Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (22679) > Seite 156 nach 378
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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YBS2205G RAG | Taiwan Semiconductor Corporation | Description: BRIDGE RECT 1PHASE 600V 2.2A YBS |
Produkt ist nicht verfügbar |
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1PGSMC5359 R7G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 24V 5W DO214AB |
Produkt ist nicht verfügbar |
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1PGSMC5359 R7G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 24V 5W DO214AB |
auf Bestellung 538 Stücke: Lieferzeit 21-28 Tag (e) |
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HS3KB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 3A DO214AA |
Produkt ist nicht verfügbar |
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HS3KB R5G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 800V 3A DO214AA |
auf Bestellung 302 Stücke: Lieferzeit 21-28 Tag (e) |
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BZD27C39PW | Taiwan Semiconductor Corporation | Description: DIODE ZENER 39V 1W SOD123W |
Produkt ist nicht verfügbar |
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BZD27C39PW | Taiwan Semiconductor Corporation | Description: DIODE ZENER 39V 1W SOD123W |
auf Bestellung 2712 Stücke: Lieferzeit 21-28 Tag (e) |
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BZD27C39PWH | Taiwan Semiconductor Corporation | Description: DIODE ZENER 39V 1W SOD123W |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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BZD27C39PWH | Taiwan Semiconductor Corporation | Description: DIODE ZENER 39V 1W SOD123W |
auf Bestellung 11990 Stücke: Lieferzeit 21-28 Tag (e) |
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1SMB5932 M4G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 20V 3W DO214AA |
Produkt ist nicht verfügbar |
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SA110A R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 110V 177V DO204AC |
Produkt ist nicht verfügbar |
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SF22G A0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 2A DO204AC |
Produkt ist nicht verfügbar |
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SF22G B0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 2A DO204AC |
Produkt ist nicht verfügbar |
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SF22GHA0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 2A DO204AC |
Produkt ist nicht verfügbar |
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SF22GHB0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 2A DO204AC |
Produkt ist nicht verfügbar |
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TSF40L60C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 60V ITO220AB |
auf Bestellung 616 Stücke: Lieferzeit 21-28 Tag (e) |
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TS2940CM50 RNG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 1A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-263AB (D2PAK) Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 0.8V @ 800mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 110 mA |
auf Bestellung 30400 Stücke: Lieferzeit 21-28 Tag (e) |
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TS2940CM50 RNG | Taiwan Semiconductor Corporation |
Description: IC REG LINEAR 5V 1A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 15 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: TO-263AB (D2PAK) Voltage - Output (Min/Fixed): 5V Part Status: Active Voltage Dropout (Max): 0.8V @ 800mA Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage Current - Supply (Max): 110 mA |
auf Bestellung 31022 Stücke: Lieferzeit 21-28 Tag (e) |
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MTZJ43S R0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 42.5V 500MW DO34 |
Produkt ist nicht verfügbar |
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BZX79B36 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 36V 500MW DO35 |
Produkt ist nicht verfügbar |
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BZX79B30 A0G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 30V 500MW DO35 |
Produkt ist nicht verfügbar |
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TS19751BCS RLG | Taiwan Semiconductor Corporation | Description: IC LED DRVR OFFL 8SOP |
Produkt ist nicht verfügbar |
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TS19751BCS RLG | Taiwan Semiconductor Corporation | Description: IC LED DRVR OFFL 8SOP |
Produkt ist nicht verfügbar |
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HS1GFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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HS1GFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
auf Bestellung 24691 Stücke: Lieferzeit 21-28 Tag (e) |
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S1J M2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 1A DO214AC |
Produkt ist nicht verfügbar |
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S1GHM2G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 400V 1A DO214AC |
Produkt ist nicht verfügbar |
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P6KE9.1CA R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7.78VWM 13.4VC DO204AC |
Produkt ist nicht verfügbar |
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P6KE9.1CAHR0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 7.78VWM 13.4VC DO204AC |
Produkt ist nicht verfügbar |
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SA160A R0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
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SA160A A0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
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SA160A B0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
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SA160AHR0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
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SA160AHA0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
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SA160AHB0G | Taiwan Semiconductor Corporation | Description: TVS DIODE 160V 259V DO204AC |
Produkt ist nicht verfügbar |
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HS5A R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 5A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
Produkt ist nicht verfügbar |
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HS5A R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 5A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
auf Bestellung 751 Stücke: Lieferzeit 21-28 Tag (e) |
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HS5B R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 5A DO214AB |
Produkt ist nicht verfügbar |
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HS5B R7G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 100V 5A DO214AB |
Produkt ist nicht verfügbar |
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5.0SMDJ22A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 22V 35.5V DO214AB |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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5.0SMDJ22A M6G | Taiwan Semiconductor Corporation | Description: TVS DIODE 22V 35.5V DO214AB |
auf Bestellung 2907 Stücke: Lieferzeit 21-28 Tag (e) |
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5.0SMDJ22AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 35.5VC DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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5.0SMDJ22AHM6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 35.5VC DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TSF20L100C C0G | Taiwan Semiconductor Corporation | Description: DIODE ARRAY SCHOTT 100V ITO220AB |
auf Bestellung 1989 Stücke: Lieferzeit 21-28 Tag (e) |
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SS215LW RVG | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 2A SOD123W |
Produkt ist nicht verfügbar |
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SS215LW RVG | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 2A SOD123W |
auf Bestellung 3581 Stücke: Lieferzeit 21-28 Tag (e) |
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SS215L RVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 2A SUB SMA Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
Produkt ist nicht verfügbar |
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SS215L RVG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 2A SUB SMA Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V |
auf Bestellung 814 Stücke: Lieferzeit 21-28 Tag (e) |
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SS215LWHRVG | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 2A SOD123W |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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SS215LWHRVG | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 150V 2A SOD123W |
auf Bestellung 13750 Stücke: Lieferzeit 21-28 Tag (e) |
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TSM650N15CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
Produkt ist nicht verfügbar |
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TSM650N15CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V |
Produkt ist nicht verfügbar |
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HS1FFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
Produkt ist nicht verfügbar |
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HS1FFL | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 1A SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
auf Bestellung 8004 Stücke: Lieferzeit 21-28 Tag (e) |
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HERAF1606G C0G | Taiwan Semiconductor Corporation | Description: DIODE GEN PURP 600V 16A ITO220AC |
auf Bestellung 3175 Stücke: Lieferzeit 21-28 Tag (e) |
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SSL13 M2G | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 30V 1A DO214AC |
Produkt ist nicht verfügbar |
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P4SMA110AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 94V 152V DO214AC |
Produkt ist nicht verfügbar |
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P4SMA11AHM2G | Taiwan Semiconductor Corporation | Description: TVS DIODE 9.4V 15.6V DO214AC |
Produkt ist nicht verfügbar |
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1SMA110Z M2G | Taiwan Semiconductor Corporation | Description: DIODE ZENER 110V 1.25W DO214AC |
Produkt ist nicht verfügbar |
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1PGSMA110ZHM2G | Taiwan Semiconductor Corporation | Description: DIODE, ZENER, 110V |
Produkt ist nicht verfügbar |
YBS2205G RAG |
Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2.2A YBS
Description: BRIDGE RECT 1PHASE 600V 2.2A YBS
Produkt ist nicht verfügbar
1PGSMC5359 R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 5W DO214AB
Description: DIODE ZENER 24V 5W DO214AB
Produkt ist nicht verfügbar
1PGSMC5359 R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 5W DO214AB
Description: DIODE ZENER 24V 5W DO214AB
auf Bestellung 538 Stücke:
Lieferzeit 21-28 Tag (e)HS3KB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
Produkt ist nicht verfügbar
HS3KB R5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO214AA
Description: DIODE GEN PURP 800V 3A DO214AA
auf Bestellung 302 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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13+ | 2.05 EUR |
15+ | 1.81 EUR |
100+ | 1.39 EUR |
BZD27C39PW |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1W SOD123W
Description: DIODE ZENER 39V 1W SOD123W
Produkt ist nicht verfügbar
BZD27C39PW |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1W SOD123W
Description: DIODE ZENER 39V 1W SOD123W
auf Bestellung 2712 Stücke:
Lieferzeit 21-28 Tag (e)BZD27C39PWH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1W SOD123W
Description: DIODE ZENER 39V 1W SOD123W
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)BZD27C39PWH |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 1W SOD123W
Description: DIODE ZENER 39V 1W SOD123W
auf Bestellung 11990 Stücke:
Lieferzeit 21-28 Tag (e)1SMB5932 M4G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 3W DO214AA
Description: DIODE ZENER 20V 3W DO214AA
Produkt ist nicht verfügbar
SA110A R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 110V 177V DO204AC
Description: TVS DIODE 110V 177V DO204AC
Produkt ist nicht verfügbar
SF22G A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
SF22G B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
SF22GHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
SF22GHB0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Description: DIODE GEN PURP 100V 2A DO204AC
Produkt ist nicht verfügbar
TSF40L60C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
Description: DIODE ARRAY SCHOTT 60V ITO220AB
auf Bestellung 616 Stücke:
Lieferzeit 21-28 Tag (e)TS2940CM50 RNG |
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 1A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
Description: IC REG LINEAR 5V 1A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
auf Bestellung 30400 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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800+ | 3.41 EUR |
1600+ | 2.83 EUR |
2400+ | 2.63 EUR |
5600+ | 2.54 EUR |
TS2940CM50 RNG |
Hersteller: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 1A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
Description: IC REG LINEAR 5V 1A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 15 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: TO-263AB (D2PAK)
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Voltage Dropout (Max): 0.8V @ 800mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 110 mA
auf Bestellung 31022 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.77 EUR |
10+ | 5.17 EUR |
25+ | 4.88 EUR |
100+ | 4.16 EUR |
250+ | 3.9 EUR |
MTZJ43S R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 42.5V 500MW DO34
Description: DIODE ZENER 42.5V 500MW DO34
Produkt ist nicht verfügbar
BZX79B36 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW DO35
Description: DIODE ZENER 36V 500MW DO35
Produkt ist nicht verfügbar
BZX79B30 A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 30V 500MW DO35
Description: DIODE ZENER 30V 500MW DO35
Produkt ist nicht verfügbar
TS19751BCS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL 8SOP
Description: IC LED DRVR OFFL 8SOP
Produkt ist nicht verfügbar
TS19751BCS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: IC LED DRVR OFFL 8SOP
Description: IC LED DRVR OFFL 8SOP
Produkt ist nicht verfügbar
HS1GFL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.091 EUR |
HS1GFL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 24691 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 0.7 EUR |
54+ | 0.48 EUR |
111+ | 0.24 EUR |
500+ | 0.2 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
5000+ | 0.11 EUR |
S1J M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Description: DIODE GEN PURP 600V 1A DO214AC
Produkt ist nicht verfügbar
S1GHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
P6KE9.1CA R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
Produkt ist nicht verfügbar
P6KE9.1CAHR0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
Description: TVS DIODE 7.78VWM 13.4VC DO204AC
Produkt ist nicht verfügbar
SA160A R0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
SA160A A0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
SA160A B0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
SA160AHR0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
SA160AHA0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
SA160AHB0G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 160V 259V DO204AC
Description: TVS DIODE 160V 259V DO204AC
Produkt ist nicht verfügbar
HS5A R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
HS5A R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE GEN PURP 50V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 751 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.4 EUR |
22+ | 1.21 EUR |
100+ | 0.91 EUR |
HS5B R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A DO214AB
Description: DIODE GEN PURP 100V 5A DO214AB
Produkt ist nicht verfügbar
HS5B R7G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A DO214AB
Description: DIODE GEN PURP 100V 5A DO214AB
Produkt ist nicht verfügbar
5.0SMDJ22A M6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22V 35.5V DO214AB
Description: TVS DIODE 22V 35.5V DO214AB
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)5.0SMDJ22A M6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22V 35.5V DO214AB
Description: TVS DIODE 22V 35.5V DO214AB
auf Bestellung 2907 Stücke:
Lieferzeit 21-28 Tag (e)5.0SMDJ22AHM6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 4.27 EUR |
5.0SMDJ22AHM6G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)TSF20L100C C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 1989 Stücke:
Lieferzeit 21-28 Tag (e)SS215LW RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
Produkt ist nicht verfügbar
SS215LW RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
auf Bestellung 3581 Stücke:
Lieferzeit 21-28 Tag (e)SS215L RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar
SS215L RVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Description: DIODE SCHOTTKY 150V 2A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 814 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 1.01 EUR |
34+ | 0.78 EUR |
100+ | 0.47 EUR |
500+ | 0.43 EUR |
SS215LWHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.42 EUR |
6000+ | 0.39 EUR |
SS215LWHRVG |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 2A SOD123W
Description: DIODE SCHOTTKY 150V 2A SOD123W
auf Bestellung 13750 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.2 EUR |
26+ | 1.01 EUR |
100+ | 0.75 EUR |
500+ | 0.59 EUR |
1000+ | 0.46 EUR |
TSM650N15CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Produkt ist nicht verfügbar
TSM650N15CS RLG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Description: MOSFET N-CHANNEL 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Power Dissipation (Max): 12.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V
Produkt ist nicht verfügbar
HS1FFL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
HS1FFL |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
auf Bestellung 8004 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
33+ | 0.8 EUR |
100+ | 0.5 EUR |
500+ | 0.34 EUR |
1000+ | 0.26 EUR |
2000+ | 0.24 EUR |
5000+ | 0.22 EUR |
HERAF1606G C0G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AC
Description: DIODE GEN PURP 600V 16A ITO220AC
auf Bestellung 3175 Stücke:
Lieferzeit 21-28 Tag (e)SSL13 M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 1A DO214AC
Description: DIODE SCHOTTKY 30V 1A DO214AC
Produkt ist nicht verfügbar
P4SMA110AHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 94V 152V DO214AC
Description: TVS DIODE 94V 152V DO214AC
Produkt ist nicht verfügbar
P4SMA11AHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4V 15.6V DO214AC
Description: TVS DIODE 9.4V 15.6V DO214AC
Produkt ist nicht verfügbar
1SMA110Z M2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 110V 1.25W DO214AC
Description: DIODE ZENER 110V 1.25W DO214AC
Produkt ist nicht verfügbar
1PGSMA110ZHM2G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 110V
Description: DIODE, ZENER, 110V
Produkt ist nicht verfügbar