Produkte > TAIWAN SEMICONDUCTOR CORPORATION > Alle Produkte des Herstellers TAIWAN SEMICONDUCTOR CORPORATION (25511) > Seite 167 nach 426
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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1PGSMA4752 M2G | Taiwan Semiconductor Corporation |
Description: DIODE, ZENER, 33V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SRAS2020 MNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 20A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SRAS2020HMNG | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 20A TO263AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM3911DCX6 RFG | Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 20V 2.2A SOT26 Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM3911DCX6 RFG | Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 20V 2.2A SOT26 Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.15W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 47404 Stücke: Lieferzeit 10-14 Tag (e) |
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LL4007G L0G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 1000V 1A MELFCurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: MELF Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZT55B3V9 L1G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 3.9V 500MW MINI MELF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TS13005CK B0G | Taiwan Semiconductor Corporation |
Description: TRANS NPN 400V 3A TO126Power - Max: 20 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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1PGSMA200Z R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 200V 1.25W DO214ACCurrent - Reverse Leakage @ Vr: 1 µA @ 152 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.25 W Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 1500 Ohms Voltage - Zener (Nom) (Vz): 200 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1PGSMA200Z R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 200V 1.25W DO214ACCurrent - Reverse Leakage @ Vr: 1 µA @ 152 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1.25 W Supplier Device Package: DO-214AC (SMA) Impedance (Max) (Zzt): 1500 Ohms Voltage - Zener (Nom) (Vz): 200 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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1PGSMA4763 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1PGSMA4763 R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER |
auf Bestellung 1790 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBRF10H200CT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTT 200V ITO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S4D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 4A DO214AB |
auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 850 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S4D R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 4A DO214AB |
auf Bestellung 3343 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMCJ28CA V7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28VWM 45.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 34A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMCJ28CA R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28V 45.4V DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMCJ28CA R7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28V 45.4V DO214AB |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
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SMCJ28CA V6G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28V 45.4V DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMCJ28CAHR7G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28V 45.4V DO214AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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YBS3004G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 3A YBSCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 400 V Part Status: Active Supplier Device Package: YBS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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YBS3004G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 400V 3A YBSPart Status: Active Supplier Device Package: YBS Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Average Rectified (Io): 3 A Voltage - Peak Reverse (Max): 400 V |
auf Bestellung 2961 Stücke: Lieferzeit 10-14 Tag (e) |
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ES2HA R3G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 500V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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ES2HA R3G | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 500V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 500 V |
auf Bestellung 35 Stücke: Lieferzeit 10-14 Tag (e) |
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SR16100 C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SR16100HC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SR16100PT C0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SR16100PTHC0G | Taiwan Semiconductor Corporation |
Description: DIODE ARRAY SCHOTTKY 100V TO247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SK26A M2G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 2A DO214AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1KSMB33A M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 28.2VWM 45.7V DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.9A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZW06-13 A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 12.8V 27.2V DO204AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMA6J22AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 34.5VC DO214ACQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 34.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 17.4A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMA6J22AHR3G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 22VWM 34.5VC DO214ACQualification: AEC-Q101 Grade: Automotive Power Line Protection: No Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 34.5V Voltage - Breakdown (Min): 24.4V Unidirectional Channels: 1 Supplier Device Package: DO-214AC (SMA) Voltage - Reverse Standoff (Typ): 22V Current - Peak Pulse (10/1000µs): 17.4A Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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SMBJ30CAHR5G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 30VWM 48.4VC DO214AA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ33CA M4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AAPart Status: Discontinued at Digi-Key Power Line Protection: No Power - Peak Pulse: 600W Voltage - Clamping (Max) @ Ipp: 53.3V Voltage - Breakdown (Min): 36.7V Bidirectional Channels: 1 Supplier Device Package: DO-214AA (SMB) Voltage - Reverse Standoff (Typ): 33V Current - Peak Pulse (10/1000µs): 11.8A Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SMBJ33CAHM4G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33VWM 53.3VC DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| KBP202G C2 | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| KBP202G C2G | Taiwan Semiconductor Corporation |
Description: BRIDGE RECT 1PHASE 100V 2A KBPPackaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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1SMB5927 M4G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1SMB5927 R5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AACurrent - Reverse Leakage @ Vr: 1 µA @ 9.1 V Power - Max: 3 W Supplier Device Package: DO-214AA (SMB) Impedance (Max) (Zzt): 6.5 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1SMB5927HM4G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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1SMB5927HR5G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 3W DO214AA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V Power - Max: 3 W Grade: Automotive Supplier Device Package: DO-214AA (SMB) Package / Case: DO-214AA, SMB Tolerance: ±5% Packaging: Tape & Reel (TR) Impedance (Max) (Zzt): 6.5 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| TSM3404CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 30V 5.8A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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BZD17C13P RQG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 800MW SUB SMA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZD17C13P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 800MW SUB SMA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZD27C13PHRVG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMAOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZD27C13P R3G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMACurrent - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZD27C13P RUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMACurrent - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZD27C13PHMTG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMACurrent - Reverse Leakage @ Vr: 2 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Part Status: Active Supplier Device Package: Sub SMA Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 13.25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Tolerance: ±6.41% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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BZD27C13PHRUG | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13.25V 1W SUB SMATolerance: ±6.41% Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 13.25 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: Sub SMA Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S5KBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 5A DO214AA |
auf Bestellung 1700 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 850 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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S5KBHR5G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 5A DO214AA |
auf Bestellung 2141 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A 8PDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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TSM033NB04CR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 40V 21A/121A 8PDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V |
auf Bestellung 1122 Stücke: Lieferzeit 10-14 Tag (e) |
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| S1MFL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123FL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| S1MFL RVG | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 1A SOD123FL |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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RS2DFS M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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RS2DFS M3G | Taiwan Semiconductor Corporation | Description: 150NS, 2A, 200V, FAST RECOVERY R |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR760 C0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220ACCurrent - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 7.5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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MBR760HC0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 7.5A TO220ACQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 7.5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1PGSMA4752 M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE, ZENER, 33V
Description: DIODE, ZENER, 33V
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SRAS2020 MNG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 20A TO263AB
Description: DIODE SCHOTTKY 20V 20A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SRAS2020HMNG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 20A TO263AB
Description: DIODE SCHOTTKY 20V 20A TO263AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TSM3911DCX6 RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 2.2A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.4 EUR |
| TSM3911DCX6 RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 20V 2.2A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 20V 2.2A SOT26
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 47404 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.21 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.52 EUR |
| LL4007G L0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A MELF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 1000V 1A MELF
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: MELF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BZT55B3V9 L1G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW MINI MELF
Description: DIODE ZENER 3.9V 500MW MINI MELF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TS13005CK B0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TRANS NPN 400V 3A TO126
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS NPN 400V 3A TO126
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 425mA, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1PGSMA200Z R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 200V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1PGSMA200Z R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 200V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 200V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.49 EUR |
| 1PGSMA4763 R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER
Description: DIODE ZENER
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
| 1PGSMA4763 R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER
Description: DIODE ZENER
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
| MBRF10H200CT C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S4D R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Description: DIODE GEN PURP 200V 4A DO214AB
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
| S4D R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 4A DO214AB
Description: DIODE GEN PURP 200V 4A DO214AB
auf Bestellung 3343 Stücke:
Lieferzeit 10-14 Tag (e)
| SMCJ28CA V7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 28VWM 45.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ28CA R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ28CA R7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 14+ | 1.57 EUR |
| 100+ | 1.21 EUR |
| SMCJ28CA V6G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ28CAHR7G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28V 45.4V DO214AB
Description: TVS DIODE 28V 45.4V DO214AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| YBS3004G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: YBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: YBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| YBS3004G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Part Status: Active
Supplier Device Package: YBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
Description: BRIDGE RECT 1PHASE 400V 3A YBS
Part Status: Active
Supplier Device Package: YBS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 400 V
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.46 EUR |
| 24+ | 0.9 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| ES2HA R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES2HA R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Description: DIODE STANDARD 500V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 16+ | 1.39 EUR |
| SR16100 C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SR16100HC0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
Description: DIODE ARRAY SCHOTTKY 100V TO220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SR16100PT C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Description: DIODE ARRAY SCHOTTKY 100V TO247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SR16100PTHC0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO247
Description: DIODE ARRAY SCHOTTKY 100V TO247
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| SK26A M2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 2A DO214AC
Description: DIODE SCHOTTKY 60V 2A DO214AC
Produkt ist nicht verfügbar
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| 1KSMB33A M4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.9A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
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| BZW06-13 A0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 12.8V 27.2V DO204AC
Description: TVS DIODE 12.8V 27.2V DO204AC
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| SMA6J22AHR3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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| SMA6J22AHR3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Description: TVS DIODE 22VWM 34.5VC DO214AC
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 34.5V
Voltage - Breakdown (Min): 24.4V
Unidirectional Channels: 1
Supplier Device Package: DO-214AC (SMA)
Voltage - Reverse Standoff (Typ): 22V
Current - Peak Pulse (10/1000µs): 17.4A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.19 EUR |
| 21+ | 1.04 EUR |
| SMBJ30CAHR5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO214AA
Description: TVS DIODE 30VWM 48.4VC DO214AA
Produkt ist nicht verfügbar
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| SMBJ33CA M4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: TVS DIODE 33VWM 53.3VC DO214AA
Part Status: Discontinued at Digi-Key
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 53.3V
Voltage - Breakdown (Min): 36.7V
Bidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 33V
Current - Peak Pulse (10/1000µs): 11.8A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| SMBJ33CAHM4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 53.3VC DO214AA
Description: TVS DIODE 33VWM 53.3VC DO214AA
Produkt ist nicht verfügbar
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| KBP202G C2 |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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| KBP202G C2G |
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Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 2A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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| 1SMB5927 M4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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| 1SMB5927 R5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 12V 3W DO214AA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Supplier Device Package: DO-214AA (SMB)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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| 1SMB5927HM4G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Description: DIODE ZENER 12V 3W DO214AA
Produkt ist nicht verfügbar
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| 1SMB5927HR5G |
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: DIODE ZENER 12V 3W DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Power - Max: 3 W
Grade: Automotive
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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| TSM3404CX RFG |
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400.96 pF @ 15 V
Produkt ist nicht verfügbar
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| BZD17C13P RQG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
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| BZD17C13P R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 800MW SUB SMA
Description: DIODE ZENER 13V 800MW SUB SMA
Produkt ist nicht verfügbar
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| BZD27C13PHRVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Produkt ist nicht verfügbar
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| BZD27C13P R3G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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| BZD27C13P RUG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3600 Stücke
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| BZD27C13PHMTG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 13.25V 1W SUB SMA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Part Status: Active
Supplier Device Package: Sub SMA
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 13.25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| BZD27C13PHRUG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Description: DIODE ZENER 13.25V 1W SUB SMA
Tolerance: ±6.41%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 13.25 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: Sub SMA
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 10 V
Produkt ist nicht verfügbar
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| S5KBHR5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
Description: DIODE GEN PURP 800V 5A DO214AA
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
| S5KBHR5G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 5A DO214AA
Description: DIODE GEN PURP 800V 5A DO214AA
auf Bestellung 2141 Stücke:
Lieferzeit 10-14 Tag (e)
| TSM033NB04CR RLG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
Produkt ist nicht verfügbar
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| TSM033NB04CR RLG |
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Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
Description: MOSFET N-CH 40V 21A/121A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5022 pF @ 20 V
auf Bestellung 1122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.58 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.15 EUR |
| S1MFL RVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123FL
Description: DIODE GEN PURP 1KV 1A SOD123FL
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S1MFL RVG |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SOD123FL
Description: DIODE GEN PURP 1KV 1A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RS2DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| RS2DFS M3G |
Hersteller: Taiwan Semiconductor Corporation
Description: 150NS, 2A, 200V, FAST RECOVERY R
Description: 150NS, 2A, 200V, FAST RECOVERY R
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| MBR760 C0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR760HC0G |
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Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


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