Die Produkte taiwan semiconductor corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung |
Informationen zu Lagerverfügbarkeit und Lieferzeiten |
Preis ohne MwSt |
|---|---|---|---|---|---|---|
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P4KE39AHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL Packaging: Bulk Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 33.3V Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Current - Peak Pulse (10/1000µs): 7.7A Power - Peak Pulse: 400W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1.5KE7.5CAHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 139A Voltage - Reverse Standoff (Typ): 6.4V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.13V Voltage - Clamping (Max) @ Ipp: 11.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1.5KE7.5CAHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 6.4VWM 11.3VC DO201 Voltage - Breakdown (Min): 7.13V Bidirectional Channels: 1 Supplier Device Package: DO-201 Voltage - Reverse Standoff (Typ): 6.4V Current - Peak Pulse (10/1000µs): 139A Applications: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 11.3V Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Packaging: Bulk |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS10P05G D2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A Current - Average Rectified (Io): 10A Voltage - Peak Reverse (Max): 600V Technology: Standard Diode Type: Single Phase Part Status: Active Packaging: Tube Supplier Device Package: TS-6P Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Current - Reverse Leakage @ Vr: 10µA @ 600V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1119 Stücke  Lieferzeit 21-28 Tag (e) |
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TS10P05G C2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Packaging: Tube Part Status: Active Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS10P05GHC2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Packaging: Tube Part Status: Active Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS10P05GHD2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 600V 10A TS-6P Packaging: Tube Part Status: Active Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR3035CT C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 35V TO220AB Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 200 µA @ 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Discontinued at Digi-Key |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR3035CTHC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 35V TO220AB Packaging: Tube Current - Reverse Leakage @ Vr: 200 µA @ 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-220-3 |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MBR3035PT C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 35V TO247AD Current - Reverse Leakage @ Vr: 1 mA @ 35 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 35 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-247AD (TO-3P) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SFF10L05G C0G | Taiwan Semiconductor Corporation |
Description: 35NS, 10A, 300V, SUPER FAST RECO Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AB Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-26B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6V 41.5V DO204AL Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: BZW04 Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 9.6A Voltage - Clamping (Max) @ Ipp: 41.5V Voltage - Breakdown (Min): 28.5V Voltage - Reverse Standoff (Typ): 25.6V Bidirectional Channels: 1 Type: Zener |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-273B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 273V 438V DO204AL Base Part Number: BZW04 Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 900mA Voltage - Clamping (Max) @ Ipp: 438V Voltage - Breakdown (Min): 304V Voltage - Reverse Standoff (Typ): 273V Bidirectional Channels: 1 Part Status: Active Type: Zener |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-28B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7VC DO204AL Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 8.8A Voltage - Clamping (Max) @ Ipp: 45.7V Voltage - Breakdown (Min): 31.4V Voltage - Reverse Standoff (Typ): 28.2V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-299B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 299V 482V DO204AL Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 800mA Voltage - Clamping (Max) @ Ipp: 482V Voltage - Breakdown (Min): 332V Voltage - Reverse Standoff (Typ): 299V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: BZW04 Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-31B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 30.8V 49.9V DO204AL Base Part Number: BZW04 Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 8A Voltage - Clamping (Max) @ Ipp: 49.9V Voltage - Breakdown (Min): 34.2V Voltage - Reverse Standoff (Typ): 30.8V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-33B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO204AL Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 7.4A Voltage - Clamping (Max) @ Ipp: 53.9V Voltage - Breakdown (Min): 37.1V Voltage - Reverse Standoff (Typ): 33.3V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: BZW04 Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-342B R0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 342V 548V DO204AL Base Part Number: BZW04 Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Current - Peak Pulse (10/1000µs): 750mA Voltage - Clamping (Max) @ Ipp: 548V Voltage - Breakdown (Min): 380V Voltage - Reverse Standoff (Typ): 342V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Power - Peak Pulse: 400W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-40HR0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 6.2A Voltage - Clamping (Max) @ Ipp: 64.8V Voltage - Breakdown (Min): 44.7V Voltage - Reverse Standoff (Typ): 40.2V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-40 R1G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL Supplier Device Package: DO-204AL (DO-41) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 6.2A Voltage - Clamping (Max) @ Ipp: 64.8V Voltage - Breakdown (Min): 44.7V Voltage - Reverse Standoff (Typ): 40.2V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-40HR1G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL Applications: Automotive Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 6.2A Voltage - Clamping (Max) @ Ipp: 64.8V Voltage - Breakdown (Min): 44.7V Voltage - Reverse Standoff (Typ): 40.2V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-40 A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL Packaging: Tape & Box (TB) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 40.2V Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Current - Peak Pulse (10/1000µs): 6.2A Power - Peak Pulse: 400W Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-40HA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL Packaging: Tape & Box (TB) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 40.2V Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Current - Peak Pulse (10/1000µs): 6.2A Power - Peak Pulse: 400W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZW04-40HB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 40.2V 64.8V DO204AL Packaging: Bulk Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 40.2V Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Current - Peak Pulse (10/1000µs): 6.2A Power - Peak Pulse: 400W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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.jpg "RS1GAL M3G") |
RS1GAL M3G | Taiwan Semiconductor Corporation |
Description: 150NS, 1A, 400V, FAST RECOVERY R Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 1A (DC) Capacitance @ Vr, F: 7pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 7000 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: 150NS, 1A, 400V, FAST RECOVERY R Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 1A (DC) Capacitance @ Vr, F: 7pF @ 4V, 1MHz Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 7000 Stücke Lieferzeit 21-28 Tag (e) |
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ES1F R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1045 Stücke Lieferzeit 21-28 Tag (e) |
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ES1FL RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Base Part Number: ES1F Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: ES1F Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 2930 Stücke Lieferzeit 21-28 Tag (e) |
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ES1F M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 18pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL RQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHRQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL RUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 1V, 1MHz |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A DO214AC Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Capacitance @ Vr, F: 16pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHRHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL MHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Part Status: Active Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 8pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 300V Reverse Recovery Time (trr): 35ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Current - Average Rectified (Io): 1A Voltage - DC Reverse (Vr) (Max): 300V Diode Type: Standard |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHMHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL MQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL MTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FL RTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHMTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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ES1FLHRTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1N5255B A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 28V 500MW DO35 Power - Max: 500mW Tolerance: ±5% Voltage - Zener (Nom) (Vz): 28V Supplier Device Package: DO-35 Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA Current - Reverse Leakage @ Vr: 100nA @ 21V Impedance (Max) (Zzt): 44 Ohms Part Status: Active Packaging: Tape & Box (TB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SMAJ14CHR3G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Current - Peak Pulse (10/1000µs): 15.5A Voltage - Clamping (Max) @ Ipp: 25.8V Voltage - Breakdown (Min): 15.6V Voltage - Reverse Standoff (Typ): 14V Bidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 400W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Current - Peak Pulse (10/1000µs): 15.5A Voltage - Clamping (Max) @ Ipp: 25.8V Voltage - Breakdown (Min): 15.6V Voltage - Reverse Standoff (Typ): 14V Bidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Power - Peak Pulse: 400W |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 3309 Stücke Lieferzeit 21-28 Tag (e) |
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SMAJ14HR3G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Unidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 15.5A Voltage - Clamping (Max) @ Ipp: 25.8V Voltage - Breakdown (Min): 15.6V Voltage - Reverse Standoff (Typ): 14V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1800 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: TVS DIODE 14VWM 25.8VC DO214AC Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 15.5A Voltage - Clamping (Max) @ Ipp: 25.8V Voltage - Breakdown (Min): 15.6V Voltage - Reverse Standoff (Typ): 14V Unidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 3480 Stücke Lieferzeit 21-28 Tag (e) |
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P6SMB39A M4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 33.3V Current - Peak Pulse (10/1000µs): 11.6A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 53.9V Voltage - Breakdown (Min): 37.1V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P6SMB39AHM4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 11.6A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P6SMB39AHR5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9VC DO214AA Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 53.9V Voltage - Breakdown (Min): 37.1V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 33.3V Current - Peak Pulse (10/1000µs): 11.6A Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1KSMB39A M4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO214AA Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Clamping (Max) @ Ipp: 53.9V Voltage - Breakdown (Min): 37.1V Voltage - Reverse Standoff (Typ): 33.3V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1000W (1kW) Current - Peak Pulse (10/1000µs): 18.6A |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1KSMB39AHM4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 33.3V Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1KSMB39A R5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO214AA Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1000W (1kW) Current - Peak Pulse (10/1000µs): 18.6A Voltage - Clamping (Max) @ Ipp: 53.9V Voltage - Breakdown (Min): 37.1V Voltage - Reverse Standoff (Typ): 33.3V Unidirectional Channels: 1 Type: Zener Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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1KSMB39AHR5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3V 53.9V DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 33.3V Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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S2JA R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO214AC Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1800 Stücke Lieferzeit 21-28 Tag (e) |
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P4KE16CA R1G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.6A Voltage - Reverse Standoff (Typ): 13.6V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P4KE16CAHR1G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO204AL Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 13.6V Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 400W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P4KE16CA A0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO204AL Packaging: Tape & Box (TB) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 13.6V Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 400W Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P4KE16CAHA0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO204AL Packaging: Tape & Box (TB) Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 13.6V Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 400W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P4KE16CA B0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO204AL Packaging: Bulk Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 13.6V Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 400W Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P4KE16CAHB0G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 13.6V 22.5V DO204AL Packaging: Bulk Part Status: Active Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 13.6V Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Current - Peak Pulse (10/1000µs): 18.6A Power - Peak Pulse: 400W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZX85C47 R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 1.3W DO204AL Package / Case: DO-204AL, DO-41, Axial Current - Reverse Leakage @ Vr: 500 nA @ 33 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Power - Max: 1.3 W Tolerance: ±5% Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 47 V Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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BZX85C47 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 1.3W DO204AL Current - Reverse Leakage @ Vr: 500 nA @ 33 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Power - Max: 1.3 W Part Status: Active Supplier Device Package: DO-204AL (DO-41) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Tape & Box (TB) Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 47 V Operating Temperature: -65°C ~ 200°C (TJ) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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P6KE6.8CAH | Taiwan Semiconductor Corporation |
Description: TVS 600W 6.8V DO-15 Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 60A Voltage - Reverse Standoff (Typ): 5.8V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 10.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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MTZJ12SA R0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 11.42V 500MW DO34 Current - Reverse Leakage @ Vr: 200 nA @ 9 V Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-34 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 11.42 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL RVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 500ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 2880 Stücke Lieferzeit 21-28 Tag (e) |
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RSFJL R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL RQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL RTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHRQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHRTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL RUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHRHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL MHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHMHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL MQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL MTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHMTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJL RFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHRFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Package / Case: DO-219AB Mounting Type: Surface Mount Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 5µA @ 600V Reverse Recovery Time (trr): 250ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Current - Average Rectified (Io): 500mA Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHRUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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RSFJLHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 500MA SUBSMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS25P04G C2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 25A TS-6P Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS25P04G D2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 25A TS-6P Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS25P04GHC2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 25A TS-6P Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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TS25P04GHD2G |
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Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1P 400V 25A TS-6P Supplier Device Package: TS-6P Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Packaging: Tube Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
Informationen zu Lagerverfügbarkeit und Lieferzeiten Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SMAJ22CAHR3G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 35.5VC DO214AC Base Part Number: SMAJ22 Supplier Device Package: DO-214AC (SMA) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Power Line Protection: No Power - Peak Pulse: 400W Current - Peak Pulse (10/1000µs): 11.3A Voltage - Clamping (Max) @ Ipp: 35.5V Voltage - Breakdown (Min): 24.4V Voltage - Reverse Standoff (Typ): 22V Bidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation |
Informationen zu Lagerverfügbarkeit und Lieferzeiten auf Bestellung 1800 Stücke Lieferzeit 21-28 Tag (e) |
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| P4KE39AHB0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33.3V
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Current - Peak Pulse (10/1000µs): 7.7A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3V 53.9V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33.3V
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Current - Peak Pulse (10/1000µs): 7.7A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| 1.5KE7.5CAHA0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 6.4VWM 11.3VC DO201
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 6.4V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.13V
Voltage - Clamping (Max) @ Ipp: 11.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
| 1.5KE7.5CAHB0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 6.4VWM 11.3VC DO201
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 6.4VWM 11.3VC DO201
Voltage - Breakdown (Min): 7.13V
Bidirectional Channels: 1
Supplier Device Package: DO-201
Voltage - Reverse Standoff (Typ): 6.4V
Current - Peak Pulse (10/1000µs): 139A
Applications: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 11.3V
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Packaging: Bulk
| TS10P05G D2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 600V
auf Bestellung 1119 Stücke Description: BRIDGE RECT 1P 600V 10A TS-6P
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Supplier Device Package: TS-6P
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Lieferzeit 21-28 Tag (e)
| TS10P05G C2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
| TS10P05GHC2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
| TS10P05GHD2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 600V 10A TS-6P
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P
| MBR3035CT C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 35V TO220AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 35V TO220AB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Discontinued at Digi-Key
| MBR3035CTHC0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 35V TO220AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 35V TO220AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-220-3
| MBR3035PT C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 35V TO247AD
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTTKY 35V TO247AD
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247AD (TO-3P)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| SFF10L05G C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 10A, 300V, SUPER FAST RECO
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 35NS, 10A, 300V, SUPER FAST RECO
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AB
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| BZW04-26B R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6V 41.5V DO204AL
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 9.6A
Voltage - Clamping (Max) @ Ipp: 41.5V
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Bidirectional Channels: 1
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 25.6V 41.5V DO204AL
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 9.6A
Voltage - Clamping (Max) @ Ipp: 41.5V
Voltage - Breakdown (Min): 28.5V
Voltage - Reverse Standoff (Typ): 25.6V
Bidirectional Channels: 1
Type: Zener
| BZW04-273B R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 273V 438V DO204AL
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Clamping (Max) @ Ipp: 438V
Voltage - Breakdown (Min): 304V
Voltage - Reverse Standoff (Typ): 273V
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 273V 438V DO204AL
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Clamping (Max) @ Ipp: 438V
Voltage - Breakdown (Min): 304V
Voltage - Reverse Standoff (Typ): 273V
Bidirectional Channels: 1
Part Status: Active
Type: Zener
| BZW04-28B R0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7VC DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28.2VWM 45.7VC DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
| BZW04-299B R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 299V 482V DO204AL
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 800mA
Voltage - Clamping (Max) @ Ipp: 482V
Voltage - Breakdown (Min): 332V
Voltage - Reverse Standoff (Typ): 299V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 299V 482V DO204AL
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 800mA
Voltage - Clamping (Max) @ Ipp: 482V
Voltage - Breakdown (Min): 332V
Voltage - Reverse Standoff (Typ): 299V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
| BZW04-31B R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8V 49.9V DO204AL
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 8A
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 30.8V 49.9V DO204AL
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 8A
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
| BZW04-33B R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3V 53.9V DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
| BZW04-342B R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 342V 548V DO204AL
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Current - Peak Pulse (10/1000µs): 750mA
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Voltage - Reverse Standoff (Typ): 342V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 400W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 342V 548V DO204AL
Base Part Number: BZW04
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Current - Peak Pulse (10/1000µs): 750mA
Voltage - Clamping (Max) @ Ipp: 548V
Voltage - Breakdown (Min): 380V
Voltage - Reverse Standoff (Typ): 342V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Power - Peak Pulse: 400W
| BZW04-40HR0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 40.2V 64.8V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
| BZW04-40 R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 40.2V 64.8V DO204AL
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
| BZW04-40HR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 40.2V 64.8V DO204AL
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| BZW04-40 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 40.2V 64.8V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| BZW04-40HA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 40.2V 64.8V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| BZW04-40HB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 40.2V 64.8V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 40.2V 64.8V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40.2V
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| RS1GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
auf Bestellung 7000 Stücke Description: 150NS, 1A, 400V, FAST RECOVERY R
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Lieferzeit 21-28 Tag (e)
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
| RS1GAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 1A, 400V, FAST RECOVERY R
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 7000 Stücke Description: 150NS, 1A, 400V, FAST RECOVERY R
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
| ES1F R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
auf Bestellung 1045 Stücke Description: DIODE GEN PURP 300V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
| ES1FL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Base Part Number: ES1F
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Base Part Number: ES1F
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 2930 Stücke - Preis und Lieferfrist anzeigen
| ES1FL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: ES1F
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
auf Bestellung 2930 Stücke Description: DIODE GEN PURP 300V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: ES1F
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Lieferzeit 21-28 Tag (e)
| ES1F M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
| ES1FHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
| ES1FL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
| ES1FLHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
| ES1FLHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| ES1FL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
| ES1FHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| ES1FL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| ES1FLHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| ES1FL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| ES1FL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 300V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 300V
Diode Type: Standard
| ES1FLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FLHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FLHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FLHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1FLHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| 1N5255B A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 28V 500MW DO35
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 28V
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 44 Ohms
Part Status: Active
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 28V 500MW DO35
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 28V
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 100nA @ 21V
Impedance (Max) (Zzt): 44 Ohms
Part Status: Active
Packaging: Tape & Box (TB)
| SMAJ14CHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 14VWM 25.8VC DO214AC
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
auf Bestellung 3309 Stücke - Preis und Lieferfrist anzeigen
| SMAJ14CHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Power - Peak Pulse: 400W
auf Bestellung 3309 Stücke Description: TVS DIODE 14VWM 25.8VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Bidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Power - Peak Pulse: 400W
Lieferzeit 21-28 Tag (e)
| SMAJ14HR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
auf Bestellung 1800 Stücke Description: TVS DIODE 14VWM 25.8VC DO214AC
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3480 Stücke - Preis und Lieferfrist anzeigen
| SMAJ14HR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 14VWM 25.8VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
auf Bestellung 3480 Stücke Description: TVS DIODE 14VWM 25.8VC DO214AC
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 15.5A
Voltage - Clamping (Max) @ Ipp: 25.8V
Voltage - Breakdown (Min): 15.6V
Voltage - Reverse Standoff (Typ): 14V
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
| P6SMB39A M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3VWM 53.9VC DO214AA
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
| P6SMB39AHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
| P6SMB39AHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3VWM 53.9VC DO214AA
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 11.6A
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
| 1KSMB39A M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 18.6A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3V 53.9V DO214AA
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 18.6A
| 1KSMB39AHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33.3V
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3V 53.9V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33.3V
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| 1KSMB39A R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3V 53.9V DO214AA
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Voltage - Reverse Standoff (Typ): 33.3V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
| 1KSMB39AHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3V 53.9V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33.3V
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 33.3V 53.9V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 33.3V
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| S2JA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 1800 Stücke Description: DIODE GEN PURP 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Lieferzeit 21-28 Tag (e)
| P4KE16CA R1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
| P4KE16CAHR1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| P4KE16CA A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| P4KE16CAHA0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Tape & Box (TB)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| P4KE16CA B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| P4KE16CAHB0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 13.6V 22.5V DO204AL
Packaging: Bulk
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 13.6V
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Current - Peak Pulse (10/1000µs): 18.6A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
| BZX85C47 R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1.3W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 47V 1.3W DO204AL
Package / Case: DO-204AL, DO-41, Axial
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1220 Stücke - Preis und Lieferfrist anzeigen
| BZX85C47 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 200°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 47V 1.3W DO204AL
Current - Reverse Leakage @ Vr: 500 nA @ 33 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: DO-204AL (DO-41)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 200°C (TJ)
| P6KE6.8CAH |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 600W 6.8V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS 600W 6.8V DO-15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
| MTZJ12SA R0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11.42V 500MW DO34
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11.42 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 11.42V 500MW DO34
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-34
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11.42 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
| RSFJL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2880 Stücke - Preis und Lieferfrist anzeigen
| RSFJL RVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2880 Stücke Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 500ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| RSFJL R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 1627 Stücke - Preis und Lieferfrist anzeigen
| RSFJL M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
| RSFJLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Package / Case: DO-219AB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 600V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
| RSFJLHRUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| RSFJLHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 500MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 500MA SUBSMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| TS25P04G C2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
| TS25P04G D2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
| TS25P04GHC2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 25A TS-6P
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
| TS25P04GHD2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 25A TS-6P
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BRIDGE RECT 1P 400V 25A TS-6P
Supplier Device Package: TS-6P
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Packaging: Tube
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
| SMAJ22CAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AC
Base Part Number: SMAJ22
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Voltage - Reverse Standoff (Typ): 22V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 1800 Stücke Description: TVS DIODE 22VWM 35.5VC DO214AC
Base Part Number: SMAJ22
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Clamping (Max) @ Ipp: 35.5V
Voltage - Breakdown (Min): 24.4V
Voltage - Reverse Standoff (Typ): 22V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Lieferzeit 21-28 Tag (e)
auf Bestellung 2435 Stücke - Preis und Lieferfrist anzeigen
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