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SR506HB0G SR506HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SR510 B0G SR510 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SR510HB0G SR510HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Qualification: AEC-Q101
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SR515 B0G SR515 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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SR515HB0G SR515HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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SR520 B0G SR520 B0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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SR520HB0G SR520HB0G Taiwan Semiconductor Corporation SR502%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SR802 B0G SR802 B0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 20V 8A DO201AD
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SR802HB0G SR802HB0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 20V 8A DO201AD
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SR809 B0G SR809 B0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 90V 8A DO201AD
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SR809HB0G SR809HB0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 90V 8A DO201AD
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SR810 B0G SR810 B0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SR810HB0G SR810HB0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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TS13002ACT B0G TS13002ACT B0G Taiwan Semiconductor Corporation TS13002A_VerF15.pdf Description: TRANS NPN 400V 0.3A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 200mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 600 mW
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TS431ACT B0G Taiwan Semiconductor Corporation TS431_VerI2104.pdf Description: IC VREF SHUNT 36V 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS431BCT B0G Taiwan Semiconductor Corporation TS431_VerI2104.pdf Description: IC VREF SHUNT 36V 0.5% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS432ACT B0G Taiwan Semiconductor Corporation Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
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TS432BCT B0G Taiwan Semiconductor Corporation Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
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TS78L03CT B0G TS78L03CT B0G Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 3.3V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 2V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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TS79L09CT B0G TS79L09CT B0G Taiwan Semiconductor Corporation Description: IC REG LINEAR 9V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 9V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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TSB772CK B0G Taiwan Semiconductor Corporation TSB772CK_VerG1609.pdf Description: TRANS PNP 30V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
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TSM2N7000KCT B0G TSM2N7000KCT B0G Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 300MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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UF4001 B0G UF4001 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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UF4001HB0G UF4001HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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UF4002 B0G UF4002 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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UF4002HB0G UF4002HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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UF4003 B0G UF4003 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UF4003HB0G UF4003HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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UF4004 B0G UF4004 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4004HB0G UF4004HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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UF4005 B0G UF4005 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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UF4005HB0G UF4005HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Grade: Automotive
Qualification: AEC-Q101
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UF4006 B0G UF4006 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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UF4006HB0G UF4006HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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UF4007 B0G UF4007 B0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
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UF4007HB0G UF4007HB0G Taiwan Semiconductor Corporation UF4001%20SERIES_P2104.pdf Description: DIODE GEN PURP 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UG2D B0G UG2D B0G Taiwan Semiconductor Corporation Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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UG2DHB0G UG2DHB0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBPC1510 T0G GBPC1510 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC1510M T0G GBPC1510M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 15A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC1510W T0G GBPC1510W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2501 T0G GBPC2501 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GBPC2501M T0G GBPC2501M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 100V 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GBPC2501W T0G GBPC2501W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC2502 T0G GBPC2502 T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1PHASE 200V 25A GBPC
Produkt ist nicht verfügbar
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GBPC2502M T0G GBPC2502M T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-M
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GBPC2502W T0G GBPC2502W T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-W
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GBPC2506 T0G GBPC2506 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 600V 25A GBPC
Produkt ist nicht verfügbar
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GBPC2506M T0G GBPC2506M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 25A GBPC-M
Produkt ist nicht verfügbar
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GBPC2506W T0G GBPC2506W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBPC2508 T0G GBPC2508 T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1PHASE 800V 25A GBPC
Produkt ist nicht verfügbar
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GBPC2508M T0G GBPC2508M T0G Taiwan Semiconductor Corporation GBPC%2015005%20SERIES_K14.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-M
Produkt ist nicht verfügbar
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GBPC2508W T0G GBPC2508W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBPC2510 T0G GBPC2510 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2510M T0G GBPC2510M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2510W T0G GBPC2510W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3501W T0G GBPC3501W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC3502W T0G GBPC3502W T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBPC3506 T0G GBPC3506 T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBPC3506M T0G GBPC3506M T0G Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 600V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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SR506HB0G SR502%20SERIES_J2105.pdf
SR506HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR510 B0G SR502%20SERIES_J2105.pdf
SR510 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SR510HB0G SR502%20SERIES_J2105.pdf
SR510HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR515 B0G SR502%20SERIES_J2105.pdf
SR515 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
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SR515HB0G SR502%20SERIES_J2105.pdf
SR515HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR520 B0G SR502%20SERIES_J2105.pdf
SR520 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Produkt ist nicht verfügbar
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SR520HB0G SR502%20SERIES_J2105.pdf
SR520HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SR802 B0G SR802%20SERIES_I13.pdf
SR802 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
Produkt ist nicht verfügbar
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SR802HB0G SR802%20SERIES_I13.pdf
SR802HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
Produkt ist nicht verfügbar
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SR809 B0G SR802%20SERIES_I13.pdf
SR809 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 8A DO201AD
Produkt ist nicht verfügbar
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SR809HB0G SR802%20SERIES_J2105.pdf
SR809HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 8A DO201AD
Produkt ist nicht verfügbar
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SR810 B0G SR802%20SERIES_J2105.pdf
SR810 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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SR810HB0G SR802%20SERIES_J2105.pdf
SR810HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TS13002ACT B0G TS13002A_VerF15.pdf
TS13002ACT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 0.3A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 200mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Frequency - Transition: 4MHz
Supplier Device Package: TO-92
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 600 mW
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TS431ACT B0G TS431_VerI2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS431BCT B0G TS431_VerI2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 0.5% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS432ACT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
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TS432BCT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% TO92
Packaging: Box
Tolerance: ±0.5%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
Produkt ist nicht verfügbar
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TS78L03CT B0G TS78L00_M2206.pdf
TS78L03CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 3.3V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 3.3V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 49dB (120Hz)
Voltage Dropout (Max): 2V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TS79L09CT B0G
TS79L09CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 9V 100MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Min/Fixed): 9V
Control Features: Current Limit
Part Status: Obsolete
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TSB772CK B0G TSB772CK_VerG1609.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 30V 3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-126
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 10 W
Produkt ist nicht verfügbar
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TSM2N7000KCT B0G
TSM2N7000KCT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 300MA TO92
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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UF4001 B0G UF4001%20SERIES_P2104.pdf
UF4001 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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UF4001HB0G UF4001%20SERIES_P2104.pdf
UF4001HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF4002 B0G UF4001%20SERIES_P2104.pdf
UF4002 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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UF4002HB0G UF4001%20SERIES_P2104.pdf
UF4002HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF4003 B0G UF4001%20SERIES_P2104.pdf
UF4003 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UF4003HB0G UF4001%20SERIES_P2104.pdf
UF4003HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF4004 B0G UF4001%20SERIES_P2104.pdf
UF4004 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4004HB0G UF4001%20SERIES_P2104.pdf
UF4004HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF4005 B0G UF4001%20SERIES_P2104.pdf
UF4005 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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UF4005HB0G UF4001%20SERIES_P2104.pdf
UF4005HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF4006 B0G UF4001%20SERIES_P2104.pdf
UF4006 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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UF4006HB0G UF4001%20SERIES_P2104.pdf
UF4006HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UF4007 B0G UF4001%20SERIES_P2104.pdf
UF4007 B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
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UF4007HB0G UF4001%20SERIES_P2104.pdf
UF4007HB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1000
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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UG2D B0G
UG2D B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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UG2DHB0G
UG2DHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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GBPC1510 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC1510 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC1510M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC1510M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 15A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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GBPC1510W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC1510W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2501 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2501 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC2501M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2501M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC2501W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2501W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC2502 T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2502 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 25A GBPC
Produkt ist nicht verfügbar
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GBPC2502M T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2502M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 25A GBPC-M
Produkt ist nicht verfügbar
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GBPC2502W T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2502W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 25A GBPC-W
Produkt ist nicht verfügbar
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GBPC2506 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2506 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 25A GBPC
Produkt ist nicht verfügbar
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GBPC2506M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2506M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-M
Produkt ist nicht verfügbar
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GBPC2506W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2506W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBPC2508 T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2508 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 25A GBPC
Produkt ist nicht verfügbar
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GBPC2508M T0G GBPC%2015005%20SERIES_K14.pdf
GBPC2508M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-M
Produkt ist nicht verfügbar
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GBPC2508W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2508W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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GBPC2510 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2510 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 25A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2510M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2510M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC2510W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC2510W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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GBPC3501W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3501W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
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GBPC3502W T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3502W T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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GBPC3506 T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3506 T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 35A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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GBPC3506M T0G GBPC15_25_35%20SERIES_M2211.pdf
GBPC3506M T0G
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 35A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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