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HER205G B0G HER205G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
BZD27C13PW BZD27C13PW Taiwan Semiconductor Corporation Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
BZD27C13PW BZD27C13PW Taiwan Semiconductor Corporation Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
32+ 0.55 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
BZD27C13PWH BZD27C13PWH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C13PWH Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
BZD27C13PWH BZD27C13PWH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C13PWH Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
BZD27C13P RQG BZD27C13P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130P RHG BZD27C130P RHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RQG BZD27C130P RQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RTG BZD27C130P RTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P MHG BZD27C130P MHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P MQG BZD27C130P MQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RFG BZD27C130P RFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RVG BZD27C130P RVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRHG BZD27C130PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHRHG BZD27C13PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130PHM2G BZD27C130PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHMHG BZD27C130PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHM2G BZD27C13PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHMHG BZD27C13PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130PHMQG BZD27C130PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHMTG BZD27C130PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRQG BZD27C130PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRTG BZD27C130PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHMQG BZD27C13PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHRTG BZD27C13PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHRQG BZD27C13PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130PW BZD27C130PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_B1906.pdf Description: DIODE ZENER 130V 1W SOD123W
Produkt ist nicht verfügbar
BZD27C130PW BZD27C130PW Taiwan Semiconductor Corporation BZD27C11PW SERIES_B1906.pdf Description: DIODE ZENER 130V 1W SOD123W
Produkt ist nicht verfügbar
BZD27C130P M2G BZD27C130P M2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P MTG BZD27C130P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRFG BZD27C130PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHRFG BZD27C13PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
P4KE20CA R0G P4KE20CA R0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHR0G P4KE20CAHR0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CA R1G P4KE20CA R1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHR1G P4KE20CAHR1G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CA A0G P4KE20CA A0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHA0G P4KE20CAHA0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CA B0G P4KE20CA B0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHB0G P4KE20CAHB0G Taiwan Semiconductor Corporation P4KE%20SERIES_M1602.pdf Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
HS2FA M2G HS2FA M2G Taiwan Semiconductor Corporation HS2AA%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 1.5A DO214AC
Produkt ist nicht verfügbar
HER204G A0G HER204G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
HER202G R0G HER202G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
HER203G R0G HER203G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
HER204G R0G HER204G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Produkt ist nicht verfügbar
HER207G A0G HER207G A0G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HER207G R0G HER207G R0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Produkt ist nicht verfügbar
HER202G A0G HER202G A0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
HER202G B0G HER202G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
HER203G B0G HER203G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
HER204G B0G HER204G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
HER207G B0G HER207G B0G Taiwan Semiconductor Corporation HER201G%20SERIES_G2105.pdf Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
HS2MFS M3G HS2MFS M3G Taiwan Semiconductor Corporation Description: 75NS, 2A, 1000V, HIGH EFFICIENT
auf Bestellung 9396 Stücke:
Lieferzeit 10-14 Tag (e)
BZT55C10 L1G BZT55C10 L1G Taiwan Semiconductor Corporation BZT55C2V4_thru_BZT55C75.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
BZT55C10 L0G BZT55C10 L0G Taiwan Semiconductor Corporation BZT55C2V4 SERIES_I2301.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
Produkt ist nicht verfügbar
TSM120N10PQ56 RLG TSM120N10PQ56 RLG Taiwan Semiconductor Corporation Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
Produkt ist nicht verfügbar
BAS21C RFG BAS21C RFG Taiwan Semiconductor Corporation BAS21%20SERIES_D14.pdf Description: DIODE ARRAY GP 250V 200MA SOT23
Produkt ist nicht verfügbar
BZT55C2V7 L1G BZT55C2V7 L1G Taiwan Semiconductor Corporation BZT55C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
Produkt ist nicht verfügbar
HER205G B0G HER201G%20SERIES_G2105.pdf
HER205G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
BZD27C13PW
BZD27C13PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.17 EUR
Mindestbestellmenge: 3000
BZD27C13PW
BZD27C13PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
32+ 0.55 EUR
100+ 0.28 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 23
BZD27C13PWH pdf.php?pn=BZD27C13PWH
BZD27C13PWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
BZD27C13PWH pdf.php?pn=BZD27C13PWH
BZD27C13PWH
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
BZD27C13P RQG BZD27C%20SERIES_AB2103.pdf
BZD27C13P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130P RHG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RQG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RTG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P MHG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P MQG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RFG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P RVG BZD27C%20SERIES_AA1806.pdf
BZD27C130P RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHRHG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130PHM2G BZD27C%20SERIES_AA1806.pdf
BZD27C130PHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHMHG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHM2G BZD27C%20SERIES_AB2103.pdf
BZD27C13PHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHMHG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130PHMQG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRTG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHMQG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHRTG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C13PHRQG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
BZD27C130PW BZD27C11PW SERIES_B1906.pdf
BZD27C130PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 1W SOD123W
Produkt ist nicht verfügbar
BZD27C130PW BZD27C11PW SERIES_B1906.pdf
BZD27C130PW
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 130V 1W SOD123W
Produkt ist nicht verfügbar
BZD27C130P M2G BZD27C%20SERIES_AA1806.pdf
BZD27C130P M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130P MTG BZD27C%20SERIES_AA1806.pdf
BZD27C130P MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C130PHRFG BZD27C%20SERIES_AA1806.pdf
BZD27C130PHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 132.5V 1W SUB SMA
Produkt ist nicht verfügbar
BZD27C13PHRFG BZD27C%20SERIES_AB2103.pdf
BZD27C13PHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
P4KE20CA R0G P4KE%20SERIES_M1602.pdf
P4KE20CA R0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHR0G P4KE%20SERIES_M1602.pdf
P4KE20CAHR0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CA R1G P4KE%20SERIES_M1602.pdf
P4KE20CA R1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHR1G P4KE%20SERIES_M1602.pdf
P4KE20CAHR1G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CA A0G P4KE%20SERIES_M1602.pdf
P4KE20CA A0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHA0G P4KE%20SERIES_M1602.pdf
P4KE20CAHA0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CA B0G P4KE%20SERIES_M1602.pdf
P4KE20CA B0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
P4KE20CAHB0G P4KE%20SERIES_M1602.pdf
P4KE20CAHB0G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO204AL
Produkt ist nicht verfügbar
HS2FA M2G HS2AA%20SERIES_H14.pdf
HS2FA M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1.5A DO214AC
Produkt ist nicht verfügbar
HER204G A0G HER201G SERIES_G2105.pdf
HER204G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
HER202G R0G HER201G%20SERIES_G2105.pdf
HER202G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
HER203G R0G HER201G%20SERIES_G2105.pdf
HER203G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
HER204G R0G HER201G%20SERIES_G2105.pdf
HER204G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Produkt ist nicht verfügbar
HER207G A0G HER201G SERIES_G2105.pdf
HER207G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HER207G R0G HER201G%20SERIES_G2105.pdf
HER207G R0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Produkt ist nicht verfügbar
HER202G A0G HER201G%20SERIES_G2105.pdf
HER202G A0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
HER202G B0G HER201G%20SERIES_G2105.pdf
HER202G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
HER203G B0G HER201G%20SERIES_G2105.pdf
HER203G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
HER204G B0G HER201G%20SERIES_G2105.pdf
HER204G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
HER207G B0G HER201G%20SERIES_G2105.pdf
HER207G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 2A DO204AC
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
HS2MFS M3G
HS2MFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
HS2MFS M3G
HS2MFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 2A, 1000V, HIGH EFFICIENT
auf Bestellung 9396 Stücke:
Lieferzeit 10-14 Tag (e)
BZT55C10 L1G BZT55C2V4_thru_BZT55C75.pdf
BZT55C10 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
BZT55C10 L0G BZT55C2V4 SERIES_I2301.pdf
BZT55C10 L0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Produkt ist nicht verfügbar
TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
Produkt ist nicht verfügbar
TSM120N10PQ56 RLG
TSM120N10PQ56 RLG
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 58A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3902 pF @ 30 V
Produkt ist nicht verfügbar
BAS21C RFG BAS21%20SERIES_D14.pdf
BAS21C RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
Produkt ist nicht verfügbar
BZT55C2V7 L1G BZT55C2V4%20SERIES_G1804.pdf
BZT55C2V7 L1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
Produkt ist nicht verfügbar
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