Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25068) > Seite 119 nach 418
| Foto | Bezeichnung | Hersteller | Beschreibung | 
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                            GBPC1510 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 1KV 15A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC1510M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 15A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC1510W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 15A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC2501 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 100V 25A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V  | 
                        
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                            GBPC2501M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 100V 25A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V  | 
                        
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                            GBPC2501W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 100V 25A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V  | 
                        
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                            GBPC2502 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 200V 25A GBPC                                                     | 
                        
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                            GBPC2502M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 200V 25A GBPC-M                                                     | 
                        
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                            GBPC2502W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 200V 25A GBPC-W                                                     | 
                        
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                            GBPC2506 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 600V 25A GBPC                                                     | 
                        
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                            GBPC2506M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 25A GBPC-M                                                     | 
                        
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                            GBPC2506W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 25A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V  | 
                        
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                            GBPC2508 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 800V 25A GBPC                                                     | 
                        
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                            GBPC2508M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 800V 25A GBPC-M                                                     | 
                        
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                            GBPC2508W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 800V 25A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V  | 
                        
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                            GBPC2510 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 1KV 25A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC2510M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 25A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC2510W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 25A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC3501W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 100V 35A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V  | 
                        
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                            GBPC3502W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 200V 35A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V  | 
                        
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                            GBPC3506 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 600V 35A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V  | 
                        
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                            GBPC3506M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 35A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V  | 
                        
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                            GBPC3506W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 35A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V  | 
                        
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                            GBPC3508 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 800V 35A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V  | 
                        
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                            GBPC3508M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 800V 35A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V  | 
                        
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                            GBPC3508W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 800V 35A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V  | 
                        
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                            GBPC3510 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 1KV 35A GBPCPackaging: Tray Package / Case: 4-Square, GBPC Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC3510M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 35A GBPC-MPackaging: Tray Package / Case: 4-Square, GBPC-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-M Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC3510W T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 35A GBPC-WPackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V  | 
                        
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                            GBPC40005 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 50V 40A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V  | 
                        
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                            GBPC40005M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 50V 40A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V  | 
                        
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                            GBPC4001 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 100V 40A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V  | 
                        
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                            GBPC4001M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 100V 40A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V  | 
                        
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                            GBPC4002 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 200V 40A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V  | 
                        
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                            GBPC4002M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 200V 40A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V  | 
                        
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                            GBPC4004 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 400V 40A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V  | 
                        
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                            GBPC4004M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 400V 40A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V  | 
                        
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                            GBPC4006 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 40A GBPC40                                                     | 
                        
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                            GBPC4006M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 40A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V  | 
                        
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                            GBPC50005 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 50V 50A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V  | 
                        
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                            GBPC50005M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 50V 50A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V  | 
                        
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                            GBPC5006 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 50A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V  | 
                        
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                            GBPC5006M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 600V 50A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
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                                 | 
                            GBPC5008 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 800V 50A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
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                                 | 
                            GBPC5008M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 800V 50A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
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                                 | 
                            GBPC5010 T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 50A GBPC40Packaging: Tray Package / Case: 4-Square, GBPC40 Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40 Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
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                                 | 
                            GBPC5010M T0G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1P 1KV 50A GBPC40-MPackaging: Tray Package / Case: 4-Square, GBPC40-M Mounting Type: QC Terminal Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC40-M Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
| GBU2504 D2 | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 400V 25A GBU                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | |
| GBU2506 D2 | Taiwan Semiconductor Corporation | 
                            
                                                         Description: BRIDGE RECT 1PHASE 800V 25A GBU                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | |
                                                              | 
                            5.0SMDJ17AHM6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 17V 27.6V DO214AB                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
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                                                              | 
                            5.0SMDJ17A M6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 17V 27.6V DO214AB                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
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                                                              | 
                            5.0SMDJ45AHM6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 45VWM 72.7VC DO214AB                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
                                                              | 
                            5.0SMDJ45A M6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 45VWM 72.7VC DO214AB                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
                                                              | 
                            5.0SMDJ58AHM6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 58VWM 93.6VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 53.5A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
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                                                              | 
                            5.0SMDJ58A M6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 58VWM 93.6VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 53.5A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
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                                                              | 
                            5.0SMDJ60AHM6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 60V 96.8V DO214AB                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
                                                              | 
                            5.0SMDJ60A M6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 60V 96.8V DO214AB                                                     | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
                                                              | 
                            5.0SMDJ70AHM6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 70VWM 113VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 44.3A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
                                                              | 
                            5.0SMDJ70A M6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 70VWM 113VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 44.3A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
                                                              | 
                            5.0SMDJ75AHM6G | Taiwan Semiconductor Corporation | 
                            
                                                         Description: TVS DIODE 75VWM 121VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 41.4A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101  | 
                        
                                                             Produkt ist nicht verfügbar                                                      | 
                        Im Einkaufswagen Stück im Wert von UAH | 
| GBPC1510 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC1510M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 15A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 15A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GBPC1510W T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| GBPC2501 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
    Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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| GBPC2501M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
    Description: BRIDGE RECT 1P 100V 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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| GBPC2501W T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
    Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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| GBPC2502 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 25A GBPC
    Description: BRIDGE RECT 1PHASE 200V 25A GBPC
Produkt ist nicht verfügbar
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| GBPC2502M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 25A GBPC-M
    Description: BRIDGE RECT 1P 200V 25A GBPC-M
Produkt ist nicht verfügbar
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| GBPC2502W T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 25A GBPC-W
    Description: BRIDGE RECT 1P 200V 25A GBPC-W
Produkt ist nicht verfügbar
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| GBPC2506 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 25A GBPC
    Description: BRIDGE RECT 1PHASE 600V 25A GBPC
Produkt ist nicht verfügbar
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| GBPC2506M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-M
    Description: BRIDGE RECT 1P 600V 25A GBPC-M
Produkt ist nicht verfügbar
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| GBPC2506W T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
    Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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| GBPC2508 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBPC
    Description: BRIDGE RECT 1PHASE 800V 25A GBPC
Produkt ist nicht verfügbar
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| GBPC2508M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-M
    Description: BRIDGE RECT 1P 800V 25A GBPC-M
Produkt ist nicht verfügbar
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| GBPC2508W T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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| GBPC2510 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC2510M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC2510W T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC3501W T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
    Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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| GBPC3502W T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
    Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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| GBPC3506 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
    Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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| GBPC3506M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
    Description: BRIDGE RECT 1P 600V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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| GBPC3506W T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
    Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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| GBPC3508 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1PHASE 800V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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| GBPC3508M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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| GBPC3508W T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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| GBPC3510 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1PHASE 1KV 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC3510M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC3510W T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC40005 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
    Description: BRIDGE RECT 1P 50V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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| GBPC40005M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
    Description: BRIDGE RECT 1P 50V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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| GBPC4001 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
    Description: BRIDGE RECT 1P 100V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC4001M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
    Description: BRIDGE RECT 1P 100V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBPC4002 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
    Description: BRIDGE RECT 1P 200V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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| GBPC4002M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
    Description: BRIDGE RECT 1P 200V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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| GBPC4004 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
    Description: BRIDGE RECT 1P 400V 40A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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| GBPC4004M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
    Description: BRIDGE RECT 1P 400V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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| GBPC4006 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 40A GBPC40
    Description: BRIDGE RECT 1P 600V 40A GBPC40
Produkt ist nicht verfügbar
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| GBPC4006M T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
    Description: BRIDGE RECT 1P 600V 40A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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| GBPC50005 T0G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
    Description: BRIDGE RECT 1P 50V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| GBPC50005M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
    Description: BRIDGE RECT 1P 50V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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| GBPC5006 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
    Description: BRIDGE RECT 1P 600V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| GBPC5006M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
    Description: BRIDGE RECT 1P 600V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| GBPC5008 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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| GBPC5008M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
    Description: BRIDGE RECT 1P 800V 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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| GBPC5010 T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 50A GBPC40
Packaging: Tray
Package / Case: 4-Square, GBPC40
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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| GBPC5010M T0G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
    Description: BRIDGE RECT 1P 1KV 50A GBPC40-M
Packaging: Tray
Package / Case: 4-Square, GBPC40-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC40-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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| GBU2504 D2 | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 25A GBU
    Description: BRIDGE RECT 1PHASE 400V 25A GBU
Produkt ist nicht verfügbar
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| GBU2506 D2 | 
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBU
    Description: BRIDGE RECT 1PHASE 800V 25A GBU
Produkt ist nicht verfügbar
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| 5.0SMDJ17AHM6G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17V 27.6V DO214AB
    Description: TVS DIODE 17V 27.6V DO214AB
Produkt ist nicht verfügbar
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| 5.0SMDJ17A M6G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17V 27.6V DO214AB
    Description: TVS DIODE 17V 27.6V DO214AB
Produkt ist nicht verfügbar
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| 5.0SMDJ45AHM6G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
    Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
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| 5.0SMDJ45A M6G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 45VWM 72.7VC DO214AB
    Description: TVS DIODE 45VWM 72.7VC DO214AB
Produkt ist nicht verfügbar
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| 5.0SMDJ58AHM6G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 53.5A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
    Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 53.5A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| 5.0SMDJ58A M6G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.5A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
    Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.5A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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| 5.0SMDJ60AHM6G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60V 96.8V DO214AB
    Description: TVS DIODE 60V 96.8V DO214AB
Produkt ist nicht verfügbar
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| 5.0SMDJ60A M6G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 60V 96.8V DO214AB
    Description: TVS DIODE 60V 96.8V DO214AB
Produkt ist nicht verfügbar
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| 5.0SMDJ70AHM6G | 
![]()  | 
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
    Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| 5.0SMDJ70A M6G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
    Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| 5.0SMDJ75AHM6G | 
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 41.4A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
    Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 41.4A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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