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TSM60NE084PW C0G TSM60NE084PW C0G Taiwan Semiconductor Corporation TSM60NE084PW_A2403.pdf Description: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
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TSM60NE069CIT C0G TSM60NE069CIT C0G Taiwan Semiconductor Corporation TSM60NE069CIT_A2403.pdf Description: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
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TSM60NE069PW C0G TSM60NE069PW C0G Taiwan Semiconductor Corporation TSM60NE069PW_A2403.pdf Description: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
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TSM60NE048PW C0G TSM60NE048PW C0G Taiwan Semiconductor Corporation Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
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TSM60NC165CI Taiwan Semiconductor Corporation Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
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UG54GH UG54GH Taiwan Semiconductor Corporation UG54G SERIES_F2111.pdf Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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UG54GH UG54GH Taiwan Semiconductor Corporation UG54G SERIES_F2111.pdf Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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TSP3H150S TSP3H150S Taiwan Semiconductor Corporation TSP3H150S_B2103.pdf Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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TSP3H150S TSP3H150S Taiwan Semiconductor Corporation TSP3H150S_B2103.pdf Description: DIODE SCHOTTKY 150V 3A TO277A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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MBR2035CT-Y MBR2035CT-Y Taiwan Semiconductor Corporation MBR2035CT-Y%20SERIES_B2104.pdf Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CT MBR2035CT Taiwan Semiconductor Corporation MBR2035CT%20SERIES_M2104.pdf Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CTH MBR2035CTH Taiwan Semiconductor Corporation MBR2035CT%20SERIES_M2104.pdf Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
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UG1005G UG1005G Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 300V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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UG1005GH UG1005GH Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 300V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MBRS2050CT MBRS2050CT Taiwan Semiconductor Corporation MBRS2035CT%20SERIES_N2103.pdf Description: DIODE ARR SCHOTT 50V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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MBRS2035CT MBRS2035CT Taiwan Semiconductor Corporation MBRS2035CT%20SERIES_N2103.pdf Description: 20A, 35V, PLANAR SCHOTTKY
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
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MBRS2090CT MBRS2090CT Taiwan Semiconductor Corporation MBRS2035CT%20SERIES_N2103.pdf Description: 20A, 90V, PLANAR SCHOTTKY
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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MBRS20H200CT MBRS20H200CT Taiwan Semiconductor Corporation MBRS20H100CT SERIES_J2103.pdf Description: DIODE ARR SCHOT 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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BZX585B18 Taiwan Semiconductor Corporation BZX585B2V4%20SERIES_C1607.pdf Description: SOD-523F, 200MW, 2%, ZENER DIODE
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
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M3Z3V9C RRG M3Z3V9C RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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M3Z3V9C RRG M3Z3V9C RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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M3Z3V9C M3Z3V9C Taiwan Semiconductor Corporation M3Z2V0C%20SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMSZ4678 RHG MMSZ4678 RHG Taiwan Semiconductor Corporation MMSZ4678 SERIES_A2311.pdf Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ4678 RHG MMSZ4678 RHG Taiwan Semiconductor Corporation MMSZ4678 SERIES_A2311.pdf Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZD27C8V2PHRQG BZD27C8V2PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
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BZD27C8V2PHM2G BZD27C8V2PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
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MBRF5200H MBRF5200H Taiwan Semiconductor Corporation MBRF5100%20SERIES_H2105.pdf Description: 5A, 200V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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S5AH S5AH Taiwan Semiconductor Corporation S5AH SERIES_A2102.pdf Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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HS5AH HS5AH Taiwan Semiconductor Corporation HS5AH%20SERIES_A2102.pdf Description: DIODE STANDARD 50V 5A DO214AB
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
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RS2AH RS2AH Taiwan Semiconductor Corporation RS2AH SERIES_B2304.pdf Description: 150NS, 2A, 50V, FAST RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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HS2AH HS2AH Taiwan Semiconductor Corporation HS2AH%20SERIES_A2102.pdf Description: 50NS, 2A, 50V, HIGH EFFICIENT RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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S2AH S2AH Taiwan Semiconductor Corporation S2AH SERIES_A2102.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
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BZT52B5V6 RHG BZT52B5V6 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
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BZT52B5V6 RHG BZT52B5V6 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
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BZT52B5V6-G RHG BZT52B5V6-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52B5V6-G RHG BZT52B5V6-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52B5V6-G BZT52B5V6-G Taiwan Semiconductor Corporation BZT52B2V4-G%20SERIES_H2002.pdf Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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S2GAH S2GAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 400V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S2GAH S2GAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 400V, STANDARD RECOVERY RE
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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S2DAH S2DAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 200V, STANDARD RECOVERY RE
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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S2DAH S2DAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 200V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Qualification: AEC-Q101
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S2BAH S2BAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 100V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S2BAH S2BAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 100V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
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S2KAH S2KAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 800V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Package / Case: DO-214AC, SMA
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S2KAH S2KAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 800V, STANDARD RECOVERY RE
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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S2JAH S2JAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 600V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S2JAH S2JAH Taiwan Semiconductor Corporation S2AAH SERIES_A2102.pdf Description: 1.5A, 600V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
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HS2JAH HS2JAH Taiwan Semiconductor Corporation HS2AAH SERIES_A2102.pdf Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Voltage - DC Reverse (Vr) (Max): 600 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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HS2JAH HS2JAH Taiwan Semiconductor Corporation HS2AAH SERIES_A2102.pdf Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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TLD8S30CAH TLD8S30CAH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: 6600W, 35.05V, 5%, BIDIRECTIONAL
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 136A
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
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TLD8S30CAH TLD8S30CAH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: 6600W, 35.05V, 5%, BIDIRECTIONAL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 136A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
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P4KE68CAH P4KE68CAH Taiwan Semiconductor Corporation Description: TVS DIODE 58.1VWM 92VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 58.1V
Current - Peak Pulse (10/1000µs): 4.5A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SF17G-K SF17G-K Taiwan Semiconductor Corporation SF11G-K SERIES_B2104.pdf Description: DIODE STANDARD 500V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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BZT55C68 L0G BZT55C68 L0G Taiwan Semiconductor Corporation BZT55C2V4 SERIES_I2301.pdf Description: DIODE ZENER 68V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
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BZV55B68 L0G BZV55B68 L0G Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 68V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
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BZT55B68 L0G BZT55B68 L0G Taiwan Semiconductor Corporation BZT55B2V4 SERIES_I2301.pdf Description: DIODE ZENER 68V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
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BZT55C68 BZT55C68 Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_I2301.pdf Description: DIODE ZENER 68V 500MW QMMELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
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BZT55B68 BZT55B68 Taiwan Semiconductor Corporation BZT55B2V4%20SERIES_I2301.pdf Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
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TSZU52C33 TSZU52C33 Taiwan Semiconductor Corporation TSZU52C2V0%20SERIES_G2009.pdf Description: 603, 150MW, 5%, SMALL SIGNAL ZEN
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 150 mW
Supplier Device Package: 0603
Impedance (Max) (Zzt): 80 Ohms
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P6SMB39A P6SMB39A Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
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TSM60NE084PW C0G TSM60NE084PW_A2403.pdf
TSM60NE084PW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
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TSM60NE069CIT C0G TSM60NE069CIT_A2403.pdf
TSM60NE069CIT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
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TSM60NE069PW C0G TSM60NE069PW_A2403.pdf
TSM60NE069PW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
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TSM60NE048PW C0G
TSM60NE048PW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
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TSM60NC165CI
Hersteller: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
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UG54GH UG54G SERIES_F2111.pdf
UG54GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
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UG54GH UG54G SERIES_F2111.pdf
UG54GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
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TSP3H150S TSP3H150S_B2103.pdf
TSP3H150S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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TSP3H150S TSP3H150S_B2103.pdf
TSP3H150S
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A TO277A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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MBR2035CT-Y MBR2035CT-Y%20SERIES_B2104.pdf
MBR2035CT-Y
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CT MBR2035CT%20SERIES_M2104.pdf
MBR2035CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CTH MBR2035CT%20SERIES_M2104.pdf
MBR2035CTH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
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UG1005G UG1004G SERIES_B2104.pdf
UG1005G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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50+1.31 EUR
100+1.05 EUR
500+0.88 EUR
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UG1005GH UG1004G SERIES_B2104.pdf
UG1005GH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 22 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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13+1.63 EUR
50+1.31 EUR
100+1.05 EUR
500+0.88 EUR
1000+0.71 EUR
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MBRS2050CT MBRS2035CT%20SERIES_N2103.pdf
MBRS2050CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 20A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBRS2035CT MBRS2035CT%20SERIES_N2103.pdf
MBRS2035CT
Hersteller: Taiwan Semiconductor Corporation
Description: 20A, 35V, PLANAR SCHOTTKY
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Produkt ist nicht verfügbar
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MBRS2090CT MBRS2035CT%20SERIES_N2103.pdf
MBRS2090CT
Hersteller: Taiwan Semiconductor Corporation
Description: 20A, 90V, PLANAR SCHOTTKY
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBRS20H200CT MBRS20H100CT SERIES_J2103.pdf
MBRS20H200CT
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 20A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX585B18 BZX585B2V4%20SERIES_C1607.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-523F, 200MW, 2%, ZENER DIODE
Current - Reverse Leakage @ Vr: 45 nA @ 12.6 V
Power - Max: 200 mW
Supplier Device Package: SOD-523F
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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M3Z3V9C RRG M3Z2V0C SERIES_B2008.pdf
M3Z3V9C RRG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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M3Z3V9C RRG M3Z2V0C SERIES_B2008.pdf
M3Z3V9C RRG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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81+0.26 EUR
166+0.13 EUR
500+0.11 EUR
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M3Z3V9C M3Z2V0C%20SERIES_B2008.pdf
M3Z3V9C
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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MMSZ4678 RHG MMSZ4678 SERIES_A2311.pdf
MMSZ4678 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ4678 RHG MMSZ4678 SERIES_A2311.pdf
MMSZ4678 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 500MW, 5%, SMALL SIGNAL
Current - Reverse Leakage @ Vr: 7.5 µA @ 1 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 1.8 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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56+0.38 EUR
81+0.26 EUR
166+0.13 EUR
500+0.11 EUR
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BZD27C8V2PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C8V2PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
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BZD27C8V2PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C8V2PHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 1W SUB SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Automotive
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 2 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.09%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBRF5200H MBRF5100%20SERIES_H2105.pdf
MBRF5200H
Hersteller: Taiwan Semiconductor Corporation
Description: 5A, 200V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S5AH S5AH SERIES_A2102.pdf
S5AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 5A DO214AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS5AH HS5AH%20SERIES_A2102.pdf
HS5AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 5A DO214AB
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
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RS2AH RS2AH SERIES_B2304.pdf
RS2AH
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 50V, FAST RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HS2AH HS2AH%20SERIES_A2102.pdf
HS2AH
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 2A, 50V, HIGH EFFICIENT RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S2AH S2AH SERIES_A2102.pdf
S2AH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 2A DO214AA
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52B5V6 RHG BZT52B2V4 series_F15.pdf
BZT52B5V6 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
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BZT52B5V6 RHG BZT52B2V4 series_F15.pdf
BZT52B5V6 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 900 nA @ 2 V
auf Bestellung 4638 Stücke:
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56+0.38 EUR
91+0.23 EUR
148+0.14 EUR
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BZT52B5V6-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B5V6-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52B5V6-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B5V6-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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BZT52B5V6-G BZT52B2V4-G%20SERIES_H2002.pdf
BZT52B5V6-G
Hersteller: Taiwan Semiconductor Corporation
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
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S2GAH S2AAH SERIES_A2102.pdf
S2GAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 400V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S2GAH S2AAH SERIES_A2102.pdf
S2GAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 400V, STANDARD RECOVERY RE
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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33+0.65 EUR
46+0.46 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
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S2DAH S2AAH SERIES_A2102.pdf
S2DAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 200V, STANDARD RECOVERY RE
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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7500+0.11 EUR
15000+0.099 EUR
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S2DAH S2AAH SERIES_A2102.pdf
S2DAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 200V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Qualification: AEC-Q101
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33+0.65 EUR
46+0.46 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
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S2BAH S2AAH SERIES_A2102.pdf
S2BAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 100V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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S2BAH S2AAH SERIES_A2102.pdf
S2BAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 100V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
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33+0.65 EUR
46+0.46 EUR
100+0.24 EUR
500+0.19 EUR
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S2KAH S2AAH SERIES_A2102.pdf
S2KAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 800V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Package / Case: DO-214AC, SMA
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
7500+0.11 EUR
15000+0.099 EUR
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S2KAH S2AAH SERIES_A2102.pdf
S2KAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 800V, STANDARD RECOVERY RE
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
33+0.65 EUR
46+0.46 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
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S2JAH S2AAH SERIES_A2102.pdf
S2JAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 600V, STANDARD RECOVERY RE
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
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AnzahlPrivatkunde
7500+0.11 EUR
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S2JAH S2AAH SERIES_A2102.pdf
S2JAH
Hersteller: Taiwan Semiconductor Corporation
Description: 1.5A, 600V, STANDARD RECOVERY RE
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
auf Bestellung 14975 Stücke:
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AnzahlPrivatkunde
33+0.65 EUR
46+0.46 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
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HS2JAH HS2AAH SERIES_A2102.pdf
HS2JAH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Voltage - DC Reverse (Vr) (Max): 600 V
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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7500+0.15 EUR
15000+0.14 EUR
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HS2JAH HS2AAH SERIES_A2102.pdf
HS2JAH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 1.5A, 600V, HIGH EFFICIENT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
41+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.17 EUR
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TLD8S30CAH TLD8S10AH SERIES_E2310.pdf
TLD8S30CAH
Hersteller: Taiwan Semiconductor Corporation
Description: 6600W, 35.05V, 5%, BIDIRECTIONAL
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 136A
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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750+3.26 EUR
1500+2.8 EUR
2250+2.63 EUR
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TLD8S30CAH TLD8S10AH SERIES_E2310.pdf
TLD8S30CAH
Hersteller: Taiwan Semiconductor Corporation
Description: 6600W, 35.05V, 5%, BIDIRECTIONAL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 6600W (6.6kW)
Voltage - Clamping (Max) @ Ipp: 48.4V
Voltage - Breakdown (Min): 33.3V
Bidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 136A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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4+5.4 EUR
10+4.53 EUR
100+3.67 EUR
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P4KE68CAH
P4KE68CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58.1VWM 92VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 58.1V
Current - Peak Pulse (10/1000µs): 4.5A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SF17G-K SF11G-K SERIES_B2104.pdf
SF17G-K
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 500V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Produkt ist nicht verfügbar
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BZT55C68 L0G BZT55C2V4 SERIES_I2301.pdf
BZT55C68 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Produkt ist nicht verfügbar
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BZV55B68 L0G BZV55B2V4%20SERIES_G2301.pdf
BZV55B68 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Produkt ist nicht verfügbar
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BZT55B68 L0G BZT55B2V4 SERIES_I2301.pdf
BZT55B68 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Produkt ist nicht verfügbar
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BZT55C68 BZT55C2V4%20SERIES_I2301.pdf
BZT55C68
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 68V 500MW QMMELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Produkt ist nicht verfügbar
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BZT55B68 BZT55B2V4%20SERIES_I2301.pdf
BZT55B68
Hersteller: Taiwan Semiconductor Corporation
Description: MMELF, 500MW, 2%, SMALL SIGNAL Z
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 160 Ohms
Supplier Device Package: QMMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 51 V
Produkt ist nicht verfügbar
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TSZU52C33 TSZU52C2V0%20SERIES_G2009.pdf
TSZU52C33
Hersteller: Taiwan Semiconductor Corporation
Description: 603, 150MW, 5%, SMALL SIGNAL ZEN
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 150 mW
Supplier Device Package: 0603
Impedance (Max) (Zzt): 80 Ohms
Produkt ist nicht verfügbar
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P6SMB39A P6SMB SERIES_Q2209.pdf
P6SMB39A
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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