Die Produkte taiwan semiconductor corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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TLD5S40AH |
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Taiwan Semiconductor Corporation |
Description: 3600W,10V-43V SURFACE MOUNT TRAN Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 40V Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Current - Peak Pulse (10/1000µs): 56A Power - Peak Pulse: 2800W (2.8kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-218AB Supplier Device Package: DO-218AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TLD5S43AH |
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Taiwan Semiconductor Corporation |
Description: 3600W,10V-43V SURFACE MOUNT TRAN Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 43V Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Current - Peak Pulse (10/1000µs): 52A Power - Peak Pulse: 2800W (2.8kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-218AB Supplier Device Package: DO-218AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHRQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL RUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Packaging: Tape & Reel (TR) Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHRUG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHRHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL MHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Packaging: Tape & Reel (TR) Capacitance @ Vr, F: 10pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHMHG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL MQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL MTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 1V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL RTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHMTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHRTG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DL RFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHRFG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES1DLHRVG |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SUB SMA Diode Type: Standard Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-219AB Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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5.0SMDJ54A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 54VWM 87.1VC DO214AB Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Current - Peak Pulse (10/1000µs): 57.5A Voltage - Clamping (Max) @ Ipp: 87.1V Voltage - Breakdown (Min): 60V Voltage - Reverse Standoff (Typ): 54V Unidirectional Channels: 1 Type: Zener Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: 5.0SMDJ54 |
auf Bestellung 2850 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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5.0SMDJ20A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 155A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: TVS DIODE 20VWM 32.4VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 155A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ24A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 24V 38.9V DO214AB Voltage - Breakdown (Min): 26.7V Voltage - Reverse Standoff (Typ): 24V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Current - Peak Pulse (10/1000µs): 129A Voltage - Clamping (Max) @ Ipp: 38.9V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: TVS DIODE 24V 38.9V DO214AB Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Voltage - Breakdown (Min): 26.7V Voltage - Reverse Standoff (Typ): 24V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Current - Peak Pulse (10/1000µs): 129A Voltage - Clamping (Max) @ Ipp: 38.9V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ28A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 28V 45.4V DO214AB Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Current - Peak Pulse (10/1000µs): 110A Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Voltage - Clamping (Max) @ Ipp: 45.4V Voltage - Breakdown (Min): 31.1V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: TVS DIODE 28V 45.4V DO214AB Voltage - Reverse Standoff (Typ): 28V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Power Line Protection: No Power - Peak Pulse: 5000W (5kW) Current - Peak Pulse (10/1000µs): 110A Voltage - Clamping (Max) @ Ipp: 45.4V Voltage - Breakdown (Min): 31.1V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ36A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 36V 58.1V DO214AB Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 36V Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Current - Peak Pulse (10/1000µs): 86.1A Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: TVS DIODE 36V 58.1V DO214AB Packaging: Cut Tape (CT) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 36V Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Current - Peak Pulse (10/1000µs): 86.1A Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ43A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 43V 69.4V DO214AB Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 43V Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Current - Peak Pulse (10/1000µs): 72.1A Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: TVS DIODE 43V 69.4V DO214AB Packaging: Cut Tape (CT) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 43V Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Current - Peak Pulse (10/1000µs): 72.1A Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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5.0SMDJ26A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 26V 42.1V DO214AB Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 26V Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Current - Peak Pulse (10/1000µs): 119A Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Taiwan Semiconductor Corporation |
Description: TVS DIODE 26V 42.1V DO214AB Packaging: Cut Tape (CT) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 26V Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Current - Peak Pulse (10/1000µs): 119A Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Applications: Telecom Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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ES2J R5G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AA Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Discontinued at Digi-Key Capacitance @ Vr, F: 20pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES2JA R3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Supplier Device Package: DO-214AC (SMA) Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA |
auf Bestellung 19800 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AC Part Status: Discontinued at Digi-Key Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Standard Current - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V |
auf Bestellung 21019 Stücke Lieferzeit 21-28 Tag (e) |
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ES2JAL M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 600V, SUPER FAST RECOV Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) |
auf Bestellung 3500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 600V, SUPER FAST RECOV Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 4020 Stücke Lieferzeit 21-28 Tag (e) |
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ES2JFS M3G | Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 600V, SUPER FAST RECOV Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
auf Bestellung 3500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: 35NS, 2A, 600V, SUPER FAST RECOV Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard |
auf Bestellung 6310 Stücke Lieferzeit 21-28 Tag (e) |
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ES2JA M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES2JAHM2G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES2JAHR3G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AC Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES2J M4G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES2JHM4G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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ES2JHR5G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO214AA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Diode Type: Standard Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TS78L05CT A3G |
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Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 100MA TO92 Voltage Dropout (Max): 1.7V @ 100mA (Typ) PSRR: 49dB (120Hz) Part Status: Obsolete Control Features: Current Limit Voltage - Output (Min/Fixed): 5V Supplier Device Package: TO-92 Number of Regulators: 1 Voltage - Input (Max): 35V Current - Quiescent (Iq): 6 mA Output Configuration: Positive Operating Temperature: 0°C ~ 150°C (TJ) Current - Output: 100mA Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| TS78L05CT B0G |
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Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 100MA TO92 Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-92 Voltage - Output (Min/Fixed): 5V Control Features: Current Limit Part Status: Obsolete PSRR: 49dB (120Hz) Voltage Dropout (Max): 1.7V @ 100mA (Typ) Protection Features: Over Current, Over Temperature |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||
| S8JCHV7G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Base Part Number: S8JCHV7 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation |
auf Bestellung 8500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Base Part Number: S8JCHV7 Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation |
auf Bestellung 8838 Stücke Lieferzeit 21-28 Tag (e) |
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S8JC V7G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Tape & Reel (TR) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: S8JC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 48pF @ 4V, 1MHz |
auf Bestellung 850 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Standard Recovery >500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation Base Part Number: S8JC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) |
auf Bestellung 1299 Stücke Lieferzeit 21-28 Tag (e) |
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S8JC R7G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Base Part Number: S8JC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Reverse Leakage @ Vr: 10µA @ 600V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A Current - Average Rectified (Io): 8A Voltage - DC Reverse (Vr) (Max): 600V Diode Type: Standard Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Taiwan Semiconductor Corporation |
auf Bestellung 110 Stücke Lieferzeit 21-28 Tag (e) |
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S8JC M6G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Manufacturer: Taiwan Semiconductor Corporation Packaging: Tape & Reel (TR) Part Status: Not For New Designs Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: S8JC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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S8JC V6G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Manufacturer: Taiwan Semiconductor Corporation Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: S8JC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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S8JCHM6G |
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Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 8A DO214AB Manufacturer: Taiwan Semiconductor Corporation Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Base Part Number: S8JC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TSM60NB099CZ C0G |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO220 Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Manufacturer: Taiwan Semiconductor Corporation Packaging: Tube Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2587pF @ 100V Power Dissipation (Max): 298W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Base Part Number: TSM60 |
auf Bestellung 615 Stücke Lieferzeit 21-28 Tag (e) |
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TSM60NB099PW C1G |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 |
auf Bestellung 99 Stücke Lieferzeit 21-28 Tag (e) |
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SMBJ64A M4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64V 103V DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64V Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 6.1A Power - Peak Pulse: 600W Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SMBJ64A R5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64V 103V DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64V Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 6.1A Power - Peak Pulse: 600W Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SMBJ64AHM4G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64V 103V DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64V Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 6.1A Power - Peak Pulse: 600W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SMBJ64AHR5G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 64V 103V DO214AA Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 64V Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Current - Peak Pulse (10/1000µs): 6.1A Power - Peak Pulse: 600W Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZX55C47 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 47V 500MW DO35 Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 35 V Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 110 Ohms Voltage - Zener (Nom) (Vz): 47 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBRF1090CTHC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 90V ITO220AB Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100µA @ 90V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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MBRF1090HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 90V 10A ITO220AC Packaging: Tube Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100µA @ 90V Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SRF1090 C0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 90V ITO220AB Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100µA @ 90V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SRF1090HC0G |
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Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 90V ITO220AB Packaging: Tube Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 100µA @ 90V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SR1204 A0G |
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Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 12A DO201AD Packaging: Tape & Box (TB) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 500µA @ 40V Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TSM110NB04DCR RLG |
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Taiwan Semiconductor Corporation |
Description: DUAL N-CHANNEL POWER MOSFET 40V, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Power - Max: 2W (Ta), 48W (Tc) FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TSM110NB04LDCR RLG |
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Taiwan Semiconductor Corporation |
Description: DUAL N-CHANNEL POWER MOSFET 40V, FET Type: 2 N-Channel (Dual) Power - Max: 2W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Drain to Source Voltage (Vdss): 40V |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: DUAL N-CHANNEL POWER MOSFET 40V, Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Power - Max: 2W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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.JPG "TSM110NB04CR RLG") |
TSM110NB04CR RLG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4900 Stücke Lieferzeit 21-28 Tag (e) |
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TSM110NB04LCR RLG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 12A/54A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 7000 Stücke Lieferzeit 21-28 Tag (e) |
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1.5SMC68A V6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1V 92V DO214AB Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 17A Voltage - Clamping (Max) @ Ipp: 92V Voltage - Breakdown (Min): 64.6V Voltage - Reverse Standoff (Typ): 58.1V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Power Line Protection: No |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC68A V7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1V 92V DO214AB Power - Peak Pulse: 1500W (1.5kW) Current - Peak Pulse (10/1000µs): 17A Voltage - Clamping (Max) @ Ipp: 92V Voltage - Breakdown (Min): 64.6V Voltage - Reverse Standoff (Typ): 58.1V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Power Line Protection: No |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC68A R7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1V 92V DO214AB Current - Peak Pulse (10/1000µs): 17A Voltage - Clamping (Max) @ Ipp: 92V Voltage - Breakdown (Min): 64.6V Voltage - Reverse Standoff (Typ): 58.1V Unidirectional Channels: 1 Type: Zener Part Status: Not For New Designs Packaging: Tape & Reel (TR) Supplier Device Package: DO-214AB (SMC) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC68AHR7G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1V 92V DO214AB Voltage - Clamping (Max) @ Ipp: 92V Voltage - Breakdown (Min): 64.6V Voltage - Reverse Standoff (Typ): 58.1V Unidirectional Channels: 1 Type: Zener Part Status: Active Packaging: Tape & Reel (TR) Current - Peak Pulse (10/1000µs): 17A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC68A M6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1V 92V DO214AB Packaging: Tape & Reel (TR) Part Status: Not For New Designs Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 58.1V Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Current - Peak Pulse (10/1000µs): 17A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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1.5SMC68AHM6G |
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Taiwan Semiconductor Corporation |
Description: TVS DIODE 58.1V 92V DO214AB Packaging: Tape & Reel (TR) Part Status: Active Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 58.1V Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 92V Current - Peak Pulse (10/1000µs): 17A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: Automotive Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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TQM033NB04CR RLG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A PDFN56U Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A PDFN56U Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4845 Stücke Lieferzeit 21-28 Tag (e) |
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TQM050NB06CR RLG |
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Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 16A/104A PDFN56U Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V |
auf Bestellung 4898 Stücke Lieferzeit 21-28 Tag (e) |
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MMSZ5262B RHG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 51V 500MW SOD123F Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 51V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 125 Ohms Current - Reverse Leakage @ Vr: 100nA @ 39V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15PHRHG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15PHMHG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15PHMQG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Current - Reverse Leakage @ Vr: 1 µA @ 11 V Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15PHMTG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15PHRTG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15PHRQG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 14.7 V Current - Reverse Leakage @ Vr: 1 µA @ 11 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.12% |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15P RQG |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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BZD27C15P M2G |
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Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14.7V 1W SUB SMA Packaging: Tape & Reel (TR) Part Status: Active Voltage - Zener (Nom) (Vz): 14.7V Tolerance: ±6.12% Power - Max: 1W Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 1µA @ 11V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| TLD5S40AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40V
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Current - Peak Pulse (10/1000µs): 56A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40V
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Current - Peak Pulse (10/1000µs): 56A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
| TLD5S43AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 52A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 52A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
| ES1DLHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DLHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DL RUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
| ES1DLHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| ES1DLHRUG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| ES1DL RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DLHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
| ES1DLHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
| ES1DL MQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DL MTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DL RTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DLHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DLHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
| ES1DLHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
| ES1DL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DLHRFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| ES1DLHRVG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| 5.0SMDJ54A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: 5.0SMDJ54
auf Bestellung 2850 Stücke Description: TVS DIODE 54VWM 87.1VC DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: 5.0SMDJ54
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ20A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ20A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ24A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 24V 38.9V DO214AB
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ24A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
auf Bestellung 6000 Stücke Description: TVS DIODE 24V 38.9V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
Lieferzeit 21-28 Tag (e)
| 5.0SMDJ28A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ28A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
auf Bestellung 6000 Stücke Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Lieferzeit 21-28 Tag (e)
| 5.0SMDJ36A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 36V 58.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ36A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Lieferzeit 21-28 Tag (e)
| 5.0SMDJ43A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 43V 69.4V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ43A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Lieferzeit 21-28 Tag (e)
| 5.0SMDJ26A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 26V 42.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| 5.0SMDJ26A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 3000 Stücke Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Lieferzeit 21-28 Tag (e)
| ES2J R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
| ES2JA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Supplier Device Package: DO-214AC (SMA)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 19800 Stücke Description: DIODE GEN PURP 600V 2A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Supplier Device Package: DO-214AC (SMA)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Lieferzeit 21-28 Tag (e)
auf Bestellung 21019 Stücke - Preis und Lieferfrist anzeigen
|
| ES2JA R3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 21019 Stücke Description: DIODE GEN PURP 600V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 19800 Stücke - Preis und Lieferfrist anzeigen
|
| ES2JAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke Description: 35NS, 2A, 600V, SUPER FAST RECOV
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 4020 Stücke - Preis und Lieferfrist anzeigen
| ES2JAL M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4020 Stücke Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
| ES2JFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6310 Stücke - Preis und Lieferfrist anzeigen
| ES2JFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 6310 Stücke Description: 35NS, 2A, 600V, SUPER FAST RECOV
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
| ES2JA M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| ES2JAHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| ES2JAHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| ES2J M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| ES2JHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
| ES2JHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
| TS78L05CT A3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
PSRR: 49dB (120Hz)
Part Status: Obsolete
Control Features: Current Limit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-92
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG LINEAR 5V 100MA TO92
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
PSRR: 49dB (120Hz)
Part Status: Obsolete
Control Features: Current Limit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-92
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Protection Features: Over Current, Over Temperature
| TS78L05CT B0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
| S8JCHV7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 8500 Stücke Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Lieferzeit 21-28 Tag (e)
auf Bestellung 8838 Stücke - Preis und Lieferfrist anzeigen
| S8JCHV7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 8838 Stücke Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Lieferzeit 21-28 Tag (e)
auf Bestellung 8500 Stücke - Preis und Lieferfrist anzeigen
| S8JC V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
auf Bestellung 850 Stücke Description: DIODE GEN PURP 600V 8A DO214AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Lieferzeit 21-28 Tag (e)
auf Bestellung 1299 Stücke - Preis und Lieferfrist anzeigen
| S8JC V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 1299 Stücke Description: DIODE GEN PURP 600V 8A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Lieferzeit 21-28 Tag (e)
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
| S8JC R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 110 Stücke Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Lieferzeit 21-28 Tag (e)
| S8JC M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
| S8JC V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
| S8JCHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
| TSM60NB099CZ C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO220
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2587pF @ 100V
Power Dissipation (Max): 298W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Part Number: TSM60
auf Bestellung 615 Stücke Description: MOSFET N-CHANNEL 600V 38A TO220
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2587pF @ 100V
Power Dissipation (Max): 298W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Part Number: TSM60
Lieferzeit 21-28 Tag (e)
| TSM60NB099PW C1G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
auf Bestellung 99 Stücke Description: MOSFET N-CHANNEL 600V 38A TO247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Lieferzeit 21-28 Tag (e)
| SMBJ64A M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| SMBJ64A R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| SMBJ64AHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| SMBJ64AHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
| BZX55C47 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 47V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
| MBRF1090CTHC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
| MBRF1090HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 90V 10A ITO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
| SRF1090 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
| SRF1090HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
| SR1204 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
| TSM110NB04DCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL N-CHANNEL POWER MOSFET 40V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Power - Max: 2W (Ta), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DUAL N-CHANNEL POWER MOSFET 40V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Power - Max: 2W (Ta), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
| TSM110NB04LDCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL N-CHANNEL POWER MOSFET 40V,
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
auf Bestellung 2500 Stücke Description: DUAL N-CHANNEL POWER MOSFET 40V,
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| TSM110NB04LDCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL N-CHANNEL POWER MOSFET 40V,
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke Description: DUAL N-CHANNEL POWER MOSFET 40V,
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| TSM110NB04CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke Description: MOSFET N-CH 40V 12A/54A 8PDFN
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4900 Stücke - Preis und Lieferfrist anzeigen
| TSM110NB04CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4900 Stücke Description: MOSFET N-CH 40V 12A/54A 8PDFN
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| TSM110NB04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 5000 Stücke Description: MOSFET N-CH 40V 12A/54A 8PDFN
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
| TSM110NB04LCR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7000 Stücke Description: MOSFET N-CH 40V 12A/54A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| 1.5SMC68A V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
| 1.5SMC68A V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
| 1.5SMC68A R7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1V 92V DO214AB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
| 1.5SMC68AHR7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1V 92V DO214AB
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
| 1.5SMC68A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
| 1.5SMC68AHM6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
| TQM033NB04CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
auf Bestellung 2500 Stücke Description: MOSFET N-CH 40V 21A/121A PDFN56U
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 4845 Stücke - Preis und Lieferfrist anzeigen
|
| TQM033NB04CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4845 Stücke Description: MOSFET N-CH 40V 21A/121A PDFN56U
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
|
| TQM050NB06CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
auf Bestellung 2500 Stücke Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 4898 Stücke - Preis und Lieferfrist anzeigen
|
| TQM050NB06CR RLG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
auf Bestellung 4898 Stücke Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
|
| MMSZ5262B RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW SOD123F
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 39V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 51V 500MW SOD123F
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 39V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
| BZD27C15PHRHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
| BZD27C15PHMHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| BZD27C15PHMQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| BZD27C15PHMTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
| BZD27C15PHRTG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
| BZD27C15PHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
| BZD27C15P RQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
| BZD27C15P M2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
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