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TLD5S40AH TLD5S40AH TLD5S10AH SERIES_C1906.pdf Taiwan Semiconductor Corporation Description: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40V
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Current - Peak Pulse (10/1000µs): 56A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TLD5S43AH TLD5S43AH TLD5S10AH SERIES_C1906.pdf Taiwan Semiconductor Corporation Description: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 52A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHM2G ES1DLHM2G ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRQG ES1DLHRQG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RUG ES1DL RUG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHR3G ES1DLHR3G ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRUG ES1DLHRUG ES1AL%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RHG ES1DL RHG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRHG ES1DLHRHG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL MHG ES1DL MHG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHMHG ES1DLHMHG ES1AL%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL MQG ES1DL MQG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL MTG ES1DL MTG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RTG ES1DL RTG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHMQG ES1DLHMQG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHMTG ES1DLHMTG ES1AL%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRTG ES1DLHRTG ES1AL%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RFG ES1DL RFG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRFG ES1DLHRFG ES1AL%20SERIES_L2103.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRVG ES1DLHRVG ES1AL%20SERIES_K15.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
5.0SMDJ54A M6G 5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 54VWM 87.1VC DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: 5.0SMDJ54
auf Bestellung 2850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ20A M6G 5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ24A M6G 5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 24V 38.9V DO214AB
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: TVS DIODE 24V 38.9V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ28A M6G 5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ36A M6G 5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ43A M6G 5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ26A M6G 5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Taiwan Semiconductor Corporation Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
ES2J R5G ES2J R5G ES2A%20SERIES_L2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JA R3G ES2JA R3G ES2AA%20SERIES_M2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Supplier Device Package: DO-214AC (SMA)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 19800 Stücke
Lieferzeit 21-28 Tag (e)
1800+ 0.8 EUR
3600+ 0.72 EUR
5400+ 0.68 EUR
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 21019 Stücke
Lieferzeit 21-28 Tag (e)
14+ 1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
ES2JAL M3G ES2JAL M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4020 Stücke
Lieferzeit 21-28 Tag (e)
ES2JFS M3G ES2JFS M3G Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: 35NS, 2A, 600V, SUPER FAST RECOV
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 6310 Stücke
Lieferzeit 21-28 Tag (e)
ES2JA M2G ES2JA M2G ES2AA%20SERIES_M2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JAHM2G ES2JAHM2G ES2AA%20SERIES_M2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JAHR3G ES2JAHR3G ES2AA%20SERIES_M2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2J M4G ES2J M4G ES2A%20SERIES_L2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JHM4G ES2JHM4G ES2A%20SERIES_L2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JHR5G ES2JHR5G ES2A%20SERIES_L2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS78L05CT A3G TS78L05CT A3G TS78L00_L2001.pdf Taiwan Semiconductor Corporation Description: IC REG LINEAR 5V 100MA TO92
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
PSRR: 49dB (120Hz)
Part Status: Obsolete
Control Features: Current Limit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-92
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS78L05CT B0G TS78L00_L2001.pdf Taiwan Semiconductor Corporation Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S8JCHV7G S8GC%20SERIES_F2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 8500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 8838 Stücke
Lieferzeit 21-28 Tag (e)
S8JC V7G S8JC V7G S8GC%20SERIES_F2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
auf Bestellung 850 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 1299 Stücke
Lieferzeit 21-28 Tag (e)
S8JC R7G S8JC R7G S8GC%20SERIES_F2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 110 Stücke
Lieferzeit 21-28 Tag (e)
S8JC M6G S8JC M6G S8GC%20SERIES_F2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S8JC V6G S8JC V6G S8GC%20SERIES_F2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S8JCHM6G S8JCHM6G S8GC%20SERIES_F2102.pdf Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM60NB099CZ C0G TSM60NB099CZ C0G TSM60NB099CZ_A1705.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 38A TO220
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2587pF @ 100V
Power Dissipation (Max): 298W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Part Number: TSM60
auf Bestellung 615 Stücke
Lieferzeit 21-28 Tag (e)
TSM60NB099PW C1G TSM60NB099PW C1G TSM60NB099PW_A1705.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 600V 38A TO247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
SMBJ64A M4G SMBJ64A M4G SMBJ SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ64A R5G SMBJ64A R5G SMBJ SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ64AHM4G SMBJ64AHM4G SMBJ SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ64AHR5G SMBJ64AHR5G SMBJ SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55C47 A0G BZX55C47 A0G BZX55C2V0%20SERIES_D1610.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 47V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1090CTHC0G MBRF1090CTHC0G MBRF1035CT%20SERIES_L13.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1090HC0G MBRF1090HC0G MBRF1035%20SERIES_L1512.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 90V 10A ITO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SRF1090 C0G SRF1090 C0G SRF1020%20SERIES_K1706.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SRF1090HC0G SRF1090HC0G SRF1020%20SERIES_K1706.pdf Taiwan Semiconductor Corporation Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR1204 A0G SR1204 A0G SR1202%20SERIES_F13.pdf Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM110NB04DCR RLG TSM110NB04DCR RLG TSM110NB04DCR_A1908.pdf Taiwan Semiconductor Corporation Description: DUAL N-CHANNEL POWER MOSFET 40V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Power - Max: 2W (Ta), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM110NB04LDCR RLG TSM110NB04LDCR RLG TSM110NB04LDCR_A2001.pdf Taiwan Semiconductor Corporation Description: DUAL N-CHANNEL POWER MOSFET 40V,
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: DUAL N-CHANNEL POWER MOSFET 40V,
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
TSM110NB04CR RLG TSM110NB04CR RLG TSM110NB04CR_B1804.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 12A/54A 8PDFN
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 12A/54A 8PDFN
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4900 Stücke
Lieferzeit 21-28 Tag (e)
TSM110NB04LCR RLG TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 12A/54A 8PDFN
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 12A/54A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
1.5SMC68A V6G 1.5SMC68A V6G 1.5SMC SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68A V7G 1.5SMC68A V7G 1.5SMC SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68A R7G 1.5SMC68A R7G 1.5SMC SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 58.1V 92V DO214AB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68AHR7G 1.5SMC68AHR7G 1.5SMC SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 58.1V 92V DO214AB
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68A M6G 1.5SMC68A M6G 1.5SMC SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68AHM6G 1.5SMC68AHM6G 1.5SMC SERIES_Q2004.pdf Taiwan Semiconductor Corporation Description: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TQM033NB04CR RLG TQM033NB04CR RLG TQM033NB04CR_A2003.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 21A/121A PDFN56U
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 6.2 EUR
Taiwan Semiconductor Corporation Description: MOSFET N-CH 40V 21A/121A PDFN56U
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4845 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.06 EUR
10+ 10.82 EUR
100+ 8.87 EUR
500+ 7.55 EUR
1000+ 6.37 EUR
TQM050NB06CR RLG TQM050NB06CR RLG TQM050NB06CR_A2003.pdf Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
2500+ 7.65 EUR
Taiwan Semiconductor Corporation Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
auf Bestellung 4898 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.87 EUR
10+ 13.36 EUR
100+ 10.94 EUR
500+ 9.32 EUR
1000+ 7.86 EUR
MMSZ5262B RHG MMSZ5262B RHG MMSZ5221B%20series_F1804.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 51V 500MW SOD123F
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 39V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHRHG BZD27C15PHRHG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHMHG BZD27C15PHMHG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHMQG BZD27C15PHMQG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHMTG BZD27C15PHMTG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHRTG BZD27C15PHRTG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHRQG BZD27C15PHRQG BZD27C%20SERIES_AB2103.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15P RQG BZD27C15P RQG BZD27C%20SERIES_AA1806.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15P M2G BZD27C15P M2G BZD27C%20SERIES_AA1806.pdf Taiwan Semiconductor Corporation Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TLD5S40AH TLD5S10AH SERIES_C1906.pdf
TLD5S40AH
Hersteller: Taiwan Semiconductor Corporation
Description: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40V
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Current - Peak Pulse (10/1000µs): 56A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TLD5S43AH TLD5S10AH SERIES_C1906.pdf
TLD5S43AH
Hersteller: Taiwan Semiconductor Corporation
Description: 3600W,10V-43V SURFACE MOUNT TRAN
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 52A
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHM2G ES1AL%20SERIES_L2103.pdf
ES1DLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRQG ES1AL%20SERIES_L2103.pdf
ES1DLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RUG ES1AL%20SERIES_L2103.pdf
ES1DL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Packaging: Tape & Reel (TR)
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHR3G ES1AL%20SERIES_L2103.pdf
ES1DLHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRUG ES1AL%20SERIES_K15.pdf
ES1DLHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RHG ES1AL%20SERIES_L2103.pdf
ES1DL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRHG ES1AL%20SERIES_L2103.pdf
ES1DLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL MHG ES1AL%20SERIES_L2103.pdf
ES1DL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Packaging: Tape & Reel (TR)
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHMHG ES1AL%20SERIES_K15.pdf
ES1DLHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL MQG ES1AL%20SERIES_L2103.pdf
ES1DL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL MTG ES1AL%20SERIES_L2103.pdf
ES1DL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RTG ES1AL%20SERIES_L2103.pdf
ES1DL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHMQG ES1AL%20SERIES_L2103.pdf
ES1DLHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHMTG ES1AL%20SERIES_K15.pdf
ES1DLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRTG ES1AL%20SERIES_K15.pdf
ES1DLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DL RFG ES1AL%20SERIES_L2103.pdf
ES1DL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRFG ES1AL%20SERIES_L2103.pdf
ES1DLHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES1DLHRVG ES1AL%20SERIES_K15.pdf
ES1DLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SUB SMA
Diode Type: Standard
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
5.0SMDJ54A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ54A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 54VWM 87.1VC DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Clamping (Max) @ Ipp: 87.1V
Voltage - Breakdown (Min): 60V
Voltage - Reverse Standoff (Typ): 54V
Unidirectional Channels: 1
Type: Zener
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: 5.0SMDJ54
auf Bestellung 2850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ20A M6G 5.0SMDJ%20SERIES_D2102.pdf
5.0SMDJ20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 155A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ24A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ24A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 24V 38.9V DO214AB
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Clamping (Max) @ Ipp: 38.9V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ28A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ28A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Voltage - Clamping (Max) @ Ipp: 45.4V
Voltage - Breakdown (Min): 31.1V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ36A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ36A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 36V
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Current - Peak Pulse (10/1000µs): 86.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ43A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ43A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43V 69.4V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 43V
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Current - Peak Pulse (10/1000µs): 72.1A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
5.0SMDJ26A M6G 5.0SMDJ%20SERIES_B1708.pdf
5.0SMDJ26A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 26V 42.1V DO214AB
Packaging: Cut Tape (CT)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 26V
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Current - Peak Pulse (10/1000µs): 119A
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: Telecom
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
ES2J R5G ES2A%20SERIES_L2102.pdf
ES2J R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JA R3G ES2AA%20SERIES_M2102.pdf
ES2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Supplier Device Package: DO-214AC (SMA)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
auf Bestellung 19800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21019 Stücke - Preis und Lieferfrist anzeigen
1800+ 0.8 EUR
3600+ 0.72 EUR
5400+ 0.68 EUR
ES2JA R3G ES2AA%20SERIES_M2102.pdf
ES2JA R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
auf Bestellung 21019 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19800 Stücke - Preis und Lieferfrist anzeigen
14+ 1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
ES2JAL M3G
ES2JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4020 Stücke - Preis und Lieferfrist anzeigen
ES2JAL M3G
ES2JAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4020 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
ES2JFS M3G
ES2JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
auf Bestellung 3500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6310 Stücke - Preis und Lieferfrist anzeigen
ES2JFS M3G
ES2JFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 35NS, 2A, 600V, SUPER FAST RECOV
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 6310 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3500 Stücke - Preis und Lieferfrist anzeigen
ES2JA M2G ES2AA%20SERIES_M2102.pdf
ES2JA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JAHM2G ES2AA%20SERIES_M2102.pdf
ES2JAHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JAHR3G ES2AA%20SERIES_M2102.pdf
ES2JAHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2J M4G ES2A%20SERIES_L2102.pdf
ES2J M4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JHM4G ES2A%20SERIES_L2102.pdf
ES2JHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
ES2JHR5G ES2A%20SERIES_L2102.pdf
ES2JHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS78L05CT A3G TS78L00_L2001.pdf
TS78L05CT A3G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
PSRR: 49dB (120Hz)
Part Status: Obsolete
Control Features: Current Limit
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-92
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 150°C (TJ)
Current - Output: 100mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TS78L05CT B0G TS78L00_L2001.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S8JCHV7G S8GC%20SERIES_F2102.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 8500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8838 Stücke - Preis und Lieferfrist anzeigen
S8JCHV7G S8GC%20SERIES_F2102.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JCHV7
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 0.985V @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 8838 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8500 Stücke - Preis und Lieferfrist anzeigen
S8JC V7G S8GC%20SERIES_F2102.pdf
S8JC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
auf Bestellung 850 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1299 Stücke - Preis und Lieferfrist anzeigen
S8JC V7G S8GC%20SERIES_F2102.pdf
S8JC V7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
auf Bestellung 1299 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
S8JC R7G S8GC%20SERIES_F2102.pdf
S8JC R7G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Base Part Number: S8JC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Taiwan Semiconductor Corporation
auf Bestellung 110 Stücke
Lieferzeit 21-28 Tag (e)
S8JC M6G S8GC%20SERIES_F2102.pdf
S8JC M6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S8JC V6G S8GC%20SERIES_F2102.pdf
S8JC V6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
S8JCHM6G S8GC%20SERIES_F2102.pdf
S8JCHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 985mV @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: S8JC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM60NB099CZ C0G TSM60NB099CZ_A1705.pdf
TSM60NB099CZ C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO220
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Taiwan Semiconductor Corporation
Packaging: Tube
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2587pF @ 100V
Power Dissipation (Max): 298W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Part Number: TSM60
auf Bestellung 615 Stücke
Lieferzeit 21-28 Tag (e)
TSM60NB099PW C1G TSM60NB099PW_A1705.pdf
TSM60NB099PW C1G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
SMBJ64A M4G SMBJ SERIES_Q2004.pdf
SMBJ64A M4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ64A R5G SMBJ SERIES_Q2004.pdf
SMBJ64A R5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ64AHM4G SMBJ SERIES_Q2004.pdf
SMBJ64AHM4G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBJ64AHR5G SMBJ SERIES_Q2004.pdf
SMBJ64AHR5G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO214AA
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 64V
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Current - Peak Pulse (10/1000µs): 6.1A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZX55C47 A0G BZX55C2V0%20SERIES_D1610.pdf
BZX55C47 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 47V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 35 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 110 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1090CTHC0G MBRF1035CT%20SERIES_L13.pdf
MBRF1090CTHC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MBRF1090HC0G MBRF1035%20SERIES_L1512.pdf
MBRF1090HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
Packaging: Tube
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SRF1090 C0G SRF1020%20SERIES_K1706.pdf
SRF1090 C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SRF1090HC0G SRF1020%20SERIES_K1706.pdf
SRF1090HC0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
Packaging: Tube
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 90V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SR1204 A0G SR1202%20SERIES_F13.pdf
SR1204 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 12A DO201AD
Packaging: Tape & Box (TB)
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 500µA @ 40V
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM110NB04DCR RLG TSM110NB04DCR_A1908.pdf
TSM110NB04DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL N-CHANNEL POWER MOSFET 40V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Power - Max: 2W (Ta), 48W (Tc)
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TSM110NB04LDCR RLG TSM110NB04LDCR_A2001.pdf
TSM110NB04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL N-CHANNEL POWER MOSFET 40V,
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
TSM110NB04LDCR RLG TSM110NB04LDCR_A2001.pdf
TSM110NB04LDCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: DUAL N-CHANNEL POWER MOSFET 40V,
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
TSM110NB04CR RLG TSM110NB04CR_B1804.pdf
TSM110NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4900 Stücke - Preis und Lieferfrist anzeigen
TSM110NB04CR RLG TSM110NB04CR_B1804.pdf
TSM110NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1443 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
TSM110NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7000 Stücke - Preis und Lieferfrist anzeigen
TSM110NB04LCR RLG TSM110NB04LCR_B1804.pdf
TSM110NB04LCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 12A/54A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1269 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7000 Stücke
Lieferzeit 21-28 Tag (e)
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1.5SMC68A V6G 1.5SMC SERIES_Q2004.pdf
1.5SMC68A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68A V7G 1.5SMC SERIES_Q2004.pdf
1.5SMC68A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Power Line Protection: No
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68A R7G 1.5SMC SERIES_Q2004.pdf
1.5SMC68A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Current - Peak Pulse (10/1000µs): 17A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Not For New Designs
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-214AB (SMC)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68AHR7G 1.5SMC SERIES_Q2004.pdf
1.5SMC68AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68A M6G 1.5SMC SERIES_Q2004.pdf
1.5SMC68A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Not For New Designs
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1.5SMC68AHM6G 1.5SMC SERIES_Q2004.pdf
1.5SMC68AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1V 92V DO214AB
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58.1V
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Current - Peak Pulse (10/1000µs): 17A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TQM033NB04CR RLG TQM033NB04CR_A2003.pdf
TQM033NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4845 Stücke - Preis und Lieferfrist anzeigen
2500+ 6.2 EUR
TQM033NB04CR RLG TQM033NB04CR_A2003.pdf
TQM033NB04CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A PDFN56U
Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4845 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
3+ 12.06 EUR
10+ 10.82 EUR
100+ 8.87 EUR
500+ 7.55 EUR
1000+ 6.37 EUR
TQM050NB06CR RLG TQM050NB06CR_A2003.pdf
TQM050NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4898 Stücke - Preis und Lieferfrist anzeigen
2500+ 7.65 EUR
TQM050NB06CR RLG TQM050NB06CR_A2003.pdf
TQM050NB06CR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 16A/104A PDFN56U
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6904 pF @ 30 V
auf Bestellung 4898 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
2+ 14.87 EUR
10+ 13.36 EUR
100+ 10.94 EUR
500+ 9.32 EUR
1000+ 7.86 EUR
MMSZ5262B RHG MMSZ5221B%20series_F1804.pdf
MMSZ5262B RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW SOD123F
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 39V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHMTG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C15PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 14.7 V
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.12%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15P RQG BZD27C%20SERIES_AA1806.pdf
BZD27C15P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BZD27C15P M2G BZD27C%20SERIES_AA1806.pdf
BZD27C15P M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14.7V 1W SUB SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 14.7V
Tolerance: ±6.12%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 11V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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