Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25567) > Seite 210 nach 427
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GBL205 | Taiwan Semiconductor Corporation |
 Description: BRIDGE RECT 1PHASE 600V 2A GBLPackaging: Tube Package / Case: 4-SIP, GBL Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBL Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 1042 Stücke: Lieferzeit 10-14 Tag (e) |
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,-TO-263AB.jpg "SFAS806G MNG") |
SFAS806G MNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 8A TO263AB |
Produkt ist nicht verfügbar |
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SFAS806GHMNG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 8A TO263AB |
Produkt ist nicht verfügbar |
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BZX79B6V2 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 6.2V 500MW DO35 |
Produkt ist nicht verfügbar |
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RS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A THIN SMA Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS1GAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A THIN SMA Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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MBRS1635 MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 35V 16A TO263AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1PGSMB5933 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 22V 3W DO214AA Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 17.5 Ohms Supplier Device Package: DO-214AA (SMB) Power - Max: 3 W Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V |
Produkt ist nicht verfügbar |
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ES1JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 27365 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ES1JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 600 |
auf Bestellung 13920 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1CL RFG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 150V 1A SUB SMA |
Produkt ist nicht verfügbar |
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SMBJ78A R5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA |
Produkt ist nicht verfügbar |
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SMBJ78A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA |
Produkt ist nicht verfügbar |
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SMBJ78AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA Voltage - Breakdown (Min): 86.7V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 78V Current - Peak Pulse (10/1000µs): 5A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 126V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SMBJ78AHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA |
Produkt ist nicht verfügbar |
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SMBJ78AHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 78VWM 126VC DO214AA Qualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 126V Voltage - Breakdown (Min): 86.7V Unidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 78V Current - Peak Pulse (10/1000µs): 5A Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N5392GH | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N5392G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 100V 1.5A DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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ES2JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
auf Bestellung 39020 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ES2JFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 2A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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GP1006 C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 800V 10A TO220AB |
Produkt ist nicht verfügbar |
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GP1006HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY GP 800V 10A TO220AB Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar |
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RS1MAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A THIN SMA Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS1MAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A THIN SMA Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Thin SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 7pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SS315 R7 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
Produkt ist nicht verfügbar |
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| SS315 M6 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
Produkt ist nicht verfügbar |
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| SS315 R6G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
Produkt ist nicht verfügbar |
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| SS315 R6 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY DO214AB |
Produkt ist nicht verfügbar |
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SS315H | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AB Qualification: AEC-Q101 Grade: Automotive Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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GBU2507 | Taiwan Semiconductor Corporation |
Description: DIODE BRIDGE 25A 1000V GBU Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Average Rectified (Io): 25 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-ESIP, GBU Packaging: Tube |
auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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GBU2506 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 800V 25A GBU Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ110A V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 110VWM 177VC DO214AB |
Produkt ist nicht verfügbar |
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SMCJ110A V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 110VWM 177VC DO214AB |
Produkt ist nicht verfügbar |
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SMCJ110A M6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 110VWM 177VC DO214AB |
Produkt ist nicht verfügbar |
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HS1DFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1DFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 6508 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1DFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 24500 Stücke: Lieferzeit 10-14 Tag (e) |
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ES1DFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 27375 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2DFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 32pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS2DFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A SOD128 Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 32pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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RS2DFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 11pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS2DFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 11pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 6990 Stücke: Lieferzeit 10-14 Tag (e) |
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HS2GFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A SOD128 Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS2GFS | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) |
auf Bestellung 6030 Stücke: Lieferzeit 10-14 Tag (e) |
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HS1GFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A SOD128 Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1GFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 400V 1A SOD128 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 17pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-128 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-128 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1MFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A SOD128 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HS1MFS | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TLD8S33AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO218AB Packaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 124A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2250 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD8S33AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO218AB Packaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 124A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2380 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS1JAL | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 1A THIN SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RS1JL MHG | Taiwan Semiconductor Corporation |
Description: DIODE GP 600V 800MA SUB SMA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Sub SMA Current - Average Rectified (Io): 800mA Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SK315B M4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SK315BHM4G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SK315AHR3G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 3A DO214AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GBL205 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 1042 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 18+ | 1.23 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.62 EUR |
| SFAS806G MNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
Description: DIODE GEN PURP 400V 8A TO263AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SFAS806GHMNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO263AB
Description: DIODE GEN PURP 400V 8A TO263AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79B6V2 A0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Description: DIODE ZENER 6.2V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1GAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1GAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS1635 MNG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A TO263AB
Description: DIODE SCHOTTKY 35V 16A TO263AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1PGSMB5933 R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
Description: DIODE ZENER 22V 3W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14000+ | 0.17 EUR |
| ES1JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 27365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 37+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.21 EUR |
| 5000+ | 0.19 EUR |
| ES1JFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES1JFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Description: DIODE STANDARD 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 13920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 37+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 2000+ | 0.21 EUR |
| 5000+ | 0.19 EUR |
| ES1CL RFG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 1A SUB SMA
Description: DIODE GEN PURP 150V 1A SUB SMA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ78A R5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Description: TVS DIODE 78VWM 126VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ78A M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Description: TVS DIODE 78VWM 126VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ78AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Voltage - Breakdown (Min): 86.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 78V
Current - Peak Pulse (10/1000µs): 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 126V
Description: TVS DIODE 78VWM 126VC DO214AA
Voltage - Breakdown (Min): 86.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 78V
Current - Peak Pulse (10/1000µs): 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 126V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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Stück im Wert von UAH
| SMBJ78AHR5G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Description: TVS DIODE 78VWM 126VC DO214AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMBJ78AHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 78VWM 126VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 126V
Voltage - Breakdown (Min): 86.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 78V
Current - Peak Pulse (10/1000µs): 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 78VWM 126VC DO214AA
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 126V
Voltage - Breakdown (Min): 86.7V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 78V
Current - Peak Pulse (10/1000µs): 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5392GH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5392G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14000+ | 0.21 EUR |
| 28000+ | 0.2 EUR |
| ES2JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 39020 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 2000+ | 0.27 EUR |
| 5000+ | 0.24 EUR |
| ES2JFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ES2JFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GP1006 C0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
Description: DIODE ARRAY GP 800V 10A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GP1006HC0G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Description: DIODE ARRAY GP 800V 10A TO220AB
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1MAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 1000V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1MAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1000V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS315 R7 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS315 M6 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS315 R6G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS315 R6 |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY DO214AB
Description: DIODE SCHOTTKY DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS315H |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Description: DIODE SCHOTTKY 150V 3A DO214AB
Qualification: AEC-Q101
Grade: Automotive
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GBU2507 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE BRIDGE 25A 1000V GBU
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Packaging: Tube
Description: DIODE BRIDGE 25A 1000V GBU
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Average Rectified (Io): 25 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-ESIP, GBU
Packaging: Tube
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 20+ | 2.27 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.5 EUR |
| GBU2506 |
|
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 25A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| SMCJ110A V6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ110A V7G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ110A M6G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110VWM 177VC DO214AB
Description: TVS DIODE 110VWM 177VC DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1DFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1DFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 6508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.19 EUR |
| 5000+ | 0.18 EUR |
| ES1DFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 24500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14000+ | 0.17 EUR |
| ES1DFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 27375 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.94 EUR |
| 37+ | 0.58 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| HS2DFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS2DFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Description: DIODE GEN PURP 200V 2A SOD128
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 36+ | 0.58 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.2 EUR |
| 5000+ | 0.19 EUR |
| RS2DFS |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS2DFS |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 32+ | 0.68 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.19 EUR |
| HS2GFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A SOD128
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Description: DIODE GEN PURP 400V 2A SOD128
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS2GFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 400V 2A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
auf Bestellung 6030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 36+ | 0.58 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.2 EUR |
| 5000+ | 0.19 EUR |
| HS1GFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A SOD128
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HS1GFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Description: DIODE STANDARD 400V 1A SOD128
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-128
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-128
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HS1MFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
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Stück im Wert von UAH
| HS1MFS |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLD8S33AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 750+ | 2.25 EUR |
| 1500+ | 2.09 EUR |
| 2250+ | 2.05 EUR |
| TLD8S33AH |
|
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 124A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.33 EUR |
| 10+ | 4.13 EUR |
| 100+ | 2.88 EUR |
| RS1JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS1JAL |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE STANDARD 600V 1A THIN SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS1JL MHG |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SK315B M4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
Description: DIODE SCHOTTKY 150V 3A DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SK315BHM4G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AA
Description: DIODE SCHOTTKY 150V 3A DO214AA
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SK315AHR3G |
|
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 150V 3A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH