Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25590) > Seite 378 nach 427
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SMBJ28C | Taiwan Semiconductor Corporation |
 Description: 600W, 34.6V, 10%, BIDIRECTIONAL,Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.6A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 600W Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMCJ28CH | Taiwan Semiconductor Corporation |
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMCJ28C | Taiwan Semiconductor Corporation |
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 50V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TSM60NC620CH C5G | Taiwan Semiconductor Corporation |
Description: 600V, 7A, SINGLE N-CHANNEL POWER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NC620CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 7A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NC620CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 7A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE285CH C5G | Taiwan Semiconductor Corporation |
Description: MOSFET Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V |
auf Bestellung 3726 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE285CIT C0G | Taiwan Semiconductor Corporation |
Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE200CIT C0G | Taiwan Semiconductor Corporation |
Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.65mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE180CIT C0G | Taiwan Semiconductor Corporation |
Description: 600V, 13A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.8mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE084CIT C0G | Taiwan Semiconductor Corporation |
Description: 600V, 21A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE084PW C0G | Taiwan Semiconductor Corporation |
Description: 600V, 42A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE069CIT C0G | Taiwan Semiconductor Corporation |
Description: 600V, 24A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 6V @ 3.5mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE069PW C0G | Taiwan Semiconductor Corporation |
Description: 600V, 51A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 6V @ 3.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM60NE048PW C0G | Taiwan Semiconductor Corporation |
Description: MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 6V @ 4.6mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NC165CI | Taiwan Semiconductor Corporation |
Description: 600V, 24A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ITO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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UG54GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO201AD Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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UG54GH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO201AD Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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TSP3H150S | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TSP3H150S | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A TO277A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 150pF @ 4V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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MBR2035CT-Y | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2035CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBR2035CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 35 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UG1005G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 300V 10A TO220AB Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 22 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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UG1005GH | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 300V 10A TO220AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Voltage - DC Reverse (Vr) (Max): 300 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 22 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRS2050CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 50V 20A TO263AB Current - Reverse Leakage @ Vr: 100 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS2035CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 35V 20A TO263AB Voltage - DC Reverse (Vr) (Max): 35 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 35 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS2090CT | Taiwan Semiconductor Corporation |
Description: 20A, 90V, PLANAR SCHOTTKY Current - Reverse Leakage @ Vr: 100 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 90 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS20H200CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOT 200V 20A TO263AB Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BZX585B18 | Taiwan Semiconductor Corporation |
Description: SOD-523F, 200MW, 2%, ZENER DIODE Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V Power - Max: 200 mW Supplier Device Package: SOD-523F Impedance (Max) (Zzt): 45 Ohms Voltage - Zener (Nom) (Vz): 18 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Tolerance: ±2% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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M3Z3V9C RRG | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 5%, ZENER DIODE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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M3Z3V9C RRG | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 5%, ZENER DIODE Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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M3Z3V9C | Taiwan Semiconductor Corporation |
Description: SOD-323F, 200MW, 5%, ZENER DIODE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.9 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-323F Power - Max: 200 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMSZ4678 RHG | Taiwan Semiconductor Corporation |
Description: SOD-123, 500MW, 5%, SMALL SIGNAL Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V Power - Max: 500 mW Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 1.8 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMSZ4678 RHG | Taiwan Semiconductor Corporation |
Description: SOD-123, 500MW, 5%, SMALL SIGNAL Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V Power - Max: 500 mW Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 1.8 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 2965 Stücke: Lieferzeit 10-14 Tag (e) |
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BZD27C8V2PHRQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Tolerance: ±6.09% Packaging: Tape & Reel (TR) Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 2 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZD27C8V2PHM2G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 8.2V 1W SUB SMA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Automotive Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 2 Ohms Voltage - Zener (Nom) (Vz): 8.2 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.09% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRF5200H | Taiwan Semiconductor Corporation |
Description: 5A, 200V, PLANAR SCHOTTKY Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S5AH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 50V 5A DO214AB Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS5AH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 50V 5A DO214AB Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Voltage - DC Reverse (Vr) (Max): 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS2AH | Taiwan Semiconductor Corporation |
Description: 150NS, 2A, 50V, FAST RECOVERY RE Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 50pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS2AH | Taiwan Semiconductor Corporation |
Description: 50NS, 2A, 50V, HIGH EFFICIENT RE Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 50pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S2AH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 2A DO214AA Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZT52B5V6 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 500MW SOD123F Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 2 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52B5V6 RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 500MW SOD123F Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 900 nA @ 2 V |
auf Bestellung 4613 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52B5V6-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 410MW SOD123 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52B5V6-G RHG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 410MW SOD123 Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
auf Bestellung 5708 Stücke: Lieferzeit 10-14 Tag (e) |
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BZT52B5V6-G | Taiwan Semiconductor Corporation |
Description: SOD-123, 410MW, 2%, SMALL SIGNAL Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-123 Power - Max: 410 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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S2GAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 400V, STANDARD RECOVERY RE Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2GAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 400V, STANDARD RECOVERY RE Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 400 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2DAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 200V, STANDARD RECOVERY RE Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2DAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 200V, STANDARD RECOVERY RE Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2BAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 100V, STANDARD RECOVERY RE Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2BAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 100V, STANDARD RECOVERY RE Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2KAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 800V, STANDARD RECOVERY RE Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Technology: Standard Reverse Recovery Time (trr): 1.5 µs Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Package / Case: DO-214AC, SMA |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2KAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 800V, STANDARD RECOVERY RE Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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S2JAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 600V, STANDARD RECOVERY RE Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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S2JAH | Taiwan Semiconductor Corporation |
Description: 1.5A, 600V, STANDARD RECOVERY RE Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.5 µs |
auf Bestellung 14975 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2JAH | Taiwan Semiconductor Corporation |
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT Voltage - DC Reverse (Vr) (Max): 600 V Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2JAH | Taiwan Semiconductor Corporation |
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 30pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMBJ28C |
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Hersteller: Taiwan Semiconductor Corporation
Description: 600W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ28CH |
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Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ28C |
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Hersteller: Taiwan Semiconductor Corporation
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM60NC620CH C5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 10+ | 2.5 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.43 EUR |
| 2000+ | 1.36 EUR |
| 5000+ | 1.31 EUR |
| TSM60NC620CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.32 EUR |
| 5000+ | 1.26 EUR |
| TSM60NC620CP ROG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.52 EUR |
| 10+ | 2.9 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.46 EUR |
| TSM60NE285CH C5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
auf Bestellung 3726 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.68 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.32 EUR |
| TSM60NE285CIT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 10+ | 5.28 EUR |
| 100+ | 3.71 EUR |
| 500+ | 3.05 EUR |
| 1000+ | 2.83 EUR |
| 2000+ | 2.65 EUR |
| TSM60NE200CIT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.28 EUR |
| 10+ | 4.83 EUR |
| 100+ | 3.44 EUR |
| 500+ | 3.11 EUR |
| TSM60NE180CIT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 13A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V
Description: 600V, 13A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.16 EUR |
| 10+ | 5.44 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.59 EUR |
| TSM60NE084CIT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 21A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V
Description: 600V, 21A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.27 EUR |
| 10+ | 12.53 EUR |
| 100+ | 9.29 EUR |
| 500+ | 8.26 EUR |
| TSM60NE084PW C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
Description: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.89 EUR |
| 10+ | 14.47 EUR |
| 300+ | 11.35 EUR |
| TSM60NE069CIT C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
Description: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.43 EUR |
| 10+ | 15.8 EUR |
| 100+ | 13.17 EUR |
| 500+ | 11.61 EUR |
| 1000+ | 10.46 EUR |
| TSM60NE069PW C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
Description: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.46 EUR |
| 10+ | 15.58 EUR |
| 50+ | 12.63 EUR |
| TSM60NE048PW C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.87 EUR |
| 10+ | 21.03 EUR |
| 300+ | 17.61 EUR |
| TSM60NC165CI |
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| UG54GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1250+ | 0.39 EUR |
| UG54GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 24+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| TSP3H150S |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| TSP3H150S |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A TO277A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 150V 3A TO277A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.52 EUR |
| MBR2035CT-Y |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR2035CT |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| MBR2035CTH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| UG1005G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 300V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 50+ | 1.31 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.71 EUR |
| UG1005GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 300V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 50+ | 1.31 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.71 EUR |
| MBRS2050CT |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 50V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBRS2035CT |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO263AB
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Description: DIODE ARR SCHOTT 35V 20A TO263AB
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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Stück im Wert von UAH
| MBRS2090CT |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 20A, 90V, PLANAR SCHOTTKY
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: 20A, 90V, PLANAR SCHOTTKY
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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Stück im Wert von UAH
| MBRS20H200CT |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOT 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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Stück im Wert von UAH
| BZX585B18 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-523F, 200MW, 2%, ZENER DIODE
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: SOD-523F, 200MW, 2%, ZENER DIODE
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| M3Z3V9C RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.064 EUR |
| M3Z3V9C RRG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 81+ | 0.26 EUR |
| 166+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.074 EUR |
| M3Z3V9C |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ4678 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ4678 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 81+ | 0.26 EUR |
| 166+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.074 EUR |
| BZD27C8V2PHRQG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZD27C8V2PHM2G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRF5200H |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 200V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: 5A, 200V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S5AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS5AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 5A DO214AB
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Description: DIODE STANDARD 50V 5A DO214AB
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS2AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 50V, FAST RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: 150NS, 2A, 50V, FAST RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS2AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 50V, HIGH EFFICIENT RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: 50NS, 2A, 50V, HIGH EFFICIENT RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S2AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE GEN PURP 50V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZT52B5V6 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.08 EUR |
| BZT52B5V6 RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
auf Bestellung 4613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 87+ | 0.24 EUR |
| 121+ | 0.18 EUR |
| 140+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| BZT52B5V6-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.084 EUR |
| BZT52B5V6-G RHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
auf Bestellung 5708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 83+ | 0.25 EUR |
| 133+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| BZT52B5V6-G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S2GAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 400V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: 1.5A, 400V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.11 EUR |
| 15000+ | 0.099 EUR |
| S2GAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 400V, STANDARD RECOVERY RE
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: 1.5A, 400V, STANDARD RECOVERY RE
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| S2DAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 200V, STANDARD RECOVERY RE
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Description: 1.5A, 200V, STANDARD RECOVERY RE
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.11 EUR |
| 15000+ | 0.099 EUR |
| S2DAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 200V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Qualification: AEC-Q101
Description: 1.5A, 200V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| S2BAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 100V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: 1.5A, 100V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.11 EUR |
| 15000+ | 0.099 EUR |
| S2BAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 100V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Description: 1.5A, 100V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| S2KAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 800V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Package / Case: DO-214AC, SMA
Description: 1.5A, 800V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Package / Case: DO-214AC, SMA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.11 EUR |
| 15000+ | 0.099 EUR |
| S2KAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 800V, STANDARD RECOVERY RE
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: 1.5A, 800V, STANDARD RECOVERY RE
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| S2JAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 600V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: 1.5A, 600V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.11 EUR |
| S2JAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 600V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Description: 1.5A, 600V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
auf Bestellung 14975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| HS2JAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Voltage - DC Reverse (Vr) (Max): 600 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Voltage - DC Reverse (Vr) (Max): 600 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| HS2JAH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.17 EUR |