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BZD27C91PHRHG BZD27C91PHRHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHRTG BZD27C91PHRTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHRQG BZD27C91PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C9V1PHRQG BZD27C9V1PHRQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 9.05V 1W SUB SMA
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BZD27C91PHMHG BZD27C91PHMHG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHMQG BZD27C91PHMQG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHRFG BZD27C91PHRFG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHRVG BZD27C91PHRVG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91P M2G BZD27C91P M2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91P MTG BZD27C91P MTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91P R3G BZD27C91P R3G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91P RUG BZD27C91P RUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHM2G BZD27C91PHM2G Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHMTG BZD27C91PHMTG Taiwan Semiconductor Corporation BZD27C%20SERIES_AA1806.pdf Description: DIODE ZENER 90.5V 1W SUB SMA
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ES1FL R3G ES1FL R3G Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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ES3HB R5G ES3HB R5G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 500V 3A DO214AA
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ES3HB R5G ES3HB R5G Taiwan Semiconductor Corporation ES3AB%20SERIES_B1706.pdf Description: DIODE GEN PURP 500V 3A DO214AA
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BZT52C22-G RHG BZT52C22-G RHG Taiwan Semiconductor Corporation BZT52C2V4-G%20series_B1601.pdf Description: DIODE ZENER 22V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
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BZT52C22 RHG BZT52C22 RHG Taiwan Semiconductor Corporation BZT52C2V4%20SERIES_G1804.pdf Description: DIODE ZENER 22V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
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BZT52C22S RRG BZT52C22S RRG Taiwan Semiconductor Corporation pdf.php?pn=BZT52C22S Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
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BZT52C22K RKG BZT52C22K RKG Taiwan Semiconductor Corporation BZT52C2V7K%20SERIES_F1806.pdf Description: DIODE ZENER 22V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
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HS1GLW RVG HS1GLW RVG Taiwan Semiconductor Corporation HS1DLW SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 9000 Stücke:
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3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
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HS1GLW RVG HS1GLW RVG Taiwan Semiconductor Corporation HS1DLW SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 11040 Stücke:
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22+0.83 EUR
28+0.63 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.32 EUR
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HS1G R3G HS1G R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
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HS1G R3G HS1G R3G Taiwan Semiconductor Corporation HS1A%20SERIES_L2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
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HS1GFS M3G HS1GFS M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
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HS1GFS M3G HS1GFS M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
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HS1GAL M3G HS1GAL M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
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HS1GAL M3G HS1GAL M3G Taiwan Semiconductor Corporation Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
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TSUP5M60SH S1G TSUP5M60SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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TSUP5M45SH S1G TSUP5M45SH S1G Taiwan Semiconductor Corporation TSUP5M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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TSUP5M45SH S1G TSUP5M45SH S1G Taiwan Semiconductor Corporation TSUP5M45SH_B2103.pdf Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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TSUP10M60SH S1G TSUP10M60SH S1G Taiwan Semiconductor Corporation TSUP10M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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TSUP10M60SH S1G TSUP10M60SH S1G Taiwan Semiconductor Corporation TSUP10M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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TSUP15M45SH S1G TSUP15M45SH S1G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
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TSUP15M60SH S1G TSUP15M60SH S1G Taiwan Semiconductor Corporation TSUP15M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP15M60SH S1G TSUP15M60SH S1G Taiwan Semiconductor Corporation TSUP15M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.22 EUR
10+2.88 EUR
100+2.07 EUR
500+1.71 EUR
Mindestbestellmenge: 5
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HS1GL RQG HS1GL RQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL R3G HS1GL R3G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RHG HS1GL RHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL M2G HS1GL M2G Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL MHG HS1GL MHG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL MQG HS1GL MQG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL MTG HS1GL MTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RTG HS1GL RTG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TSF40U100C C0G TSF40U100C C0G Taiwan Semiconductor Corporation TSF40U100C_B2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 565 Stücke:
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RS1MAL M3G RS1MAL M3G Taiwan Semiconductor Corporation Description: 500NS, 1A, 1000V, FAST RECOVERY
auf Bestellung 3500 Stücke:
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RS1MAL M3G RS1MAL M3G Taiwan Semiconductor Corporation Description: 500NS, 1A, 1000V, FAST RECOVERY
auf Bestellung 3816 Stücke:
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1.5SMC20A V6G 1.5SMC20A V6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20A V7G 1.5SMC20A V7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20A R7G 1.5SMC20A R7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20AHR7G 1.5SMC20AHR7G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
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1.5SMC20A M6G 1.5SMC20A M6G Taiwan Semiconductor Corporation 1.5SMC SERIES_Q2004.pdf Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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TSH282CT B0G TSH282CT B0G Taiwan Semiconductor Corporation TSH282_B13.pdf Description: MAGNETIC SWITCH TO92S
auf Bestellung 4687 Stücke:
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TSH181CT B0G TSH181CT B0G Taiwan Semiconductor Corporation TSH181_B13.pdf Description: MAGNETIC SWITCH TO92S
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±9mT Trip, ±0.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 4mA
Supplier Device Package: TO-92
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 9471 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.19 EUR
10+4.24 EUR
25+3.44 EUR
50+3.2 EUR
100+3.04 EUR
500+2.56 EUR
1000+2.4 EUR
5000+2.24 EUR
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TSH251CT B0G TSH251CT B0G Taiwan Semiconductor Corporation TSH251_B14.pdf Description: HALL EFFECT SWITCH, OMNI-POLAR,
auf Bestellung 9944 Stücke:
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TSH188CT B0G TSH188CT B0G Taiwan Semiconductor Corporation TSH188_C13.pdf Description: HALL EFFECT SWITCH, LATCH, 2.5 -
auf Bestellung 9948 Stücke:
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TSH481CT B0G TSH481CT B0G Taiwan Semiconductor Corporation TSH481_A14.pdf Description: HALL EFFECT SENSOR, LINEAR, 3 -
auf Bestellung 9747 Stücke:
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BAT54 RFG BAT54 RFG Taiwan Semiconductor Corporation BAT54 SERIES_G2007.pdf Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.041 EUR
6000+0.038 EUR
9000+0.033 EUR
Mindestbestellmenge: 3000
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AZ23C27 RFG AZ23C27 RFG Taiwan Semiconductor Corporation AZ23C2V7%20SERIES_C14.pdf Description: DIODE ZENER ARRAY 27V SOT23
Produkt ist nicht verfügbar
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BZD27C91PHRHG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHRHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91PHRTG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHRTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C9V1PHRQG BZD27C%20SERIES_AA1806.pdf
BZD27C9V1PHRQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 9.05V 1W SUB SMA
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BZD27C91PHMHG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHMHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91PHMQG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHMQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91PHRFG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHRFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHRVG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHRVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91P M2G BZD27C%20SERIES_AA1806.pdf
BZD27C91P M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91P MTG BZD27C%20SERIES_AA1806.pdf
BZD27C91P MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91P R3G BZD27C%20SERIES_AA1806.pdf
BZD27C91P R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91P RUG BZD27C%20SERIES_AA1806.pdf
BZD27C91P RUG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
Produkt ist nicht verfügbar
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BZD27C91PHM2G BZD27C%20SERIES_AA1806.pdf
BZD27C91PHM2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
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BZD27C91PHMTG BZD27C%20SERIES_AA1806.pdf
BZD27C91PHMTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 90.5V 1W SUB SMA
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ES1FL R3G ES1AL%20SERIES_L2103.pdf
ES1FL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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ES3HB R5G ES3AB%20SERIES_B1706.pdf
ES3HB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 3A DO214AA
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
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ES3HB R5G ES3AB%20SERIES_B1706.pdf
ES3HB R5G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 3A DO214AA
auf Bestellung 4035 Stücke:
Lieferzeit 10-14 Tag (e)
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BZT52C22-G RHG BZT52C2V4-G%20series_B1601.pdf
BZT52C22-G RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 350MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15.4 V
Produkt ist nicht verfügbar
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BZT52C22 RHG BZT52C2V4%20SERIES_G1804.pdf
BZT52C22 RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW SOD123F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
Produkt ist nicht verfügbar
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BZT52C22S RRG pdf.php?pn=BZT52C22S
BZT52C22S RRG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 15.4 V
Produkt ist nicht verfügbar
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BZT52C22K RKG BZT52C2V7K%20SERIES_F1806.pdf
BZT52C22K RKG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW SOD523F
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-523F
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
Produkt ist nicht verfügbar
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HS1GLW RVG HS1DLW SERIES_C2103.pdf
HS1GLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000
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HS1GLW RVG HS1DLW SERIES_C2103.pdf
HS1GLW RVG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 11040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
28+0.63 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 22
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HS1G R3G HS1A%20SERIES_L2102.pdf
HS1G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
Produkt ist nicht verfügbar
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HS1G R3G HS1A%20SERIES_L2102.pdf
HS1G R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
auf Bestellung 1789 Stücke:
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HS1GFS M3G
HS1GFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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HS1GFS M3G
HS1GFS M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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HS1GAL M3G
HS1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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HS1GAL M3G
HS1GAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 400V, HIGH EFFICIENT R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
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TSUP5M60SH S1G
TSUP5M60SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 346pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP5M45SH S1G TSUP5M45SH_B2103.pdf
TSUP5M45SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP5M45SH S1G TSUP5M45SH_B2103.pdf
TSUP5M45SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 5A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 589pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP10M60SH S1G TSUP10M60SH_B2103.pdf
TSUP10M60SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP10M60SH S1G TSUP10M60SH_B2103.pdf
TSUP10M60SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP15M45SH S1G
TSUP15M45SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1803pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP15M60SH S1G TSUP15M60SH_B2103.pdf
TSUP15M60SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TSUP15M60SH S1G TSUP15M60SH_B2103.pdf
TSUP15M60SH S1G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1046pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 450 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.88 EUR
100+2.07 EUR
500+1.71 EUR
Mindestbestellmenge: 5
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HS1GL RQG HS1AL%20SERIES_C2103.pdf
HS1GL RQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL R3G HS1AL%20SERIES_C2103.pdf
HS1GL R3G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RHG HS1AL%20SERIES_C2103.pdf
HS1GL RHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL M2G HS1AL%20SERIES_C2103.pdf
HS1GL M2G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL MHG HS1AL%20SERIES_C2103.pdf
HS1GL MHG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL MQG HS1AL%20SERIES_C2103.pdf
HS1GL MQG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL MTG HS1AL%20SERIES_C2103.pdf
HS1GL MTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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HS1GL RTG HS1AL%20SERIES_C2103.pdf
HS1GL RTG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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TSF40U100C C0G TSF40U100C_B2105.pdf
TSF40U100C C0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
auf Bestellung 565 Stücke:
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RS1MAL M3G
RS1MAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
auf Bestellung 3500 Stücke:
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RS1MAL M3G
RS1MAL M3G
Hersteller: Taiwan Semiconductor Corporation
Description: 500NS, 1A, 1000V, FAST RECOVERY
auf Bestellung 3816 Stücke:
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1.5SMC20A V6G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A V6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20A V7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A V7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20A R7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A R7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20AHR7G 1.5SMC SERIES_Q2004.pdf
1.5SMC20AHR7G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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1.5SMC20A M6G 1.5SMC SERIES_Q2004.pdf
1.5SMC20A M6G
Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 17.1V 27.7V DO214AB
Produkt ist nicht verfügbar
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TSH282CT B0G TSH282_B13.pdf
TSH282CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
auf Bestellung 4687 Stücke:
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TSH181CT B0G TSH181_B13.pdf
TSH181CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: MAGNETIC SWITCH TO92S
Packaging: Bulk
Features: Temperature Compensated
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Open Collector
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.5V ~ 20V
Technology: Hall Effect
Sensing Range: ±9mT Trip, ±0.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 4mA
Supplier Device Package: TO-92
Test Condition: -40°C ~ 125°C
Part Status: Active
auf Bestellung 9471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.19 EUR
10+4.24 EUR
25+3.44 EUR
50+3.2 EUR
100+3.04 EUR
500+2.56 EUR
1000+2.4 EUR
5000+2.24 EUR
Mindestbestellmenge: 4
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TSH251CT B0G TSH251_B14.pdf
TSH251CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, OMNI-POLAR,
auf Bestellung 9944 Stücke:
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TSH188CT B0G TSH188_C13.pdf
TSH188CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SWITCH, LATCH, 2.5 -
auf Bestellung 9948 Stücke:
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TSH481CT B0G TSH481_A14.pdf
TSH481CT B0G
Hersteller: Taiwan Semiconductor Corporation
Description: HALL EFFECT SENSOR, LINEAR, 3 -
auf Bestellung 9747 Stücke:
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BAT54 RFG BAT54 SERIES_G2007.pdf
BAT54 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.041 EUR
6000+0.038 EUR
9000+0.033 EUR
Mindestbestellmenge: 3000
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AZ23C27 RFG AZ23C2V7%20SERIES_C14.pdf
AZ23C27 RFG
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 27V SOT23
Produkt ist nicht verfügbar
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