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5.0SMDJ30AHM6G 5.0SMDJ30AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ30AHM6G 5.0SMDJ30AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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5.0SMDJ33A M6G 5.0SMDJ33A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
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5.0SMDJ33A M6G 5.0SMDJ33A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
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5.0SMDJ33AHM6G 5.0SMDJ33AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.9A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5.0SMDJ33AHM6G 5.0SMDJ33AHM6G Taiwan Semiconductor Corporation 5.0SMDJH%20SERIES_A2102.pdf Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.9A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5.0SMDJ78A M6G 5.0SMDJ78A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 78V 126V DO214AB
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5.0SMDJ78A M6G 5.0SMDJ78A M6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 78V 126V DO214AB
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5.0SMDJ78AHM6G 5.0SMDJ78AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 78V 126V DO214AB
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5.0SMDJ78AHM6G 5.0SMDJ78AHM6G Taiwan Semiconductor Corporation 5.0SMDJ%20SERIES_B1708.pdf Description: TVS DIODE 78V 126V DO214AB
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GBU2505 D2 GBU2505 D2 Taiwan Semiconductor Corporation GBU2504SERIESD2103.pdf Description: BRIDGE RECT 1PHASE 600V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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SSB44 R5G SSB44 R5G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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SSB44HR5G SSB44HR5G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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SSB44HR5G SSB44HR5G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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TESD5V0L1UC RJG TESD5V0L1UC RJG Taiwan Semiconductor Corporation TESD5V0L1UC_E2007.pdf Description: TVS DIODE 5VWM 15VC DFN1006L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 155°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
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TESD5V0L1UC RJG TESD5V0L1UC RJG Taiwan Semiconductor Corporation TESD5V0L1UC_E2007.pdf Description: TVS DIODE 5VWM 15VC DFN1006L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 155°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
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TS19830CS RLG TS19830CS RLG Taiwan Semiconductor Corporation TS19830CS_A1704.pdf Description: LED DRIVER
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TS19830CS RLG TS19830CS RLG Taiwan Semiconductor Corporation TS19830CS_A1704.pdf Description: LED DRIVER
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TSCR400CX6 RFG TSCR400CX6 RFG Taiwan Semiconductor Corporation TSCR400_402CX6_B1708.pdf Description: IC LED DRIVER LINEAR 65MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Voltage - Supply (Max): 40V
Part Status: Active
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TSCR400CX6 RFG TSCR400CX6 RFG Taiwan Semiconductor Corporation TSCR400_402CX6_B1708.pdf Description: IC LED DRIVER LINEAR 65MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Voltage - Supply (Max): 40V
Part Status: Active
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TSCR420CX6 RFG TSCR420CX6 RFG Taiwan Semiconductor Corporation Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
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TSCR420CX6 RFG TSCR420CX6 RFG Taiwan Semiconductor Corporation Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
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TSCR421CX6 RFG TSCR421CX6 RFG Taiwan Semiconductor Corporation Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 4.5V
Grade: Automotive
Part Status: Active
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TSCR421CX6 RFG TSCR421CX6 RFG Taiwan Semiconductor Corporation Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 4.5V
Grade: Automotive
Part Status: Active
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TSM160P04LCRHRLG TSM160P04LCRHRLG Taiwan Semiconductor Corporation Description: MOSFET P-CH 40V 51A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 20 V
Qualification: AEC-Q101
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TSM160P04LCRHRLG TSM160P04LCRHRLG Taiwan Semiconductor Corporation Description: MOSFET P-CH 40V 51A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 20 V
Qualification: AEC-Q101
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TSM4800N15CX6 RFG TSM4800N15CX6 RFG Taiwan Semiconductor Corporation TSM4800N15CX6_B1811.pdf Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
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TSM4800N15CX6 RFG TSM4800N15CX6 RFG Taiwan Semiconductor Corporation TSM4800N15CX6_B1811.pdf Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
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TSM60NB099CF C0G TSM60NB099CF C0G Taiwan Semiconductor Corporation Description: MOSFET N-CH 600V 38A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.3A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
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TSM60NB150CF C0G TSM60NB150CF C0G Taiwan Semiconductor Corporation TSM60NB150CF_A1705.pdf Description: MOSFET N-CH 600V 24A ITO220S
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TST20H300CW C0G TST20H300CW C0G Taiwan Semiconductor Corporation TST20H300CW_C2104.pdf Description: DIODE
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1N4742A A0G 1N4742A A0G Taiwan Semiconductor Corporation 1N4740A SERIES_O2104.pdf Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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1.5KE100CA R0G 1.5KE100CA R0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_N1602.pdf Description: TVS DIODE 85.5VWM 137VC DO201
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1.5KE27A R0G 1.5KE27A R0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 23.1VWM 37.5VC DO201
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1.5KE400CA R0G 1.5KE400CA R0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 342VWM 548VC DO201
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1.5KE47CA R0G 1.5KE47CA R0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 40.2VWM 64.8VC DO201
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1.5KE51CA R0G 1.5KE51CA R0G Taiwan Semiconductor Corporation 1.5KE%20SERIES_O2104.pdf Description: TVS DIODE 43.6VWM 70.1VC DO201
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1.5SMC47CA R7G 1.5SMC47CA R7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 40.2VWM 64.8VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1N4148W-G RHG 1N4148W-G RHG Taiwan Semiconductor Corporation 1N4148W-G_D1601.pdf Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
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1N4148WS-G RVG 1N4148WS-G RVG Taiwan Semiconductor Corporation 1N4148WS-G_C2211.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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1SMA5928 R3G 1SMA5928 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 13V 1.5W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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1SMA5929 R3G 1SMA5929 R3G Taiwan Semiconductor Corporation 1SMA5926%20SERIES_L2102.pdf Description: DIODE ZENER 15V 1.5W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 11.4 V
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BAT43WS RRG BAT43WS RRG Taiwan Semiconductor Corporation BAT42WS SERIES_I2212.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAV21W-G RHG BAV21W-G RHG Taiwan Semiconductor Corporation BAV19W-G SERIES_D1603.pdf Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BAV99 RFG BAV99 RFG Taiwan Semiconductor Corporation BAW56 SERIES_I2001.pdf Description: DIODE ARRAY GP 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
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BAW56 RFG BAW56 RFG Taiwan Semiconductor Corporation BAW56 SERIES_I2001.pdf Description: DIODE ARRAY GP 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 3103 Stücke:
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BC846B RFG BC846B RFG Taiwan Semiconductor Corporation BC846A Series_I2001.pdf Description: TRANS NPN 65V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
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BZT52B22 RHG BZT52B22 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 22V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
auf Bestellung 7432 Stücke:
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BZT52B27 RHG BZT52B27 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 27V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
auf Bestellung 5564 Stücke:
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BZT52B6V2 RHG BZT52B6V2 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 6.2V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
auf Bestellung 6517 Stücke:
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104+0.17 EUR
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500+0.072 EUR
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BZT52C12 RHG BZT52C12 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 12V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52C16S RRG BZT52C16S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 16V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 11.2 V
Produkt ist nicht verfügbar
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BZT52C18S RRG BZT52C18S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 18V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
auf Bestellung 943 Stücke:
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BZT52C3V0S RRG BZT52C3V0S RRG Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 3V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
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BZT52C3V3 RHG BZT52C3V3 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 3.3V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
auf Bestellung 2990 Stücke:
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205+0.086 EUR
500+0.084 EUR
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BZT52C47 RHG BZT52C47 RHG Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 47V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 33 V
auf Bestellung 3040 Stücke:
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BZT52C4V3 RHG BZT52C4V3 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 4.3V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
auf Bestellung 1461 Stücke:
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BZT52C51 RHG BZT52C51 RHG Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 51V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 35.7 V
auf Bestellung 5537 Stücke:
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BZT52C5V1 RHG BZT52C5V1 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 5.1V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
auf Bestellung 4831 Stücke:
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BZT52C5V6 RHG BZT52C5V6 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
auf Bestellung 4613 Stücke:
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84+0.21 EUR
136+0.13 EUR
280+0.063 EUR
500+0.061 EUR
1000+0.06 EUR
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5.0SMDJ30AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ30AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ30AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ30AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5.0SMDJ33A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ33A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AB
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5.0SMDJ33A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ33A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AB
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5.0SMDJ33AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ33AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.9A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3+7.22 EUR
10+4.77 EUR
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5.0SMDJ33AHM6G 5.0SMDJH%20SERIES_A2102.pdf
5.0SMDJ33AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93.9A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3000+1.17 EUR
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5.0SMDJ78A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ78A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78V 126V DO214AB
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5.0SMDJ78A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ78A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78V 126V DO214AB
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5.0SMDJ78AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ78AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78V 126V DO214AB
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5.0SMDJ78AHM6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ78AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78V 126V DO214AB
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GBU2505 D2 GBU2504SERIESD2103.pdf
GBU2505 D2
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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5+4.17 EUR
20+2.44 EUR
100+1.99 EUR
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SSB44 R5G
SSB44 R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
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14+1.34 EUR
20+0.9 EUR
100+0.62 EUR
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SSB44HR5G
SSB44HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 238 Stücke:
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13+1.37 EUR
20+0.92 EUR
100+0.63 EUR
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SSB44HR5G
SSB44HR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 235pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 4 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TESD5V0L1UC RJG TESD5V0L1UC_E2007.pdf
TESD5V0L1UC RJG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 15VC DFN1006L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 155°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
auf Bestellung 14982 Stücke:
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34+0.53 EUR
49+0.36 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
2000+0.089 EUR
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TESD5V0L1UC RJG TESD5V0L1UC_E2007.pdf
TESD5V0L1UC RJG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 5VWM 15VC DFN1006L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 155°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1006L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 100W
Power Line Protection: No
Part Status: Active
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TS19830CS RLG TS19830CS_A1704.pdf
TS19830CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: LED DRIVER
auf Bestellung 4955 Stücke:
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TS19830CS RLG TS19830CS_A1704.pdf
TS19830CS RLG
Hersteller: Taiwan Semiconductor Corporation
Description: LED DRIVER
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TSCR400CX6 RFG TSCR400_402CX6_B1708.pdf
TSCR400CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER LINEAR 65MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Voltage - Supply (Max): 40V
Part Status: Active
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11+1.67 EUR
12+1.47 EUR
25+1.38 EUR
100+1.13 EUR
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500+0.89 EUR
1000+0.71 EUR
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TSCR400CX6 RFG TSCR400_402CX6_B1708.pdf
TSCR400CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRIVER LINEAR 65MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Voltage - Supply (Max): 40V
Part Status: Active
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3000+0.65 EUR
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TSCR420CX6 RFG
TSCR420CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
auf Bestellung 6624 Stücke:
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14+1.27 EUR
23+0.78 EUR
28+0.65 EUR
100+0.5 EUR
250+0.43 EUR
500+0.39 EUR
1000+0.35 EUR
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TSCR420CX6 RFG
TSCR420CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.27 EUR
6000+0.26 EUR
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TSCR421CX6 RFG
TSCR421CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 4.5V
Grade: Automotive
Part Status: Active
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14+1.27 EUR
23+0.78 EUR
28+0.65 EUR
100+0.5 EUR
250+0.43 EUR
500+0.39 EUR
1000+0.35 EUR
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TSCR421CX6 RFG
TSCR421CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR LIN PWM 11MA SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 11mA
Internal Switch(s): Yes
Supplier Device Package: SOT-26
Dimming: PWM
Voltage - Supply (Max): 4.5V
Grade: Automotive
Part Status: Active
Produkt ist nicht verfügbar
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TSM160P04LCRHRLG
TSM160P04LCRHRLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 40V 51A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 20 V
Qualification: AEC-Q101
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TSM160P04LCRHRLG
TSM160P04LCRHRLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET P-CH 40V 51A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSM4800N15CX6 RFG TSM4800N15CX6_B1811.pdf
TSM4800N15CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
auf Bestellung 15210 Stücke:
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Anzahl Preis
15+1.21 EUR
22+0.83 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.39 EUR
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TSM4800N15CX6 RFG TSM4800N15CX6_B1811.pdf
TSM4800N15CX6 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.32 EUR
6000+0.3 EUR
9000+0.28 EUR
Mindestbestellmenge: 3000
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TSM60NB099CF C0G
TSM60NB099CF C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 38A ITO220S
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.3A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Produkt ist nicht verfügbar
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TSM60NB150CF C0G TSM60NB150CF_A1705.pdf
TSM60NB150CF C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 24A ITO220S
auf Bestellung 56 Stücke:
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TST20H300CW C0G TST20H300CW_C2104.pdf
TST20H300CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE
auf Bestellung 999 Stücke:
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1N4742A A0G 1N4740A SERIES_O2104.pdf
1N4742A A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
auf Bestellung 3362 Stücke:
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Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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1.5KE100CA R0G 1.5KE%20SERIES_N1602.pdf
1.5KE100CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 85.5VWM 137VC DO201
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1.5KE27A R0G 1.5KE%20SERIES_O2104.pdf
1.5KE27A R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5VC DO201
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1.5KE400CA R0G 1.5KE%20SERIES_O2104.pdf
1.5KE400CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO201
Produkt ist nicht verfügbar
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1.5KE47CA R0G 1.5KE%20SERIES_O2104.pdf
1.5KE47CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO201
auf Bestellung 1679 Stücke:
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Anzahl Preis
7+2.57 EUR
10+2.3 EUR
100+1.79 EUR
500+1.48 EUR
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1.5KE51CA R0G 1.5KE%20SERIES_O2104.pdf
1.5KE51CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1VC DO201
auf Bestellung 2459 Stücke:
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Anzahl Preis
9+2.02 EUR
10+1.82 EUR
100+1.42 EUR
500+1.17 EUR
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1.5SMC47CA R7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC47CA R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2VWM 64.8VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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1N4148W-G RHG 1N4148W-G_D1601.pdf
1N4148W-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
auf Bestellung 65215 Stücke:
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Anzahl Preis
112+0.16 EUR
170+0.1 EUR
202+0.087 EUR
500+0.063 EUR
1000+0.055 EUR
Mindestbestellmenge: 112
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1N4148WS-G RVG 1N4148WS-G_C2211.pdf
1N4148WS-G RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 16267 Stücke:
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Anzahl Preis
77+0.23 EUR
132+0.13 EUR
214+0.082 EUR
500+0.06 EUR
1000+0.052 EUR
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1SMA5928 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5928 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.5W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 8 Stücke:
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1SMA5929 R3G 1SMA5926%20SERIES_L2102.pdf
1SMA5929 R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 1.5W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AC (SMA)
Part Status: Discontinued at Digi-Key
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 11.4 V
Produkt ist nicht verfügbar
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BAT43WS RRG BAT42WS SERIES_I2212.pdf
BAT43WS RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD323F
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 7744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
78+0.23 EUR
125+0.14 EUR
500+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 48
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BAV21W-G RHG BAV19W-G SERIES_D1603.pdf
BAV21W-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 5450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
171+0.1 EUR
500+0.075 EUR
1000+0.066 EUR
Mindestbestellmenge: 100
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BAV99 RFG BAW56 SERIES_I2001.pdf
BAV99 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 9600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
143+0.12 EUR
177+0.1 EUR
500+0.072 EUR
1000+0.064 EUR
Mindestbestellmenge: 100
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BAW56 RFG BAW56 SERIES_I2001.pdf
BAW56 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 3103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
110+0.16 EUR
177+0.099 EUR
500+0.072 EUR
1000+0.063 EUR
Mindestbestellmenge: 63
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BC846B RFG BC846A Series_I2001.pdf
BC846B RFG
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
auf Bestellung 21861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
121+0.15 EUR
196+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
Mindestbestellmenge: 72
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BZT52B22 RHG BZT52B2V4 series_F15.pdf
BZT52B22 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
auf Bestellung 7432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
94+0.19 EUR
152+0.12 EUR
500+0.085 EUR
1000+0.075 EUR
Mindestbestellmenge: 56
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BZT52B27 RHG BZT52B2V4 series_F15.pdf
BZT52B27 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 18.9 V
auf Bestellung 5564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
108+0.16 EUR
252+0.07 EUR
500+0.067 EUR
1000+0.065 EUR
Mindestbestellmenge: 72
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BZT52B6V2 RHG BZT52B2V4 series_F15.pdf
BZT52B6V2 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 4 V
auf Bestellung 6517 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
104+0.17 EUR
232+0.076 EUR
500+0.072 EUR
1000+0.068 EUR
Mindestbestellmenge: 72
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BZT52C12 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C12 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
Produkt ist nicht verfügbar
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BZT52C16S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C16S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 11.2 V
Produkt ist nicht verfügbar
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BZT52C18S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C18S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
auf Bestellung 943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
84+0.21 EUR
134+0.13 EUR
500+0.096 EUR
Mindestbestellmenge: 50
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BZT52C3V0S RRG BZT52C2V4S SERIES_J2212.pdf
BZT52C3V0S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 9 µA @ 1 V
Produkt ist nicht verfügbar
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BZT52C3V3 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C3V3 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.3V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 4.5 µA @ 1 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
205+0.086 EUR
500+0.084 EUR
1000+0.067 EUR
Mindestbestellmenge: 63
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BZT52C47 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C47 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 33 V
auf Bestellung 3040 Stücke:
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Anzahl Preis
38+0.48 EUR
46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.092 EUR
Mindestbestellmenge: 38
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BZT52C4V3 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C4V3 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 2.7 µA @ 1 V
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.2 EUR
146+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
Mindestbestellmenge: 56
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BZT52C51 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C51 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW SOD123F
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 35.7 V
auf Bestellung 5537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
41+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.1 EUR
Mindestbestellmenge: 34
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BZT52C5V1 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C5V1 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1.8 µA @ 2 V
auf Bestellung 4831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
117+0.15 EUR
287+0.061 EUR
1000+0.06 EUR
Mindestbestellmenge: 77
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BZT52C5V6 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C5V6 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
auf Bestellung 4613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
136+0.13 EUR
280+0.063 EUR
500+0.061 EUR
1000+0.06 EUR
Mindestbestellmenge: 84
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