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STM8AL3188TCY STM8AL3188TCY STMicroelectronics en.DM00148083.pdf Description: IC MCU 8BIT 64KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Number of I/O: 41
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 25x12b; D/A 2x12b
Core Processor: STM8
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
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STM8AL318ATCY STM8AL318ATCY STMicroelectronics en.DM00148083.pdf Description: IC MCU 8BIT 64KB FLASH 80LQFP
Number of I/O: 68
Part Status: Not For New Designs
Supplier Device Package: 80-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 28x12b; D/A 2x12b
Core Processor: STM8
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
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STTH2R02AFY STTH2R02AFY STMicroelectronics en.DM00164386.pdf Description: DIODE STD 200V 2A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STTH2R02AFY STTH2R02AFY STMicroelectronics en.DM00164386.pdf Description: DIODE STD 200V 2A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STTH3R02AFY STTH3R02AFY STMicroelectronics en.DM00164391.pdf Description: DIODE STD 200V 3A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STTH3R02AFY STTH3R02AFY STMicroelectronics en.DM00164391.pdf Description: DIODE STD 200V 3A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SPC5-UDEDEBG SPC5-UDEDEBG STMicroelectronics en.DM00094241.pdf Description: UDE STARTER KIT LICENCE UNLIMITD
License - User Details: Unlimited Connections
License Length: Perpetual
Operating System: Windows XP, Vista, 7, 8
Utilized IC / Part: SPC5
Applications: Programming
Type: License
Packaging: Bulk
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SPC5-UDESTK-PLUS STMicroelectronics DM00085838.pdf Description: LICENSE FULL PERPETUAL SPC5
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SPV1050TTR SPV1050TTR STMicroelectronics en.DM00100984.pdf Description: IC BATT CHG MULTI-CHEM 20VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-VFQFPN (3x3)
Charge Current - Max: 70mA
Voltage - Supply (Max): 18V
Battery Pack Voltage: 5.3V (Max)
Current - Charging: Constant - Programmable
Part Status: Active
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STEVAL-IDS002V1 STEVAL-IDS002V1 STMicroelectronics STEVAL-IDS002V1.pdf Description: BOARD EVAL WIRELESS PV SPV1050
Packaging: Box
Utilized IC / Part: SPV1050
Contents: Board(s)
Part Status: Obsolete
Supplied Contents: Board(s)
Type: Transmitter, Receiver
For Use With/Related Products: SPV1050
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STM32469I-EVAL STM32469I-EVAL STMicroelectronics en.DM00219980.pdf Description: STM32F469 EVAL BRD
Part Status: Obsolete
Utilized IC / Part: STM32F469
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M4
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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STM32479I-EVAL STM32479I-EVAL STMicroelectronics en.DM00208574.pdf Description: STM32F479 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F479
Part Status: Obsolete
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STM3274G-SK/IAR STM3274G-SK/IAR STMicroelectronics Description: IAR KICKSTART STM32F746/32F756
Part Status: Obsolete
Platform: IAR KickStart
Utilized IC / Part: STM32F746, STM32F756
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M7
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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STM32F469I-DISCO STM32F469I-DISCO STMicroelectronics en.DM00218382.pdf Description: DISCOVERY STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Platform: Discovery
Part Status: Active
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STM32L073Z-EVAL STM32L073Z-EVAL STMicroelectronics en.DM00141036.pdf Description: STM32L073VZ EVAL BRD
Utilized IC / Part: STM32L073VZ
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0+
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Active
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STEVAL-ISV020V1 STEVAL-ISV020V1 STMicroelectronics en.DM00101385.pdf Description: EVAL BOARD FOR SPV1050
Part Status: Active
Secondary Attributes: On-Board Test Points
Contents: Board(s)
Primary Attributes: Solar Powered
Supplied Contents: Board(s)
Utilized IC / Part: SPV1050
Type: Power Management
Function: Energy Harvesting
Packaging: Box
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STEVAL-ISV021V1 STEVAL-ISV021V1 STMicroelectronics en.DM00101387.pdf Description: EVAL BOARD FOR SPV1050
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: SPV1050
Type: Power Management
Function: Energy Harvesting
Packaging: Box
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VN7040ASTR VN7040ASTR STMicroelectronics en.DM00157100.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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VN7050ASTR VN7050ASTR STMicroelectronics en.DM00157092.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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VN7140ASTR VN7140ASTR STMicroelectronics en.DM00157115.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
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VNQ7140AJTR VNQ7140AJTR STMicroelectronics en.DM00157127.pdf Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
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250+3.2 EUR
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LSM6DS33TR STMicroelectronics Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Tape & Reel (TR)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
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LIS2DE12TR LIS2DE12TR STMicroelectronics en.DM00153214.pdf Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
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TSX712IYST TSX712IYST STMicroelectronics en.DM00108580.pdf Description: IC CMOS 2 CIRCUIT 8MINISO
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 200 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2.7 MHz
Slew Rate: 1.4V/µs
Current - Supply: 660µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
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LIS2DE12TR LIS2DE12TR STMicroelectronics en.DM00153214.pdf Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
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TSX712IYST TSX712IYST STMicroelectronics en.DM00108580.pdf Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 200 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2.7 MHz
Slew Rate: 1.4V/µs
Current - Supply: 660µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
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TSV991AIQ1T TSV991AIQ1T STMicroelectronics en.CD00144611.pdf Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Voltage - Input Offset: 1.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 20 MHz
Slew Rate: 10V/µs
Current - Supply: 820µA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
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TS556IDTTR TS556IDTTR STMicroelectronics en.CD00000894.pdf Description: IC OSC TIMER DUAL 2.7MHZ 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
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TSV991AIQ1T TSV991AIQ1T STMicroelectronics en.CD00144611.pdf Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Voltage - Input Offset: 1.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 20 MHz
Slew Rate: 10V/µs
Current - Supply: 820µA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 6-UFDFN
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TS556IDTTR TS556IDTTR STMicroelectronics en.CD00000894.pdf Description: IC OSC TIMER DUAL 2.7MHZ 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
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X-NUCLEO-PLC01A1 X-NUCLEO-PLC01A1 STMicroelectronics en.DM00209600.pdf Description: NUCLEO BOARD PLC GPIO
Packaging: Box
Function: GPIO
Type: Interface
Contents: Board(s)
Utilized IC / Part: CLT01-38SQ7, VNI8200XP
Platform: Nucleo
Part Status: Active
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STD110N8F6 STD110N8F6 STMicroelectronics en.DM00151073.pdf Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
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STD36P4LLF6 STD36P4LLF6 STMicroelectronics en.DM00101793.pdf Description: MOSFET P-CH 40V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
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STD4NK100Z STD4NK100Z STMicroelectronics en.DM00048613.pdf Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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STGB7H60DF STGB7H60DF STMicroelectronics en.DM00164492.pdf Description: IGBT TRENCH FS 600V 14A TO-263
Power - Max: 88 W
Current - Collector Pulsed (Icm): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 7A, 47Ohm, 15V
Switching Energy: 99µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 30ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Reverse Recovery Time (trr): 136 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL23NS3LLH7 STL23NS3LLH7 STMicroelectronics en.DM00091911.pdf Description: MOSFET N-CH 30V 92A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Produkt ist nicht verfügbar
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STL8P4LLF6 STL8P4LLF6 STMicroelectronics en.DM00101796.pdf Description: MOSFET P-CH 40V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
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STS7P4LLF6 STS7P4LLF6 STMicroelectronics en.DM00101798.pdf Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
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STD110N8F6 STD110N8F6 STMicroelectronics en.DM00151073.pdf Description: MOSFET N-CH 80V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Produkt ist nicht verfügbar
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STD36P4LLF6 STD36P4LLF6 STMicroelectronics en.DM00101793.pdf Description: MOSFET P-CH 40V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 7500 Stücke:
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2500+0.89 EUR
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STD4NK100Z STD4NK100Z STMicroelectronics en.DM00048613.pdf Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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STD9HN65M2 STMicroelectronics Description: MOSFET N-CH 650V 5.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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STGB7H60DF STGB7H60DF STMicroelectronics en.DM00164492.pdf Description: IGBT TRENCH FS 600V 14A TO-263
Power - Max: 88 W
Current - Collector Pulsed (Icm): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 7A, 47Ohm, 15V
Switching Energy: 99µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 30ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Reverse Recovery Time (trr): 136 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL110NS3LLH7 STL110NS3LLH7 STMicroelectronics en.DM00082932.pdf Description: MOSFET N-CH 30V 120A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL23NS3LLH7 STL23NS3LLH7 STMicroelectronics en.DM00091911.pdf Description: MOSFET N-CH 30V 92A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL7N6LF3 STL7N6LF3 STMicroelectronics en.DM00138248.pdf Description: MOSFET N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 4.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 25 V
Qualification: AEC-Q101
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3000+0.94 EUR
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STL8P4LLF6 STL8P4LLF6 STMicroelectronics en.DM00101796.pdf Description: MOSFET P-CH 40V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Produkt ist nicht verfügbar
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STS7P4LLF6 STS7P4LLF6 STMicroelectronics en.DM00101798.pdf Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
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2500+0.8 EUR
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STD12N60M2 STD12N60M2 STMicroelectronics std12n60m2.pdf Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 2500 Stücke:
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6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
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STH170N8F7-2 STH170N8F7-2 STMicroelectronics en.DM00117288.pdf Description: MOSFET N-CH 80V 120A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1252 Stücke:
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5+4.88 EUR
10+3.64 EUR
25+3.33 EUR
100+2.99 EUR
250+2.83 EUR
500+2.73 EUR
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STL12N60M2 STL12N60M2 STMicroelectronics en.DM00187264.pdf Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Produkt ist nicht verfügbar
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STL16N60M2 STL16N60M2 STMicroelectronics en.DM00148686.pdf Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V
auf Bestellung 2203 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.93 EUR
10+3.84 EUR
100+2.65 EUR
500+2.15 EUR
1000+2.07 EUR
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STD12N60M2 STD12N60M2 STMicroelectronics std12n60m2.pdf Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
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STL12N60M2 STL12N60M2 STMicroelectronics en.DM00187264.pdf Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
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STL86N3LLH6AG STL86N3LLH6AG STMicroelectronics STL86N3LLH6AG.pdf Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
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FERD20M60SR FERD20M60SR STMicroelectronics en.DM00148451.pdf Description: DIODE FERD 60V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A
Current - Reverse Leakage @ Vr: 230 µA @ 60 V
Produkt ist nicht verfügbar
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FERD40U50CFP FERD40U50CFP STMicroelectronics en.DM00190703.pdf Description: DIODE ARR FERD 50V 20A TO220FPAB
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF12N120K5 STF12N120K5 STMicroelectronics en.DM00117846.pdf Description: MOSFET N-CH 1200V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
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STTH80S06W STTH80S06W STMicroelectronics en.DM00215059.pdf Description: DIODE STANDARD 600V 80A DO247
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-247
Current - Average Rectified (Io): 80A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
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STW12N150K5 STW12N150K5 STMicroelectronics en.DM00182307.pdf Description: MOSFET N-CH 1500V 7A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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STM8AL3188TCY en.DM00148083.pdf
STM8AL3188TCY
Hersteller: STMicroelectronics
Description: IC MCU 8BIT 64KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Number of I/O: 41
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 25x12b; D/A 2x12b
Core Processor: STM8
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
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STM8AL318ATCY en.DM00148083.pdf
STM8AL318ATCY
Hersteller: STMicroelectronics
Description: IC MCU 8BIT 64KB FLASH 80LQFP
Number of I/O: 68
Part Status: Not For New Designs
Supplier Device Package: 80-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 28x12b; D/A 2x12b
Core Processor: STM8
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 4K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
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STTH2R02AFY en.DM00164386.pdf
STTH2R02AFY
Hersteller: STMicroelectronics
Description: DIODE STD 200V 2A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STTH2R02AFY en.DM00164386.pdf
STTH2R02AFY
Hersteller: STMicroelectronics
Description: DIODE STD 200V 2A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 2 A
Current - Reverse Leakage @ Vr: 800 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STTH3R02AFY en.DM00164391.pdf
STTH3R02AFY
Hersteller: STMicroelectronics
Description: DIODE STD 200V 3A SOD128FLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STTH3R02AFY en.DM00164391.pdf
STTH3R02AFY
Hersteller: STMicroelectronics
Description: DIODE STD 200V 3A SOD128FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD128Flat
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 3 A
Current - Reverse Leakage @ Vr: 1.6 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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1000+0.36 EUR
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SPC5-UDEDEBG en.DM00094241.pdf
SPC5-UDEDEBG
Hersteller: STMicroelectronics
Description: UDE STARTER KIT LICENCE UNLIMITD
License - User Details: Unlimited Connections
License Length: Perpetual
Operating System: Windows XP, Vista, 7, 8
Utilized IC / Part: SPC5
Applications: Programming
Type: License
Packaging: Bulk
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SPC5-UDESTK-PLUS DM00085838.pdf
Hersteller: STMicroelectronics
Description: LICENSE FULL PERPETUAL SPC5
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SPV1050TTR en.DM00100984.pdf
SPV1050TTR
Hersteller: STMicroelectronics
Description: IC BATT CHG MULTI-CHEM 20VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Multi-Chemistry
Supplier Device Package: 20-VFQFPN (3x3)
Charge Current - Max: 70mA
Voltage - Supply (Max): 18V
Battery Pack Voltage: 5.3V (Max)
Current - Charging: Constant - Programmable
Part Status: Active
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STEVAL-IDS002V1 STEVAL-IDS002V1.pdf
STEVAL-IDS002V1
Hersteller: STMicroelectronics
Description: BOARD EVAL WIRELESS PV SPV1050
Packaging: Box
Utilized IC / Part: SPV1050
Contents: Board(s)
Part Status: Obsolete
Supplied Contents: Board(s)
Type: Transmitter, Receiver
For Use With/Related Products: SPV1050
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STM32469I-EVAL en.DM00219980.pdf
STM32469I-EVAL
Hersteller: STMicroelectronics
Description: STM32F469 EVAL BRD
Part Status: Obsolete
Utilized IC / Part: STM32F469
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M4
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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STM32479I-EVAL en.DM00208574.pdf
STM32479I-EVAL
Hersteller: STMicroelectronics
Description: STM32F479 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F479
Part Status: Obsolete
Produkt ist nicht verfügbar
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STM3274G-SK/IAR
STM3274G-SK/IAR
Hersteller: STMicroelectronics
Description: IAR KICKSTART STM32F746/32F756
Part Status: Obsolete
Platform: IAR KickStart
Utilized IC / Part: STM32F746, STM32F756
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M7
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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STM32F469I-DISCO en.DM00218382.pdf
STM32F469I-DISCO
Hersteller: STMicroelectronics
Description: DISCOVERY STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Platform: Discovery
Part Status: Active
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STM32L073Z-EVAL en.DM00141036.pdf
STM32L073Z-EVAL
Hersteller: STMicroelectronics
Description: STM32L073VZ EVAL BRD
Utilized IC / Part: STM32L073VZ
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M0+
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Active
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STEVAL-ISV020V1 en.DM00101385.pdf
STEVAL-ISV020V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR SPV1050
Part Status: Active
Secondary Attributes: On-Board Test Points
Contents: Board(s)
Primary Attributes: Solar Powered
Supplied Contents: Board(s)
Utilized IC / Part: SPV1050
Type: Power Management
Function: Energy Harvesting
Packaging: Box
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STEVAL-ISV021V1 en.DM00101387.pdf
STEVAL-ISV021V1
Hersteller: STMicroelectronics
Description: EVAL BOARD FOR SPV1050
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: SPV1050
Type: Power Management
Function: Energy Harvesting
Packaging: Box
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VN7040ASTR en.DM00157100.pdf
VN7040ASTR
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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8+2.89 EUR
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VN7050ASTR en.DM00157092.pdf
VN7050ASTR
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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7+3.22 EUR
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VN7140ASTR en.DM00157115.pdf
VN7140ASTR
Hersteller: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Features: Auto Restart, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
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8+2.76 EUR
11+2.01 EUR
25+1.83 EUR
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VNQ7140AJTR en.DM00157127.pdf
VNQ7140AJTR
Hersteller: STMicroelectronics
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
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LSM6DS33TR
Hersteller: STMicroelectronics
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Tape & Reel (TR)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
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LIS2DE12TR en.DM00153214.pdf
LIS2DE12TR
Hersteller: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
Produkt ist nicht verfügbar
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TSX712IYST en.DM00108580.pdf
TSX712IYST
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8MINISO
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 200 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2.7 MHz
Slew Rate: 1.4V/µs
Current - Supply: 660µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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LIS2DE12TR en.DM00153214.pdf
LIS2DE12TR
Hersteller: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
Produkt ist nicht verfügbar
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TSX712IYST en.DM00108580.pdf
TSX712IYST
Hersteller: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Supplier Device Package: 8-MiniSO
Voltage - Input Offset: 200 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 2.7 MHz
Slew Rate: 1.4V/µs
Current - Supply: 660µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 2.7 V
Current - Output / Channel: 50 mA
Number of Circuits: 2
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TSV991AIQ1T en.CD00144611.pdf
TSV991AIQ1T
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Voltage - Input Offset: 1.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 20 MHz
Slew Rate: 10V/µs
Current - Supply: 820µA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TS556IDTTR en.CD00000894.pdf
TS556IDTTR
Hersteller: STMicroelectronics
Description: IC OSC TIMER DUAL 2.7MHZ 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
Produkt ist nicht verfügbar
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TSV991AIQ1T en.CD00144611.pdf
TSV991AIQ1T
Hersteller: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 35 mA
Number of Circuits: 1
Voltage - Input Offset: 1.5 mV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 20 MHz
Slew Rate: 10V/µs
Current - Supply: 820µA
Operating Temperature: -40°C ~ 125°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 6-UFDFN
auf Bestellung 1894 Stücke:
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TS556IDTTR en.CD00000894.pdf
TS556IDTTR
Hersteller: STMicroelectronics
Description: IC OSC TIMER DUAL 2.7MHZ 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
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X-NUCLEO-PLC01A1 en.DM00209600.pdf
X-NUCLEO-PLC01A1
Hersteller: STMicroelectronics
Description: NUCLEO BOARD PLC GPIO
Packaging: Box
Function: GPIO
Type: Interface
Contents: Board(s)
Utilized IC / Part: CLT01-38SQ7, VNI8200XP
Platform: Nucleo
Part Status: Active
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STD110N8F6 en.DM00151073.pdf
STD110N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 531 Stücke:
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STD36P4LLF6 en.DM00101793.pdf
STD36P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 8129 Stücke:
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STD4NK100Z en.DM00048613.pdf
STD4NK100Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 55 Stücke:
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4+6.07 EUR
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STGB7H60DF en.DM00164492.pdf
STGB7H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-263
Power - Max: 88 W
Current - Collector Pulsed (Icm): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 7A, 47Ohm, 15V
Switching Energy: 99µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 30ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Reverse Recovery Time (trr): 136 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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STL23NS3LLH7 en.DM00091911.pdf
STL23NS3LLH7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
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STL8P4LLF6 en.DM00101796.pdf
STL8P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 2962 Stücke:
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STS7P4LLF6 en.DM00101798.pdf
STS7P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 2853 Stücke:
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8+2.73 EUR
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STD110N8F6 en.DM00151073.pdf
STD110N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Produkt ist nicht verfügbar
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STD36P4LLF6 en.DM00101793.pdf
STD36P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 7500 Stücke:
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2500+0.89 EUR
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STD4NK100Z en.DM00048613.pdf
STD4NK100Z
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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STD9HN65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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STGB7H60DF en.DM00164492.pdf
STGB7H60DF
Hersteller: STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-263
Power - Max: 88 W
Current - Collector Pulsed (Icm): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 7A, 47Ohm, 15V
Switching Energy: 99µJ (on), 100µJ (off)
Td (on/off) @ 25°C: 30ns/160ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Reverse Recovery Time (trr): 136 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL110NS3LLH7 en.DM00082932.pdf
STL110NS3LLH7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 120A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL23NS3LLH7 en.DM00091911.pdf
STL23NS3LLH7
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STL7N6LF3 en.DM00138248.pdf
STL7N6LF3
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 4.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 25 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
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STL8P4LLF6 en.DM00101796.pdf
STL8P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Produkt ist nicht verfügbar
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STS7P4LLF6 en.DM00101798.pdf
STS7P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
2500+0.8 EUR
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STD12N60M2 std12n60m2.pdf
STD12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 2500 Stücke:
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6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
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STH170N8F7-2 en.DM00117288.pdf
STH170N8F7-2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 120A H2PAK-2
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1252 Stücke:
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5+4.88 EUR
10+3.64 EUR
25+3.33 EUR
100+2.99 EUR
250+2.83 EUR
500+2.73 EUR
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STL12N60M2 en.DM00187264.pdf
STL12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Produkt ist nicht verfügbar
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STL16N60M2 en.DM00148686.pdf
STL16N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V
auf Bestellung 2203 Stücke:
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10+3.84 EUR
100+2.65 EUR
500+2.15 EUR
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STD12N60M2 std12n60m2.pdf
STD12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
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2500+1.07 EUR
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STL12N60M2 en.DM00187264.pdf
STL12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Produkt ist nicht verfügbar
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STL86N3LLH6AG STL86N3LLH6AG.pdf
STL86N3LLH6AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FERD20M60SR en.DM00148451.pdf
FERD20M60SR
Hersteller: STMicroelectronics
Description: DIODE FERD 60V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A
Current - Reverse Leakage @ Vr: 230 µA @ 60 V
Produkt ist nicht verfügbar
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FERD40U50CFP en.DM00190703.pdf
FERD40U50CFP
Hersteller: STMicroelectronics
Description: DIODE ARR FERD 50V 20A TO220FPAB
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220FPAB
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: FERD (Field Effect Rectifier Diode)
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1189 Stücke:
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7+3.36 EUR
50+2.02 EUR
100+1.94 EUR
500+1.75 EUR
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STF12N120K5 en.DM00117846.pdf
STF12N120K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1200V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 599 Stücke:
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1+21 EUR
50+11.85 EUR
100+10.96 EUR
500+10.15 EUR
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STTH80S06W en.DM00215059.pdf
STTH80S06W
Hersteller: STMicroelectronics
Description: DIODE STANDARD 600V 80A DO247
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-247
Current - Average Rectified (Io): 80A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-247-2 (Straight Leads)
Packaging: Tube
Produkt ist nicht verfügbar
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STW12N150K5 en.DM00182307.pdf
STW12N150K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1500V 7A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 484 Stücke:
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2+17.01 EUR
30+9.44 EUR
120+8.48 EUR
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