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1.5SMC36CA R6G 1.5SMC36CA R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC36CAH 1.5SMC36CAH Taiwan Semiconductor Corporation 1.5SMCH SERIES_B2207.pdf Description: TVS DIODE 30.8VWM 49.9VC DO214AB
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC36CA M6 1.5SMC36CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Produkt ist nicht verfügbar
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1.5SMC36CA R6 1.5SMC36CA R6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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6A20G 6A20G Taiwan Semiconductor Corporation Description: 6A, 200V, STANDARD RECOVERY RECT
Produkt ist nicht verfügbar
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6A20G 6A20G Taiwan Semiconductor Corporation Description: 6A, 200V, STANDARD RECOVERY RECT
Produkt ist nicht verfügbar
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TSS0230U RGG TSS0230U RGG Taiwan Semiconductor Corporation TSS0230U_G1706.pdf Description: DIODE SCHOTTKY 35V 200MA 0603
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: 0603
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSS0230LU RGG TSS0230LU RGG Taiwan Semiconductor Corporation TSS0230LU_C1601.pdf Description: DIODE SCHOTTKY 35V 200MA 0603
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: 0603
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF43AHRVG SMF43AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 43VWM 69.4VC SOD123W
auf Bestellung 12000 Stücke:
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3000+0.32 EUR
6000+0.3 EUR
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SMF43AHRVG SMF43AHRVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 43VWM 69.4VC SOD123W
auf Bestellung 12000 Stücke:
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19+1.15 EUR
23+0.93 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.36 EUR
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SMF45A RVG SMF45A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 45VWM 72.7VC SOD123W
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 45V
Current - Peak Pulse (10/1000µs): 2.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
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SMF45A RVG SMF45A RVG Taiwan Semiconductor Corporation SMF5.0A%20SERIES_D2103.pdf Description: TVS DIODE 45VWM 72.7VC SOD123W
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 45V
Current - Peak Pulse (10/1000µs): 2.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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18+1.18 EUR
29+0.73 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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RS1JL M2G RS1JL M2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1JL RUG RS1JL RUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1JLHMTG RS1JLHMTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JFS MXG RS1JFS MXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 600V
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RS1JLHRVG RS1JLHRVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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RS1JL RFG RS1JL RFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JLHM2G RS1JLHM2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
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RS1J M2G RS1J M2G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
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RS1JHR3G RS1JHR3G Taiwan Semiconductor Corporation RS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Technology: Standard
Reverse Recovery Time (trr): 250 ns
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RS1JLHRFG RS1JLHRFG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
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RS1JL RQG RS1JL RQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JLHRHG RS1JLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JLHRQG RS1JLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
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RS1GL MHG RS1GL MHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1GLHRHG RS1GLHRHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1GLHRUG RS1GLHRUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GL MTG RS1GL MTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GLHRVG RS1GLHRVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GLHMTG RS1GLHMTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GL MQG RS1GL MQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
Produkt ist nicht verfügbar
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RS1GLHM2G RS1GLHM2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GLHRTG RS1GLHRTG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GFSHMXG RS1GFSHMXG Taiwan Semiconductor Corporation RS1xFS_DS.pdf Description: DIODE, FAST, 1A, 400V
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RS1GLHMQG RS1GLHMQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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RS1GLHMHG RS1GLHMHG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1GLHR3G RS1GLHR3G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 400V 800MA SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1GLHRQG RS1GLHRQG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GEN PURP 400V 800MA SUBSMA
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RS1GL M2G RS1GL M2G Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZV55B43 L1G BZV55B43 L1G Taiwan Semiconductor Corporation BZV55B2V4%20Series_F1804.pdf Description: DIODE ZENER 43V 500MW MINI MELF
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FR156G B0G FR156G B0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156G R0G FR156G R0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156G A0G FR156G A0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156GHA0G FR156GHA0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156GHR0G FR156GHR0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE GEN PURP 800V 1.5A DO204AC
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FR156GHB0G FR156GHB0G Taiwan Semiconductor Corporation FR151G%20SERIES_I2105.pdf Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSH188CX RFG TSH188CX RFG Taiwan Semiconductor Corporation TSH188_C13.pdf Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
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TSH188CX RFG TSH188CX RFG Taiwan Semiconductor Corporation TSH188_C13.pdf Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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TSH193CX RFG TSH193CX RFG Taiwan Semiconductor Corporation TSH193_B1608.pdf Description: MAGNETIC SWITCH SOT23
Part Status: Active
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Test Condition: 25°C
Packaging: Tape & Reel (TR)
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TSH193CX RFG TSH193CX RFG Taiwan Semiconductor Corporation TSH193_B1608.pdf Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 5mA
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BZX55B51 A0G BZX55B51 A0G Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_F1610.pdf Description: DIODE ZENER 51V 500MW DO35
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1.5SMC75A V7G 1.5SMC75A V7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A V6G 1.5SMC75A V6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R6G 1.5SMC75A R6G Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75A M6G 1.5SMC75A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R7G 1.5SMC75A R7G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R7 1.5SMC75A R7 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75A M6 1.5SMC75A M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75AHM6G 1.5SMC75AHM6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_R2102.pdf Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC36CA R6G
1.5SMC36CA R6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1.5SMC36CAH 1.5SMCH SERIES_B2207.pdf
1.5SMC36CAH
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30.8VWM 49.9VC DO214AB
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1.5SMC36CA M6
1.5SMC36CA M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Produkt ist nicht verfügbar
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1.5SMC36CA R6
1.5SMC36CA R6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Bidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 30.8V
Current - Peak Pulse (10/1000µs): 31A
Applications: Telecom
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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6A20G
6A20G
Hersteller: Taiwan Semiconductor Corporation
Description: 6A, 200V, STANDARD RECOVERY RECT
Produkt ist nicht verfügbar
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6A20G
6A20G
Hersteller: Taiwan Semiconductor Corporation
Description: 6A, 200V, STANDARD RECOVERY RECT
Produkt ist nicht verfügbar
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TSS0230U RGG TSS0230U_G1706.pdf
TSS0230U RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 200MA 0603
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: 0603
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 18pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TSS0230LU RGG TSS0230LU_C1601.pdf
TSS0230LU RGG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 200MA 0603
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: 0603
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMF43AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF43AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC SOD123W
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AnzahlPrivatkunde
3000+0.32 EUR
6000+0.3 EUR
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SMF43AHRVG SMF5.0A%20SERIES_D2103.pdf
SMF43AHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 43VWM 69.4VC SOD123W
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19+1.15 EUR
23+0.93 EUR
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SMF45A RVG SMF5.0A%20SERIES_D2103.pdf
SMF45A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 45V
Current - Peak Pulse (10/1000µs): 2.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
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SMF45A RVG SMF5.0A%20SERIES_D2103.pdf
SMF45A RVG
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC SOD123W
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Unidirectional Channels: 1
Supplier Device Package: SOD-123W
Voltage - Reverse Standoff (Typ): 45V
Current - Peak Pulse (10/1000µs): 2.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
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18+1.18 EUR
29+0.73 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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RS1JL M2G RS1AL%20SERIES_N2103.pdf
RS1JL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RS1JL RUG RS1AL%20SERIES_N2103.pdf
RS1JL RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JLHMTG RS1AL%20SERIES_N2103.pdf
RS1JLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JFS MXG RS1xFS_DS.pdf
RS1JFS MXG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 600V
Produkt ist nicht verfügbar
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RS1JLHRVG RS1AL%20SERIES_N2103.pdf
RS1JLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1JL RFG RS1AL%20SERIES_N2103.pdf
RS1JL RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1JLHM2G RS1AL%20SERIES_N2103.pdf
RS1JLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1J M2G RS1A%20SERIES_L2102.pdf
RS1J M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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RS1JHR3G RS1A%20SERIES_L2102.pdf
RS1JHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Produkt ist nicht verfügbar
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RS1JLHRFG RS1AL%20SERIES_N2103.pdf
RS1JLHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Produkt ist nicht verfügbar
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RS1JL RQG RS1AL%20SERIES_N2103.pdf
RS1JL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1JLHRHG RS1AL%20SERIES_N2103.pdf
RS1JLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1JLHRQG RS1AL%20SERIES_N2103.pdf
RS1JLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 600V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Produkt ist nicht verfügbar
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RS1GL MHG RS1AL%20SERIES_N2103.pdf
RS1GL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1GLHRHG RS1AL%20SERIES_N2103.pdf
RS1GLHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1GLHRUG RS1AL%20SERIES_N2103.pdf
RS1GLHRUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1GL MTG RS1AL%20SERIES_N2103.pdf
RS1GL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RS1GLHRVG RS1AL%20SERIES_N2103.pdf
RS1GLHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GLHMTG RS1AL%20SERIES_N2103.pdf
RS1GLHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GL MQG RS1AL%20SERIES_N2103.pdf
RS1GL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Produkt ist nicht verfügbar
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RS1GLHM2G RS1AL%20SERIES_N2103.pdf
RS1GLHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GLHRTG RS1AL%20SERIES_N2103.pdf
RS1GLHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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RS1GFSHMXG RS1xFS_DS.pdf
RS1GFSHMXG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, FAST, 1A, 400V
Produkt ist nicht verfügbar
Mindestbestellmenge: 28000 Stücke
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RS1GLHMQG RS1AL%20SERIES_N2103.pdf
RS1GLHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Produkt ist nicht verfügbar
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RS1GLHMHG RS1AL%20SERIES_N2103.pdf
RS1GLHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1GLHR3G RS1AL%20SERIES_N2103.pdf
RS1GLHR3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STD 400V 800MA SUB SMA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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RS1GLHRQG RS1AL%20SERIES_N2103.pdf
RS1GLHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 800MA SUBSMA
Produkt ist nicht verfügbar
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RS1GL M2G RS1AL%20SERIES_N2103.pdf
RS1GL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GP 400V 800MA SUB SMA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sub SMA
Current - Average Rectified (Io): 800mA
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BZV55B43 L1G BZV55B2V4%20Series_F1804.pdf
BZV55B43 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 500MW MINI MELF
Produkt ist nicht verfügbar
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FR156G B0G FR151G%20SERIES_I2105.pdf
FR156G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Produkt ist nicht verfügbar
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FR156G R0G FR151G%20SERIES_I2105.pdf
FR156G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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FR156G A0G FR151G%20SERIES_I2105.pdf
FR156G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Produkt ist nicht verfügbar
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FR156GHA0G FR151G%20SERIES_I2105.pdf
FR156GHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Produkt ist nicht verfügbar
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FR156GHR0G FR151G%20SERIES_I2105.pdf
FR156GHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1.5A DO204AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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FR156GHB0G FR151G%20SERIES_I2105.pdf
FR156GHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1.5A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSH188CX RFG TSH188_C13.pdf
TSH188CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.55 EUR
6000+1.45 EUR
9000+1.38 EUR
Mindestbestellmenge: 3000 Stücke
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TSH188CX RFG TSH188_C13.pdf
TSH188CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 50mA
Sensing Range: ±25mT Trip, ±5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 24V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Analog Voltage
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.88 EUR
10+2.9 EUR
25+2.33 EUR
100+2.13 EUR
500+1.8 EUR
1000+1.59 EUR
Mindestbestellmenge: 6 Stücke
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TSH193CX RFG TSH193_B1608.pdf
TSH193CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Supplier Device Package: SOT-23
Current - Supply (Max): 5mA
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Test Condition: 25°C
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.79 EUR
6000+0.76 EUR
9000+0.75 EUR
15000+0.73 EUR
Mindestbestellmenge: 3000 Stücke
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TSH193CX RFG TSH193_B1608.pdf
TSH193CX RFG
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH SOT23
Part Status: Active
Test Condition: 25°C
Supplier Device Package: SOT-23
Current - Output (Max): 13mA
Sensing Range: 2.5mT Trip, 2.5mT Release
Technology: Hall Effect
Voltage - Supply: 2.5V ~ 16V
Operating Temperature: -40°C ~ 125°C
Function: Latch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 5mA
auf Bestellung 20594 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.51 EUR
17+1.29 EUR
18+1.2 EUR
25+1.11 EUR
50+1.05 EUR
100+0.99 EUR
500+0.88 EUR
1000+0.84 EUR
Mindestbestellmenge: 14 Stücke
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BZX55B51 A0G BZX55B2V4%20SERIES_F1610.pdf
BZX55B51 A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 51V 500MW DO35
Produkt ist nicht verfügbar
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1.5SMC75A V7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A V6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
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Mindestbestellmenge: 3000 Stücke
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1.5SMC75A R6G
1.5SMC75A R6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75A M6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R7G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
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1.5SMC75A R7
1.5SMC75A R7
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75A M6
1.5SMC75A M6
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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1.5SMC75AHM6G 1.5SMC%20SERIES_R2102.pdf
1.5SMC75AHM6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 64.1VWM 103VC DO214AB
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