5 en.DM00072250.pdf
STFW45N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar
STGIPL30C60-H DM00083056.pdf
STGIPL30C60-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 8PHASE 38SDIP
auf Bestellung 105 Stücke:
Lieferzeit 21-28 Tag (e)
STGIPS10C60T-H en.DM00102031.pdf
STGIPS10C60T-H
Hersteller: STMicroelectronics
Description: MOD IPM SLLIMM 3PHASE 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
STGW30H60DLFB en.DM00118368.pdf
STGW30H60DLFB
Hersteller: STMicroelectronics
Description: IGBT HB 600V 30A HS TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Produkt ist nicht verfügbar
STGWA15H120F2 en.DM00109377.pdf
STGWA15H120F2
Hersteller: STMicroelectronics
Description: IGBT HB 1200V 15A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/111ns
Switching Energy: 380µJ (on), 370µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 259 W
Produkt ist nicht verfügbar
STGWA25H120DF2 en.DM00066775.pdf
STGWA25H120DF2
Hersteller: STMicroelectronics
Description: IGBT HB 1200V 25A HS TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 303 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/130ns
Switching Energy: 600µJ (on), 700µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 375 W
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.85 EUR
30+ 11.84 EUR
120+ 10.59 EUR
510+ 9.35 EUR
Mindestbestellmenge: 2
STGWA25H120F2 en.DM00109190.pdf
STGWA25H120F2
Hersteller: STMicroelectronics
Description: IGBT HB 1200V 25A HS TO247-3
Produkt ist nicht verfügbar
STI18N65M2 en.DM00132456.pdf
STI18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Produkt ist nicht verfügbar
STI40N65M2 en.DM00159990.pdf
STI40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
Produkt ist nicht verfügbar
STP100N8F6 en.DM00131264.pdf
STP100N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5955 pF @ 25 V
auf Bestellung 41436 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.63 EUR
50+ 2.1 EUR
100+ 1.73 EUR
500+ 1.56 EUR
Mindestbestellmenge: 10
STP13N65M2 en.DM00133031.pdf
STP13N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Produkt ist nicht verfügbar
STP160N4LF6 en.DM00114754.pdf
STP160N4LF6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
Produkt ist nicht verfügbar
STP18N65M2 en.DM00132456.pdf
STP18N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 1005 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.34 EUR
50+ 5.09 EUR
100+ 4.18 EUR
500+ 3.54 EUR
1000+ 3 EUR
Mindestbestellmenge: 5
STP265N6F6AG STP265N6F6AG.pdf
STP265N6F6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 180A TO220
Produkt ist nicht verfügbar
STP33N65M2 en.DM00151754.pdf
STP33N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 24A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
auf Bestellung 712 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.44 EUR
10+ 7.92 EUR
100+ 6.41 EUR
500+ 5.7 EUR
Mindestbestellmenge: 3
STP40N65M2 en.DM00159990.pdf
STP40N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.62 EUR
Mindestbestellmenge: 2
STPS20SM120SFP en.DM00050163.pdf
STPS20SM120SFP
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 120V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
STPS20SM120ST en.DM00050163.pdf
STPS20SM120ST
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY 120V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 120 V
Produkt ist nicht verfügbar
STPS30SM120SFP en.DM00050160.pdf
STPS30SM120SFP
Hersteller: STMicroelectronics
Description: DIODE SCHOTT 120V 30A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 275 µA @ 120 V
auf Bestellung 1676 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.46 EUR
50+ 2.76 EUR
100+ 2.19 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
STPS41H100CTY en.DM00024413.pdf
STPS41H100CTY
Hersteller: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 1006 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.28 EUR
10+ 4.39 EUR
100+ 3.49 EUR
500+ 2.96 EUR
1000+ 2.51 EUR
Mindestbestellmenge: 5
STPSC20H065CTY en.DM00123409.pdf
STPSC20H065CTY
Hersteller: STMicroelectronics
Description: DIODE SCHOTTKY SIC 650V TO220AB
auf Bestellung 362 Stücke:
Lieferzeit 21-28 Tag (e)
STTH15S12D en.DM00124752.pdf
STTH15S12D
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 35960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.26 EUR
10+ 3.83 EUR
100+ 3.08 EUR
500+ 2.53 EUR
1000+ 2.1 EUR
2000+ 1.95 EUR
5000+ 1.88 EUR
10000+ 1.81 EUR
Mindestbestellmenge: 7
STTH15S12W en.DM00124752.pdf
STTH15S12W
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 15A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
STTH30S12W en.DM00124835.pdf
STTH30S12W
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1.2KV 30A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Produkt ist nicht verfügbar
STTH31AC06SWL en.DM00135050.pdf
STTH31AC06SWL
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 155 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.24 EUR
10+ 7.39 EUR
100+ 6.06 EUR
Mindestbestellmenge: 4
STTH60AC06CWL en.DM00088638.pdf
STTH60AC06CWL
Hersteller: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.66 EUR
30+ 6.85 EUR
120+ 5.87 EUR
510+ 5.22 EUR
Mindestbestellmenge: 4
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