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6A10G B0G 6A10G B0G Taiwan Semiconductor Corporation 6A05G%20SERIES_F2104.pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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P6KE9.1AH P6KE9.1AH Taiwan Semiconductor Corporation Description: TVS 600W 9.1V DO-15
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SMA4S30AH SMA4S30AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 30VWM 48.7VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 48.7V
Voltage - Breakdown (Min): 33.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-128
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 8.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZX79B6V8 A0G BZX79B6V8 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_E2103.pdf Description: DIODE ZENER 6.8V 500MW DO35
Produkt ist nicht verfügbar
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PU1BLWH PU1BLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 100V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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PU1BLWH PU1BLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 100V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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PU3BAH PU3BAH Taiwan Semiconductor Corporation PU3BAH SERIES_B2109.pdf Description: DIODE STANDARD 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
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PU3BAH PU3BAH Taiwan Semiconductor Corporation PU3BAH SERIES_B2109.pdf Description: DIODE STANDARD 100V 3A DO214AC
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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PU2DLWH PU2DLWH Taiwan Semiconductor Corporation PU2BLWH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
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PU2DLWH PU2DLWH Taiwan Semiconductor Corporation PU2BLWH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123W
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Technology: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
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PU4BCH PU4BCH Taiwan Semiconductor Corporation PU4BCH%20SERIES_C2110.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
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PU4BCH PU4BCH Taiwan Semiconductor Corporation PU4BCH%20SERIES_C2110.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
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PU1BLSH PU1BLSH Taiwan Semiconductor Corporation PU1BLSH SERIES_B2109.pdf Description: DIODE STANDARD 100V 1A SOD123HE
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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PU1BLSH PU1BLSH Taiwan Semiconductor Corporation PU1BLSH SERIES_B2109.pdf Description: DIODE STANDARD 100V 1A SOD123HE
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
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PU2DLSH PU2DLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
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PU2DLSH PU2DLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PU4DCH PU4DCH Taiwan Semiconductor Corporation PU4BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 4A DO214AB
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
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PU4DCH PU4DCH Taiwan Semiconductor Corporation PU4BCH SERIES_C2110.pdf Description: DIODE GEN PURP 200V 4A DO214AB
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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PUUP3BH PUUP3BH Taiwan Semiconductor Corporation PUUP3BH%20SERIES_B2109.pdf Description: DIODE GEN PURP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Produkt ist nicht verfügbar
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PUUP3BH PUUP3BH Taiwan Semiconductor Corporation PUUP3BH%20SERIES_B2109.pdf Description: DIODE GEN PURP 100V 3A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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500+0.69 EUR
1000+0.55 EUR
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PUUP4BH PUUP4BH Taiwan Semiconductor Corporation PUUP4BH%20SERIES_B2109.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
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PUUP4BH PUUP4BH Taiwan Semiconductor Corporation PUUP4BH%20SERIES_B2109.pdf Description: 25NS, 4A, 100V, ULTRA FAST RECOV
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PU1BMH M3G PU1BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 1A, 100V, ULTRA FAST RECOV
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PU1BMH M3G PU1BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 1A, 100V, ULTRA FAST RECOV
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PUUP8DH PUUP8DH Taiwan Semiconductor Corporation PUUP8BH SERIES_A2111.pdf Description: DIODE GEN PURP 200V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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PUUP8DH PUUP8DH Taiwan Semiconductor Corporation PUUP8BH SERIES_A2111.pdf Description: DIODE GEN PURP 200V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
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PU1DLWH PU1DLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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PU1DLWH PU1DLWH Taiwan Semiconductor Corporation PU1BLWH SERIES_A2109.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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PU3DAH PU3DAH Taiwan Semiconductor Corporation PU3BAH%20SERIES_B2109.pdf Description: 25NS, 3A, 200V, ULTRA FAST RECOV
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PU3DAH PU3DAH Taiwan Semiconductor Corporation PU3BAH%20SERIES_B2109.pdf Description: 25NS, 3A, 200V, ULTRA FAST RECOV
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PUUP6BH PUUP6BH Taiwan Semiconductor Corporation PUUP6BH%20SERIES_C2109.pdf Description: DIODE GEN PURP 100V 6A TO277A
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PUUP6BH PUUP6BH Taiwan Semiconductor Corporation PUUP6BH%20SERIES_C2109.pdf Description: DIODE GEN PURP 100V 6A TO277A
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PU2BMH M3G PU2BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 2A, 100V, ULTRA FAST RECOV
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PU2BMH M3G PU2BMH M3G Taiwan Semiconductor Corporation Description: 25NS, 2A, 100V, ULTRA FAST RECOV
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PU1DMH M3G PU1DMH M3G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 36 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PU1DMH M3G PU1DMH M3G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 36 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
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TSF10H100C C0G TSF10H100C C0G Taiwan Semiconductor Corporation TSF10H100C-TSF10H200C_I2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBR10H100CT C0G MBR10H100CT C0G Taiwan Semiconductor Corporation MBR10H100CT%20SERIES_J2104.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
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TST10H100CW C0G TST10H100CW C0G Taiwan Semiconductor Corporation TST10H100CW-TST10H200CW_B2104.pdf Description: DIODE SCHOTTKY 100V 5A TO220AB
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P6KE6.8AH P6KE6.8AH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS 600W 6.8V DO-15
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 60A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
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HER152G HER152G Taiwan Semiconductor Corporation pdf.php?pn=HER152G Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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HER151G HER151G Taiwan Semiconductor Corporation pdf.php?pn=HER151G Description: DIODE GEN PURP 50V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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HER153G HER153G Taiwan Semiconductor Corporation pdf.php?pn=HER153G Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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TLD6S10AH TLD6S10AH Taiwan Semiconductor Corporation TLD6S10AH SERIES_D2103.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 271A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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TLD5S10AH TLD5S10AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 10VWM 17VC DO218AB
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 2800W (2.8kW)
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 212A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
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ES2DFS ES2DFS Taiwan Semiconductor Corporation ES2BFS SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DFS ES2DFS Taiwan Semiconductor Corporation ES2BFS SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2DAL Taiwan Semiconductor Corporation ES2BAL SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2DAL Taiwan Semiconductor Corporation ES2BAL SERIES_D2103.pdf Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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SRAS2060 MNG SRAS2060 MNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_M2103.pdf Description: DIODE SCHOTTKY 60V 20A TO263AB
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SRAS2060HMNG SRAS2060HMNG Taiwan Semiconductor Corporation SRAS2020%20SERIES_M2103.pdf Description: DIODE SCHOTTKY 60V 20A TO263AB
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MBRS1635HMNG MBRS1635HMNG Taiwan Semiconductor Corporation MBRS1635%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 35V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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TQM300NB06DCR RLG TQM300NB06DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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TQM300NB06DCR RLG TQM300NB06DCR RLG Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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500+1.09 EUR
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GBL205 GBL205 Taiwan Semiconductor Corporation GBL201 SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1042 Stücke:
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18+1.03 EUR
100+0.68 EUR
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SFAS806G MNG SFAS806G MNG Taiwan Semiconductor Corporation SFAS801G%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 8A TO263AB
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SFAS806GHMNG SFAS806GHMNG Taiwan Semiconductor Corporation SFAS801G%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 8A TO263AB
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BZX79B6V2 A0G BZX79B6V2 A0G Taiwan Semiconductor Corporation BZX79B2V4%20SERIES_E2103.pdf Description: DIODE ZENER 6.2V 500MW DO35
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RS1GAL RS1GAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
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RS1GAL RS1GAL Taiwan Semiconductor Corporation RS1DAL SERIES_C2304.pdf Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
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6A10G B0G 6A05G%20SERIES_F2104.pdf
6A10G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Bulk
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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P6KE9.1AH
P6KE9.1AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 600W 9.1V DO-15
Voltage - Reverse Standoff (Typ): 7.78V
Current - Peak Pulse (10/1000µs): 47A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Qualification: AEC-Q101
Grade: Automotive
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SMA4S30AH SMA4S12AH SERIES_C2103.pdf
SMA4S30AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.7VC SOD128
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 48.7V
Voltage - Breakdown (Min): 33.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-128
Voltage - Reverse Standoff (Typ): 30V
Current - Peak Pulse (10/1000µs): 8.2A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
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BZX79B6V8 A0G BZX79B2V4%20SERIES_E2103.pdf
BZX79B6V8 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.8V 500MW DO35
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PU1BLWH PU1BLWH SERIES_A2109.pdf
PU1BLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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PU1BLWH PU1BLWH SERIES_A2109.pdf
PU1BLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
auf Bestellung 19790 Stücke:
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Anzahl Preis
35+0.51 EUR
52+0.34 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.13 EUR
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PU3BAH PU3BAH SERIES_B2109.pdf
PU3BAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 3A DO214AC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
auf Bestellung 7500 Stücke:
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Anzahl Preis
7500+0.19 EUR
Mindestbestellmenge: 7500
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PU3BAH PU3BAH SERIES_B2109.pdf
PU3BAH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 3A DO214AC
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 13679 Stücke:
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Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 19
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PU2DLWH PU2BLWH SERIES_B2109.pdf
PU2DLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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PU2DLWH PU2BLWH SERIES_B2109.pdf
PU2DLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123W
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F: 33pF @ 4V, 1MHz
Technology: Standard
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 23840 Stücke:
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Anzahl Preis
33+0.55 EUR
42+0.42 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 33
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PU4BCH PU4BCH%20SERIES_C2110.pdf
PU4BCH
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
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PU4BCH PU4BCH%20SERIES_C2110.pdf
PU4BCH
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
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PU1BLSH PU1BLSH SERIES_B2109.pdf
PU1BLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A SOD123HE
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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Anzahl Preis
10000+0.14 EUR
Mindestbestellmenge: 10000
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PU1BLSH PU1BLSH SERIES_B2109.pdf
PU1BLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1A SOD123HE
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
auf Bestellung 16821 Stücke:
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24+0.76 EUR
38+0.47 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
5000+0.16 EUR
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PU2DLSH PU2BLSH SERIES_B2109.pdf
PU2DLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PU2DLSH PU2BLSH SERIES_B2109.pdf
PU2DLSH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD123HE
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123HE
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123H
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PU4DCH PU4BCH SERIES_C2110.pdf
PU4DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
Mindestbestellmenge: 3000
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PU4DCH PU4BCH SERIES_C2110.pdf
PU4DCH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 78pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 5242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.86 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
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PUUP3BH PUUP3BH%20SERIES_B2109.pdf
PUUP3BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A TO277A
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Produkt ist nicht verfügbar
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PUUP3BH PUUP3BH%20SERIES_B2109.pdf
PUUP3BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 3A TO277A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
16+1.14 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 14
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PUUP4BH PUUP4BH%20SERIES_B2109.pdf
PUUP4BH
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
auf Bestellung 6000 Stücke:
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PUUP4BH PUUP4BH%20SERIES_B2109.pdf
PUUP4BH
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 4A, 100V, ULTRA FAST RECOV
auf Bestellung 6000 Stücke:
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PU1BMH M3G
PU1BMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 100V, ULTRA FAST RECOV
auf Bestellung 3000 Stücke:
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PU1BMH M3G
PU1BMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 1A, 100V, ULTRA FAST RECOV
auf Bestellung 4760 Stücke:
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PUUP8DH PUUP8BH SERIES_A2111.pdf
PUUP8DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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Anzahl Preis
6000+0.42 EUR
Mindestbestellmenge: 6000
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PUUP8DH PUUP8BH SERIES_A2111.pdf
PUUP8DH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO277A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 17105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.51 EUR
Mindestbestellmenge: 10
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PU1DLWH PU1BLWH SERIES_A2109.pdf
PU1DLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PU1DLWH PU1BLWH SERIES_A2109.pdf
PU1DLWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
auf Bestellung 17495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
100+0.23 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.13 EUR
Mindestbestellmenge: 35
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PU3DAH PU3BAH%20SERIES_B2109.pdf
PU3DAH
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 200V, ULTRA FAST RECOV
auf Bestellung 7500 Stücke:
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PU3DAH PU3BAH%20SERIES_B2109.pdf
PU3DAH
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 200V, ULTRA FAST RECOV
auf Bestellung 22424 Stücke:
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PUUP6BH PUUP6BH%20SERIES_C2109.pdf
PUUP6BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A TO277A
Produkt ist nicht verfügbar
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PUUP6BH PUUP6BH%20SERIES_C2109.pdf
PUUP6BH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A TO277A
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
11+1.73 EUR
100+1.35 EUR
500+1.11 EUR
1000+0.88 EUR
2000+0.82 EUR
Mindestbestellmenge: 10
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PU2BMH M3G
PU2BMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
auf Bestellung 3000 Stücke:
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PU2BMH M3G
PU2BMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 100V, ULTRA FAST RECOV
auf Bestellung 5999 Stücke:
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PU1DMH M3G
PU1DMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 36 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PU1DMH M3G
PU1DMH M3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 36 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: Micro SMA
auf Bestellung 5720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
25+0.71 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.32 EUR
Mindestbestellmenge: 22
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TSF10H100C C0G TSF10H100C-TSF10H200C_I2105.pdf
TSF10H100C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
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MBR10H100CT C0G MBR10H100CT%20SERIES_J2104.pdf
MBR10H100CT C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
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TST10H100CW C0G TST10H100CW-TST10H200CW_B2104.pdf
TST10H100CW C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A TO220AB
Produkt ist nicht verfügbar
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P6KE6.8AH P6KE SERIES_P2203.pdf
P6KE6.8AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS 600W 6.8V DO-15
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 10.5V
Voltage - Breakdown (Min): 6.46V
Unidirectional Channels: 1
Supplier Device Package: DO-204AC (DO-15)
Voltage - Reverse Standoff (Typ): 5.8V
Current - Peak Pulse (10/1000µs): 60A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HER152G pdf.php?pn=HER152G
HER152G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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HER151G pdf.php?pn=HER151G
HER151G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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HER153G pdf.php?pn=HER153G
HER153G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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TLD6S10AH TLD6S10AH SERIES_D2103.pdf
TLD6S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 3600W (3.6kW)
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 271A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TLD5S10AH TLD5S10AH SERIES_D2103.pdf
TLD5S10AH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 10VWM 17VC DO218AB
Mounting Type: Surface Mount
Package / Case: DO-218AB
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 2800W (2.8kW)
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 11.1V
Unidirectional Channels: 1
Supplier Device Package: DO-218AB
Voltage - Reverse Standoff (Typ): 10V
Current - Peak Pulse (10/1000µs): 212A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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ES2DFS ES2BFS SERIES_D2103.pdf
ES2DFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DFS ES2BFS SERIES_D2103.pdf
ES2DFS
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2BAL SERIES_D2103.pdf
ES2DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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ES2DAL ES2BAL SERIES_D2103.pdf
ES2DAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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SRAS2060 MNG SRAS2020%20SERIES_M2103.pdf
SRAS2060 MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO263AB
Produkt ist nicht verfügbar
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SRAS2060HMNG SRAS2020%20SERIES_M2103.pdf
SRAS2060HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A TO263AB
Produkt ist nicht verfügbar
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MBRS1635HMNG MBRS1635%20SERIES_K2103.pdf
MBRS1635HMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 35 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TQM300NB06DCR RLG
TQM300NB06DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.84 EUR
5000+0.8 EUR
Mindestbestellmenge: 2500
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TQM300NB06DCR RLG
TQM300NB06DCR RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8PDFNU
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W (Ta), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
11+1.65 EUR
100+1.29 EUR
500+1.09 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
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GBL205 GBL201 SERIES_J2103.pdf
GBL205
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
18+1.03 EUR
100+0.68 EUR
500+0.52 EUR
Mindestbestellmenge: 11
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SFAS806G MNG SFAS801G%20SERIES_N2103.pdf
SFAS806G MNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
Produkt ist nicht verfügbar
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SFAS806GHMNG SFAS801G%20SERIES_N2103.pdf
SFAS806GHMNG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
Produkt ist nicht verfügbar
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BZX79B6V2 A0G BZX79B2V4%20SERIES_E2103.pdf
BZX79B6V2 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Produkt ist nicht verfügbar
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RS1GAL RS1DAL SERIES_C2304.pdf
RS1GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1GAL RS1DAL SERIES_C2304.pdf
RS1GAL
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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